JPH0658975A - Substrate test equipment - Google Patents

Substrate test equipment

Info

Publication number
JPH0658975A
JPH0658975A JP4210585A JP21058592A JPH0658975A JP H0658975 A JPH0658975 A JP H0658975A JP 4210585 A JP4210585 A JP 4210585A JP 21058592 A JP21058592 A JP 21058592A JP H0658975 A JPH0658975 A JP H0658975A
Authority
JP
Japan
Prior art keywords
substrate
crystal
wiring
electro
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4210585A
Other languages
Japanese (ja)
Inventor
Kazuyuki Ozaki
一幸 尾崎
Shinichi Wakana
伸一 若菜
Akio Ito
昭夫 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP4210585A priority Critical patent/JPH0658975A/en
Publication of JPH0658975A publication Critical patent/JPH0658975A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To obtain a conduction test equipment for substrate in which the substrate is protected against breakdown by utilizing electrooptic effect in place of a probe. CONSTITUTION:An equipment for testing conducting state of wiring 4 formed on a substrate 3 comprises a crystal 1 contacting with the substrate 3 and exhibiting both electrooptic effect and optical conductivity, and a transparent electrode 2 applied on the surface of the crystal 1 oppositely to the substrate 3. The test equipment further comprises a power supply 5 connected with the transparent electrode 2 and applying a voltage thereon, a writing light beam irradiating section for irradiating the wiring 4 to be measured with a light beam having such wavelength as exhibiting optical conductivity through the crystal 1, and an electrooptical image measuring section for irradiating the crystal 1 with a reading light having such wavelength as exhibiting electrooptic effect and observing an optical image feflected on the crystal 1.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は基板試験装置に係り,特
に基板上の配線パターンが設計通りに接続されているか
どうかを試験する装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a board testing device, and more particularly to a device for testing whether a wiring pattern on a board is connected as designed.

【0002】例えば,マルチチップモジュール(MCM) で
は半導体チップが使用され,配線が複数の層で形成され
るため,チップ搭載前に配線パターンの導通試験(オー
プン/ショート)を行う必要がある。
For example, since a semiconductor chip is used in a multi-chip module (MCM) and wiring is formed by a plurality of layers, it is necessary to conduct a continuity test (open / short) of a wiring pattern before mounting the chip.

【0003】[0003]

【従来の技術】基板に形成された配線の導通を試験する
ためには,配線の両端で電圧の印加,測定を行うことが
必要である。従来技術では,多数の探針を整列させて基
板に押し当て,スイッチの切り替えによって配線を選択
し,電圧の印加,測定を行っていた。
2. Description of the Related Art In order to test the continuity of wiring formed on a substrate, it is necessary to apply and measure a voltage at both ends of the wiring. In the conventional technique, a large number of probes are aligned and pressed against the substrate, wiring is selected by switching switches, and voltage is applied and measured.

【0004】一方,光学の分野では結晶の電気光学効果
を利用した電圧測定技術が良く知られており,近年の高
速信号の計測にも応用されている。例えば,本発明者に
より,検出用電気光学結晶を実装プリント基板の配線部
に接近させて信号波形の測定を行う方式が提供されてい
る。この検出方式を拡張して基板の導通試験を行うこと
ができれば上記の探針による測定にとって代わることが
できる。
On the other hand, in the field of optics, a voltage measurement technique utilizing the electro-optic effect of crystals is well known and has been applied to the measurement of high speed signals in recent years. For example, the present inventor has provided a method of measuring a signal waveform by bringing a detection electro-optic crystal close to a wiring portion of a mounting printed circuit board. If this detection method can be extended to conduct a continuity test of the substrate, it can replace the above-mentioned measurement by the probe.

【0005】[0005]

【発明が解決しようとする課題】従来の試験方式では,
針圧によって基板を破壊したり,針により配線端が損傷
するという問題がある。
[Problems to be Solved by the Invention] In the conventional test method,
There is a problem that the substrate may be destroyed by the stylus pressure or the wiring end may be damaged by the stylus.

【0006】本発明は探針を使用しないで電気光学効果
を利用し,基板を破壊する恐れのない導通試験装置の提
供を目的とする。
It is an object of the present invention to provide a continuity test device which utilizes the electro-optic effect without using a probe and which does not damage the substrate.

【0007】[0007]

【課題を解決するための手段】上記課題の解決は,基板
に形成された配線の導通状態を試験する装置であって,
該基板に接触させる電気光学効果と光導電性の両方の性
質を持つ結晶と,該結晶の該基板とは反対側の面に被着
された透明電極と,該透明電極に接続して電圧を印加す
る電源と,光導電性を示す波長の光を被測定配線に該結
晶を通して照射する書込光ビーム照射部と,電気光学効
果を示す波長の読出光を該結晶に照射し,該結晶からの
反射光像を観測する電気光学式画像測定部とを有する基
板試験装置により達成される。
[Means for Solving the Problems] A solution to the above problems is to provide an apparatus for testing the continuity of wiring formed on a substrate.
A crystal having both electro-optical effect and photoconductivity to be brought into contact with the substrate, a transparent electrode deposited on the surface of the crystal opposite to the substrate, and a voltage connected to the transparent electrode A power source to be applied, a writing light beam irradiation unit for irradiating the wiring to be measured with light having a wavelength exhibiting photoconductivity through the crystal, and read light having a wavelength exhibiting an electro-optical effect is irradiated to the crystal, And an electro-optical image measuring unit for observing the reflected light image of the substrate test apparatus.

【0008】[0008]

【作用】本発明は,探針を使用しない基板試験を実現す
るために,光による電圧印加と配線電圧検出(具体的に
は電気光学効果による配線電圧の読出と,光導電性によ
る電圧の印加)を行うものである。
According to the present invention, in order to realize a substrate test without using a probe, voltage application by light and wiring voltage detection (specifically, reading of wiring voltage by electro-optical effect and application of voltage by photoconductivity). ).

【0009】図1(A),(B) は本発明の原理説明図であ
る。被試験基板3上に電気光学効果と光導電性を有する
結晶1を置き,結晶が光導電性を示す波長λ1 (短波
長)の光(書込光)と,電気光学効果を示す波長λ
2(長波長)の光(読出光)の2つの光を結晶に照射す
る〔図1(B) 参照〕。電気光学結晶1の配線パターン4
の反対面には透明電極2が被着され,ここに電源5が接
続され電圧が印加される。
FIGS. 1A and 1B are explanatory views of the principle of the present invention. A crystal 1 having an electro-optical effect and photoconductivity is placed on a substrate 3 to be tested, and light (writing light) having a wavelength λ 1 (short wavelength) at which the crystal exhibits photoconductivity and a wavelength λ exhibiting an electro-optical effect.
Two lights (reading light) of 2 (long wavelength) are irradiated to the crystal [see FIG. 1 (B)]. Wiring pattern 4 of electro-optic crystal 1
A transparent electrode 2 is deposited on the surface opposite to the above, and a power source 5 is connected thereto to apply a voltage.

【0010】設計データに基づいて,測定しようとする
配線パターン4に書込光ビームを照射することにより,
この配線パターンに光導電性を利用して電圧を印加す
る。一方,結晶に読出光を照射することにより,電気光
学効果を利用して基板上の電圧分布を測定することによ
り,書込光照射パターンに接続された配線の導通を知る
ことができる。
By irradiating the wiring pattern 4 to be measured with the writing light beam based on the design data,
A voltage is applied to this wiring pattern by utilizing photoconductivity. On the other hand, by irradiating the crystal with the reading light, the conduction of the wiring connected to the writing light irradiation pattern can be known by measuring the voltage distribution on the substrate by utilizing the electro-optical effect.

【0011】この方式によると,基板にかかる荷重は結
晶の荷重のみであり,基板を破壊することはない。
According to this method, the load applied to the substrate is only the crystal load, and the substrate is not destroyed.

【0012】[0012]

【実施例】図2は本発明の実施例を説明する断面図であ
る。図において,測定部は基板搭載台6,基板全面を覆
う結晶部1,結晶全面を走査可能な書込光ビーム照射
部,基板全面を観察可能な電気光学式画像測定部によっ
て構成される。
FIG. 2 is a sectional view for explaining an embodiment of the present invention. In the figure, the measuring unit is composed of a substrate mounting table 6, a crystal unit covering the entire surface of the substrate, a writing light beam irradiation unit capable of scanning the entire surface of the substrate, and an electro-optical image measuring unit capable of observing the entire surface of the substrate.

【0013】結晶1には例えば,基板全面を覆うGaAsを
用いる。この結晶の基板と反対の面には透明電極として
ITO(InSnO)電極2が被着され, ここに電源5より電圧が
印加される。
For the crystal 1, for example, GaAs covering the entire surface of the substrate is used. As a transparent electrode on the surface of this crystal opposite to the substrate
An ITO (InSnO) electrode 2 is deposited, and a voltage is applied to it from a power source 5.

【0014】GaAs結晶が光導電性を示す波長領域と電気
光学効果を示す波長領域の境界は850 nm 付近にある。
書込光ビーム照射部の書込光光源7には He-Neレーザ
(波長 633 nm)を用いる。レンズ9とスキャナ(例えば
ガルバノスキャナ)8により書込光ビームを結晶上の任
意の点に照射できるようにする。
The boundary between the wavelength region where the GaAs crystal exhibits photoconductivity and the wavelength region where the GaAs crystal exhibits the electro-optic effect is near 850 nm.
A He-Ne laser is used as the writing light source 7 of the writing light beam irradiation unit.
(Wavelength 633 nm) is used. The writing light beam can be applied to an arbitrary point on the crystal by a lens 9 and a scanner (for example, a galvano scanner) 8.

【0015】電気光学式画像測定部の読出光光源10には
赤外線ランプをフィルタリングしたり,あるいは InGaA
sP半導体レーザ(波長 1.3μm,1.5μm) を用いる。偏
光子と移相子11により, 光源からの光を例えば円偏光状
態にするとともに,レンズ9により読出光を基板全面に
照射する。
The reading light source 10 of the electro-optical image measuring unit may be an infrared lamp filtered or InGaA.
An sP semiconductor laser (wavelength 1.3 μm, 1.5 μm) is used. The light from the light source is made into, for example, a circularly polarized state by the polarizer and the phase shifter 11, and the reading light is applied to the entire surface of the substrate by the lens 9.

【0016】ここで,配線に電圧が印加されると,結晶
内に電界が誘起され結晶内を反射往復する光の偏光状態
が変化する。検光子12を通してCCD カメラ13で結晶から
の反射光像を観察することにより,配線電圧による読出
光偏光状態の変化が基板上の電圧分布として観測され
る。
Here, when a voltage is applied to the wiring, an electric field is induced in the crystal and the polarization state of the light reflected back and forth in the crystal changes. By observing the reflected light image from the crystal with the CCD camera 13 through the analyzer 12, the change in the polarization state of the read light due to the wiring voltage is observed as the voltage distribution on the substrate.

【0017】この実施例では,反射光を一括して2次元
画像を観測する方式を示したが,読出光をビーム状にし
て結晶上を走査させ,反射光をフォトダイオード等で測
定してもよい。
In this embodiment, a method of collectively observing a two-dimensional image of reflected light is shown. However, even if the read light is made into a beam and scanned on the crystal, and the reflected light is measured by a photodiode or the like. Good.

【0018】図3は実施例の装置を構成するブロック
図,図4は実施例の動作フローを示す図である。以下
に,図3,4を用いて実施例の動作を説明する。
FIG. 3 is a block diagram of the apparatus of the embodiment, and FIG. 4 is a diagram showing the operation flow of the embodiment. The operation of the embodiment will be described below with reference to FIGS.

【0019】試験対象の基板を基板搭載台6に搭載し,
制御部14の指示に従って基板を結晶に接触させる(図
4,41) 。次に,画像を観察しながら書込光の座標を較
正する(図4,42) 。制御部は設計データに基づき,測
定を行う配線パターンの端部の座標に書込光を照射する
(図4,43) 。光導電性によって透明電極2と配線パタ
ーン間に導電性が生ずるため,書込光が照射された配線
パターンに電圧が印加される。
The substrate to be tested is mounted on the substrate mounting base 6,
The substrate is brought into contact with the crystal according to the instruction of the control unit 14 (Figs. 4 and 41). Next, the coordinates of the writing light are calibrated while observing the image (Figs. 4, 42). Based on the design data, the control unit irradiates the coordinates of the edge of the wiring pattern to be measured with writing light (Figs. 4, 43). Since the photoconductivity causes conductivity between the transparent electrode 2 and the wiring pattern, a voltage is applied to the wiring pattern irradiated with the writing light.

【0020】次いで,書込光ビームの照射を停止した
後,透明電極への電圧印加を停止すると,書込光ビーム
を照射した配線に接続された配線パターンが帯電したま
まとなる。このときの電気光学式画像測定部(画像処理
部15) で取得した電圧分布像を制御部に取り込み(図
4,44) 設計データと比較する(図4,45) ことによ
り,書込光を照射された配線パターンと導通した配線パ
ターンを抽出する。配線が断線しておれば設計通りのパ
ターンに電圧が検出されず,また,設計通りでないパタ
ーンに電圧が検出されれば短絡があることになる(図
4,46) 。
Next, when the irradiation of the writing light beam is stopped and then the voltage application to the transparent electrode is stopped, the wiring pattern connected to the wiring irradiated with the writing light beam remains charged. At this time, the voltage distribution image acquired by the electro-optical image measurement unit (image processing unit 15) is imported into the control unit (Fig. 4, 44) and compared with the design data (Fig. 4, 45) to determine the writing light. A wiring pattern that is electrically connected to the irradiated wiring pattern is extracted. If the wiring is broken, the voltage is not detected in the pattern as designed, and if the voltage is detected in the pattern not as designed, there is a short circuit (Fig. 4, 46).

【0021】なお,基板を貫通する方向に延びる配線に
ついての導通試験は,基板搭載台に電圧を印加し,電気
光学式画像測定部で電圧分布像を測定することで試験が
できる。
The continuity test for the wiring extending in the direction penetrating the substrate can be conducted by applying a voltage to the substrate mounting table and measuring the voltage distribution image by the electro-optical image measuring section.

【0022】[0022]

【発明の効果】本発明によれば,探針を用いないで基板
の導通試験ができ,基板や配線を破壊しないで試験でき
るようになった。
According to the present invention, the continuity test of the substrate can be performed without using the probe, and the test can be performed without breaking the substrate or the wiring.

【図面の簡単な説明】[Brief description of drawings]

【図1】 本発明の原理説明図FIG. 1 is an explanatory view of the principle of the present invention.

【図2】 本発明の実施例を説明する断面図FIG. 2 is a sectional view illustrating an embodiment of the present invention.

【図3】 実施例の装置を構成するブロック図FIG. 3 is a block diagram of the apparatus of the embodiment.

【図4】 実施例の動作フローを示す図FIG. 4 is a diagram showing an operation flow of the embodiment.

【符号の説明】[Explanation of symbols]

1 電気光学効果と光導電性を有する結晶 2 透明電極でITO 電極 3 被試験基板 4 配線パターン 5 電源 6 基板搭載台 7 書込光光源 8 スキャナ 9 レンズ 10 読出光光源 11 偏光子と移相子 12 検光子 13 CCD カメラ 1 Crystal with electro-optic effect and photoconductivity 2 ITO electrode with transparent electrode 3 Substrate under test 4 Wiring pattern 5 Power supply 6 Board mounting stand 7 Writing light source 8 Scanner 9 Lens 10 Reading light source 11 Polarizer and retarder 12 Analyzer 13 CCD camera

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 基板に形成された配線の導通状態を試験
する装置であって,該基板に接触させる電気光学効果と
光導電性の両方の性質を持つ結晶と,該結晶の該基板と
は反対側の面に被着された透明電極と,該透明電極に接
続して電圧を印加する電源と,光導電性を示す波長の光
を被測定配線に該結晶を通して照射する書込光ビーム照
射部と,電気光学効果を示す波長の読出光を該結晶に照
射し,該結晶からの反射光像を観測する電気光学式画像
測定部とを有することを特徴とする基板試験装置。
1. A device for testing a conduction state of wiring formed on a substrate, comprising: a crystal having both electro-optical effect and photoconductivity, which is brought into contact with the substrate; and the substrate of the crystal. Irradiation of a transparent electrode adhered to the opposite surface, a power source connected to the transparent electrode to apply a voltage, and a writing light beam for irradiating the wiring to be measured with light having a wavelength exhibiting photoconductivity through the crystal. And an electro-optical image measuring unit for irradiating the crystal with a reading light having a wavelength exhibiting an electro-optical effect and observing a reflected light image from the crystal.
JP4210585A 1992-08-07 1992-08-07 Substrate test equipment Pending JPH0658975A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4210585A JPH0658975A (en) 1992-08-07 1992-08-07 Substrate test equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4210585A JPH0658975A (en) 1992-08-07 1992-08-07 Substrate test equipment

Publications (1)

Publication Number Publication Date
JPH0658975A true JPH0658975A (en) 1994-03-04

Family

ID=16591759

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4210585A Pending JPH0658975A (en) 1992-08-07 1992-08-07 Substrate test equipment

Country Status (1)

Country Link
JP (1) JPH0658975A (en)

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