JPH06310488A - Anodic formation equipment - Google Patents
Anodic formation equipmentInfo
- Publication number
- JPH06310488A JPH06310488A JP12207793A JP12207793A JPH06310488A JP H06310488 A JPH06310488 A JP H06310488A JP 12207793 A JP12207793 A JP 12207793A JP 12207793 A JP12207793 A JP 12207793A JP H06310488 A JPH06310488 A JP H06310488A
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- Prior art keywords
- wafer
- electrode
- solution
- chemical conversion
- supporting member
- Prior art date
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体基板の処理等に
用いられる陽極化成装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an anodizing apparatus used for processing semiconductor substrates.
【０００２】[0002]
【従来の技術】従来、半導体基板の処理等のため、化成
溶液中に半導体ウエハを浸し、電流を流すことにより、
化成処理を行なう陽極化成装置が用いられている。2. Description of the Related Art Conventionally, for processing semiconductor substrates, etc., a semiconductor wafer is soaked in a chemical conversion solution, and an electric current is passed through it.
An anodizing apparatus that performs a chemical conversion treatment is used.
【０００３】図３は、特開昭６０−９４７３７号等に記
載されている、従来の陽極化成装置の構成を模式的に示
す図であり、同図において、１は化成処理されるウエハ
であり、２は化成溶液、３は化成槽、４、４’は電極で
ある。FIG. 3 is a diagram schematically showing the configuration of a conventional anodizing apparatus described in Japanese Patent Laid-Open No. 60-94737 and the like. In FIG. 3, 1 is a wafer to be anodized. Reference numeral 2 is a chemical conversion solution, 3 is a chemical conversion tank, and 4 and 4'are electrodes.
【０００４】図３に示すように、従来の陽極化成装置で
は、ウエハ１の両面を導電性の化成溶液２で満たす構造
になっていた。As shown in FIG. 3, the conventional anodizing apparatus has a structure in which both surfaces of the wafer 1 are filled with a conductive forming solution 2.
【０００５】[0005]
【発明が解決しようとしている課題】しかしながら、上
記従来例では次のような欠点があった。 （１）化成するウエハの両側に導電性の液があるため、
ウエハのシール部にもれがあると化成電流がリークし、
リーク部の周辺のウエハの化成層の膜厚が他の部分に比
べ薄くなるという問題。 （２）ウエハが化成槽の一部になっているため、化成を
行ったウエハを取り出す場合、化成溶液を抜く必要があ
り、１枚のウエハを処理する時間が長くなるという問
題。However, the above-mentioned conventional example has the following drawbacks. (1) Since there are conductive liquids on both sides of the formed wafer,
If there is a leak in the seal part of the wafer, the formation current will leak,
There is a problem that the film thickness of the chemical conversion layer of the wafer around the leak part becomes thinner than other parts. (2) Since the wafer is part of the chemical conversion tank, it is necessary to drain the chemical conversion solution when taking out the chemically processed wafer, and the time for processing one wafer becomes long.
【０００６】［発明の目的］本発明の目的は、化成溶液
の漏れによるウエハ化成層の変化を防止し、ウエハの取
り付け及び取り出し時に化成溶液を抜かなくてすむ陽極
化成装置を実現することにある。[Object of the Invention] An object of the present invention is to realize an anodizing device which prevents the formation of a wafer forming layer due to leakage of the forming solution and does not need to remove the forming solution when mounting and removing a wafer. .
【０００７】[0007]
【課題を解決するための手段】本発明は、前述した課題
を解決するための手段として、陽極化成されるウエハの
裏面を化成溶液から隔離して、該化成溶液中に支持する
ウエハ支持部材と、前記ウエハと前記ウエハ支持部材と
で構成される前記化成溶液から隔離された空間内に配置
され、前記ウエハ裏面に直接接触する電極と、を有する
ことを特徴とする陽極化成装置を提供するものである。As a means for solving the above problems, the present invention provides a wafer support member for separating the back surface of a wafer to be anodized from a chemical forming solution and supporting the wafer in the chemical forming solution. And an electrode that is disposed in a space separated from the chemical conversion solution that is composed of the wafer and the wafer supporting member and that is in direct contact with the back surface of the wafer. Is.
【０００８】また、前記ウエハと前記ウエハ支持部材と
で構成される前記化成溶液から隔離された空間内が陰圧
に吸引され、該陰圧により前記ウエハを吸引して支持す
ることを特徴とし、また、前記ウエハが吸引される前記
陰圧より小さな圧力を生じる弾性部材により、前記電極
を該ウエハ裏面に押圧して接触させることを特徴とし、
また、前記ウエハ支持部材、及び該ウエハに接触する電
極、及び電極に付随する部分が、前記ウエハに直接接触
する電極表面を除いて、全て前記化成溶液に対して耐性
のある材料で構成されていることを特徴とし、また、前
記ウエハ支持部材は、該ウエハの外周部を押圧して支持
する部材と、該部材を前記ウエハに直接接触する電極に
固定する締め具とからなることを特徴とし、また、前記
ウエハ、及び前記ウエハ支持部材、及び前記ウエハに接
触する電極は、化成槽から取り出し可能に設置されるこ
とを特徴とする陽極化成装置を、その手段とするもので
ある。Further, the space separated from the chemical conversion solution composed of the wafer and the wafer supporting member is sucked by negative pressure, and the negative pressure sucks and supports the wafer, Also, the electrode is pressed against and brought into contact with the back surface of the wafer by an elastic member that generates a pressure smaller than the negative pressure for sucking the wafer.
Further, the wafer supporting member, the electrode in contact with the wafer, and the part associated with the electrode are all made of a material resistant to the chemical conversion solution except for the electrode surface in direct contact with the wafer. Further, the wafer supporting member is composed of a member that presses and supports the outer peripheral portion of the wafer and a fastener that fixes the member to an electrode that directly contacts the wafer. Further, the wafer, the wafer supporting member, and the electrode in contact with the wafer are installed so that they can be taken out from the chemical conversion tank, and the means is an anodizing apparatus.
【０００９】[0009]
【作用】本発明によれば、化成すべきウエハの裏面と、
そこに直接接触する電極とを化成溶液から隔離して、化
成溶液中に支持できるため、化成溶液が電極に達するこ
とを防ぎ、ウエハ化成層の膜厚を安定して均一に形成す
ることが可能となる。According to the present invention, the back surface of the wafer to be formed,
Since the electrode that directly contacts it can be isolated from the chemical conversion solution and supported in the chemical conversion solution, it is possible to prevent the chemical conversion solution from reaching the electrode and form a stable and uniform wafer chemical conversion layer thickness. Becomes
【００１０】また、本発明によれば、化成装置のウエハ
を保持し、電流を供給する部分をウエハが接する電極部
を除き、全て、表面を耐ＨＦ性の物質で形成することに
より、ウエハ、及びウエハ支持部材、及びウエハ接触電
極部を化成溶液中に取り出し可能に設置することがで
き、このため化成溶液を抜くことなしにウエハの取り付
け、取り外しが可能となり、処理時間の短縮ができる。Further, according to the present invention, the wafer of the chemical conversion device is held, and the portion for supplying the current is formed of an HF-resistant material on all surfaces except the electrode portion in contact with the wafer. Further, the wafer supporting member and the wafer contact electrode portion can be removably installed in the chemical forming solution, and therefore, the wafer can be attached and detached without removing the chemical forming solution, and the processing time can be shortened.
【００１１】[0011]
【実施例】図１は、本発明の特徴を最もよく表わす図面
であり、同図に於いて１は化成すべきウエハ、２は化成
溶液であり、例えばＨＦ：Ｈ2 Ｏ＝１：１の比率で混合
されたものである。３は、化成溶液２を蓄えるための槽
であり、例えばテフロンで形成する。４は化成に用いる
Ｐｔ電極、５はウエハ１を支持し、かつ電極７を電気的
にウエハ１裏面に接触させるためのウエハ支持部材であ
る。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a drawing which best represents the features of the present invention. In FIG. 1, 1 is a wafer to be formed and 2 is a forming solution, for example, HF: H 2 O = 1: 1. It is mixed in a ratio. Reference numeral 3 is a tank for storing the chemical conversion solution 2, which is made of, for example, Teflon. Reference numeral 4 is a Pt electrode used for chemical conversion, and 5 is a wafer supporting member for supporting the wafer 1 and electrically contacting the electrode 7 with the back surface of the wafer 1.
【００１２】ウエハ支持部材５は、耐ＨＦ性の物質、例
えばテフロンで形成した本体６を有し、ウエハ支持部材
の本体６と電極７により構成される空間８は、外部の真
空ポンプ（図示せず）により陰圧に吸引され、この力に
よりウエハ１を吸引してを支持している。The wafer supporting member 5 has a main body 6 made of an HF resistant material such as Teflon, and the space 8 formed by the main body 6 of the wafer supporting member and the electrodes 7 is an external vacuum pump (not shown). Negatively), the wafer 1 is sucked and supported by this force.
【００１３】９は化成溶液２が空間８に侵入するのを防
ぎ、かつ空間８内の陰圧を保持するためのシール材であ
る。Reference numeral 9 is a sealing material for preventing the chemical conversion solution 2 from entering the space 8 and for maintaining a negative pressure in the space 8.
【００１４】電極７の表面のうち空間８に面する部分１
０は、耐ＨＦ性の物質例えばテフロンで覆われている。
また１１は、電極７に電流を供給するための導線であ
り、その表面は同様にテフロンなどの耐ＨＦ性の物質で
被膜されており、また、若干の伸縮が可能な構造になっ
ている。このように陰圧になっている空間８の内面を全
て、耐ＨＦ性の物質で被膜することにより、万一、Ｏリ
ング等のシール材９とウエハ１の間から化成溶液が漏れ
入った場合にも電流がもれない構造となっており、か
つ、侵入した化成溶液は、空間８を経て速やかに陰圧に
より排出される。Part 1 of the surface of the electrode 7 facing the space 8
0 is covered with an HF resistant material such as Teflon.
Reference numeral 11 is a conducting wire for supplying a current to the electrode 7, the surface of which is also coated with an HF resistant material such as Teflon, and has a structure capable of slightly expanding and contracting. In the event that the chemical conversion solution leaks from between the sealing material 9 such as an O-ring and the wafer 1 by coating the entire inner surface of the negative pressure space 8 with a HF-resistant substance. The structure is such that no electric current is leaked, and the infiltrated chemical conversion solution is promptly discharged by negative pressure through the space 8.
【００１５】１２は電極７をウエハ１に密着させるため
の弾性部材としてのバネであり、耐ＨＦ性の物質で被膜
され、その反発力は陰圧によりウエハ１が空間８側に吸
引される力よりも弱い力にする必要がある。Reference numeral 12 is a spring as an elastic member for closely contacting the electrode 7 with the wafer 1. The spring 12 is coated with an HF-resistant substance, and its repulsive force is a force for attracting the wafer 1 to the space 8 side by negative pressure. Need to be weaker than.
【００１６】上述のように、電極７を直接ウエハ１の裏
面に直接接触させることにより、化成中に裏面から発生
する引火性のＨ2 などのガスの発生を抑制できる。As described above, by bringing the electrode 7 into direct contact with the back surface of the wafer 1, generation of flammable gas such as H 2 generated from the back surface during chemical formation can be suppressed.
【００１７】また、ウエハに密着する電極部分を除いて
は、全て、テフロンなどの耐ＨＦ性の物質で形成するこ
とにより、ウエハ及びウエハ支持部材及び電極全体を化
成槽３中に出し入れすることが容易にでき、化成を行っ
たウエハを取り出す場合でも化成溶液を抜く必要がなく
なり、１枚のウエハを処理する時間が短かくなる。The wafer, the wafer supporting member, and the entire electrode can be put into and taken out of the chemical conversion tank 3 by forming the electrode, except for the electrode portion that is in close contact with the wafer, with an HF-resistant material such as Teflon. This can be easily done, and even when taking out a wafer that has undergone chemical conversion, it is not necessary to drain the chemical conversion solution, and the time for processing one wafer becomes short.
【００１８】また同時に、ウエハシール部から化成溶液
が浸入した場合でも、電気的にＰｔ電極４と、ウエハ裏
面電極７はテフロンなどの耐ＨＦ性かつ絶縁性の物質に
より分離されているために、電流のリークによるリーク
部周辺のウエハ化成層の膜厚変化を防止でき、均一な厚
さのウエハ化成層が形成可能となる。 〔他の実施例〕図２は、本発明の他の実施例を示す断面
模式図であり、同様に陽極化成槽の内部を示すものであ
る。At the same time, even when the chemical conversion solution enters from the wafer seal portion, the Pt electrode 4 and the wafer back surface electrode 7 are electrically separated by the HF-resistant and insulating substance such as Teflon. It is possible to prevent a change in the film thickness of the wafer chemical conversion layer around the leak portion due to a current leak, and it is possible to form a wafer chemical conversion layer having a uniform thickness. [Other Embodiments] FIG. 2 is a schematic cross-sectional view showing another embodiment of the present invention, similarly showing the inside of the anodizing bath.
【００１９】図２に於いて、１は化成すべきウエハ、２
は化成溶液であり例えばＨＦ：Ｈ2Ｏ：１：１の比率で
混合されたものである。３は化成溶液２を蓄えるための
化成槽であり、例えばテフロンで形成されている。４は
化成に用いるＰｔ電極、５はウエハ１を支持し、かつ電
極７を電気的にウエハに接触させるためのウエハ支持部
材である。ウエハ支持部材５は耐ＨＦ性の物質、例えば
テフロンで形成した本体６と、電極７を支持する部分と
からなり、また７はウエハに電流を供給するための電極
である。１３は、化成溶液２がウエハ支持部材５に侵入
するのを防ぐためのシール材であり、１４は万一、化成
溶液がウエハ支持部材５の内部に侵入した場合にも電極
７に化成溶液が達し、電流がリークすることを防ぐため
のシール材である。In FIG. 2, 1 is a wafer to be formed, and 2 is a wafer.
Is a chemical conversion solution, for example, mixed in a ratio of HF: H 2 O: 1: 1. Reference numeral 3 denotes a chemical conversion tank for storing the chemical conversion solution 2, which is made of, for example, Teflon. Reference numeral 4 is a Pt electrode used for chemical formation, and 5 is a wafer supporting member for supporting the wafer 1 and electrically contacting the electrode 7 with the wafer. The wafer supporting member 5 is composed of a main body 6 made of an HF resistant material such as Teflon, and a portion for supporting the electrode 7, and 7 is an electrode for supplying a current to the wafer. Reference numeral 13 is a sealing material for preventing the chemical conversion solution 2 from entering the wafer supporting member 5, and 14 should the chemical conversion solution be applied to the electrode 7 even if the chemical converting solution enters the wafer supporting member 5. It is a sealing material for preventing the current from reaching and leaking.
【００２０】電極７の表面のうちウエハ１に接する部分
を除く部位１０は全て耐ＨＦ性の物質、例えばテフロン
で構成されている。１１は電極７に電流を供給するため
の導線、１５は電極７と本体６とを密着させ、シール性
を向上させるための締め具としてのねじであり、テフロ
ン等の耐ＨＦ性の物質で形成されている。A portion 10 of the surface of the electrode 7 excluding a portion in contact with the wafer 1 is made of an HF-resistant substance such as Teflon. Reference numeral 11 is a conducting wire for supplying an electric current to the electrode 7, and 15 is a screw as a fastener for adhering the electrode 7 and the main body 6 to each other to improve the sealing property, which is formed of an HF resistant material such as Teflon. Has been done.
【００２１】このような化成装置を作成することによ
り、図１で前述したことと同様の効果が期待できる。By producing such a chemical conversion device, the same effect as described above with reference to FIG. 1 can be expected.
【００２２】[0022]
【発明の効果】以上説明したように、本発明によれば、
化成すべきウエハの裏面とそこに接触する電極とを化成
溶液から隔離して化成溶液中に支持することにより、化
成溶液が電極に達することを妨げ、ウエハ化成層の膜厚
を安定して均一に形成できる効果がある。As described above, according to the present invention,
By separating the back surface of the wafer to be formed and the electrode in contact therewith from the forming solution and supporting it in the forming solution, the forming solution is prevented from reaching the electrode and the film thickness of the formed layer on the wafer is stable and uniform. There is an effect that can be formed.
【００２３】また、ウエハ、及びウエハ支持部材、及び
ウエハに直接電流を供給する電極部が化成溶液中に自由
に出し入れ可能となるため、化成溶液を抜くことなしに
ウエハの取り付け、取り外しが可能となり、処理時間の
短縮、化成溶液の節減ができる効果がある。Further, since the wafer, the wafer supporting member, and the electrode portion for directly supplying an electric current to the wafer can be freely taken in and out of the chemical forming solution, the wafer can be attached and detached without removing the chemical forming solution. In addition, the processing time can be shortened and the chemical conversion solution can be saved.
【図１】本発明を実施した陽極化成装置の断面模式図。FIG. 1 is a schematic cross-sectional view of an anodizing apparatus embodying the present invention.
【図２】本発明を実施した他の陽極化成装置の断面模式
図。FIG. 2 is a schematic cross-sectional view of another anodizing apparatus embodying the present invention.
【図３】従来例の陽極化成装置の断面模式図。FIG. 3 is a schematic sectional view of a conventional anodizing apparatus.
１ 化成すべきウエハ ２ 化成溶液 ３ 化成槽 ４ 電極 ５ ウエハを支持部材 ６ ウエハ支持部材の本体 ７ ウエハに接触する電極 ８ 空間 ９ シール材 １０ 耐化成溶液性を有する被覆材 １１ 耐化成溶液性を有する材質で被覆された導線 １２ 耐化成溶液性を有する材質で被覆されたバネ 1 Wafer to be formed 2 Forming solution 3 Forming tank 4 Electrode 5 Wafer supporting member 6 Wafer supporting member body 7 Electrode in contact with wafer 8 Space 9 Sealing material 10 Coating material having chemical forming solution resistance 11 Chemical forming solution resistance Conductor wire coated with a material 12 Spring coated with a material having chemical solution resistance
Claims (6)
電流を流すことにより、化成処理を行なう陽極化成装置
において、 前記陽極化成されるウエハの裏面を前記化成溶液から隔
離して該化成溶液中に支持するウエハ支持部材と、 前記ウエハと前記ウエハ支持部材とで構成される前記化
成溶液から隔離された空間内に配置され、前記ウエハの
裏面に直接接触する電極と、 を有することを特徴とする陽極化成装置。1. Immersing a wafer to be formed in a forming solution,
In an anodizing apparatus that performs a chemical conversion treatment by passing an electric current, a wafer supporting member that isolates the back surface of the anodized wafer from the chemical forming solution and supports the wafer in the chemical forming solution, and the wafer and the wafer supporting member. And an electrode which is arranged in a space isolated from the chemical conversion solution and which is in direct contact with the back surface of the wafer.
成される前記化成溶液から隔離された空間内が陰圧に吸
引され、該陰圧により前記ウエハを吸引して支持するこ
とを特徴とする請求項１に記載の陽極化成装置。2. A negative pressure is sucked into a space formed by the wafer and the wafer supporting member and isolated from the chemical conversion solution, and the negative pressure sucks and supports the wafer. The anodizing apparatus according to claim 1.
さな圧力を生じる弾性部材により、前記電極を該ウエハ
裏面に押圧して接触させることを特徴とする請求項１に
記載の陽極化成装置。3. The anodizing apparatus according to claim 1, wherein the electrode is pressed against and brought into contact with the back surface of the wafer by an elastic member that generates a pressure smaller than the negative pressure with which the wafer is sucked.
に接触する電極、及び該電極に付随する部分が、前記ウ
エハに直接接触する電極表面を除いて、全て前記化成溶
液に対して耐性のある材料で構成されていることを特徴
とする請求項１に記載の陽極化成装置。4. The wafer supporting member, the electrode in contact with the back surface of the wafer, and the portion associated with the electrode are all resistant to the chemical conversion solution except for the electrode surface in direct contact with the wafer. The anodizing apparatus according to claim 1, which is made of a material.
部を押圧して支持する部材と、該部材を前記ウエハに直
接接触する電極の支持部材に固定する締め具とからなる
ことを特徴とする請求項１に記載の陽極化成装置。5. The wafer supporting member comprises a member for pressing and supporting the outer peripheral portion of the wafer, and a fastener for fixing the member to a supporting member of an electrode which is in direct contact with the wafer. The anodizing apparatus according to claim 1.
及び前記ウエハ裏面に接触する電極は、化成槽から取り
出し可能に設置されることを特徴とする請求項１に記載
の陽極化成装置。6. The wafer and the wafer support member,
The anodizing apparatus according to claim 1, wherein the electrode that contacts the back surface of the wafer is installed so as to be taken out of the anodizing bath.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12207793A JP3201875B2 (en) | 1993-04-27 | 1993-04-27 | Anodizing equipment and method |
| DE69312636T DE69312636T2 (en) | 1992-11-09 | 1993-11-08 | Anodizing apparatus with a carrier device for the substrate to be treated |
| EP93118093A EP0597428B1 (en) | 1992-11-09 | 1993-11-08 | Anodization apparatus with supporting device for substrate to be treated |
| US08/148,341 US5458755A (en) | 1992-11-09 | 1993-11-08 | Anodization apparatus with supporting device for substrate to be treated |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12207793A JP3201875B2 (en) | 1993-04-27 | 1993-04-27 | Anodizing equipment and method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06310488A true JPH06310488A (en) | 1994-11-04 |
| JP3201875B2 JP3201875B2 (en) | 2001-08-27 |
Family
ID=14827089
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12207793A Expired - Lifetime JP3201875B2 (en) | 1992-11-09 | 1993-04-27 | Anodizing equipment and method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3201875B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0926269A2 (en) * | 1997-12-26 | 1999-06-30 | Canon Kabushiki Kaisha | Anodizing apparatus and method and porous substrate |
| US5951833A (en) * | 1996-11-28 | 1999-09-14 | Canon Kabushiki Kaisha | Anodizing apparatus |
| JP2021524668A (en) * | 2018-05-17 | 2021-09-13 | ネックスヴァーフェ・ゲー・エム・ベー・ハーＮｅｘｗａｆｅ Ｇｍｂｈ | Equipment and methods for etching one surface of the semiconductor layer of the work |
-
1993
- 1993-04-27 JP JP12207793A patent/JP3201875B2/en not_active Expired - Lifetime
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5951833A (en) * | 1996-11-28 | 1999-09-14 | Canon Kabushiki Kaisha | Anodizing apparatus |
| US6202655B1 (en) | 1996-11-28 | 2001-03-20 | Canon Kabushiki Kaisha | Anodizing apparatus and apparatus and method associated with the same |
| US6517697B1 (en) | 1996-11-28 | 2003-02-11 | Canon Kabushiki Kaisha | Anodizing method |
| EP0926269A2 (en) * | 1997-12-26 | 1999-06-30 | Canon Kabushiki Kaisha | Anodizing apparatus and method and porous substrate |
| EP0926269A3 (en) * | 1997-12-26 | 2000-05-31 | Canon Kabushiki Kaisha | Anodizing apparatus and method and porous substrate |
| US6258240B1 (en) | 1997-12-26 | 2001-07-10 | Canon Kabushiki Kaisha | Anodizing apparatus and method |
| JP2021524668A (en) * | 2018-05-17 | 2021-09-13 | ネックスヴァーフェ・ゲー・エム・ベー・ハーＮｅｘｗａｆｅ Ｇｍｂｈ | Equipment and methods for etching one surface of the semiconductor layer of the work |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3201875B2 (en) | 2001-08-27 |
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