JPH06303088A - High frequency circuit element - Google Patents

High frequency circuit element

Info

Publication number
JPH06303088A
JPH06303088A JP5086299A JP8629993A JPH06303088A JP H06303088 A JPH06303088 A JP H06303088A JP 5086299 A JP5086299 A JP 5086299A JP 8629993 A JP8629993 A JP 8629993A JP H06303088 A JPH06303088 A JP H06303088A
Authority
JP
Japan
Prior art keywords
surface acoustic
acoustic wave
traveling direction
respect
circuit element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP5086299A
Other languages
Japanese (ja)
Inventor
Mitsuhiko Goto
光彦 後藤
Masaaki Sugiyama
昌章 杉山
Takushi Okita
拓士 沖田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Steel Corp
Original Assignee
Nippon Steel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Steel Corp filed Critical Nippon Steel Corp
Priority to JP5086299A priority Critical patent/JPH06303088A/en
Publication of JPH06303088A publication Critical patent/JPH06303088A/en
Withdrawn legal-status Critical Current

Links

Abstract

PURPOSE:To provide a high frequency circuit element in which a surface acoustic wave can be positively fetched and absorbed between a pair of grooves. CONSTITUTION:In a high frequency circuit element in which a surface acoustic wave element 2 and the other elements are combined and formed on a same substrate 1, and a blocking part which blocks the propagation of the surface acoustic wave to the other element is formed on the substrate 1. In the blocking part, a pair of grooves 4 whose inclined directions against the proceeding direction of the surface acoustic wave are alternatively changed are successively formed like a saw-tooth so that they can be adjacent while each inclination less than 5 deg. can be held against the proceeding direction of the surface acoustic wave.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、高周波回路に使用され
る高周波回路素子に係り、特に、表面弾性波を励振、受
信する機能を持った表面弾性波素子とその他の素子とが
同一基板上に配置されている高周波回路素子に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high frequency circuit element used in a high frequency circuit, and more particularly to a surface acoustic wave element having a function of exciting and receiving a surface acoustic wave on the same substrate. The present invention relates to a high-frequency circuit element arranged in.

【0002】[0002]

【従来の技術】近年、携帯電話、MCA(Multi Channel
Access)無線等の数百MHzから数GHzの高周波域で
使用する移動体無線の普及に伴い、無線機器には小型軽
量化が求められており、必然的にこれら無線機器に用い
られる部品にも小型軽量化が望まれている。とくに高周
波域の信号を扱う高周波増幅回路やフィルタは、通常の
信号処理に用いられるLSI等に比べて小型軽量化が進
んでいるとはいえず、現在、このような高周波域で使用
される部品の小型軽量化が強く求められているところで
ある。
2. Description of the Related Art In recent years, mobile phones, MCA (Multi Channel)
Access) With the spread of mobile radios used in a high frequency range of several hundred MHz to several GHz, wireless devices are required to be small and lightweight, and inevitably also for components used in these wireless devices. It is desired to reduce the size and weight. In particular, it cannot be said that the high-frequency amplifier circuits and filters that handle signals in the high-frequency range are smaller and lighter than LSIs used for normal signal processing, and currently, parts used in such high-frequency ranges are used. There is a strong demand for smaller size and lighter weight.

【0003】その中でも圧電体を利用した表面弾性波素
子は、これまで用いられてきた同軸フィルタやヘリカル
フィルタ等に比べ小型軽量にフィルタ素子を構成するこ
とができるため、高周波用途部品の小型軽量化を進める
上で注目を集めている。この表面弾性波素子について
は、これをフィルタ単体として作製するのではなく、一
部に高周波増幅素子が形成された半導体基板上の他の一
部に窒化アルミニウム等の圧電体薄膜を成膜し表面弾性
波素子を形成した高周波集積回路素子が提唱されている
(たとえばTsubouchi K;IEEE Trans.Sonics.Ultrason
Vol.32, No.5, P634(1985)) 。
Among them, the surface acoustic wave element using the piezoelectric body can be made smaller and lighter than the coaxial filter and the helical filter which have been used so far, so that the high frequency component can be made smaller and lighter. Is attracting attention as it advances. This surface acoustic wave device is not manufactured as a single filter, but is formed by forming a piezoelectric thin film such as aluminum nitride on another part of the semiconductor substrate on which a high frequency amplifying device is formed. A high frequency integrated circuit device formed with an acoustic wave device has been proposed (for example, Tsubouchi K; IEEE Trans.Sonics.Ultrason.
Vol.32, No.5, P634 (1985)).

【0004】しかし、このように高周波増幅素子と表面
弾性波素子とを同一基板上に設けた場合には、表面弾性
波素子からの表面弾性波が基板上の高周波増幅素子等の
周辺素子に伝わって干渉し、回路としての特性を劣化さ
せるという問題があり、集積度を上げるうえでその解決
が望まれている。
However, when the high frequency amplifying element and the surface acoustic wave element are thus provided on the same substrate, the surface acoustic wave from the surface acoustic wave element is transmitted to the peripheral elements such as the high frequency amplifying element on the substrate. However, there is a problem in that the characteristics of the circuit are deteriorated due to the interference with each other.

【0005】従来、こうした、同一基板上に高周波増幅
素子と表面弾性波素子とを形成したときの表面弾性波の
伝搬による同一基板上の他の素子への影響を防止するた
めの方策として、たとえば、表面弾性波素子を形成する
圧電体薄膜の周囲に溝や穴を形成して表面弾性波を散乱
させたり、あるいは吸収材によって表面弾性波を吸収さ
せること等が提案されている(実公昭57−50813
号公報、特開平2−25104号公報、特開平3−14
5320号公報)。
Conventionally, as a measure for preventing the influence of the propagation of the surface acoustic wave on other elements on the same substrate when the high frequency amplification element and the surface acoustic wave element are formed on the same substrate, for example, It has been proposed to form a groove or a hole around a piezoelectric thin film forming a surface acoustic wave element to scatter the surface acoustic wave, or to absorb the surface acoustic wave by an absorbing material (Actual publication 57). 50813
Japanese Patent Laid-Open No. 2-25104, Japanese Patent Laid-Open No. 3-14
5320).

【0006】[0006]

【発明が解決しようとする課題】しかしながら、上述し
たような従来の高周波回路素子においては、表面弾性波
素子からの表面弾性波を溝や穴等で散乱させるようにし
ていたので、反射した表面弾性波のレベルが低下すると
はいえ、表面弾性波が他の素子に及ぼす影響が完全には
なくなるわけではなく、散乱表面弾性波と他の素子との
間の干渉のおそれは依然として存在する。また、吸収材
を用いる方法では、ふつう吸収材として主に樹脂等を用
いるので、半導体基板汚染の原因になりやすい。半導体
素子を作製するときには汚染は極力避けるべきであり、
樹脂等の吸収材を用いないで干渉を防止することが望ま
れる。
However, in the conventional high frequency circuit element as described above, the surface acoustic wave from the surface acoustic wave element is scattered by the grooves or holes, so that the reflected surface acoustic wave is generated. Although the wave level is reduced, the effect of surface acoustic waves on other elements is not completely eliminated, and there is still the risk of interference between scattered surface acoustic waves and other elements. Further, in the method using the absorber, since resin or the like is usually used as the absorber, it is likely to cause contamination of the semiconductor substrate. Contamination should be avoided as much as possible when manufacturing semiconductor devices,
It is desired to prevent interference without using an absorber such as resin.

【0007】本発明は、このような従来技術の問題点に
鑑みてなされたものであり、表面弾性波を散乱させるの
ではなく、一対の直線の溝の間に積極的に取り込んで吸
収するように構成された溝を有する高周波回路素子の提
供を目的とする。
The present invention has been made in view of the above-mentioned problems of the prior art. Instead of scattering the surface acoustic wave, the surface acoustic wave is positively taken between and absorbed by a pair of linear grooves. An object of the present invention is to provide a high-frequency circuit element having a groove configured as described above.

【0008】[0008]

【課題を解決するための手段】上記目的を達成するため
の本発明は、同一基板上に少なくとも1つの表面弾性波
素子を含む複合素子が形成され、当該基板上には当該表
面弾性波素子以外の他の素子への表面弾性波の伝搬を阻
止する素子部が形成された高周波回路素子であって、当
該溝は、前記表面弾性波の進行方向に対する傾斜方向を
交互に変えて当該進行方向に伸延する一対の直線の溝が
前記表面弾性波の進行方向に対してそれぞれ一定の傾斜
角を保つように隣り合ってのこぎり刃状に連続して形成
されたものであり、かつ前記溝の傾斜角は前記表面弾性
波の進行方向に対して5度以下とされていることを特徴
とする。
According to the present invention for achieving the above object, a composite element including at least one surface acoustic wave element is formed on the same substrate, and other than the surface acoustic wave element is formed on the substrate. A high-frequency circuit element in which an element portion for preventing the propagation of the surface acoustic wave to other elements is formed, wherein the groove alternately changes the inclination direction with respect to the traveling direction of the surface acoustic wave in the traveling direction. A pair of straight extending grooves are formed continuously in a saw-tooth shape adjacent to each other so as to maintain a constant inclination angle with respect to the traveling direction of the surface acoustic wave, and the inclination angle of the groove Is less than 5 degrees with respect to the traveling direction of the surface acoustic wave.

【0009】また阻止部は前記表面弾性波の進行方向に
対する傾斜方向を交互に変えて当該進行方向に伸延する
一対の表面弾性波素子側に凸である曲線の溝が前記表面
弾性波の進行方向に対してそれぞれ一定の傾斜形状を保
つように隣り合って、のこぎり刃に類似した形状に連続
して形成されたものであり、かつ、前記溝の傾斜角の最
大値は、前期表面弾性波の進行方向に対して5度以下と
されていることを特徴とする。
The blocking portion has a curved groove convex toward the pair of surface acoustic wave elements extending in the traveling direction by alternately changing the inclination direction with respect to the traveling direction of the surface acoustic wave. With respect to each other so as to maintain a constant inclined shape, is formed continuously in a shape similar to a saw blade, and the maximum value of the inclination angle of the groove, It is characterized in that it is set to 5 degrees or less with respect to the traveling direction.

【0010】[0010]

【作用】このように構成された本発明にあっては、同一
基板上に形成されている表面弾性波素子からの表面弾性
波は、当該表面弾性波素子とこの表面弾性波素子以外の
他の素子との間に設けられている阻止部によって吸収、
阻止される。
According to the present invention having such a configuration, the surface acoustic wave from the surface acoustic wave device formed on the same substrate is not affected by the surface acoustic wave device and the other surface acoustic wave device. Absorbed by the blocking part provided between the element,
Be blocked.

【0011】すなわち、この阻止部は、表面弾性波の進
行方向に対する傾斜方向を交互に変えて当該進行方向に
伸延する一対の直線の溝が前記表面弾性波の進行方向に
対してそれぞれ一定の傾斜角を保つように隣り合っての
こぎり刃状に連続して形成されているものであって、さ
らに、前記溝の傾斜角は前記表面弾性波の進行方向に対
して5度以下とされているので、この溝に向かって進行
する表面弾性波は前記の一対の溝との間で多重反射を繰
り返すことになり、この多重反射を繰り返す間に減衰し
ていく。この結果逆方向に戻ることがあったとしてもそ
のレベルは非常に低下しているから、他の素子に与える
影響は格段に小さくなる。
That is, in the blocking portion, a pair of straight grooves extending in the traveling direction by alternately changing the inclination direction with respect to the traveling direction of the surface acoustic wave has a constant inclination with respect to the traveling direction of the surface acoustic wave. It is formed so as to be adjacent to each other in a saw-tooth shape so as to maintain an angle, and the inclination angle of the groove is 5 degrees or less with respect to the traveling direction of the surface acoustic wave. The surface acoustic wave traveling toward this groove repeats multiple reflection between the pair of grooves, and is attenuated while repeating this multiple reflection. As a result, even if it returns in the opposite direction, its level is extremely lowered, so that the influence on other elements is significantly reduced.

【0012】阻止部は、表面弾性波の進行方向に対する
傾斜方向を交互に変えて当該進行方向に伸延する一対の
表面弾性波素子側に凸である曲線の溝が前記表面弾性波
の進行方向に対してそれぞれ一定の傾斜形状を保つよう
に隣り合ってのこぎり刃状に類似した形状に連続して形
成されているものであって、さらに、前記溝の傾斜角の
最大値は前記表面弾性波の進行方向に対して5度以下と
されているものでは、この溝に向かって進行する表面弾
性波は前記の一対の溝との間で多重反射を繰り返すこと
になり、この多重反射を繰り返す間に減衰していく。こ
の結果逆方向に戻ることがあったとしてもそのレベルは
非常に低下しているから、他の素子に与える影響は格段
に小さくなる。
In the blocking portion, a curved groove convex toward the pair of surface acoustic wave elements extending in the traveling direction by alternately changing the inclination direction with respect to the traveling direction of the surface acoustic wave is formed in the traveling direction of the surface acoustic wave. On the other hand, it is formed continuously in a shape similar to a saw blade adjacent to each other so as to maintain a constant inclined shape, and further, the maximum value of the inclination angle of the groove is equal to that of the surface acoustic wave. If it is set to 5 degrees or less with respect to the traveling direction, the surface acoustic wave traveling toward this groove will repeat multiple reflection between the pair of grooves, and while repeating this multiple reflection. Decays. As a result, even if it returns in the opposite direction, its level is extremely lowered, so that the influence on other elements is significantly reduced.

【0013】[0013]

【実施例】以下、本発明を添付した図面を参照しながら
説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the accompanying drawings.

【0014】実施例1.図1は本発明にかかる高周波回
路素子の実施例1の上面図である。この高周波回路素子
は、シリコン基板1の一部に成膜された図示しない圧電
体薄膜に表面弾性波素子2が作成され、同じくシリコン
基板1の他の部分に成膜された図示しない半導体薄膜に
高周波増幅素子3が作成されている。高周波増幅素子3
は、シリコン基板1上に形成されてもよい。なお、表面
弾性波素子2を構成する入力用電極2Aと出力用電極2
Bとは圧電体薄膜上にフォトリソグラフィー等によって
形成される。これら入出力用電極2A、2Bは、圧電体
薄膜の下に、つまりシリコン基板1上に形成されてもよ
い。これらの入出力用電極2A、2Bで所定の周波数特
性を有するフィルタを構成している。入力用電極2Aと
出力用電極2Bとの間に位置して設けられている電極2
Cは、表面弾性波素子2の挿入損失を制御するための電
極であるが、この電極は、なくてもよい。表面弾性波素
子2において、入力用電極2Aから表面弾性波が発生し
て圧電体薄膜の中を出力用電極2Bへ向かって伝搬し、
出力用電極2Bで吸収される。しかし、出力用電極2B
での吸収は、完全でないため吸収し切れなかった表面弾
性波が、高周波増幅素子3へ向かって伝搬していく。本
発明の高周波回路素子の表面弾性波素子2と高周波増幅
素11との間には、この表面弾性波回路素子2からの表
面弾性波が増幅回路素子3に伝搬されないようにその伝
搬を阻止する阻止部としての溝4が設けてある。この溝
4は、その拡大図である図2に示されているように、表
面弾性波の進行方向に対してその傾斜方向を交互に変え
て当該進行方向に伸延し、表面弾性波の進行方向に対し
てそれぞれ一定の傾斜角を保つように隣り合ってのこぎ
り刃状に連続して形成されている。また、この溝4の表
面弾性波の進行方向に対する傾斜角は5度以下とされて
いる。この5度という数字は臨界的な意味を持つ数字で
はないが、これ以下の角度で設けておけば、表面弾性波
の遮断効果が高くなる。
Example 1. 1 is a top view of a first embodiment of a high frequency circuit device according to the present invention. In this high-frequency circuit element, a surface acoustic wave element 2 is formed on a piezoelectric thin film (not shown) formed on a part of a silicon substrate 1, and a semiconductor thin film (not shown) also formed on another part of the silicon substrate 1 is formed. The high frequency amplification element 3 is created. High frequency amplifier 3
May be formed on the silicon substrate 1. The input electrode 2A and the output electrode 2 that form the surface acoustic wave element 2
B is formed on the piezoelectric thin film by photolithography or the like. These input / output electrodes 2A and 2B may be formed under the piezoelectric thin film, that is, on the silicon substrate 1. These input / output electrodes 2A and 2B form a filter having a predetermined frequency characteristic. Electrode 2 provided between input electrode 2A and output electrode 2B
C is an electrode for controlling the insertion loss of the surface acoustic wave element 2, but this electrode may be omitted. In the surface acoustic wave element 2, a surface acoustic wave is generated from the input electrode 2A and propagates in the piezoelectric thin film toward the output electrode 2B,
It is absorbed by the output electrode 2B. However, the output electrode 2B
The surface acoustic wave that has not been completely absorbed because of the absorption is propagated toward the high frequency amplification element 3. Between the surface acoustic wave element 2 and the high frequency amplifier element 11 of the high frequency circuit element of the present invention, the propagation of the surface acoustic wave from the surface acoustic wave circuit element 2 is blocked so as not to propagate to the amplifier circuit element 3. A groove 4 is provided as a blocking portion. As shown in FIG. 2, which is an enlarged view of the groove 4, the groove 4 extends in the traveling direction of the surface acoustic wave by alternately changing its inclination direction with respect to the traveling direction of the surface acoustic wave. On the other hand, adjacent saw blades are continuously formed so as to maintain a constant inclination angle. Further, the inclination angle of the groove 4 with respect to the traveling direction of the surface acoustic wave is set to 5 degrees or less. The number of 5 degrees is not a number having a critical meaning, but if it is provided at an angle less than this, the effect of blocking surface acoustic waves becomes high.

【0015】つまり、図2に示すように溝4の傾斜角θ
を5度以下とすると、表面弾性波回路素子2から伝搬さ
れる表面弾性波は、傾斜方向が交互に異なる溝4との間
に引き込まれるように多重反射を繰り返し、この多重反
射を繰り返す間に増幅回路素子3に向かう表面弾性波は
非常に効率的に減衰されることになる。このように表面
弾性波が引き込まれるような角度を持って溝4を設ける
と、反射波が逆に戻ってくるようなことがないから、表
面弾性波を効果的に吸収することができるようになる。
That is, as shown in FIG. 2, the inclination angle θ of the groove 4 is
Is less than or equal to 5 degrees, the surface acoustic wave propagated from the surface acoustic wave circuit element 2 repeats multiple reflections so as to be drawn between the grooves 4 whose inclination directions are different from each other. The surface acoustic wave traveling toward the amplifier circuit element 3 will be attenuated very efficiently. If the groove 4 is provided at such an angle that the surface acoustic wave is drawn in, the reflected wave does not return in reverse, so that the surface acoustic wave can be effectively absorbed. Become.

【0016】実施例2.実施例では、溝4は、その拡大
図である図3に示されているように、表面弾性波の進行
方向に対する傾斜方向を交互に変えて当該進行方向に伸
延する一対の直線の溝が前記表面弾性波の進行方向に対
してそれぞれ一定の傾斜形状を保つように隣り合っての
こぎり刃状に類似した形状に連続して形成されている。
この溝4の表面弾性波の進行方向に対する傾斜角の最大
値は5度以下とされている。表面弾性波回路素子2から
伝搬される表面弾性波は、傾斜方向が交互に異なる溝4
との間に引き込まれるように多重反射を繰り返し、この
多重反射を繰り返す間に増幅回路素子3に向かう表面弾
性波は非常に効率的に減衰されることになる。また、表
面弾性波が溝4に挾まれた部分の奥にいけば行くほど逆
方向に戻りにくくなるので、さらに、反射波が逆に戻っ
てきにくくなるので、表面弾性波をより効果的に吸収す
ることができる。
Example 2. In the embodiment, as shown in FIG. 3, which is an enlarged view of the groove 4, a pair of linear grooves extending in the traveling direction by alternately changing the inclination direction with respect to the traveling direction of the surface acoustic wave is used. Adjacent saw blades are continuously formed in a shape similar to a saw blade so as to maintain a constant inclined shape with respect to the traveling direction of the surface acoustic wave.
The maximum value of the inclination angle of the groove 4 with respect to the traveling direction of the surface acoustic wave is 5 degrees or less. The surface acoustic wave propagated from the surface acoustic wave circuit element 2 has grooves 4 having different inclination directions alternately.
The multiple reflections are repeated so as to be drawn in between, and the surface acoustic waves toward the amplifier circuit element 3 are attenuated very efficiently while the multiple reflections are repeated. In addition, as the surface acoustic wave goes deeper in the part sandwiched by the groove 4, it becomes more difficult for the surface acoustic wave to return in the opposite direction. Therefore, the reflected wave becomes less likely to return in the opposite direction, so that the surface acoustic wave is absorbed more effectively. can do.

【0017】また、実施例1、実施例2においても、溝
4の断面形状は、図4に示すように四角形状、三角形
状、台形状などいずれの形状でも良く、その形状は製造
効率やコストなどを勘案して最適のものを選択すれば良
い。
Also in the first and second embodiments, the cross-sectional shape of the groove 4 may be any of a quadrangle, a triangle, a trapezoid, etc., as shown in FIG. It is sufficient to select the most suitable one in consideration of such factors.

【0018】[0018]

【発明の効果】以上の説明により明らかなように、本発
明によれば、表面弾性波素からの表面弾性波を吸収でき
るような角度で溝を設けたので、表面弾性波の他の素子
への影響を最少限に抑えることができ、半導体汚染の原
因となる吸収材を用いることなく表面弾性波の吸収が行
なえるようになる。
As is apparent from the above description, according to the present invention, the groove is provided at an angle capable of absorbing the surface acoustic wave from the surface acoustic wave element. Can be suppressed to a minimum, and surface acoustic waves can be absorbed without using an absorber that causes semiconductor contamination.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の高周波回路素子の構造を示す断面図で
ある。
FIG. 1 is a cross-sectional view showing the structure of a high-frequency circuit element of the present invention.

【図2】本発明の高周波回路素子に形成された溝の形状
を示す図である。
FIG. 2 is a diagram showing a shape of a groove formed in the high-frequency circuit element of the present invention.

【図3】本発明の高周波回路素子に形成された溝の他の
一例を示す図である。
FIG. 3 is a diagram showing another example of a groove formed in the high-frequency circuit element of the present invention.

【図4】図2に示した溝の断面形状の一例を示す図であ
る。
FIG. 4 is a diagram showing an example of a cross-sectional shape of the groove shown in FIG.

【符号の説明】[Explanation of symbols]

1…シリコン基板 2…表面弾性波素子 3…高周波増幅素子 4…溝 1 ... Silicon substrate 2 ... Surface acoustic wave element 3 ... High frequency amplification element 4 ... Groove

─────────────────────────────────────────────────────
─────────────────────────────────────────────────── ───

【手続補正書】[Procedure amendment]

【提出日】平成5年6月11日[Submission date] June 11, 1993

【手続補正1】[Procedure Amendment 1]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0012[Correction target item name] 0012

【補正方法】変更[Correction method] Change

【補正内容】[Correction content]

【0012】阻止部、表面弾性波の進行方向に対する
傾斜方向を交互に変えて当該進行方向に伸延する一対の
表面弾性波素子側に凸である曲線の溝が前記表面弾性波
の進行方向に対してそれぞれ一定の傾斜形状を保つよう
に隣り合ってのこぎり刃状に類似した形状に連続して形
成されているものであって、さらに、前記溝の傾斜角の
最大値は前記表面弾性波の進行方向に対して5度以下と
されているものでは、−の溝に向かって進行する表面弾
性波は前記の一対の溝との間で多重反射を繰り返すこと
になり、この多重反射を繰り返す間に減衰していく。
らに、表面弾性波が前記一対の溝の奥に行けば行くほど
逆方向に戻りにくくなるので、逆方向に戻ることがあっ
たとしてもそのレベルはさらに低下しているから、他の
素子に与える影響はさらに小さくなる。
The blocking portion has a curved groove convex toward the pair of surface acoustic wave elements extending in the traveling direction by alternately changing the inclination direction with respect to the traveling direction of the surface acoustic wave. On the other hand, it is formed continuously in a shape similar to a saw blade adjacent to each other so as to maintain a constant inclined shape, and further, the maximum value of the inclination angle of the groove is equal to that of the surface acoustic wave. In the case where the angle is set to 5 degrees or less with respect to the traveling direction, the surface acoustic wave traveling toward the − groove is repeatedly reflected multiple times between the pair of grooves, and while the multiple reflection is repeated, Decays to. It
In addition, the deeper the surface acoustic wave goes into the pair of grooves, the more
Since hardly back in the opposite direction, because also the levels when there is a return in the opposite direction is reduced in further, the effect on the other elements smaller in further.

【手続補正2】[Procedure Amendment 2]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0016[Correction target item name] 0016

【補正方法】変更[Correction method] Change

【補正内容】[Correction content]

【0016】実施例2.実施例では、溝4は、その拡大
図である図3に示されているように、表面弾性波の進行
方向に対する傾斜方向を交互に変えて当該進行方向に伸
延する一対の線の溝が前記表面弾性波の進行方向に対
してそれぞれ一定の傾斜形状を保つように隣り合っての
こぎり刃状に類似した形状に連続して形成されている。
この溝4の表面弾性波の進行方向に対する傾斜角の最大
値は5度以下とされている。表面弾性波回路素子2から
伝搬される表面弾性波は、傾斜方向が交互に異なる溝4
との間に引き込まれるように多重反射を繰り返し、この
多重反射を繰り返す間に増幅回路素子3に向かう表面弾
性波は非常に効率的に減衰されることになる。また、表
面弾性波が溝4に挾まれた部分の奥にいけば行くほど逆
方向に戻りにくくなるので、さらに、反射波が逆に戻っ
てきにくくなるので、表面弾性波をより効果的に吸収す
ることができる。
Example 2. In an embodiment, the grooves 4, as shown in FIG. 3 is an enlarged view thereof, the grooves of the pair of curve which extends in the traveling direction by changing the inclination direction with respect to the traveling direction of the surface acoustic wave alternating Adjacent saw blades are continuously formed in a shape similar to a saw blade so as to maintain a constant inclined shape with respect to the traveling direction of the surface acoustic wave.
The maximum value of the inclination angle of the groove 4 with respect to the traveling direction of the surface acoustic wave is 5 degrees or less. The surface acoustic wave propagated from the surface acoustic wave circuit element 2 has grooves 4 having different inclination directions alternately.
The multiple reflections are repeated so as to be drawn in between, and the surface acoustic waves toward the amplifier circuit element 3 are attenuated very efficiently while the multiple reflections are repeated. Further, as the surface acoustic wave goes deeper in the portion sandwiched by the groove 4, it becomes more difficult for the surface acoustic wave to return in the opposite direction, so that the reflected wave becomes less likely to return in the opposite direction, so that the surface acoustic wave is absorbed more effectively. can do.

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】同一基板上に少なくとも1つの表面弾性波
素子を含む複合素子が形成され、当該基板上には当該表
面弾性波素子以外の他の素子への表面弾性波の伝搬を阻
止する阻止部が形成された高周波回路素子であって、 当該阻止部は、前記表面弾性波の進行方向に対する傾斜
方向を交互に変えて当該進行方向に伸延する一対の直線
の溝が前記表面弾性波の進行方向に対して,それぞれ一
定の傾斜角を保つように隣り合って,のこぎり刃に類似
した形状に連続して形成されたものであり、かつ前記溝
の傾斜角の最大値は前記表面弾性波の進行方向に対して
5度以下とされていることを特徴とする高周波回路素
子。
1. A composite element including at least one surface acoustic wave element formed on the same substrate, and a blocking element for preventing propagation of surface acoustic wave to other elements other than the surface acoustic wave element on the substrate. In the high-frequency circuit element in which a portion is formed, the blocking portion has a pair of straight grooves extending in the traveling direction by alternately changing the inclination direction with respect to the traveling direction of the surface acoustic wave. The grooves are adjacent to each other so as to maintain a constant inclination angle with respect to the direction, and are continuously formed in a shape similar to a saw blade, and the maximum value of the inclination angle of the groove is the same as that of the surface acoustic wave. A high-frequency circuit element characterized in that the angle is 5 degrees or less with respect to the traveling direction.
【請求項2】阻止部が、表面弾性波の進行方向に対する
傾斜方向を交互に変えて当該進行方向に伸延する一対の
表面弾性波素子側に凸である曲線の溝が前記表面弾性波
の進行方向に対してそれぞれ一定の傾斜形状を保つよう
に隣り合って、のこぎり刃に類似した形状に連続して形
成されたものであり、かつ、前記溝の傾斜角の最大値
は、前期表面弾性波の進行方向に対して5度以下とされ
ていることを特徴とする請求項1記載の高周波回路素
子。
2. The blocking portion has a curved groove convex toward the pair of surface acoustic wave elements extending in the traveling direction by alternately changing the inclination direction with respect to the traveling direction of the surface acoustic wave. Adjacent to each other so as to maintain a constant inclined shape with respect to the direction, and continuously formed in a shape similar to a saw blade, and the maximum value of the inclination angle of the groove is The high frequency circuit element according to claim 1, wherein the high frequency circuit element is set at 5 degrees or less with respect to the traveling direction.
JP5086299A 1993-04-13 1993-04-13 High frequency circuit element Withdrawn JPH06303088A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5086299A JPH06303088A (en) 1993-04-13 1993-04-13 High frequency circuit element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5086299A JPH06303088A (en) 1993-04-13 1993-04-13 High frequency circuit element

Publications (1)

Publication Number Publication Date
JPH06303088A true JPH06303088A (en) 1994-10-28

Family

ID=13882962

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5086299A Withdrawn JPH06303088A (en) 1993-04-13 1993-04-13 High frequency circuit element

Country Status (1)

Country Link
JP (1) JPH06303088A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006524016A (en) * 2003-03-03 2006-10-19 クリー インコーポレイテッド Nitride-based integrated acoustic wave device and method for manufacturing nitride-based integrated acoustic wave device
US7898047B2 (en) 2003-03-03 2011-03-01 Samsung Electronics Co., Ltd. Integrated nitride and silicon carbide-based devices and methods of fabricating integrated nitride-based devices

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006524016A (en) * 2003-03-03 2006-10-19 クリー インコーポレイテッド Nitride-based integrated acoustic wave device and method for manufacturing nitride-based integrated acoustic wave device
US7875910B2 (en) 2003-03-03 2011-01-25 Cree, Inc. Integrated nitride and silicon carbide-based devices
US7898047B2 (en) 2003-03-03 2011-03-01 Samsung Electronics Co., Ltd. Integrated nitride and silicon carbide-based devices and methods of fabricating integrated nitride-based devices
US8035111B2 (en) 2003-03-03 2011-10-11 Cree, Inc. Integrated nitride and silicon carbide-based devices
US8502235B2 (en) 2003-03-03 2013-08-06 Cree, Inc. Integrated nitride and silicon carbide-based devices

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