JPH06338729A - Bias circuit - Google Patents

Bias circuit

Info

Publication number
JPH06338729A
JPH06338729A JP15157493A JP15157493A JPH06338729A JP H06338729 A JPH06338729 A JP H06338729A JP 15157493 A JP15157493 A JP 15157493A JP 15157493 A JP15157493 A JP 15157493A JP H06338729 A JPH06338729 A JP H06338729A
Authority
JP
Japan
Prior art keywords
circuit
current
base
reference voltage
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15157493A
Other languages
Japanese (ja)
Inventor
Yoji Makishima
洋二 巻島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Radio Co Ltd
Original Assignee
Japan Radio Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Radio Co Ltd filed Critical Japan Radio Co Ltd
Priority to JP15157493A priority Critical patent/JPH06338729A/en
Publication of JPH06338729A publication Critical patent/JPH06338729A/en
Pending legal-status Critical Current

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  • Control Of Amplification And Gain Control (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:To improve the voltage use rate and to obtain a satisfactory linearity by setting the collector current of a transistor TR, which has the emitter directly grounded, to an optimum value by a current detecting circuit and detecting the minute change of the collector current with a satisfactory sensitivity and comparing it with the reference voltage preliminarily set by a differential amplifying circuit and changing it to a current value corresponding to the difference to feed back this value to the base of the TR. CONSTITUTION:A current detecting circuit 1 of small loss is interposed between a tuning circuit C2 and a low voltage power source, and a differential amplifying circuit 2 is connected to its detection output side, and the output side is connected to the base of a TR TR1. The passing current and the detection sensitivity of the current detecting circuit 1 and the reference voltage of the differential amplifying circuit 2 are set by a memory circuit 4 where data outputted from a control circuit 3 is stored. The output of the current detecting circuit 1 and the reference voltage are compared with each other by the differential amplifying circuit 2, and the output generated by this comparison is fed back to the base of the TR TR1.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、携帯電話機の受信部等
高度な直線性が要求される高周波増幅器のトランジスタ
又はFETのバイアス回路に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a bias circuit for a transistor or FET of a high frequency amplifier which requires a high degree of linearity such as a receiver of a mobile phone.

【0002】[0002]

【従来の技術】従来、携帯形電話機等の高周波増幅器は
低電圧電源により給電されており、図3に示すエミッタ
接地形回路が通常用いられる。C1 、C4 は結合コンデ
ンサ、C2 、L1 は同調回路の要素、C3 、C5 は交流
バイパス用コンデンサ、R3 はエミッタ抵抗であり、抵
抗R3 の電圧降下によりトランジスタTR1 の動作点が
安定化される。
2. Description of the Related Art Conventionally, a high frequency amplifier of a portable telephone or the like is fed by a low voltage power source, and a grounded emitter type circuit shown in FIG. 3 is usually used. C 1 and C 4 are coupling capacitors, C 2 and L 1 are elements of the tuning circuit, C 3 and C 5 are AC bypass capacitors, R 3 is an emitter resistor, and the voltage drop across the resistor R 3 causes the transistor TR 1 to drop. The operating point is stabilized.

【0003】他に図4のエミッタ直接接地形回路があ
り、抵抗R5 に流れるコレクタ電流により、ベース電流
を制御して動作点を安定化している。
In addition, there is an emitter direct grounded circuit of FIG. 4, in which the base current is controlled by the collector current flowing through the resistor R 5 to stabilize the operating point.

【0004】[0004]

【発明が解決しようとする課題】携帯形電話機等の受信
部は一般に低電圧電源により給電されているが、その効
率的な利用が不可欠である。すなわちトランジスタのコ
レクタ・エミッタ間(FETではドレイン・ソース間)
の効率(電圧利用率)を大とし、これにより良好な直線
性を得て相互変調等を減少させることが必要である。
The receiving portion of a portable telephone or the like is generally supplied with power from a low voltage power source, but efficient use thereof is indispensable. That is, between the collector and emitter of the transistor (between the drain and source of the FET)
It is necessary to increase the efficiency (voltage utilization rate) of (1) to obtain good linearity and reduce intermodulation.

【0005】図3の回路では、低電圧電源の電圧はエミ
ッタ抵抗の電圧降下とコレクタ・エミッタ間電圧に分割
されており、また図4の回路はコレクタ電流とベース電
流が共通に流れる抵抗R5 が安定度の点からも比較的大
きな値をとるため、いずれの回路も電圧利用率が悪いと
いう欠点がある。
[0005] In the circuit of Figure 3, the voltage of the low voltage power supply is divided into the voltage drop and the collector-emitter voltage of the emitter resistor and the circuit of Figure 4 is the collector current and the base current common flow resistor R 5 Also takes a relatively large value from the viewpoint of stability, so that each circuit has a drawback that the voltage utilization rate is poor.

【0006】[0006]

【課題を解決するための手段】本発明はこれらの課題を
解決するため、エミッタを直接接地したトランジスタの
コレクタ電流を電流検出回路において最適値に設定され
ると共にコレクタ電流の僅かな変化を良好な感度で検出
し、これを差動増幅回路で予め設定した基準電圧と比較
し、差に相当する電流値に変えトランジスタのベースへ
帰還する構成である。
In order to solve these problems, the present invention sets the collector current of a transistor whose emitter is directly grounded to an optimum value in a current detection circuit and makes a small change in the collector current good. The configuration is such that it is detected with sensitivity, compared with a preset reference voltage by a differential amplifier circuit, converted into a current value corresponding to the difference, and fed back to the base of the transistor.

【0007】また、電流検出回路内ではコレクタ電流に
よる電圧降下を僅少とするものである。以下実施例につ
き図面により詳細に説明する。
Further, the voltage drop due to the collector current is made small in the current detection circuit. Hereinafter, embodiments will be described in detail with reference to the drawings.

【0008】[0008]

【実施例】図1は実施例を示す増幅器の構成図で、増幅
回路はエミッタ直接接地形トランジスタTR1 1段の場
合を示している。同図において1は電流検出回路、2は
差動増幅回路、3は制御回路、4はメモリ回路である。
DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a block diagram of an amplifier showing an embodiment, in which an amplifier circuit is a direct emitter-grounded transistor TR 1 having one stage. In the figure, 1 is a current detection circuit, 2 is a differential amplifier circuit, 3 is a control circuit, and 4 is a memory circuit.

【0009】増幅回路はトランジスタTR1 、結合コン
デンサC1 、C4 、同調回路C2 、L1 及び交流接地用
コンデンサC3 から構成される。同調回路と低電圧電源
との間には、低損失の電流検出回路1が介在し、その検
出出力側に差動増幅回路2が接続され、その出力側はト
ランジスタTR1 のベースに接続される。制御回路3に
よる制御信号は、メモリ回路4にトランジスタTR1
動作点設定、検出感度設定、基準電圧Vr の各データを
格納する。メモリ回路4からは電流検出回路1、差動増
幅回路2へそれぞれ必要なデータを出力する。
The amplifier circuit comprises a transistor TR 1 , coupling capacitors C 1 and C 4 , tuning circuits C 2 and L 1, and an AC grounding capacitor C 3 . A low-loss current detection circuit 1 is interposed between the tuning circuit and the low-voltage power supply, a differential amplifier circuit 2 is connected to the detection output side, and the output side is connected to the base of the transistor TR 1. . The control signal from the control circuit 3 stores each data of the operating point setting, the detection sensitivity setting, and the reference voltage V r of the transistor TR 1 in the memory circuit 4. The memory circuit 4 outputs necessary data to the current detection circuit 1 and the differential amplifier circuit 2, respectively.

【0010】次に図2により電流検出回路1と差動増幅
回路2の動作につき説明する。TR2 、TR3 のコレク
タ電流をI2 、I3 、エミッタ・ベース電圧をVBE2
BE3 、ベース電流をIB2、IB3、R1 を流れる電流を
0 、基準電圧をVr とすると、 R1 0 +VBE2 =VBE3 ……… (1) R2 2 =Vr ……… (2) いま、I0 >>I2 、IB2<<I3 となるようにT
2 、TR3 、R1 、R2を選ぶと、定電流回路A1に
よりI3 はほぼ一定となり、VBE3 もほぼ一定となる。
Next, the operation of the current detection circuit 1 and the differential amplifier circuit 2 will be described with reference to FIG. The collector currents of TR 2 and TR 3 are I 2 , I 3 , the emitter-base voltage is V BE2 ,
V BE3 , base current I B2 , I B3 , current flowing through R 1 is I 0 , and reference voltage is V r , R 1 I 0 + V BE2 = V BE3 (1) R 2 I 2 = V r ……… (2) Now, T so that I 0 >> I 2 and I B2 << I 3
When R 2 , TR 3 , R 1 and R 2 are selected, the constant current circuit A1 makes I 3 almost constant and V BE3 also almost constant.

【0011】ここで増幅回路に流れる電流が温度変化等
により増加するとI0 1 が大となり、(1)式よりV
BE2 は小、I2 も小となる。I2 が小となるとR2 2
が小となり、差動増幅回路2の出力も小となり増幅回路
トランジスタのバイアス電流(ベース電流)が小となっ
てI0 が減少する。これによりR1 0 は元の値に戻り
変化が抑圧される。つまりトランジスタの動作点の安定
が維持される。これらのことから、TR2 、TR3 、R
1 、R2 、Vr を適当に選ぶことによってI0の設定が
できる。ここでR1 0 は0.1V程度であるので、増
幅回路のコレクタ・エミッタ間電圧が電源電圧とほぼ同
じになり電圧利用率が向上する。
Here, when the current flowing through the amplifier circuit increases due to a temperature change or the like, I 0 R 1 becomes large, and from the equation (1), V 0 can be obtained.
BE2 is small, I 2 also becomes small. When I 2 becomes small, R 2 I 2
Becomes small, the output of the differential amplifier circuit 2 becomes small, the bias current (base current) of the amplifier circuit transistor becomes small, and I 0 decreases. As a result, R 1 I 0 returns to the original value and the change is suppressed. That is, the stability of the operating point of the transistor is maintained. From these things, TR 2 , TR 3 , R
I 0 can be set by appropriately selecting 1 , R 2 and V r . Here, since R 1 I 0 is about 0.1 V, the collector-emitter voltage of the amplifier circuit becomes substantially the same as the power supply voltage, and the voltage utilization rate improves.

【0012】また、図1に示すように、制御回路3を介
してI0 、検出感度、基準電圧Vr等の適切な値をメモ
リ回路4へ格納しておくことにより安定度の良好な増幅
器を得ることができる。
Further, as shown in FIG. 1, an appropriate value of stability such as I 0 , detection sensitivity, reference voltage V r, etc. is stored in the memory circuit 4 via the control circuit 3. Can be obtained.

【0013】多段接続の増幅回路の場合には、各段のバ
イアス回路をまとめてIC化することにより部品点数の
増加が防止できて小形化が図れ、更に各部から各電流値
の設定等を行うようにすることにより機能性と汎用性の
向上が期待できる。
In the case of an amplifier circuit of multi-stage connection, by increasing the number of parts by increasing the number of parts by integrating the bias circuits of each stage into an IC, each current value can be set from each section. By doing so, improvement in functionality and versatility can be expected.

【0014】なお、本バイアス回路は電源電圧が高い場
合にも適用できる。
The bias circuit can be applied even when the power supply voltage is high.

【0015】[0015]

【発明の効果】以上説明したように、増幅回路のトラン
ジスタのコレクタ・エミッタ電圧は電源電圧とほぼ同じ
値となるので、電圧利用率が向上し良好な直線性を得る
ことができる。
As described above, since the collector-emitter voltage of the transistor of the amplifier circuit has almost the same value as the power supply voltage, the voltage utilization rate is improved and good linearity can be obtained.

【0016】更に多段増幅器の場合もIC化が容易で小
形、低コストとなる。これらの点から規格の厳しい携帯
電話機等に極めて有効に適用できる。
Further, also in the case of a multistage amplifier, it is easy to form an IC, which is small in size and low in cost. From these points, it can be applied very effectively to mobile phones and the like with strict standards.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の実施例を示す構成図である。FIG. 1 is a configuration diagram showing an embodiment of the present invention.

【図2】バイアス回路の細部を示す回路図である。FIG. 2 is a circuit diagram showing details of a bias circuit.

【図3】従来例のエミッタ接地形回路図である。FIG. 3 is a circuit diagram of a grounded-emitter circuit of a conventional example.

【図4】従来例のエミッタ直接接地形回路図である。FIG. 4 is a circuit diagram of a conventional emitter direct grounding type circuit.

【符号の説明】[Explanation of symbols]

1 電流検出回路 2 差動増幅回路 3 制御回路 4 メモリ回路 1 current detection circuit 2 differential amplifier circuit 3 control circuit 4 memory circuit

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 低電圧電源により給電される増幅回路に
おいて、該増幅回路のトランジスタ(TR1 )のコレク
タ給電点とベース間に電流検出回路(1)と差動増幅回
路(2)とを接続し、制御回路(3)により出力された
データを記憶するメモリ回路(4)により前記電流検出
回路(1)の通過電流、検出感度と、前記差動増幅回路
(2)の基準電圧(Vr )の設定を行い、前記差動増幅
回路(2)において前記電流検出回路(1)の出力と基
準電圧(Vr )を比較して生じた出力を前記トランジス
タ(TR1 )のベースに帰還するように構成したことを
特徴とするバイアス回路。
1. An amplifier circuit fed by a low voltage power source, wherein a current detection circuit (1) and a differential amplifier circuit (2) are connected between a collector feeding point and a base of a transistor (TR 1 ) of the amplifier circuit. Then, the memory circuit (4) for storing the data output by the control circuit (3) causes the passing current and detection sensitivity of the current detection circuit (1) and the reference voltage (V r of the differential amplifier circuit (2)). ) Is set, and the output generated by comparing the output of the current detection circuit (1) with the reference voltage (V r ) in the differential amplifier circuit (2) is fed back to the base of the transistor (TR 1 ). A bias circuit configured as described above.
JP15157493A 1993-05-28 1993-05-28 Bias circuit Pending JPH06338729A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15157493A JPH06338729A (en) 1993-05-28 1993-05-28 Bias circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15157493A JPH06338729A (en) 1993-05-28 1993-05-28 Bias circuit

Publications (1)

Publication Number Publication Date
JPH06338729A true JPH06338729A (en) 1994-12-06

Family

ID=15521501

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15157493A Pending JPH06338729A (en) 1993-05-28 1993-05-28 Bias circuit

Country Status (1)

Country Link
JP (1) JPH06338729A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002176368A (en) * 2001-07-11 2002-06-21 Nec Corp Transmission power controller capable of controlling optimization of bias current of transmission output amplifier
US6434373B2 (en) 1997-08-06 2002-08-13 Nec Corporation Transmission power control device capable of decreasing current consumption
JP2002534833A (en) * 1998-12-31 2002-10-15 ノキア モービル フォーンズ リミテッド Control of gain and power consumption in power amplifiers
WO2003073627A1 (en) * 2002-02-28 2003-09-04 Renesas Technology Corp. High-frequency power amplifier circuit and electronic part for communication

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6434373B2 (en) 1997-08-06 2002-08-13 Nec Corporation Transmission power control device capable of decreasing current consumption
JP2002534833A (en) * 1998-12-31 2002-10-15 ノキア モービル フォーンズ リミテッド Control of gain and power consumption in power amplifiers
JP2002176368A (en) * 2001-07-11 2002-06-21 Nec Corp Transmission power controller capable of controlling optimization of bias current of transmission output amplifier
WO2003073627A1 (en) * 2002-02-28 2003-09-04 Renesas Technology Corp. High-frequency power amplifier circuit and electronic part for communication
US7116173B2 (en) 2002-02-28 2006-10-03 Renesas Technology Corp. High-frequency power amplifier circuit and electronic part for communication
US7336132B2 (en) 2002-02-28 2008-02-26 Renesas Technology Corp. High-frequency power amplifier circuit and electronic part for communication

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