JPH06342100A - X-ray exposure device - Google Patents
X-ray exposure deviceInfo
- Publication number
- JPH06342100A JPH06342100A JP5132011A JP13201193A JPH06342100A JP H06342100 A JPH06342100 A JP H06342100A JP 5132011 A JP5132011 A JP 5132011A JP 13201193 A JP13201193 A JP 13201193A JP H06342100 A JPH06342100 A JP H06342100A
- Authority
- JP
- Japan
- Prior art keywords
- optical system
- wafer
- ray
- exposure
- vacuum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
Landscapes
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、Ｘ線リソグラフィーな
どに用いられるＸ線露光装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an X-ray exposure apparatus used for X-ray lithography and the like.
【０００２】[0002]
【従来の技術】Ｘ線を用いた半導体回路の露光・形成
（Ｘ線リソグラフィー）は、近年の半導体装置（ＬＳＩ
など）の高集積化、高密度化の要求に伴い、高解像度の
露光を可能にするために提案されたものである。2. Description of the Related Art Exposure and formation of a semiconductor circuit using X-rays (X-ray lithography) has been performed in recent semiconductor devices (LSIs).
It has been proposed to enable high resolution exposure in response to the demand for higher integration and higher density.
【０００３】図４は、従来のＸ線リソグラフィーに用い
られるＸ線縮小投影露光装置の一例を示す図である。不
図示のシンクロトロン放射光等のＸ線源で発生したＸ線
２は、フィルタ３により所望の軟Ｘ線領域（一例として
４nm〜15nm）の光線（Ｘ線）のみが選択的に通過され、
マスク４に照射される。マスク４には、形成すべき半導
体回路等に対応したパターンが形成されている。マスク
４で反射したＸ線２は、スリット５により不要な光がカ
ットされ、像の解像度が高められる。スリット５を通過
したＸ線２は、反射光学系６を介してステージ８上のウ
ェハ７に照射される。反射光学系６は、Å（オングスト
ローム）レベルまで研磨された鏡面に多層膜がコーティ
ングされた凹面鏡、凸面鏡などを有する。多層膜は、上
述の波長領域の軟Ｘ線領域のみ反射可能となるようにそ
の材質、寸法等が選択されている。ウェハ７の表面に
は、Ｘ線が照射されると化学変化を起こす性質を有する
レジストが塗付されており、マスク４のパターン像がウ
ェハ７の表面に形成されることによりマスク４に対応し
たパターンがレジストに露光される。FIG. 4 is a diagram showing an example of an X-ray reduction projection exposure apparatus used in conventional X-ray lithography. As for the X-rays 2 generated by an X-ray source such as synchrotron radiation (not shown), only light rays (X-rays) in a desired soft X-ray region (4 nm to 15 nm as an example) are selectively passed by the filter 3,
The mask 4 is irradiated. A pattern corresponding to a semiconductor circuit or the like to be formed is formed on the mask 4. Unnecessary light of the X-ray 2 reflected by the mask 4 is cut by the slit 5 and the resolution of the image is improved. The X-ray 2 that has passed through the slit 5 is irradiated onto the wafer 7 on the stage 8 via the reflection optical system 6. The reflective optical system 6 has a concave mirror, a convex mirror, and the like, in which a mirror surface polished to the level of Å (angstrom) is coated with a multilayer film. The material, dimensions, etc. of the multilayer film are selected so that only the soft X-ray region in the above-mentioned wavelength region can be reflected. The surface of the wafer 7 is coated with a resist having a property of chemically changing when irradiated with X-rays, and a pattern image of the mask 4 is formed on the surface of the wafer 7 to correspond to the mask 4. The pattern is exposed on the resist.
【０００４】軟Ｘ線は大気に吸収されやすいため、フィ
ルタ３、マスク４、スリット５、反射光学系６、ウェハ
７およびステージ８は真空容器１０中に収納され、真空
ポンプ９により真空容器１０の内部が排気されることに
より内部空間Ｓが所定の真空度に維持されている。な
お、図示例は反射型のマスク４であるが、透過型のマス
クが用いられることもある。Since the soft X-rays are easily absorbed by the atmosphere, the filter 3, the mask 4, the slit 5, the reflection optical system 6, the wafer 7 and the stage 8 are housed in a vacuum container 10 and a vacuum pump 9 is used to remove the vacuum container 10. The interior space S is maintained at a predetermined vacuum degree by exhausting the interior. Note that the illustrated example is the reflective mask 4, but a transmissive mask may also be used.
【０００５】図４に示すＸ線縮小投影露光装置におい
て、可視光を用いた縮小投影露光装置におけるレジスト
を使用した場合、軟Ｘ線の波長領域ではレジストの吸収
率が高すぎるためにＸ線がレジストの表面だけで吸収さ
れてしまい、その表面でしか化学変化が起こらずにレジ
ストに形成されたパターンが十分に深くならず、実用に
供することが難しい。そこで、Ｘ線が照射されると分解
されてガス化するものが、Ｘ線縮小投影露光装置におけ
るレジストとしては有用である。Ｘ線が照射されてその
部分のレジストが分解されてガス化されると、Ｘ線が照
射された部分のレジストのみ次第に除去されてパターン
が深くなり、レジストの吸収率が高くても十分な深さの
パターンを得ることができる。この種のレジストとして
は例えばＰＢＳ（Poly Butene Sulfone）、ＰＭＰＳ（P
oly Methyl Pentene Sulfone）がある。In the X-ray reduction projection exposure apparatus shown in FIG. 4, when the resist in the reduction projection exposure apparatus using visible light is used, the X-rays are absorbed in the wavelength region of the soft X-rays because the absorption rate of the resist is too high. It is absorbed only on the surface of the resist, and the chemical change occurs only on that surface, and the pattern formed on the resist is not sufficiently deep, making it difficult to put into practical use. Therefore, what is decomposed and gasified when irradiated with X-rays is useful as a resist in an X-ray reduction projection exposure apparatus. When X-rays are irradiated and the resist in that part is decomposed and gasified, only the resist in the part irradiated with X-rays is gradually removed and the pattern becomes deep, and even if the absorptivity of the resist is high, a sufficient depth is obtained. You can get the pattern of Sasaki. Examples of this type of resist include PBS (Poly Butene Sulfone), PMPS (P
oly Methyl Pentene Sulfone) is available.
【０００６】レジストのガス化は、レジストを構成する
高分子間の鎖が軟Ｘ線の照射によりほとんど完全に切れ
ることにより説明され、可視光用のレジストが、可視光
の照射により高分子間の鎖が部分的に切れ、あるいは新
たにつながることにより薬品に対する耐溶解性が変化す
ることと対比される。Gasification of the resist is explained by the fact that the chains between the polymers that make up the resist are almost completely broken by irradiation with soft X-rays. This is in contrast to the change in solubility resistance to chemicals due to partial breakage or reconnection of chains.
【０００７】[0007]
【発明が解決しようとする課題】しかしながら、従来の
Ｘ線縮小投影露光装置にあっては、レジストへ軟Ｘ線が
照射、露光されるとこのレジストからガスおよびレジス
トの分解生成物が発生し、このガスあるいは分解生成物
が反射光学系６に付着して反射率の低下、反射率のムラ
等を引き起こすという問題があった。特に、上述のよう
に、反射光学系６はÅレベルという極めて高い鏡面精度
が要求されるため、わずかな付着物が著しい性能低下の
原因となる。また、レジストから発生したガスにより真
空容器１０内の真空度が低下し、このガスにより露光光
である軟Ｘ線２が吸収されてしまうので、１回の露光に
かかる時間が長くなるという問題もあった。However, in the conventional X-ray reduction projection exposure apparatus, when the resist is irradiated with soft X-rays and exposed, gas and decomposition products of the resist are generated from this resist, There is a problem that the gas or the decomposition product adheres to the reflective optical system 6 to cause a decrease in reflectance and unevenness in reflectance. In particular, as described above, the reflective optical system 6 is required to have an extremely high mirror surface accuracy of Å level, and therefore a slight amount of attached matter causes a significant deterioration in performance. In addition, the gas generated from the resist lowers the degree of vacuum in the vacuum container 10, and the soft X-rays 2 that are exposure light are absorbed by this gas, so that the time required for one exposure becomes long. there were.
【０００８】本発明の目的は、ガス発生に伴う光学系の
性能低下を防止し、かつ、使用に伴う露光時間の長時間
化を防ぐことの可能なＸ線露光装置を提供することにあ
る。An object of the present invention is to provide an X-ray exposure apparatus capable of preventing the performance of the optical system from deteriorating due to gas generation and preventing the exposure time from being lengthened due to use.
【０００９】[0009]
【課題を解決するための手段】一実施例を示す図１に対
応付けて説明すると、本発明はＸ線源で発生されたＸ線
２をウェハ７上に照射してこのウェハ７上にパターンを
投影するＸ線露光光学系６を備えたＸ線露光装置に適用
される。そして、上述の目的は、前記Ｘ線２の照射によ
り前記ウェハ７から発生する物質が前記Ｘ線露光光学系
６に影響を及ぼさないように前記ウェハ７を前記Ｘ線露
光光学系６から隔離配置することにより達成される。こ
こで、前記Ｘ線露光光学系６が配置される空間Ｓ2およ
び前記ウェハ７が配置される空間Ｓ1を個別に真空状態
にする一対の排気装置９ａ、９ｂを設けてもよい。The present invention will be described with reference to FIG. 1 showing an embodiment. In the present invention, an X-ray 2 generated by an X-ray source is irradiated onto a wafer 7 to form a pattern on the wafer 7. It is applied to an X-ray exposure apparatus provided with an X-ray exposure optical system 6 for projecting. The above-mentioned object is to dispose the wafer 7 away from the X-ray exposure optical system 6 so that the substance generated from the wafer 7 by the irradiation of the X-rays 2 does not affect the X-ray exposure optical system 6. It is achieved by Here, a pair of exhaust devices 9a and 9b may be provided to individually bring the space S 2 in which the X-ray exposure optical system 6 is arranged and the space S 1 in which the wafer 7 is arranged into a vacuum state.
【００１０】[0010]
【作用】ウェハ７がＸ線露光光学系６から隔離配置され
ているので、Ｘ線２によるウェハ７の露光に伴ってこの
ウェハ７から発生するガスや分解生成物がＸ線露光光学
系６に付着することが防止されるとともに、ガスや分解
生成物によってＸ線露光光学系６近傍の真空度が低下す
ることが防止される。Since the wafer 7 is arranged so as to be separated from the X-ray exposure optical system 6, gas and decomposition products generated from the wafer 7 due to the exposure of the wafer 7 by the X-rays 2 are transmitted to the X-ray exposure optical system 6. The adhesion is prevented, and the degree of vacuum in the vicinity of the X-ray exposure optical system 6 is prevented from being lowered by the gas and the decomposition products.
【００１１】なお、本発明の構成を説明する上記課題を
解決するための手段と作用の項では、本発明を分かり易
くするために実施例の図を用いたが、これにより本発明
が実施例に限定されるものではない。Incidentally, in the section of means and action for solving the above problems for explaining the constitution of the present invention, the drawings of the embodiments are used for making the present invention easy to understand. It is not limited to.
【００１２】[0012]
−第１実施例− 図１は、本発明によるＸ線露光装置の第１実施例が適用
されたＸ線縮小投影露光装置を示す概略図である。な
お、以下の説明において、上述の従来例と同様の構成要
素については同一の符号を付し、相違点を中心に説明す
ることで全体の説明を簡略化する。First Embodiment FIG. 1 is a schematic diagram showing an X-ray reduction projection exposure apparatus to which the first embodiment of the X-ray exposure apparatus according to the present invention is applied. In the following description, the same components as those in the above-mentioned conventional example are designated by the same reference numerals, and the description will be simplified by focusing on the differences.
【００１３】本実施例のＸ線縮小投影露光装置の特徴
は、真空容器１０内の空間Ｓを仕切板１により試料室Ｓ
1および光学系室Ｓ2に区画し、試料室Ｓ1内に位置する
ウェハ７を、光学系室Ｓ2内に配置された残りの構成要
素であるマスク４、反射光学系６等から隔離配置したこ
とである。仕切板１には、反射光学系６からウェハ７へ
のＸ線２の光路上に形成され、このＸ線２が通過可能な
大きさを有する開口部１ａが形成されている。この開口
部１ａの大きさはＸ線２が通過可能な最低限の大きさと
され、一例として２mm×30mm程度の小孔である。通常、
試料室Ｓ1および光学系室Ｓ2の大きさは最低でも５ｍ3
程度はあるため、試料室Ｓ1および光学系室Ｓ2の真空度
が異なっていても開口部１ａの存在によりこれら両室Ｓ
1、Ｓ2の真空度が同じになることはないと考えられる。
また、真空容器１０には、試料室Ｓ1および光学系室Ｓ2
の内部をそれぞれ排気する真空ポンプ９ａ、９ｂが設け
られている。The feature of the X-ray reduction projection exposure apparatus of this embodiment is that the space S in the vacuum container 10 is divided by the partition plate 1 into the sample chamber S.
1 and the optical system chamber S 2 and the wafer 7 located in the sample chamber S 1 is separated from the mask 4, the reflection optical system 6 and the like which are the remaining components arranged in the optical system chamber S 2 . That is what I did. The partition plate 1 has an opening 1a formed on the optical path of the X-ray 2 from the reflective optical system 6 to the wafer 7 and having a size through which the X-ray 2 can pass. The size of the opening 1a is the minimum size through which the X-ray 2 can pass, and is, for example, a small hole of about 2 mm × 30 mm. Normal,
The size of the sample chamber S 1 and the optical system chamber S 2 is at least 5 m 3
Since the sample chamber S 1 and the optical system chamber S 2 have different degrees of vacuum, the presence of the opening 1a prevents both the chamber S 1 and the optical system chamber S 2 from having different degrees of vacuum.
It is considered that the vacuum degrees of 1 and S 2 are not the same.
Further, the vacuum chamber 10 includes a sample chamber S 1 and an optical system chamber S 2
Vacuum pumps 9a and 9b are provided for exhausting the inside of the chamber.
【００１４】以上のような構成を有するＸ線縮小投影露
光装置において、Ｘ線２によりウェハ７の表面に塗付さ
れたレジストが露光されると、Ｘ線２が照射した部分の
レジストがガス化して取り除かれ、マスク４に対応した
パターンがレジストに形成される。ガス化されたレジス
トおよびレジストの分解生成物は試料室Ｓ1内に拡散さ
れるが、仕切板１には微小な開口部１ａしか形成されて
いないためにこれらガスおよび分解生成物のうち開口部
１ａを通って光学系室Ｓ2内へ至るものはほとんどな
い。したがって、ガスおよび分解生成物が光学系室Ｓ2
内へ拡散してこの光学系室Ｓ2内の真空度が低下するこ
とが防止され、光学系室Ｓ2内におけるＸ線２の吸収が
抑制されて１回の露光時間が長時間になることが防止さ
れる。加えて、ガスおよび分解生成物が反射光学系６に
付着してこの光学系の性能が低下することもない。In the X-ray reduction projection exposure apparatus having the above structure, when the resist applied to the surface of the wafer 7 is exposed by the X-ray 2, the resist in the portion irradiated by the X-ray 2 is gasified. Then, a pattern corresponding to the mask 4 is formed on the resist. The gasified resist and the decomposition products of the resist are diffused into the sample chamber S 1. However, since only a minute opening 1a is formed in the partition plate 1, the opening of the gas and the decomposition products is formed. There is almost nothing that passes through 1a into the optical system chamber S 2 . Therefore, the gas and the decomposition products are not contained in the optical system chamber S 2
It is prevented that the degree of vacuum inside the optical system chamber S 2 is lowered due to diffusion into the inside of the optical system chamber, the absorption of X-rays 2 in the optical system chamber S 2 is suppressed, and one exposure time becomes long. Is prevented. In addition, the gas and the decomposition products do not adhere to the reflective optical system 6 and the performance of this optical system is not deteriorated.
【００１５】また、真空容器１０内の空間Ｓを試料室Ｓ
1および光学系室Ｓ2に区分することにより、図示のごと
く各室Ｓ1、Ｓ2に対応して真空ポンプ９ａ、９ｂを設け
ることができ、これにより各室Ｓ1、Ｓ2の真空度を個別
に制御できて合理的かつ経済的制御が可能となる。Further, the space S in the vacuum container 10 is set to the sample chamber S.
By partitioning to 1 and the optical system chamber S 2, the vacuum pump 9a in correspondence with each chamber S 1, S 2 as shown in the drawing, can be provided 9b, thereby chambers S 1, S 2 of the vacuum Can be controlled individually, and rational and economical control is possible.
【００１６】なお、試料室Ｓ1内においてはガスおよび
分解生成物が拡散し、Ｘ線２が吸収されてその強度が若
干弱められるものの、Ｘ線２の全光路に対する試料室Ｓ
1内の光路の割合は十分小さいため、真空容器１０全体
にガス等が拡散する場合に比較してＸ線２の吸収割合は
十分低くなる。Although the gas and the decomposition products are diffused in the sample chamber S 1 and the X-rays 2 are absorbed and the intensity thereof is slightly weakened, the sample chamber S 1 with respect to the entire optical path of the X-rays 2 is absorbed.
Since the ratio of the optical path in 1 is sufficiently small, the absorption ratio of X-rays 2 becomes sufficiently low as compared with the case where gas or the like diffuses throughout the vacuum container 10.
【００１７】〔実験例〕図１に示すような構成のＸ線縮
小投影露光装置を用いてウェハ７の露光を行った。試料
室Ｓ1内で発生したガスが極力光学系室Ｓ2内に流れない
ように、開口部１ａをウェハ７の直前に設置した。レジ
ストにはＰＢＳを用いた。露光装置の真空度は、露光開
始前において光学系室Ｓ2内が10ー5Pa、試料室Ｓ1内が10
ー2Paであった。試料室Ｓ1内の真空度が悪いのは、ウェ
ハ７表面にレジストを塗付した際にこのレジスト内に閉
じ込められた空気が、試料室Ｓ1内にウェハ７を配置し
た時から試料室Ｓ1内に放出されるためである。[Experimental Example] The wafer 7 was exposed using the X-ray reduction projection exposure apparatus having the configuration shown in FIG. The opening 1a was placed immediately in front of the wafer 7 so that the gas generated in the sample chamber S 1 did not flow into the optical system chamber S 2 as much as possible. PBS was used for the resist. The degree of vacuum of the exposure apparatus is 10-5 Pa in the optical system chamber S 2 and 10 in the sample chamber S 1 before the exposure is started.
It was 2 Pa. The poor vacuum of the sample chamber S 1, the sample chamber S from the time the air trapped in the resist when subjected coated resist on the wafer 7 surface, was placed wafer 7 into the sample chamber S 1 This is because it is released within 1 .
【００１８】露光開始と共に試料室Ｓ1内の真空度は10
ー1Paに低下したが、光学系室Ｓ2内の真空度は終始一定
であった。つまり、レジストから発生したガスがほとん
ど光学系室Ｓ2内に流れなかったことを示している。真
空度の低下は露光光であるＸ線２の吸収の増加を意味す
るが、真空度が低下しなかったので、１回の露光時間も
終始同時間であった。また、露光を1000時間行った後に
反射光学系６を検査したところ、付着物は見られなかっ
た。When the exposure is started, the degree of vacuum in the sample chamber S 1 is 10
It dropped to over 1 Pa, but the vacuum degree of the optical system chamber S 2 was throughout constant. That is, almost no gas generated from the resist flows into the optical system chamber S 2 . A decrease in the degree of vacuum means an increase in absorption of X-rays 2 as exposure light, but since the degree of vacuum did not decrease, the exposure time for one exposure was the same throughout. Further, when the reflective optical system 6 was inspected after exposure for 1000 hours, no deposit was found.
【００１９】比較のために、仕切板１を取り外し、従来
の方法でも同様の実験を行った。露光開始と共に試料室
Ｓ1付近の真空度が低下しただけでなく、露光を続ける
に連れて光学系室Ｓ2内の真空度も10ー2Paまで低下し
た。この真空度の低下により、Ｘ線の吸収が大きくなり
１回の露光時間が徐々に長くなった。実験例および比較
となる従来例における露光時間の変化を図２に示す。ま
た、1000時間の露光を終えた後で反射光学系６を検査し
たところ、光学系の一部に付着物がみられた。For comparison, the partition plate 1 was removed and the same experiment was conducted by the conventional method. Not only did the degree of vacuum near the sample chamber S 1 drop with the start of exposure, but also the degree of vacuum in the optical system chamber S 2 dropped to 10 −2 Pa as the exposure continued. Due to this decrease in the degree of vacuum, the absorption of X-rays increased and the exposure time for one exposure gradually became longer. FIG. 2 shows changes in the exposure time in the experimental example and the comparative conventional example. Further, when the reflective optical system 6 was inspected after the exposure for 1000 hours, deposits were found on a part of the optical system.
【００２０】−第２実施例− 図３は、本発明によるＸ線露光装置の第２実施例が適用
されたＸ線縮小投影露光装置を示す概略図である。本実
施例では、揺動ミラー１１を介してシンクロトロン放射
光光源から放射光が光学系室Ｓ2内に導入されている。
これは、シンクロトロンからの放射光の断面が小さく細
長い形状をしているために大面積の領域を一度に露光す
ることができないので、揺動ミラー１１により放射光を
掃引して露光面積を拡大しているためである。揺動ミラ
ー１１の揺動によりＸ線２の光路は所定方向に掃引され
（図３では実線および点線で示す）、ある瞬間では狭い
領域しか露光できないものの、時間平均では大面積の領
域が露光可能となる。-Second Embodiment- FIG. 3 is a schematic view showing an X-ray reduction projection exposure apparatus to which the second embodiment of the X-ray exposure apparatus according to the present invention is applied. In this embodiment, radiation light is introduced from the synchrotron radiation light source into the optical system chamber S 2 via the oscillating mirror 11.
This is because the radiated light from the synchrotron has a small cross section and has an elongated shape, so that it is not possible to expose a large area at a time, so the oscillating mirror 11 sweeps the radiated light to expand the exposed area. This is because The optical path of the X-ray 2 is swept in a predetermined direction by the swing of the swing mirror 11 (shown by a solid line and a dotted line in FIG. 3), and only a small area can be exposed at a certain moment, but a large area can be exposed on a time average basis. Becomes
【００２１】この際、揺動ミラー１１によってＸ線２が
掃引されても仕切板１の開口部１ａがＸ線２の通過を邪
魔しない程度に開口部１ａが大きく形成できればよい
が、仕切板１の開口部１ａは、各室Ｓ1、Ｓ2の真空度を
維持し、かつＸ線２を通過させるという相反する条件を
満足する必要があるため、可能な限り小さいことが好ま
しい。このため、本実施例では、不図示の往復動手段に
より、揺動ミラー１１によるＸ線２の掃引に同期して仕
切板１の開口部１ａを図中上下に往復動させることによ
り、開口部１ａの大きさを最低限のものに抑えつつＸ線
２を掃引させて大面積の領域を露光することが可能とな
る。At this time, it is sufficient if the opening 1a can be formed so large that the opening 1a of the partition plate 1 does not interfere with the passage of the X-ray 2 even if the X-ray 2 is swept by the swing mirror 11. Since it is necessary to satisfy the contradictory conditions of maintaining the degree of vacuum in the chambers S 1 and S 2 and allowing the X-rays 2 to pass through, the opening 1a of 1 is preferably as small as possible. For this reason, in the present embodiment, the opening / closing portion 1a of the partition plate 1 is reciprocally moved up and down in the figure by a reciprocating means (not shown) in synchronism with the sweeping of the X-ray 2 by the oscillating mirror 11. It is possible to expose the large area by sweeping the X-ray 2 while suppressing the size of 1a to the minimum.
【００２２】なお、本発明のＸ線露光装置は、その細部
が上述の各実施例に限定されず、種々の変形が可能であ
る。一例として、上述の各実施例は縮小露光投影装置、
すなわちマスク４のパターンを縮小してウェハ７上に露
光させる構成のものであったが、いわゆるプロキシミテ
ィ露光などマスク４のパターンを等倍率でウェハ７上に
露光させる構成の露光装置にも適用可能である。The details of the X-ray exposure apparatus of the present invention are not limited to the above-mentioned embodiments, and various modifications are possible. As an example, each of the above-described embodiments is a reduction exposure projection device,
That is, the pattern of the mask 4 is reduced and exposed on the wafer 7, but it is also applicable to an exposure apparatus such as so-called proximity exposure in which the pattern of the mask 4 is exposed on the wafer 7 at an equal magnification. Is.
【００２３】[0023]
【発明の効果】以上詳細に説明したように、本発明によ
れば、Ｘ線の照射によりウェハから発生するガス、分解
生成物等の物質がＸ線露光光学系に影響を及ぼさないよ
うにウェハをＸ線露光光学系から隔離配置したので、こ
の物質によりＸ線露光光学系近傍の真空度が低下するこ
とが防止され、ウェハからの物質によるＸ線の吸収が抑
制されて１回の露光時間が長時間になることが防止され
る。これは装置のスループットの向上に結びつき、生産
効率の大幅な改善が可能となる。加えて、ウェハからの
物質がＸ線露光光学系に付着してこの光学系の性能が低
下することもない。これにより長期間にわたって安定し
て露光を行うことが可能となる。As described in detail above, according to the present invention, a substance such as a gas or a decomposition product generated from a wafer upon irradiation with X-rays does not affect the X-ray exposure optical system. Is separated from the X-ray exposure optical system, the vacuum degree near the X-ray exposure optical system is prevented from being lowered by this substance, and the absorption of X-rays by the substance from the wafer is suppressed, so that the exposure time of one exposure is reduced. Is prevented from becoming a long time. This leads to an improvement in the throughput of the device, which makes it possible to greatly improve the production efficiency. In addition, the substance from the wafer does not adhere to the X-ray exposure optical system and the performance of this optical system is not deteriorated. This makes it possible to perform stable exposure over a long period of time.
【図１】本発明によるＸ線露光装置の第１実施例が適用
されたＸ線縮小投影露光装置を示す概略図である。FIG. 1 is a schematic diagram showing an X-ray reduction projection exposure apparatus to which an X-ray exposure apparatus according to a first embodiment of the present invention is applied.
【図２】露光時間とウェハ投入経過時間との関係を示す
図である。FIG. 2 is a diagram showing a relationship between an exposure time and a wafer loading elapsed time.
【図３】本発明によるＸ線露光装置の第２実施例が適用
されたＸ線縮小投影露光装置を示す概略図である。FIG. 3 is a schematic diagram showing an X-ray reduction projection exposure apparatus to which a second embodiment of the X-ray exposure apparatus according to the present invention is applied.
【図４】従来のＸ線縮小投影露光装置を示す図である。FIG. 4 is a diagram showing a conventional X-ray reduction projection exposure apparatus.
Ｓ 真空空間 Ｓ1 試料室 Ｓ2 光学系室 １ 仕切板 １ａ 開口部 ２ Ｘ線 ３ フィルター ４ マスク ５ スリット ６ 反射光学系 ７ ウェハ ８ ステージ ９ 真空ポンプ １０ 真空容器S Vacuum space S 1 Sample chamber S 2 Optical system chamber 1 Partition plate 1a Opening 2 X-ray 3 Filter 4 Mask 5 Slit 6 Reflective optical system 7 Wafer 8 Stage 9 Vacuum pump 10 Vacuum container
───────────────────────────────────────────────────── フロントページの続き (72)発明者 田中 稔彦 茨城県つくば市和台16−１ 株式会社ソル テック筑波研究所内 (72)発明者 前島 幸彦 茨城県つくば市和台16−１ 株式会社ソル テック筑波研究所内 (72)発明者 阿刀田 伸史 茨城県つくば市和台16−１ 株式会社ソル テック筑波研究所内 ─────────────────────────────────────────────────── ─── Continued Front Page (72) Inventor Toshihiko Tanaka 16-1 Wadai, Tsukuba, Ibaraki Prefecture Sol Tech Tsukuba Research Institute (72) Inventor Yukihiko Maejima 16-1, Wadai, Tsukuba, Ibaraki Sol Tech Co., Ltd. Tsukuba Research Center (72) Inventor Nobufumi Atsuta 16-1 Wadai, Tsukuba City, Ibaraki Prefecture Sol Tech Tsukuba Research Center
Claims (2)
射してこのウェハ上にパターンを投影するＸ線露光光学
系を備えたＸ線露光装置において、 前記Ｘ線の照射により前記ウェハから発生する物質が前
記Ｘ線露光光学系に影響を及ぼさないように前記ウェハ
を前記Ｘ線露光光学系から隔離配置したことを特徴とす
るＸ線露光装置。1. An X-ray exposure apparatus equipped with an X-ray exposure optical system for irradiating a wafer with X-rays generated by an X-ray source and projecting a pattern on the wafer, An X-ray exposure apparatus, characterized in that the wafer is separated from the X-ray exposure optical system so that a substance generated from the wafer does not affect the X-ray exposure optical system.
て、 前記Ｘ線露光光学系が配置される空間および前記ウェハ
が配置される空間を個別に真空状態にする一対の排気装
置を備えたことを特徴とするＸ線露光装置。2. The X-ray exposure apparatus according to claim 1, further comprising a pair of exhaust devices that individually vacuum the space in which the X-ray exposure optical system is arranged and the space in which the wafer is arranged. An X-ray exposure apparatus characterized by the above.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5132011A JPH06342100A (en) | 1993-06-02 | 1993-06-02 | X-ray exposure device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5132011A JPH06342100A (en) | 1993-06-02 | 1993-06-02 | X-ray exposure device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06342100A true JPH06342100A (en) | 1994-12-13 |
Family
ID=15071454
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5132011A Pending JPH06342100A (en) | 1993-06-02 | 1993-06-02 | X-ray exposure device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06342100A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006287003A (en) * | 2005-04-01 | 2006-10-19 | Tohoku Univ | Exposure device |
| JP2010503980A (en) * | 2006-09-19 | 2010-02-04 | カール・ツァイス・エスエムティー・アーゲー | Optical apparatus, particularly projection exposure apparatus for EUV lithography and reflective optical element with less contamination |
-
1993
- 1993-06-02 JP JP5132011A patent/JPH06342100A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006287003A (en) * | 2005-04-01 | 2006-10-19 | Tohoku Univ | Exposure device |
| JP2010503980A (en) * | 2006-09-19 | 2010-02-04 | カール・ツァイス・エスエムティー・アーゲー | Optical apparatus, particularly projection exposure apparatus for EUV lithography and reflective optical element with less contamination |
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