JPH0684540B2 - Multi-layer film production equipment - Google Patents

Description

The present invention relates to a multilayer film forming apparatus for obliquely laminating a film on a surface thereof, and particularly utilizes asymmetric reflection in a soft X-ray (several Å to several 100 Å) region. The present invention relates to a multilayer film forming method suitable for enlarging / reducing an image.

[Conventional technology]

Conventionally, for enlarging / reducing an image using asymmetric reflection, a single crystal such as silicon was used, and the surface was obliquely exposed to the Bragg anti-slope. This can be done, for example, by the Nuclea Instruments and Methods (Nuclea
r Instruments and Methods) Volume 177 (1980), pages 117 to 126, and applicable wavelength range of light is shorter than the lattice spacing (ie, less than several Å).
I am limited.

[Problems to be solved by the invention]

The above-mentioned prior art is a region where the wavelength of light capable of enlarging / reducing an image by asymmetric reflection is equal to or less than the lattice spacing of a single crystal, and in principle, Bragg reflection in the soft X-ray region (several Å to several hundred Å). However, it was impossible to enlarge / reduce the image by asymmetric reflection.

An object of the present invention is to form a multilayer film in which films are obliquely laminated on the surface, control the film thickness so that asymmetrical reflection is possible in the soft X-ray region, and enlarge or reduce an image. Is to realize.

[Means for solving problems]

The above purpose is to evaporate the elements from a vapor deposition source capable of alternately depositing two elements, monitor the film thickness and the vapor deposition rate with a film thickness meter, and use a movable shutter driven by a piezo element to control the feed back according to the vapor deposition rate. It is achieved by vapor deposition while moving. The moving shutter is placed in parallel with the surface of the sample and moved linearly with the amount of vapor deposition to form one layer.

[Action]

Movement by piezo element drive to solve the problem The shutter moves in the order of Å, and at the same time, when the shutter moves to the maximum displacement of the piezo element (several hundred μm), the displacement of the piezo element is returned to zero again. repeat.
This enables oblique vapor deposition on any large area.

〔Example〕

An embodiment of the present invention will be described below with reference to FIGS. 1 and 2. As shown in FIG. 1, the whole structure is in the ultra-high vacuum chamber 1. The sample substrate 2 is set as shown. In the figure, several films have already been deposited diagonally. Here, two vapor deposition sources 6 and 6'are prepared so that two types of elements can be vapor deposited. Ordinary shutters 5,5 'for alternate deposition
Is attached.

The method of forming the multilayer film diagonally is as follows. The moving shutter 3 is aligned with the left end position of the sample substrate. The configuration of the mobile shutter is shown in FIG. The moving shutter moves on the slide base 12 in the direction of the arrow. First, a voltage is applied to the left side of the piezo element 11 to extend it and fix it to the slide stand 12, and the right side of the piezo element 11 is set to zero voltage to be free with respect to the slide stand 12. Next, a beam is emitted from the vapor deposition source 6, and the vapor deposition controller 8 controls the vapor deposition power source 9 so that the vapor deposition rate and the film thickness are monitored by the film thickness meter 4 so that the vapor deposition rate is constant. The shutter 5 is opened, and the beam is emitted from the vapor deposition source 6 on one side onto the sample substrate. At this time, the moving shutter 3 is moved to the right so as to satisfy the conditions for oblique vapor deposition described later. The second move
Control is performed by gradually increasing both voltages of the piezo element 10 shown in the figure. The moving speed is piezo element controller 7
It is controlled by adding a feed back signal of vapor deposition speed to. When depositing the next element, the shutter 5 of the previous vapor deposition source 6 is closed, and the shutter 5'of the other vapor deposition source 6'is opened.
Move Perform by moving the shutter.

Normally, the maximum amount of extension of the piezo element is several hundreds of μm or less, so the following operation is performed when the piezo element 10 is in the fully extended state. That is, the right side of the piezo element 11 is extended and fixed to the slide base 12, the voltage of the left side of the piezo element 11 is set to zero, and the slide base 12 is free. Next, the voltage of the piezo element 10 is reduced to zero, and the voltage is applied to the left side of the piezo element 11 to fix it on the slide base. The voltage on the right side of the piezo element 11 is set to zero, and the slide table is free. By repeating the above operations, it is possible for the mobile shutter to move in the order of Å in principle, and the total movement amount can be easily in the order of centimeters.

If a multilayer film is formed by the above operation, a multilayer film having a shape as shown in FIG. 3 in cross section can be obtained. Therefore, specific numerical values are shown based on FIG. It is assumed that the film 8 of the element A and the film 9 of the element B are alternately laminated. One pair of film thickness is d, Bragg reflection angle is θ, incident angle is α, anti-slope S, incident beam diameter is a ₁ ,
The reflected beam diameter is a ₂ , and the horizontal distance between the pair of films is b. The element of layer A is, for example, a Mo layer, and the element of B is Si. The wavelength of light used is assumed to be 40Å. 2d sin θ from Bragg's equation
= Λ.

If d = 40Å, then θ = 30 deg. Then a ₁ and a ₂
The ratio of a ₂ / a ₁ = sin (2θ−α) / sinα
The smaller is, the larger the ratio of a ₂ / a ₁ . That is, the magnification ratio increases. If it is expanded 5 times, α = 8.9 deg. Therefore, the inclination angle of this oblique multilayer film must be θ−α = 21.1 deg. At this time, the horizontal distance of one pair is b = 103.7Å.

In the case of actual vapor deposition, when the layers A and B have the same film thickness, the moving shutter of FIG.
Move 8Å. Piezo element 10 at 1000V 10
When the one that moves 0 μm is used, the required amount of movement is obtained at a voltage of 51.8 mV. Such a piezo element is easily available. Next, if the length of the reflective surface in Fig. 3 is 5 cm, the horizontal distance is 5 x cos21.1deg = 4.66 cm, and 1000 V
In the piezoelectric element 10 to 100μm ^{moving, 4.66 × 10 4/10 2} = 46
By repeating the operation to reach the maximum extension amount 6 times, 4.66 cm
Can be moved. All of these operations can be performed automatically by adding a micro computer to the deposition controller.

〔The invention's effect〕

According to the present invention, it is possible to form a multilayer film that is laminated obliquely with respect to the surface, and thus it is possible to realize an optical element that enlarges or reduces an image in a soft X-ray region (several Å to several hundred Å). .

[Brief description of drawings]

FIG. 1 is a schematic diagram showing the overall structure of the present invention, and FIG.
FIG. 3 is a plan view and a side view showing the principle configuration of the movable shutter shown in the figure, and FIG. 3 is a cross-sectional view of a multilayer film obliquely laminated and an explanatory view of the principle of image enlargement / reduction. 1 ... Ultra high vacuum container, 2 ... Sample substrate, 3 ... movable shutter, 4 ... thickness meter, 5 ... normal shutter, 6 ... deposition source, 7 ... piezo element controller, 8 ... deposition Controller, 9 ... Evaporation source controller, 10 ... Piezo element A, 11 ...
Piezo element B, 12 …… Slide base, 13 …… Shutter plate.

Claims (2)

[Claims] 1. A vapor deposition source, a sample to be vapor-deposited with an element from the vapor deposition source, means for monitoring the vapor deposition amount of the element, and a vapor deposition source provided between the vapor deposition source and the sample. A multilayer film forming apparatus characterized in that a shutter for preventing the element of (1) from being deposited on the surface of the sample is provided in an ultra-high vacuum container, and the shutter is moved by utilizing a piezo element according to the deposition amount. . 2. The multi-layer according to claim 1, wherein when the expansion amount of the piezo element reaches a predetermined value, the expansion amount is controlled again starting from the position thereof. Membrane making device.