JPH0641753A - Plasma cvd device - Google Patents

Abstract

PURPOSE:To provide the plasma CVD device which can suppress the adhesion of dust onto base bodies to be formed with films more inexpensively than heretofore without drastically degrading the operation factor of the device. CONSTITUTION:This plasma CVD device forms films on the base bodies ST placed on electrode parts 51, 52 by introducing gaseous raw materials between the opposite electrode parts 21, 51 and 22, 52 arranged in a film forming chamber 1 and impressing a voltage to these gases, then executing plasma treatment. The electrode parts 21, 22, 51, 52 and heater 3 are enclosed with members 7, 8, 9 and 10 for preventing film deposition disposed exchangeably on the side inner than the inside wall of the film forming chamber over approximately the entire surface. The members 7, 9 for preventing the deposition are provided with opening/closing parts for putting the base bodies in and out.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention introduces a raw material gas between opposed electrode parts arranged in a film forming chamber, applies a voltage between the both electrode parts to turn the gas into plasma, and The present invention relates to a plasma CVD apparatus that exposes a substrate placed on one of the electrode parts to the plasma to form a film on the substrate.

[0002]

2. Description of the Related Art When performing a film forming operation on a substrate in such a plasma CVD apparatus, at the same time, a film is formed on the inner wall of the film forming chamber exposed to the plasma region, the electrode portion, etc.
The film formed on the portion outside the substrate gradually becomes thicker as the film formation is repeated, and finally peels off to become dust, which is poured onto the substrate. As a result, defects occur in the film formed on the substrate, and the final product using this defective film becomes a defective product.

For this reason, conventionally, a film deposition plate has been attached to the inner wall of a film forming chamber in a plasma CVD apparatus, and the deposition plate has been replaced with a new one after a certain period of operation of the apparatus.

[0004]

However, in practice, the deposition preventive plate could not be completely installed over the entire inner wall of the film forming chamber, and the exposed portion was left. And the peeling of the film attached to such a site could not be prevented. Therefore, a large-scale work of removing and cleaning the adhered film on the entire inner wall of the film forming chamber has to be performed regularly, and this work requires a large amount of expense and a long-term operation stop of the apparatus.

Further, as described above, the film adhesion also occurs on the electrode portion exposed to the plasma, the support tray of the substrate and the like, and dust is also generated from these, but no countermeasure has been taken. Therefore, the present invention is a plasma CVD that can suppress dust adhesion to a substrate to be formed on a film at a lower cost than before, and can suppress the operating rate of the apparatus without significantly lowering it.
An object is to provide a device.

[0006]

This problem of the present invention is solved by surrounding the plasma region with a film deposition member which is exchangeably arranged inside the inner wall of the film forming chamber. A first plasma CVD apparatus according to the present invention introduces a raw material gas between opposing electrode parts arranged in a film forming chamber, applies a voltage between the two electrode parts to convert the gas into plasma, and In a plasma CVD apparatus for exposing a substrate placed on one of the two electrode portions to the plasma to form a film on the substrate, for controlling the temperature of the substrate arranged in parallel with the electrode portion on which the both electrode portions and the substrate are arranged. The heater is entirely or substantially entirely surrounded by a film deposition member which is replaceably arranged on the inner side of the inner wall of the film formation chamber, and at least a part of the deposition member is provided with an opening / closing portion for loading / unloading a substrate. Is characterized by.

In the first apparatus, "a film deposition in which a heater for controlling a substrate temperature, which is provided in parallel with the electrode portion on which both the electrode portions and the substrate are disposed, is replaceably arranged inside the inner wall of the film forming chamber. The term "enclose substantially entirely with a member" refers to a deposition-preventing member because there is a mechanism for loading and unloading a substrate into and from the film forming chamber, and there is a film-forming source gas introduction part that penetrates from the film-forming chamber to the outside. Since the enclosure is omitted for the portion where it is difficult or impossible to apply the enclosure, it is meant that the enclosure may be enclosed almost entirely rather than entirely, and this case is also included.

Further, the film deposition member includes a member for surrounding the peripheral opening between the both electrode portions.
A second plasma apparatus according to the present invention introduces a raw material gas between opposing electrode portions arranged in a film forming chamber, applies a voltage between the both electrode portions to convert the gas into plasma, and In a plasma CVD apparatus for forming a film on a substrate by exposing a substrate placed on one of the electrode parts to the plasma, a heater for controlling the temperature of the substrate arranged side by side with the both electrode parts and the electrode part on which the substrate is arranged. Among them, at least the portion directly exposed to the plasma region between the both electrode portions can be provided with the film deposition member in an exchangeable manner, and the peripheral opening portion between the both electrode portions can be exchanged inside the film forming chamber inner wall. It is characterized in that it is entirely or substantially entirely surrounded by the film deposition-inhibitory member arranged in, and that the opening / closing portion for loading / unloading the substrate is provided on at least a part of the deposition-inhibitory member.

In this second apparatus, the phrase "encloses the peripheral opening between the two electrode portions substantially entirely by a film deposition member that is exchangeably arranged inside the inner wall of the film forming chamber". Since the enclosure is omitted for the part where it is difficult or impossible to apply the enclosure by the deposition preventive member due to the mechanism for loading and unloading the substrate to the chamber, etc., it may be enclosed almost entirely, not entirely. , Is meant to include this case as well.

In order to more surely prevent dust from adhering to the substrate on which the film is to be formed, a third device which is a combination of the first and second devices may be used. That is, a raw material gas is introduced between opposing electrode portions arranged in a film forming chamber, and a voltage is applied between the both electrode portions to turn the gas into plasma, and a substrate placed on one of the both electrode portions. In the plasma CVD apparatus for forming a film on the substrate by exposing the substrate to the plasma, heaters for controlling the substrate temperature, which are arranged in parallel with the electrode portions and the electrode portion on which the substrate is arranged, are provided inside the film forming chamber inner wall. And a heater for controlling the temperature of the substrate, which is provided with an opening / closing part for loading / unloading the substrate on at least a part of the deposition-protecting member. Among them, the plasma CVD apparatus is characterized in that at least a portion directly exposed to a plasma region between the both electrode portions is provided with a film deposition member which is replaceable.

In the first, second, and third CVD apparatuses, the "electrode portion on which the base body is arranged" refers to the electrode body when the base body is directly arranged and fixed on the electrode body. Is placed on a substrate support member such as a so-called substrate support tray, and when this support member is placed on the electrode body, it refers to both the electrode body and the substrate support member. In short, it indicates the whole of the electrode part.

In the second and third devices, "a heater for controlling the temperature of a substrate arranged in parallel with the electrode portion and the electrode portion on which the substrate is arranged has at least a plasma region between the electrode portions. The "directly exposed portion" in the description of "directly exposed portion" is, in the electrode portion where the substrate is not disposed, the entire surface or substantially the entire surface of the electrode portion which is directly exposed and opposed to the plasma region, The electrode portion on which the substrate is arranged is a portion that is directly exposed and opposed to the plasma region, except for the portion covered by the substrate. In addition, you may provide a film-proofing member also in the part covered by a base | substrate.

When the heater is hidden behind the electrode portion with respect to the plasma region, the heater does not have the "directly exposed portion", but a part of the heater protrudes from the electrode portion and the plasma is not generated. When it is exposed and opposed to the region, the part is also included in the “directly exposed part”. In addition,
Even if the heater does not have a directly exposed portion, a film deposition member may be provided on the entire surface or a part of the heater, if necessary.

When the electrode body of the electrode portion is formed in the shape of a perforated mesh, the side wall of the hole is not included in the "direct exposed portion". However, a film deposition member may be provided on the side wall of this hole as required. In the second and third devices, "a peripheral opening between the two electrode parts"
As for the above, when both the electrode parts and the base are arranged vertically in the left-right direction, upper, side, and lower openings are considered, and when the both electrode parts are arranged vertically in the horizontal direction (or horizontal direction). May be a lateral opening.

In any of the above-mentioned devices of the present invention, the film deposition member may be a sheet-shaped member, a sheet-shaped member such as a thin plate (including foil), or a combination thereof. A flexible one that can be wound and unwound is also considered. As a material of the surface of the plate-shaped deposition preventing member or the sheet-shaped deposition preventing member facing the plasma region side, stainless steel, aluminum or other metal, semiconductor material (eg, silicon), and the like are considered.

Each of the plate-shaped deposition-inhibitory member and the sheet-shaped deposition-inhibitory member is made of the same material as a whole and is made of a metal plate, a metal sheet,
It may be formed as a semiconductor material plate, a semiconductor material sheet, or the like, but may be formed as a plurality of layers such as a sheet layer or a film layer such as a base material portion and a thin plate (including foil) provided thereon. In this case, the surface layer exposed on the plasma region side may be formed of the stainless steel, aluminum or other metal, semiconductor material, or the like.

Further, such a surface layer is desirable to have a linear expansion coefficient close to that of the underlying substrate part so that it can be stably used for a long period of time. Further, such a surface layer is formed on the substrate so that even if a thick film is deposited on the surface layer, the surface layer firmly adheres and does not easily peel off for a long period of time, and thus the adhesion preventing member does not need to be replaced for a long period of time. It is conceivable to form the same film as the desired film into a film shape. As an example, when the target film is silicon (Si) or its compound, it is possible to form the surface layer on the silicon (eg, crystalline silicon) surface layer by plasma CVD or other means.

Further, the sheet layer or thin plate layer constituting the surface layer may be replaceably provided on the base material portion. These anti-adhesion plates and anti-adhesion sheets are the same for those enclosing both electrode parts and the heater in the first and third devices and those enclosing the opening between both electrode parts in the second device. It can be provided so that it can be easily replaced by a means such as screwing from the plasma region side or detachably fitting to a supporting frame or the like provided in advance so as to face it. Further, in the second and third devices, as for those provided on both the electrode portions and the heater, means such as screwing them from the plasma region side or detachably fitting them directly or to a supporting member provided in advance on them. It can be installed for easy replacement.

Regarding the deposition-inhibitory member that surrounds both electrode portions and the heater in the first and third devices, and the deposition-inhibitory member that surrounds the opening between both electrode portions in the second device,
A sheet in which a sheet-like member is used for at least a part of the deposition-inhibitory member, and at least a part of the sheet-shaped deposition-inhibitory member is movably stretched between a winding / feeding reel and pulled out to a film deposition position. If a film adheres so thick that there is a risk of peeling, the sheet part with the film adhered will be wound up on one reel and a new sheet part will be pulled out from the other reel for use. The whole may be exchanged. According to this structure, the period for exchanging the film deposition member becomes longer, and the expenditure required for the exchanging work and the apparatus operation stop period can be reduced accordingly.

In the first and third devices, the deposition preventing member that surrounds both the electrode portions and the heater, and in the deposition device that surrounds the opening between the electrode portions in the second device, the opening / closing portion for loading and unloading the substrate is The rotary door type hingedly connected to the stationary portion of the attachment-preventing member and the sliding door type slidably attached to the stationary portion by a rail or the like are conceivable. The sheet-shaped deposition-inhibitory member is provided with an opening for loading and unloading the base body and a closed portion that is not open, and the sheet-shaped member is wound between the reels and opened and closed by reciprocating by reeling out. In this case, at least one open part and at least two closed parts that are not open are provided, and the closed parts that are not open are sequentially arranged.
It may also be used for film deposition.

[0021]

According to the plasma CVD apparatus of the present invention, the raw material gas for film formation is introduced between both electrode portions, and a voltage is applied between both electrode portions to turn this gas into a plasma, which is The desired film is formed on the base by exposing the base placed on the electrode part of the.

During the film formation, in the first and third devices, both electrode parts and the heater are wholly or substantially entirely surrounded by the film deposition member, and in the second device, the space between the electrode parts is reduced. Since the peripheral opening is surrounded entirely or almost entirely by the film deposition member, it is possible to prevent formation of a film to be considered a problem on the inner wall of the film forming chamber. Further, in the second and third devices, during the film formation on the substrate, the film formation progresses also in the portions of both the electrode parts and the heater which are directly exposed to the plasma region.
A film deposition member is provided in advance on this portion, and the film is formed on this deposition member.

Therefore, in any case, for the adhesion-preventing member in which a thick film is formed and there is a possibility that the film may come off, this is replaced with a new one, thereby generating dust and adhering to the substrate. Can be suppressed or prevented. In any of the devices according to the present invention, the total area of the film deposition member that directly contributes to the generation of dust and the prevention of dust adhesion to the substrate to be film-formed is the same as that of the conventional one, either entirely or substantially on the inner wall of the film-forming chamber. Less than the total area of the film deposition member provided over the entire surface,
Moreover, since there is no restriction on the inner wall of the film-forming chamber, the film-deposition member itself can be provided relatively inexpensively, and the cost required for the replacement can be increased. In addition, since it is less necessary and the replacement can be facilitated, it is possible to improve the operation rate of the apparatus, and furthermore, it is possible to sufficiently suppress or prevent the generation of dust and the adhesion to the substrate.

[0024]

Embodiments of the present invention will be described below with reference to the drawings. 1 is a schematic perspective view of the whole, and FIG. 2 is X of FIG.
It is a sectional view taken along the line X. This plasma CVD apparatus is an in-line vertical transfer type apparatus, and is provided with a film forming chamber 1, in which the left and right high-frequency electrode portions 21, 22 and an electric heater 3 for controlling the substrate temperature between them are provided. is set up. These are all set in place.

The electrode portions 21 and 22 have perforated mesh-shaped electrodes 211 and 221, respectively, and raw material gas introducing portions 212 and 222 so as to cover them from behind. Both electrodes 211 and 221 are wired and connected to one matching box M and a high frequency power source PW via a gas introduction part. Both gas introduction parts 212 and 222 are connected to the source gas source G by piping through one mass flow controller F and one opening / closing solenoid valve S.

Below the heater 3, a pair of left and right roller rows 4 is provided.
1 and 42 are provided in parallel to each other and at the same height, and each row roller is rotatably supported at a fixed position by a support frame (not shown). In the figure, 51 and 52 are a pair of left and right ground electrode portions, which are provided with means (not shown) capable of supporting the substrate ST on which a film is to be formed. The lower end portions of these electrode portions are fixed to the support body 53, and they are erected at predetermined intervals with respect to each other.

The support body 53 has U-shaped cross-section members 531 and 532 that are open to the outside on the left and right, and these are fitted onto the above-mentioned roller rows 41 and 42 and run, so that the electrode portions 51 and 52 are formed.
And the substrate ST supported thereby into the film forming chamber 1,
Or you can put it out. When the electrode parts 51 and 52 are placed at regular positions in the film forming chamber 1, the heater 3 is located between them, the electrode part 51 faces the high frequency electrode part 21, and the electrode part 52 faces the high frequency electrode part 22. .

An exhaust device 6 is connected to the bottom wall hole 11 of the film forming chamber 1. A film deposition plate 20 is attached from the ground electrode side by a screw (not shown) to the entire surface of each of the high-frequency electrode portions 21 and 22 facing the ground electrode portion, and the sheet can be easily operated by operating the screw. Can be exchanged. Each sheet 20 is perforated according to the mesh holes of the electrodes 211 and 221. Therefore, the side wall of each mesh hole is not covered. However, if necessary, the side wall of each mesh hole may be covered. The film adhesion plate 5 is also formed on the entire surface of the ground electrode portions 51 and 52 facing the high frequency electrode portions.
0 is set. Each plate 50 is attached from the high frequency electrode side with a screw (not shown), and can be easily replaced by operating the screw.

Further, the heater 3 is also provided with a film-proofing plate 30 which can be easily replaced by screwing on substantially the entire peripheral surface exposed in the film forming chamber space. In the present embodiment, the heater 3
Since it is hidden between the ground electrode portions 51 and 52, the deposition preventive member is not necessarily required. Further, even if it is provided, it may be provided not on the substantially entire circumference as in the present embodiment, but only on the surface where film adhesion is likely to occur.

In the present embodiment, the film deposition protection plates 20, 50, 3 are
0 is made of a crystalline silicon plate. Deposition chamber 1
Further, inside thereof, film deposition members 7, 8, 9 for enclosing the electrode portions 21, 22, 51, 52 and the heater 3 almost entirely are provided.
10 is provided. The member 7 is located at a position facing one of the entrances and exits 12 of the film forming chamber 1, the member 8 is located at a position facing the ceiling 13 of the film forming chamber 1, and the member 9 is opposed to the entrance 12 of the film forming chamber 1. It is in a position facing one entrance 14. All of these members 7, 8 and 9 are inside the inner wall of the film formation chamber and cover the upper openings and the front and rear side openings of the plasma regions A and B between the electrode parts. The member 10 is positioned along both sides of the members 7, 8 and 9 and the high frequency electrode section 2
Behind 1, 22 and inside the inner wall of the deposition chamber.

Each of the deposition-preventing members 7, 8 and 9 is a deposition-proof sheet in which an amorphous silicon (a-Si) film is previously formed on the surface of a stainless steel thin plate (aluminum thin plate may be used). It is arranged toward the plasma regions A and B between the electrode portions. The deposition-inhibitory sheet 7 is wound on the upper reel 71 of the reels 71, 72 arranged vertically in the film forming chamber 1 by a predetermined amount, and a part of this is reeled out and connected to the lower reel 72. It is movably stretched between reels. The seat 7 has ground electrode portions 51, 5
2. A plurality of substrate loading / unloading openings 70 through which the substrate ST on the support 53 and the electrode portion can be loaded / unloaded are formed intermittently, and a space between the openings 70 and 70 is a closed portion. Further, the reels 71 and 72 can be operated in forward and reverse directions by a motor (not shown). Therefore, by rotating the reels 71 and 72 forward or backward by the motor, any one of the openings 70 is formed in the substrate entrance 1 of the film forming chamber 1.
2 or the plasma regions A and B can be covered with a closed portion adjacent to the opening 70. Further, the set of openings 70 and the closed portion adjacent thereto can be wound on the lower reel 72 and the next opening and the closed portion can be sequentially used.

The deposition-inhibitory sheet 9 is wound around the upper reel 91 of the reels 91 and 92 arranged vertically in the film forming chamber 1, and a part of the reel is taken out from the reel 91 and connected to the lower reel 92. It is movably stretched between both reels.
A substrate loading / unloading opening 9 through which the ground electrode portions 51, 52, the support 53 thereof, and the substrate ST on the electrode portion can be loaded / unloaded in / from the sheet 9.
A plurality of 0s are formed intermittently, and a space between the openings 90 is a closed portion. In addition, the reels 91 and 9
Reference numeral 2 allows forward rotation and reverse rotation operation by motors not shown. Therefore, by rotating the reels 91 and 92 forward or backward by the motor, any one of the openings 9
0 to the substrate entrance / exit 14 of the film forming chamber 1 or the opening 9
The plasma region A, B can be covered with a closed part adjacent to 0. Further, the pair of openings 90 and the closed portion adjacent thereto can be wound on the lower reel 92, and the next opening and the closed portion can be sequentially used.

The deposition-inhibitory sheet 8 is provided between the upper reels 71 and 91, and is screwed to a supporting member previously provided in the film forming chamber 1 from the plasma region side so as to be replaceable. Sheet 7,
Each of the adhesion preventing members 10 along both sides of 8 and 9 is a stainless steel thin plate (which may be an aluminum thin plate or a Si crystal plate) is replaceably attached to the surface of the base plate by screwing. It is installed in advance by a screw or the like on a supporting member provided in the film forming chamber 1, and only the surface plate is the object of replacement.

The shafts SH of the reels 71, 72, 91, 92 penetrate the deposition-inhibitory plates 10, 10, and at least one of the upper reels 71, 91 and at least one of the lower reels 72, 92. (In this example, reel 9
Shafts 1 and 92) pass through upper and lower horizontal elongated holes 101 provided in each deposition-inhibiting plate 10 so that the relative positions of the reel and the deposition-inhibiting plate can be adjusted.

In this embodiment, the plasma regions A and B are further added.
Membrane-preventing plate 1 in which Si plates are also attached to the respective lower openings of the
00 are arranged, and these are also screwed to a supporting member (not shown) in a replaceable manner. Instead of the plate 100, or together with this, it is also possible to provide a deposition-preventing plate so as to be replaceable on the entire bottom or substantially the entire bottom of the film forming chamber 1. According to the plasma CVD apparatus, the ground electrode portions 51 and 52, on which the substrate ST to be formed is placed, are carried together with their supporting bodies 53 from a substrate loading chamber or a process chamber in a preceding step (not shown) by a carrying mechanism (not shown). Then, it is carried into the film forming chamber 1 through the inlet 12 of the film forming chamber 1. At this time, a gate valve (not shown) of the inlet 12 of the film forming chamber is opened, and the opening 70 of the deposition-inhibitory sheet 7 in the film forming chamber 1 is exposed to the inlet 12. After the substrate is loaded, the gate valve is closed, and the deposition preventing sheet 7 faces the plasma regions A and B at the closed portion. At this time, also in the deposition-inhibitory sheet 9, the closed portion faces the areas A and B.

Thus, the inside of the film forming chamber 1 is evacuated to a predetermined film forming vacuum degree by the exhaust device 6, and the electrode parts 21, 51 are formed.
Source gas for forming a film is the gas source G
Is introduced by a predetermined amount, and a voltage is applied between these electrode portions by a power source PW to turn this gas into plasma. By exposing the substrate ST on the ground electrode portion to this plasma,
A desired film is formed on the substrate. In this example, this film is silicon or its compound film.

During this film formation, the electrodes 21, 22, 51, 5 are formed.
Since the heater 2 and the heater 3 are substantially entirely surrounded by the film deposition members 7, 8, 9 and 10, it is possible to prevent formation of a film that should be considered a problem on the inner wall of the film forming chamber. Further, during the film formation on the substrate ST, the film formation progresses in the portions of the electrode portions 21, 22, 51, 52 that are directly exposed to the plasma region, and the film formation adheres to the heater 3 as well. Membrane protection member 2 in advance
0, 50, 30 are provided and the film is formed on this deposition-inhibitory member.

Therefore, in any case, with respect to the adhesion-preventing member in which a thick film is formed and there is a possibility that it may come off, this is replaced with a new one in whole or in part, whereby dust is generated or dust is generated. Can be suppressed or prevented from adhering to the substrate ST. As for the deposition-preventing sheets 7 and 9, the portions where the film is not sequentially formed can be used by feeding the sheet, and when the film is thickly attached to the entire sheet, the entire sheet is replaced.

In the apparatus of the above-described embodiment, the total area of the film deposition member directly contributing to the generation of dust and the prevention of dust adhesion to the substrate on which the film is to be formed is the same as in the conventional case, either entirely or substantially entirely on the inner wall of the film forming chamber. Since the total area of the film deposition member to be provided is smaller than the total area, and the method of providing the film deposition member is not limited to the inner wall of the film forming chamber 1, the film deposition member is provided so as to be easily exchanged. The member itself can be made relatively inexpensive, and the expense required for its replacement can be reduced. Furthermore, since the replacement can be facilitated, the operation rate of the device can be improved,
Moreover, it is possible to sufficiently suppress or prevent the generation of dust and the adhesion of dust to the substrate.

In particular, in the case where silicon or a compound film thereof is formed on the substrate ST as in the above-mentioned embodiment, if the surface layer of the deposition-inhibitory member is made of a silicon-based material, the film does not adhere to the surface layer. Since it is strong and does not easily come off, it can be used for a long time without the need for replacement, and the operating rate of the equipment is improved in this respect as well. When the film formation is completed as described above, the opening 90 of the deposition-inhibiting sheet 9 faces the entrance 90 of the film forming chamber 1, the gate valve (not shown) of the entrance is opened, and the substrate ST is grounded. It is transported to the next process room, unload room, etc. together with the department.

Using the above plasma CVD apparatus, 350 m
aS on a glass substrate of m (length) x 400 mm (width)
An i film was formed to a thickness of 500Å, 1000Å, 5000Å, and for comparison, a conventional type in which the film deposition member was not provided in the plasma CVD apparatus was used, and the film was formed in the same manner. When the film was observed with a laser microscope, it was found that the film with the device of Example had a film thickness of 5
In any case of 00Å, 1000Å, 5000Å,
The presence of dust of 0.5 μm or more was not recognized. On the other hand, in the case of the film of the conventional type device, the adhered dust of 2 to 3 μm was recognized for each film of each thickness.

Further, using the plasma CVD apparatus of the above-mentioned embodiment, the a-Si film and the a-SiNx film were respectively formed on a Si substrate having a diameter of 16 inches and a rectangular glass substrate having a diagonal length of 22 inches in the range of 1000Å to 3000Å. For the sake of comparison, a film was similarly formed by the conventional type plasma CVD apparatus, and after forming each film, a sample for observation was cut out and the state of the film surface was checked with an optical microscope and SEM. A result of 1 was obtained. As can be seen from these results, the a-Si film and the a-Si formed by the conventional type device
Compared with the adhered particles observed in the Nx film, the adhered particles are remarkably small and the number thereof is also small in the film according to the apparatus of the embodiment.

[0043]

[Table 1]

[0044]

As described above, according to the present invention, the source gas is introduced between the opposing electrode portions arranged in the film forming chamber, and a voltage is applied between the both electrode portions to generate plasma in the gas. In a plasma CVD apparatus for forming a film on the base by exposing the base placed on one of the two electrode parts to the plasma, and attaching dust to the base at a lower cost than before.
Further, it is possible to suppress the device operating rate without significantly lowering it.

[Brief description of drawings]

FIG. 1 is a schematic perspective view of an embodiment of the present invention.

FIG. 2 is a sectional view taken along line XX of FIG.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Film-forming chamber 11 Exhaust hole of the film-forming chamber 12, 14 Substrate entrance / exit of the film-forming chamber 1 13 Ceiling 21 of the film-forming chamber 1 High-frequency electrode part 211,221 High-frequency electrode 20 It is provided in the high-frequency electrode parts 21 and 22. Membrane protection plate 3 Heater for controlling substrate temperature 30 Membrane protection plate provided on heater 3 41, 42 Roller row 51, 52 Ground electrode section 53 Supports 53, 532 for electrode section 51, 52 Cross section of support 53 V-shaped member 50 Membrane-proofing plate provided on the ground electrode parts 51, 52 6 Exhaust devices 7, 8, 9 Membrane-proofing sheet 70 Substrate loading / unloading openings 71, 72 in the sheet 7 Reel 90 for stretching the sheet 7 In the sheet 9 Substrate loading / unloading openings 91, 92 Reel on which the sheet 9 is stretched 10 Membrane protective plates on both sides of the sheets 7, 8, 9 A, B Plasma regions 100 Membrane protective plates under plasma regions A, B

Claims (20)

[Claims] 1. A raw material gas is introduced between opposing electrode portions arranged in a film forming chamber, and a voltage is applied between the both electrode portions to turn the gas into plasma, and one of the both electrode portions is converted into plasma. In a plasma CVD apparatus for exposing a placed substrate to the plasma to form a film on the substrate, a heater for controlling a substrate temperature, which is provided in parallel with the both electrode portions and an electrode portion where the substrate is arranged, is provided in the film forming chamber. A plasma CVD apparatus characterized in that it is entirely or almost entirely surrounded by a film deposition member that is replaceably arranged inside a wall, and that at least a part of the deposition member is provided with an opening / closing portion for loading / unloading a substrate. . 2. A raw material gas is introduced between opposing electrode portions arranged in a film forming chamber, and a voltage is applied between the both electrode portions to turn the gas into a plasma, and one of the both electrode portions is converted into plasma. In a plasma CVD apparatus for exposing a placed substrate to the plasma to form a film on the substrate, at least one of the two electrode parts and a substrate temperature control heater arranged in parallel with the electrode part where the substrate is arranged. A film deposition member is provided so as to be replaceable in a portion directly exposed to the plasma region between the electrode parts, and a peripheral opening between the both electrode parts is arranged so as to be replaceable inside the film formation chamber inner wall. A plasma CVD apparatus characterized in that it is entirely or substantially entirely surrounded by a member, and an opening / closing portion for loading / unloading a substrate is provided on at least a part of the deposition-inhibitory member. 3. A raw material gas is introduced between opposing electrode parts arranged in a film forming chamber, and a voltage is applied between the two electrode parts to turn the gas into plasma, and one of the two electrode parts is provided with a gas. In a plasma CVD apparatus for exposing a placed substrate to the plasma to form a film on the substrate, a heater for controlling a substrate temperature, which is provided in parallel with the both electrode portions and an electrode portion where the substrate is arranged, is provided in the film forming chamber. The film deposition member disposed inside the wall in a replaceable manner is wholly or substantially entirely surrounded by a film deposition member, and at least a part of the deposition member is provided with an opening / closing portion for loading / unloading the substrate, and the electrode portions and the substrate temperature are Plasma C, characterized in that a film deposition member is replaceably provided in at least a portion of the control heater which is directly exposed to the plasma region between the electrode portions.
VD device. 4. The plasma CV according to claim 1, 2 or 3, wherein at least a part of the film deposition preventing member is a sheet-like member.
D device. 5. A film-insulating member for enclosing a peripheral opening between the two electrode parts is at least a part of the sheet-like member, and at least a part of the sheet-like member is a take-up / feed-out reel. The plasma CVD apparatus according to claim 4, which is movably stretched between them. 6. A film-insulating member for surrounding a peripheral opening between both electrode portions, at least a member arranged at a position where the opening / closing portion for loading / unloading the substrate is formed of the sheet-like member. The sheet-shaped member includes a portion provided with a base body loading / unloading opening and a closed portion that is not provided, and the sheet-shaped member is movably stretched between the winding / feeding reels. Item 4. The plasma CVD apparatus according to Item 4. 7. The plasma CVD apparatus according to claim 4, 5 or 6, wherein the sheet-shaped member is a metal sheet. 8. The plasma CVD apparatus according to claim 7, wherein the metal sheet is made of stainless steel or aluminum. 9. The plasma CVD apparatus according to claim 7, wherein the metal sheet has a film of the same material as that of the film to be formed on the substrate, which is previously formed on the surface of the plasma region between the electrode portions. . 10. The plasma CVD according to claim 1, 2 or 3, wherein at least a part of the film deposition preventing member is a plate-shaped member.
apparatus. 11. The plate-shaped member is a metal plate.
0. The plasma CVD apparatus described in 0. 12. The plasma CVD apparatus according to claim 11, wherein the metal plate is made of stainless steel or aluminum. 13. The plasma CVD apparatus according to claim 11, wherein the metal plate has a film of the same material as the film to be formed on the substrate formed in advance on the surface of the plasma region between the electrode portions. . 14. The plasma CVD apparatus according to claim 10, wherein the plate-shaped deposition preventing member includes a base material portion and a surface layer laminated thereon, and the surface layer is a thin metal plate. 15. The plasma CVD apparatus according to claim 14, wherein the thin metal plate is made of stainless steel or aluminum. 16. The plasma CVD apparatus according to claim 14, wherein the thin metal plate is formed beforehand with a film made of the same material as the film to be formed on the substrate on the surface of the plasma region between the electrode portions. . 17. The plasma CVD apparatus according to claim 14, 15 or 16, wherein said thin metal plate is provided on said base material portion so as to be replaceable. 18. The plasma CVD apparatus according to claim 10, wherein the plate-shaped adhesion preventing member includes a base material portion and a surface layer laminated on the base material portion, and the surface layer is made of a semiconductor material. 19. The plasma CVD apparatus according to claim 18, wherein the semiconductor material is silicon. 20. The plasma CVD apparatus according to claim 18, wherein the semiconductor material surface layer is formed in a plate shape or a sheet shape, and is provided on the base material portion in a replaceable manner.