JPH06275683A - Tab tape - Google Patents

Tab tape

Info

Publication number
JPH06275683A
JPH06275683A JP6497293A JP6497293A JPH06275683A JP H06275683 A JPH06275683 A JP H06275683A JP 6497293 A JP6497293 A JP 6497293A JP 6497293 A JP6497293 A JP 6497293A JP H06275683 A JPH06275683 A JP H06275683A
Authority
JP
Japan
Prior art keywords
insulating film
tab tape
embossing
embosses
side edges
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP6497293A
Other languages
Japanese (ja)
Inventor
Kiyoko Hidekuma
聖子 秀熊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Semiconductor Manufacturing Co Ltd
Kansai Nippon Electric Co Ltd
Original Assignee
Renesas Semiconductor Manufacturing Co Ltd
Kansai Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Semiconductor Manufacturing Co Ltd, Kansai Nippon Electric Co Ltd filed Critical Renesas Semiconductor Manufacturing Co Ltd
Priority to JP6497293A priority Critical patent/JPH06275683A/en
Publication of JPH06275683A publication Critical patent/JPH06275683A/en
Withdrawn legal-status Critical Current

Links

Abstract

PURPOSE:To hold reliably the interval between insulating films, on which both of overlapped first embosses are respectively formed, even if the first embosses are overlapped with each other in the overlapping fellow insulating films. CONSTITUTION:A multitude of through holes 13 are bored in an insulating film 12 of a continuous length at a constant pitch and inner leads 14 formed by making a conductive pattern provide extendedly in each through hole 13 and a semiconductor pellet 15 arranged in each through hole 13 are electrically connected to each other by thermal pressure bonding. In a TAB tape 11 made to arranged with first embosses 18 at a fine pitch along both side edges of the film 12, second embosses 19 are formed on the regions (a) of both side edges, where each through hole 13 is positioned, of the film 12 separately from the embosses 18.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明はTABテープに関し、詳
しくは、TAB式半導体装置の製造に使用され、長尺な
絶縁フィルムに穿設した透孔に多数の半導体ペレットを
定ピッチで配置したTABテープに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a TAB tape, and more particularly, it is used for manufacturing a TAB type semiconductor device and has a long insulating film formed with a large number of semiconductor pellets arranged at a constant pitch. Regarding tape.

【0002】[0002]

【従来の技術】例えば、TAB IC等のTAB式半導
体装置は、長尺なTABテープから製造されるのが一般
的である。
2. Description of the Related Art For example, a TAB type semiconductor device such as a TAB IC is generally manufactured from a long TAB tape.

【0003】このTABテープ(1)は、図8及び図9
に示すように長尺な絶縁フィルム(2)に定ピッチ〔比
較的大きなピッチ〕に多数の透孔(3)を穿設し、絶縁
フィルム(2)上に被着した導電パターンを透孔(3)内
に延在させたインナリード(4)の先端と、その透孔
(3)内に配置した半導体ペレット(5)のバンプ電極
(6)とを熱圧着により電気的に接続した構造を有す
る。また、上記絶縁フィルム(2)の長手方向に沿う両
側縁には、搬送用の送り穴(7)が定ピッチで穿設され
ていると共に、その送り穴(7)の外側で絶縁フィルム
(2)の両側縁に沿って微小ピッチでエンボス(8)〔以
下第1のエンボスと称す〕が配列されている。
This TAB tape (1) is shown in FIG. 8 and FIG.
As shown in Fig. 4, a large number of through holes (3) are formed in the long insulating film (2) at a constant pitch (relatively large pitch), and the conductive pattern adhered onto the insulating film (2) is formed through holes ( 3) A structure in which the tip of the inner lead (4) extending in the inside and the bump electrode (6) of the semiconductor pellet (5) arranged in the through hole (3) are electrically connected by thermocompression bonding. Have. Further, feeding holes (7) for transportation are formed at a constant pitch on both side edges along the longitudinal direction of the insulating film (2), and the insulating film (2) is provided outside the feeding holes (7). ), Embossing (8) [hereinafter referred to as first embossing] is arranged at a minute pitch.

【0004】尚、上記TABテープ(1)では、インナ
リード(4)の先端と半導体ペレット(5)のエッジ部分
とが外部衝撃などにより接触してショート不良が発生す
ることを未然に防止する目的で、インナリード(4)を
図示のごとくフォーミングすることにより、そのインナ
リード(4)の先端と半導体ペレット(5)のエッジ部分
とを離隔させるようにしている。その結果、半導体ペレ
ット(5)がインナリード(4)の反対側に絶縁フィルム
(2)よりも突出した状態となっている。
The purpose of the TAB tape (1) is to prevent a short circuit from occurring due to contact between the tip of the inner lead (4) and the edge of the semiconductor pellet (5) due to external impact. Then, the inner lead (4) is formed as shown in the drawing so that the tip of the inner lead (4) and the edge portion of the semiconductor pellet (5) are separated from each other. As a result, the semiconductor pellet (5) is in a state of protruding from the insulating film (2) on the opposite side of the inner lead (4).

【0005】この種の半導体装置の製造では、長尺なT
ABテープ(1)を取り扱う上で、図10及び図11に
示すようにそのTABテープ(1)をリール等に巻き取
った状態で保管並びに出荷されるのが通常で、その際、
上述したように半導体ペレット(5)が絶縁フィルム
(2)よりも突出した状態となっているため、巻き取っ
た絶縁フィルム(2)同士の間で、半導体ペレット(5)
が重なり合う絶縁フィルム(2)に当接してリード変形
などが発生することになる。
In the manufacture of this type of semiconductor device, a long T
When handling the AB tape (1), it is usual to store and ship the TAB tape (1) wound on a reel or the like as shown in FIGS.
As described above, since the semiconductor pellets (5) are in a state of projecting more than the insulating film (2), the semiconductor pellets (5) are wound between the wound insulating films (2).
The lead will be deformed by coming into contact with the overlapping insulating films (2).

【0006】そこで、この不具合を解消するため、上述
した第1のエンボス(8)が機能する。即ち、この第1
のエンボス(8)は、半導体ペレット(5)の絶縁フィル
ム(2)からの突出寸法よりも大きな突出寸法を有する
ので、リール等に巻き取った状態にある絶縁フィルム
(2)間で第1のエンボス(8)がスペーサとして機能
し、絶縁フィルム(2)同士の間隔を、半導体ペレット
(5)が当接しないように保持している。
Then, in order to solve this problem, the above-mentioned first embossing (8) functions. That is, this first
Since the embossing (8) of the semiconductor pellet (5) has a protruding dimension larger than that of the insulating film (2) of the semiconductor pellet (5), the embossing (8) of the The embossing (8) functions as a spacer and holds the space between the insulating films (2) so that the semiconductor pellets (5) do not abut.

【0007】[0007]

【発明が解決しようとする課題】ところで、TABテー
プ(1)をリール等に巻き取った状態では、重なり合う
絶縁フィルム(2)同士間で第1のエンボス(8)がスペ
ーサとして機能し、両者の間隔を保持することにより、
半導体ペレット(5)が重なり合う絶縁フィルム(2)に
当接してリード変形を未然に防止している。
By the way, when the TAB tape (1) is wound on a reel or the like, the first embossment (8) functions as a spacer between the insulating films (2) which are overlapped with each other. By keeping the spacing,
The semiconductor pellets (5) come into contact with the overlapping insulating films (2) to prevent lead deformation.

【0008】しかしながら、特にTABテープ(1)を
多数回巻き取った場合など、第1のエンボス(8)が比
較的微小ピッチで配列しているため、重なり合う絶縁フ
ィルム(2)同士で第1のエンボス(8)が一致した位置
となって重なることがある。このように第1のエンボス
(8)同士が上下で重なると、絶縁フィルム(2)の間隔
を保持できなくなり、半導体ペレット(5)が絶縁フィ
ルム(2)に当接し、リード変形が発生する。特に、半
導体ペレット(5)が位置する両側縁にある第1のエン
ボス(8)が重なった場合にはそのリード変形が確実に
生じるという問題があった。
However, especially when the TAB tape (1) is wound many times, the first embossments (8) are arranged at a comparatively small pitch, so that the insulating films (2) that overlap each other form the first embossment (8). The embossing (8) may be aligned and overlap. When the first embossments (8) are vertically overlapped with each other in this way, the distance between the insulating films (2) cannot be maintained, the semiconductor pellet (5) contacts the insulating film (2), and lead deformation occurs. In particular, when the first embossments (8) on both side edges where the semiconductor pellet (5) is located overlaps, there is a problem that the lead deformation is surely caused.

【0009】そこで、本発明は上記問題点に鑑みて提案
されたもので、その目的とするところは、重なり合う絶
縁フィルム同士で第1のエンボスが重なっても、両者の
絶縁フィルムの間隔を確実に保持し得るTABテープを
提供することにある。
Therefore, the present invention has been proposed in view of the above problems, and an object of the present invention is to ensure the distance between both insulating films even if the first embosses overlap each other. It is to provide a TAB tape that can be held.

【0010】[0010]

【課題を解決するための手段】上記目的を達成するため
の技術的手段として、本発明は、長尺な絶縁フィルムに
定ピッチで多数の透孔を穿設し、各透孔内に導電パター
ンを延在させて形成したインナリードと、透孔内に配置
した半導体ペレットとを熱圧着により電気的に接続し、
上記絶縁フィルムの両側縁に沿って微小ピッチで第1の
エンボスを配列させたTABテープにおいて、上記絶縁
フィルムの透孔が位置する両側縁の領域に第2のエンボ
スを形成したことを特徴とする。
As a technical means for achieving the above object, the present invention is to form a large number of through holes at a constant pitch in a long insulating film and to form a conductive pattern in each through hole. Inner leads formed by extending the, and the semiconductor pellets arranged in the through holes are electrically connected by thermocompression bonding,
In the TAB tape in which the first embossments are arranged along the both side edges of the insulating film at a fine pitch, the second emboss is formed in the regions of the both side edges where the through holes of the insulating film are located. .

【0011】尚、上記第2のエンボスは方向性のある形
状であり、その第2のエンボスの方向を所定のピッチで
異ならせるように配置したり、或いは、絶縁フィルムの
長手方向に沿ってその幅方向位置を異ならせるように配
置することが望ましい。
The second embossing has a directional shape, and the second embossing is arranged so that the direction of the second embossing is different at a predetermined pitch, or the second embossing is arranged along the longitudinal direction of the insulating film. It is desirable to arrange so that the position in the width direction is different.

【0012】[0012]

【作用】本発明に係るTABテープでは、絶縁フィルム
の透孔が位置する両側縁の領域に、第1のエンボスとは
別に第2のエンボスを形成したことにより、TABテー
プを巻き取った場合、重なり合う絶縁フィルム同士間
で、第1のエンボスが重なった場合でも、第2のエンボ
スが重なり合う絶縁フィルムの間隔を確実に保持し得る
スペーサとして機能する。
In the TAB tape according to the present invention, when the TAB tape is wound by forming the second embossing separately from the first embossing in the regions of both side edges where the through holes of the insulating film are located, Even when the first embosses are overlapped between the overlapping insulating films, the second embossing functions as a spacer that can reliably maintain the distance between the overlapping insulating films.

【0013】[0013]

【実施例】本発明に係るTABテープの実施例を図1乃
至図7に示して説明する。
EXAMPLE An example of the TAB tape according to the present invention will be described with reference to FIGS.

【0014】本発明のTABテープ(11)は、従来と同
様、図1及び図2に示すように長尺な絶縁フィルム(1
2)に定ピッチ〔比較的大きなピッチ〕に多数の透孔(1
3)を穿設し、絶縁フィルム(12)上に被着した導電パ
ターンを透孔(13)内に延在させたインナリード(14)
の先端と、その透孔(13)内に配置した半導体ペレット
(15)のバンプ電極(16)とを熱圧着により電気的に接
続した構造を有し、インナリード(14)の先端と半導体
ペレット(15)のエッジ部分とが外部衝撃などにより接
触してショート不良が発生することを未然に防止する目
的で、図示のごときインナリード(14)のフォーミング
により、そのインナリード(14)の先端と半導体ペレッ
ト(15)のエッジ部分とを離隔させ、半導体ペレット
(15)がインナリード(14)の反対側に絶縁フィルム
(12)よりも突出した状態としている。尚、上記絶縁フ
ィルム(12)の長手方向に沿う両側縁には、搬送用の送
り穴(17)が定ピッチで穿設され、その送り穴(17)の
外側で絶縁フィルム(12)の両側縁に沿って微小ピッチ
で第1のエンボス(18)が配列されている。
The TAB tape (11) of the present invention has a long insulating film (1) as shown in FIGS.
2) A large number of through holes (1
Inner leads (14) in which the conductive pattern adhered on the insulating film (12) is extended into the through holes (13) by drilling 3).
Has a structure in which the tip of the inner lead (14) and the bump electrode (16) of the semiconductor pellet (15) arranged in the through hole (13) are electrically connected by thermocompression bonding. For the purpose of preventing the occurrence of a short circuit failure due to contact with the edge part of (15) due to external impact or the like, by forming the inner lead (14) as shown in the figure, the tip of the inner lead (14) is The edge portion of the semiconductor pellet (15) is separated from the edge portion of the semiconductor pellet (15) so that the semiconductor pellet (15) projects to the opposite side of the inner lead (14) from the insulating film (12). It should be noted that feed holes (17) for transport are formed at a constant pitch on both side edges along the longitudinal direction of the insulating film (12), and both sides of the insulating film (12) are outside the feed holes (17). The first embossments (18) are arranged along the edge at a fine pitch.

【0015】本発明の特徴とするところは、このTAB
テープ(11)で、絶縁フィルム(12)の少なくとも透孔
(13)が位置する両側縁の領域(a)に第2のエンボス
(19)を形成したことにある。この第2のエンボス(1
9)は、第1のエンボス(18)の内側位置に設けられ、
半導体ペレット(15)が突出するのと反対側、即ち、第
1のエンボス(18)と同一方向に突出するように形成さ
れ、その突出寸法が、絶縁フィルム(12)の表面から半
導体ペレット(15)が突出する寸法よりも大きくなるよ
うに設定される。
The feature of the present invention lies in this TAB.
The second embossment (19) is formed on the tape (11) at least in the regions (a) on both side edges of the insulating film (12) where the through holes (13) are located. This second emboss (1
9) is provided inside the first embossing (18),
The semiconductor pellet (15) is formed so as to protrude on the side opposite to that on which the semiconductor pellet (15) protrudes, that is, in the same direction as the first embossing (18). ) Is set to be larger than the protruding size.

【0016】このTABテープ(11)を保管並びに出荷
するに際してリール等に巻き取る場合、巻き取ったTA
Bテープ(11)では、図3に示すように絶縁フィルム
(12)の第1及び第2のエンボス(18)(19)が、重な
り合う絶縁フィルム(12)の表面に当接することにより
スペーサとして機能し、重なり合う絶縁フィルム(12)
同士の間隔を、半導体ペレット(15)が当接しないよう
に保持する。
When the TAB tape (11) is wound on a reel or the like for storage and shipping, the TA
In the B tape (11), the first and second embossments (18) and (19) of the insulating film (12) function as spacers by contacting the surfaces of the overlapping insulating films (12) as shown in FIG. Insulating and overlapping insulation films (12)
The distance between them is maintained so that the semiconductor pellets (15) do not come into contact with each other.

【0017】そして、前述したように、特にTABテー
プ(11)を多数回巻き取った場合など、第1のエンボス
(18)が比較的微小ピッチで配列しているため、重なり
合う絶縁フィルム(12)同士で第1のエンボス(18)が
一致した位置となって重なっても、第1のエンボス(1
8)とは別に第2のエンボス(19)を形成したことによ
り、その第2のエンボス(19)が重なり合う絶縁フィル
ム(12)の間隔を確実に保持し得るスペーサとして機能
する。
As described above, since the first embossments (18) are arranged at a relatively fine pitch, especially when the TAB tape (11) is wound many times, the insulating films (12) that overlap each other are formed. Even if the first embossing (18) overlaps with each other at the same position, the first embossing (1
By forming the second embossment (19) in addition to 8), the second embossment (19) functions as a spacer that can reliably hold the interval between the insulating films (12) that overlap each other.

【0018】ここで、第2のエンボス(19)を絶縁フィ
ルム(12)の透孔(13)が位置する両側縁の領域(a)
に形成したことにより、その第2のエンボス(19)が位
置する領域(a)にある半導体ペレット(15)が比較的
大きなピッチで配置されているため、重なり合う絶縁フ
ィルム(12)で第2のエンボス(19)同士が重なること
はない。
Here, the second embossment (19) is formed on both side edge regions (a) where the through holes (13) of the insulating film (12) are located.
Since the semiconductor pellets (15) in the region (a) in which the second embossment (19) is located are arranged at a relatively large pitch, the second insulating film (12) is formed in the overlapping insulating film (12). The embossments (19) do not overlap each other.

【0019】即ち、リール等へのTABテープ(11)の
巻き初めからm番目にある半導体ペレット(15)に達す
るまでM回転させたとした場合、n番目〔n>m〕にあ
る半導体ペレット(15)が、重なり合う絶縁フィルム
(12)で両者の半導体ペレット(15)が重なるとすれ
ば、そのn番目の半導体ペレット(15)に達するまで
[M+1]回転となる。従って、n番目の半導体ペレッ
ト(15)に達するまでに巻き取られた絶縁フィルム(1
2)の長さと、m番目の半導体ペレット(15)に達する
までに巻き取られた絶縁フィルム(12)の長さとの差
を、絶縁フィルム(12)での半導体ペレット(15)のピ
ッチ間隔で除算した値が整数となれば、両者の半導体ペ
レット(15)は重なり合うことになる。
That is, when M rotations are performed from the beginning of winding the TAB tape (11) around the reel to the m-th semiconductor pellet (15), the n-th [n> m] semiconductor pellet (15) ), If the two semiconductor pellets (15) are overlapped by the overlapping insulating films (12), the rotation is [M + 1] until the n-th semiconductor pellet (15) is reached. Therefore, the insulating film (1) wound up before reaching the n-th semiconductor pellet (15)
The difference between the length of 2) and the length of the insulating film (12) wound up to reach the m-th semiconductor pellet (15) is determined by the pitch interval of the semiconductor pellet (15) in the insulating film (12). If the divided value is an integer, both semiconductor pellets (15) will overlap.

【0020】そこで、その除算値が整数とならないよう
に、半導体ペレット(15)のピッチ間隔、第2のエンボ
ス(19)の突出高さやリールの巻き芯径などの諸条件を
適正値に設定する。このように上記除算値が整数となら
なければ、半導体ペレット(15)は常に重なることはな
く、半導体ペレット(15)が重ならなければ、第2のエ
ンボス(19)も重なることはない。
Therefore, various conditions such as the pitch interval of the semiconductor pellets (15), the protruding height of the second embossment (19) and the winding core diameter of the reel are set to appropriate values so that the divided value is not an integer. . Thus, if the divided value is not an integer, the semiconductor pellets (15) do not always overlap, and if the semiconductor pellets (15) do not overlap, the second embossments (19) do not overlap.

【0021】尚、上記実施例では、第2のエンボス(1
9)を円形状とし、絶縁フィルム(12)の幅方向で同一
位置に設けた場合について説明したが、本発明はこれに
限定されることなく、第2のエンボス(19')を方向性
のある形状、例えば、図4及び図5に示すように楕円形
状とし、所定のパターンで第2のエンボス(19')の方
向が相互に異なるように配設する。また、他の手段とし
ては、例えば、図6及び図7に示すように第2のエンボ
ス(19'')を、絶縁フィルム(12)の長手方向に沿って
その幅方向位置を異ならせるように配置してもよい。
In the above embodiment, the second embossing (1
The case where 9) has a circular shape and is provided at the same position in the width direction of the insulating film (12) has been described. A certain shape, for example, an elliptical shape as shown in FIGS. 4 and 5, is arranged so that the directions of the second embossments (19 ′) are different from each other in a predetermined pattern. Further, as another means, for example, as shown in FIGS. 6 and 7, the second embossment (19 ″) may be varied in its width direction position along the longitudinal direction of the insulating film (12). You may arrange.

【0022】[0022]

【発明の効果】本発明によれば、絶縁フィルムの透孔が
位置する両側縁の領域に第1のエンボスとは別に第2の
エンボスを形成したことにより、TABテープを巻き取
った場合、重なり合う絶縁フィルム同士間で第1のエン
ボスが重なっても、第2のエンボスが、重なり合う絶縁
フィルムの間隔を確実に保持し得るスペーサとして機能
するので、リード変形などの不具合が未然に防止でき
て、信頼性が大幅に向上する。
According to the present invention, since the second embossing is formed in addition to the first embossing in the regions of both side edges where the through holes of the insulating film are located, when the TAB tapes are wound, they overlap each other. Even if the first embossing overlaps between the insulating films, the second embossing functions as a spacer that can reliably hold the distance between the overlapping insulating films, so that defects such as lead deformation can be prevented, and reliability is improved. Significantly improved.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明に係るTABテープの一実施例を示す部
分平面図
FIG. 1 is a partial plan view showing an embodiment of a TAB tape according to the present invention.

【図2】図1のTABテープの断面図FIG. 2 is a sectional view of the TAB tape shown in FIG.

【図3】図2のTABテープをリール等に巻き取って重
なり合った状態を示す断面図
3 is a cross-sectional view showing a state in which the TAB tape shown in FIG. 2 is wound around a reel or the like and overlapped with each other.

【図4】本発明のTABテープでエンボスを長円形状と
した場合を示す部分平面図
FIG. 4 is a partial plan view showing a case where the TAB tape of the present invention has an oval embossing shape.

【図5】図4のTABテープの断面図5 is a cross-sectional view of the TAB tape of FIG.

【図6】本発明のTABテープでエンボスの位置を異な
らせた場合を示す部分平面図
FIG. 6 is a partial plan view showing a case where embossed positions are changed in the TAB tape of the present invention.

【図7】図6のTABテープの断面図7 is a sectional view of the TAB tape of FIG.

【図8】TABテープの従来例を示す部分平面図FIG. 8 is a partial plan view showing a conventional example of a TAB tape.

【図9】図8のTABテープの断面図9 is a cross-sectional view of the TAB tape of FIG.

【図10】従来のTABテープをリール等に巻き取った
状態を示す模式図
FIG. 10 is a schematic diagram showing a state in which a conventional TAB tape is wound around a reel or the like.

【図11】従来のTABテープを層間テープと共にリー
ル等に巻き取って重なり合った状態を示す断面図
FIG. 11 is a cross-sectional view showing a state in which a conventional TAB tape is wound together with an interlayer tape on a reel or the like and overlapped.

【符号の説明】[Explanation of symbols]

11 TABテープ 12 絶縁フィルム 13 透孔 14 インナリード 15 半導体ペレット 18 第1のエンボス 19 第2のエンボス 11 TAB tape 12 Insulating film 13 Through hole 14 Inner lead 15 Semiconductor pellet 18 First embossing 19 Second embossing

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 長尺な絶縁フィルムに定ピッチで多数の
透孔を穿設し、各透孔内に導電パターンを延在させて形
成したインナリードと、透孔内に配置した半導体ペレッ
トとを熱圧着により電気的に接続し、上記絶縁フィルム
の両側縁に沿って微小ピッチで第1のエンボスを配列さ
せたTABテープにおいて、上記絶縁フィルムの透孔が
位置する両側縁の領域に第2のエンボスを形成したこと
を特徴とするTABテープ。
1. An inner lead formed by forming a large number of through holes in a long insulating film at a constant pitch, and extending a conductive pattern in each through hole, and a semiconductor pellet arranged in the through hole. In the TAB tape in which the first embossments are arranged along the both side edges of the insulating film at a fine pitch along the two side edges of the insulating film. The TAB tape is characterized in that the embossing is formed.
【請求項2】 請求項1記載の第2のエンボスが方向性
のある形状であり、その第2のエンボスの方向を所定の
ピッチで異ならせたことを特徴とするTABテープ。
2. The TAB tape according to claim 1, wherein the second embossing has a directional shape, and the direction of the second embossing is different at a predetermined pitch.
【請求項3】 請求項1記載の第2のエンボスが絶縁フ
ィルムの長手方向に沿ってその幅方向位置を異ならせた
ことを特徴とするTABテープ。
3. A TAB tape, wherein the second embossment according to claim 1 has different positions in the width direction along the longitudinal direction of the insulating film.
JP6497293A 1993-03-24 1993-03-24 Tab tape Withdrawn JPH06275683A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6497293A JPH06275683A (en) 1993-03-24 1993-03-24 Tab tape

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6497293A JPH06275683A (en) 1993-03-24 1993-03-24 Tab tape

Publications (1)

Publication Number Publication Date
JPH06275683A true JPH06275683A (en) 1994-09-30

Family

ID=13273478

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6497293A Withdrawn JPH06275683A (en) 1993-03-24 1993-03-24 Tab tape

Country Status (1)

Country Link
JP (1) JPH06275683A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007273628A (en) * 2006-03-30 2007-10-18 Fujitsu Ltd Manufacturing method for semiconductor device
JP2009130268A (en) * 2007-11-27 2009-06-11 Sumitomo Metal Mining Co Ltd Emboss spacer and method of manufacturing the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007273628A (en) * 2006-03-30 2007-10-18 Fujitsu Ltd Manufacturing method for semiconductor device
JP2009130268A (en) * 2007-11-27 2009-06-11 Sumitomo Metal Mining Co Ltd Emboss spacer and method of manufacturing the same

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