JPH0696347B2 - Optical recording body - Google Patents

Optical recording body

Info

Publication number
JPH0696347B2
JPH0696347B2 JP60133550A JP13355085A JPH0696347B2 JP H0696347 B2 JPH0696347 B2 JP H0696347B2 JP 60133550 A JP60133550 A JP 60133550A JP 13355085 A JP13355085 A JP 13355085A JP H0696347 B2 JPH0696347 B2 JP H0696347B2
Authority
JP
Japan
Prior art keywords
group
ring
general formula
optical recording
resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60133550A
Other languages
Japanese (ja)
Other versions
JPS61291187A (en
Inventor
徹郎 村山
修一 前田
裕 黒瀬
Original Assignee
三菱化成株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三菱化成株式会社 filed Critical 三菱化成株式会社
Priority to JP60133550A priority Critical patent/JPH0696347B2/en
Publication of JPS61291187A publication Critical patent/JPS61291187A/en
Publication of JPH0696347B2 publication Critical patent/JPH0696347B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/244Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only
    • G11B7/246Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only containing dyes
    • G11B7/248Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only containing dyes porphines; azaporphines, e.g. phthalocyanines

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、光デイスク用の光学記録体に関する。TECHNICAL FIELD The present invention relates to an optical recording body for an optical disc.

従来の技術 光デイスク用の光学記録体としては、レーザー光のエネ
ルギーを効率良く吸収する必要があるため、記録に使用
する特定波長のレーザー光に対する吸収が大きい事、情
報の再生を正確に行なうため、再生に使用する特定波長
のレーザー光に対する反射率が高い事が必要である。
2. Description of the Related Art As an optical recording medium for an optical disc, it is necessary to efficiently absorb the energy of laser light. Therefore, the absorption of laser light of a specific wavelength used for recording is large, and accurate reproduction of information is required. It is necessary that the reflectance with respect to a laser beam of a specific wavelength used for reproduction is high.

この様な光学記録体としては、これまで、各種の金属、
金属化合物やカルコゲナイド等の無機化合物が提案され
ているが、これらの薄膜は、空気酸化を受けやすく、長
期間の保存が困難であつたり、紫外部や可視部の光に対
して感応性であり、日光、その他の光に弱い等の欠点が
あつた。
As such an optical recording material, various metals,
Inorganic compounds such as metal compounds and chalcogenides have been proposed, but these thin films are susceptible to air oxidation, difficult to store for a long period of time, and sensitive to light in the ultraviolet or visible region. However, there were some defects such as weakness in sunlight and other light.

有機化合物を用いた記録体としては、シアニン系色素、
スクワリリウム系色素、ナフトキノン系色素、フタロシ
アニン系色素等が提案されている。このうちシアニン系
色素、スクワリリウム系色素、ナフトキノン系色素は、
一般に安定性が悪く、長期間にわたる保存が難しく、そ
して反射率が低いため情報が読み出しにくい等の欠点が
ある。
As a recording material using an organic compound, a cyanine dye,
Squarylium dyes, naphthoquinone dyes, phthalocyanine dyes, etc. have been proposed. Of these, cyanine dyes, squarylium dyes, and naphthoquinone dyes
Generally, there are drawbacks such as poor stability, difficulty in storage for a long period of time, and difficulty in reading information due to low reflectance.

フタロシアニン系色素の一部のものも、半導体レーザー
の波長(800nm付近)に吸収を有するが、吸収が結晶変
態に伴ない容易に変化すると言う欠点を有する。例え
ば、バナジルフタロシアニンの蒸着膜における720nm付
近の吸収は、加熱により815nmまで変化する(Molecular
Crystals and Liquid Crystals33,149−170(197
6))。
Some of the phthalocyanine dyes also have absorption at the wavelength of the semiconductor laser (around 800 nm), but have the drawback that the absorption changes easily along with the crystal transformation. For example, the absorption around 720 nm in a vapor-deposited film of vanadyl phthalocyanine changes to 815 nm by heating (Molecular
Crystals and Liquid Crystals 33 , 149-170 (197
6)).

発明が解決しようとする問題点 本発明は、レーザー光、特に半導体レーザー光による書
き込み感度が高く、かつ保存安定性の良好な有機物の光
学記録体を提供する事を目的とする。
DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention An object of the present invention is to provide an optical recording material of an organic material, which has a high writing sensitivity to laser light, particularly a semiconductor laser light, and has good storage stability.

問題点を解決するための手段 本発明は、基板と、下記一般式〔I〕で示される光吸収
物質を含有する記録層とからなることを特徴とする光学
記録体をその要旨とする。
Means for Solving the Problems The gist of the present invention is an optical recording material comprising a substrate and a recording layer containing a light absorbing substance represented by the following general formula [I].

一般式〔I〕 (式中、環Z1〜環Z4は、置換基を有していてもよいチオ
フエン環、ピリジン環、ピラジン環またはイミダゾール
環を表わし、そしてAは周期律表第IB族、第IIA族、第I
IB族、第IIIA族、第IIIB族、第IVA族、第IVB族、第VB族
もしくは第VIII族に属する金属または該金属を含有する
化合物を表わす。) 本発明の光学記録体における一般式〔I〕で示される光
吸収物質において、環Z1〜環Z4のチオフエン環、ピリジ
ン環、ピラジン環またはイミダゾール環の置換基の例と
しては、メチル基、エチル基、トリフルオロメチル基、
ヒドロキシ基、フッ素、塩素または臭素が挙げられる。
General formula [I] (In the formula, ring Z 1 to ring Z 4 represent an optionally substituted thiophenene ring, pyridine ring, pyrazine ring or imidazole ring, and A represents Group IB, Group IIA of the periodic table, No. I
It represents a metal belonging to Group IB, Group IIIA, Group IIIB, Group IVA, Group IVB, Group VB or Group VIII or a compound containing the metal. ) In the light absorbing material represented by the general formula [I] in the optical recording material of the present invention, examples of the substituents of the thiophene ring, the pyridine ring, the pyrazine ring or the imidazole ring of the ring Z 1 to the ring Z 4 include a methyl group. , Ethyl group, trifluoromethyl group,
Included are hydroxy groups, fluorine, chlorine or bromine.

また、Aの第IB族、第IIA族、第IIIA族、第IIIB族、第I
VA族、第IVB族、第VB族または第VIII族に関する金属の
例としては、Cu、Mg、Zn、Sn、Pb、Fe、CoまたはNiが挙
げられ、その金属を含有する化合物としては、AlCl、In
Cl、TiO、SnCl2等が挙げられる。
In addition, A group IB, IIA group, IIIA group, IIIB group, I group
Examples of metals related to Group VA, Group IVB, Group VB or Group VIII include Cu, Mg, Zn, Sn, Pb, Fe, Co or Ni, and compounds containing the metal include AlCl , In
Examples include Cl, TiO, SnCl 2 and the like.

本発明の光学記録体は、特に、環Z1〜環Z4がチオフエン
環で、AがSnCl2、InCl、VOまたはTiOのものが好まし
い。
In the optical recording material of the present invention, it is particularly preferable that rings Z 1 to Z 4 are thiophene rings and A is SnCl 2 , InCl, VO or TiO.

上記一般式〔I〕で示される光吸収物質は、ジシアノチ
オフエン類、ジシアノピリジン類、ジシアノピラジン類
またはジシアノイミダゾール類と、金属または金属化合
物とを公知の方法たとえば、2,3−ジシアノチオフエン
と塩化第一スズとを加熱する等に従つて容易に合成する
ことができる。
The light-absorbing substance represented by the above general formula [I] is obtained by a known method such as dicyanothiophene, dicyanopyridines, dicyanopyrazine or dicyanoimidazole and a metal or a metal compound, for example, 2,3-dicyanothiophene. And stannous chloride can be easily synthesized by heating.

本発明の基板としては、ガラス、プラスチツクス等があ
げられる。プラスチツクスは、安全性、軽量性の点で好
適である。プラスチツクスとしては、アクリル樹脂、メ
タクリル樹脂、ポリカーボネート樹脂、塩化ビニル樹
脂、酢酸ビニル樹脂、ポリエステル樹脂、ポリエチレン
樹脂、ポリプロピレン樹脂、ポリアミド樹脂、ポリスチ
レン樹脂、エポキシ樹脂等が挙げられる。
Examples of the substrate of the present invention include glass and plastics. Plastics are preferable in terms of safety and lightness. Examples of the plastics include acrylic resin, methacrylic resin, polycarbonate resin, vinyl chloride resin, vinyl acetate resin, polyester resin, polyethylene resin, polypropylene resin, polyamide resin, polystyrene resin, and epoxy resin.

記録層の成膜方法としては、基板上に真空蒸着する方
法、樹脂溶液と混合して塗布する方法、溶媒に溶解させ
て、塗布または浸漬する方法等の公知の方法があげられ
る。特に、真空蒸着法が好ましい。
Examples of the method for forming the recording layer include known methods such as a method of vacuum deposition on a substrate, a method of coating with a resin solution and a method of dissolving in a solvent and coating or dipping. In particular, the vacuum vapor deposition method is preferable.

真空蒸着法としては、1×10-4Torr以上、好ましくは、
2×10-5Torr以上の高真空で、抵抗加熱等により前記一
般式〔I〕に示す化合物を加熱し、基板上に真空蒸着膜
を得る方法を挙げることができる。膜厚は、500〜3000
Å、特に1000〜2500Åが好ましい。
As the vacuum deposition method, 1 × 10 −4 Torr or more, preferably,
There can be mentioned a method of heating the compound represented by the general formula [I] by resistance heating or the like at a high vacuum of 2 × 10 −5 Torr or more to obtain a vacuum deposited film on the substrate. Film thickness is 500-3000
Å, especially 1000 to 2500Å is preferred.

塗布による製膜は、上記一般式〔I〕に示す化合物をバ
インダーとともに溶媒中に、溶解または分散させたもの
をスピンコートする事により得られる。バインダーとし
ては、ポリイミド樹脂、ポリアミド樹脂、ポリスチレン
樹脂、アクリル樹脂、ポリエステル樹脂、ポリカーボネ
ート樹脂、ポリスルホン樹脂、フエノール樹脂、ポリエ
ーテル樹脂、シリコン樹脂、セルロースエステル、セル
ロースエーテル、ポリ酢酸ビニル樹脂、ポリ塩化ビニル
樹脂、ポリ塩化ビニリデン樹脂、ポリウレタン樹脂等お
よびそれらの共重合体を挙げることができる。
The film formation by coating can be obtained by spin-coating the compound represented by the general formula [I] with a binder dissolved or dispersed in a solvent. As the binder, polyimide resin, polyamide resin, polystyrene resin, acrylic resin, polyester resin, polycarbonate resin, polysulfone resin, phenol resin, polyether resin, silicone resin, cellulose ester, cellulose ether, polyvinyl acetate resin, polyvinyl chloride resin , Polyvinylidene chloride resin, polyurethane resin and copolymers thereof.

その際樹脂に対する光吸収物質の比率は10wt%以上が望
ましい。
At that time, the ratio of the light absorbing substance to the resin is preferably 10 wt% or more.

溶媒としては、ジメチルホルムアミド、テトラヒドロフ
ラン、ジクロロメタン、クロロベンゼン等各種のものを
用いる事ができるが、溶解度の点で、ジメチルホルムア
ミドが好ましい。
As the solvent, various solvents such as dimethylformamide, tetrahydrofuran, dichloromethane and chlorobenzene can be used, but dimethylformamide is preferable in terms of solubility.

本発明の光学記録体の記録層は基板の両面に設けてもよ
いし、片面だけに設けてもよい。
The recording layer of the optical recording medium of the present invention may be provided on both sides of the substrate, or may be provided on only one side.

上記の様にして得られた記録体への記録は、基体の両面
または、片面に設けた記録層に1μm程度に集束したレ
ーザー光、好ましくは、半導体レーザーの光をあてる事
により行なう。レーザー光の照射された部分には、レー
ザーエネルギーの吸収による、分解、蒸発、溶融等の記
録層の熱的変形が起こる。
Recording on the recording medium obtained as described above is performed by irradiating a recording layer provided on both sides or one side of the substrate with a laser beam focused to about 1 μm, preferably a semiconductor laser beam. In the portion irradiated with laser light, thermal deformation of the recording layer such as decomposition, evaporation, and melting occurs due to absorption of laser energy.

記録された情報の再生は、レーザー光により、熱的変形
が起きている部分と起きていない部分の反射率の差を読
み取る事により行なう。
The recorded information is reproduced by using a laser beam to read the difference in reflectance between a portion where thermal deformation has occurred and a portion where thermal deformation has not occurred.

光源としては、He−Neレーザー、Arレーザー、半導体レ
ーザー等の各種のレーザーを用いる事ができるが、価
格、大きさの点で、半導体レーザーが特に好ましい。
As the light source, various lasers such as He-Ne laser, Ar laser, and semiconductor laser can be used, but the semiconductor laser is particularly preferable in terms of cost and size.

半導体レーザーとしては、中心波長830nm、中心波長780
nm、そしてそれより短波長のレーザーを使用する事がで
きる。
As a semiconductor laser, the central wavelength is 830 nm and the central wavelength is 780.
nm and shorter wavelength lasers can be used.

実施例 実施例1 2,3−ジシアノチオフエン(mp118〜122℃)1.34gと塩化
第1スズ1.13gとをクロロナフタリン2ml中に分散させ、
250℃、5時間加熱還流下反応させた。得られた反応液
を室温まで冷却した後、メタノール50mlを加え、還流下
3時間撹拌した。反応液を熱時過し、得られた結晶を
N−メチル−2−ピロリドン100mlに分散させ、200℃で
2時間撹拌後100℃まで冷却し、結晶を別した。さら
にN−メチル−2−ピロリドンによる同様の操作を2回
くり返し下記構造式で示される化合物(α−クロロナフ
タレン溶媒中でのλmax700nm)0.96gを得た。
Example 1 1.34 g of 2,3-dicyanothiophene (mp 118-122 ° C.) and 1.13 g of stannous chloride were dispersed in 2 ml of chloronaphthalene,
The reaction was carried out at 250 ° C. for 5 hours while heating under reflux. The obtained reaction solution was cooled to room temperature, 50 ml of methanol was added, and the mixture was stirred under reflux for 3 hours. The reaction solution was heated and the obtained crystals were dispersed in 100 ml of N-methyl-2-pyrrolidone, stirred at 200 ° C for 2 hours and then cooled to 100 ° C to separate the crystals. Further, the same operation using N-methyl-2-pyrrolidone was repeated twice to obtain 0.96 g of a compound represented by the following structural formula (λmax700 nm in an α-chloronaphthalene solvent).

上記構造式で示される本発明の光吸収物質を1×10-5To
rrの真空で300℃〜400℃に加熱し、板厚12mmのメタアク
リル樹脂板上に、真空蒸着した。水晶振動式膜厚計によ
る膜厚は、2000Åであつた。蒸着膜の最大吸収波長は、
720nmでありピークは巾広かつた。830nmでの反射率は33
%であつた。
The light-absorbing substance of the present invention represented by the above structural formula is added at 1 × 10 −5 To
It was heated to 300 ° C to 400 ° C in a vacuum of rr and vacuum-deposited on a methacrylic resin plate having a plate thickness of 12 mm. The film thickness measured by the crystal vibration type film thickness meter was 2000Å. The maximum absorption wavelength of the deposited film is
It was 720 nm and the peak was wide. 33 reflectance at 830 nm
It was in%.

この蒸着膜に、中心波長780nmの半導体レーザー光を出
力4mWで、ビーム径約1μmで照射した所、巾約1μ
m、ピツト長約2μmの輪郭の極めて明瞭な孔(ピツ
ト)が形成された。キヤリアレベル/ノイズレベル(C/
N)比は、50dBであつた。
This vapor-deposited film was irradiated with a semiconductor laser beam having a central wavelength of 780 nm at an output of 4 mW and a beam diameter of about 1 μm, and the width was about 1 μm.
m, a very clear contoured hole (pit) having a pit length of about 2 μm was formed. Carrier level / noise level (C /
The N) ratio was 50 dB.

実施例2〜17 実施例1に準じて構造式〔III〕〜〔XVIII〕で示される
光吸収物質を合成し、得られた光吸収物質を実施例1と
ほぼ同様の条件でメタアクリル樹脂板上に蒸着した。水
晶振動式膜厚計による膜厚は、2000±100Åの範囲内で
あつた。
Examples 2 to 17 Light absorbing substances represented by structural formulas [III] to [XVIII] were synthesized according to Example 1, and the obtained light absorbing substances were treated under substantially the same conditions as in Example 1 with a methacrylic resin plate. Evaporated on top. The film thickness measured by the crystal vibration type film thickness meter was within the range of 2000 ± 100Å.

これらの本発明の光吸収物質のα−クロロナフタレン溶
媒中の最大吸収波長、薄膜の最大吸収波長、半導体レー
ザー記録時のC/N比、保存安定性を前記実施例1の結果
と共に第1表に示す。表中、保存安定性は60℃、80%の
恒温恒湿槽中で10日間保存した後の、半導体レーザーに
よる書き込み性能(C/N比)を示す。
The maximum absorption wavelength of these light-absorbing substances of the present invention in the α-chloronaphthalene solvent, the maximum absorption wavelength of the thin film, the C / N ratio during semiconductor laser recording, and the storage stability are shown in Table 1 together with the results of Example 1 above. Shown in. In the table, the storage stability indicates the writing performance (C / N ratio) by a semiconductor laser after storage for 10 days in a constant temperature and humidity chamber at 60 ° C and 80%.

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】基板と、下記一般式〔I〕で示される光吸
収物質を含有する記録層とからなることを特徴とする光
学記録体。 一般式〔I〕 (式中、環Z1〜環Z4は、置換基を有していてもよいチオ
フエン環、ピリジン環、ピラジン環またはイミダゾール
環を表わし、そしてAは周期律表第IB族、第IIA族、第I
IB族、第IIIA族、第IIIB族、第IVA族、第IVB族、第V B
族もしくは第VIII族に属する金属または該金属を含有す
る化合物を表わす)
1. An optical recording material comprising a substrate and a recording layer containing a light absorbing substance represented by the following general formula [I]. General formula [I] (In the formula, ring Z 1 to ring Z 4 represent an optionally substituted thiophenene ring, pyridine ring, pyrazine ring or imidazole ring, and A represents Group IB, Group IIA of the periodic table, No. I
Group IB, Group IIIA, Group IIIB, Group IVA, Group IVB, Group VB
Represents a metal belonging to Group VIII or Group VIII or a compound containing the metal)
【請求項2】特許請求の範囲第1項記載の光学記録体に
おいて、光吸収物質が下記一般式〔II〕で示される物。 一般式〔II〕 (式中、環Z1〜環Z4は水素原子、アルキル基、ハロゲン
化アルキル基、ヒドロキシ基もしくはハロゲン原子で置
換されていてもよいチオフエン環、ピリジン環、ピラジ
ン環またはイミダゾール環を表わし、そしてAはSn、Sn
Cl2、Pb、Fe、Ni、Co、VO、InCl、TiO、Cu、Mg、Znまた
はAlClを表わす)
2. The optical recording material according to claim 1, wherein the light absorbing substance is represented by the following general formula [II]. General formula (II) (In the formula, ring Z 1 to ring Z 4 represent a hydrogen atom, an alkyl group, a halogenated alkyl group, a hydroxy group or a thiophene ring optionally substituted with a halogen atom, a pyridine ring, a pyrazine ring or an imidazole ring, and A is Sn, Sn
Cl 2 , Pb, Fe, Ni, Co, VO, InCl, TiO, Cu, Mg, Zn or AlCl)
【請求項3】特許請求の範囲第1項記載の光学記録体に
おいて、光吸収物質が下記一般式〔III〕で表わされる
物。 一般式〔III〕 (式中、AはSnCl2、Pb、Fe、Ni、Co、VO、InCl、TiOま
たはZnを表わす)
3. The optical recording material according to claim 1, wherein the light absorbing substance is represented by the following general formula [III]. General formula (III) (In the formula, A represents SnCl 2 , Pb, Fe, Ni, Co, VO, InCl, TiO or Zn)
JP60133550A 1985-06-19 1985-06-19 Optical recording body Expired - Lifetime JPH0696347B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60133550A JPH0696347B2 (en) 1985-06-19 1985-06-19 Optical recording body

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60133550A JPH0696347B2 (en) 1985-06-19 1985-06-19 Optical recording body

Publications (2)

Publication Number Publication Date
JPS61291187A JPS61291187A (en) 1986-12-20
JPH0696347B2 true JPH0696347B2 (en) 1994-11-30

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JP2514677B2 (en) * 1987-04-10 1996-07-10 東洋インキ製造株式会社 Optical recording medium
CA1337194C (en) * 1988-04-07 1995-10-03 Koichi Kamijima Tetraazaporphin, process for producing the same, as well as optical recording media using the same and production processes thereof
DE3829851A1 (en) * 1988-09-02 1990-03-08 Basf Ag TETRAAZAPORPHYRINE AND RADIATION-SENSITIVE COATING FILMS
US4994352A (en) * 1988-11-25 1991-02-19 The Dow Chemical Company Dye-enhanced deposition of elemental metals and metalloids on substrates
JP4625947B2 (en) * 2004-11-22 2011-02-02 国立大学法人広島大学 Optoelectronic device
EP2138545B1 (en) 2007-03-07 2014-01-08 Hiroshima University Use of porphyrazine derivative as semiconductor
JP2022101077A (en) * 2020-12-24 2022-07-06 AZUL Energy株式会社 Metal complex or adduct thereof, catalyst comprising metal complex or adduct thereof and method for producing the same, liquid composition or electrode containing catalyst, and air battery or fuel cell equipped with electrode

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