JPH0638162B2 - Resist stripper - Google Patents
Resist stripperInfo
- Publication number
- JPH0638162B2 JPH0638162B2 JP19899888A JP19899888A JPH0638162B2 JP H0638162 B2 JPH0638162 B2 JP H0638162B2 JP 19899888 A JP19899888 A JP 19899888A JP 19899888 A JP19899888 A JP 19899888A JP H0638162 B2 JPH0638162 B2 JP H0638162B2
- Authority
- JP
- Japan
- Prior art keywords
- weight concentration
- composition
- resist
- phenol
- resist stripper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は混合有機溶媒の組成物に係り、特に半導体工業
等で用いられるレジスト材料の剥離剤として好適な組成
物に関する。TECHNICAL FIELD The present invention relates to a composition of a mixed organic solvent, and more particularly to a composition suitable as a stripping agent for resist materials used in the semiconductor industry and the like.
従来のレジスト剥離剤に関しては、例えば代表的な例と
しては、米国特許第３，８７１，９２９号に報告されて
いる。これはフェノール（phenol）（或いは酢酸）、フ
ェノール・スルフォン酸（phenol sulfonic acid）およ
び塩素含有炭化水素（chlorinated hydrocarbon）等を
含有するものである。Regarding the conventional resist stripping agent, for example, a typical example is reported in US Pat. No. 3,871,929. This contains phenol (or acetic acid), phenol sulfonic acid, and chlorinated hydrocarbons.
上記した従来のレジスト剥離剤は、１００〜１５０℃に
加熱した状態で試料を浸漬することによりホトレジスト
などの有機物を除去することを目的としていた。ところ
がＮｉ，Ｓｎ，Ａｌ等の金属が溶解する点について配慮
がなされておらず、そのため、例えばＡｕとＮｉの複合
蒸着膜等の形成された試料に使用した場合、Ｎｉを溶解
してしまうという解決すべき課題があった。The conventional resist stripping agent described above is intended to remove organic substances such as photoresist by immersing the sample in a state of being heated to 100 to 150 ° C. However, no consideration has been given to the fact that metals such as Ni, Sn, and Al dissolve, and therefore, when used for a sample on which, for example, a composite vapor deposition film of Au and Ni is formed, Ni is dissolved. There was a task to be done.
本発明の目的は、上記Ｎｉ，Ｓｎ，Ａｌ等の金属材料を
溶解しないレジスト剥離剤を提供することにある。An object of the present invention is to provide a resist stripping agent that does not dissolve the above metal materials such as Ni, Sn and Al.
〔課題を解決するための手段〕 上記の目的を達成するため本発明は次の組成の剥離剤を
用いるものである。[Means for Solving the Problems] In order to achieve the above object, the present invention uses a release agent having the following composition.
（１）フェノール ：約１０〜４０％ （重量濃度） （２）アルキルベンゼンスルフォン酸： ３０〜７０％ （重量濃度） （３）塩素含有有機化合物： ５〜３０％ （例えば、クロロベンゼン，ヘキサクロロエタン等） （総重量濃度） （４）有機アルカリ ： １〜２０％ （重量濃度） 有機アルカリを添加することが、本発明の主要点で、原
組成中のフェノール，クロルベンゼン，ヘキサクロロエ
タン等と相溶性の良い有機アルカリが好ましい。望むら
くは沸点２００℃程度のものが良い。具体的にはクロロ
アニリン，アニリン，ピリジン等の芳香族アミン；トリ
ｎプロピルアミン，ヘキサメチレンジアミン等の脂肪族
アミン；テトラメチルアンモニウムハイドロオキサイド
等のアンモニウム塩等がある。(1) Phenol: about 10 to 40% (weight concentration) (2) Alkylbenzenesulfonic acid: 30 to 70% (weight concentration) (3) Chlorine-containing organic compound: 5 to 30% (for example, chlorobenzene, hexachloroethane, etc.) (Total Weight Concentration) (4) Organic Alkali: 1-20% (Weight Concentration) The addition of an organic alkali is the main point of the present invention and is compatible with phenol, chlorobenzene, hexachloroethane, etc. in the original composition. A good organic alkali is preferred. The boiling point is preferably about 200 ° C. Specific examples include aromatic amines such as chloroaniline, aniline and pyridine; aliphatic amines such as tri-n-propylamine and hexamethylenediamine; ammonium salts such as tetramethylammonium hydroxide.
従来のレジスト剥離剤にはアルキルベンゼンスルフォン
酸，フェノールの他に、クロルベンゼンおよびヘキサク
ロロエタン等の塩素含有有機化合物が含有されている。
ここに工程途中でＨ２Ｏが混入するとＨＣｌが生成さ
れ、これがＮｉ，Ｓｎ，Ａｌ等を溶解する。以上の事は
我々が行った故意にＨ２Ｏを添加してＮｉの溶解速度を
測定する実験から見出されたものである。Conventional resist strippers contain chlorine-containing organic compounds such as chlorobenzene and hexachloroethane in addition to alkylbenzene sulfonic acid and phenol.
When H 2 O is mixed in the process during the process, HCl is generated, which dissolves Ni, Sn, Al and the like. The above is found from the experiment conducted by us intentionally adding H 2 O to measure the dissolution rate of Ni.
上記不良をなくするためには、Ｈ２Ｏの混入を避けるこ
とが考えられるが、通常の工程では微量水分の混入は避
け難い。しかし、本発明のレジスト剥離剤にはあらかじ
め有機アルカリが添加してあるので、もし水分が混入し
てＨＣｌが生成しても、それは有機アルカリにより中和
され、溶解の主因たるＨＣｌは除去される。In order to eliminate the above defects, it is possible to avoid mixing H 2 O, but it is difficult to avoid mixing a trace amount of water in the normal process. However, since the resist stripper of the present invention is preliminarily added with an organic alkali, even if water is mixed to generate HCl, it is neutralized by the organic alkali and HCl, which is the main cause of dissolution, is removed. .
実施例１． 以下本発明の実施例を説明する。混合有機溶媒の重量組
成は、アルキルベンゼンスルフォン酸の一種のドデシル
ベンゼンスルフォン酸５５wt％，フェノール２０wt％，
クロルベンゼン１０wt％，ヘキサクロロエタン１０wt
％、および有機アルカリとしてクロロアニリン５wt％と
した。該組成物を１００℃に加温した状態で１μｍ厚の
市販ポジ形ホトレジスト（東京応化製ＯＦＰＲ８００）
を浸漬したところ５分間で完全に溶解し、レジスト剥離
剤として従来品に劣らず良好な特性を有していることが
わかった。この時、ＡｕとＮｉの重ね膜中のＮｉ蒸着膜
の溶解は認められず、浸漬時間を１時間まで延長しても
２０Å以上の溶解は検出できなかった。Example 1. Examples of the present invention will be described below. The weight composition of the mixed organic solvent is 55 wt% of dodecylbenzene sulfonic acid which is a kind of alkylbenzene sulfonic acid, 20 wt% of phenol,
Chlorobenzene 10wt%, Hexachloroethane 10wt
%, And chloroaniline as an organic alkali was 5 wt%. Commercially available positive photoresist having a thickness of 1 μm (OFPR800 manufactured by Tokyo Ohka Co., Ltd.) with the composition heated to 100 ° C.
When it was dipped, it was completely dissolved in 5 minutes, and it was found that it had good properties as a resist stripping agent as good as conventional products. At this time, dissolution of the Ni vapor deposition film in the Au / Ni layered film was not observed, and dissolution of 20Å or more could not be detected even when the immersion time was extended to 1 hour.
また次の実施例試料No.２〜８のような重量組成の混合
有機溶媒を作製し、先の実施例１と同様、Ｎｉ／Ａｕ重
ね膜上でのレジスト剥離実験を行った結果、従来のレジ
スト剥離剤と同様に良好なレジスト剥離性を示し、かつ
Ｎｉの溶解は認められなかった。Further, a mixed organic solvent having a weight composition as in the following example samples Nos. 2 to 8 was prepared, and a resist stripping experiment was performed on the Ni / Au stacked film as in Example 1 above. Similar to the resist release agent, it exhibited good resist release properties, and no dissolution of Ni was observed.
これら剥離剤の例を下表に示す。Examples of these release agents are shown in the table below.
なお、塩素含有有機化合物の組成は５〜３０wt％の範囲
で選択可能であり、そのときはフェノール，アルキルベ
ンゼンスルフォン酸の組成を変えて全体の組成調整を行
なう。 The composition of the chlorine-containing organic compound can be selected within the range of 5 to 30 wt%, and in that case, the composition of the phenol and alkylbenzene sulfonic acid is changed to adjust the overall composition.
以上のような本発明によれば、比較的酸に溶解しやすい
金属蒸着膜を用いた試料にも適用可能なレジスト剥離剤
が得られる。According to the present invention as described above, a resist stripping agent that can be applied to a sample using a metal vapor deposition film that is relatively soluble in acid can be obtained.
Claims (1)
量濃度３０〜７０％のアルキルベンゼンスルフォン酸お
よび総重量濃度５〜３０％の塩素含有有機化合物を含有
するレジスト剥離剤において重量濃度１〜２０％の有機
アルカリを含有させたことを特徴とするレジスト剥離
剤。1. A resist stripper comprising a phenol having a weight concentration of about 10 to 40%, an alkylbenzene sulfonic acid having a weight concentration of 30 to 70% and a chlorine-containing organic compound having a total weight concentration of 5 to 30%, and having a weight concentration of 1 to 20. % Of organic alkali is contained in the resist stripper.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19899888A JPH0638162B2 (en) | 1988-08-11 | 1988-08-11 | Resist stripper |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19899888A JPH0638162B2 (en) | 1988-08-11 | 1988-08-11 | Resist stripper |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0248668A JPH0248668A (en) | 1990-02-19 |
| JPH0638162B2 true JPH0638162B2 (en) | 1994-05-18 |
Family
ID=16400400
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19899888A Expired - Lifetime JPH0638162B2 (en) | 1988-08-11 | 1988-08-11 | Resist stripper |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0638162B2 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2814986B2 (en) * | 1996-04-30 | 1998-10-27 | 日本電気株式会社 | Wiring pattern forming method |
| US5817610A (en) * | 1996-09-06 | 1998-10-06 | Olin Microelectronic Chemicals, Inc. | Non-corrosive cleaning composition for removing plasma etching residues |
| US5780406A (en) * | 1996-09-06 | 1998-07-14 | Honda; Kenji | Non-corrosive cleaning composition for removing plasma etching residues |
| US5759973A (en) * | 1996-09-06 | 1998-06-02 | Olin Microelectronic Chemicals, Inc. | Photoresist stripping and cleaning compositions |
| US6030932A (en) * | 1996-09-06 | 2000-02-29 | Olin Microelectronic Chemicals | Cleaning composition and method for removing residues |
| US6413923B2 (en) | 1999-11-15 | 2002-07-02 | Arch Specialty Chemicals, Inc. | Non-corrosive cleaning composition for removing plasma etching residues |
| JP4720627B2 (en) * | 2006-06-06 | 2011-07-13 | トヨタ自動車株式会社 | Reverse gear noise prevention transmission |
-
1988
- 1988-08-11 JP JP19899888A patent/JPH0638162B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0248668A (en) | 1990-02-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |