JPH06836Y2 - Solar cell type diode - Google Patents
Solar cell type diodeInfo
- Publication number
- JPH06836Y2 JPH06836Y2 JP1987107988U JP10798887U JPH06836Y2 JP H06836 Y2 JPH06836 Y2 JP H06836Y2 JP 1987107988 U JP1987107988 U JP 1987107988U JP 10798887 U JP10798887 U JP 10798887U JP H06836 Y2 JPH06836 Y2 JP H06836Y2
- Authority
- JP
- Japan
- Prior art keywords
- diode
- solar cell
- glass
- metal film
- cell type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Description
【考案の詳細な説明】 <産業上の利用分野> 本考案は、例えば、人工衛星などの宇宙飛翔体に電力を
供給する太陽電池アレイにおいて、ブロッキングダイオ
ードあるいはシャントダイオードとしてアレイ基板上に
取り付けて使用する太陽電池セル型ダイオードに関す
る。DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention is used, for example, in a solar cell array that supplies electric power to a spacecraft such as an artificial satellite, by mounting it on an array substrate as a blocking diode or a shunt diode. The present invention relates to a solar cell type diode.
<考案の概要> 太陽電池と同じ形態すなわちウエハー状に形成されその
ウエハーの表面にダイオードとして機能するPN接合が
形成され、接合の上面とチップ裏面に電極が設けられて
なる太陽電池セル型ダイオードにおいて、これをブロッ
キングダイオードあるいはシャントダイオードとして正
常に動作させるには、外部からの光の入射を完全に遮断
し、ダイオードにおける光起電力の発生を防止しなけれ
ばならない。そこで、一主面に太陽光に対して高反射率
をもつ金属膜を付着させこのガラスを接着材によりダイ
オードチツプに貼り付ける構造とすることにより、ガラ
スの放射率を損なうことなく、またダイオードへの太陽
光の入射を遮断して、太陽光吸収率対放射率の比を小さ
くすることが可能となり、一般的に半導体デバイスにと
って好ましい低温度での動作を可能とする。<Outline of the Invention> A solar cell type diode having the same shape as a solar cell, that is, a wafer, and a PN junction functioning as a diode is formed on the surface of the wafer, and electrodes are provided on the upper surface of the junction and the back surface of the chip. In order to operate this normally as a blocking diode or a shunt diode, it is necessary to completely block the incidence of light from the outside and prevent the generation of photovoltaic power in the diode. Therefore, by attaching a metal film having a high reflectance to sunlight on one main surface and attaching this glass to the diode chip with an adhesive, it is possible to use the glass without damaging the emissivity of the glass and to the diode. It is possible to block the incidence of sunlight and reduce the ratio of solar absorptance to emissivity, which enables operation at a low temperature that is generally preferable for semiconductor devices.
<従来の技術> 従来はダイオードチツプ表面の全面に電極を設けて遮光
していた。また、熱特性を改善するためにカバーガラス
が接着されていた。<Prior Art> Conventionally, an electrode is provided on the entire surface of the diode chip to shield light. Also, a cover glass has been adhered to improve the thermal characteristics.
<発明が解決しようとする問題点> ところが、太陽電池セル型ダイオードは太陽電池セルと
同様に太陽電池アレイ基板に取付けられて使用されるた
め、太陽電池セルと同様に太陽光の照射を受ける。もし
ダイオードに対する遮光が不十分ならば、ダイオードの
PN接合による光起電力が発生し、ブロッキングダイオ
ードの場合は太陽電池アレイの発生電圧を打ち消す作用
をし、シャントダイオードの場合は、太陽電池アレイの
発生電圧をダイオードの両端子電圧でシャントするため
本来の発生電力を著るしく失うことになる。したがっ
て、ダイオードへの光入射を遮るためにダイオード表面
全面に電極を設けようとすると、P,N両領域の短絡を防
ぐための工夫が必要である。<Problems to be Solved by the Invention> However, since the solar cell type diode is used by being mounted on the solar cell array substrate similarly to the solar cell, the solar cell type diode is irradiated with sunlight like the solar cell. If the light shielding to the diode is insufficient, a photovoltaic power is generated by the PN junction of the diode, and in the case of a blocking diode, it acts to cancel the generated voltage of the solar cell array, and in the case of a shunt diode, the generation of the solar cell array. Since the voltage is shunted by the voltage of both terminals of the diode, the original generated power is significantly lost. Therefore, if an electrode is to be provided on the entire surface of the diode in order to block light from entering the diode, it is necessary to devise a means for preventing a short circuit in both P and N regions.
<問題点を解決するための手段> ダイオードチツプと、一主面に太陽光に対して高反射率
をもつ金属膜を付着させたガラスと、を有し、前記ガラ
スが前記ダイオードチツプに対し、接着剤を介し、前記
ガラスの前記金属膜が前記ダイオードチツプの表面に対
向するように接着されてなることを特徴とする。<Means for Solving Problems> A diode chip and a glass having a metal film having a high reflectance for sunlight on one main surface are attached, and the glass has a diode chip with respect to the diode chip. It is characterized in that the metal film of the glass is adhered to the surface of the diode chip via an adhesive so as to face the surface of the diode chip.
<作用> 本考案は上記構成により、ダイオードチツプ表面と金属
膜の間に接着剤等の絶縁物層が形成されるように接着す
れば、P領域とN領域を短絡させることなく、容易にダ
イオードチツプへの光の入射を防止できる。また、ガラ
ス表面からの放射率を失うこともないのでガラスの高い
放射率は維持され、金属膜面での光の入射の防止効果と
ともに、ダイオードの太陽光吸収率対放射率比を小さく
することができ、ダイオードの動作温度を低くすること
が可能となる。<Operation> According to the present invention, with the above-described structure, if an adhesive layer such as an adhesive layer is formed between the diode chip surface and the metal film, the diode can be easily formed without short-circuiting the P region and the N region. It is possible to prevent light from entering the chip. In addition, since the emissivity from the glass surface is not lost, the high emissivity of the glass is maintained, and it is possible to reduce the solar absorptance to emissivity ratio of the diode as well as to prevent the incidence of light on the metal film surface. Therefore, the operating temperature of the diode can be lowered.
<実施例> 以下、図面を参照して本考案の一実施例を説明する。<Embodiment> An embodiment of the present invention will be described below with reference to the drawings.
図面は本考案の一実施例の太陽電池セル型ダイオードの
構造を示す断面図である。FIG. 1 is a sectional view showing the structure of a solar cell diode according to an embodiment of the present invention.
1はガラス、2は金属膜、3はN型シリコン基板、4は
P型拡散層、5はP電極、6はN電極、7はダイオード
チツプ、8は薄膜状リード、9は接着剤である。1 is glass, 2 is a metal film, 3 is an N-type silicon substrate, 4 is a P-type diffusion layer, 5 is a P electrode, 6 is an N electrode, 7 is a diode chip, 8 is a thin film lead, and 9 is an adhesive. .
この実施例は、図に示すように、ガラス1の一主面に太
陽光に対して高反射率をもつ金属膜2を付着させ、この
ガラス1をダイオードチツプ7の表面に貼り付けて構成
している。In this embodiment, as shown in the drawing, a metal film 2 having a high reflectance for sunlight is attached to one main surface of the glass 1, and the glass 1 is attached to the surface of a diode chip 7. ing.
上記構造の太陽電池セル型ダイオードについて、その製
造方法を説明する。A method of manufacturing the solar cell type diode having the above structure will be described.
まず、N型シリコン基板3にボロン等のP型の不純物を
拡散しP型拡散層4を形成し、メサエッチングを行い、
基板3の表面にダイオードとして機能するPN接合を形
成する。この後、P電極5及びN電極6を形成しダイオ
ードチツプ7を作製する。さらに、ダイオードチツプ7
の表面側のP電極5に薄板状のリード8を溶接などによ
り取り付ける。一方、例えば50〜500ミクロン程度
の厚さをもつガラス1の一主面に、アルミニウム等の太
陽光に対して良好な反射率をもつ金属膜2を真空蒸着法
等により太陽光が透過しない程度の厚さに付着させてお
く。このアルミニウム等の金属膜2が付着された面を、
ダイオードチツプ7の表面側に、シリコーン樹脂等の接
着剤9を用いて接着する。First, a P-type impurity such as boron is diffused in the N-type silicon substrate 3 to form a P-type diffusion layer 4, and mesa etching is performed.
A PN junction that functions as a diode is formed on the surface of the substrate 3. After that, the P electrode 5 and the N electrode 6 are formed, and the diode chip 7 is manufactured. In addition, the diode chip 7
A thin plate-shaped lead 8 is attached to the P electrode 5 on the front surface side of, by welding or the like. On the other hand, to the extent that sunlight does not pass through a metal film 2 having a good reflectance for sunlight such as aluminum on one main surface of the glass 1 having a thickness of, for example, about 50 to 500 microns by a vacuum deposition method or the like. To the thickness of. The surface to which the metal film 2 such as aluminum is attached is
The surface of the diode chip 7 is adhered by using an adhesive 9 such as a silicone resin.
なお、図示した例ではメサ型のダイオードとなっている
が、本考案をプレーナ型のダイオードに適用することも
可能である。In the illustrated example, a mesa type diode is used, but the present invention can also be applied to a planar type diode.
本考案は、ガラスの一主面に付着させた金属膜により太
陽光の入射を遮断するため、太陽電池アレイにブロッキ
ングダイオードまたはシャントダイオードとして使用し
た場合に、アレイの動作に悪影響を及ぼす光電流の発生
を防止することができる。また、太陽のほとんどすべて
が金属膜面から反射されるので、いわゆる太陽光吸収率
を極めて低く抑えることができ、ガラスの好ましい特性
である良好な熱放射率が維持されるので、太陽光吸収率
対熱放射率が小さくなり、ダイオードの動作温度を低く
保つことが可能となる。In the present invention, the metal film attached to one main surface of the glass blocks the incidence of sunlight, so when used as a blocking diode or a shunt diode in a solar cell array, the photocurrent that adversely affects the operation of the array is prevented. Occurrence can be prevented. Moreover, since almost all of the sun is reflected from the metal film surface, the so-called solar absorptivity can be suppressed to a very low level, and good thermal emissivity, which is a preferable characteristic of glass, is maintained, so the solar absorptivity is The emissivity to heat becomes small, and it becomes possible to keep the operating temperature of the diode low.
<考案の効果> 以上述べてきたように本考案によれば、簡単な構造で、
外部からの光の入射を遮断することにより光電流の発生
を防ぎ、かつ外部からの熱の伝導も遮断するとともに、
ガラスからの放散によりダイオードの発熱を空間へ逃が
すことができる新規有用な太陽電池セル型ダイオードを
提供できる。<Effects of the Invention> As described above, according to the present invention, with a simple structure,
By blocking the incidence of light from the outside, it prevents the generation of photocurrent, and also blocks the conduction of heat from the outside.
It is possible to provide a new useful solar cell type diode capable of releasing the heat generated by the diode to the space by being diffused from the glass.
図面は本考案の一実施例の太陽電池セル型ダイオードの
構造を示す断面図である。 1…ガラス、2…金属膜,7…ダイオードチツプ、9…
接着剤。FIG. 1 is a sectional view showing the structure of a solar cell diode according to an embodiment of the present invention. 1 ... Glass, 2 ... Metal film, 7 ... Diode chip, 9 ...
adhesive.
Claims (1)
して高反射率をもつ金属膜を付着させたガラスと、を有
し、 前記ガラスが前記ダイオードチツプに対し、接着剤を介
し、前記ガラスの前記金属膜が前記ダイオードチップの
表面に対向するように接着されてなることを特徴とする
太陽電池セル型ダイオード。1. A diode chip, and a glass having a metal film having a high reflectance for sunlight on one main surface, the glass being bonded to the diode chip with an adhesive. A solar cell type diode, characterized in that the metal film of the glass is bonded so as to face the surface of the diode chip.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1987107988U JPH06836Y2 (en) | 1987-07-14 | 1987-07-14 | Solar cell type diode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1987107988U JPH06836Y2 (en) | 1987-07-14 | 1987-07-14 | Solar cell type diode |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6413160U JPS6413160U (en) | 1989-01-24 |
JPH06836Y2 true JPH06836Y2 (en) | 1994-01-05 |
Family
ID=31342903
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1987107988U Expired - Lifetime JPH06836Y2 (en) | 1987-07-14 | 1987-07-14 | Solar cell type diode |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH06836Y2 (en) |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60224284A (en) * | 1984-04-20 | 1985-11-08 | Seikosha Co Ltd | Solar battery cell having reverse-flow preventing diode |
JPS60222888A (en) * | 1984-04-20 | 1985-11-07 | シチズン時計株式会社 | Manufacture of thin film non-wire type resistance element |
-
1987
- 1987-07-14 JP JP1987107988U patent/JPH06836Y2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPS6413160U (en) | 1989-01-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4710588A (en) | Combined photovoltaic-thermoelectric solar cell and solar cell array | |
US5019176A (en) | Thin solar cell and lightweight array | |
US6103970A (en) | Solar cell having a front-mounted bypass diode | |
US7741225B2 (en) | Method for cleaning a solar cell surface opening made with a solar etch paste | |
US4673770A (en) | Glass sealed silicon membrane solar cell | |
JP2002527889A (en) | Solar cell having bypass diode and method of manufacturing solar cell | |
MXPA01009280A (en) | An aluminum alloy back junction solar cell and a process for fabricatin thereof. | |
JPH11330526A (en) | Solar battery cell and its manufacture | |
US20200335642A1 (en) | Built-in bypass diode | |
US3532551A (en) | Solar cell including second surface mirrors | |
JPH03283474A (en) | Compound semiconductor photoelectric conversion element of si substrate | |
JP3203076B2 (en) | Silicon solar cells for space | |
JP2878031B2 (en) | Thin solar cell and manufacturing method | |
JPS63276279A (en) | Semiconductor device | |
JPH06836Y2 (en) | Solar cell type diode | |
JP3133494B2 (en) | Photovoltaic element | |
US3993800A (en) | Mounting technique for thin film Schottky barrier photodiodes | |
US3554818A (en) | Indium antimonide infrared detector and process for making the same | |
JPH0613639A (en) | Photovoltaic device | |
JP3103737B2 (en) | Solar cell element | |
JP2015023280A (en) | Solar power system for space vehicle or satellite using inverted metamorphic multijunction solar cell | |
Lawrence et al. | GaAs 0.6 P 0.4 LED's with efficient transparent contacts for spatially uniform light emission | |
JPS622712B2 (en) | ||
JPS6258672B2 (en) | ||
WO2014112053A1 (en) | Solar cell and method for manufacturing same |