JPH0666583B2 - High C / N oscillator circuit - Google Patents

High C / N oscillator circuit

Info

Publication number
JPH0666583B2
JPH0666583B2 JP22715588A JP22715588A JPH0666583B2 JP H0666583 B2 JPH0666583 B2 JP H0666583B2 JP 22715588 A JP22715588 A JP 22715588A JP 22715588 A JP22715588 A JP 22715588A JP H0666583 B2 JPH0666583 B2 JP H0666583B2
Authority
JP
Japan
Prior art keywords
circuit
frequency
low
noise component
oscillation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP22715588A
Other languages
Japanese (ja)
Other versions
JPH0275206A (en
Inventor
洋二 巻島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Radio Co Ltd
Original Assignee
Japan Radio Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Radio Co Ltd filed Critical Japan Radio Co Ltd
Priority to JP22715588A priority Critical patent/JPH0666583B2/en
Publication of JPH0275206A publication Critical patent/JPH0275206A/en
Publication of JPH0666583B2 publication Critical patent/JPH0666583B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は高周波発振回路に係わり、特に無線電信電話装
置等のPLLのVCOに適する発振回路に関する。
Description: TECHNICAL FIELD The present invention relates to a high-frequency oscillator circuit, and more particularly to an oscillator circuit suitable for a VCO of a PLL such as a wireless telephone device.

(従来の技術) 高周波発振回路の一例を第2図に示す。第2図の回路は
変形コルピッツ発振回路で、発振周波数において、L1,C
1の直列回路は誘導性、L2,C3の並列回路は容量性とな
る。またC5はトランジスタTR1のコレクタを高周波的に
接地し、C6は次段へ発振出力を結合する。
(Prior Art) An example of a high-frequency oscillator circuit is shown in FIG. Circuit of FIG. 2 is a variant Colpitts oscillation circuit, the oscillation frequency, L 1, C
The series circuit of 1 is inductive, and the parallel circuit of L 2 and C 3 is capacitive. C 5 grounds the collector of the transistor TR 1 at high frequency, and C 6 couples the oscillation output to the next stage.

このような発振回路ではトランジスタTR1の内部に発
生、又は入力側(ベース側)に誘導する低周波雑音成分
によりC/Nは劣化する。高C/N化を画るために従来
採られていた手段には、(1)同調素子に高Qの素子の
使用(2)トランジスタ等の能動素子の動作電流を増大
(3)トランジスタのベースにチョークコイルを付設等
があった。
In such an oscillator circuit, C / N is deteriorated by a low frequency noise component generated inside the transistor TR1 or induced on the input side (base side). Means that have been conventionally adopted to draw a high C / N ratio include (1) use of a high Q element as a tuning element (2) increase the operating current of an active element such as a transistor (3) base of a transistor There was a choke coil attached to the.

(発明が解決しようとする課題) しかし乍ら、高Qの素子特に空心コイルの径を大、又は
コアの挿入またチョークコイルの付設等の手段では回路
の小形化が得難く、トランジスタ等に大きな電流を流す
ことは低消費電流化の点及びコストの点から問題があ
る。
(Problems to be Solved by the Invention) However, it is difficult to reduce the size of a circuit by means of increasing the diameter of a high-Q element, especially an air-core coil, or inserting a core or attaching a choke coil. Passing a current is problematic in terms of low current consumption and cost.

(課題を解決するための手段) 本発明はこれらの課題を解決するため、高周波発振回路
において、該高周波発振回路を構成する増幅素子の出力
側回路の一部に挿入した抵抗器と、該抵抗器に並列に接
続して高周波の発振周波数成分を側路し、低周波の雑音
成分を得るコンデンサと、入力端が該コンデンサに接続
され出力端が前記増幅素子の入力側回路に接続され、LP
F(ローパスフイルタ)を有し、前記コンデンサで得た
雑音成分を増幅し、位相反転した信号を出力する低周波
増幅回路とを設けて、負帰還により低周波雑音成分を打
ち消して発振回路の高C/N化を画ったもので、以下実
施例につき図面により詳細に説明する。
(Means for Solving the Problems) In order to solve these problems, the present invention provides a high-frequency oscillation circuit, a resistor inserted in a part of an output-side circuit of an amplification element forming the high-frequency oscillation circuit, and the resistor. Connected in parallel to the capacitor to bypass the high-frequency oscillation frequency component to obtain a low-frequency noise component, an input terminal connected to the capacitor, and an output terminal connected to the input side circuit of the amplification element.
A low-frequency amplifier circuit that has an F (low-pass filter), amplifies the noise component obtained by the capacitor, and outputs a phase-inverted signal is provided. An example of C / N conversion is described below, and examples will be described in detail with reference to the drawings.

(実施例) 第1図は本発明の一実施例を示す回路図で、第2図の従
来例に本発明を適用したものである。
(Embodiment) FIG. 1 is a circuit diagram showing an embodiment of the present invention, in which the present invention is applied to the conventional example of FIG.

1はLPFとなる低周波増幅回路、C1〜C6は固定コンデン
サ、L1,L2はコイル、R1〜R3は固定抵抗器、TR1はトラン
ジスタである。
Reference numeral 1 is a low-frequency amplifier circuit that serves as an LPF, C 1 to C 6 are fixed capacitors, L 1 and L 2 are coils, R 1 to R 3 are fixed resistors, and TR 1 is a transistor.

同図において、TR1のベース側に誘導された雑音成分お
よびトランジスタ内部にて発生した雑音成分によるエミ
ッタ電流分をi1とすれば、出力の雑音成分の電圧はi1R3
となる。
In the figure, if the emitter current caused by the noise component generated in the noise component and a transistor internal induced in the base side of the TR1 and i 1, the voltage of the noise component of the output i 1 R 3
Becomes

但し とする。f1は雑音成分の周波数 ここで低周波増幅回路1の利得をGとし、TR1の雑音成
分の入力インピーダンスはR1,R2と較べて充分大きいと
すれば、TR1に出力される雑音成分の電圧は となる。
However And f 1 is the frequency of the noise component. Here, if the gain of the low frequency amplifier circuit 1 is G and the input impedance of the noise component of TR1 is sufficiently larger than R 1 and R 2 , the noise component output to TR1 The voltage is Becomes

ここで となるようにGを大きくとり、低周波増幅回路1の入出
力の位相が反転するように接続すれば、TR1の雑音成分
の電流は、低周波増幅回路1から出力される雑音成分の
電流によって打消され、等価的にTR1の雑音成分の電流
は流れなくなる。但し、低周波増幅回路1の低周波にお
けるNFは充分に小さいものとする。これによりC/Nの
良い発振回路となる。
here If G is made large so that the phase of the input and output of the low frequency amplifier circuit 1 is inverted, the current of the noise component of TR1 is changed by the current of the noise component output from the low frequency amplifier circuit 1. It is canceled out and the current of the noise component of TR1 equivalently stops flowing. However, NF at the low frequency of the low frequency amplifier circuit 1 is sufficiently small. As a result, the oscillation circuit has a good C / N.

また、発振周波数f0において (低周波増幅回路1のf0における出力インピーダンス+
R2)>>(f0におけるTR1の入力インピーダンス)、C4
>>C3,(低周波増幅回路1のf0における利得)<1と
なっているため、C/N改善のために付加された低周波
増幅回路1,C4,R2,R3は発振周波数f0においては殆んど影
響のないものとなっている。また、低周波増幅回路1は
低周波成分のみ増幅すれば良く、その電力も非常に小さ
いのでその消費電流は小さく無視できる。
Also, at the oscillation frequency f 0 (Output impedance at low frequency amplifier circuit 1 at f 0 +
R 2 ) >> (TR1 input impedance at f 0 ), C 4
>> C 3, because that is the (low frequency amplification circuit gain at f 0 of 1) <1, the low-frequency amplifier circuit which is added to the C / N improving 1, C 4, R 2, R 3 is The oscillation frequency f 0 has almost no effect. Further, the low-frequency amplifier circuit 1 only needs to amplify the low-frequency component and its power is very small, so that its current consumption is small and can be ignored.

なお、この実施例に限らず、本発明は設計上LPFを高周
波の発振に影響しないように構成することにより他の型
の発振回路に適用できる。
Not limited to this embodiment, the present invention can be applied to other types of oscillation circuits by designing the LPF so as not to affect high-frequency oscillation.

また、C1,C3等の一部又はすべてを可変容量ダイオード
で構成すればVCOとなすことができる。
Further, if a part or all of C 1 , C 3, etc. are constructed by variable capacitance diodes, they can be used as a VCO.

(発明の効果) 以上説明したように、C/Nの改善を半導体回路で形成
できるため発振回路を含めたIC化が可能となる。従って
小形、低消費電流、低価格の高C/N発振回路が可能と
なる。また、直流信号も帰還されるためバイアスの安定
化にもなる。
(Effect of the Invention) As described above, since the improvement of C / N can be formed by the semiconductor circuit, the IC including the oscillation circuit can be realized. Therefore, a compact, low current consumption, low cost, high C / N oscillator circuit can be realized. Further, since the DC signal is also fed back, the bias is also stabilized.

【図面の簡単な説明】[Brief description of drawings]

第1図は本発明の一実施例を示す回路図で第2図は従来
例である。 1……低周波増幅回路、C1〜C4……固定コンデンサ、
L1,L2……高周波コイル、R1〜R4……固定抵抗、TR1……
トランジスタ。
FIG. 1 is a circuit diagram showing an embodiment of the present invention, and FIG. 2 is a conventional example. 1 ...... low frequency amplifying circuit, C 1 -C 4 ...... fixed capacitor,
L 1 , L 2 …… High frequency coil, R 1 to R 4 …… Fixed resistance, TR 1 ……
Transistor.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】高周波発振回路において、該高周波発振回
路を構成する増幅素子の出力側回路の一部に挿入した抵
抗器と、該抵抗器に並列に接続して高周波の発振周波数
成分を側路し低周波の雑音成分を得るコンデンサと、入
力端が該コンデンサに接続され出力端が前記増幅素子の
入力側回路に接続されLPF(ローパスフイルタ)を有し
前記コンデンサで得た雑音成分を増幅し位相反転した信
号を出力する低周波増幅回路とを設けたことを特徴とす
る高C/N発振回路。
1. A high frequency oscillating circuit, wherein a resistor inserted in a part of an output side circuit of an amplifying element which constitutes the high frequency oscillating circuit and a resistor connected in parallel to the resistor to oscillate a high frequency oscillating frequency component. A low frequency noise component, and an input end connected to the capacitor and an output end connected to the input side circuit of the amplifying element and having an LPF (low pass filter) to amplify the noise component obtained by the capacitor. A high C / N oscillating circuit provided with a low frequency amplifying circuit for outputting a phase-inverted signal.
JP22715588A 1988-09-09 1988-09-09 High C / N oscillator circuit Expired - Lifetime JPH0666583B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22715588A JPH0666583B2 (en) 1988-09-09 1988-09-09 High C / N oscillator circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22715588A JPH0666583B2 (en) 1988-09-09 1988-09-09 High C / N oscillator circuit

Publications (2)

Publication Number Publication Date
JPH0275206A JPH0275206A (en) 1990-03-14
JPH0666583B2 true JPH0666583B2 (en) 1994-08-24

Family

ID=16856358

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22715588A Expired - Lifetime JPH0666583B2 (en) 1988-09-09 1988-09-09 High C / N oscillator circuit

Country Status (1)

Country Link
JP (1) JPH0666583B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19620760B4 (en) * 1996-05-23 2006-06-29 Sennheiser Electronic Gmbh & Co. Kg oscillator circuit
US8451071B2 (en) * 2008-11-24 2013-05-28 Raytheon Company Low noise oscillators

Also Published As

Publication number Publication date
JPH0275206A (en) 1990-03-14

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