JPH06326367A - Infrared ray detector and manufacture thereof - Google Patents
Infrared ray detector and manufacture thereofInfo
- Publication number
- JPH06326367A JPH06326367A JP5111511A JP11151193A JPH06326367A JP H06326367 A JPH06326367 A JP H06326367A JP 5111511 A JP5111511 A JP 5111511A JP 11151193 A JP11151193 A JP 11151193A JP H06326367 A JPH06326367 A JP H06326367A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- base electrode
- film
- infrared detector
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 25
- 239000002952 polymeric resin Substances 0.000 claims abstract description 13
- 229920003002 synthetic resin Polymers 0.000 claims abstract description 13
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 description 11
- 239000010936 titanium Substances 0.000 description 11
- 239000004642 Polyimide Substances 0.000 description 8
- 229920001721 polyimide Polymers 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 238000007740 vapor deposition Methods 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000003980 solgel method Methods 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Landscapes
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、赤外線検知器及びその
製造方法に関するものである。従来の赤外線検知器は低
温の環境でなければ連続撮像を行うことができない。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an infrared detector and its manufacturing method. The conventional infrared detector cannot perform continuous imaging unless the environment is low.
【０００２】以上のような状況から、常温において連続
撮像を行うことが可能な赤外線検知器が要望されてい
る。Under the circumstances as described above, there is a demand for an infrared detector capable of performing continuous imaging at room temperature.
【０００３】[0003]
【従来の技術】量子型センサ材料を用いる従来の赤外線
検知器は77°Ｋに冷却して用いなければならないので、
冷却装置が大型になり、冷却できない場合には連続して
撮像を行えないという問題点があるが、焦電効果を利用
する赤外線検知器は室内温度で撮像できるので赤外線検
知器を動作させるシステムの小型化が可能である。2. Description of the Related Art Since a conventional infrared detector using a quantum type sensor material must be cooled to 77 ° K and used,
Although there is a problem that the cooling device becomes large and it is not possible to continuously capture images if it cannot be cooled, but an infrared detector that uses the pyroelectric effect can capture images at room temperature, so the system that operates the infrared detector Can be miniaturized.
【０００４】従来の焦電効果を利用する赤外線検知器に
ついて図７により詳細に説明する。図７は従来の赤外線
検知器を示す側断面図である。従来の赤外線検知器は図
７に示すように、ｐ型ウエルにｐ+ 及びｎ+ のトレンチ
を設けたＣＭＯＳのｎ型基板41の表面に絶縁膜42を介し
てアルミニウム電極（以下、Al電極と略称する）47を形
成し、ゲートレジスタ、検出領域、センサトランジス
タ、スイッチングトランジスタを各領域に形成したもの
である。An infrared detector utilizing the conventional pyroelectric effect will be described in detail with reference to FIG. FIG. 7 is a side sectional view showing a conventional infrared detector. As shown in FIG. 7, the conventional infrared detector has an aluminum electrode (hereinafter referred to as an Al electrode) via an insulating film 42 on the surface of an n-type substrate 41 of a CMOS in which p + and n + trenches are provided in a p-type well. (Abbreviated) 47 is formed, and a gate register, a detection region, a sensor transistor, and a switching transistor are formed in each region.
【０００５】この検出領域においては上記の絶縁膜42の
表面に酸化膜46を介してAl電極47を形成しており、この
Al電極47の表面に白金電極48、焦電膜51、赤外線吸収電
極52を積層して形成している。In this detection area, an Al electrode 47 is formed on the surface of the insulating film 42 through an oxide film 46.
A platinum electrode 48, a pyroelectric film 51, and an infrared absorption electrode 52 are laminated on the surface of the Al electrode 47.
【０００６】[0006]
【発明が解決しようとする課題】以上説明した従来の赤
外線検知器においては検出領域の焦電材料と駆動回路と
が密着した一体構造になっており、この構造では比熱が
大きくなるため検出領域で受けた熱が周囲に洩れるよう
になり、感度が低下するという問題点があった。In the conventional infrared detector described above, the pyroelectric material in the detection region and the drive circuit are in close contact with each other and have an integral structure. There is a problem that the heat received is leaked to the surroundings and the sensitivity is lowered.
【０００７】本発明は以上のような状況から、焦点電極
で捕捉した熱を周囲に洩らさず、高い効率で赤外線を検
知することが可能となる赤外線検知器及びその製造方法
の提供を目的としたものである。Under the circumstances as described above, the present invention aims to provide an infrared detector capable of detecting infrared rays with high efficiency without leaking the heat captured by the focus electrode to the surroundings, and a method for manufacturing the infrared detector. It is what
【０００８】[0008]
【課題を解決するための手段】本発明の赤外線検知器
は、基板の表面に駆動回路を形成し、絶縁膜を介してベ
ース電極を設け、このベース電極の表面に白金電極、焦
電膜、赤外線吸収電極を積層して形成する赤外線検知器
において、この基板の表面に形成した駆動回路基板の表
面の絶縁膜と、このベース電極との間に空間を設けるよ
うに構成する。In the infrared detector of the present invention, a drive circuit is formed on the surface of a substrate, a base electrode is provided via an insulating film, and a platinum electrode, a pyroelectric film, In an infrared detector formed by stacking infrared absorbing electrodes, a space is provided between the insulating film on the surface of the drive circuit board formed on the surface of the substrate and the base electrode.
【０００９】本発明の赤外線検知器の製造方法は、駆動
回路基板の表面に絶縁膜を形成し、この絶縁膜とこのベ
ース電極との間隔に相当し、後工程において除去する犠
牲層を形成する工程と、この犠牲層とこの絶縁膜の表面
に延在するベース電極を形成する工程と、この犠牲層を
除去し、このベース電極の表面に電極を積層して形成す
る工程と、この犠牲層を除去する工程とを含むように構
成する。In the method for manufacturing an infrared detector according to the present invention, an insulating film is formed on the surface of the drive circuit board, and a sacrificial layer corresponding to the distance between the insulating film and the base electrode is formed in a later step. A step of forming a base electrode extending on the surface of the sacrificial layer and the insulating film, a step of removing the sacrificial layer and laminating an electrode on the surface of the base electrode, and a step of forming the sacrificial layer. And a step of removing.
【００１０】[0010]
【作用】即ち本発明においては、基板の表面に駆動回路
を形成し、絶縁膜を介してベース電極を設け、このベー
ス電極の表面に白金電極、焦電膜、赤外線吸収電極を積
層して形成する赤外線検知器において、この基板の表面
に形成した駆動回路基板の表面のこの絶縁膜と、このベ
ース電極との間に空間を設けるので、赤外線吸収電極に
赤外線が入射し、焦電膜、白金電極に伝達された熱がベ
ース電極に到達しても、その下部に空間が形成されてい
るので、駆動回路基板に熱が洩れにくくなり、高い効率
で赤外線を検知することができ、赤外線検知器の感度を
向上させることが可能となる。In the present invention, the drive circuit is formed on the surface of the substrate, the base electrode is provided through the insulating film, and the platinum electrode, the pyroelectric film, and the infrared absorbing electrode are laminated on the surface of the base electrode. In the infrared detector, a space is provided between the base electrode and this insulating film on the surface of the drive circuit board formed on the surface of this substrate, so that infrared rays are incident on the infrared absorbing electrode and the pyroelectric film, platinum Even if the heat transferred to the electrode reaches the base electrode, a space is formed under the base electrode, so the heat does not easily leak to the drive circuit board, and infrared rays can be detected with high efficiency. It is possible to improve the sensitivity of.
【００１１】[0011]
【実施例】以下図１により本発明の第１の実施例の赤外
線検知器について、図２〜図６により赤外線検知器の製
造方法について詳細に説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An infrared detector according to a first embodiment of the present invention will be described below with reference to FIG. 1, and a method for manufacturing the infrared detector will be described in detail with reference to FIGS.
【００１２】図１は本発明による第１の実施例の赤外線
検知器を示す図、図２〜図４は本発明による第１の実施
例の赤外線検知器の製造方法を工程順に示す側断面図、
図５〜図６は本発明による第２の実施例の赤外線検知器
の製造方法を工程順に示す側断面図である。FIG. 1 is a view showing an infrared detector according to a first embodiment of the present invention, and FIGS. 2 to 4 are side sectional views showing a method of manufacturing the infrared detector according to the first embodiment of the present invention in the order of steps. ,
5 to 6 are side sectional views showing a method of manufacturing an infrared detector according to the second embodiment of the present invention in the order of steps.
【００１３】本発明による第１の実施例の製造方法によ
り赤外線検知器を製造するには、まず図２(a) に示すよ
うに駆動回路基板１の表面に膜厚 5,000Åのシリコン窒
化膜からなる絶縁膜２をＣＶＤ法により形成し、次工程
において形成するベース電極の支柱のベースになる膜厚
7,000Åのチタン(Ti)或いはモリブデン(Mo)からなるベ
ースカバー金属３を蒸着により形成して、図示の形状に
パターニングする。In order to manufacture an infrared detector by the manufacturing method of the first embodiment according to the present invention, first, as shown in FIG. 2 (a), the surface of the driving circuit board 1 is made of a silicon nitride film having a film thickness of 5,000Å. The insulating film 2 is formed by the CVD method, and becomes the base of the pillar of the base electrode formed in the next step.
A base cover metal 3 made of 7,000 Å titanium (Ti) or molybdenum (Mo) is formed by vapor deposition and patterned into the shape shown.
【００１４】絶縁膜２の材料としてはこの他に、ＢＰＳ
Ｇ、ノンドープド・ポリシリコンを用いることも可能で
ある。つぎに図２(b) に示すように、このベースカバー
金属３の表面に、ポリイミド(PL-1000) からなる直径５
μm 、高さ10μm の４本の高分子樹脂４をリソグラフィ
ー技術を用いて形成する。In addition to the above materials, BPS is used as the material of the insulating film 2.
It is also possible to use G, non-doped polysilicon. Next, as shown in Fig. 2 (b), a diameter 5 made of polyimide (PL-1000) is formed on the surface of the base cover metal 3.
Four polymer resins 4 having a size of μm and a height of 10 μm are formed by using a lithography technique.
【００１５】ついでこのポリイミドの柱の領域以外の領
域をポジレジストからなるパターンカバーで被覆し、図
２(c)に示すようにこのポリイミドの柱の表面に膜厚 1.
5μmのチタン(Ti)或いはモリブデン(Mo)を被着すると、
このポリイミドの柱の側面には40％の厚さ 0.6μm の金
属膜５が形成される。この金属膜５の形成後に、上記の
ポジレジストからなるパターンカバーを除去すると同時
にこのポジレジストの表面に付着した金属膜５をリフト
オフにより除去する。Then, a region other than the region of the polyimide pillar is covered with a pattern cover made of a positive resist, and a film thickness of 1. is formed on the surface of the polyimide pillar as shown in FIG. 2 (c).
When titanium (Ti) or molybdenum (Mo) of 5 μm is deposited,
A metal film 5 having a thickness of 40% and a thickness of 0.6 μm is formed on the side surface of the polyimide pillar. After forming the metal film 5, the pattern cover made of the positive resist is removed, and at the same time, the metal film 5 attached to the surface of the positive resist is removed by lift-off.
【００１６】ここで図２(d) に示すように、上記の金属
膜５で被覆したポリイミドの柱の高さと同じ、後工程に
おいて除去する犠牲層となる高分子樹脂６を形成し、図
示する領域のみにポリイミドが残存するようにパターニ
ングして硬化させる。Here, as shown in FIG. 2 (d), a polymer resin 6 which is to be a sacrifice layer to be removed in a subsequent step and has the same height as the pillar of the polyimide coated with the metal film 5 is formed and illustrated. The polyimide is patterned and cured so that the polyimide remains only in the region.
【００１７】そしてこの絶縁膜２を貫通するコンタクト
ホールをこの駆動回路基板１に形成した後、この高分子
樹脂６及び絶縁膜２の表面に延在する膜厚１μm のチタ
ン(Ti)からなるベース電極７を蒸着或いはスパッタによ
り形成し、リソグラフィー技術により図示の形状にパタ
ーニングする。ベース電極の材料としてはチタンの他
に、モリブデン(Mo)、ニッケル(Ni)、アルミニウム(Al)
を用いることも可能である。After forming a contact hole penetrating the insulating film 2 in the driving circuit board 1, a base made of titanium (Ti) having a film thickness of 1 μm extending on the surface of the polymer resin 6 and the insulating film 2. The electrode 7 is formed by vapor deposition or sputtering, and is patterned into the shape shown by a lithography technique. Besides titanium, molybdenum (Mo), nickel (Ni), aluminum (Al) can be used as the base electrode material.
It is also possible to use.
【００１８】ついでポジレジスト膜をベース電極７の表
面に合わせて厚膜形成して平坦化し、膜厚 7,000Åの白
金層をリソグラフィー技術により形成してパターニング
した後、リフトオフして図３(a) に示すように白金電極
８を形成する。Then, a positive resist film is formed on the surface of the base electrode 7 in a thick film to be flattened, a platinum layer having a film thickness of 7,000 Å is formed by the lithography technique and patterned, and then lifted off to obtain the structure shown in FIG. 3 (a). A platinum electrode 8 is formed as shown in FIG.
【００１９】ついで図３(b) に示すように高分子樹脂9
を白金電極8の表面に合わせて厚膜形成して平坦化し、
図３(c)に示すように、膜厚0.5〜2.0μmのＰＺＴ、PbTi
Ｏ3、ＳＢＮ、LiNbＯ3 などからなる焦電材料膜10をゾ
ル・ゲル法或いは高周波スパッタ法により全面に形成す
る。Then, as shown in FIG. 3 (b), the polymer resin 9
Is formed on the surface of the platinum electrode 8 to form a thick film and flattened,
As shown in FIG. 3C, PZT and PbTi with a film thickness of 0.5 to 2.0 μm
A pyroelectric material film 10 made of O 3 , SBN, LiNbO 3 or the like is formed on the entire surface by a sol-gel method or a high frequency sputtering method.
【００２０】ついで図４(a) に示すように、焦電材料膜
10をイオンミリングにより所望の画素パターンの形状に
パターニングして焦電膜11を形成し、更に図４(b) に示
すようにニッケル・クローム(NiCr)をこの焦電膜11の表
面に蒸着して膜厚１μm の赤外線吸収電極12を形成す
る。Next, as shown in FIG. 4 (a), a pyroelectric material film
Pyroelectric film 11 is formed by patterning 10 into a desired pixel pattern shape by ion milling, and nickel chrome (NiCr) is vapor-deposited on the surface of this pyroelectric film 11 as shown in FIG. 4 (b). As a result, the infrared absorbing electrode 12 having a film thickness of 1 μm is formed.
【００２１】最後に酸素プラズマやエッチング液によ
り、図４(c) に示すように、ベース電極７の下の高分子
樹脂６と、ベース電極７の上の高分子樹脂９とを除去
し、金属膜５で被覆された高分子樹脂４の柱で支持され
たベース電極７の下に空洞を設けた後、500 〜600 ℃で
熱処理を行って焦電特性を向上させる。Finally, as shown in FIG. 4 (c), the polymer resin 6 under the base electrode 7 and the polymer resin 9 on the base electrode 7 are removed by oxygen plasma or an etching solution to remove the metal. After forming a cavity under the base electrode 7 supported by the pillars of the polymer resin 4 covered with the film 5, heat treatment is performed at 500 to 600 ° C. to improve the pyroelectric property.
【００２２】このようにして製造した赤外線検知器は、
図１に示すように駆動回路基板１の表面に形成した絶縁
膜２とベース電極７の間に、ベースカバー金属３と金属
膜５で被覆された高分子樹脂４によって形成された空間
が設けられており、ベース電極７の表面には白金電極
８、焦電膜11、赤外線吸収電極12が積層して形成されて
いるので、赤外線吸収電極12に入射した赤外線の熱を駆
動回路基板１に洩らさずに、効率よく赤外線を検知する
ことが可能となる。The infrared detector manufactured in this way is
As shown in FIG. 1, a space formed by the base cover metal 3 and the polymer resin 4 covered with the metal film 5 is provided between the insulating film 2 formed on the surface of the drive circuit board 1 and the base electrode 7. Since the platinum electrode 8, the pyroelectric film 11, and the infrared absorption electrode 12 are laminated on the surface of the base electrode 7, the infrared heat entering the infrared absorption electrode 12 leaks to the drive circuit board 1. It is possible to detect infrared rays efficiently without touching.
【００２３】本発明による第２の実施例の製造方法によ
り赤外線検知器を製造するには、まず図５(a) に示すよ
うに駆動回路基板21の表面に膜厚 5,000Åのシリコン窒
化膜からなる絶縁膜22をＣＶＤ法により形成し、つぎに
燐の濃度が重量比で８％の膜厚１〜3μmのＰＳＧ膜を絶
縁膜22の表面に形成し、図５(b) に示すように後工程に
おいて形成する空洞に相当する犠牲層となるＰＳＧ膜23
をリソグラフィー技術により形成し、上面に傾斜を持た
せて角部を丸めるために1,000 ℃のリフロー処理を施
す。In order to manufacture an infrared detector by the manufacturing method of the second embodiment according to the present invention, first, as shown in FIG. 5 (a), a surface of the drive circuit board 21 is made of a silicon nitride film having a film thickness of 5,000Å. Is formed by a CVD method, and then a PSG film having a phosphorus concentration of 8% by weight and a thickness of 1 to 3 μm is formed on the surface of the insulating film 22, and as shown in FIG. 5 (b). PSG film 23 serving as a sacrificial layer corresponding to a cavity formed in a later step 23
Is formed by a lithography technique, and a reflow process at 1,000 ° C. is performed to round the corners with a slope on the top surface.
【００２４】ついで図５(c) に示すようにこの絶縁膜22
とＰＳＧ膜23の表面に延在するドープド・ポリシリコン
からなる膜厚１μm のベース電極27をＣＶＤ法により形
成する。ベース電極27の材料としては、チタン(Ti)やモ
リブデン(Mo)などの高融点金属を用いることも可能であ
る。Then, as shown in FIG. 5 (c), this insulating film 22
A base electrode 27 made of doped polysilicon and having a thickness of 1 μm is formed on the surface of the PSG film 23 by the CVD method. As a material of the base electrode 27, a refractory metal such as titanium (Ti) or molybdenum (Mo) can be used.
【００２５】つぎに弗酸と弗化アンモニウムの混合液の
エッチングにより図５(d) に示すようにベース電極27の
下のＰＳＧ膜23を除去して空洞26を形成する。ここで図
６(a) に示すようにこのベース電極27の表面に膜厚 0.5
〜２.0μm のＰＺＴ、PbTiＯ3 、ＳＢＮ、LiNbＯ3 、Pb
5Ge3Ｏ11、BaTiＯ3 、ＰＬＺＴなどからなる焦電材料膜
30をゾル・ゲル法或いは高周波スパッタ法或いはＭＯＣ
ＶＤ法により堆積する。Next, the PSG film 23 under the base electrode 27 is removed by etching with a mixed solution of hydrofluoric acid and ammonium fluoride to form a cavity 26, as shown in FIG. 5 (d). Here, as shown in FIG. 6A, a film thickness of 0.5 is formed on the surface of the base electrode 27.
~ 2.0μm PZT, PbTiO 3 , SBN, LiNbO 3 , Pb
Pyroelectric material film made of 5 Ge 3 O 11 , BaTiO 3 , PLZT, etc.
30 is sol-gel method or high frequency sputtering method or MOC
It is deposited by the VD method.
【００２６】その後焦電材料膜30をイオンミリングによ
り画素パターンにパターニングして図６(b) に示すよう
に焦電膜31を形成した後、 500〜600 ℃で数十分間の熱
処理を行って焦電特性を向上させる。After that, the pyroelectric material film 30 is patterned into a pixel pattern by ion milling to form a pyroelectric film 31 as shown in FIG. 6 (b), and then heat treatment is performed at 500 to 600 ° C. for several tens of minutes. Improve the pyroelectric properties.
【００２７】最後に図６(c) に示すように、焦電膜31の
表面ニッケル・クローム(NiCr)からなる上部電極32を蒸
着により形成し、プラチナ(Pt)やチタン(Ti)からなる下
地電極33を蒸着により形成する。この両電極を同時に形
成する場合には、膜厚１μmのニッケル・クローム(NiC
r)を蒸着やスパッタにより被着し、図示の形状にパター
ニングする。Finally, as shown in FIG. 6 (c), an upper electrode 32 made of nickel chromium (NiCr) on the surface of the pyroelectric film 31 is formed by vapor deposition, and a base made of platinum (Pt) or titanium (Ti) is formed. The electrode 33 is formed by vapor deposition. When both electrodes are formed at the same time, nickel chrome (NiC
r) is deposited by vapor deposition or sputtering and patterned into the shape shown.
【００２８】第１及び第２の製造方法において駆動回路
基板１及び21の表面に形成する絶縁膜２及び22の材料と
しては、上記のシリコン窒化膜の他に、ＢＰＳＧやノン
ドープのポリシリコンを用いることも可能である。In addition to the above silicon nitride film, BPSG or non-doped polysilicon is used as the material for the insulating films 2 and 22 formed on the surfaces of the drive circuit boards 1 and 21 in the first and second manufacturing methods. It is also possible.
【００２９】このような製造工程によりベース電極７或
いはベース電極27の下部に空間を設けるので、赤外線検
知領域の熱的な絶縁を充分にとることができるので、高
感度の赤外線検知器を製造することが可能となる。Since a space is provided below the base electrode 7 or the base electrode 27 by such a manufacturing process, it is possible to sufficiently insulate the infrared detection region thermally, and thus a highly sensitive infrared detector is manufactured. It becomes possible.
【００３０】[0030]
【発明の効果】以上の説明から明らかなように、本発明
によれば赤外線検知器の駆動回路基板とベース電極の間
に空間を設ける構造にすることにより、高感度の赤外線
検知器を製造することが可能となる利点があり、著しい
性能向上の効果が期待できる赤外線検知器及びその製造
方法の提供が可能である。As is clear from the above description, according to the present invention, a highly sensitive infrared detector is manufactured by providing a space between the drive circuit board of the infrared detector and the base electrode. It is possible to provide an infrared detector and a method for manufacturing the same, which has the advantage of being capable of achieving the above-mentioned advantages.
【図１】 本発明による第１の実施例の赤外線検知器を
示す図FIG. 1 is a diagram showing an infrared detector according to a first embodiment of the present invention.
【図２】 本発明による第１の実施例の赤外線検知器の
製造方法を工程順に示す側断面図(1)FIG. 2 is a side sectional view (1) showing the method of manufacturing the infrared detector of the first embodiment according to the present invention in the order of steps.
【図３】 本発明による第１の実施例の赤外線検知器の
製造方法を工程順に示す側断面図(2)FIG. 3 is a side sectional view (2) showing the method of manufacturing the infrared detector of the first embodiment according to the present invention in the order of steps.
【図４】 本発明による第１の実施例の赤外線検知器の
製造方法を工程順に示す側断面図(3)FIG. 4 is a side sectional view (3) showing the method of manufacturing the infrared detector according to the first embodiment of the present invention in the order of steps.
【図５】 本発明による第２の実施例の赤外線検知器の
製造方法を工程順に示す側断面図(1)FIG. 5 is a side sectional view (1) showing a method of manufacturing an infrared detector according to a second embodiment of the present invention in the order of steps.
【図６】 本発明による第２の実施例の赤外線検知器の
製造方法を工程順に示す側断面図(2)FIG. 6 is a sectional side view showing a method of manufacturing an infrared detector according to a second embodiment of the present invention in the order of steps (2)
【図７】 従来の赤外線検知器を示す側断面図FIG. 7 is a side sectional view showing a conventional infrared detector.
1,21 駆動回路基板 2,22 絶縁膜 ３ ベースカバー電極 ４ 高分子樹脂 ５ 金属膜 ６ 高分子樹脂 7,27 ベース電極 ８ 白金電極 ９ 高分子樹脂 10,30 焦電材料膜 11,31 焦電膜 12 赤外線吸収電極 23 ＰＳＧ膜 26 空洞 32 上部電極 33 下地電極 1,21 Drive circuit board 2,22 Insulation film 3 Base cover electrode 4 Polymer resin 5 Metal film 6 Polymer resin 7,27 Base electrode 8 Platinum electrode 9 Polymer resin 10,30 Pyroelectric material film 11,31 Pyroelectric Film 12 Infrared absorbing electrode 23 PSG film 26 Cavity 32 Upper electrode 33 Base electrode
───────────────────────────────────────────────────── フロントページの続き (72)発明者 川田 諭 神奈川県川崎市中原区上小田中1015番地 富士通株式会社内 ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Satoshi Kawada 1015 Kamiodanaka, Nakahara-ku, Kawasaki-shi, Kanagawa Fujitsu Limited
Claims (3)
を介してベース電極を設け、該ベース電極の表面に白金
電極、焦電膜、赤外線吸収電極を積層して形成する赤外
線検知器において、 駆動回路基板(1,21)の表面の前記絶縁膜(2,22)と、前記
ベース電極(7,27)との間に空間を設けたことを特徴とす
る赤外線検知器。1. An infrared detector in which a drive circuit is formed on the surface of a substrate, a base electrode is provided via an insulating film, and a platinum electrode, a pyroelectric film, and an infrared absorbing electrode are laminated on the surface of the base electrode. In the infrared detector, the space is provided between the insulating film (2, 22) on the surface of the drive circuit board (1, 21) and the base electrode (7, 27).
回路基板(1) の表面の絶縁膜(2) と前記ベース電極(7)
との間の空間に、前記絶縁膜(2) と前記ベース電極(7)
の間隔を保持する金属膜(5) で被覆された高分子樹脂
(4) を具備することを特徴とする赤外線検知器。2. The insulating film (2) on the surface of the drive circuit board (1) of the infrared detector according to claim 1, and the base electrode (7).
In the space between the insulating film (2) and the base electrode (7)
Polymer resin coated with a metal film (5) that maintains the space between
An infrared detector comprising (4).
であって、 駆動回路基板(1,21)の表面に絶縁膜(2,22)を形成し、該
絶縁膜(2,22)と前記ベース電極(7,27)との間隔に相当
し、後工程において除去する犠牲層(6,23)を形成する工
程と、 該犠牲層(6,23)と前記絶縁膜(2,22)の表面に延在するベ
ース電極(7,27)を形成する工程と、 前記犠牲層(6,23)を除去し、前記ベース電極(7,27)の表
面に電極(8,11,12,31,32) を積層して形成する工程と、 前記犠牲層(6,23)を除去する工程と、 を含むことを特徴とする赤外線検知器の製造方法。3. The method for manufacturing an infrared detector according to claim 1, wherein an insulating film (2,22) is formed on a surface of the driving circuit board (1,21), and the insulating film (2,22). And a step of forming a sacrificial layer (6, 23) corresponding to a distance between the base electrode (7, 27) and removed in a later step, the sacrificial layer (6, 23) and the insulating film (2, 22). ) Of the base electrode (7, 27) extending to the surface of, and removing the sacrificial layer (6, 23), the electrode (8, 11, 12) on the surface of the base electrode (7, 27). , 31, 32), and a step of removing the sacrificial layer (6, 23). A method for manufacturing an infrared detector, comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5111511A JPH06326367A (en) | 1993-05-13 | 1993-05-13 | Infrared ray detector and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5111511A JPH06326367A (en) | 1993-05-13 | 1993-05-13 | Infrared ray detector and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06326367A true JPH06326367A (en) | 1994-11-25 |
Family
ID=14563166
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5111511A Withdrawn JPH06326367A (en) | 1993-05-13 | 1993-05-13 | Infrared ray detector and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06326367A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101978246A (en) * | 2008-03-17 | 2011-02-16 | 浜松光子学株式会社 | Photodetector |
-
1993
- 1993-05-13 JP JP5111511A patent/JPH06326367A/en not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101978246A (en) * | 2008-03-17 | 2011-02-16 | 浜松光子学株式会社 | Photodetector |
| US8692348B2 (en) | 2008-03-17 | 2014-04-08 | Hamamatsu Photonics K.K. | Photodetector |
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