JPH0637334A - Structure of pressure sensor - Google Patents
Structure of pressure sensorInfo
- Publication number
- JPH0637334A JPH0637334A JP23125492A JP23125492A JPH0637334A JP H0637334 A JPH0637334 A JP H0637334A JP 23125492 A JP23125492 A JP 23125492A JP 23125492 A JP23125492 A JP 23125492A JP H0637334 A JPH0637334 A JP H0637334A
- Authority
- JP
- Japan
- Prior art keywords
- diaphragm
- thin film
- short side
- polycrystalline thin
- strain gauge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 claims abstract description 22
- 239000010408 film Substances 0.000 claims abstract description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 9
- 239000010703 silicon Substances 0.000 claims abstract description 9
- 238000005530 etching Methods 0.000 claims abstract description 7
- 230000001681 protective effect Effects 0.000 claims abstract description 5
- 230000003647 oxidation Effects 0.000 abstract description 2
- 238000007254 oxidation reaction Methods 0.000 abstract description 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
Landscapes
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、圧力センサに関するも
のである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a pressure sensor.
【０００２】[0002]
【従来の技術】従来、図４，図５に示すように、シリコ
ンウェハー１１の表面に、異方性エッチングにより長方
形のダイヤフラム１２を形成した圧力センサには、拡散
歪ゲージ１０を使用しており、その配置は主としてダイ
ヤフラム１２の応力分布と拡散歪ゲージ１０の結晶方向
により決定されている。2. Description of the Related Art Conventionally, as shown in FIGS. 4 and 5, a diffusion strain gauge 10 is used as a pressure sensor in which a rectangular diaphragm 12 is formed on a surface of a silicon wafer 11 by anisotropic etching. The arrangement is mainly determined by the stress distribution of the diaphragm 12 and the crystal orientation of the diffusion strain gauge 10.
【０００３】[0003]
【発明が解決しようとする課題】本発明の多結晶薄膜歪
ゲージを使用した圧力センサでは、歪ゲージの電流の方
向に対して、歪ゲージとしての感度が異なり、従来の拡
散歪ゲージ１０と同じ配置をした場合には、充分な出力
が得られないという問題があった。尚、歪ゲージの電流
の流れる方向と平行な向きに対する歪感度を縦感度、垂
直な向きを横感度と表現すると以下の相違があった。 拡散歪ゲージ 縦感度：横感度≒１：１ 薄膜歪ゲージ 縦感度：横感度≒１：０．１〜０．３The pressure sensor using the polycrystalline thin film strain gauge of the present invention has the same sensitivity as the strain gauge with respect to the current direction of the strain gauge, and is the same as the conventional diffusion strain gauge 10. In the case of arrangement, there was a problem that sufficient output could not be obtained. When the strain sensitivity with respect to the direction parallel to the current flow direction of the strain gauge is expressed as the vertical sensitivity and the vertical direction is expressed as the lateral sensitivity, there are the following differences. Diffusion strain gauge Vertical sensitivity: Horizontal sensitivity ≈ 1: 1 Thin film strain gauge Vertical sensitivity: Horizontal sensitivity ≈ 1: 0.1-0.3
【０００４】[0004]
【課題を解決するための手段】本発明は前記課題を解決
するためになされたもので、実施例に対応する図１〜図
３で説明すると、本発明による圧力センサの構造は、シ
リコンウェハー２の表面に異方性エッチングにより長方
形ダイヤフラム３を、裏面に絶縁膜５，多結晶薄膜歪ゲ
ージ１，保護膜６，電極膜７を、それぞれ形成し、上記
多結晶薄膜歪ゲージ１は、ダイヤフラム３の短辺Ａ１と
短辺Ａ２と平行にかつ短辺Ａ１と短辺Ａ２との中心に、
電流の方向と一致させて上記ダイヤフラム３の中心付近
に２本、エッジ付近に２本それぞれ配置して、４−アク
ティブブリッジを構成したものである。The present invention has been made to solve the above-mentioned problems, and the structure of the pressure sensor according to the present invention will be described below with reference to FIGS. 1 to 3 corresponding to the embodiments. The rectangular diaphragm 3 is formed on the front surface of the same by anisotropic etching, and the insulating film 5, the polycrystalline thin film strain gauge 1, the protective film 6, and the electrode film 7 are formed on the rear surface thereof. Parallel to the short side A1 and the short side A2 and at the center of the short side A1 and the short side A2,
The four active bridges are configured by arranging two in the vicinity of the center of the diaphragm 3 and two in the vicinity of the edges so as to match the direction of the current.
【０００５】[0005]
【作用】シリコンウェハー２の表面に異方性エッチング
により長方形ダイヤフラム３を形成することにより、圧
力が加わると、図６に示すようにダイヤフラム３が変形
し、応力が発生する。ここで長方形のダイヤフラム３の
場合、発生する応力は短辺部のＥに対し、長辺部のＤが
大きく、同様に短辺部のＦに対して長辺部のＣが大きく
発生する。尚、この場合、長辺部のＤの圧縮応力より長
辺部のＣの圧縮応力が大となる。また、ダイヤフラム３
の中心部に発生する引張り応力は、Ｂ方向に対してＡ方
向が大きい。従って、本発明では応力の高いＡ方向に多
結晶薄膜歪ゲージ１を２本、Ｃ方向に同様に２本配置し
てある。依って、応力の高い方向と多結晶薄膜歪ゲージ
１の電流の方向とを一致させることにより、多結晶薄膜
歪ゲージ１の抵抗変化を大きくとることができる。By forming a rectangular diaphragm 3 on the surface of the silicon wafer 2 by anisotropic etching, when pressure is applied, the diaphragm 3 is deformed as shown in FIG. 6 and stress is generated. Here, in the case of the rectangular diaphragm 3, the generated stress is such that D on the long side is large with respect to E on the short side, and similarly C on the long side is large with respect to F on the short side. In this case, the compressive stress of C on the long side is larger than the compressive stress of D on the long side. Also, the diaphragm 3
The tensile stress generated in the central part of A is larger in the A direction than in the B direction. Therefore, in the present invention, two polycrystalline thin film strain gauges 1 are arranged in the A direction where the stress is high, and two polycrystalline thin film strain gauges 1 are similarly arranged in the C direction. Therefore, by matching the direction of high stress and the direction of current of the polycrystalline thin film strain gauge 1, the resistance change of the polycrystalline thin film strain gauge 1 can be made large.
【０００６】[0006]
【実施例】以下、本発明を図により説明する。図１，図
２に示すように、本発明による圧力センサの構造は、シ
リコンウェハー２の表面から１．４×２．１ｍｍの長方
形ダイヤフラム３を異方性エッチングにより形成する。
この時のダイヤフラム３の厚さは約３０μｍである。裏
面には、熱酸化またはＰ．Ｃ．Ｖ．Ｄ等により絶縁膜５
を形成し、その上にＰ．Ｃ．Ｖ．Ｄ等により多結晶薄膜
歪ゲージ１をデポジットしてフォトリソグラフィにより
パターニングし、ＳＯＩ構造とする。その後Ｓｉ
３Ｎ４、ＳｉＯ２などの保護膜６、Ａｌなどの電極膜７
を形成パターニングして４−アクティブブリッジを構成
する。この場合、多結晶薄膜歪ゲージ１はダイヤフラム
３の短辺Ａ１と短辺Ａ２と平行にかつ短辺Ａ１と短辺Ａ
２との中心に、電流の方向と一致させて上記ダイヤフラ
ム３の中心付近に２本、エッジ付近に２本それぞれ配置
する。以上により形成したシリコンウェハー２をダイシ
ングし、ケースに接着して、ボンディング等の配線を行
って圧力センサとする。The present invention will be described below with reference to the drawings. As shown in FIGS. 1 and 2, in the structure of the pressure sensor according to the present invention, a rectangular diaphragm 3 of 1.4 × 2.1 mm is formed from the surface of the silicon wafer 2 by anisotropic etching.
The thickness of the diaphragm 3 at this time is about 30 μm. On the back side, thermal oxidation or P. C. V. Insulating film 5 by D etc.
Forming a P. C. V. The polycrystalline thin film strain gauge 1 is deposited by D or the like and patterned by photolithography to form an SOI structure. Then Si
3 N 4 , protective film 6 such as SiO 2 , electrode film 7 such as Al
Are formed and patterned to form a 4-active bridge. In this case, the polycrystalline thin film strain gauge 1 is parallel to the short side A1 and the short side A2 of the diaphragm 3 and the short side A1 and the short side A.
Two diaphragms are arranged near the center of the diaphragm 3 and two diaphragms are arranged near the edge of the diaphragm 3 at the center of the diaphragm 3 and the direction of the current. The silicon wafer 2 formed as described above is diced, adhered to a case, and wiring such as bonding is performed to form a pressure sensor.
【０００７】ダイヤフラム３の中心部に発生する引張り
応力は、図６を用いて説明したようにＢ方向に対してＡ
方向が大きい。従って、応力の高いＡ方向に多結晶薄膜
歪ゲージ１を２本、Ｃ方向に同様に２本配置してあるの
で、応力の高い方向と多結晶薄膜歪ゲージ１の電流の方
向とを一致させることにより、多結晶薄膜歪ゲージ１の
抵抗変化を大きくとることができる。この圧力センサに
定格圧力の１ｋｇ／ｃｍ２を加えた場合、７５ｍＶの出
力が得られた。この出力は、従来の拡散歪ゲージと同様
の横方向配置をした場合と比較して３．１倍の出力であ
った。The tensile stress generated in the central portion of the diaphragm 3 is A in the B direction as described with reference to FIG.
The direction is big. Therefore, since two polycrystalline thin film strain gauges 1 are arranged in the A direction where the stress is high and two polycrystalline gauge strain gauges 1 are similarly arranged in the C direction, the high stress direction and the current direction of the polycrystalline thin film strain gauge 1 are made to coincide with each other. As a result, the resistance change of the polycrystalline thin film strain gauge 1 can be made large. When a rated pressure of 1 kg / cm 2 was applied to this pressure sensor, an output of 75 mV was obtained. This output was 3.1 times as large as that in the case where the same lateral arrangement as that of the conventional diffusion strain gauge was used.
【０００８】[0008]
【発明の効果】高い応力の位置に多結晶薄膜歪ゲージを
配置し、しかも歪感度の高い向きにパターニングしてあ
るため、ダイヤフラムの変形に対して多結晶薄膜歪ゲー
ジの抵抗変化が大きく得られ、充分な出力が得られる。
さらに、拡散歪ゲージと同様に横方向の配置をした場合
と比較して、２〜３倍の高出力が得られる。また、多結
晶薄膜歪ゲージのパターンを小さくしてスポット配置を
行うとさらに大きな出力が得られる。EFFECTS OF THE INVENTION Since the polycrystalline thin film strain gauge is arranged at a position of high stress and is patterned in a direction having high strain sensitivity, a large resistance change of the polycrystalline thin film strain gauge can be obtained with respect to the deformation of the diaphragm. , Sufficient output is obtained.
Further, as compared with the case of disposing in the lateral direction like the diffusion strain gauge, a high output of 2-3 times can be obtained. Further, a larger output can be obtained by arranging the spots by reducing the pattern of the polycrystalline thin film strain gauge.
【図１】本発明による圧力センサの平面図。FIG. 1 is a plan view of a pressure sensor according to the present invention.
【図２】本発明による圧力センサの断面図。FIG. 2 is a sectional view of a pressure sensor according to the present invention.
【図３】本発明による圧力センサの断面詳細図。FIG. 3 is a detailed sectional view of a pressure sensor according to the present invention.
【図４】従来の圧力センサの平面図。FIG. 4 is a plan view of a conventional pressure sensor.
【図５】従来の圧力センサの断面図。FIG. 5 is a sectional view of a conventional pressure sensor.
【図６】シリコンダイヤフラムの応力線図。FIG. 6 is a stress diagram of a silicon diaphragm.
１ 多結晶薄膜歪ゲージ ２，１１ シリコンウェハー ３，１２ ダイヤフラム ４ ダイヤフラムエッジ ５ 絶縁膜 ６ 保護膜 ７ 電極膜 １０ 拡散歪ゲージ 1 Polycrystalline thin film strain gauge 2,11 Silicon wafer 3,12 Diaphragm 4 Diaphragm edge 5 Insulation film 6 Protective film 7 Electrode film 10 Diffusion strain gauge
Claims (1)
エッチングにより長方形ダイヤフラム（３）を、裏面に
絶縁膜（５），多結晶薄膜歪ゲージ（１），保護膜
（６），電極膜（７）を、それぞれ形成し、上記多結晶
薄膜歪ゲージ（１）は上記ダイヤフラム（３）の短辺Ａ
１と短辺Ａ２と平行にかつ短辺Ａ１と短辺Ａ２との中心
に、電流の方向と一致させて上記ダイヤフラム（３）の
中心付近に２本、エッジ付近に２本それぞれ配置して、
４−アクティブブリッジを構成したことを特徴とする圧
力センサの構造。1. A rectangular diaphragm (3) is formed on the surface of a silicon wafer (2) by anisotropic etching, and an insulating film (5), a polycrystalline thin film strain gauge (1), a protective film (6) and an electrode film on the back surface. (7) are formed respectively, and the polycrystalline thin film strain gauge (1) has a short side A of the diaphragm (3).
1 parallel to 1 and the short side A2 and at the center of the short side A1 and the short side A2, two are arranged near the center of the diaphragm (3) and two are arranged near the edge, respectively, in line with the direction of the current.
4-Structure of the pressure sensor characterized by comprising an active bridge.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23125492A JPH0637334A (en) | 1992-07-16 | 1992-07-16 | Structure of pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23125492A JPH0637334A (en) | 1992-07-16 | 1992-07-16 | Structure of pressure sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0637334A true JPH0637334A (en) | 1994-02-10 |
Family
ID=16920739
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23125492A Pending JPH0637334A (en) | 1992-07-16 | 1992-07-16 | Structure of pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0637334A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011125923A1 (en) * | 2010-04-01 | 2011-10-13 | 日立オートモティブシステムズ株式会社 | Thermal flow sensor |
| US20160282205A1 (en) * | 2015-03-26 | 2016-09-29 | Sensata Technologies, Inc. | Semiconductor strain gauge |
| US10323998B2 (en) | 2017-06-30 | 2019-06-18 | Sensata Technologies, Inc. | Fluid pressure sensor |
| CN109913880A (en) * | 2017-12-13 | 2019-06-21 | 南京机器人研究院有限公司 | A kind of weldment method for protecting surface |
| US10488289B2 (en) | 2016-04-11 | 2019-11-26 | Sensata Technologies, Inc. | Pressure sensors with plugs for cold weather protection and methods for manufacturing the plugs |
| US10545064B2 (en) | 2017-05-04 | 2020-01-28 | Sensata Technologies, Inc. | Integrated pressure and temperature sensor |
| US10557770B2 (en) | 2017-09-14 | 2020-02-11 | Sensata Technologies, Inc. | Pressure sensor with improved strain gauge |
| US10724907B2 (en) | 2017-07-12 | 2020-07-28 | Sensata Technologies, Inc. | Pressure sensor element with glass barrier material configured for increased capacitive response |
| US10871413B2 (en) | 2016-04-20 | 2020-12-22 | Sensata Technologies, Inc. | Method of manufacturing a pressure sensor |
-
1992
- 1992-07-16 JP JP23125492A patent/JPH0637334A/en active Pending
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011215062A (en) * | 2010-04-01 | 2011-10-27 | Hitachi Automotive Systems Ltd | Thermal flow sensor |
| US8935959B2 (en) | 2010-04-01 | 2015-01-20 | Hitachi Automotive Systems, Ltd. | Thermal type flow rate sensor |
| WO2011125923A1 (en) * | 2010-04-01 | 2011-10-13 | 日立オートモティブシステムズ株式会社 | Thermal flow sensor |
| US20160282205A1 (en) * | 2015-03-26 | 2016-09-29 | Sensata Technologies, Inc. | Semiconductor strain gauge |
| US9714876B2 (en) * | 2015-03-26 | 2017-07-25 | Sensata Technologies, Inc. | Semiconductor strain gauge |
| US10488289B2 (en) | 2016-04-11 | 2019-11-26 | Sensata Technologies, Inc. | Pressure sensors with plugs for cold weather protection and methods for manufacturing the plugs |
| US10871413B2 (en) | 2016-04-20 | 2020-12-22 | Sensata Technologies, Inc. | Method of manufacturing a pressure sensor |
| US11105698B2 (en) | 2017-05-04 | 2021-08-31 | Sensata Technologies, Inc. | Method of assembling a sensing device having a double clinch seal |
| US10545064B2 (en) | 2017-05-04 | 2020-01-28 | Sensata Technologies, Inc. | Integrated pressure and temperature sensor |
| US10969288B2 (en) | 2017-06-30 | 2021-04-06 | Sensata Technologies, Inc. | Fluid pressure sensor |
| US10323998B2 (en) | 2017-06-30 | 2019-06-18 | Sensata Technologies, Inc. | Fluid pressure sensor |
| US10724907B2 (en) | 2017-07-12 | 2020-07-28 | Sensata Technologies, Inc. | Pressure sensor element with glass barrier material configured for increased capacitive response |
| US10557770B2 (en) | 2017-09-14 | 2020-02-11 | Sensata Technologies, Inc. | Pressure sensor with improved strain gauge |
| CN109913880A (en) * | 2017-12-13 | 2019-06-21 | 南京机器人研究院有限公司 | A kind of weldment method for protecting surface |
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