JPH06310449A - Vapor phase diffusion - Google Patents
Vapor phase diffusionInfo
- Publication number
- JPH06310449A JPH06310449A JP9274393A JP9274393A JPH06310449A JP H06310449 A JPH06310449 A JP H06310449A JP 9274393 A JP9274393 A JP 9274393A JP 9274393 A JP9274393 A JP 9274393A JP H06310449 A JPH06310449 A JP H06310449A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- vapor phase
- contact layer
- ingaasp
- diffusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- Semiconductor Lasers (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明はｐ型コンタクト層を形成
する時の気相拡散方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vapor phase diffusion method for forming a p-type contact layer.
【０００２】[0002]
【従来の技術】従来のｐ型コンタクト層の形成方法は、
石英のアンプル管内に半導体多層膜と、ＺｎＰ2等のＺ
ｎ化合物を入れ、高真空中で封じ、次にアンプル管を高
温の炉内に入れ、ＺｎＰ2をＺｎとＰに分離させ、この
Ｚｎを表面層から結晶内部に拡散させ、高濃度のｐ型コ
ンタクト層を形成した。この方法はアンプル管を封じ切
るため閉管法もしくは封じ切り法と呼ばれる。この方法
の従来例にはジャーナル・オブ・アプライド・フィジッ
クス第６５巻（１９８９年）５５３項（Journalof Appl
ied Physics vol.65(1989)pp.553）等がある。2. Description of the Related Art A conventional method for forming a p-type contact layer is as follows.
A semiconductor multilayer film and ZP such as ZnP 2 in a quartz ampoule tube.
n-compound, sealed in a high vacuum, then the ampoule tube was placed in a high-temperature furnace to separate ZnP 2 into Zn and P, and this Zn was diffused from the surface layer to the inside of the crystal to obtain a high-concentration p-type A contact layer was formed. This method is called the closed tube method or the cut-off method because it seals the ampoule tube. A conventional example of this method is described in Journal of Applied Physics, Volume 65 (1989), Item 553 (Journal of Appl).
ied Physics vol.65 (1989) pp.553).
【０００３】[0003]
【発明が解決しようとする課題】上記従来技術では、試
料サイズがアンプル管で制限されるため、数ｃｍ2程度
の大きさしか封入できず、大面積化に問題があった。ま
た、拡散濃度、および拡散深さが、微妙な封じ切りの方
法やＺｎＰ2の量に依存するため、拡散濃度、拡散深さ
のばらつきが大きく、制御性が極めて悪かった。In the above prior art, since the sample size is limited by the ampoule tube, only a size of about several cm 2 can be enclosed and there is a problem in increasing the area. Further, since the diffusion concentration and the diffusion depth depend on the delicate sealing method and the amount of ZnP 2 , the diffusion concentration and the diffusion depth vary greatly and the controllability is extremely poor.
【０００４】本発明の目的は拡散の大面積化、および制
御性の向上を図ることにある。An object of the present invention is to increase the area of diffusion and improve controllability.
【０００５】[0005]
【課題を解決するための手段】上記目的を達成するため
に、本発明では閉管法ではなく、気相成長装置による開
管法を用い、拡散原料は、ＺｎＰ2の代わりにＤＭＺ
ｎ、ＤＥＺｎ等のガス原料を用いた。拡散方法は、気相
雰囲気中にＤＭＺｎ、ＤＥＺｎ等を供給し、Ｚｎをコン
タクト層のＩｎＧａＡｓＰ、もしくはＩｎＧａＡｓ結晶
表面に吸着させ、コンタクト層中、もしくはコンタクト
層からクラッド層へＺｎを拡散させた。In order to achieve the above object, the present invention uses not the closed tube method but the open tube method using a vapor phase growth apparatus, and the diffusion raw material is DMZ instead of ZnP 2.
Gas raw materials such as n and DEZn were used. As the diffusion method, DMZn, DEZn, etc. were supplied into the gas phase atmosphere, Zn was adsorbed on the InGaAsP or InGaAs crystal surface of the contact layer, and Zn was diffused in the contact layer or from the contact layer to the cladding layer.
【０００６】[0006]
【作用】本発明の原理を図１を用いて説明する。まず、
ｎ型ＩｎＰ基板上に、アンドープＩｎＰクラッド層、ア
ンドープＩｎＧａＡｓＰコンタクト層を形成した。次に
４００℃の気相成長装置で３０分間、ＡｓＨ3、ＰＨ3、
ＤＭＺｎ、水素を流した。図１はこの時のＩｎＧａＡｓ
Ｐ、ＩｎＰ層中のＺｎによるｐ型キャリア濃度を示す。
ＩｎＰ層中でのｐ型濃度は１Ｅ１８であるのに対して、
ＩｎＧａＡｓＰ中でのｐ型濃度は１Ｅ１９あり、ＩｎＧ
ａＡｓＰ層中にＺｎが高濃度に取り込まれることを示
す。従ってコンタクト層にＩｎＧａＡｓＰ層を設けるこ
とによって高濃度のＺｎ気相拡散が可能となる。The principle of the present invention will be described with reference to FIG. First,
An undoped InP clad layer and an undoped InGaAsP contact layer were formed on the n-type InP substrate. Then, using a vapor phase growth apparatus at 400 ° C. for 30 minutes, AsH 3 , PH 3 ,
DMZn and hydrogen were flushed. Figure 1 shows InGaAs at this time.
The p-type carrier concentration due to Zn in the P and InP layers is shown.
While the p-type concentration in the InP layer is 1E18,
The p-type concentration in InGaAsP is 1E19, and InG
It is shown that Zn is incorporated in a high concentration in the aAsP layer. Therefore, by providing an InGaAsP layer in the contact layer, high-concentration Zn vapor phase diffusion becomes possible.
【０００７】本方法ではアンプル管では無く、数インチ
の結晶成長可能な気相成長装置を用いているため、大面
積化が可能である。また、原料にガスを用いているため
正確な流量制御ができ、制御性の向上が可能となる。In this method, a vapor phase growth apparatus capable of growing a crystal of several inches is used instead of an ampoule tube, so that the area can be increased. Further, since gas is used as the raw material, the flow rate can be accurately controlled, and the controllability can be improved.
【０００８】[0008]
【実施例】（実施例１）以下、本発明の一実施例を図１
〜図３により説明する。図２に断面を示すように、有機
金属気相成長法によりｎ−ＩｎＰ基板１上にアンドープ
ＩｎＰ層２を０．８μｍ、アンドープＩｎＧａＡｓＰ層
３（波長１．３μｍ、ＩｎＰに格子整合）を０．２μｍ
成長した。この時の成長温度は６００℃である。次に試
料を有機金属気相成長装置内に入れ、４５０℃でＰＨ3
（５０％、２０ｃｃ／ｍｉｎ）、ＤＭＺｎ（１０００ｐ
ｐｍ、１０００ｃｃ／ｍｉｎ）、水素（１００％、４リ
ットル／ｍｉｎ）を３０分間流した。(Embodiment 1) An embodiment of the present invention will be described below with reference to FIG.
~ It demonstrates by FIG. As shown in the cross section in FIG. 2, an undoped InP layer 2 of 0.8 μm and an undoped InGaAsP layer 3 (wavelength of 1.3 μm, lattice-matched to InP) were formed on the n-InP substrate 1 by a metal organic chemical vapor deposition method. 2 μm
grown. The growth temperature at this time is 600 ° C. Next, the sample is placed in a metalorganic vapor phase epitaxy apparatus and PH 3
(50%, 20 cc / min), DMZn (1000 p
pm, 1000 cc / min) and hydrogen (100%, 4 liters / min) for 30 minutes.
【０００９】図１はこの時のＺｎによるｐ型キャリア濃
度である。ＩｎＰ層中でのｐ型濃度は１Ｅ１８であるの
に対して、ＩｎＧａＡｓＰ中でのｐ型濃度は１Ｅ１９あ
り、ＩｎＧａＡｓＰ層中でのＺｎの取り込まれ率が高い
ことを示す。FIG. 1 shows the p-type carrier concentration due to Zn at this time. While the p-type concentration in the InP layer is 1E18, the p-type concentration in InGaAsP is 1E19, which shows that the incorporation rate of Zn in the InGaAsP layer is high.
【００１０】図２は気相拡散した試料の上にＳｉＯ2マ
スク４を形成し、さらにｐ側電極（Ｔｉ／Ｐｔ／Ａｕ）
を形成した時の断面図である。これにより、接触比抵抗
を測定したところ、１Ｅ−５Ω以下の値が得られた。こ
れは、ＩｎＰ層だけの接触比抵抗１Ｅ−４Ωに比べ十分
に低く、閉管法での値と比べても遜色なく、デバイス適
用できる値であった。In FIG. 2, a SiO 2 mask 4 is formed on a sample which has been vapor-phase diffused, and a p-side electrode (Ti / Pt / Au) is further formed.
It is sectional drawing when forming. As a result, when the contact resistivity was measured, a value of 1E-5Ω or less was obtained. This value was sufficiently lower than the contact specific resistance of 1E-4Ω only for the InP layer, and was comparable to the value in the closed tube method, and was a value applicable to the device.
【００１１】本装置では３インチのウエハまで作製する
ことができる。また、最近のＣＶＤ装置では多数枚も可
能である。本発明により、従来の閉管法に比べ十倍から
百倍程度の大面積化が可能である。With this apparatus, up to a 3-inch wafer can be manufactured. Moreover, a large number of recent CVD apparatuses are possible. According to the present invention, it is possible to increase the area by about 10 to 100 times as compared with the conventional closed tube method.
【００１２】図３は、実施例１での拡散時間に対する拡
散深さの依存性であり、従来の閉管法に比べ、ばらつき
を１／５程度に抑えることができた。FIG. 3 shows the dependence of the diffusion depth on the diffusion time in Example 1, and the variation could be suppressed to about 1/5 as compared with the conventional closed tube method.
【００１３】尚、本実施例ではコンタクト層に波長１．
３μｍのＩｎＧａＡｓＰ層を用いたが、他の波長、もし
くはＩｎＧａＡｓ層においても同等の効果が得られる。
また、拡散条件としてキャリアガスに水素を用いたが、
窒素を用いても同等の効果が得られる。同様に、Ｖ族ガ
スとしてＡｓＨ3、もしくはＡｓＨ3、ＰＨ3の混合ガス
を用いても良い。In this embodiment, the contact layer has a wavelength of 1.
Although the InGaAsP layer of 3 μm is used, the same effect can be obtained at other wavelengths or the InGaAsP layer.
Also, hydrogen was used as the carrier gas as the diffusion condition,
The same effect can be obtained by using nitrogen. Similarly, AsH 3 or a mixed gas of AsH 3 and PH 3 may be used as the group V gas.
【００１４】（実施例２）以下、本発明の実施例２を図
４により説明する。図４は本発明をフォトダイオードに
適用した例である。有機金属気相成長法により、ｎ−Ｉ
ｎＰ基板１上にアンドープＩｎＰ層２を１μｍ、アンド
ープＩｎＧａＡｓ層６（波長１．６７μｍ、ＩｎＰに格
子整合）を１μｍ、アンドープＩｎＰ層２を１μｍ、ア
ンドープＩｎＧａＡｓＰ層７（波長１．１０μｍ、Ｉｎ
Ｐに格子整合）を０．１μｍ成長した。次にアンドープ
ＩｎＧａＡｓＰ層７を硫酸系エッチング液により選択的
にエッチングし、部分的にコンタクト層を形成した。多
層構造を気相成長装置に導入し、４００℃でＰＨ3（５
０％、１０ｃｃ／ｍｉｎ）、ＤＭＺｎ（２０００ｐｐ
ｍ、２０００ｃｃ／ｍｉｎ）、水素（１００％、４リッ
トル／ｍｉｎ）を３０分間流した。ＩｎＧａＡｓＰ層７
をマスクとしてｐ型ハイドープＩｎＰ拡散層８（Ｚｎ濃
度：８Ｅ１８）を気相拡散により形成した。(Second Embodiment) A second embodiment of the present invention will be described below with reference to FIG. FIG. 4 shows an example in which the present invention is applied to a photodiode. N-I was obtained by metalorganic vapor phase epitaxy.
On the nP substrate 1, the undoped InP layer 2 is 1 μm, the undoped InGaAs layer 6 (wavelength 1.67 μm, lattice matching with InP) is 1 μm, the undoped InP layer 2 is 1 μm, and the undoped InGaAsP layer 7 (wavelength 1.10 μm, In
0.1 μm was grown to a lattice match with P). Next, the undoped InGaAsP layer 7 was selectively etched with a sulfuric acid-based etching solution to partially form a contact layer. The multilayer structure was introduced into a vapor phase growth apparatus, and PH 3 (5
0%, 10 cc / min), DMZn (2000 pp
m, 2000 cc / min) and hydrogen (100%, 4 l / min) for 30 minutes. InGaAsP layer 7
Using as a mask, a p-type highly doped InP diffusion layer 8 (Zn concentration: 8E18) was formed by vapor phase diffusion.
【００１５】本実施例では、従来の閉管法に比べ、１０
倍から１００倍程度の大面積化が可能となり、ばらつき
の１／５程度に低減できた。In this embodiment, as compared with the conventional closed tube method, 10
It is possible to increase the area by a factor of 2 to 100 and reduce the variation to about 1/5.
【００１６】[0016]
【発明の効果】本装置では３インチのウエハまで作製す
ることができる。また、最近のＣＶＤ装置では多数枚も
可能であり、十倍から百倍程度の大面積化が可能であ
る。また、成長中のドーピングでは面内のドーピング濃
度は一様であるが、本発明ではコンタクト層をマスクと
して、面内で選択的なドーピングが可能である。According to the present apparatus, a 3-inch wafer can be manufactured. In addition, a large number of recent CVD apparatuses are possible, and the area can be increased to about 10 to 100 times. Further, in the case of doping during growth, the in-plane doping concentration is uniform, but in the present invention, the in-plane selective doping can be performed using the contact layer as a mask.
【００１７】図３は、実施例１での拡散時間に対する拡
散深さの依存性であり、従来の閉管法でのばらつきを１
／５程度に抑えることができた。FIG. 3 shows the dependence of the diffusion depth on the diffusion time in the first embodiment, and the variation in the conventional closed tube method is 1
It could be suppressed to about / 5.
【図１】実施例１での本発明の原理を示す特性図。FIG. 1 is a characteristic diagram showing the principle of the present invention in a first embodiment.
【図２】接触比抵抗測定用の素子の断面図。FIG. 2 is a sectional view of an element for measuring contact specific resistance.
【図３】本発明の効果を示す、拡散深さの時間依存性の
特性図。FIG. 3 is a characteristic diagram of time dependence of diffusion depth showing the effect of the present invention.
【図４】本発明をフォトダイオードに適用した例の断面
図。FIG. 4 is a sectional view of an example in which the present invention is applied to a photodiode.
１…ｎ−ＩｎＰ基板、２…アンドープＩｎＰ層、３…ア
ンドープＩｎＧａＡｓＰ層。1 ... n-InP substrate, 2 ... undoped InP layer, 3 ... undoped InGaAsP layer.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 古森 正明 東京都国分寺市東恋ケ窪１丁目280番地 株式会社日立製作所中央研究所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Masaaki Furumori 1-280 Higashi Koigokubo, Kokubunji, Tokyo Inside the Central Research Laboratory, Hitachi, Ltd.
Claims (2)
ンタクト層、ｐ型電極を有し、上記ｐ型コンタクト層の
結晶組成がＩｎＧａＡｓ、ＩｎＧａＡｓＰである半導体
装置のｐ型コンタクト層を、多層成長後に開管法での気
相拡散によりドーピングする工程により形成することを
特徴とするｐ型コンタクト層の形成方法。1. A p-type contact layer of a semiconductor device having a p-type cladding layer, a p-type contact layer, and a p-type electrode on a semiconductor substrate, wherein the p-type contact layer has a crystal composition of InGaAs or InGaAsP. A method for forming a p-type contact layer, which is formed by a step of doping by vapor phase diffusion by an open tube method after multi-layer growth.
拡散時の原料ガスがＤＭＺｎ、ＤＥＺｎ等のガスであ
り、これにＰ、ＡｓのＶ族ガス、及び水素、窒素等のキ
ャリアガスが加えられていることを特徴とする請求項１
記載のｐ型コンタクト層の形成方法。2. The material gas according to claim 1, wherein the source gas at the time of the vapor phase diffusion of p-type impurities is a gas such as DMZn and DEZn, and a group V gas of P and As and a carrier gas such as hydrogen and nitrogen. The method according to claim 1, wherein
The method for forming a p-type contact layer as described above.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9274393A JPH06310449A (en) | 1993-04-20 | 1993-04-20 | Vapor phase diffusion |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9274393A JPH06310449A (en) | 1993-04-20 | 1993-04-20 | Vapor phase diffusion |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06310449A true JPH06310449A (en) | 1994-11-04 |
Family
ID=14062903
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9274393A Pending JPH06310449A (en) | 1993-04-20 | 1993-04-20 | Vapor phase diffusion |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06310449A (en) |
Cited By (2)
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| JP6384646B1 (en) * | 2017-05-12 | 2018-09-05 | 三菱電機株式会社 | Manufacturing method of semiconductor device |
| JP6509455B1 (en) * | 2018-05-24 | 2019-05-08 | 三菱電機株式会社 | Method of manufacturing III-V compound semiconductor device |
-
1993
- 1993-04-20 JP JP9274393A patent/JPH06310449A/en active Pending
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|---|---|---|---|---|
| JP6384646B1 (en) * | 2017-05-12 | 2018-09-05 | 三菱電機株式会社 | Manufacturing method of semiconductor device |
| WO2018207355A1 (en) * | 2017-05-12 | 2018-11-15 | 三菱電機株式会社 | Semiconductor device production method |
| CN110603623A (en) * | 2017-05-12 | 2019-12-20 | 三菱电机株式会社 | Method for manufacturing semiconductor device |
| US10910222B2 (en) | 2017-05-12 | 2021-02-02 | Mitsubishi Electric Corporation | Method for manufacturing semiconductor device |
| CN110603623B (en) * | 2017-05-12 | 2023-05-30 | 三菱电机株式会社 | Method for manufacturing semiconductor device |
| JP6509455B1 (en) * | 2018-05-24 | 2019-05-08 | 三菱電機株式会社 | Method of manufacturing III-V compound semiconductor device |
| WO2019224966A1 (en) * | 2018-05-24 | 2019-11-28 | 三菱電機株式会社 | Method for producing group iii-v compound semiconductor device |
| CN112154535A (en) * | 2018-05-24 | 2020-12-29 | 三菱电机株式会社 | Method for manufacturing III-V group compound semiconductor device |
| US11417524B2 (en) | 2018-05-24 | 2022-08-16 | Mitsubishi Electric Corporation | Manufacturing method of a group III-V compound semiconductor device |
| CN112154535B (en) * | 2018-05-24 | 2024-04-30 | 三菱电机株式会社 | Method for manufacturing III-V compound semiconductor device |
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