JPH06306579A - Formation of metallic film - Google Patents
Formation of metallic filmInfo
- Publication number
- JPH06306579A JPH06306579A JP10298693A JP10298693A JPH06306579A JP H06306579 A JPH06306579 A JP H06306579A JP 10298693 A JP10298693 A JP 10298693A JP 10298693 A JP10298693 A JP 10298693A JP H06306579 A JPH06306579 A JP H06306579A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- film
- forming
- temp
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、光ディスク基板との付
着力に優れた金属反射膜形成に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the formation of a metal reflective film having excellent adhesion to an optical disk substrate.
【０００２】[0002]
【従来の技術】現在、光ディスク基板用材料としてガラ
スとプラスチック（樹脂）が用いられているが、軽量・
加工の容易さ・量産性などの理由から後者の利用が主と
なっている。その中でも、メタクリル系樹脂は光学的特
性が極めて優れており、現在、レーザーディスク等に使
用されている。2. Description of the Related Art Currently, glass and plastic (resin) are used as materials for optical disk substrates, but they are lightweight and
The latter is mainly used because of its ease of processing and mass productivity. Among them, methacrylic resin has extremely excellent optical characteristics and is currently used in laser disks and the like.
【０００３】レーザーディスクなどの光ディスクは、表
面にピットを持った樹脂基板上に反射膜としてアルミニ
ウムやアルミニウム合金等の金属膜を付けたものであ
る。この金属膜を形成する方法としては、光ディスク用
樹脂基板上に金属反射膜を形成する方法は、主として真
空蒸着法とスパッタリング法がある。An optical disk such as a laser disk is a resin substrate having pits on its surface and a metal film such as aluminum or aluminum alloy attached as a reflective film. As a method for forming this metal film, there are mainly a vacuum evaporation method and a sputtering method as a method for forming a metal reflection film on a resin substrate for an optical disk.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、スパッ
タリング法は、生産性がよいなどの利点を持つが、メタ
クリル系樹脂基板を用いた場合、スパッタリング法で
は、密着性良好な反射膜を得ることができない。そのた
めに、メタクリル系樹脂基板を用いた場合、従来から、
真空蒸着法が基板上への金属反射膜形成に用いられてい
る。However, although the sputtering method has advantages such as high productivity, when a methacrylic resin substrate is used, it is not possible to obtain a reflective film with good adhesion by the sputtering method. . Therefore, when using a methacrylic resin substrate, conventionally,
The vacuum deposition method is used for forming a metal reflective film on a substrate.
【０００５】この発明は、上述の背景に基づきなされた
ものであり、その目的とするところは、軽量・加工の容
易さ・量産性に優れたメタクリル系樹脂基板に、生産性
が良好なスパッタリング法により、密着性良好な反射膜
を得ることができる金属膜形成方法を提供することであ
る。The present invention has been made on the basis of the above background, and an object thereof is to provide a methacrylic resin substrate which is lightweight, easy to process, and excellent in mass productivity, and a sputtering method which has a good productivity. Accordingly, it is an object of the present invention to provide a metal film forming method capable of obtaining a reflective film having good adhesion.
【０００６】[0006]
【課題を解決するための手段】上記課題は、この発明に
より解決される。すなわち、この発明による金属膜形成
方法は、ポリメチルメタクリレートまたはメチルメタク
リレートの共重合物が主成分である光ディスク基板上
に、反射膜として反射膜用金属、好ましくは、アルミニ
ウムまたはアルミニウム合金の金属膜をスパッタリング
法により形成する際、前処理としてまたは／および成膜
中に基板表面温度が、基板のガラス転移温度（Ｔｇ）よ
り５０゜低い温度（Ｔｇ−５０）℃と基板のガラス転移
温度（Ｔｇ）より１５゜高い温度（Ｔｇ＋１５）℃との
範囲内に、好ましくは、（Ｔｇ−４０）℃〜（Ｔｇ＋１
０）℃との範囲内に加熱することを特徴とするものであ
る。The above-mentioned problems can be solved by the present invention. That is, the method for forming a metal film according to the present invention is such that a metal for a reflective film, preferably a metal film of aluminum or an aluminum alloy is used as a reflective film on an optical disk substrate whose main component is a polymethylmethacrylate or a copolymer of methylmethacrylate. When forming by a sputtering method, the substrate surface temperature is 50 ° C. lower than the glass transition temperature (Tg) of the substrate (Tg-50) ° C. and the glass transition temperature (Tg) of the substrate as pretreatment and / or during film formation. Within a range of (Tg + 15) ° C. higher than 15 °, preferably (Tg-40) ° C. to (Tg + 1)
It is characterized by heating within the range of 0) ° C.
【０００７】この発明において用いられるスパッタリン
グ法とは、真空容器内に導入したアルゴンなどの不活性
ガスをイオン化し、それをターゲットと呼ばれる固体表
面に衝突させ固体粒子を叩き出し基板上に膜を形成する
方法であり、プラズマ中でイオンを利用するプラズマ方
式、高真空領域にイオンを引き出して利用するイオンビ
ーム方式などがある。The sputtering method used in the present invention is to ionize an inert gas such as argon introduced into a vacuum container and collide it with a solid surface called a target to knock out solid particles to form a film on a substrate. There are a plasma method that uses ions in plasma, an ion beam method that draws and uses ions in a high vacuum region.
【０００８】一般的にプラズマ方式は基板を設置した真
空容器内雰囲気を膜形成時に１０-1Torr〜１０-3Torr程
度とし、スパッタ電圧は２００V〜２KVとして用いられ
るが、用途やスパッタリング装置等に応じて適宜変更し
記述した範囲外で用いてもかまわない。また、真空容器
内にはアルゴンなどの不活性ガス、不活性ガスと酸素、
窒素等の活性ガスとの混合ガスを導入するのが好まし
い。Generally, in the plasma system, the atmosphere in the vacuum chamber in which the substrate is installed is set to about 10 -1 Torr to 10 -3 Torr and the sputtering voltage is set to 200 V to 2 KV. It may be appropriately changed and used outside the range described. Also, in the vacuum container, an inert gas such as argon, an inert gas and oxygen,
It is preferable to introduce a mixed gas with an active gas such as nitrogen.
【０００９】イオンビーム方式は一般的に、基板を設置
した真空容器内雰囲気を膜形成時に１０-4Torr台より高
真空にし、スパッタ電圧５KV以下で用いられるが、上述
のプラズマ方式と同様、用途などに応じて適宜変更し記
述した範囲外としてもかまわない。The ion beam system is generally used at a sputtering chamber voltage of 5 KV or less by setting the atmosphere in the vacuum container in which the substrate is placed to a vacuum higher than 10 -4 Torr during film formation. It may be changed as appropriate according to the circumstances, and may be outside the range described.
【００１０】この発明において、基板表面は、反射膜と
して金属膜をスパッタリング法により形成する前に、ま
たは／および、その形成（成膜）中に、所定の温度範囲
内になるように加熱される。前処理として加熱するか、
成膜中に加熱するかは、用途、条件等に応じて適宜変更
できる。In the present invention, the surface of the substrate is heated to a predetermined temperature range before or / and during the formation (film formation) of the metal film as the reflection film by the sputtering method. . Heating as pretreatment,
Whether or not the film is heated during film formation can be appropriately changed depending on the application, conditions and the like.
【００１１】この発明における加熱方法は、接触加熱、
転写加熱、雰囲気加熱、誘電加熱などがある。好ましく
は、加熱は、基板表面およびその近傍にのみ加熱する。The heating method in the present invention includes contact heating,
There are transfer heating, atmosphere heating, dielectric heating and the like. Preferably, the heating is performed only on the substrate surface and its vicinity.
【００１２】この発明における基板表面温度は、（Ｔｇ
−５０）℃〜（Ｔｇ＋１５）℃、好ましくは、（Ｔｇ−
４０）℃〜（Ｔｇ＋１０）℃との範囲内に加熱される。
これは、基板表面温度が（Ｔｇ−５０）℃未満の場合、
耐スパッタリング性を向上させるのに要する処理時間が
長くなり生産性に影響を与えてしまうからである。ま
た、（Ｔｇ＋１５）℃を越えた場合、ピット形状に影響
を与え再生信号特性が悪くなるからである。The substrate surface temperature in this invention is (Tg
-50) ° C to (Tg + 15) ° C, preferably (Tg-
It is heated in the range of 40) ° C to (Tg + 10) ° C.
This means that when the substrate surface temperature is lower than (Tg-50) ° C,
This is because the processing time required to improve the sputtering resistance becomes long and the productivity is affected. Also, if (Tg + 15) ° C. is exceeded, the pit shape is affected and the reproduction signal characteristics deteriorate.
【００１３】[0013]
【作用】上記構成を有するこの発明により、以下の作用
・機能を発揮する。理論的に必ずしも明らかではない
が、基板表面のみ、若しくはその近傍を加熱することに
より、基板表面から低分子物質を除去され、また、基板
や基板表面から表面加熱により、強制的にガス分を放出
させ、その結果、基板樹脂と金属膜との間の、化学的・
物理的結合を強くして、耐スパッタリング性（密着性）
を向上させると考えられる。According to the present invention having the above structure, the following functions and functions are exhibited. Although it is not always theoretically clear, low molecular weight substances are removed from the substrate surface by heating only the surface of the substrate or its vicinity, and gas is forcibly released by heating the substrate and the surface of the substrate. As a result, the chemical
Strengthening the physical bond, resistance to sputtering (adhesion)
Is thought to improve.
【００１４】[0014]
【実施例】この発明を以下の実施例により、具体的に説
明する。 実施例１ ガラス転移温度Ｔｇ（測定方法：示差走査熱量測定、昇
温５℃／分）が９５℃のメタクリル系樹脂の光ディスク
基板を用いて、基板表面温度が７５℃になるよう、赤外
線ランプヒーターで、成膜直前に加熱した。引き続き、
スパッタリング装置（日本真空技術株式会社製）で、ア
ルゴンガス雰囲気中、φ４インチアルミニウムターゲッ
トにより、光ディスク基板上に膜厚６００オングストロ
ームのアルミニウム反射膜を成膜した。The present invention will be specifically described with reference to the following examples. Example 1 A glass transition temperature Tg (measurement method: differential scanning calorimetry, temperature increase: 5 ° C./min) of an methacrylic resin optical disk substrate having a temperature of 95 ° C. was used, and an infrared lamp heater was used so that the substrate surface temperature was 75 ° C. Then, it was heated just before the film formation. Continuing,
A sputtering apparatus (manufactured by Nippon Vacuum Technology Co., Ltd.) was used to form a 600 Å thick aluminum reflective film on the optical disk substrate using a φ4 inch aluminum target in an argon gas atmosphere.
【００１５】得られた金属膜について密着性を、以下の
ように、評価した。粘着テープの粘着面をアルミニウム
膜に密着させ、すばやく引きはがす剥離テストにより評
価した結果、いずれの膜厚でも、アルミニウム膜は剥離
せず、密着性が良好であり、反射率も十分であった。The adhesion of the obtained metal film was evaluated as follows. The adhesive surface of the adhesive tape was brought into close contact with the aluminum film, and the results were evaluated by a peeling test in which the film was quickly peeled off.
【００１６】実施例２ Ｔｇが８５℃のメタクリル系樹脂の光ディスク基板を用
いて、基板表面温度が１００℃に加熱処理した以外、実
施例１と同様に、成膜して評価した。この結果、膜厚９
００オングストロームの金属膜でも、良好な密着性と反
射率を示した。Example 2 A film was formed and evaluated in the same manner as in Example 1 except that an optical disk substrate made of a methacrylic resin having a Tg of 85 ° C. was used and the substrate surface temperature was 100 ° C. As a result, the film thickness 9
Good adhesion and reflectance were exhibited even with a metal film of 00 Å.
【００１７】比較例１ 加熱処理を行わない従来の方法で上記実施例１の樹脂基
板を用い、同様にアルミニウム膜を形成し、密着性を評
価した。その結果、膜厚３００オングストローム以下で
は剥離しなかったが、それ以上の膜厚で全面剥離した。
なお、アルミニウム膜厚３００オングストロームでは反
射率は充分でなかった。Comparative Example 1 An aluminum film was similarly formed by using the resin substrate of Example 1 described above by a conventional method without heat treatment, and the adhesion was evaluated. As a result, the film was not peeled off at a film thickness of 300 angstroms or less, but was peeled off on the entire surface at a film thickness above that.
The reflectance was not sufficient when the aluminum film thickness was 300 Å.
【００１８】比較例２ 上記実施例２の樹脂基板を用い、基板表面温度が（Ｔｇ
−５０）℃〜（Ｔｇ＋１５）℃の範囲外である１０５℃
になるよう加熱処理をし、スパッタリングによりアルミ
ニウム膜を形成した。上記と同様の剥離テストで評価し
た結果、膜厚９００オングストローム以下のアルミニウ
ム膜は剥離せず密着性は充分であったが、再生信号特性
が良好ではなかった。Comparative Example 2 Using the resin substrate of Example 2 above, the substrate surface temperature was (Tg
105 ° C, which is outside the range of -50) ° C to (Tg + 15) ° C
Then, the aluminum film was formed by sputtering. As a result of evaluation by a peeling test similar to the above, an aluminum film having a film thickness of 900 angstroms or less was not peeled and adhesion was sufficient, but the reproduction signal characteristics were not good.
【００１９】[0019]
【発明の効果】上記実施例から実証されるように、この
発明により、メタクリル系樹脂基板上にスパッタリング
法でアルミニウムまたはアルミニウム合金等の金属の反
射膜形成が可能となり、従来の真空蒸着法による成膜方
法に比べ、生産性を向上させコストを低減することがで
きる。As demonstrated by the above examples, according to the present invention, it is possible to form a reflective film of a metal such as aluminum or an aluminum alloy on a methacrylic resin substrate by a sputtering method, and the conventional vacuum deposition method is used. Compared with the membrane method, productivity can be improved and cost can be reduced.
Claims (3)
メタクリレートの共重合物が主成分である光ディスク基
板上に、反射膜として反射膜用金属の金属膜をスパッタ
リング法により形成する際、前処理としてまたは／およ
び成膜中に基板表面温度が、基板のガラス転移温度（Ｔ
ｇ）より５０゜低い温度（Ｔｇ−５０）℃と基板のガラ
ス転移温度（Ｔｇ）より１５゜高い温度（Ｔｇ＋１５）
℃との範囲内に加熱することを特徴とする金属膜形成方
法。1. When forming a metal film of a metal for a reflective film as a reflective film on an optical disk substrate whose main component is polymethyl methacrylate or a copolymer of methyl methacrylate by a sputtering method, as a pretreatment and / or a pretreatment. In the film, the substrate surface temperature is the glass transition temperature (T
g) 50 ° C. lower (Tg-50) ° C. and 15 ° C. higher than the glass transition temperature (Tg) of the substrate (Tg + 15)
A method for forming a metal film, which comprises heating within a range of ° C.
度が、（Ｔｇ−４０）℃〜（Ｔｇ＋１０）℃との範囲内
に設定される請求項１記載の金属膜形成方法。2. The method for forming a metal film according to claim 1, wherein the substrate surface temperature by the pretreatment or during film formation is set in the range of (Tg-40) ° C. to (Tg + 10) ° C.
ルミニウム合金である請求項１または２記載の金属膜形
成方法。3. The method for forming a metal film according to claim 1, wherein the metal for the reflective film is aluminum or an aluminum alloy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10298693A JPH06306579A (en) | 1993-04-28 | 1993-04-28 | Formation of metallic film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10298693A JPH06306579A (en) | 1993-04-28 | 1993-04-28 | Formation of metallic film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06306579A true JPH06306579A (en) | 1994-11-01 |
Family
ID=14342039
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10298693A Pending JPH06306579A (en) | 1993-04-28 | 1993-04-28 | Formation of metallic film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06306579A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004024804A1 (en) * | 2002-09-10 | 2004-03-25 | National Institute Of Advanced Industrial Science And Technology | Method for producing poly(methyl methacrylate)-metal cluster composite |
| JP2017082291A (en) * | 2015-10-29 | 2017-05-18 | 株式会社島津製作所 | Film deposition method, and film deposition apparatus |
-
1993
- 1993-04-28 JP JP10298693A patent/JPH06306579A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004024804A1 (en) * | 2002-09-10 | 2004-03-25 | National Institute Of Advanced Industrial Science And Technology | Method for producing poly(methyl methacrylate)-metal cluster composite |
| GB2408738A (en) * | 2002-09-10 | 2005-06-08 | Nat Inst Of Advanced Ind Scien | Method for producing poly(methyl methacrylate)-metal cluster composite |
| GB2408738B (en) * | 2002-09-10 | 2006-12-06 | Nat Inst Of Advanced Ind Scien | Method for producing Poly(Methyl Methacrylate)-metal cluster composite |
| KR100851790B1 (en) * | 2002-09-10 | 2008-08-13 | 도꾸리쯔교세이호진 상교기쥬쯔 소고겡뀨죠 | Method for producing polymethyl methacrylate-metal cluster composite |
| JP2017082291A (en) * | 2015-10-29 | 2017-05-18 | 株式会社島津製作所 | Film deposition method, and film deposition apparatus |
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