JPH06326503A - Dielectric filter - Google Patents

Dielectric filter

Info

Publication number
JPH06326503A
JPH06326503A JP11253093A JP11253093A JPH06326503A JP H06326503 A JPH06326503 A JP H06326503A JP 11253093 A JP11253093 A JP 11253093A JP 11253093 A JP11253093 A JP 11253093A JP H06326503 A JPH06326503 A JP H06326503A
Authority
JP
Japan
Prior art keywords
capacitor
substrate
capacitance
coupling
dielectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11253093A
Other languages
Japanese (ja)
Inventor
Minoru Matsudaira
実 松平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Priority to JP11253093A priority Critical patent/JPH06326503A/en
Publication of JPH06326503A publication Critical patent/JPH06326503A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To provide a dielectric filter of such an electrostatic capacity coupling structure that has the excellent temperature characteristics, the desired electrostatic capacity value of high precision and also a high degree of designing freedom. CONSTITUTION:A dielectric filter is provided with a coupling substrate 3 consisting of the capacitor electrodes 7, 8... which are formed on a dielectric board having the excellent temperature characteristic and the capacitors 11 and 12 which are prepared separately from the substrate 3. In such a constitution, the necessary electrostatic capacity is acquired with high precision.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、温度特性に優れかつ所
望の静電容量値の精度が良くしかも設計の自由度が高い
静電容量結合構造を持つ誘電体フィルタを提供するもの
である。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention provides a dielectric filter having a capacitance coupling structure which is excellent in temperature characteristics, has a high precision of a desired capacitance value, and has a high degree of freedom in design.

【0002】[0002]

【従来の技術】誘電体同軸共振器を用いた誘電体フィル
タの一例として例えば図5に斜視図として、また図6に
その等価回路として示す構造のものがある。この誘電体
フィルタ30は3つの誘電体同軸共振器2を並列配置し
て前記の各共振器2の開放側端面2b側に結合基板3を
配設し、これを図示しない金属ケ−ス内に収容して構成
し3段のバンドパスフィルタとして機能するものであ
る。
2. Description of the Related Art An example of a dielectric filter using a dielectric coaxial resonator is shown in a perspective view of FIG. 5 and an equivalent circuit thereof in FIG. In this dielectric filter 30, three dielectric coaxial resonators 2 are arranged in parallel, a coupling substrate 3 is arranged on the open side end face 2b side of each resonator 2, and this is placed in a metal case (not shown). It is housed and configured to function as a three-stage bandpass filter.

【0003】上記各同軸共振器2の軸芯に形成された共
振器孔4内には結合端子5が挿入されており、前記結合
端子5の一部は前記開放側端面2b側から突出してい
る。
A coupling terminal 5 is inserted into a resonator hole 4 formed in the axis of each coaxial resonator 2, and a part of the coupling terminal 5 projects from the open side end face 2b side. .

【0004】前記結合基板3の表面3aにはこれの長手
方向に伸びるくし形のコンデンサ電極7、8、9がパタ
−ン形成されており、前記各コンデンサ電極7、8、9
には前記同軸共振器2の結合端子5の先端が半田付け接
続されている。また前記結合基板3の裏面3bには前記
基板3を挟んで前記コンデンサ電極7、9と対向する図
示しないコンデンサ電極6、10がパタ−ン形成されて
いる。
On the surface 3a of the combined substrate 3, comb-shaped capacitor electrodes 7, 8 and 9 extending in the longitudinal direction thereof are formed by patterning, and each of the capacitor electrodes 7, 8 and 9 is formed.
The tip of the coupling terminal 5 of the coaxial resonator 2 is soldered to. Further, on the back surface 3b of the coupling substrate 3, capacitor electrodes 6, 10 (not shown) are formed so as to face the capacitor electrodes 7, 9 with the substrate 3 interposed therebetween.

【0005】前記各コンデンサ電極6、10には入、出
力端子13、14の一端部が半田付け接続されており、
他端部は前記の図示しない金属ケ−スから外方に突出し
ている。
One end of each of the input and output terminals 13 and 14 is soldered to each of the capacitor electrodes 6 and 10.
The other end projects outward from the metal case (not shown).

【0006】なお結合基板3の表面3aに形成されたコ
ンデンサ電極7、8、9を図2に、結合基板3の裏面3
bに形成されたコンデンサ電極6、10を図3に示す。
The capacitor electrodes 7, 8 and 9 formed on the front surface 3a of the combined substrate 3 are shown in FIG.
FIG. 3 shows the capacitor electrodes 6 and 10 formed on b.

【0007】以上の構造により電極6、7およびその間
に挟まれた結合基板3部分で容量C1を、電極7、8お
よびその間の結合基板3部分で容量C2を、電極8、9
およびその間の結合基板3部分で容量C3を、電極9、
10およびその間に挟まれた結合基板3部分で容量C4
を得ておりこれにより隣り合う同軸共振器2同士は容量
結合されている。
With the structure described above, the capacitor C1 is formed between the electrodes 6 and 7 and the portion of the combined substrate 3 sandwiched therebetween, the capacitor C2 is formed between the electrodes 7 and 8 and the portion of the combined substrate 3 interposed therebetween, and the electrodes 8 and 9
And the coupling substrate 3 portion between them, the capacitor C3 is connected to the electrode 9,
10 and the portion of the combined substrate 3 sandwiched between them, the capacitance C4
Therefore, the adjacent coaxial resonators 2 are capacitively coupled to each other.

【0008】[0008]

【発明が解決しようとする課題】ところが、温度特性に
優れかつ所望の静電容量値の精度が良い静電容量結合構
造を持つ誘電体フィルタを、前記構造で設計しようとす
る場合、結合基板として用いることのできる温度特性が
良好でかつ所定の寸法、形状で希望するような容量が得
られる材料からなる誘電体板は限られているのでその設
計は困難であった。
However, when designing a dielectric filter having a capacitive coupling structure having excellent temperature characteristics and a high precision of a desired capacitance value with the above structure, the dielectric filter is used as a coupling substrate. The design of the dielectric plate is difficult because there are a limited number of dielectric plates made of a material that can be used with good temperature characteristics and can obtain a desired capacitance with a predetermined size and shape.

【0009】これを解決する方法として結合基板を使用
せず例えば市販されているチップコンデンサを用いて容
量を得る方法があるが一般にチップコンデンサは容量バ
ラツキが大きく使いにくい。
As a method of solving this, there is a method of obtaining the capacitance by using, for example, a commercially available chip capacitor without using a coupling substrate, but in general, the chip capacitor has a large capacitance variation and is difficult to use.

【0010】本発明の目的は、温度特性に優れかつ所望
の静電容量値の静電容量結合部分を有する誘電体フィル
タを設計しやすい構成で得ることである。
It is an object of the present invention to obtain a dielectric filter having an excellent temperature characteristic and having a capacitance coupling portion having a desired capacitance value, which can be easily designed.

【0011】[0011]

【課題を解決するための手段】本発明は静電容量結合部
分を有する誘電体フィルタにおいて、誘電体板にコンデ
ンサ電極を形成してなる結合基板とこの結合基板とは別
個に形成されたコンデンサとを備え、必要静電容量を前
記結合基板で得られる静電容量と前記コンデンサで得ら
れる静電容量とで得ることを特徴としている。
According to the present invention, in a dielectric filter having a capacitance coupling portion, a coupling substrate formed by forming a capacitor electrode on a dielectric plate and a capacitor formed separately from the coupling substrate are provided. And the required capacitance is obtained by the capacitance obtained by the coupling substrate and the capacitance obtained by the capacitor.

【0012】[0012]

【作用】誘電体板にコンデンサ電極を形成してなる結合
基板とこの結合基板とは別個に形成されたコンデンサを
組み合わせたので温度特性が優れかつ所望の静電容量値
の静電容量結合部分を容易に得ることができる。
[Function] Since the combination substrate formed by forming the capacitor electrode on the dielectric plate and the capacitor formed separately from the combination substrate are combined, the capacitance coupling portion having excellent temperature characteristics and a desired capacitance value can be formed. Can be easily obtained.

【0013】[0013]

【実施例】本発明の一実施例誘電体フィルタの構造を図
1に示す斜視図に基づいて説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The structure of a dielectric filter according to an embodiment of the present invention will be described with reference to the perspective view shown in FIG.

【0014】図1において20は本実施例構造を適用し
た3段のバンドパスフィルタとして機能する誘電体フィ
ルタであり、図5の従来例と対応する部分には同一の符
号を付している。このフィルタ20は3つの誘電体同軸
共振器2を並列配置するとともに、前記共振器2の開放
側端面2b側の前方に結合基板3を配設する。前記各誘
電体同軸共振器2は、角柱状の誘電体ブロック2aの軸
芯に共振器孔4を形成し、前記貫通口内に内導電膜2c
を被覆形成すると共に、前記誘電体ブロック2aの開放
側端面2bを除く外表面に外導電膜2dを形成して構成
されている。
In FIG. 1, reference numeral 20 denotes a dielectric filter that functions as a three-stage bandpass filter to which the structure of this embodiment is applied, and the portions corresponding to those of the conventional example of FIG. In this filter 20, three dielectric coaxial resonators 2 are arranged in parallel, and a coupling substrate 3 is arranged in front of the resonator 2 on the open end face 2b side. In each of the dielectric coaxial resonators 2, a resonator hole 4 is formed in the axis of a prismatic dielectric block 2a, and an inner conductive film 2c is formed in the through hole.
And the outer conductive film 2d is formed on the outer surface of the dielectric block 2a except the open end surface 2b.

【0015】また前記各誘電体ブロック2aの共振器孔
4内には前記内導電膜2cに接続される筒状の結合端子
5が圧入されており、前記結合端子5の先端は外方に突
き出している。
A cylindrical coupling terminal 5 connected to the inner conductive film 2c is press-fitted into the resonator hole 4 of each dielectric block 2a, and the tip of the coupling terminal 5 projects outward. ing.

【0016】前記結合基板3は温度特性の良好な誘電体
セラミック材料からなる短冊状のもので、この表面3a
にはこれの長手方向に伸びるくし形のコンデンサ電極
7、8、9がパタ−ン形成されており、前記各コンデン
サ電極7、8、9には前記同軸共振器2の結合端子5の
先端が半田付け接続されている。
The bonded substrate 3 is in the form of a strip made of a dielectric ceramic material having good temperature characteristics, and has a surface 3a.
Is formed with comb-shaped capacitor electrodes 7, 8 and 9 extending in the longitudinal direction thereof. The tip of the coupling terminal 5 of the coaxial resonator 2 is formed on each of the capacitor electrodes 7, 8 and 9. Soldered and connected.

【0017】この結合基板3の電極7にチップコンデン
サ11の一方の電極を半田付け接続し、電極8にチップ
コンデンサ11の他方の電極を半田付け接続し、さらに
電極8にチップコンデンサ12の一方の電極を半田付け
接続し、電極9にチップコンデンサ12の他方の電極を
半田付け接続する。
One electrode of the chip capacitor 11 is soldered to the electrode 7 of the coupling substrate 3, the other electrode of the chip capacitor 11 is soldered to the electrode 8, and one electrode of the chip capacitor 12 is connected to the electrode 8. The electrode is soldered and connected, and the other electrode of the chip capacitor 12 is soldered and connected to the electrode 9.

【0018】そして前記結合基板3の裏面3bには前記
結合基板3を挟んで前記コンデンサ電極7、9と対向す
るコンデンサ電極6、10をパタ−ン形成し、もし必要
な場合は電極6〜10をトリミングするという構造とな
っている。以上の構造とすることにより容量設計の自由
度を増すようにしてある。
On the back surface 3b of the combined substrate 3, capacitor electrodes 6 and 10 that face the capacitor electrodes 7 and 9 with the combined substrate 3 in between are formed by patterning. If necessary, the electrodes 6 to 10 are formed. It has a structure of trimming. With the above structure, the degree of freedom in capacitance design is increased.

【0019】前記各コンデンサ電極6、10には入、出
力端子13、14の一端部が半田付け接続されるという
構造になっており、出力端子13、14の他端部が突出
するように図示しない金属ケ−スに収納して構成されて
いる。このような構造により3段構成のバンドパスフィ
ルタを構成する。
The capacitor electrodes 6 and 10 have a structure in which one end of each of the input and output terminals 13 and 14 is connected by soldering, and the other ends of the output terminals 13 and 14 are shown to project. It is configured to be stored in a metal case that does not. With such a structure, a bandpass filter having a three-stage structure is formed.

【0020】この構造の等価回路を図4に示す。ここで
静電容量C1は電極6、7およびその間に挟まれた結合
基板3部分で得る。静電容量C2は、チップコンデンサ
11で得られる静電容量C5と、電極7、8およびその
間に挟まれた結合基板3部分で得られる静電容量C2´
で得る。静電容量C3は、チップコンデンサ12で得ら
れる静電容量C6と、電極8、9およびその間に挟まれ
た結合基板3部分で得られる静電容量C3´で得る。静
電容量C4は電極9、10およびその間に挟まれた結合
基板3部分で得る。
An equivalent circuit of this structure is shown in FIG. Here, the capacitance C1 is obtained by the electrodes 6 and 7 and the portion of the combined substrate 3 sandwiched therebetween. The electrostatic capacitance C2 is obtained by the chip capacitor 11 and the electrostatic capacitance C2 ′ obtained by the electrodes 7, 8 and the portion of the combined substrate 3 sandwiched therebetween.
Get at. The electrostatic capacitance C3 is obtained by the electrostatic capacitance C6 obtained by the chip capacitor 12 and the electrostatic capacitance C3 'obtained by the electrodes 8 and 9 and the portion of the combined substrate 3 sandwiched therebetween. The capacitance C4 is obtained by the electrodes 9, 10 and the part of the bonded substrate 3 sandwiched therebetween.

【0021】そしてこれらの電極6〜10を必要により
トリミングする事によりその静電容量を調整する事がで
き最終的にチップコンデンサのバラツキを吸収して所望
の静電容量を得る事ができる。従ってチップコンデンサ
のバラツキが大きくても使用可能となり容量ひいてはフ
ィルタを設計する時の自由度が大きくなる。
Then, by trimming these electrodes 6 to 10 as necessary, the capacitance can be adjusted, and finally the variation in the chip capacitor can be absorbed to obtain the desired capacitance. Therefore, even if there is a large variation in the chip capacitor, the chip capacitor can be used, and the degree of freedom in designing the capacitance and thus the filter is increased.

【0022】なお電極のトリミングはチップコンデンサ
を実装するまえにその静電容量を測定しておき、それに
あわせて行っても良い。
The electrodes may be trimmed by measuring the capacitance of the chip capacitor before mounting it and mounting it accordingly.

【0023】[0023]

【発明の効果】本発明によれば、温度特性の良好な誘電
体板にトリミングによりその寸法を微調整できるコンデ
ンサ電極を形成してなる結合基板と、この結合基板とは
別個に形成されたコンデンサを組み合わせることによ
り、それぞれの利点を有効に活用でき、したがって温度
特性が優れかつ所望の静電容量値の静電容量結合部分を
持つ誘電体フィルタを容易に得ることができる。
According to the present invention, a coupling substrate formed by forming a capacitor electrode whose dimensions can be finely adjusted by trimming on a dielectric plate having good temperature characteristics, and a capacitor formed separately from this coupling substrate. By combining the above, respective advantages can be effectively utilized, and therefore, a dielectric filter having excellent temperature characteristics and having a capacitance coupling portion having a desired capacitance value can be easily obtained.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例誘電体フィルタの斜視図であ
る。
FIG. 1 is a perspective view of a dielectric filter according to an embodiment of the present invention.

【図2】本発明の一実施例誘電体フィルタで用いる結合
基板の表面の電極構造図である。
FIG. 2 is an electrode structure diagram of a surface of a coupling substrate used in a dielectric filter according to an embodiment of the present invention.

【図3】本発明の一実施例誘電体フィルタで用いる結合
基板の裏面の電極構造図である。
FIG. 3 is an electrode structure diagram of a back surface of a combined substrate used in a dielectric filter according to an embodiment of the present invention.

【図4】本発明の一実施例誘電体フィルタの等価回路図
である。
FIG. 4 is an equivalent circuit diagram of a dielectric filter according to an embodiment of the present invention.

【図5】従来の誘電体フィルタの斜視図である。FIG. 5 is a perspective view of a conventional dielectric filter.

【図6】従来の誘電体フィルタの等価回路図である。FIG. 6 is an equivalent circuit diagram of a conventional dielectric filter.

【符号の説明】[Explanation of symbols]

20 誘電体フィルタ 2 誘電体同軸共振器 3 結合基板 5 結合端子 6〜10 コンデンサ電極 11、12 チップコンデンサ 20 Dielectric Filter 2 Dielectric Coaxial Resonator 3 Coupling Substrate 5 Coupling Terminals 6 to 10 Capacitor Electrode 11 and 12 Chip Capacitor

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】静電容量結合部分を有する誘電体フィルタ
において、誘電体板にコンデンサ電極を形成してなる結
合基板とこの結合基板とは別個に形成されたコンデンサ
とを備え、必要静電容量を前記結合基板で得られる静電
容量と前記コンデンサで得られる静電容量とで得ること
を特徴とする誘電体フィルタ。
1. A dielectric filter having a capacitance coupling portion, comprising: a coupling substrate formed by forming a capacitor electrode on a dielectric plate; and a capacitor formed separately from the coupling substrate, and a required capacitance. Is obtained by the electrostatic capacitance obtained by the coupling substrate and the electrostatic capacitance obtained by the capacitor.
JP11253093A 1993-05-14 1993-05-14 Dielectric filter Pending JPH06326503A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11253093A JPH06326503A (en) 1993-05-14 1993-05-14 Dielectric filter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11253093A JPH06326503A (en) 1993-05-14 1993-05-14 Dielectric filter

Publications (1)

Publication Number Publication Date
JPH06326503A true JPH06326503A (en) 1994-11-25

Family

ID=14588955

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11253093A Pending JPH06326503A (en) 1993-05-14 1993-05-14 Dielectric filter

Country Status (1)

Country Link
JP (1) JPH06326503A (en)

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