JPH0690528B2 - Light receiving member - Google Patents

Description

Description: TECHNICAL FIELD The present invention relates to light (here, light in a broad sense, ultraviolet light, visible light,
The present invention relates to a light receiving member sensitive to electromagnetic waves such as infrared rays, X rays, and γ rays). More specifically, it relates to a light receiving member suitable for using coherent light such as laser light.

[Description of Prior Art]

As a method of recording digital image information as an image, an electrostatic latent image is formed by optically scanning a light receiving member with laser light modulated according to the digital image information, and then the latent image is developed, Further, a method of recording an image is known, in which transfer, fixing and the like are performed as necessary. In particular, in the image forming method by electrophotography, a small and inexpensive He-Ne laser or semiconductor laser ( It is common to carry out image recording using a light emission wavelength of 650 to 820 nm).

By the way, as a light receiving member for electrophotography suitable when using a semiconductor laser, in addition to the fact that the matching of the light sensitive region is superior to other types of light receiving members,
The Vickers hardness is high, and the problem of pollution is small. It is evaluated, for example, in JP-A-54-86341 and JP-A-56-837.
Attention has been paid to a light receiving member made of an amorphous material containing silicon atoms (hereinafter abbreviated as "a-Si") as disclosed in Japanese Patent No. 46.

However, in the above-mentioned light receiving member, when the light receiving layer is an a-Si layer having a single layer structure, it is possible to secure a dark resistance of 10 ¹² Ωcm or more required for electrophotography while maintaining its high photosensitivity. Is required to structurally contain a hydrogen atom, a halogen atom, or a boron atom in addition to them in a controlled amount in a specific amount range. Therefore, various conditions for forming a layer are required. Is required to be strictly controlled, and there are considerable restrictions on the tolerance of the design of the light receiving member. It has been proposed to improve the design tolerance by making the high photosensitivity effective even if the dark resistance is low to some extent. That is, for example, JP 54-121743 A, JP 57-
No. 4053, JP-A-57-4172, the light-receiving layer has a layered structure of two or more layers in which layers having different conductivity characteristics are laminated, and a depletion layer is formed inside the light-receiving layer, or JP-A-57-52178, 52179, 52180, 58159
No. 58160, No. 58161, each of which has a multilayer structure in which a barrier layer is provided between the support and the photoreceptive layer or / and on the upper surface of the photoreceptive layer. A light receiving member having improved dark resistance has been proposed.

However, such a light-receiving layer having a multi-layered light-receiving layer has a variation in the layer thickness of each layer, and when laser recording is performed using this, the laser beam is a coherent monochromatic light. From the laser light irradiation side free surface, each layer constituting the light receiving layer and the layer interface between the support and the light receiving layer (hereinafter, both the free surface and the layer interface are collectively referred to as “interface”). Often, each of the reflected light that is reflected causes interference.

This interference phenomenon is a so-called
It appears as an interference fringe pattern, which causes a defective image. In particular, when forming a halftone image with high gradation, a blocking image with extremely poor discrimination is provided.

Another important point is that the absorption of the laser light in the light-receiving layer decreases as the wavelength region of the semiconductor laser light used becomes longer, which causes a problem that the interference phenomenon becomes remarkable. .

That is, for example, in a structure having two or more layers (multilayer), an interference effect occurs in each of those layers, and the respective interferences act synergistically to form an interference fringe pattern. If this directly affects the transfer member and the interference fringes corresponding to the interference fringe pattern are transferred and fixed on the member and appear on the visible image to cause a defective image, there is a problem.

As a measure for solving such a problem, (a) a method of diamond-cutting the surface of a support to form irregularities of ± 500Å to ± 10000Å to form a light-scattering surface (for example, JP-A-58-162975).
(See JP-A-58-165845), (b) A method of providing a light absorbing layer by black-anodizing the surface of an aluminum support or dispersing carbon, a coloring pigment or a dye in a resin (for example, JP-A-58-165845). (C) A method of providing a light-scattering / antireflection layer on the surface of a support by subjecting the surface of the aluminum support to a satin-finished alumite treatment or providing sandblasted fine irregularities in the shape of a grain (for example, a special method). Kaisho
No. 57-16554) is proposed.

Although these proposed methods bring some results, they are not sufficient to completely eliminate the interference fringe pattern appearing on the image.

That is, in the method (a), a large number of irregularities of a specific t are provided on the surface of the support, which prevents the appearance of an interference fringe pattern due to the light scattering effect for a while.
Since the specularly reflected light component still remains as the light scattering, the interference fringe pattern due to the specularly reflected light remains, and the irradiation spot spreads due to the light scattering effect on the surface of the support, and The resolution will be reduced.

With regard to the method (b), the black alumite treatment cannot completely absorb the light, and the reflected light on the surface of the support remains. Further, when providing the color pigment dispersed resin layer,
When the a-Si layer is formed, the degassing phenomenon occurs in the resin layer, the layer quality of the formed light-receiving layer is significantly deteriorated, and the resin layer is damaged by the plasma during the formation of the a-Si layer. Therefore, there is a problem that the original absorption function is reduced and the subsequent formation of the a-Si layer is adversely affected by the deterioration of the surface state.

Regarding the method of (c), for example, in terms of incident light, a part of the incident light is reflected on the surface of the light-receiving layer to become reflected light,
The rest is the transmitted light that has entered the inside of the light receiving layer. On the surface of the support, part of the transmitted light is scattered and becomes diffused light, and the rest is specularly reflected and becomes reflected light, and part of it becomes outgoing light and goes out. However, since the emitted light is a component that interferes with the reflected light and remains in any case, the interference fringe pattern does not completely disappear.

By the way, in order to prevent interference in this case, there is an attempt to increase the diffusivity of the surface of the support so that multiple reflection inside the light-receiving layer does not occur. The light diffuses to cause halation, which ultimately reduces the resolution.

In particular, in the light receiving member having a multi-layered structure, even if the surface of the support is irregularly roughened, the light reflected by the surface of the first layer, the second light
The reflected light from the layer and the specularly reflected light from the surface of the support interfere with each other to form an interference fringe pattern according to the thickness of each layer of the light receiving member. Therefore, in the light receiving member having a multilayer structure, it is impossible to completely prevent the interference fringes by irregularly roughening the surface of the support.

Also, when the surface of the support is irregularly roughened by a method such as sandblasting, the surface roughness varies widely among the lots, and even within the same lot, the surface roughness is uneven. , There is a problem in manufacturing control. In addition, relatively large projections are often formed randomly, and such large projections cause local breakdown of the photoreceptor layer.

Also, when the surface of the support is simply roughened,
Since the light-receiving layer is deposited along the uneven shape of the surface of the support, the uneven surface of the uneven surface of the support and the uneven surface of the uneven surface of the light-receiving layer are parallel to each other, and the incident light is bright in that member. Portions and dark areas are caused, and a light and dark stripe pattern appears in the entire light receiving layer due to the non-uniformity of the layer thickness of the light receiving layer. Therefore, it is not possible to completely prevent the occurrence of interference fringe patterns only by regularly roughening the surface of the support.

Also, when a light-receiving layer having a multi-layered structure is deposited on a support whose surface is regularly roughened, regular reflection light on the support surface,
In addition to the interference with the reflected light on the surface of the light receiving layer, the interference due to the reflected light at the interface between the layers is added, so that the degree of appearance of the interference fringe pattern of the light receiving member having a further structure becomes more complicated.

[Object of the Invention]

An object of the present invention is to eliminate the above-mentioned problems and satisfy various requirements for a light-receiving member having a light-receiving layer mainly composed of a-Si.

That is, the main object of the present invention is that electrical, optical, and photoconductive properties are substantially stable regardless of the use environment, are substantially stable to light, and have excellent light fatigue resistance, and even when repeatedly used, a deterioration phenomenon. To provide a light-receiving member having a light-receiving layer composed of a-Si, which is excellent in durability and moisture resistance, has no or almost no residual potential observed, and is easy to manage in production. is there.

Another object of the present invention is to provide a photoreceptive member having a photoreceptive layer composed of a-Si, which has a high photosensitivity in the entire visible light region, an excellent matching property with a semiconductor laser, and a fast photoresponse. To provide.

Still another object of the present invention is to provide a light-receiving member having a light-receiving layer composed of a-Si, which has high photosensitivity, high SN ratio characteristics, and high electrical withstand voltage.

Another object of the present invention is to provide excellent adhesion between the layer provided on the support and the support or between the layers of the laminated layers,
Structure-strict and stable, high layer quality, a-
It is to provide a light receiving member having a light receiving layer composed of Si.

Still another object of the present invention is suitable for image formation using coherent monochromatic light, and even during long-term repeated use, there is no appearance of interference fringe patterns and spots during reversal development, and there are no image defects or images. To provide a light-receiving member having a light-receiving layer composed of a-Si, capable of obtaining a high-quality image with high density, high density, clear halftone, and no blurring. It is in.

[Structure of Invention]

The present inventors have earnestly studied to overcome the above-mentioned problems of the conventional light-receiving member and achieve the above-mentioned object, and as a result, have obtained the following findings, and based on the findings, the present invention Was completed.

That is, the light receiving member of the present invention contains, on a support, a silicon atom, at least one of a germanium atom and a tin atom, and at least one selected from an oxygen atom, a carbon atom and a nitrogen atom. A light-receiving member having a multi-layered light-receiving layer having at least a photosensitive layer made of an amorphous material, wherein the surface of the support has a recess width D of 500 μm or less and a curvature radius R and width of the recess. D and 0.0
It is characterized by having irregularities due to a plurality of spherical trace dents with 35 ≦ D / R.

By the way, the findings obtained by the inventors of the present invention as a result of their earnest studies are an outline, in a light-receiving member having a plurality of layers on a support, the surface of the support is provided with irregularities due to a plurality of spherical trace depressions. As a result, the problem of the interference fringe pattern that appears during image formation is solved.

This finding is based on the factual relations obtained by various experiments that the present inventors have tried.

This will be described below with reference to the drawings in order to facilitate understanding.

FIG. 1 is a schematic view showing a layer structure of a light receiving member 100 according to the present invention, on a support 101 having an uneven shape with a plurality of minute spherical trace dents, along the inclined surface of the unevenness, A second layer 10 having a first layer 102 'and a free surface 103.
2 shows a light receiving member having a light receiving layer 102 of 2 ″.

2 and 3 are views for explaining the problem of the interference fringe pattern in the light receiving member of the present invention.

FIG. 3 is an enlarged view showing a part of a conventional light receiving member in which a light receiving layer having a multilayer structure is deposited on a support whose surface is regularly roughened. In the figure, 301 is the first layer, 3
02 indicates the second layer, 303 indicates the free surface, and 304 indicates the interface between the first layer and the second layer. As shown in FIG.
When the surface of the support is simply roughened by a means such as cutting, the light-receiving layer is usually formed along the irregular shape of the surface of the support, and therefore the uneven surface of the surface of the support is uneven. And the inclined surface of the unevenness of the light receiving layer have a parallel relationship.

Due to this, for example, the light receiving layer is the first layer 301.
Then, in the light receiving member having a multilayer structure composed of two layers, that is, the second layer 302, for example, the following problems are constantly caused. That is, since the interface 304 between the first layer and the second layer and the free surface 303 are in a parallel relationship, the interface 30
The reflected light Re ₂ of the reflected light Re ₁ and the free surface in the four directions are coincident, the interference fringes occur in accordance with the thickness of the second layer.

FIG. 2 is an enlarged view of a part of FIG. 1, and as shown in FIG. 2, the light receiving member of the present invention has an uneven shape formed by a plurality of minute spherical trace dents on the surface of the support. Since the light-receiving layer thereon is deposited along the uneven shape, for example, the light-receiving layer is a multilayer light-receiving member having a first layer 201 and a second layer 202. That is, the interface 204 between the first layer 201 and the second layer 202, and the free surface 203 are
Each is formed into an uneven shape due to a spherical trace dent along the uneven shape of the support surface. Assuming that the radius of curvature of the spherical trace depression formed on the interface 204 is R ₁ and the radius of curvature of the spherical trace depression formed on the free surface is R ₂ , R ₁ and R ₂ are R ₁ ≠ R ₂
Therefore, the reflected light at the interface 204 and the reflected light at the free surface 203 have different reflection angles, that is, θ ₁ and θ ₂ in FIG. ₂ are θ ₁ ≠ θ _2. , The direction is different, and the wavelength shift represented by l ₁ + l ₂ −l ₃ using l ₁ , l ₂ , and l ₃ shown in FIG. ₂ is not constant and changes. Sheer ring interference corresponding to the Tonling phenomenon occurs, and the interference fringes are dispersed in the depression. As a result, even if microscopic interference fringes appear, the images that appear through such a light receiving member will not be visually perceptible.

That is, the use of a support having a surface shape that increases is a light-receiving member having a multi-layered light-receiving layer formed thereon, in which light passing through the light-receiving layer has a layer interface and a support. It is possible to effectively prevent the formed image from forming a striped pattern due to the reflection on the surface and the interference between them, and to obtain a light receiving member capable of forming an excellent image.

By the way, the radius of curvature R and the width D of the concave-convex shape due to the spherical trace depressions on the surface of the support of the light receiving member of the present invention effectively achieve the effect of preventing the occurrence of interference fringes in the light receiving member of the present invention. It is an important factor to do.
The present inventors have made the following discoveries as a result of various experiments. That is, the radius of curvature R and the width D are as follows: If the above condition is satisfied, there are 0.5 or more Newton rings due to shear ring interference in each of the dents. Furthermore, the following formula: If the above condition is satisfied, there will be one or more Newton rings due to shear ring interference in each of the dent depressions.

Therefore, in order to prevent the generation of the interference fringes in the light receiving member by dispersing the interference fringes generated in the entire light receiving member in the respective trace depressions, Is 0.035, preferably 0.055 or more.

In addition, the width D of the unevenness due to the trace depression is 500 μ at the maximum.
m or less, preferably 200 μm or less, more preferably 1
It is desirable to set it to 00 μm or less.

The light-receiving layer formed on the support having the specific surface shape as described above is a silicon atom, and an amorphous material containing a germanium atom and / or at least one of a tin atom, particularly a silicon atom (Si). , At least one of a germanium atom (Ge) and a tin atom (Sn),
Preferably, it is composed of an amorphous material containing at least one of a hydrogen atom (H) and a halogen atom (X), and further includes an oxygen atom (O), a carbon atom (C) and a nitrogen atom (N). At least one selected from the above is contained in all or part of the light-receiving layer, and further, if necessary, a substance controlling conductivity is contained in all or part of the layers. You can The light receiving layer has a multi-layer structure, and particularly preferably has a charge injection blocking layer containing a substance that controls conductivity as one of the constituent layers, and / or an obstacle wall. It is desirable to have one of them.

Regarding the preparation of the light-receiving layer of the light-receiving member of the present invention, it is necessary to accurately control the layer thickness at the optical level in order to efficiently achieve the above-mentioned object of the present invention. Vacuum deposition methods such as ion deposition, sputtering, ion plating, etc. are always used.
A CVD method, a thermal CVD method or the like can also be adopted.

The specific contents of the light receiving member of the present invention will be described below with reference to the illustrated embodiments, but the light receiving member of the present invention is not limited to these embodiments.

FIG. 1 is a diagram schematically showing the layer structure of the light receiving member of the present invention, in which 100 is a light receiving member, 1
01 is a support, 102 is a light receiving layer, and 103 is a free surface.

Support The surface of the support 101 in the light receiving member of the present invention has unevenness smaller than the resolving power required for the light receiving member, and the unevenness is due to a plurality of spherical dents.

Hereinafter, the shape of the surface of the support in the light-receiving member of the present invention and a preferred production example thereof will be described with reference to FIGS. 4 and 5, but the shape of the support in the light-receiving member of the present invention and a method for producing the same will be described. It is not limited by these.

FIG. 4 schematically shows a typical example of the shape of the surface of the support in the light receiving member of the present invention by partially enlarging a part of the uneven shape.

In FIG. 4, 401 is a support, 402 is the surface of the support, 403 is a rigid spherical body, and 404 is a spherical dent.

Further, FIG. 4 also shows an example of a preferred manufacturing method for obtaining the surface shape of the support. That is, a rigid true sphere 40
3 is allowed to drop from a position at a predetermined height above the surface 402 of the support so as to collide with the surface 402 of the support, thereby forming a spherical depression 4
It shows that 04 can be formed. Then, by using a plurality of rigid true spheres 403 having substantially the same diameter R ′ and dropping them from the same height h at the same time or in sequence, the support surface 402 has substantially the same radius of curvature R. And a plurality of spherical pits 404 having approximately the same width D can be formed.

FIG. 5 shows some typical examples of the support body on the surface of which the uneven shape is formed by a plurality of spherical trace depressions as described above.

In the example shown in FIG. 5 (A), a plurality of spheres 503, 503, ... Having almost the same diameter are regularly dropped from the same height on different portions of the surface 502 of the support 501 to be approximately the same. A plurality of trace dents 504, 504, ... Having the same radius of curvature and almost the same width are densely formed so as to overlap each other to form a regular uneven shape. In this case, in order to form the recesses 504, 504, ... Which overlap each other, the support surface 502 of the sphere 503 is formed.
Needless to say, it is necessary to let the spheres 503, 503, ...

Further, in the example shown in FIG. 5 (B), two kinds of spheres 503, 503 '... Having different diameters are dropped from almost the same height or different heights, and two kinds of spheres are formed on the surface 502 of the support 501. , And a plurality of depressions 504, 504 '... Of two kinds of widths are densely formed so as to overlap each other to form irregularities with irregular heights on the surface.

Further, FIG. 5 (C) (front view and sectional view of the surface of the support)
In the example shown in, a plurality of spheres 503, 503, ... Of approximately the same diameter are randomly dropped from the approximately same height on the surface 502 of the support 501, and approximately the same radius of curvature and multiple types of widths are provided. A plurality of recesses 504, 504, ... Has are formed so as to overlap each other, and irregular irregularities are formed.

As described above, by dropping the rigid true sphere on the surface of the support, it is possible to form an uneven shape due to the spherical trace depression, but in this case, the diameter of the rigid true sphere, the height to be dropped,
By appropriately selecting various conditions such as the hardness of the rigid true sphere and the surface of the support, or the amount of spheres to be dropped, a plurality of spherical dents having a desired radius of curvature and width can be formed on the surface of the support in a predetermined manner. It can be formed with a high density. That is, by selecting the above conditions, the height and pitch of the unevenness formed on the surface of the support can be freely adjusted according to the purpose, and a support having a desired unevenness on the surface can be obtained. Obtainable.

Then, regarding the support of the light receiving member to the surface of the uneven shape, a method of cutting and creating with a diamond tool using a lathe, a milling machine, etc. has been proposed and is an effective method as such, In this method, it is indispensable to use cutting oil, remove chips that are inevitably generated by cutting, and remove cutting oil that remains on the cutting surface, and in the end, processing is complicated and efficient. In the present invention, since the uneven surface shape of the support is formed by the spherical trace depressions as described above, the above problem is completely eliminated and a desired uneven surface support is obtained. It can be created efficiently and easily.

The support 101 used in the present invention may be either conductive or electrically insulating. As the conductive support, for example, NiCr, stainless steel, Al, Cr, Mo,
Examples include metals such as Au, Nb, Ta, V, Ti, Pt, and Pb, and alloys thereof.

Examples of the electrically insulating support include films or sheets of synthetic resin such as polyester, polyethylene, polycarbonate, cellulose, acetate, polypropylene, polyvinyl chloride, polyvinylidene chloride, polystyrene and polyamide, glass, ceramics, paper and the like. It is preferable that at least one surface of these electrically insulating supports is subjected to a conductive treatment, and a light receiving layer is provided on the surface side subjected to the conductive treatment.

For example, if it is glass, NiCr, Al, Cr,
Mo, Au, Ir, Nb, Ta, V, Ti, Pt, Pd, In ₂ O ₃ , SnO ₂ , I
Conductivity is provided by providing a thin film made of TO (In ₂ O ₃ + SnO ₂ ) or the like, or synthetic resin film such as polyester film is made of NiCr, Al, Ag, Pb, Zn, Ni,
A thin film of a metal such as Au, Cr, Mo, Ir, Nb, Ta, V, Tl, or Pt is provided on the surface by vacuum evaporation, electron beam evaporation, sputtering, or the surface is laminated with the metal. Conductivity is given to the surface. The shape of the support may be any shape such as a cylindrical shape, a belt shape, and a plate shape, but the shape can be appropriately determined depending on the application and the desire. For example, the light receiving member 100 of FIG.
When used as an electrophotographic image forming member, it is desirable to use an endless belt or a cylinder for continuous high speed copying. The thickness of the support is appropriately determined so that a desired light-receiving member can be formed, but when flexibility is required as the light-receiving member, a range in which the function as the support is sufficiently exhibited It can be made as thin as possible.
However, in terms of mechanical strength and the like in terms of manufacturing and handling of the support, it is usually 10 μm or more.

Next, in the case where the light receiving member of the present invention is used as a light receiving member for electrophotography, an example of an apparatus for manufacturing the surface of the support will be described with reference to FIGS. 6 (A) and 6 (B). However, the present invention is not limited thereby.

For electrophotography, as a support for the light-receiving member, aluminum alloy or the like is subjected to ordinary extrusion processing to form a boathole tube or a mandrel tube, and a drawn tube obtained by further drawing is subjected to heat treatment or heat treatment as necessary. A cylindrical (cylindrical) substrate that has been subjected to a treatment such as tempering is used.
Using the manufacturing apparatus shown in FIGS. (A) and (B), an uneven shape is formed on the surface of the support.

Examples of the sphere used for forming the above-mentioned uneven shape on the surface of the support include stainless steel, aluminum,
Various rigid balls such as steel, nickel, brass and other metals, ceramics, plastics and the like can be mentioned, and stainless and steel rigid spheres are preferable for reasons such as durability and cost reduction. And the hardness of such a sphere may be higher or lower than the hardness of the support,
When the sphere is used repeatedly, it is desirable that the hardness is higher than the hardness of the support.

FIGS. 6 (A) and 6 (B) are schematic cross-sectional views of the entire manufacturing apparatus, in which 601 is an aluminum cylinder for making a support, and the cylinder 601 preliminarily finishes the surface to an appropriate smoothness. It may be.

The cylinder 601 is pivotally supported by a rotary shaft 602,
It is driven by an appropriate driving means 603 such as a motor, and can be rotated about its axis. The rotation speed is appropriately determined and controlled in consideration of the density of the spherical trace depressions to be formed, the supply amount of the rigid true sphere, and the like.

Reference numeral 604 denotes a drop device for naturally dropping the rigid true sphere 605. The ball feeder 606 for storing and dropping the rigid true sphere 605 swings so that the rigid true sphere 605 easily falls from the feeder 606. A vibrating machine 607, a collection tank 60 for collecting the rigid spherical body 605 that collides with the cylinder and falls.
8. Feeder 606 with rigid spherical body 605 collected in collection tank 608
Ball feeder 609, feeder 609 for pipe transport to
A cleaning device 610 for cleaning the rigid spherical body in the middle of the process, a liquid reservoir 611 for supplying cleaning liquid (solvent etc.) to the cleaning device 610 via a nozzle, etc., a recovery tank 612 for recovering the liquid used for cleaning, etc. It is configured.

The amount of the rigid spherical body that naturally falls from the feeder 606 is appropriately adjusted depending on the degree of opening / closing of the drop opening 613, the degree of rocking by the vibrator 607, and the like.

Photoreceptive Layer In the photoreceptive member 100 of the present invention, the photoreceptive layer 102 is provided on the support 101, and the receptive layer 102 is a silicon atom and at least one of a germanium atom and a tin atom. And preferably further comprises an amorphous material containing at least one of a hydrogen atom and a halogen atom, containing at least one selected from an oxygen atom, a carbon atom and a nitrogen atom, and further, The light-receiving layer can contain a substance that controls conductivity, if necessary. The light-receiving layer 102 of the light-receiving member 100 of the present invention has a multi-layer structure, for example, in the example shown in FIG. 1, it is composed of a first layer 102 ′ and a second layer 102 ″, It has a free surface 103 on the side of the photoreceptor layer opposite the support side.

By the way, the purpose of incorporating a germanium atom and / or a tin atom into the light-receiving layer of the light-receiving member of the present invention is mainly to improve the absorption spectrum characteristics on the long wavelength side of the light-receiving member.

That is, by containing a germanium atom and / or a tin atom in the light-receiving layer, the light-receiving member of the present invention exhibits various excellent properties, and particularly includes the visible light region. The photosensitivity is excellent and the light responsivity is fast with respect to the light of the wavelength in the entire range from the relatively short wavelength to the relatively wavelength. And this is especially remarkable when a semiconductor laser is used as a light source.

In the light receiving layer in the present invention, germanium atoms and / or tin atoms are contained in the entire layer region of the light receiving layer in a uniform distribution state or in a non-uniform distribution state.

(Here, the uniform distribution state means germanium atoms or /
Also, it means that the distribution concentration of tin atoms is uniform in the plane direction parallel to the surface of the support of the photoreceptive layer, and is also uniform in the layer thickness direction of the photoreceptive layer. ,
The distribution concentration of germanium atoms and / or tin atoms is uniform in the plane direction parallel to the support surface of the light receiving layer,
It is non-uniform in the thickness direction of the light receiving layer. ) And, in the light receiving layer of the present invention, in particular, a relatively large amount of germanium atoms and / or tin atoms are uniformly distributed in the end portion (first layer 102 'in FIG. 1) on the support side. It is desirable to provide a layer or to contain a germanium atom and / or a tin atom so as to be distributed more on the support side than on the free surface side. In such a case, the germanium atom or the tin atom at the end on the support side is preferable. By extremely increasing the distribution concentration of / and tin atoms, when a long-wavelength light source such as a semiconductor laser is used, most of the light is absorbed in the constituent layer or layer region close to the free surface side of the light-receiving layer. Since light having a long wavelength that cannot be cut off is substantially completely absorbed in the constituent layer or layer region of the light-receiving layer which is in contact with the support, interference due to light reflected from the support surface is prevented. Like

As described above, in the light-receiving layer of the present invention, germanium atoms and / or tin atoms can be evenly distributed in all layers, or can be continuously and unevenly distributed in the layer thickness direction. Hereinafter, some typical examples of a continuous and non-uniform distribution state in the layer thickness direction will be described with reference to FIGS. 7 to 15 by using germanium atoms as an example.

7 to 15, the horizontal axis represents the distribution concentration C of germanium atoms, the vertical axis represents the layer thickness of the photoreceptive layer, t _B represents the position of the end surface of the photoreceptive layer on the support side, and t _T Indicates the position of the end surface on the free surface side opposite to the support side. That is, the photoreceptive layer containing germanium atoms is formed from the t _B side toward the t _T side.

In each figure, if the layer thickness and the concentration are shown as they are, the difference between the figures will not be clear, so they are shown in an extreme form and these figures are for easy understanding. It is a schematic one for explanation.

FIG. 7 shows a first typical example of the distribution state of germanium atoms contained in the light-receiving layer in the layer thickness direction.

In the example shown in FIG. 7, the distribution concentration C of germanium atoms is from the interface position t _B where the support surface on which the light receiving layer containing germanium atoms is formed and the light receiving layer are in contact to the position t _1. There is contained in the light receiving layer notwithstanding et germanium atoms taking a constant value the concentration C ₁ becomes, the more position values t ₁ is gradually reduced continuously up to the position t _T than the concentration C _2. position
At t _T , the distribution concentration C of germanium atoms is substantially zero. (Here, substantially zero means that the amount is less than the detection limit amount).

In the example shown in FIG. 8, the distribution concentration C of contained germanium atoms is from the position t _B to the position t _T.
A distribution state is formed in which the concentration gradually decreases continuously from C ₃ and the concentration becomes C ₄ at the position t _T.

In the case of FIG. 9, from the position t _B to the position t ₂ , the distribution concentration C of germanium atoms is a constant position with the concentration C ₅ ,
between t ₂ and position t _T , gradually and continuously reduced,
At the position t _T , the distribution density C is substantially zero.

In the case of FIG. 10, the distribution concentration C of germanium atoms gradually decreases continuously from the position t _B to the position t _T , starting from the concentration C _{6 and} rapidly decreasing from the position t _3. And is made substantially zero at the position t _T.

In the example shown in FIG. 11, the distribution concentration C of germanium atoms is a constant value C ₇ between position t _B and position t ₄ , and the distribution concentration C is zero at position t _T. To be done. Between the position t ₄ and the position t _T , the distribution concentration C is linearly reduced from the position t ₄ to the position t _T.

In the example shown in FIG. 12, the distribution density C takes a constant value of the density C ₈ from the position t _B to the position t ₅ , and the position from the position t ₅
Up to t _T, the distribution state is such that it decreases linearly from concentration C ₉ to concentration C ₁₀ .

In the example shown in FIG. 13, the distribution concentration C of germanium atoms is linearly reduced from the concentration C ₁₁ and reaches zero from the position t _B to the position t _T.

In FIG. 14, the distribution concentration C of germanium atoms from the position t _B to the position t ₆ is linearly reduced from the concentration C ₁₂ to the concentration C _13, and is between the positions t ₆ and t _T. In, an example in which the concentration C ₁₃ is set to a constant value is shown.

In the example shown in FIG. 15, the distribution concentration C of germanium atoms is the concentration C ₁₄ at the position t _B , and is gradually reduced from this concentration C ₁₄ until reaching the position t ₇ , and t
_In the vicinity of the position ₇ , the concentration is sharply reduced to the concentration C ₁₅ at the position t ₇ .

In between position t ₇ and position t _8, is reduced initially rapidly, then the concentration at the position t ₈ is gradually decreased gradually
It becomes C ₁₆ and is gradually reduced between the positions t ₈ and t ₉ to reach the concentration C ₁₇ at the position t ₉ . Position t ₉ and position t _T
In the range between and, the concentration is decreased according to the curve of the shape as shown in the figure such that the concentration becomes substantially zero than C ₁₇ .

As described above with reference to FIGS. 7 to 15, some of the typical examples of the distribution state of germanium atoms and / or tin atoms contained in the light receiving layer in the layer thickness direction are explained. In the member, on the support side, a portion having a high distribution concentration C of germanium atoms or / and tin atoms,
On the end face t _T side, it is preferable that the light receiving layer is provided with a distribution state of germanium atoms and / or tin atoms having a portion where the distribution concentration C is considerably lower than that on the support side.

That is, the light-receiving layer constituting the light-receiving member in the present invention preferably has a localized region containing a relatively high concentration of germanium atoms and / or tin atoms on the support side as described above. Is desirable.

In the light receiving member of the present invention, the localized region is preferably provided within 5 μm of the interface position t _B , as described with reference to the symbols shown in FIGS. 7 to 15.

The localized region may be the entire layer region up to the thickness of 5 μm from the interface position t _B , or may be a part of the layer region.

Whether the localized region is a part or the whole of the layer region is
It is appropriately determined according to the characteristics required of the formed light receiving layer.

The localized region is a germanium atom contained in it or /
And, the maximum value C max of the distribution concentration of germanium atoms or / and tin atoms as a distribution state in the layer thickness direction of tin atoms is preferably 100 atomic ppm or more, more preferably 5000 atomic ppm or more, with respect to silicon atoms. Optimal 1 x 1
It is desirable to form a layer so that a distribution state of 0 ⁴ atomic ppm or more can be obtained.

That is, in the light-receiving member of the present invention, the light-receiving layer containing germanium atoms and / or tin atoms has a distribution concentration of 5 μm or less (layer region from t _B to 5 μm) within the layer thickness from the support side. It is preferably formed such that there is a maximum value C max.

In the light receiving member of the present invention, the content of the germanium atom or / and the tin atom to be contained in the light receiving layer needs to be appropriately determined as desired so that the object of the present invention can be efficiently achieved, It is usually 1 to 6 × 10 ⁵ atomic ppm, preferably 10 to ³ × 10 ⁵ atomic ppm, more preferably 1 × 10 ² to 2 × 10 ⁵ atomic ppm.

Further, in the light receiving member of the present invention, the layer thickness of the layer of the light receiving layer is one of the important factors for efficiently achieving the object of the present invention, and the desired characteristics of the light receiving member are As described above, it is necessary to pay sufficient attention when designing the light receiving member, and usually 1 to 100 μm, but preferably 1 to 8 μm.
It is 0 μ, more preferably 2 to 50 μ.

The purpose of incorporating at least one selected from oxygen atom, carbon atom and nitrogen atom in the light-receiving layer of the light-receiving member of the present invention is mainly to increase the light sensitivity and dark resistance of the light-receiving member. To improve the adhesion between the support and the light receiving layer.

In the light-receiving layer of the present invention, when at least one selected from oxygen atom, carbon atom and nitrogen atom is contained, it is contained in a uniform distribution state in the layer thickness direction,
Alternatively, whether or not it is contained in a non-uniform distribution state in the layer thickness direction differs depending on the above-mentioned purpose or expected effect, and therefore the amount to be contained also differs.

That is, in the case of aiming at high photosensitivity and high dark resistance of the light receiving member, it is contained in a uniform distribution state in the entire layer region of the light receiving layer, in this case, carbon atoms contained in the light receiving layer, The amount of at least one selected from oxygen atoms and nitrogen atoms may be relatively small.

For the purpose of improving the adhesiveness between the support and the light-receiving layer, it may be uniformly contained in the constituent layer 102 ′ at the end of the light-receiving layer on the support side, or the light-receiving layer may be At the end on the support side, at least one kind selected from carbon atom, oxygen atom, and nitrogen atom is contained in a distributed state such that the distribution concentration is high, and in this case, oxygen atom and carbon contained in the light-receiving layer are contained. The amount of at least one selected from atoms and nitrogen atoms is made relatively large so as to ensure the improvement of the adhesion with the support.

In the light receiving member of the present invention, the amount of at least one selected from oxygen atom, carbon atom and nitrogen atom contained in the light receiving layer is not limited to the above-mentioned properties required for the light receiving layer. In addition, it is determined in consideration of organic relevance such as characteristics at the contact interface with the support, and usually 0.001 to 50 atomic%, preferably
0.002 to 40 atomic%, optimally 0.003 to 30 atomic%.

By the way, when it is contained in the whole layer area of the light-receiving layer, or when the ratio of the layer thickness of a part of the layer area to be contained in the layer thickness of the light-receiving layer is large, the above-mentioned upper limit of the content is included. Is reduced. That is, in that case, for example, the layer thickness of the layer region to be contained is equal to the layer thickness of the light receiving layer.
In case of 2/5, the content is usually 30a.
tomic% or less, preferably 20atomic% or less, optimally 10a
tomic% or less.

Next, at least one amount selected from oxygen atom, carbon atom and nitrogen atom contained in the light receiving layer of the present invention,
A relatively large amount on the support side, decreasing toward the end on the free surface side from the end on the support side, and a relatively small amount near the end on the free surface side of the light receiving layer,
Alternatively, some typical examples in which the distribution is made to be substantially close to zero will be described with reference to FIGS. 16 to 24. However, the invention is not limited by these examples. [Hereinafter, at least one selected from carbon atom, oxygen atom and nitrogen atom is referred to as "atom (O, C,
N) ”. 16 to 24, the horizontal axis represents the distribution concentration C of atoms (O, C, N), the vertical axis represents the layer thickness of the light receiving layer, and t _B represents the thickness of the support and the light receiving layer. The interface position, t _T , represents the position of the end surface on the free surface side of the light-receiving layer.

FIG. 16 shows a first typical example of the distribution state of atoms (O, C, N) contained in the light-receiving layer in the layer thickness direction. In this example, the distribution concentration C of atoms (O, C, N) is C ₁ from the interface position t _B between the photoreceptor layer containing the atoms (O, C, N) and the support to the position t _1. It takes a constant value, the position t ₁ from the free surface side end surface position t _T to the atom (O, C, N) distribution concentration C of continuously decreases from the concentration C _2, atoms in position t _T (O, The distribution concentration of (C, N) is C ₃ .

In another typical example shown in FIG. 17, the distribution concentration C of atoms (O, C, N) contained in the light-receiving layer varies from the position t _B to the position t.
_It continuously decreases from the concentration C ₄ until reaching _T, and reaches the concentration C ₅ at the position t _T.

In the example shown in FIG. 18, from the position t _B to the position t ₂ atoms (O,
C, N) distribution density C keeps a constant value of density C ₆ , and at position t ₂
From the position C to the position t _T , the distribution concentration C of the atom (O, C, N) gradually and continuously decreases from the concentration C _7, and the distribution concentration of the atom (O, C, N) at the position t _T. C is substantially zero.

In the example shown in FIG. 19, atoms (O, C, N) until the distribution concentration C of the lead to the position t _T to the position t _B, gradually decreases from the concentration C ₈ continuously atom in position t _T The distribution concentration C of (O, C, N) becomes substantially zero.

In the example shown in FIG. 20, the distribution concentration C of atoms (O, C, N) is
From the position t _B to the position t ₃ , the concentration C _{9 is} a constant value, and between the position t ₃ and the position t _T , the concentration C ₉ to the concentration C _9.
It decreases linearly until it reaches C ₁₀ .

In the example shown in FIG. 21, the distribution concentration C of atoms (O, C, N) is
The concentration C ₁₁ is constant from the position t _B to the position t ₄ , and the concentration C ₁₂ to the concentration C is from the position t ₄ to the position t _T.
It temporarily decreases until it reaches ₁₃ .

In the example shown in FIG. 22, the distribution concentration C of atoms (O, C, N) decreases linearly from the position t _B to the position t _T and from the concentration C ₁₄ to substantially zero. To do.

In the example shown in FIG. 23, the distribution concentration C of atoms (O, C, N) is
It decreases linearly from the position t _B to the position t ₅ until it reaches the concentration C ₁₅ to the concentration C _16, and maintains a constant value of the concentration C ₁₆ from the position t ₅ to the position t _T.

Finally, in the example shown in FIG. 24, the distribution concentration C of the atoms (O, C, N) is the concentration C ₁₇ at position t _B, from the position t _B to the position t _6, starting from the concentration C ₁₇ Is less and less
In the vicinity of the position t ₆ is rapidly reduced, a position t ₆ the density C _18. Then decreases from position t ₆ position to t ₇ is sharply at first, then decreases gradually or gently, the concentration C ₁₉ in the position t _7. Furthermore gradually decreases extremely boiled made in between positions t ₇ and position t _8, the concentration C ₂₀ at position t _8. Furthermore, from the position t ₈ to the position t _T , the concentration C ₂₀ gradually decreases until it becomes substantially zero.

As in the example shown in FIGS. 16 to 24, a portion having a high concentration concentration C of atoms (O, C, N) is provided at the end of the photoreceptor layer on the side of the support, and the edge of the photoreceptor layer on the free surface side is high. In the part, when the distribution concentration C has a portion where the distribution concentration C is considerably low, or when it has a concentration portion substantially close to zero, the atoms (O, C, N By providing a localized region having a relatively high distribution concentration of), preferably the localized region is provided within 5 μm from the interface position t _B between the surface of the support and the light receiving layer, The improvement of the adhesiveness with the receiving layer can be achieved more effectively.

The localized region may be the whole or a part of the partial layer region at the support side end of the photoreceptor layer containing the atoms (O, C, N), whichever is selected. Is appropriately determined according to the characteristics required of the formed light receiving layer.

The amount of atoms (O, C, N) contained in the localized region is such that the maximum value of the molecular concentration C of atoms (O, C, N) is 500 atomic ppm or more,
Preferably 800 atomic ppm or higher, optimally 1000 atomic pp
It is desirable that the distribution state be m or more.

Further, in the light receiving member of the present invention, a substance for controlling conductivity may be contained in the light receiving layer in the entire layer region or a part of the layer region in a uniform or non-uniform distribution state, if necessary.

Examples of the substance that controls the conductivity include so-called impurities in the field of semiconductors, and an atom belonging to Group III of the periodic table that gives P-type conductivity (hereinafter simply referred to as “I
Group II atom ”. ), Or an atom belonging to Group V of the periodic table that gives n-type conductivity (hereinafter simply referred to as “Group V atom”). Specific examples of the group III atom include B (boron), Al (aluminum), Ga (gallium), In (indium), and Tl (thallium), but the particularly preferable one is B. , Ga. Examples of the Group V atom include P (phosphorus), As (arsenic), Sb (antimony), Bi (bisman), and the like, with P and Sb being particularly preferable.

The light-receiving layer of the present invention, which is a substance for controlling conductivity, III
When a group atom or a group V atom is contained, whether it is contained in the whole layer region or a part of the layer region is different depending on the intended place or expected action and effect as described later, The amount to be contained also differs.

That is, when the main purpose is to control the conductivity type and / or the conductivity of the light-receiving layer, it should be contained in the entire region of the light-receiving layer. In this case, a group III atom or a group V atom The content of may be relatively small, usually 1 × 10 ^-3 ~
1 × 10 ³ atomic ppm, preferably 5 × 10 ^{−2 to} 5 × 1
0 ² atomic ppm, optimally 1 × 10 ^-1 to 2 × 10 ² atomic ppm
Is.

In addition, a group III atom or a group V atom is contained in the constituent layer 102 'in contact with the support in a uniform distribution state, or the distribution concentration of the group III atom or the group V atom in the layer thickness direction is In the case where it is contained so that the concentration is high on the side in contact with the support, such Group III atoms or V
Constituent layer containing a group atom (constituent layer 10 in FIG.
The layer region containing 2 ') or a group III atom or a group V atom at a high concentration functions as a charge injection blocking layer. That is, when a Group III atom is contained,
When the free surface of the light-receptive layer is charged with polarity,
The transfer of electrons injected from the support side into the light-receiving layer can be blocked more efficiently, and when a group V atom is contained, the free surface of the light-receiving layer is charged with polarity. When it is received, the movement of holes injected from the support side into the light receiving layer can be more effectively prevented. The content in such a case is relatively large, specifically, 30 to 5 × 10 ⁴ atomic ppm, preferably 50 to 1 × 1.
0 ⁴ atomic ppm, and optimally between ^{1 × 10 2 ~5 × 10 3} atomic ppm. Further, in order to efficiently exert the effect as the charge injection blocking layer, the layer thickness of the layer or layer region provided at the end portion on the support side containing the group III atom or the group V atom is set to t, When the layer thickness of the light-receiving layer is T, it is desirable that the relationship of t / T <0.4 is satisfied. More preferably, the value of the relational expression should be 0.35 or less, and optimally 0.3 or less. desirable. The layer thickness t of the layer or layer region is generally 3 × 10 ^{−3 to} 10 μ, but preferably 4 × 10 ⁻³ to 8 μm.
μ, optimally 5 × 10 ^{−3 to} 5 μ.

The amount of the group III atom or the group V atom contained in the light receiving layer is relatively large on the support side and decreases from the support side to the side having the free surface, and the free surface of the light receiving layer is reduced. A typical example of the case where the group III atom or the group V atom is distributed in a relatively small amount or close to zero in the vicinity is as follows. 16th to 24th exemplified when containing at least one of atom or nitrogen atom
It can be explained by means of examples similar to those in the figures, but the invention is not limited by these examples.

Then, as in the examples shown in FIGS. 16 to 24, the portion of the light receiving layer having a high concentration concentration C of the group III atom or the group V atom is provided on the side of the light receiving layer near the support side. On the free surface side, in the case where the distribution concentration C has a considerably low concentration portion or a concentration portion substantially close to zero, in the portion close to the support side, a group III atom or a group V atom By providing a localized region having a relatively high concentration of distribution, preferably by providing the localized region within 5 μm from the interface position in contact with the surface of the support, the distribution of group III atoms or group V atoms The above-described effect that the layer region having a high concentration forms the charge injection blocking layer is more efficiently exhibited.

As described above, the action and effect of each of the distribution states of the group III atoms or the group V atoms have been described individually. For obtaining the light receiving member having the characteristics capable of achieving the desired purpose,
The distribution state of these Group III atoms or Group V atoms and the amounts of Group III atoms or Group V atoms to be contained in the light-receiving layer are appropriately combined and used.

For example, when a charge injection blocking layer is provided at the end of the light receiving layer on the side of the support, the charge injection blocking layer is formed on the light receiving layer (102 ″ in FIG. 1) other than the charge injection blocking layer (102 ″ in FIG. 1). A conductivity controlling substance having a polarity different from the polarity of the contained conductivity controlling substance may be contained, or a substance having the same polarity controlling conductivity may be contained in the charge injection blocking layer. It may be contained in a much smaller amount than that.

Furthermore, in the light receiving member of the present invention, as the constituent layer provided at the end portion on the support side, instead of the charge injection blocking layer,
A so-called barrier layer made of an electrically insulating material may be provided, or both the barrier layer and the charge injection blocking layer may be constituent layers. Examples of the material forming the barrier layer include inorganic electrically insulating materials such as Al ₂ O ₃ , SiO ₂ , and Si ₃ N _4, and organic electrically insulating materials such as polycarbonate.

Since the light-receiving member of the present invention has the layer structure as described above, all the problems of the light-receiving member having the multilayer light-receiving layer composed of amorphous silicon can be solved, and Even when laser light, which is coherent monochromatic light, is used as a light source, it is possible to remarkably prevent the appearance of an interference fringe pattern in a formed image due to an interference phenomenon, and to form an extremely high-quality visible image.

Further, the light-receiving member of the present invention has a high photosensitivity in the entire visible light region, and is particularly excellent in photosensitivity characteristics on the long wavelength side. It exhibits high electrical properties, excellent electrical, optical and photoconductive properties, electrical withstand voltage and use environment characteristics.

In particular, when it is applied as a photoreceptive member for electrophotography, it has no influence of residual potential on image formation, its electrical characteristics are stable, high sensitivity, and high SN ratio. Therefore, it is possible to stably and repeatedly obtain a high-quality image having excellent light fatigue resistance, repeated use characteristics, high density, clear halftone, and high resolution.

Next, a method for forming the light receiving layer of the present invention will be described.

Any of the amorphous materials forming the light receiving layer of the present invention is formed by a vacuum deposition method utilizing a discharge phenomenon such as a glow discharge method, a sputtering method, or an ion plating method. These manufacturing methods are appropriately selected and adopted depending on factors such as manufacturing conditions, load level of capital investment, manufacturing scale, and characteristics desired for the light receiving member to be manufactured. Since it is relatively easy to control the conditions for producing the light receiving member having, and the carbon atom and the hydrogen atom can be easily introduced together with the silicon atom, the glow discharge method or the sputtering method is used. It is suitable. Then, the glow discharge method and the sputtering method may be used together in the same apparatus system.

In order to form a light-receiving layer composed of a-SiGe (H, X) by the glow discharge method, a source gas for supplying Si, which can supply silicon atoms (Si), and a germanium atom (Ge), are used. Source gas for Ge supply that can be supplied and hydrogen atom (H) or /
And a hydrogen atom (H) capable of supplying a halogen atom (X) or / and a source gas for supplying a halogen atom (X) are introduced into a deposition chamber capable of reducing the pressure in a desired gas pressure state,
A glow discharge is generated in the deposition chamber, and a-SiGe (H,
X) to form a layer.

The substance that can be the source gas for supplying Si is Si.
_{H 4, Si 2 H 6,} Si 3 H 8, Si 4 H hydrogenation may or gasified gas state such as ₁₀ silicon (silanes). In particular, the layer forming operation when ease of handling, Si supply In terms of efficiency, Si
H ₄ and Si ₂ H ₆ are preferred.

Further, as the substance that can be the raw material gas for supplying Ge, GeH ₄ , Ge ₂ H ₆ , Ge ₃ H ₈ , Ge ₄ H ₁₀ , Ge ₅ H ₁₂ , Ge ₆ H ₁₄ , Ge
It is possible to use germanium hydride in a gas state or gasifiable such as ₇ H ₁₆ , Ge ₈ H ₁₈ , and Ge ₉ H ₂₀ . In particular, from the viewpoint of ease of handling during layer creation work, good Ge supply efficiency, etc.
GeH ₄ , Ge ₂ H ₆ , and Ge ₃ H ₈ are preferred.

Further, there are many halogen compounds as the substances that can be the raw material gas for supplying the halogen atoms, and for example, halogen gas, halides, interhalogen compounds, silane derivatives substituted with halogen, or the like in a gas state or gasifiable. A halogen compound can be used. Specifically, fluorine, chlorine, bromine, iodine halogen gas, Br
F, ClF, ClF ₃ , BrF ₃ , BrF ₅ , IF ₃ , IF ₇ , interhalogen compounds such as ICl, IBr, and halogenated silicon compounds such as SiF ₄ , Si ₂ F ₆ , SiCl ₄ , SiBr ₄ are preferable. It is mentioned as a thing.

In the case where a silicon compound containing a halogen atom as described above in a gas state or a gasifiable substance is formed by a glow discharge method as a raw material gas, without using a silicon hydride gas as a raw material gas for supplying Si atoms. It is particularly effective because a layer composed of a-Si containing a halogen atom can be formed on a predetermined support.

When the light-receiving layer is formed using the glow discharge method, basically, a silicon halide and a raw material gas for supplying Si are used.
Germanium hydride as a raw material for supplying Ge and Ar, H ₂ , and He
A gas such as the above is introduced into the deposition chamber at a predetermined mixing ratio and gas flow rate, and a glow discharge is generated to form a plasma atmosphere of these gases, thereby forming a light receiving layer on the support. In order to make it easier to control the content of hydrogen atoms (H), which is very effective in controlling electrical or photoelectric properties, it is necessary to add hydrogen to these gases. It is also possible to mix a raw material gas for supplying atoms. As the gas for supplying hydrogen atoms, hydrogen gas or silicon hydride gas such as SiH ₄ , Si ₂ H ₆ , Si ₃ H ₈ and Si ₄ H ₁₀ is used. Further, as a gas for supplying hydrogen atoms, halides such as HF, HCl, HBr, HI, SiH ₂ F ₂ , SiH ₂
In the case of using a halogen-substituted silicon hydride such as I ₂ , SiH ₂ Cl ₂ , SiHCl ₃ , SiH ₂ Br ₂ , SiHBr ₃ or the like in a gas state or gasifiable, introduction of a halogen atom (X) At the same time, a hydrogen atom (H) is also introduced, which is effective.

In order to form a light-receiving layer composed of a-SiGe (H, X) by the sputtering method, two targets, a target made of silicon and a target made of germanium, or a target made of silicon and germanium are used. And are sputtered in a desired gas atmosphere.

When the light receiving layer is formed by using the ion plating method, for example, polycrystalline silicon or single crystal silicon and polycrystalline germanium or single crystal germanium are housed in a vapor deposition boat as evaporation sources, and this evaporation source is It can be carried out by heating and evaporating by a resistance heating method, an electron beam method (EB method), or the like, and passing the flying evaporate in a desired gas plasma atmosphere.

In both cases of the sputtering method and the ion plating method, in order to allow the halogen atom to be contained in the layer to be formed, a gas of the above-mentioned halide or a silicon compound containing the halogen atom is introduced into the deposition chamber, and the gas is introduced. The plasma atmosphere may be formed. When hydrogen atoms are introduced, a raw material gas for supplying hydrogen atoms, for example, H ₂ or the above-mentioned hydrogenated silanes or / and gases such as germanium hydride are introduced into the deposition chamber for spattering. It suffices to form a plasma atmosphere of gases such as. Yet source gas for supplying halogen atoms, said although halide or silicon compounds containing halogens are mentioned as valid, Other, HF, HCl, HBr, hydrogen halides or HI, SiH ₂ F ₂ , SiH ₂ I ₂ , SiH ₂ Cl ₂ , SiHCl ₃ , S
iH ₂ Br ₂ , halogen-substituted silicon hydrides such as SiHBr ₃ , and Ge
HF ₃ , GeH ₂ F ₂ , GeH ₃ F, GeHCl ₃ , GeH ₂ Cl ₂ , GeH ₃ Cl, GeHBr
₃ , GeH ₂ Br ₂ , GeH ₃ Br, GeHI ₃ , GeH ₂ I ₂ , GeH ₃ I, etc.Hydrogen halide germanium, etc., GeF ₄ , GeCl ₄ , GeBr ₄ , Ge
Gaseous or gasifiable substances such as germanium halides such as I ₄ , GeF ₂ , GeCl ₂ , GeBr ₂ , GeI _2, etc. can also be used as effective starting materials.

In a preferred example of the present invention, the amount of hydrogen atoms (H) or halogen atoms (X) contained in the formed light-receiving layer.
Of hydrogen or the amount of hydrogen and halogen atoms (H + X)
Is preferably 0.01 to 10 atomic%, more preferably 0.05.
-30 atomic%, optimally 0.1-2.5 atomic% is desirable.

Amorphous silicon containing tin atoms (hereinafter referred to as "a-SiSn (H, X)") by using a glow discharge method, a sputtering method, or an ion plating method.
In order to form a light receiving layer composed of
When forming a layer composed of (H, X), the starting material for supplying germanium atoms is used in place of the starting material for supplying tin atoms (Sn), and the amount thereof in the layer to be formed is changed. It is carried out by containing it while controlling it.

The substances that can be the source gas for supplying the tin atom (Sn) include tin hydride (SnH ₄ ), SnF ₂ , SnF ₄ , SnCl ₂ and SnC.
_{l 4, SnBr 2, SnBr 4} , SnBr 4, SnI 2, can be used as it can SnI or gasified gas state such as tin halide, such as _4, in the case of using the tin halide is predetermined support It is particularly effective because a layer composed of a-Si containing a halogen atom can be formed on the body. Of these, SnCl ₄ is preferable from the viewpoints of ease of handling during layer formation work and good Sn supply efficiency.

When SnCl ₄ is used as a starting material for supplying tin atoms (Sn), solid SnCl ₄ can be used for gasification.
It is desirable to boil an inert gas such as Ar and He while heating and bubbling using the inert gas.The gas thus generated is introduced into the deposition chamber whose inside pressure is reduced in a desired gas pressure state. To do.

Using the glow discharge method, a-SiGe (H, containing at least one selected from oxygen atom, carbon atom, and nitrogen atom)
X), a-SiSn (H, X) or a-SiGeSn (H, X) or a part of the layer region is formed by the above-mentioned a-Si.
When forming a layer composed of Ge (H, X) or / and a-SiSn (H, X), the starting material for introducing atoms (O, C, N) is a-S
By using with iGe (H, X) or / and a-SiSn (H, X) forming starting materials to control their inclusion in the layers to be formed.

As a starting material for introducing such an atom (O, C, N),
Almost any substance can be used as long as it is a gaseous substance or a substance that can be gasified and has at least atoms (O, C, N) as constituent atoms.

Specifically, as a starting material for introducing an oxygen atom (O), for example, oxygen (O ₂ ), ozone (O ₃ ), nitric oxide (NO), nitrogen dioxide (NO ₂ ), nitrogen monoxide (N _2). O), nitrogen dioxide (N
₂ O ₃ ), nitrogen tetraoxide (N ₂ O ₄ ), nitrogen pentaoxide (N ₂ O ₅ ), nitric oxide (NO ₃ ), silicon atom (Si) and oxygen atom (O) and hydrogen atom (H) And are constituent atoms. Examples thereof include lower siloxanes such as disiloxane (H ₃ SiOSiH ₃ ), trisiloxane (H ₃ SiOSiH ₂ OSiH ₃ ), and the like. As a starting material for introducing a carbon atom (C), for example, methane (CH ₄ ) , Ethane (C ₂
H _6), propane (C ₃ H _8), n- butane (nC ₄ H _10), pentane
Saturated hydrocarbon having 1 to 5 carbon atoms such as (C ₅ H ₁₂ ), ethylene (C ₂
H ₄ ), propylene (C ₃ H ₆ ), butene-1 (C ₄ H ₈ ), butene-2 (C ₄
H ₈ ), isobutylene (C ₄ H ₈ ), pentene (C ₅ H ₁₀ ), etc., ethylene hydrocarbons having 2 to 5 carbon atoms, acetylene (C ₂ H ₂ ), methylacetylene (C ₃ H ₄ ), butyne (C ₄ H ₆₎ acetylenic hydrocarbons having 2 to 4 carbon atoms. Examples of the starting material of the nitrogen atoms (N) for introducing, for example, nitrogen (N _2), ammonia (NH _3), Hydrazine (H ₂ NNH ₂ ), hydrogen azide (NH ₃ ), ammonium azide (NH ₄ N ₃ ), nitrogen trifluoride (F ₃ N), nitrogen tetrafluoride
(F ₄ N) and the like.

Moreover, a-SiGe (H, X), a-SiSn (H, X) or a-SiGe containing atoms (O, C, N) is formed by using the sputtering method.
When forming a layer composed of Sn (H, X), the starting materials for introducing atoms (O, C, N) are the above-mentioned gasifiable starting materials listed in the glow discharge method. Besides, SiO ₂ , Si ₃ N ₄ , carbon black and the like can be cited as solidified starting materials. These can be used together with a target such as Si in the form of a target for spattering.

It is composed of a-SiGe (H, X) or / and a-SiSn (H, X) containing a group III atom or a group V atom by using a glow discharge method, a sputtering method or an ion plating method. To form a layer or part of the layer area,
-SiGe (H, X) or / and a-SiSn (H, X) at the time of forming a layer, a starting material for introducing a Group III atom or a Group V atom is a-SiGe (H , X) or / and a-SiSn (H,
X) by using together with the starting materials for the formation and their controlled inclusion in the layers to be formed.

Specifically as a starting material for introducing a group III atom, for introducing a boron atom, B ₂ H ₆ , B ₄ H ₁₀ , B ₅ H ₉ , B ₅ H ₁₁ , B
_{6 H 10, B 6 H 12} , B 10 H 14 borohydride such _{as, BF 3, BCl 3, BBr} 3
And the like. In addition to this, AlCl ₃ , C
Other examples include aCl ₃ , Ga (CH ₃ ) ₃ , InCl ₃ and TlCl ₃ .

As a starting material for introducing a Group V atom, specifically, a phosphorus hydride such as PH ₃ , P ₂ H ₆ or the like for introducing a phosphorus atom, PH ₄ I, PF ₃ , PF
Examples thereof include phosphorus halides such as ₅ , PCl ₃ , PCl ₅ , PBr ₃ , PBr ₅ , and PI ₃ . In addition, AsH ₃ , AsF ₃ , AsCl ₃ , AsBr ₃ , AsF ₅ ,
SbH ₃ , SbF ₃ , SbF ₅ , SbCl ₃ , SbCl ₅ , BiH ₃ , BiCl ₃ , BiBr ₃
Etc. can also be mentioned as effective starting materials for introducing a Group V atom.

As described above, the light-receiving layer of the light-receiving layer of the light-receiving member of the present invention is formed using a glow discharge method, a sputtering method, or the like, but a germanium atom or / and a tin atom contained in the light-receiving layer, The control of the content of each of oxygen atom, carbon atom or nitrogen atom, or group III atom or group V atom, or further hydrogen atom and / or halogen atom is performed by starting the supply of each atom into the deposition chamber. This is done by controlling the gas flow rate of the substance or the gas flow rate ratio between the starting materials for supplying each atom.

In addition, conditions such as the temperature of the support at the time of forming the light receiving layer, the gas pressure in the deposition chamber, and the discharge power are important factors for obtaining a light receiving member having desired characteristics, and the function of the layer to be formed is It will be appropriately selected taking into consideration. Furthermore, since the conditions for forming these layers may differ depending on the type and amount of each of the above-mentioned atoms contained in the light-receiving layer, it is determined by taking into consideration the type of the contained atoms or the amount thereof. You also need to do it.

Specifically, a-SiGe containing atoms (O, C, N)
When forming a layer consisting of (H, X), or by atoms (O,
C, N) and a layer made of a-SiGe (H, X) containing a group III atom or a group V atom, the support temperature is usually 50 to 350 ° C. The temperature is more preferably 50 to 300 ° C, and particularly preferably 100 to 300 ° C.
The gas pressure in the deposition chamber is usually 0.01 to 5 Torr, preferably 0.001 to 3 Torr, particularly preferably 0.1 to 1 Torr.
Torr. The discharge power is usually that a 0.005~50W / cm ^2, preferably 0.01~30W / cm ^2, particularly preferably at 0.01~20W / cm ^2.

However, the specific conditions of the temperature of the support, the discharge power, and the gas pressure in the deposition chamber for forming layers are usually difficult to determine individually.
Therefore, in order to form an amorphous material layer with desired characteristics,
It is desirable to determine the optimum conditions for layer formation based on mutual and organic relationships.

By the way, the distribution state of the germanium atom or / and the tin atom, the atom (O, C, N), the group III atom or the group V atom, or the hydrogen atom or / and the halogen atom contained in the light receiving layer of the present invention is In order to make it uniform, it is necessary to keep the above conditions constant when forming the light-receiving layer.

Further, in the present invention, when the light-receiving layer is formed, a germanium atom or a tin atom contained in the layer, an atom (O,
(C, N) or a glow discharge method is used to form a light-receiving layer having a desired distribution state in the layer thickness direction by changing the distribution concentration of group III atoms or group V atoms in the layer thickness direction. If so, the gas flow rate when introducing a germanium atom or / and a tin atom, an atom (O, C, N), or a starting material gas for introducing a group III atom or a group V atom into the deposition chamber is It is formed by appropriately changing it according to a desired change rate and keeping other conditions constant. Then, in order to change the gas flow rate, concretely, for example, manually or by some commonly used method such as an external drive motor, the opening of a predetermined needle valve provided in the middle of the gas flow path system is gradually increased. It suffices to perform an operation to change. At this time, the rate of change of the flow rate does not have to be linear, and it is possible to obtain a desired content rate curve by controlling the flow rate according to a previously designed rate-of-change curve using, for example, a microcomputer.

When the photoreceptive layer is formed by the sputtering method, germanium atoms or tin atoms, atoms (O, C, N),
Alternatively, in order to form a desired distribution state in the layer thickness direction by changing the distribution concentration in the layer thickness direction of the group III atoms or the group V atoms, as in the case of using the glow discharge method,
A starting material for introducing a germanium atom or a tin atom, an atom (O, C, N) or a group III atom or a group V atom is used in a gas state, and a gas flow rate when introducing the gas into the deposition chamber is desired. Change according to the rate of change of.

〔Example〕

Hereinafter, the present invention will be described in more detail with reference to Examples 1 to 15, but the present invention is not limited thereto.

In each of the examples, the light receiving layer was formed using the glow discharge method. FIG. 25 shows an apparatus for manufacturing the light receiving member of the present invention by the glow discharge method.

In the gas cylinders 2502, 2503, 2504, 2505, 2506 in the figure, the raw material gas for forming each layer of the present invention is sealed, and as an example thereof, for example, 2502 is SiF ₄ gas (purity 99.999%. ) Cylinder, 2503 is GeF ₄ gas (purity 99.999
%) Cylinder, 2504 is CH ₄ gas (purity 99.999%) cylinder, 2
505 is B ₂ H ₆ gas diluted with H ₂ (purity 99.999%, hereinafter B ₂ H
Abbreviated as ₆ / H ₂ . ) Is a cylinder, 2506 is an inert gas He gas cylinder, and 2506 'is a sealed container containing SnCl ₄ .

A gas cylinder is required to allow these gases to flow into the reaction chamber 2501.
Make sure that valves 2522 to 2526 and leak valves 2535 of 2502 to 2506 are closed, and inflow valves 2512 to 2516,
After confirming that the outflow valves 2517 to 2521 and the auxiliary valves 2532 and 2533 are opened, the main valve 2534 is first opened to exhaust the reaction chamber 2501 and the gas pipe. Next, when the reading of the vacuum gauge 2536 reaches about 5 × 10 ^-6 torr, the auxiliary valve 253
2, 2533, close outflow valves 2517-2521.

An example of forming the light receiving layer 102 on the Al cylinder 2537 will be described below.

First, SiF ₄ gas from gas cylinder 2502, GeF ₄ gas from gas cylinder 2503, CH ₄ gas from gas cylinder 2504, gas cylinder 2
Valves 2522, 2523, 252 for each of B ₂ H ₆ / H ₂ gas from 505
4, 2525 open and outlet pressure gauge 2527, 2528, 2529, 2530
Adjust the pressure to 1Kg / cm ² and adjust the inflow valves 2512, 2513, 251
Gradually open 4, 2515, mass flow controller 2507, 2
Inflow into 508, 2509, 2510. Subsequently, the outflow valves 2517, 2518, 2519, 2520 and the auxiliary valve 2532 are gradually opened to allow the gas to flow into the reaction chamber 2501. SiF _{4 at} this time
Flow valves 2517, 251 so that the ratio of gas outflow, GeF ₄ gas flow rate, CH ₄ gas flow rate, B ₂ H ₆ / H ₂ gas flow rate becomes a desired value.
8, 2519, 2520 are adjusted, and the opening of the main valve 2534 is adjusted while observing the reading of the vacuum gauge 2536 so that the pressure in the reaction chamber 2501 becomes a desired value. And base cylinder 25
After it was confirmed that the temperature of 37 was set to a temperature in the range of 50 to 400 ° C. by the heater 2538, the power supply 2540 was set to the desired power to cause the glow discharge in the reaction chamber 2501, and Using a micro computer (not shown), controlling the flow rates of SiF ₄ gas, GeF ₄ gas, CH ₄ gas, and B ₂ H ₆ / H ₂ gas according to a predesigned rate-of-change line, A light receiving layer is formed on the cylinder 2537.

When hydrogen atoms are contained in the light receiving layer, H ₂ gas may be further added to the above gas and sent into the reaction chamber.

It goes without saying that all the outflow valves other than the gas outflow valves necessary for forming the respective layers are closed.

In addition, in the case of containing tin atoms in the light-receiving layer, when a gas starting from SnCl ₄ is used as a source gas, the solid SnCl ₄ contained in 2506 ′ is heated by a heating means (not shown). No. ₂ ) is used, and an inert gas such as Ar or He is blown into the SnCl ₄ from an inert gas cylinder 2506 such as Ar or He for bubbling. The generated SnCl ₄ gas is caused to flow into the reaction chamber by the same procedure as the above-mentioned SiF ₄ gas, GeF ₄ gas, B ₂ H ₆ / H ₂ gas and the like.

Test Example Using a SUS stainless steel true sphere with a diameter of 2 mm, the surface of an aluminum alloy cylinder (diameter 60 mm, length 298 mm) was treated using the apparatus shown in FIG. 6 to form irregularities.

The relationship between the radius R'of the true sphere, the drop height h, the radius of curvature R of the dent dent, and the width D was found to be that the radius of curvature R and the width D of the dent is the vacuum radius R'and the drop height. It was confirmed that it was determined by conditions such as h. In addition, it was confirmed that the pitch of the trace pits (density of trace pits and pitch of irregularities) can be adjusted to the desired pitch by controlling the rotation speed of the cylinder, the number of revolutions, or the drop amount of the rigid spherical body. Was done.

Example 1 The surface of an aluminum alloy cylinder was treated in the same manner as in the test example, and D shown in the upper column of Table 1A, and Cylindrical Al support with cylinders (cylinder No. 101-10
6) got.

Next, a light receiving layer was formed on the Al support (cylinder Nos. 101 to 106) under the conditions shown in Table 1B below by the manufacturing apparatus shown in FIG. The boron atom contained in the light-receiving layer was B ₂ H ₆ / SiF ₄ + GeF ₄ ≈100 ppm, and it was introduced as much as about 200 ppm in all the layers.

These light receiving members were subjected to image exposure by irradiating a laser beam having a wavelength of 780 nm and a spot diameter of 80 μm using the image exposure apparatus shown in FIG. 26, and developed and transferred to obtain an image. The appearance of interference fringes in the obtained image is as shown in the lower column of Table 1A.

Note that FIG. 26 (A) is a schematic plan view schematically showing the entire exposure apparatus, and FIG. 26 (B) is a schematic side view schematically showing the entire exposure apparatus. In the figure, 2601 is a light receiving member, 2602
Is a semiconductor laser, 2603 is an fθ lens, and 2604 is a polygon mirror.

Next, for comparison, a cylinder made of aluminum alloy (diameter 60 mm, surface-treated with a conventional diamond bite,
Using a length of 298 mm, an uneven pitch of 100 μm, and an uneven depth of 3 μm, a light receiving member was produced in the same manner as described above. When the obtained light receiving member was observed with an electron microscope, the surface of the support was parallel to the layer interface of the light receiving layer and the surface of the light receiving layer. An image was formed in the same manner as described above using this light receiving member, and the obtained image was evaluated in the same manner as described above. The results are shown in the lower column of Table 1A.

Example 2 A light-receiving layer was formed on an Al support (cylinder Nos. 101 to 107) in the same manner as in Example 1 except that the light-receiving layer was formed according to the layer forming conditions shown in Table 2B. .

An image was formed on the obtained light-receiving member in the same manner as in Example 1. As a result, the occurrence of interference fringes in the obtained image was as shown in the lower column of Table 2A.

Examples 3 to 15 On the Al support (cylinder No. 103 to 106) of Example 1,
A light receiving member was prepared in the same manner as in Example 1 except that the light receiving layer was formed according to the layer forming conditions shown in Tables 3 to 15.

In addition, in Examples 3 to 6 and 8 to 14, the flow rates of the used gases at the time of forming the light receiving layer were 27th to 30th and 31st to 37th, respectively.
According to the flow rate change line shown in the figure, it was automatically adjusted by the micro computer control.

In addition, the boron atom contained in the light receiving layer is the same as in Example 1.
It was introduced under the same conditions as.

An image was formed on the obtained light receiving member in the same manner as in Example 1.

In each of the obtained images, no occurrence of interference fringes was observed,
It was of very good quality.

[Outline of Effects of the Invention] The light-receiving member of the present invention has the above-mentioned layer structure, whereby all the problems of the light-receiving member having the light-receiving layer composed of amorphous silicon can be solved. In particular, even when a laser light which is a coherent monochromatic light is used as a light source, it is possible to remarkably prevent the appearance of an interference fringe pattern in a formed image due to an interference phenomenon and form a very high quality visible image. it can.

Further, the light-receiving member of the present invention has a high photosensitivity in the entire visible light region, and is particularly excellent in the photosensitivity characteristic on the long wavelength side, so that it is particularly excellent in matching with a semiconductor laser, and has an optical response. It exhibits high electrical properties, excellent electrical, optical and photoconductive properties, electrical withstand voltage and use environment characteristics.

In particular, when it is applied as a photoreceptive member for electrophotography, it has no influence of residual potential on image formation, its electrical characteristics are stable, high sensitivity, and high SN ratio. Therefore, it is possible to stably and repeatedly obtain a high-quality image having excellent light fatigue resistance, repeated use characteristics, high density, clear halftone, and high resolution.

[Brief description of drawings]

FIG. 1 is a diagram schematically showing an example of the light receiving member of the present invention, and FIGS. 2 and 3 are for explaining the principle of preventing the generation of interference fringes in the light receiving member of the present invention. FIG. 2 is a partially enlarged view, FIG. 2 is a view showing that interference fringes can be prevented from being generated in a light receiving member in which irregularities due to spherical trace depressions are formed on the surface of a support, and FIG. 3 is a conventional surface. FIG. 6 is a diagram showing that interference fringes are generated in a light receiving member in which a light receiving layer is deposited on a support which is regularly roughened. FIGS. 4 and 5 are schematic diagrams for explaining the uneven shape of the surface of the support of the light receiving member of the present invention and a method for producing the uneven shape. FIG. 6 is a diagram schematically showing one structural example of an apparatus suitable for forming the uneven shape provided on the support of the light receiving member of the present invention, and FIG. 6 (A) is a front view. , Sixth
(B) is a vertical sectional view. 7 to 15 are diagrams showing the distribution state of germanium atoms or tin atoms in the layer thickness direction in the light receiving layer of the present invention, and FIGS. 16 to 24 are oxygen atoms and carbon in the light receiving layer of the present invention. Atoms and nitrogen atoms,
FIG. 3 is a diagram showing the distribution state of group III atoms or group V atoms in the layer thickness direction, in each of which the vertical axis represents the layer thickness of the light-receiving layer and the horizontal axis represents the distribution concentration of each atom. There is. FIG. 25 is an example of an apparatus for producing the light receiving layer of the light receiving member of the present invention, and is a schematic explanatory view of a production apparatus by a glow discharge method. FIG. 26 is a diagram for explaining an image exposure device using laser light. FIGS. 27 to 37 are views showing changes in the gas flow rate ratio in the formation of the light receiving layer of the present invention, in which the vertical axis represents the layer thickness of the light receiving layer and the horizontal axis represents the gas flow rate of the used gas. 1 to 3, 100 ... Light receiving member, 101 ... Support, 102 ... Light receiving layer, 102 ', 201, 301 ... First layer, 102 ", 202, 302 ... Second layer, 103,203,303 …… Free surface, 204,304 …… The interface between the first layer and the second layer About the fourth and fifth figures, 401,501 …… Support, 402,502 …… Support surface, 403,503,
503 '…… Rigid spherical body, 404,504 …… Spherical depression About Fig. 601 …… Cylinder, 602 …… Rotary axis, 603 …… Drive means, 604 …… Drop device, 605 …… Rigid spherical body, 606 …… Ball feeder, 607 ... Vibrator, 608 ... Recovery tank, 609 ...
… Ball feed device, 610 …… Cleaning device, 611 …… Cleaning liquid reservoir, 612 …… Cleaning liquid collection tank, 613 …… Drop port 2501 …… Reaction chamber, 2502 to 2506 …… Gas cylinder, 2506 ′…
… SnCl ₄ tank, 2507 to 2511 …… Mass flow controller, 251
2 to 2516 …… Inflow valve, 2517 to 2521 …… Outflow valve, 2
522 to 2526 …… Valve, 2527 to 2531 …… Pressure regulator, 253
2,2533 ... Auxiliary valve, 2534 ... Main valve, 2535 ...
… Leak valve, 2536 …… Vacuum gauge, 2537 …… Base body cylinder, 2538 …… Heating heater, 2539 …… Motor, 2540
…… High-frequency power source Regarding Fig. 261, 2601 …… Photoreceptive member, 2602 …… Semiconductor laser, 2603…
… Fθ lens, 2604 …… Polygon mirror.

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Jun Koike 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc. (56) References JP 54-145539 (JP, A) JP 54 -145540 (JP, A) JP-A-59-58436 (JP, A) JP-A-60-31144 (JP, A) US Patent 4432220 (US, A) US Patent 3269066 (US, A)

Claims (9)

[Claims] 1. An amorphous material containing, on a support, a silicon atom, at least one of a germanium atom and a tin atom, and at least one selected from an oxygen atom, a carbon atom and a nitrogen atom. A light-receiving member having a multi-layered light-receiving layer having at least a photosensitive layer configured, wherein the recess has a width D of 500 μm on the surface of the support.
A light-receiving member characterized in that the recess has concavities and convexities formed by a plurality of spherical trace recesses having a radius of curvature R and a width D of 0.035 ≦ D / R. 2. The light-receiving layer contains an atom belonging to Group III or Group V of the periodic table.
Item 7. The light receiving member according to item. 3. The light according to claim 1, wherein the light receiving layer has a charge injection blocking layer containing an atom belonging to Group III or Group V of the periodic table as one of the constituent layers. Receiving member. 4. The light receiving member according to claim 1, wherein the light receiving layer has a barrier layer as one of the constituent layers. 5. The concavo-convex pattern of the spherical trace dents is a concave-convex pattern of spherical trace dents having the same radius of curvature.
Item 7. The light receiving member according to item. 6. The light receiving member according to claim 1, wherein the unevenness of the spherical trace depression is unevenness having depressions having the same radius of curvature and width. 7. The scope of claim 1, wherein the spherical trace depressions are unevenness due to the trace depressions of the rigid true spheres obtained by spontaneously dropping a plurality of rigid true spheres on the surface of the support. Light receiving member. 8. The scope of claim 7, wherein the spherical trace dents are irregularities due to the trace dents of the rigid true spheres obtained by dropping rigid true spheres having substantially the same diameter from substantially the same height. The light receiving member described. 9. The light receiving member according to claim 1, wherein the support is a metal body.