JPH0655285A - Laser beam machining method and equipment using this method - Google Patents

Laser beam machining method and equipment using this method

Info

Publication number
JPH0655285A
JPH0655285A JP4211687A JP21168792A JPH0655285A JP H0655285 A JPH0655285 A JP H0655285A JP 4211687 A JP4211687 A JP 4211687A JP 21168792 A JP21168792 A JP 21168792A JP H0655285 A JPH0655285 A JP H0655285A
Authority
JP
Japan
Prior art keywords
laser beam
laser
workpiece
target
level
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4211687A
Other languages
Japanese (ja)
Inventor
Makoto Yamazaki
真 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advantest Corp
Original Assignee
Advantest Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advantest Corp filed Critical Advantest Corp
Priority to JP4211687A priority Critical patent/JPH0655285A/en
Publication of JPH0655285A publication Critical patent/JPH0655285A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To surely cut without giving thermal shock to the whole body to be machined by preliminarily heating a target position locally of the body to be machined with a laser beam of low level, and then executing cutting of the objective part with a laser beam of high level. CONSTITUTION:A laser beam 12 of a low level being not reached to cutting from a laser beam oscillator 13 irradiates the part preliminarily made to a target by focusing, and the temperature of the part being made as the target is increased and preliminarily heated. Due to this pre-heating, the temperature of the target part is increased, then the laser beam 12 of a high level is emitted from a laser beam source and the objective part is cut. Therefore, the target part can be only locally heated with the pre-heating, and a fusing possible part 10A can be made to the change of phase in a liquid like. So, the fusing possible part 10A can be surely cut, even if it is existed in a deep part of the IC. Further, the pre-heating is executed with the laser beam 12, only the target part is locally heated and the thermal shock is not given to whole of the body to be machined 10.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は例えばICの製造現場
に利用することができるレーザ加工方法及びこの加工方
法を用いたレーザ加工装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a laser processing method and a laser processing apparatus using this processing method which can be used, for example, in an IC manufacturing site.

【0002】[0002]

【従来の技術】IC化されたメモリの分野ではメモリセ
ルの不良を救済するために、冗長部分を設け、不良セル
が発生したラインを冗長部分のラインに置換え、これに
より良品として実用できるように処置する方法がある。
この救済処置を実行するために、従来よりレーザ加工装
置が実用されている。レーザ加工装置によりIC内に設
けられた溶断可能な部分(ヒューズ等)にレーザビーム
を収束させて照射し、IC内の溶断可能な部分を切断加
工し、救済処置を施している。
2. Description of the Related Art In the field of integrated memory, a redundant portion is provided in order to remedy a defective memory cell, and a line in which a defective cell is generated is replaced with a line in the redundant portion so that it can be used as a good product. There is a way to treat.
A laser processing apparatus has been conventionally put into practical use in order to carry out this remedy. A laser beam is converged by a laser processing apparatus and irradiated to a fusing part (fuse or the like) provided in the IC, the fusing part in the IC is cut, and a relief treatment is performed.

【0003】[0003]

【発明が解決しようとする課題】メモリの記憶容量は日
夜増加の一途をたどり、ICの集積度は益々高密度化さ
れている。従来は救済処置を行なうべく設けられる切断
加工を行なうべき部分は比較的ICの表面近くに設けら
れていた、然し乍らこの高密度化の影響により切断加工
すべき部分は次第に深部に移行する傾向にある。切断す
べき溶断可能部分がICの深部に移行するに従って切断
加工の確度が低下し、救済処置を実行できるか否かが問
われている。
The storage capacity of the memory is increasing day and night, and the degree of integration of ICs is becoming higher and higher. Conventionally, the portion to be cut, which is provided to perform the relief treatment, is provided relatively close to the surface of the IC. However, due to the effect of this high density, the portion to be cut tends to gradually move to the deep portion. . As the fusing part to be cut is moved to the deep part of the IC, the accuracy of the cutting process is lowered, and it is questioned whether or not the relief treatment can be executed.

【0004】この課題を解決すべき一つの方法として被
加工体全体を予め加熱し、溶断可能部分の温度を上昇さ
せた状態でレーザビームにより切断加工を実行する方法
が考えられている。然し乍ら被加工体の全体を加熱する
には被加工体を搭載し、被加工体をX−Y軸方向に移動
させ、被加工体の所望の位置にレーザビームを照射させ
るために設けられる移動台に、加熱装置を搭載しなけれ
ばならなくなる。移動台に加熱装置を搭載した場合には
移動台にも熱が加わり、移動する位置の精度が悪くなる
欠点がある。また被加工体の全体を加熱し所望の温度に
達するには時間が掛る欠点もある。また被加工体の全体
を加熱するから、加熱を不要とする部分も加熱してしま
い熱的衝撃を与えてしまう欠点もある。この発明の目的
は切断すべき部分がICの深部に設けられても切断加工
を確実に実行でき、然も被加工体の全体に熱的衝撃を与
えることがなく、更にレーザ加工装置を構成するX−Y
移動台に熱を加えることがないレーザ加工方法及びこの
加工方法を利用したレーザ加工装置を提供しようとする
ものである。
As one method for solving this problem, there is considered a method in which the entire workpiece is preheated and the cutting is performed by a laser beam in a state where the temperature of the fusingable portion is raised. However, in order to heat the entire work piece, the work piece is mounted, the work piece is moved in the X-Y axis directions, and a moving table is provided to irradiate a desired position of the work piece with a laser beam. In addition, the heating device will have to be installed. When the heating device is mounted on the moving table, heat is also applied to the moving table and the accuracy of the moving position is deteriorated. There is also a drawback that it takes time to heat the entire workpiece to reach a desired temperature. Further, since the whole of the object to be processed is heated, there is a drawback that a portion which does not require heating is also heated and a thermal shock is given. The object of the present invention is that the cutting process can be surely executed even if the portion to be cut is provided in the deep portion of the IC, and the thermal processing does not give a thermal shock to the whole body to be processed. XY
An object of the present invention is to provide a laser processing method that does not apply heat to a moving table and a laser processing apparatus that uses this processing method.

【0005】[0005]

【課題を解決するための手段】この発明では、レーザ発
振器又はその他の補助光源から切断加工には達しない低
レベルのレーザビーム又はその他の低レベルの光を予め
目標とする部分に収束させて照射し、目標とする部分の
温度を上昇させ予備加熱を行なわせる。この予備加熱に
より目標部分の温度を上昇させ、その後レーザビーム源
から高レベルのレーザビームを出射させて目的とする部
分を切断させる。
According to the present invention, a low-level laser beam or other low-level light that does not reach the cutting process from a laser oscillator or other auxiliary light source is focused and irradiated on a target portion in advance. Then, the temperature of the target portion is raised and preheating is performed. The temperature of the target portion is raised by this preheating, and then a high-level laser beam is emitted from the laser beam source to cut the target portion.

【0006】このレーザ加工方法によれば予備加熱によ
り目標部分だけを局部的に加熱することができ、溶断可
能部分を液状に相変化させることができる。よって溶断
可能部分がICの深部に存在しても確実に切断させるこ
とができる。然もレーザビーム又は補助光源の光によっ
て予備加熱するから、目標部分だけ局部的に加熱するこ
とができる。よって被加工体の全体に熱的な衝撃を与え
なくて済むことと、レーザ加工装置を構成するX−Y移
動台に熱を加えなくて済む。この結果X−Y移動台の位
置精度を悪化させることがなく、被加工体に対する位置
決精度を良好な状態に維持することができる。
According to this laser processing method, only the target portion can be locally heated by preheating, and the meltable portion can be changed into a liquid phase. Therefore, even if the meltable portion exists deep in the IC, it can be surely cut. Since the laser beam or the light from the auxiliary light source preheats, only the target portion can be locally heated. Therefore, it is not necessary to give a thermal shock to the entire object to be processed, and it is not necessary to apply heat to the XY moving table that constitutes the laser processing apparatus. As a result, it is possible to maintain the positioning accuracy of the work piece in a good state without deteriorating the positioning accuracy of the XY moving table.

【0007】[0007]

【実施例】図1にこの発明によるレーザ加工方法を説明
するための波形図を示す。横軸tは時間、縦軸Eはレー
ザビームのエネルギを示す。この発明では目標部分を溶
断させることのないエネルギE1 を持つ予備加熱用のレ
ーザビームAを被加工体に照射し、予備加熱を行なう。
予備加熱後、被加工体の温度が低下しない時間の範囲内
(約1ms程度)に切断加工に必要なエネルギE2 を持
つ切断用レーザビームBを照射し、目的とする部分を切
断させる。
DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 shows a waveform diagram for explaining a laser processing method according to the present invention. The horizontal axis t represents time, and the vertical axis E represents laser beam energy. In the present invention, the workpiece is irradiated with the laser beam A for preheating having the energy E 1 that does not melt the target portion, and preheating is performed.
After the preheating, a laser beam B for cutting having energy E 2 necessary for cutting is irradiated within a time period (about 1 ms) in which the temperature of the object to be processed does not decrease, and the target portion is cut.

【0008】図2にレーザ加工装置の一例を示す。図中
10は被加工体を示す。この被加工体10はX−Y移動
台11に搭載されX−Y方向に精度よく移動され、レー
ザビーム12の照射点を被加工体10の任意の位置に移
動できるように構成される。レーザビーム12はレーザ
発振器13から出射され、ミラー14と、ビームスプリ
ッタ15及び対物レンズ16を経て被加工体10に照射
される。対物レンズ16は被加工体10の目標位置に焦
点が合致される。つまり例えば図3に示すICの内部に
おいて深部に設けた溶解可能部分10Aに焦点が合致さ
れ、溶解可能部分10Aにエネルギを集中させる。この
エネルギの集中により溶解可能部分10Aとは異なる位
置に形成した配線パターンL1 ,L2 ,L3 を破損させ
ることなく、溶解可能部分10Aを予備加熱し、切断加
工が可能となる。
FIG. 2 shows an example of a laser processing apparatus. Reference numeral 10 in the figure denotes a workpiece. The workpiece 10 is mounted on an XY moving table 11 and is accurately moved in the XY directions so that the irradiation point of the laser beam 12 can be moved to an arbitrary position on the workpiece 10. The laser beam 12 is emitted from the laser oscillator 13, passes through the mirror 14, the beam splitter 15, and the objective lens 16, and is irradiated onto the workpiece 10. The objective lens 16 is focused on the target position of the workpiece 10. That is, for example, the dissolvable portion 10A provided deep inside the IC shown in FIG. 3 is focused and energy is concentrated on the dissolvable portion 10A. Due to this energy concentration, the meltable portion 10A can be preheated and cut without damaging the wiring patterns L 1 , L 2 , and L 3 formed at positions different from the meltable portion 10A.

【0009】ビームスプリッタ15はハーフミラーによ
って構成することができ、レーザ発振器13から出射さ
れるレーザビームの一部を入射光量検出器17で検出
し、バッファアンプ18を通じてAD変換器19に与
え、AD変換出力を制御器21に与え、制御器21によ
ってレーザ発振器13の発振強度を制御する。またビー
ムスプリッタ15は被加工体10からの反射光を分岐
し、反射光量検出器22で反射光量を測定し、バッファ
アンプ23を通じてAD変換器23に反射光量に比例し
た電圧信号を入力し、そのAD変換出力を制御器21に
与え、反射光量によってもレーザ発振器13の発振強度
を制御している。
The beam splitter 15 can be constituted by a half mirror, and a part of the laser beam emitted from the laser oscillator 13 is detected by an incident light amount detector 17 and is given to an AD converter 19 through a buffer amplifier 18 for AD conversion. The converted output is given to the controller 21, and the controller 21 controls the oscillation intensity of the laser oscillator 13. Further, the beam splitter 15 splits the reflected light from the workpiece 10, measures the reflected light amount with the reflected light amount detector 22, inputs a voltage signal proportional to the reflected light amount to the AD converter 23 through the buffer amplifier 23, and The AD conversion output is given to the controller 21, and the oscillation intensity of the laser oscillator 13 is also controlled by the amount of reflected light.

【0010】この発明によるレーザ加工装置では制御器
21に設けたシーケンス制御部21Aによって予備加熱
用レーザビームAに続いて所定の時間内に切断用レーザ
ビームBを出射するようにレーザ発振器13を制御す
る。このように予備加熱用レーザビームAと切断用レー
ザビームBを出射させることにより予備加熱用レーザビ
ームAによって目的とする溶断可能部分10A(図3)
を予備加熱して温度を上昇させておくことができ、この
予備加熱に続いて切断用レーザビームBを出射すること
により溶断可能部分10Aを確実に切断することができ
る。
In the laser processing apparatus according to the present invention, the sequence controller 21A provided in the controller 21 controls the laser oscillator 13 so as to emit the cutting laser beam B within a predetermined time following the preheating laser beam A. To do. By emitting the laser beam A for preheating and the laser beam B for cutting in this way, the target fusing part 10A by the laser beam A for preheating (FIG. 3)
Can be preheated to raise the temperature, and the cutting laser beam B is emitted following this preheating to reliably cut the fusing possible portion 10A.

【0011】図4はこの発明の変形実施例を示す。この
例では予備加熱用の光源に補助光源25を用いた場合を
示す。従ってこの場合にはミラー14はハーフミラーを
使用する。補助光源25としては赤外線光源或は白色光
源等を利用することができる。またこの例では補助光源
25とミラー14との間にシャッタ26を設け、シャッ
タ26を開閉制御して予備加熱に必要なエネルギを被加
工体10に与える構造とした場合を示す。従ってこの場
合には補助光源25は連続発光状態に維持させればよ
い。レーザ発振器13側にもシャッタを設けることもで
きる。レーザ発振器13側にシャッタを設けた場合には
レーザ発振器13はパルス状のレーザビームを発振する
レーザ発振器でなく連続レーザ発振器を用いることがで
きる。
FIG. 4 shows a modified embodiment of the present invention. In this example, the case where the auxiliary light source 25 is used as the light source for preheating is shown. Therefore, in this case, the mirror 14 uses a half mirror. As the auxiliary light source 25, an infrared light source or a white light source can be used. Further, in this example, a structure is shown in which a shutter 26 is provided between the auxiliary light source 25 and the mirror 14, and the shutter 26 is controlled to be opened and closed to provide the workpiece 10 with energy required for preheating. Therefore, in this case, the auxiliary light source 25 may be maintained in the continuous light emitting state. A shutter can also be provided on the laser oscillator 13 side. When a shutter is provided on the laser oscillator 13 side, the laser oscillator 13 can be a continuous laser oscillator instead of a laser oscillator that oscillates a pulsed laser beam.

【0012】図5はこの発明の更に他の実施例を示す。
この実施例では被加工体10の温度検出器27を設け、
予備加熱時に被加工体10の表面温度を計測し、被加工
体10の表面温度が所定の温度に達したことを検出し、
この検出信号を制御器21に与え、レーザ発振器13か
ら切断用レーザビームBを出射させ切断加工を行なわせ
るように構成した場合を示す。
FIG. 5 shows still another embodiment of the present invention.
In this embodiment, the temperature detector 27 of the workpiece 10 is provided,
The surface temperature of the workpiece 10 is measured during preheating, and it is detected that the surface temperature of the workpiece 10 reaches a predetermined temperature,
A case in which this detection signal is given to the controller 21 and the laser beam B for cutting is emitted from the laser oscillator 13 to perform cutting processing is shown.

【0013】温度検出器27は例えば赤外線センサを用
いることができる。反射光量検出器22に入射する反射
光の一部をビームスプリッタ28で温度検出器27に分
岐するように構成する。この実施例のように温度検出器
27を設けることにより予備加熱の適正状態を検出する
ことができる。よって予備加熱が不足の状態で切断加工
を行なうようなことがなく、切断加工の確度を高めるこ
とができる。
As the temperature detector 27, for example, an infrared sensor can be used. A part of the reflected light incident on the reflected light amount detector 22 is branched by the beam splitter 28 to the temperature detector 27. By providing the temperature detector 27 as in this embodiment, the proper state of preheating can be detected. Therefore, it is possible to increase the accuracy of the cutting process without performing the cutting process in the state where the preheating is insufficient.

【0014】図6はこの発明の更に他の実施例を示す。
この例では温度検出器27に加えて膜厚計29を設けた
場合を示す。膜厚計29を設けた場合には被加工体10
の表面に被着形成した透明な絶縁膜の膜厚を予め測定
し、絶縁膜の膜厚に応じて予備加熱用レーザビームA及
び切断用レーザビームBのエネルギを制御するように構
成することができる。
FIG. 6 shows still another embodiment of the present invention.
In this example, a film thickness meter 29 is provided in addition to the temperature detector 27. When the film thickness meter 29 is provided, the workpiece 10
The film thickness of the transparent insulating film deposited on the surface of the substrate can be measured in advance, and the energy of the preheating laser beam A and the cutting laser beam B can be controlled according to the film thickness of the insulating film. it can.

【0015】膜厚計29を動作させるためには膜厚測定
用に白色光源31を設ける。白色光源31の光をハーフ
ミラー14を通じて被加工体10に照射し、その反射光
により膜厚を検出する。膜厚測定方法には顕微分光干渉
膜厚測定法又は消光法エリプソメトリ等の方法がある。
この実施例のように温度検出器27と膜厚計29を設け
ることにより、被加工体10の表面に被着形成した絶縁
膜の厚みに応じて予備加熱用レーザビームA及び切断用
レーザビームBの各エネルギを調整するから、絶縁膜の
膜厚が厚いために被加工体10の温度が予備加熱時に所
定温度に上昇しないために切断が達せられないような事
故が起きることを防止することができる。
In order to operate the film thickness meter 29, a white light source 31 is provided for film thickness measurement. The light from the white light source 31 is applied to the workpiece 10 through the half mirror 14, and the film thickness is detected by the reflected light. Examples of the film thickness measuring method include a microscopic interference film thickness measuring method and a quenching method ellipsometry.
By providing the temperature detector 27 and the film thickness meter 29 as in this embodiment, the laser beam A for preheating and the laser beam B for cutting are provided according to the thickness of the insulating film deposited on the surface of the workpiece 10. Since each energy is adjusted, it is possible to prevent an accident in which cutting cannot be reached because the temperature of the workpiece 10 does not rise to a predetermined temperature during preheating due to the thick insulating film. it can.

【0016】[0016]

【発明の効果】以上説明したように、この発明によれば
IC内において切断加工すべき部分が存在し、この切断
加工すべき部分が高密度化のために深部に設けられたと
しても、光の照射による予備加熱を施し、この予備加熱
により切断加工すべき部分を予め液相化し、この状態で
切断用レーザビームBを照射して切断加工するから、切
断を確実に行なうことができる。
As described above, according to the present invention, there is a portion to be cut and processed in the IC, and even if the portion to be cut and processed is provided at a deep portion for high density, the optical Since the preheating is performed by irradiating, and the portion to be cut is liquefied in advance by this preheating, and the cutting laser beam B is irradiated in this state to perform the cutting, the cutting can be surely performed.

【0017】然も光のエネルギによって予備加熱したか
ら、レーザ加工装置を構成するX−Y移動台11に熱を
加えることがない。この結果X−Y移動台11の移動停
止位置の精度を悪くすることがなく、切断加工すべき部
分をレーザビーム12の焦点位置に合致させる作業を確
実に行なうことができる。また図5に示した実施例のよ
うに、温度検出器27を設けた場合は予備加熱による被
加工体の温度を監視することができる。よってこの場合
には、たまたま被加工体10の表面に厚い絶縁膜が形成
され、この絶縁膜のために目標部分の温度が予定した温
度に上昇しないまま切断加工し、切断が達せられない場
合が生じることを防止することができる。よって温度検
出器27を設けた場合には更に加工の信頼性を向上する
ことができる。
Since it is preheated by the energy of light, heat is not applied to the XY moving table 11 which constitutes the laser processing apparatus. As a result, the accuracy of the movement stop position of the X-Y moving base 11 is not deteriorated, and the work for cutting the portion to be cut can be surely performed at the focal position of the laser beam 12. When the temperature detector 27 is provided as in the embodiment shown in FIG. 5, it is possible to monitor the temperature of the workpiece by preheating. Therefore, in this case, a thick insulating film happens to be formed on the surface of the object to be processed 10. Due to this insulating film, cutting may be performed without the temperature of the target portion rising to the predetermined temperature, and the cutting may not be achieved. It can be prevented from occurring. Therefore, when the temperature detector 27 is provided, the processing reliability can be further improved.

【図面の簡単な説明】[Brief description of drawings]

【図1】この発明によるレーザ加工方法を説明するため
の波形図。
FIG. 1 is a waveform diagram for explaining a laser processing method according to the present invention.

【図2】この発明によるレーザ加工装置の一実施例を示
すブロック図。
FIG. 2 is a block diagram showing an embodiment of a laser processing apparatus according to the present invention.

【図3】この発明によるレーザ加工装置の動作を説明す
るための断面図。
FIG. 3 is a sectional view for explaining the operation of the laser processing apparatus according to the present invention.

【図4】この発明の変形実施例を示すブロック図。FIG. 4 is a block diagram showing a modified embodiment of the present invention.

【図5】この発明の変形実施例を示すブロック図。FIG. 5 is a block diagram showing a modified embodiment of the present invention.

【図6】この発明の変形実施例を示すブロック図。FIG. 6 is a block diagram showing a modified embodiment of the present invention.

【符号の説明】[Explanation of symbols]

10 被加工体 11 X−Y移動台 12 レーザビーム 13 レーザ発振器 14 ミラー(又はハーフミラ) 15 ビームスプリッタ 16 対物レンズ 17 入射光量検出器 18,23 バッファアンプ 19,24 AD変換器 25 補助光源 26 シャッタ 27 温度検出器 10 Workpiece 11 XY Moving Stage 12 Laser Beam 13 Laser Oscillator 14 Mirror (or Half Mira) 15 Beam Splitter 16 Objective Lens 17 Incident Light Amount Detector 18,23 Buffer Amplifier 19,24 AD Converter 25 Auxiliary Light Source 26 Shutter 27 Temperature detector

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 レーザ発振器を具備し、このレーザ発振
器から出射されるレーザビームを被加工体に照射し、被
加工体に対してレーザビームを介してエネルギを与え、
目標体を切断する等の加工を行なうレーザ加工方法にお
いて、被加工体に予め低レベルの予備加熱用の光を与
え、この低レベルのレーザビームにより被加工体の目標
位置を局部的に予備加熱し、この予備加熱の後に高レベ
ルのレーザビームを与え、目的とする部分の切断加工を
実行するレーザ加工方法。
1. A laser oscillator is provided, a laser beam emitted from this laser oscillator is applied to a workpiece, and energy is applied to the workpiece via the laser beam.
In a laser processing method that performs processing such as cutting a target body, a low-level preheating light is given to the workpiece in advance, and the target position of the workpiece is locally preheated by this low-level laser beam. Then, after this preheating, a high-level laser beam is applied to perform a cutting process on a target portion.
【請求項2】 レーザ発振器を具備し、このレーザ発振
器から出射されるレーザビームを被加工体に照射し、被
加工体に対してレーザビームを介してエネルギを与え、
目標体を切断する等の加工を行なうレーザ加工装置にお
いて、上記レーザ発振器は制御器により低レベルのレー
ザビームと高レベルのレーザビームを出射するように制
御され、低レベルのレーザビームにより被加工体の目標
位置を局部的に予備加熱し、この予備加熱の後に高レベ
ルのレーザビームを出射させ目的とする部分の切断加工
を実行するレーザ加工装置。
2. A laser oscillator is provided, a workpiece is irradiated with a laser beam emitted from the laser oscillator, and energy is given to the workpiece through the laser beam.
In a laser processing apparatus for performing processing such as cutting a target body, the laser oscillator is controlled by a controller to emit a low-level laser beam and a high-level laser beam, and the workpiece is processed by the low-level laser beam. A laser processing apparatus that locally preheats the target position of, and emits a high-level laser beam after the preheating to cut the target portion.
【請求項3】 レーザ発振器と、このレーザ発振器が出
射するレーザビームよりエネルギが小さい低レベルの光
を出射する補助光源とを具備し、この補助光源の光によ
って被加工体の目標位置を局部的に予備加熱し、この予
備加熱の後に上記レーザ発振器からレーザビームを出射
させ目的とする部分の切断加工を実行するレーザ加工装
置。
3. A laser oscillator and an auxiliary light source that emits a low-level light whose energy is smaller than that of a laser beam emitted by the laser oscillator, and the target position of the workpiece is locally irradiated by the light of the auxiliary light source. A laser processing apparatus which preheats to a target, and after the preheating, emits a laser beam from the laser oscillator to cut a target portion.
【請求項4】 請求項2及び3記載のレーザ加工装置に
おいて、被加工体から反射する光の量を測定して被加工
体の温度を測定する温度検出器を設け、予備加熱時に目
標位置の温度が所定温度に上昇したことを検出し、この
検出によりレーザ発振器から高レベルのレーザビームを
出射させ目的とする部分の切断加工を実行するレーザ加
工装置。
4. The laser processing apparatus according to claim 2 or 3, wherein a temperature detector for measuring the temperature of the object to be processed by measuring the amount of light reflected from the object to be processed is provided. A laser processing apparatus that detects that the temperature has risen to a predetermined temperature, and by this detection emits a high-level laser beam from a laser oscillator to cut a target portion.
JP4211687A 1992-08-07 1992-08-07 Laser beam machining method and equipment using this method Pending JPH0655285A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4211687A JPH0655285A (en) 1992-08-07 1992-08-07 Laser beam machining method and equipment using this method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4211687A JPH0655285A (en) 1992-08-07 1992-08-07 Laser beam machining method and equipment using this method

Publications (1)

Publication Number Publication Date
JPH0655285A true JPH0655285A (en) 1994-03-01

Family

ID=16609926

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4211687A Pending JPH0655285A (en) 1992-08-07 1992-08-07 Laser beam machining method and equipment using this method

Country Status (1)

Country Link
JP (1) JPH0655285A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100707961B1 (en) * 2006-07-12 2007-04-16 주식회사 쿠키혼 Method and apparatus for laser manufacturing
US9272364B2 (en) 2005-02-22 2016-03-01 Samsung Display Co., Ltd. Laser irradiation device and laser induced thermal imaging method
CN108539060A (en) * 2018-06-19 2018-09-14 武汉华星光电半导体显示技术有限公司 The method for making OLED display panel
KR20180109280A (en) * 2017-03-27 2018-10-08 (주)엔에스 Laser processing device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9272364B2 (en) 2005-02-22 2016-03-01 Samsung Display Co., Ltd. Laser irradiation device and laser induced thermal imaging method
KR100707961B1 (en) * 2006-07-12 2007-04-16 주식회사 쿠키혼 Method and apparatus for laser manufacturing
KR20180109280A (en) * 2017-03-27 2018-10-08 (주)엔에스 Laser processing device
CN108539060A (en) * 2018-06-19 2018-09-14 武汉华星光电半导体显示技术有限公司 The method for making OLED display panel
CN108539060B (en) * 2018-06-19 2020-10-27 武汉华星光电半导体显示技术有限公司 Method for manufacturing OLED display panel

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