JPH0697084A - Beam induction process apparatus - Google Patents

Abstract

PURPOSE:To implement a sufficient process speed regardless of a relative position relation of a gas pressure distribution to a beam scanning range by specifying an angle to a processed sample surface of an opening surface of a nozzle for beam induction process for introducing a reactant gas into a processed surface. CONSTITUTION:In a focused ion beam deposition method or a focused ion beam induction etching method, an angle to a processed sample surface 5 of an opening surface of a nozzle 1 for beam induction process for introducing a reactant gas into the processed surface 5 is set to 60 to 80 degrees. In the angle range, a gas pressure distribution 2 on the sample has a good uniformity and a large pressure value can be obtained in the range of beam irradiation without increasing a gas flow as compared with the case of an angle setting other than above angle. Also, since the uniformity of the distribution is excellent, the change in distribution to the slight deviation from a nozzle angle or a set point of distance is small and the margin to a set error can be increased.

Description

Detailed Description of the Invention

[0001]

The present invention relates to the development of a large scale integrated circuit,
The present invention relates to manufacturing, defect analysis, and circuit correction, and more particularly, to a focused ion beam processing process used for inspection wiring formation, through hole formation, etc. when developing a super-large integrated circuit and correcting on a wafer. Further, the present invention relates to a processing process for forming an ultrafine pattern used in quantum devices and the like.

[0002]

In Japanese Patent Publication No. 63-45815, the distribution of gas pressure on a processed sample is made uniform by changing the shape of the tip of a focused ion beam deposition nozzle, and the deposition range in the focused ion beam induced deposition method is improved. Discussing expanding the. Further, Japanese Patent Laid-Open No. 3-289133 describes that the beam scanning conditions are changed with respect to the beam intensity and the ion species to obtain a constant process speed. However, regarding the distribution of the gas pressure on the processed sample, I haven't touched it.

Also, Journal of Vacuum Science and Technology B7 (1989), pages 609 to 617 (J. Vac. Sci. Technol. B7).
(1989) pp609-617) shows the dependence of the gas pressure on the substrate on the nozzle height.
The two-dimensional gas pressure distribution on the sample has not been measured, and its application to a beam induced process device has not been discussed.

[0004]

In the above-mentioned prior art, it was attempted to realize uniform gas pressure distribution by using a nozzle having dot-shaped openings arranged in a line or a nozzle having a linear opening. . However, if a large number of openings are provided while realizing a wide pressure distribution in each opening, the total area of the openings becomes large, and the amount of gas flowing out of the nozzle per unit time increases. There was a problem. The same applies to a nozzle having a linear opening (problem 1). In general, when trying to obtain a high gas pressure in a wide range on a processed sample, the gas flow rate must be increased, which results in unnecessary loss of reaction gas, contamination of the processing chamber, and damage to high-voltage equipment due to reduced vacuum. It is easy to cause

However, conversely, when a nozzle having a small opening area is used and gas is flowed at the same flow rate, the pressure distribution obtained in the vicinity of the nozzle opening surface becomes small, and the angle, height, and horizontal distance of the nozzle with respect to the work range are reduced. If the alignment is not made correctly, the desired gas pressure cannot be obtained in the beam irradiation area. However, in the conventional nozzles,
It is possible to judge the angle of the aperture surface with an optical microscope or from the secondary electron image generated from the irradiation of ions or electron beams.
It was difficult (Problem 2).

Further, in the above prior art, the two-dimensional gas pressure distribution on the processed sample in the vicinity of the gas nozzle is not taken into consideration, and even if the total gas flow rate is controlled, the gas pressure on the sample is not uniform. It was not possible to obtain constant process conditions. Therefore, it has been difficult to make the film quality and film thickness constant in the beam-induced deposition and the etching rate and etching shape constant in the processed region in the beam-induced etching. Furthermore, when these processing processes are performed over a wide range, or when the process is performed at a large number of points in the beam irradiation area, the process speed becomes extremely slow in a portion where the pressure is low and far from the nozzle, or the process is not complete. There was a problem that it would be possible (Problem 3).

Furthermore, in a beam induced process apparatus such as an electron beam or an ion beam, an image of a region to be processed is enlarged and displayed on a display by detecting secondary electrons. In some cases, sufficient gas pressure could not be obtained. That is, since the beam scanning region and the gas pressure distribution in the vicinity of the nozzle do not normally match, when the magnification is small and the beam scanning range is large, only the part of the beam scanning range, that is, the display range near the nozzle is processed. There was a problem that I could not do it (Problem 4).

[0008]

A method for solving the problem 1 in the above problems will be described. This can be solved by optimizing the set angle of the nozzle opening with respect to the processed sample and widening the gas pressure distribution. FIG. 2 shows the gas pressure distribution on the sample surface when a cylindrical nozzle is used.
Generally, if the angle between the nozzle opening surface and the processed sample surface becomes an acute angle, the gas incidence will be nearly perpendicular to the processed sample,
The gas pressure at the peak position on the processed sample is correspondingly higher. However, at the same time, the gas pressure distribution itself narrows, and most of the distribution is hidden behind the gas nozzle that cannot irradiate the beam when the beam is incident from the direction perpendicular to the processed sample. That is, from the viewpoint of expanding the processable area, it is better that the angle setting of the nozzle opening surface with respect to the sample surface is rather an obtuse angle. However, when the angle is increased, the distribution of gas pressure increases, but the angle of incidence on the sample (angle with respect to the direction normal to the sample surface) increases, so the pressure (flux of gas) decreases. Considering these two contradictory conditions, it is practical that the angle of the nozzle opening surface with respect to the processed sample surface is set to 60 degrees or more and 80 degrees or less. In this angle range, the gas pressure distribution on the sample has good uniformity, and a large gas pressure value can be obtained in the beam irradiation region even if the gas flow rate is not increased, as compared with the case of other angle settings. In addition, since the uniformity of the distribution is good, the change in the distribution is small with respect to a minute deviation from the set values of the nozzle angle and the distance, and the margin for the setting error can be increased.

When the incident angle of the beam is not perpendicular to the processed sample, and when the nozzle setting angle and the beam incident direction are relatively variable, the nozzle angle is set according to the distribution shown in FIG. The vicinity of the peak position of the pressure distribution may be used. In this case, since a region having a large gas pressure can be used, the required gas flow rate can be further reduced. The angle setting of this gas nozzle is also effective when different kinds of gas are supplied to the same region from a large number of nozzles, or when the same kind of gas is supplied simultaneously from a large number of nozzles to form a gas pressure distribution in a wide range. .

The improvement of the positioning accuracy of the nozzle with respect to the processed sample (problem 2) can be achieved by clearly indicating the direction and position of the nozzle opening surface even when the nozzle shape is magnified and observed. Specifically, the angle can be set by changing the shape of the nozzle so as to clearly show the relative position of two points apart from each other on the nozzle.

In order to make the process uniform in the processed region (problem 3), considering the pressure distribution in the vicinity of the nozzle, the conditions such as the beam scanning speed and the current density within the range where the film is to be formed. Can be solved by changing the process conditions so that the process conditions at each point are effectively the same. In the beam-induced process, the beam is generally scanned over the processed sample and the process is performed on the desired part. However, when looking at a part within the scanning range, the gas adsorption amount decreases during the beam irradiation time and during the non-irradiation time. It behaves as it increases. However, if the scanning speed is increased, the reaction can occur without significantly reducing the amount of the processed sample adsorption gas. As described above, even if the gas pressure is not uniform on the processed sample, the process can be uniformly carried out by changing the beam irradiation conditions. Specifically, the following is done. The electron beam and the ion beam are usually digitally scanned, but this can change the beam stop time at each point within the scanning range.
That is, the scanning speed at each point is set to a value corresponding to the gas pressure at that point from the relationship obtained beforehand with respect to the desired process speed (an example in the focused ion beam deposition method is shown in FIG. 2). Just do it.

Not only the scanning speed but also the beam intensity has a similar effect. By lowering the beam intensity, the process can proceed without lowering the adsorption density of gas molecules, but the beam diameter does not change. It is difficult to change the intensity with an ordinary focusing optical system, and it is easier to realize the change in scanning conditions with the beam intensity kept constant, especially when performing fine processing. If the physical properties of the film (resistance value, adhesion strength, etc.) during deposition and the etching shape (unevenness, selectivity, etc.) during etching change depending on the effective density of the adsorbed gas, the scanning speed and beam intensity should be adjusted in the same manner as above. These can be controlled by changing them according to the gas pressure distribution.

Problem 4 can be solved as follows. That is, the pressure distribution on the processed sample may be displayed as processing information, and the process may be performed according to the information. FIG. 3 shows this as an isobar. Now, given the scanning velocity and intensity of the beam, it is possible for some regions indicated by the isobars corresponding to the lower limit of the required process velocity, and impossible for other regions. become. Such an indication is valid because the required process speed is usually given above some lower limit. Since the display can be changed according to the change of the display magnification of the processing area, the display can always be set to indicate the processable area. Even if the film formation range is not wide, or even if the relative position to the nozzle is not far, it is better to know the pressure on the processed sample to obtain the desired process speed at the desired position. It is desirable to display it as a distribution. This is possible if the relationship between gas pressure and process speed is obtained in advance. As an example, the relationship between gas pressure and film deposition rate in focused ion beam induced deposition is shown in FIG.

The gas pressure distribution can be experimentally obtained by forming a small hole on the sample table and connecting a pressure gauge to this, but for the sake of simplicity, an approximate value can be obtained by the following calculation. That is, assuming that the scattering angle distribution of gas molecules at each point on the nozzle opening surface has a distribution proportional to the cosine of the angle with respect to the normal to the nozzle opening surface, this is integrated over the entire opening surface and the distribution at each point on the sample surface Numerically calculate the incident amount of gas molecules. However, in this method, since the gas flow changes depending on the gas type and pressure, it is necessary to correct each distribution of scattering.

On the other hand, when processing is carried out in a range sufficiently smaller than the size of the nozzle opening, it is not necessary to realize a high pressure distribution in a wide range, and chamber contamination,
Considering gas loss and the like, it is practical to perform the process with a reduced flow rate. In the normal beam induction process, the process speed is saturated even if the gas pressure is increased, and therefore the gas flow rate should be limited also from this point. In such a case, these problems can be solved by making the gas flow rate variable in accordance with the display magnification corresponding to the size of the processing range. For this purpose, a mechanism for setting the gas flow rate and adjusting the gas flow valve according to the size of the processing region and the display magnification may be added before starting the processing process (opening the gas nozzle).

[0016]

[Function] The gas pressure distribution under the nozzle is as shown in FIG. 1, and by setting the setting angle of the nozzle to 60 degrees or more and 80 degrees or less, a wide gas pressure distribution area is set as the beam irradiation area. Can be produced and the beam-induced process can be performed over a wide range.

A groove that clearly shows the axial direction of the nozzle itself,
By providing a structure such as a protrusion, the position and angle of the nozzle can be accurately set, and the beam-induced processable area can be expanded and clarified.

By scanning the residence time of the beam on the processed sample according to the gas pressure distribution, the beam induction process can be performed uniformly. Further, the physical properties of the film in the beam induced deposition, the etching shape in the beam induced etching, etc. can be controlled to be uniform.

By superimposing and displaying the gas pressure distribution on the processed sample on the display for displaying the processed region, the region in which the beam-induced process is possible becomes clear, and the process uniformity within the processed region becomes clear. Is maintained. Further, by adjusting the gas flow rate according to the display magnification, the degree of vacuum in the processing chamber can be kept high, and at the same time, wasteful consumption of the reaction gas can be avoided.

[0020]

【Example】

<Embodiment 1> FIG. 5A shows an embodiment of the present invention in which the angle of the gas nozzle opening surface is set to 70 degrees with respect to the direction perpendicular to the sample. In this case, the shape of the nozzle opening was circular, the inner diameter was 0.33 mm, and the distance between the lower end of the opening surface and the sample surface was 150 μm. As for the pressure distribution on the sample, a small hole having a diameter of 50 μm was provided on the sample table on which the sample was installed, and the pressure of the gas incident thereon, that is, the number of incident molecules per unit time was measured. When the pressure on the sample surface was measured by this method, the result as shown in FIG. 5 (b) was obtained. The horizontal axis of the figure represents the distance from the tip of the nozzle when viewed in the vertical direction of the sample, where positive represents the portion visible from the nozzle tip and negative represents the portion hidden by the nozzle itself. For comparison, the result when the angle of the opening surface with respect to the sample is 45 degrees is shown in the same figure.

In the case of 45 degrees, the point where the pressure becomes maximum is about 150 μm below the nozzle when viewed in the vertical direction, and is the region where the beam cannot be irradiated. The total flow rate of tungsten carbonyl vapor as gas is 1 mTorr.l / s (3 x 1
(Corresponding to 0 ¹⁶ molecule / s), the maximum gas flux in the beam irradiation area is about 4 × 10 ¹⁸ just below the nozzle tip.
The molecule / cm ² / s. On the other hand, when the nozzle angle is 70 degrees, the maximum gas pressure in the distribution is immediately below the tip of the nozzle, and the maximum gas flux in the irradiation region is about 3 × 1.
0 ¹⁸ molecule / cm ² / s, which is 3 at 45 degrees
It was / 4. However, the gas flux is 2 × 10 ¹⁸ molecule / cm
The maximum distance from the nozzle tip is ² / s or more, which is 3
Since it is up to about 00 μm, it depends on other conditions,
A focused beam induction process is possible under a uniform gas pressure condition in a range of about 200 μm in length and width. This is about twice as much as when the nozzle angle is 45 degrees.

Further, since the distribution range of the gas pressure is wide in this angle setting, the nozzle itself is not irradiated with the beam during the process, and the problem caused by this can be avoided.
For example, in the case of an ion beam, if the nozzle itself is sputtered by ions and adheres to the sample, this causes sample contamination. Even in the case of the electron beam, the gas reacts on the nozzle, depositing metal on the nozzle and causing sample contamination. These problems are solved at the same time.

<Embodiment 2> FIGS. 6A to 6E show the shape of a nozzle according to a second embodiment of the present invention.
In the example of FIG. 6A, a needle-like protrusion 6 having a sharp tip is attached to the lower end of the nozzle to clearly show the direction of the central axis of the nozzle. FIG. 2B is a side sectional view of FIG. This makes it possible to easily read the center of the gas pressure distribution from the secondary electron image even when forming a film on a fine portion.
(C) is an example in which a groove indicating the axial direction of the nozzle is formed on the upper surface of the nozzle, and the direction of the nozzle can be confirmed by detecting this with a secondary electron image, and the direction can be corrected if necessary. it can.

(D) and (e) are concave and convex shapes 7 and 8 on the nozzle.
The angle with respect to the beam incident direction of the nozzle, that is, the angle with respect to the sample surface can be known from the relative position of these two protrusions. Therefore, it is possible to know whether or not the nozzle angle is set to the sample surface, and the adjustment can be performed. The directions can be further clarified by appropriately combining the above (a), (c), (d), and (e).

<Third Embodiment> FIG. 7 is a block diagram of a focused ion beam induced process apparatus shown as a third embodiment of the present invention. Shown here is a general non-mass separation type focused ion beam device for processing, 12 is a secondary electron detector, 18 is a display for showing the shape of the processed portion, 1
Reference numeral 4 is a fine movement mechanism for the nozzle position. The arrows in the figure show the flow of data and control. The fine movement mechanism 14 electrically detects the positional relationship between the sample 19 and the nozzle 20, and this information is input to the arithmetic circuit shown at 17. Normally, the secondary electron image of the processing portion is displayed on the display portion of 18, but in this device, the calculation result of the arithmetic circuit is input to this when performing the process, and the gas pressure distribution is expressed as contour lines. , It is possible to display the secondary electron image redundantly.

FIG. 3 shows an example of the displayed image. further,
By inputting the beam scanning conditions and the beam intensity to the arithmetic unit 17, it is possible to display them as a process velocity distribution. At this time, the dependence of the process speed on the beam scanning speed and the beam intensity must be input in advance as data. As an example, FIG. 2 shows the dependence of the deposition rate on the beam scanning speed in the focused ion beam induced deposition method, and FIG. 8 shows the dependence on the beam intensity.

<Fourth Embodiment> FIG. 9 is a block diagram of a focused ion beam induced etching apparatus shown as a fourth embodiment of the present invention. The position of the nozzle and the gas flow rate are sent from the respective setting mechanisms 14 and 23 to the arithmetic unit 22, and pattern information and coordinates of the processing region (data input by the user or a beam scanning control system when observing the processing region). (Determined from a magnification of 13), the gas pressure at each point in the processing area (pixel during digital scanning or a suitable representative point therein) is calculated. This gas pressure value,
The process speed at each point is calculated from the scanning speed set by the scanning control system 13 and the beam intensity set by the focusing system 10 based on the experimental data, and the maximum and minimum process speeds within the area are obtained. To be 3 and 8 are data in the focused ion beam induced deposition as described above. If the obtained process speed does not meet the required value, a control signal is sent to the gas flow rate control device 23 to adjust the gas flow rate to make it the required size. However, when the maximum and minimum gas flow rates determined by the performance of the gas introduction system and the vacuum exhaust system are exceeded, the flow rate is not changed and the user is informed of this fact.

<Embodiment 5> FIG. 10 is a block diagram of a focused beam induced process apparatus shown as a fifth embodiment of the present invention. In the third embodiment, the gas pressure distribution or process speed on the sample to be processed is displayed. In the fourth embodiment, the process speed is adjusted by the gas flow rate. However, in the present embodiment, the beam scanning method is used according to the gas pressure distribution. Feedback is applied to make the process speed constant in the processed region. For this purpose, a signal from the arithmetic unit 24 may be input to the beam scanning system 13 so that the process speed at each point of the processing region becomes constant by using the relationship between the beam scanning speed and the process speed. Usually, the beam scanning is performed by a digital method in which the beam staying time at each point is set. However, when the scanning speed in FIG. 3 is (beam staying time) = (beam diameter) / (beam scanning speed), Since there is a relationship, the beam diameter may be determined from the size of the processing pattern, and the beam stay time corresponding thereto may be set.

If the required beam scanning speed cannot be obtained from the performance of the beam scanning system, the process speed is not constant in the entire processing area, and the nonuniformity of the process speed does not suit the purpose of processing, this is displayed. It is displayed on the device 18. In such a case, it suffices to divide the processing region and realize uniformity in it. It can be used together with the adjustment of the gas flow rate described in the fourth embodiment. In this case, which of the adjustment of the scanning speed and the adjustment of the gas flow rate is prioritized depends on the evacuation speed, the type of gas, and the like. As an example, in the case of ion beam induced etching, when the gas supply is insufficient, the etching proceeds by the sputtering of the ion beam itself, not by the chemical reaction of the gas, so the material selectivity for the workpiece is better than that of the chemical reaction. At the same time, the processed shape of the surface has many irregularities. Therefore, a good gas supply is essential.

If the relationships corresponding to FIGS. 3 and 8 are required for each process, the same can be applied to the film deposition or etching using a plurality of gases.

<Sixth Embodiment> In the third, fourth and fifth embodiments, the distribution of the gas pressure supplied by the nozzle is displayed and the method of processing is shown. The size of the region required by the gas pressure distribution is shown. It is possible that the required process speed cannot be obtained due to insufficient gas pressure. In such a case, the condition may be satisfied if the sample can be tilted and the angle can be changed with respect to the direction of the gas nozzle and the beam. Most of the gas pressure distribution is in the shadow of the nozzle, and the high gas pressure part in the distribution cannot be used in many cases, but if the sample is tilted and the incident direction of the beam on the sample is changed, normal incidence is not possible. It is possible to irradiate the part of the gas which cannot be used with high gas pressure with the beam, which may result in an efficient process. FIG. 11 shows an example. When the gas pressure shown in the figure is necessary for the process, such processing is impossible when the nozzle angle is 80 degrees. However, when the sample angle is inclined by 20 degrees, the gas pressure distribution becomes as shown in FIG.
The angle between the sample and the nozzle is 60 degrees.
The beam irradiation area on the sample shown on the right side of the point P is
Moving to the left of the original point O allows the process.
At this time, not only the gas pressure distribution with respect to the sample but also the incident angle of the beam is changed, so that the ion incident amount per unit area, the reaction cross section in the reaction, and the ion sputtering efficiency in the case of the ion beam are changed, and the beam-induced reaction is changed. The reaction rate of changes. Since the size of the pattern is also stretched in the tilt direction, it is necessary to perform calculation by taking these information into consideration and input it to the beam scanning control system to change the shape of the drawing pattern, the beam scanning speed, and the like.

FIG. 13 and FIG. 14 show typical reaction cross sections in the ion beam induced deposition method and incident angle dependence of the sputtering rate. The electron beam induced process has a similar relationship with respect to the reaction cross section. When the sample is tilted, the ion beam sputtering efficiency also increases, but the process speed increases more than this, so this method is also effective in the ion beam induced deposition method.

<Embodiment 7> This embodiment shows a method of changing process conditions such as a scanning method in order to obtain a uniform process speed when the shape of the sample surface is not flat. When the surface of the processed sample is not flat, such as having a groove structure, the process speed in the inclined part on the sample shows a different dependence on the beam intensity and gas pressure from the flat part. This is because the incident direction of the beam and the incident direction of the gas from the nozzle are generally different. Further, as illustrated in FIG. 8, there is no simple proportional relationship between the beam intensity and the process speed, so the process speed is not constant. Therefore, in order to keep the process speed constant and perform uniform processing within the processing region, the beam scanning speed must be changed based on the known relationship between the beam scanning speed and the process speed. First, the inclination angle of the sample surface at each point in the processing region is obtained, and the flux of the gas and the beam intensity incident thereon are obtained. Further, the process velocity can be calculated from the reaction cross section depending on the beam incident angle. In the case of an ion beam, the sputter rate is required, but this also depends on the angle and must be taken into consideration. Since the process speed thus obtained is a function of the beam scanning speed, it is possible to make the process speed constant by changing the scanning speed at each point.

Taking focused ion beam induced deposition as an example,
Consider a case where a process is performed on a concave portion on a sample. When uniform beam scanning is performed, the film grows rapidly on the inclined side wall portion, and the film is not formed to have a uniform thickness as a whole, and the cross-sectional shape shown in FIG. This is because the incident angle dependence of the reaction cross-section area and the sputtering rate is as shown in FIGS. 13 and 14, and the gas nozzle is also inclined with respect to the sample surface. In order to form a uniform film, the difference in these conditions must be canceled out and the scanning speed must be determined so that the deposition rate at each point becomes equal. The relationship between the beam scanning rate and the deposition rate is shown in FIG. As shown in the figure, for a value smaller than the maximum value of the deposition rate, the desired deposition rate can always be obtained by adjusting the scanning speed.

As shown in FIG. 13, the reaction cross-sectional area is generally larger as the incident angle is larger. Therefore, the scanning speed at the inclined portion may be determined with respect to the maximum deposition speed at the flat portion. Therefore, in terms of the inclination angle, it is possible to match the process speed in the flat portion by slowing the scanning speed. On the contrary, it is possible to make the scanning speed very high.

FIG. 15B shows an example of the scanning method for forming a uniform film. The nozzle is on the upper left. The scanning speed on the right side wall is smaller than that on the left side because the gas flux on the right side wall facing the nozzle opening surface is higher and the film growth rate is higher. However, in this case, the surface shape changes as the process progresses, and the inclination angle also changes, so it is necessary to proceed with the process while monitoring the surface shape by the amount of secondary electrons generated, etc., except when a very thin film is attached. . In the apparatus configuration shown in FIG. 10, only the gas pressure distribution is taken into consideration, but if the signal from the secondary electron detector 12 is monitored, the inclination angle is used as data for calculation in 24, and the result is input to the beam scanning system 13. It is possible to always form a film with a uniform film thickness even on a sample having irregularities. Similarly, in the case of etching, a uniform shape can be obtained by changing the scanning speed from the dependence of the reaction speed on the inclination angle. On the contrary, it is also possible to change the scanning speed to form a concavo-convex shape on the flat portion, or to change the etching or embedding shape.

[0037]

According to the present invention, the efficiency of inspection and remodeling of an integrated circuit and the yield can be improved, and the development period of the integrated circuit can be shortened.

[Brief description of drawings]

FIG. 1 is a gas pressure distribution diagram on a sample surface near the tip of a nozzle.

FIG. 2 is a characteristic diagram of a relationship between a beam scanning speed and a film deposition speed in a focused ion beam deposition method.

FIG. 3 is an explanatory view of a display unit in which a gas pressure distribution is illustrated by isobars in an enlarged image of a sample processing unit.

FIG. 4 is an explanatory diagram of a relationship between a gas pressure and a film deposition rate in a focused ion beam deposition method.

FIG. 5 is a cross-sectional view (a) taken along the nozzle target axis when the angle of the nozzle opening surface is set to 70 degrees with respect to the sample surface, and when the angles of the nozzle opening surface with respect to the sample surface are set to 45 degrees and 70 degrees. Explanatory drawing of comparison (b) of the gas pressure distributions of FIG.

FIG. 6 is an explanatory view of a structure of a gas nozzle whose angle can be easily set.

FIG. 7 is a block diagram of a focused ion beam induced process device for displaying gas pressure distribution.

FIG. 8 is a characteristic diagram of the relationship between the beam intensity and the film deposition rate in the focused ion beam deposition method.

FIG. 9 is a block diagram of a focused ion beam induced etching apparatus in which a gas flow rate is variable according to a processing area.

FIG. 10 is a block diagram of a focused ion beam induced process apparatus for performing beam scanning with a constant process speed.

FIG. 11 is a gas pressure distribution diagram on the sample surface when the nozzles are set at 80 degrees each.

FIG. 12 is an explanatory diagram of a gas pressure distribution and a beam irradiable region when the sample is tilted by 20 degrees in FIG. 11.

FIG. 13 is an explanatory diagram of a relationship between a beam incident angle and a reaction cross section in a focused ion beam deposition method.

FIG. 14 is an explanatory diagram of a relationship between an ion incident angle and a sputtering rate.

FIG. 15 is a cross-sectional view (a) of film deposition in a sample concave portion when uniform scanning is performed, and an explanatory diagram of a scanning speed method (b) for performing uniform film formation.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Gas nozzle, 2 ... Isobar which shows gas pressure distribution, 3 ... Screen of a display device, 4 ... Boundary which shows a processable area, 5 ...
Processing area, 6 ... Inclination angle of nozzle, projection showing direction in horizontal plane, 7 ... Convex projection, 8 ... Concave projection, 9 ... Ion source, 10 ... Beam focusing section.

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Kaoru Umemura 1-280, Higashi Koigokubo, Kokubunji, Tokyo Inside the Central Research Laboratory, Hitachi, Ltd.

Claims (8)

[Claims] 1. In a beam-induced process for performing localized processing such as irradiation with a focused beam, film deposition, and etching, an angle of an opening surface of a nozzle for a beam-induced process for introducing a reactive gas to a surface to be processed with respect to a processed sample surface is 60. A beam-induced process device characterized by being set at not less than 80 degrees and not more than 80 degrees. 2. A beam induced process apparatus comprising a beam induced process nozzle having a shape for clearly setting an angle of an aperture surface with respect to a processed sample surface and a direction of the aperture surface in a beam scanning plane. 3. A process capable region or a region capable of obtaining a desired process speed corresponding to a gas pressure distribution determined from a nozzle height setting and a gas flow rate, in a display for enlarging and displaying a beam processing portion. A beam induced process device characterized by being displayed. 4. A beam induced process apparatus comprising a mechanism capable of adjusting a gas flow rate through a nozzle in accordance with a size of a beam processing area to expand or reduce a processable area. 5. The scanning speed of the beam or the beam intensity is set so that the process speed of etching, deposition, etc. becomes constant at any point in the range where the beam process is performed, according to the distribution of the gas pressure on the processed sample. Beam-induced process equipment characterized by optimization in terms of points. 6. A scanning speed of a beam according to a distribution of gas pressure on a processed sample so that a desired film quality such as a resistance value and mechanical strength of a film becomes constant in a process range regardless of a site in the film. A beam induced film deposition apparatus characterized by optimizing the intensity at each point to perform film formation. 7. Etching is performed by optimizing the beam scanning speed and intensity at each point so that the surface shape is constant in the process range and is constant regardless of the site in the process range according to the distribution of gas pressure on the processed sample. A beam induced etching apparatus characterized by performing. 8. When the gas pressure distribution on the processed sample does not adapt to the desired shape and size of the processed portion, the sample to be processed is tilted to obtain the desired gas pressure distribution on the sample. Beam induced process equipment.