JPH065361A - High frequency heating device - Google Patents

High frequency heating device

Info

Publication number
JPH065361A
JPH065361A JP17452092A JP17452092A JPH065361A JP H065361 A JPH065361 A JP H065361A JP 17452092 A JP17452092 A JP 17452092A JP 17452092 A JP17452092 A JP 17452092A JP H065361 A JPH065361 A JP H065361A
Authority
JP
Japan
Prior art keywords
heating
heated
temperature
electric field
strength
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17452092A
Other languages
Japanese (ja)
Other versions
JP2966653B2 (en
Inventor
Takeshi Kakigi
健史 柿木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP17452092A priority Critical patent/JP2966653B2/en
Publication of JPH065361A publication Critical patent/JPH065361A/en
Application granted granted Critical
Publication of JP2966653B2 publication Critical patent/JP2966653B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PURPOSE:To indirectly detect a heating temperature of an object to be heated with high accuracy by detecting electric field strength in a heating chamber. CONSTITUTION:A heating temperature computing means 6e for an object to be heated for control output computes a heating temperature of the object to be heated based on a data from a heating output computing means 6b obtained by computation of electric field strength obtained by a microwave absorbing member 4, a data from a weight detection circuit 6c by means of a weight detection sensor 5, and a data from an individual material specific heat constant storing means 6d, so as to control a high frequency heat source 2.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、被加熱物の加熱温度を
検出するために、加熱室に供給されるマイクロ波の加熱
室内における電界の強さを検出する手段を設けた高周波
加熱装置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high frequency heating apparatus provided with means for detecting the electric field strength of a microwave supplied to a heating chamber in the heating chamber in order to detect the heating temperature of an object to be heated. It is a thing.

【0002】[0002]

【従来の技術】従来、高周波加熱装置において被加熱物
の加熱温度を検出する手段として、間接的に、加熱室内
の雰囲気温度を温度センサで検出するもの、赤外線セン
サにより検出するもの、または、被加熱物に直接温度セ
ンサを挿入して直接的に検出するものがある。
2. Description of the Related Art Conventionally, as means for detecting the heating temperature of an object to be heated in a high-frequency heating device, indirectly, one which detects the ambient temperature in the heating chamber by a temperature sensor, one which detects it by an infrared sensor, or There is one in which a temperature sensor is directly inserted into a heated object to directly detect the temperature.

【0003】[0003]

【発明が解決しようとする課題】これらの検出手段を用
いて被加熱物の加熱温度を検出する場合、雰囲気温度検
出方式では、被加熱物の温度を加熱室内の空気を介して
間接的に検出するため、マグネトロンの冷却熱、ターン
テーブル用モータの熱等も同時に検出してしまい、誤差
が大きくなる。また、赤外線センサによる方式は、被加
熱物の表面の加熱温度しか検出できない。さらに、被加
熱物に直接温度センサを挿入する方式では、温度検出精
度は向上するが、衛生上または美観上好ましくなく、特
に、ターンテーブル方式の高周波加熱装置では、被加熱
物が回転するので、温度センサの接続線がからまり事実
上不可能である。
When the heating temperature of the object to be heated is detected using these detecting means, in the ambient temperature detecting method, the temperature of the object to be heated is indirectly detected via the air in the heating chamber. Therefore, the cooling heat of the magnetron, the heat of the turntable motor, etc. are also detected at the same time, and the error becomes large. In addition, the method using the infrared sensor can detect only the heating temperature of the surface of the object to be heated. Furthermore, in the method of directly inserting the temperature sensor into the object to be heated, the temperature detection accuracy is improved, but it is not preferable in terms of hygiene or aesthetics. It is practically impossible because the connection line of the temperature sensor is tangled.

【0004】本発明は、前記の課題を解決するためにな
されたもので、加熱室内の電界の強さを検出することに
より、被加熱物に直接温度センサを挿入することなく、
被加熱物の加熱温度を精度よく検出することを目的とす
る。
The present invention has been made to solve the above-mentioned problems, and detects the strength of the electric field in the heating chamber to eliminate the need to insert a temperature sensor directly into the object to be heated.
The object is to accurately detect the heating temperature of the object to be heated.

【0005】[0005]

【課題を解決するための手段】本発明の高周波加熱装置
では、加熱室の電界の強さを検出する手段を設け、検出
された電界の強さに基づいて被加熱物に発生する加熱出
力を求めるようにした。
In the high frequency heating apparatus of the present invention, means for detecting the strength of the electric field in the heating chamber is provided, and the heating output generated on the object to be heated is detected based on the detected strength of the electric field. I tried to ask.

【0006】[0006]

【作用】加熱室の電界の強さを検出する手段に発生した
熱量、あるいはこれを冷却するに要する熱量を演算する
ことにより、加熱室内の電界の強さを求めることができ
る。加熱室の電界の強さを検出すれば被加熱物の加熱出
力が求められる。被加熱物の加熱温度は、被加熱物の加
熱出力と重量との相関により求められる。
The strength of the electric field in the heating chamber can be obtained by calculating the quantity of heat generated in the means for detecting the strength of the electric field in the heating chamber or the quantity of heat required to cool the electric field. The heating output of the object to be heated can be obtained by detecting the strength of the electric field in the heating chamber. The heating temperature of the object to be heated is determined by the correlation between the heating output of the object to be heated and the weight.

【0007】[0007]

【実施例】被加熱物の加熱温度と被加熱物に消費される
加熱出力と被加熱物の重量には、
[Example] The heating temperature of the object to be heated, the heating output consumed by the object to be heated and the weight of the object to be heated are:

【0008】[0008]

【数1】 [Equation 1]

【0009】の関係式が成立ち、被加熱物の加熱温度を
求めるには、被加熱物に消費される加熱出力と被加熱物
の重量と被加熱物の材料による比熱がわかればよい。
In order to obtain the heating temperature of the object to be heated by the relational expression of, the heating output consumed by the object to be heated, the weight of the object to be heated, and the specific heat due to the material of the object to be heated may be known.

【0010】しかし、被加熱物に消費される加熱出力
は、高周波加熱装置の高周波熱源のマイクロ波出力が一
定であっても、被加熱物の種類,容積,形状等によっ
て、その発熱効率が大幅に変化するため、加熱出力を検
出する手段が必要である。
However, even if the microwave output of the high-frequency heat source of the high-frequency heating device is constant, the heating output consumed by the object to be heated is significantly high depending on the type, volume and shape of the object to be heated. Therefore, a means for detecting the heating output is required.

【0011】高周波加熱装置の高周波熱源から出力され
るマイクロ波は、被加熱物に吸収され加熱するが、その
残りのマイクロ波は加熱室に残留する。この残留マイク
ロ波は、高周波熱源から出力されるマイクロ波から被加
熱物に消費される加熱出力を差引いた値すなわち、
The microwave output from the high-frequency heat source of the high-frequency heating device is absorbed by the object to be heated and heated, but the remaining microwave remains in the heating chamber. This residual microwave is a value obtained by subtracting the heating output consumed by the object to be heated from the microwave output from the high-frequency heat source, that is,

【0012】[0012]

【数2】 [Equation 2]

【0013】となるので、加熱室内に設置した電界の強
さ検出手段により、その残留マイクロ波のエネルギを検
出すれば、(2)式の演算により上記の加熱出力を求め
ることができる。
Therefore, if the residual microwave energy is detected by the electric field strength detecting means installed in the heating chamber, the above heating output can be obtained by the calculation of the equation (2).

【0014】残留マイクロ波は、現在入手できるセンサ
としては、たとえばマイクロ波吸収材がある。残留マイ
クロ波は、加熱室に設置されたマイクロ波吸収材に吸収
され、それを加熱するので、この残留マイクロ波の電界
の強さは、マイクロ波吸収材の温度上昇値を測定するこ
とにより検出できる。なお、単なる電界強度計では、残
留マイクロ波の電位の傾きしか計測できない。
[0014] For the residual microwave, a currently available sensor is, for example, a microwave absorbing material. The residual microwave is absorbed by the microwave absorber installed in the heating chamber and heats it, so the strength of the electric field of this residual microwave is detected by measuring the temperature rise value of the microwave absorber. it can. Note that a simple electric field strength meter can measure only the slope of the potential of the residual microwave.

【0015】図3は、その一例として、被加熱物の容量
を変化させた場合の加熱出力とマイクロ波吸収材の温度
上昇値の関係を示すグラフである。
FIG. 3 is a graph showing the relationship between the heating output and the temperature rise value of the microwave absorbent when the capacity of the object to be heated is changed, as an example.

【0016】以下、本発明による一実施例を図1および
図2に基づいて説明する。
An embodiment according to the present invention will be described below with reference to FIGS. 1 and 2.

【0017】図1は本発明の一実施例の要部断面図であ
る。
FIG. 1 is a sectional view of the essential portions of an embodiment of the present invention.

【0018】図1において、1は被加熱物7を収容する
加熱室、2はたとえばマグネトロンのような高周波熱
源、3は高周波熱源2からのマイクロ波を加熱室1に送
る導波管、4は電界の強さ検出センサとしてのマイクロ
波吸収材であり加熱室1内の壁面の適宜の箇所に設けら
れ、5は重量検出センサであり被加熱物7の下方に置か
れ、6は制御手段であり、マイクロ波吸収材4および重
量検出センサ5からのデータが入力され高周波熱源2を
制御する。8はターンテーブルでありその駆動手段は省
略されている。
In FIG. 1, 1 is a heating chamber for containing an object 7 to be heated, 2 is a high-frequency heat source such as a magnetron, 3 is a waveguide for sending microwaves from the high-frequency heat source 2 to the heating chamber 1, and 4 is a waveguide. A microwave absorber as an electric field strength detection sensor is provided at an appropriate position on the wall surface in the heating chamber 1, 5 is a weight detection sensor and is placed below the object to be heated 7, and 6 is a control means. Yes, data from the microwave absorber 4 and the weight detection sensor 5 are input to control the high frequency heat source 2. Reference numeral 8 is a turntable, and its driving means is omitted.

【0019】図2は図1の制御手段6のブロック図であ
る。
FIG. 2 is a block diagram of the control means 6 of FIG.

【0020】図2において、図1と同様の部分には同一
の符号を付してある。制御手段6は、マイクロ波吸収材
4からの温度検出記憶回路6a、これに接続される加熱
出力演算手段6b、重量検出センサ5に接続される重量
検出回路6c、被加熱物の材料別比熱定数記憶手段6
d、これらのデータを処理する被加熱物の加熱温度演算
手段6e等から構成され、これにより高周波熱源2を制
御する。
In FIG. 2, the same parts as those in FIG. 1 are designated by the same reference numerals. The control means 6 includes a temperature detection storage circuit 6a from the microwave absorber 4, a heating output calculation means 6b connected to the microwave absorption material 4, a weight detection circuit 6c connected to the weight detection sensor 5, and a specific heat constant for each material to be heated. Storage means 6
d, a heating temperature calculation means 6e for processing the data to be heated, and the like, which controls the high-frequency heat source 2.

【0021】まず、使用者が被加熱物7を加熱室1のタ
ーンテーブル8に載せ、加熱スイッチおよび材料選択ス
イッチ(いずれも図示されていない)を押すと、高周波
加熱装置は、図1の重量検出センサ5およびその検出回
路6cにより、その重量を検出する。また、マイクロ波
吸収材4およびその温度検出記憶回路6aにより、マイ
クロ波吸収材4の温度を測定し、それを記憶する。
First, when the user places the object 7 to be heated on the turntable 8 of the heating chamber 1 and presses the heating switch and the material selection switch (neither is shown), the high-frequency heating apparatus is operated by the weight of FIG. The weight is detected by the detection sensor 5 and its detection circuit 6c. Further, the microwave absorber 4 and its temperature detection storage circuit 6a measure the temperature of the microwave absorber 4 and store it.

【0022】その後、高周波加熱装置は高周波熱源2か
らマイクロ波を発生し、そのマイクロ波は導波管3を通
じて加熱室1に送られ、被加熱物7に吸収され加熱を開
始するとともに、マイクロ波吸収材4も残留マイクロ波
により加熱される。
After that, the high-frequency heating device generates microwaves from the high-frequency heat source 2, the microwaves are sent to the heating chamber 1 through the waveguide 3, are absorbed by the object 7 to be heated, and start heating, The absorber 4 is also heated by the residual microwave.

【0023】そして、加熱開始から一定時間後、高周波
加熱装置は再びマイクロ波吸収材4およびその温度検出
記憶回路6aにより、マイクロ波吸収材4の温度を検出
し、予め記憶された加熱開始時のマイクロ波吸収材4の
温度との差を、加熱出力演算手段6bにより演算する。
ここで、この演算されたマイクロ波吸収材4の温度上昇
値は、前述のように、加熱出力と図3のような関係があ
り、この温度上昇値から加熱出力演算手段6bは、被加
熱物に消費される加熱出力を演算できる。
After a lapse of a certain time from the start of heating, the high-frequency heating device again detects the temperature of the microwave absorber 4 by the microwave absorber 4 and its temperature detection storage circuit 6a, and stores the temperature stored in advance at the start of heating. The difference from the temperature of the microwave absorbing material 4 is calculated by the heating output calculating means 6b.
Here, the calculated temperature rise value of the microwave absorbent 4 has a relationship with the heating output as shown in FIG. 3 as described above. It is possible to calculate the heating output consumed by.

【0024】次に、高周波加熱装置は、被加熱物の加熱
温度演算手段6eにおいて、前記の加熱出力演算手段6
bの加熱出力値と、加熱開始時に記憶した重量値と、さ
らに精度を要求する場合は、被加熱物の比熱のようなデ
ータを、材料別比熱定数記憶手段6dから入力すること
により、前述の式(1)を用い被加熱物の加熱温度を演
算する。
Next, in the high-frequency heating apparatus, the heating temperature calculation means 6e for the object to be heated is the above-mentioned heating output calculation means 6
When the heating output value of b, the weight value stored at the start of heating, and further accuracy are required, data such as the specific heat of the object to be heated is input from the material-specific specific heat constant storage means 6d, thereby The heating temperature of the object to be heated is calculated using the equation (1).

【0025】次に、マイクロ波吸収材の発熱を冷却する
熱量から電界の強さを求める実施例について、前述の実
施例と対比して説明する。
Next, an embodiment in which the strength of the electric field is obtained from the amount of heat for cooling the heat generated by the microwave absorbent will be described in comparison with the above-mentioned embodiment.

【0026】前述の実施例では、マイクロ波吸収材を用
いて加熱室内の電界の強さを検出する場合、そのマイク
ロ波吸収材の単位時間当たりの温度上昇値を検出し電界
の強さを算出する方法を用いるが、この方式では加熱中
にマイクロ波吸収材の温度が常に上昇し、長時間の加熱
条件において、マイクロ波吸収材は過熱してしまい、破
壊に到る不具合がある。
In the above-mentioned embodiment, when the strength of the electric field in the heating chamber is detected using the microwave absorbing material, the temperature rise value of the microwave absorbing material per unit time is detected and the strength of the electric field is calculated. However, in this method, the temperature of the microwave absorber constantly rises during heating, and the microwave absorber is overheated under a long-time heating condition, resulting in destruction.

【0027】また、一般的に現在入手できるマイクロ波
吸収材のマイクロ波吸収時の温度上昇値は、温度特性を
もっており、電界の強さに換算する場合その特性を考慮
しなければならず、その換算時に検出誤差を生じる。
Further, the temperature rise value of the microwave absorbers currently available at the time of microwave absorption generally has a temperature characteristic, which must be taken into consideration when converting to the strength of the electric field. A detection error will occur during conversion.

【0028】加熱室の電界の強さを検出する手段とし
て、マイクロ波吸収材の温度上昇値を検出する代わり
に、その温度上昇を妨げる冷却手段を制御し、その制御
量すなわち冷却熱量を検出することにより、等価的にマ
イクロ波吸収材の温度上昇値が検出可能である。
As means for detecting the strength of the electric field in the heating chamber, instead of detecting the temperature rise value of the microwave absorbing material, the cooling means for preventing the temperature rise is controlled and the control amount, that is, the cooling heat amount is detected. As a result, the temperature rise value of the microwave absorber can be equivalently detected.

【0029】マイクロ波吸収材の温度上昇値は、The temperature rise value of the microwave absorber is

【0030】[0030]

【数3】 [Equation 3]

【0031】また、(3)式のマイクロ波吸収材の温度
上昇値は、
The temperature rise value of the microwave absorbing material of the formula (3) is

【0032】[0032]

【数4】 [Equation 4]

【0033】の関係式が成立つ。The relational expression of is satisfied.

【0034】従来のマイクロ波吸収材の温度上昇値の検
出方法は、(4)式において、冷却熱量を自然放熱によ
る一定のものにし、その条件にてマイクロ波吸収材の温
度とその周囲温度を、たとえば、サーミスタ等の温度セ
ンサで検出するものであった。
In the conventional method of detecting the temperature rise value of the microwave absorbing material, the cooling heat quantity is made constant by natural heat dissipation in the equation (4), and the temperature of the microwave absorbing material and its ambient temperature are set under the condition. For example, it is detected by a temperature sensor such as a thermistor.

【0035】この実施例では、(4)式の冷却熱量を、
冷却手段を制御する手段により加熱熱量と同一になるよ
うに制御、すなわち、マイクロ波吸収材の加熱温度を0
にし、その冷却熱量を検出することにより、等価的にマ
イクロ波吸収材の温度上昇値を求めるものである。
In this embodiment, the cooling heat quantity of the equation (4) is
The cooling means is controlled so as to be the same as the amount of heat for heating, that is, the heating temperature of the microwave absorbing material is set to 0.
Then, the temperature rise value of the microwave absorbing material is equivalently obtained by detecting the cooling heat amount.

【0036】図4はこの実施例による高周波加熱装置の
要部断面図である。図1と同様な部分には同一の符号を
付してある。図4において図1と異なるところは、マイ
クロ波吸収材温度測定手段11、マイクロ波吸収材周辺
温度測定手段12、マイクロ波吸収材冷却手段13を設
けてあることであり、制御手段10の内容は図1の制御
手段6とは異なる。
FIG. 4 is a sectional view of the main part of the high frequency heating apparatus according to this embodiment. The same parts as those in FIG. 1 are designated by the same reference numerals. 4 is different from FIG. 1 in that microwave absorber temperature measuring means 11, microwave absorber ambient temperature measuring means 12, and microwave absorber cooling means 13 are provided. It is different from the control means 6 of FIG.

【0037】図5は、図4の制御手段10およびその周
辺のブロック図である。
FIG. 5 is a block diagram of the control means 10 in FIG. 4 and its peripherals.

【0038】図5において、高周波熱源2、マイクロ波
吸収材温度測定手段11、マイクロ波吸収材周辺温度測
定手段12、マイクロ波吸収材冷却手段13等が制御手
段10に接続されている。また、制御手段10の内部に
は、マイクロ波吸収材温度検出手段10a、マイクロ波
吸収材周辺温度検出手段10b、それらの温度比較回路
10c、冷却量制御手段10d、冷却量検出手段10
e、冷却量検出手段10eからの情報による電界の強さ
演算手段10f等が設けられている。
In FIG. 5, a high frequency heat source 2, a microwave absorber temperature measuring means 11, a microwave absorber ambient temperature measuring means 12, a microwave absorber cooling means 13 and the like are connected to the control means 10. Further, inside the control means 10, the microwave absorbing material temperature detecting means 10a, the microwave absorbing material surrounding temperature detecting means 10b, their temperature comparing circuit 10c, the cooling amount controlling means 10d, the cooling amount detecting means 10 are provided.
e, an electric field strength calculation means 10f based on information from the cooling amount detection means 10e, and the like are provided.

【0039】まず、使用者が被加熱物7を加熱室1のタ
ーンテーブル8に載せ、加熱スイッチおよび材料選択ス
イッチ(いずれも図示されていない)を押すと、高周波
加熱装置は図4のマイクロ波吸収材4の温度を、マイク
ロ波吸収材温度測定手段11およびその温度検出手段1
0aにより、また、そのときのマイクロ波吸収材4の周
辺温度を、マイクロ波吸収材周辺温度測定手段12およ
びその温度検出回路12bにより検出する。その後、高
周波加熱装置は高周波熱源2からマイクロ波を発生し、
そのマイクロ波は導波管3を通じて加熱室1に送られ、
被加熱物7に吸収され加熱を開始するとともに、マイク
ロ波吸収材4も残留マイクロ波により加熱される。
First, when the user mounts the object 7 to be heated on the turntable 8 of the heating chamber 1 and presses the heating switch and the material selection switch (neither is shown), the high frequency heating apparatus is operated by the microwave of FIG. The temperature of the absorbing material 4 is measured by the microwave absorbing material temperature measuring means 11 and its temperature detecting means 1.
0a, and the ambient temperature of the microwave absorber 4 at that time is detected by the microwave absorber ambient temperature measuring means 12 and its temperature detection circuit 12b. After that, the high frequency heating device generates microwaves from the high frequency heat source 2,
The microwave is sent to the heating chamber 1 through the waveguide 3,
While being absorbed by the object 7 to be heated and starting heating, the microwave absorbing material 4 is also heated by the residual microwave.

【0040】加熱中に高周波加熱装置は、常にマイクロ
波吸収材4の温度とその周辺温度を温度比較回路10c
により比較し、マイクロ波吸収材の温度がその周辺温度
より高くなると、その温度比較回路10cは、その温度
差に比例する電圧値(図6参照)を次の冷却量制御手段
10dに送信する。図6はマイクロ波吸収材の温度とそ
の周辺温度との温度差と、温度比較回路10cの出力電
圧との関係を示すグラフである。
During heating, the high-frequency heating device always compares the temperature of the microwave absorber 4 and its surrounding temperature with the temperature comparison circuit 10c.
When the temperature of the microwave absorber becomes higher than the ambient temperature, the temperature comparison circuit 10c transmits a voltage value (see FIG. 6) proportional to the temperature difference to the next cooling amount control means 10d. FIG. 6 is a graph showing the relationship between the temperature difference between the microwave absorber and its ambient temperature and the output voltage of the temperature comparison circuit 10c.

【0041】冷却量制御手段10dは、入力されたその
電圧値により、マイクロ波吸収材冷却手段13(たとえ
ば、冷却ファン、ペルチェ効果素子等)を駆動し、マイ
クロ波吸収材4を冷却するが、このときに高周波加熱装
置は、マイクロ波吸収材温度測定手段11、その温度検
出手段10a、マイクロ波吸収材周辺温度測定手段1
2、その温度検出手段12b、およびそれらの温度を比
較する温度比較回路10cにより、常時マイクロ波吸収
材4とその周辺温度を比較し、その温度差を比例電圧値
として冷却量制御手段10dに入力する。
The cooling amount control means 10d drives the microwave absorbing material cooling means 13 (for example, a cooling fan, a Peltier effect element, etc.) by the input voltage value to cool the microwave absorbing material 4. At this time, the high-frequency heating device includes the microwave absorbent temperature measuring means 11, the temperature detecting means 10a, and the microwave absorbent surrounding temperature measuring means 1.
2. The temperature detecting means 12b and the temperature comparing circuit 10c for comparing the temperatures are constantly compared between the microwave absorber 4 and its surrounding temperature, and the temperature difference is input to the cooling amount control means 10d as a proportional voltage value. To do.

【0042】冷却量制御手段10dは、その比例電圧値
が0電圧値になるまで、マイクロ波吸収材冷却手段13
によりマイクロ波吸収材4の冷却を続ける。すなわち、
この高周波加熱装置は、マイクロ波吸収材4の温度とそ
の周辺温度との差が常に0になるように制御するが、こ
れは、マイクロ波吸収材4の加熱熱量と冷却熱量が常に
同一に制御されることを意味する。
The cooling amount control means 10d keeps the microwave absorbing material cooling means 13 until the proportional voltage value becomes 0 voltage value.
Thus, the cooling of the microwave absorbing material 4 is continued. That is,
This high-frequency heating device controls so that the difference between the temperature of the microwave absorbing material 4 and its surrounding temperature is always 0. This is because the heating heat amount and the cooling heat amount of the microwave absorbing material 4 are always controlled to be the same. Means to be done.

【0043】一方、この冷却量制御手段10dは、その
制御した冷却量(たとえば、ファンの回転数とその駆動
時間の積、あるいはペルチェ効果素子の電力等)に比例
した電圧値を、次の電界の強さ演算手段10fに出力す
る。この電圧値はマイクロ波吸収材4の加熱熱量と比例
するので、この演算手段10fは、予め設定された、た
とえば、図7のような、冷却熱量(=加熱熱量)と電界
の強さのデータにより、加熱室の電界の強さを演算す
る。
On the other hand, the cooling amount control means 10d supplies a voltage value proportional to the controlled cooling amount (for example, the product of the rotation speed of the fan and its driving time or the power of the Peltier effect element) to the next electric field. To the strength calculation means 10f. Since this voltage value is proportional to the amount of heating heat of the microwave absorbing material 4, the calculating means 10f has preset cooling heat amount (= heating heat amount) and electric field strength data as shown in FIG. 7, for example. The strength of the electric field in the heating chamber is calculated by

【0044】なお、この高周波加熱装置に重量、比熱等
のデータを入力できることはもちろんである。
Needless to say, data such as weight and specific heat can be input to this high-frequency heating device.

【0045】[0045]

【発明の効果】本発明によれば、加熱開始時被加熱物の
重量およびさらに材料の種類によるデータを入力するこ
とにより、直接被加熱物に温度センサを挿入することな
く、被加熱物の加熱温度を検出することができるため、
豆腐,卵等の事実上温度センサの挿入不可能な被加熱物
の加熱温度の検出に特に適している。また、本発明の加
熱温度検出方式は、被加熱物の一点を温度センサで検出
する方式や、被加熱物の表面温度を検出する方式とは異
なり、被加熱物に消費される加熱出力と重量と比熱のよ
うな被加熱物に関するデータから演算する方式であるた
め、被加熱物の平均的な加熱温度であり、グラタン,シ
チュー等の熱伝達率の悪い被加熱物の温度検出にも適し
ている。
According to the present invention, the weight of the object to be heated at the start of heating and the data depending on the kind of the material are input, so that the object to be heated can be heated without directly inserting the temperature sensor into the object to be heated. Since it can detect the temperature,
It is particularly suitable for detecting the heating temperature of objects to be heated, such as tofu and eggs, where a temperature sensor cannot be inserted. Further, the heating temperature detection method of the present invention is different from the method of detecting one point of the object to be heated by the temperature sensor and the method of detecting the surface temperature of the object to be heated, and the heating output and weight consumed by the object to be heated. Since it is a method that calculates from data related to the object to be heated such as specific heat, it is an average heating temperature of the object to be heated, and is also suitable for detecting the temperature of the object to be heated with poor heat transfer coefficient such as gratin and stew. There is.

【0046】また、本発明で用いられるマイクロ波吸収
材の材料である高誘電率体は、検出精度の面では一般的
にその温度特性が悪く、その温度上昇値により電界の強
さを検出するときに、この影響を大きく受けてしまう
が、これを冷却してマイクロ波吸収材の温度が常に一定
であるようにすることにより、マイクロ波の材料の温度
特性による検出誤差がなくなる。
The high dielectric constant material, which is the material of the microwave absorbing material used in the present invention, generally has poor temperature characteristics in terms of detection accuracy, and the strength of the electric field is detected by the temperature rise value. At times, this effect is greatly affected, but by cooling this so that the temperature of the microwave absorbing material is always constant, there is no detection error due to the temperature characteristics of the microwave material.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例の要部断面図である。FIG. 1 is a sectional view of an essential part of an embodiment of the present invention.

【図2】図1の制御手段のブロック図である。FIG. 2 is a block diagram of a control unit shown in FIG.

【図3】加熱出力とマイクロ波吸収材の温度上昇値との
関係を示すグラフである。
FIG. 3 is a graph showing a relationship between a heating output and a temperature rise value of a microwave absorbent.

【図4】本発明の他の実施例の要部断面図である。FIG. 4 is a cross-sectional view of an essential part of another embodiment of the present invention.

【図5】図4の制御回路のブロック図である。5 is a block diagram of the control circuit of FIG.

【図6】マイクロ波吸収材の温度とその周辺温度との差
と、温度比較回路の出力電圧の関係を示すグラフであ
る。
FIG. 6 is a graph showing the relationship between the difference between the temperature of the microwave absorbing material and its surrounding temperature and the output voltage of the temperature comparison circuit.

【図7】マイクロ波吸収材の冷却熱量と加熱室の電界の
強さとの関係を示すグラフである。
FIG. 7 is a graph showing the relationship between the amount of cooling heat of the microwave absorber and the strength of the electric field in the heating chamber.

【符号の説明】[Explanation of symbols]

1 加熱室 2 高周波熱源 3 導波管 4 マイクロ波吸収材 5 重量検出センサ 6 制御手段 6a 温度検出記憶回路 6b 加熱出力演算手段 6c 重量検出回路 6d 材料別比熱定数記憶手段 6e 被加熱物の加熱温度演算手段 7 被加熱物 8 ターンテーブル 10 制御手段 10a マイクロ波吸収材温度検出手段 10b マイクロ波吸収材周辺温度検出手段 10c 温度比較回路 10d 冷却量制御手段 10e 冷却量検出手段 10f 電界の強さ演算手段 11 マイクロ波吸収材温度測定手段 12 マイクロ波吸収材周辺温度測定手段 13 マイクロ波吸収材冷却手段 DESCRIPTION OF SYMBOLS 1 Heating chamber 2 High frequency heat source 3 Waveguide 4 Microwave absorber 5 Weight detection sensor 6 Control means 6a Temperature detection storage circuit 6b Heating output calculation means 6c Weight detection circuit 6d Material specific heat constant storage means 6e Heating temperature of heated object Calculation means 7 Object to be heated 8 Turntable 10 Control means 10a Microwave absorber temperature detection means 10b Microwave absorber ambient temperature detection means 10c Temperature comparison circuit 10d Cooling amount control means 10e Cooling amount detecting means 10f Electric field strength calculating means 11 Microwave Absorber Temperature Measuring Means 12 Microwave Absorber Surrounding Temperature Measuring Means 13 Microwave Absorber Cooling Means

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】 被加熱物を収容する加熱室と、加熱室に
給電するマイクロ波エネルギを発生させる高周波熱源
と、加熱室の電界の強さを検出する手段と、検出された
電界の強さに基づいて被加熱物で消費する加熱出力を演
算する手段と、その結果より被加熱物の加熱温度を演算
する手段を有する高周波加熱装置。
1. A heating chamber for containing an object to be heated, a high-frequency heat source for generating microwave energy supplied to the heating chamber, a means for detecting the electric field strength of the heating chamber, and a detected electric field strength. A high-frequency heating device having means for calculating a heating output consumed by the object to be heated based on the above, and means for calculating a heating temperature of the object to be heated from the result.
【請求項2】 被加熱物を収容する加熱室と、加熱室に
給電するマイクロ波エネルギを発生させる高周波熱源
と、加熱室の電界の強さを検出する手段と、被加熱物の
重量を検出する手段と、検出された電界の強さに基づい
て被加熱物で消費する加熱出力を演算する手段と、これ
らの結果より被加熱物の加熱温度を演算する出力を有す
る高周波加熱装置。
2. A heating chamber for containing an object to be heated, a high-frequency heat source for generating microwave energy to be fed to the heating chamber, a means for detecting the strength of an electric field in the heating chamber, and a weight for the object to be heated. A high-frequency heating apparatus having: means for calculating, a means for calculating a heating output consumed by the object to be heated based on the detected strength of the electric field, and an output for calculating a heating temperature of the object to be heated from these results.
【請求項3】 電界の強さを検出する出力は、マイクロ
波吸収材を用い加熱中のその温度上昇値を検出すること
により電界の強さを検出する請求項1または2記載の高
周波加熱装置。
3. The high-frequency heating device according to claim 1, wherein the output for detecting the strength of the electric field detects the strength of the electric field by detecting the temperature rise value of the microwave absorbent during heating. .
【請求項4】 被加熱物を収容する加熱室と、加熱室に
給電するマイクロ波エネルギを発生させる高周波熱源
と、加熱室の電界の強さを検出する手段と、この電界の
強さを検出する手段の冷却手段と、この冷却手段を制御
する手段およびこの冷却熱量により加熱室内の電界の強
さを演算する手段を有する高周波加熱装置。
4. A heating chamber for accommodating an object to be heated, a high frequency heat source for generating microwave energy supplied to the heating chamber, a means for detecting the strength of an electric field in the heating chamber, and a strength of the electric field is detected. A high-frequency heating device having a cooling means for controlling the cooling means, a means for controlling the cooling means, and a means for calculating the strength of the electric field in the heating chamber by the cooling heat amount.
【請求項5】 電界の強さを検出する手段としてマイク
ロ波吸収材を用い、加熱中のその温度を検出する手段お
よびその周辺温度を検出する手段を有する請求項4記載
の高周波加熱装置。
5. The high frequency heating apparatus according to claim 4, wherein a microwave absorbing material is used as a means for detecting the strength of the electric field, and a means for detecting its temperature during heating and a means for detecting its ambient temperature are provided.
JP17452092A 1992-04-21 1992-07-01 High frequency heating equipment Expired - Fee Related JP2966653B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17452092A JP2966653B2 (en) 1992-04-21 1992-07-01 High frequency heating equipment

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP10080892 1992-04-21
JP4-100808 1992-04-21
JP17452092A JP2966653B2 (en) 1992-04-21 1992-07-01 High frequency heating equipment

Publications (2)

Publication Number Publication Date
JPH065361A true JPH065361A (en) 1994-01-14
JP2966653B2 JP2966653B2 (en) 1999-10-25

Family

ID=26441768

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17452092A Expired - Fee Related JP2966653B2 (en) 1992-04-21 1992-07-01 High frequency heating equipment

Country Status (1)

Country Link
JP (1) JP2966653B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5761964A (en) * 1995-10-09 1998-06-09 Asmo Co., Ltd. Rotary output transmitting structure with a slidable washer
US6003397A (en) * 1995-10-09 1999-12-21 Asmo Co., Ltd. Rotary output transmitting structure with a slidable washer
JP2015041561A (en) * 2013-08-23 2015-03-02 株式会社東芝 Microwave heating device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5761964A (en) * 1995-10-09 1998-06-09 Asmo Co., Ltd. Rotary output transmitting structure with a slidable washer
US6003397A (en) * 1995-10-09 1999-12-21 Asmo Co., Ltd. Rotary output transmitting structure with a slidable washer
JP2015041561A (en) * 2013-08-23 2015-03-02 株式会社東芝 Microwave heating device

Also Published As

Publication number Publication date
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