JPH06268445A - Frequency modulator - Google Patents

Frequency modulator

Info

Publication number
JPH06268445A
JPH06268445A JP5052626A JP5262693A JPH06268445A JP H06268445 A JPH06268445 A JP H06268445A JP 5052626 A JP5052626 A JP 5052626A JP 5262693 A JP5262693 A JP 5262693A JP H06268445 A JPH06268445 A JP H06268445A
Authority
JP
Japan
Prior art keywords
frequency
diode
resonator
dielectric
dielectric line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5052626A
Other languages
Japanese (ja)
Other versions
JP3086883B2 (en
Inventor
Hiroyuki Ishizaka
宏幸 石坂
Tsutomu Yoneyama
米山  務
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hino Motors Ltd
Original Assignee
Hino Motors Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hino Motors Ltd filed Critical Hino Motors Ltd
Priority to JP05052626A priority Critical patent/JP3086883B2/en
Publication of JPH06268445A publication Critical patent/JPH06268445A/en
Application granted granted Critical
Publication of JP3086883B2 publication Critical patent/JP3086883B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)

Abstract

PURPOSE:To obtain a milliwave band frequency modulator which can be mounted on an automobile by providing a dielectric resonator so as to be adjacent to a varactor diode, and a modulation circuit which impresses a modulation signal to the electrode of the varactor diode. CONSTITUTION:The arbitrary oscillation frequency of 50-70GHz can be obtained by a Gunn diode 3 and a metallic strip resonator 5, and the output of an oscillator 22 is transmitted to a non-radiative dielectric line 7. This device is equipped with a modulation circuit 20, and a variable capacity diode 1 which is mounted on the dielectric line 7 and arranged along the dielectric line 7 in a non-contact state while a dielectric resonator 9 is made adjacent to it. The variable capacity diode 1 is an element whose electrostatic capacity is changed according to a voltage, and the resonance frequency of the resonator influence. Thus, the milliwave band frequency modulator frequency being the output of the oscillator 22 transmitted to the dielectric line 7 is changed and modulated under the influence. Thus, the milliwave band frequency modulator which can be mounted on the automobile can be obtained with a simple constitution.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明はミリ波領域の周波数変調
信号の発生に利用する。本発明は自動車に装備される接
近警報装置、衝突防止装置、その他電磁波によるレーダ
に利用するために開発されたものであるが、この他の装
置にも利用することができる。
BACKGROUND OF THE INVENTION The present invention is used to generate a frequency modulation signal in the millimeter wave region. The present invention was developed for use in a proximity warning device, a collision prevention device, and other radars that use electromagnetic waves, which are installed in automobiles, but can also be used in other devices.

【0002】[0002]

【従来の技術】きわめて高い周波数の電磁波を利用した
レーダ装置により、先行車両との接近警報装置、接近す
る物体を警報する衝突防止装置、その他を自動車に装備
することが試みられている。近年、自動車用のレーダ装
置としては60GHz帯の電波割当が行われることが計
画されている。
2. Description of the Related Art It has been attempted to equip a vehicle with a proximity warning device for a preceding vehicle, a collision prevention device for warning an approaching object, and the like by a radar device utilizing an electromagnetic wave having an extremely high frequency. In recent years, it has been planned to allocate radio waves in the 60 GHz band to radar devices for automobiles.

【0003】この周波数帯の発振器あるいは集積回路に
ついての技術は、例えば本願発明者の一人が発表した
「米山:非放射性誘電体線路を用いたミリ波集積回路,
電子情報通信学会論文誌C−I,Vol J73-C-I No3 pp87
-94 1990年3月」に開示がある。この文献には、35G
Hz帯の発振器、電力分配器、アンテナなどについての
記載がある。
A technique for an oscillator or an integrated circuit in this frequency band is disclosed by, for example, one of the inventors of the present application, "Yoneyama: Millimeter wave integrated circuit using non-radiative dielectric line,
IEICE Transactions CI, Vol J73-CI No3 pp87
-94 March 1990 ". In this document, 35G
There is a description about a Hz band oscillator, a power distributor, an antenna, and the like.

【0004】[0004]

【発明が解決しようとする課題】60GHz帯の電磁波
はその波長が約5mmであり、従来の立体回路や半導体
集積回路を単に小型化しても実用的な発振器や変調器を
実現することができない。
Electromagnetic waves in the 60 GHz band have a wavelength of about 5 mm, and practical oscillators and modulators cannot be realized by simply downsizing conventional three-dimensional circuits and semiconductor integrated circuits.

【0005】本発明はこのような背景に行われたもので
あって、ミリ波帯の有効な周波数変調器を簡単な構成で
実現することを目的とする。本発明は自動車に搭載して
利用できるミリ波帯の周波数変調器を実現することを目
的とする。
The present invention has been made against such a background, and an object thereof is to realize an effective frequency modulator in the millimeter wave band with a simple structure. An object of the present invention is to realize a millimeter waveband frequency modulator that can be used by being mounted on an automobile.

【0006】[0006]

【課題を解決するための手段】本発明は周波数変調器で
あり、本発明の特徴とするところは、搬送波が導入され
る非放射性誘電体線路と、この非放射性誘電体線路にそ
の伝搬方向に沿って非接触に設けられた可変容量ダイオ
ードと、この可変容量ダイオードとこの非放射性誘電体
線路との間に設けられこの可変容量ダイオードに近接す
る誘電体共振器と、この可変容量ダイオードの電極に変
調信号を印加する変調回路とを備えたところにある。
SUMMARY OF THE INVENTION The present invention is a frequency modulator, which is characterized in that a non-radiative dielectric line into which a carrier wave is introduced, and a non-radiative dielectric line in the propagation direction thereof. A non-contact variable capacitance diode, a dielectric resonator provided between the variable capacitance diode and the non-radiative dielectric line in proximity to the variable capacitance diode, and an electrode of the variable capacitance diode. And a modulation circuit for applying a modulation signal.

【0007】この周波数変調回路は、前記搬送波周波数
を50〜70GHzに選ぶことができる。
In this frequency modulation circuit, the carrier frequency can be selected to be 50 to 70 GHz.

【0008】前記搬送波は、ガンダイオード発振回路
と、このガンダイオードの電極に接続され発振周波数に
共振する共振器とを含む発振器から送出され、前記可変
容量ダイオードはバラクタダイオードであることが望ま
しい。
The carrier wave is transmitted from an oscillator including a Gunn diode oscillation circuit and a resonator connected to an electrode of the Gunn diode and resonating at an oscillation frequency, and the variable capacitance diode is preferably a varactor diode.

【0009】前記共振器と前記非放射性誘電体線路との
接続回路に、その非放射性誘電体線路を伝搬するモード
以外のモードを抑圧するモードサプレッサが介挿される
ことが望ましい。
It is desirable that a mode suppressor for suppressing a mode other than a mode propagating through the non-radiative dielectric line be inserted in a connection circuit between the resonator and the non-radiative dielectric line.

【0010】[0010]

【作用】ガンダイオードから発生した発振出力は、金属
ストリップ共振器に共振して50〜70GHz中の任意
の発振周波数となる。この発振器出力は、非放射性誘電
体線路中を伝搬する。変調器は、可変容量ダイオードを
非放射性誘電体にマウントしたものに誘電体共振器を近
接させ、これを非放射性誘電体線路に沿って非接触に設
置したものである。可変容量ダイオードは、電圧に対し
て静電容量が変化する素子である。その変化によって誘
電体共振器の共振周波数が変化する。この共振周波数で
誘電体共振器の周囲に電界が発生している。これが非放
射性誘電体線路の伝搬特性を変化させる。非放射性誘電
体線路を伝搬する発振器出力の周波数が誘電体共振器の
共振周波数変化の影響を受け、誘電体共振器の反射によ
り発振器側に戻る信号が可変容量ダイオードの容量と共
に変化する。これにより、発振器の出力の発振周波数が
変化して変調される。この装置により、簡単な構成によ
るミリ波帯の有効な周波数変調器が実現できる。
The oscillation output generated from the Gunn diode resonates with the metal strip resonator and has an arbitrary oscillation frequency within 50 to 70 GHz. The oscillator output propagates in the non-radiative dielectric line. The modulator is one in which a dielectric resonator is placed close to a variable capacitance diode mounted on a non-radiative dielectric, and the dielectric resonator is installed along the non-radiative dielectric line in a non-contact manner. The variable capacitance diode is an element whose capacitance changes with voltage. The resonance frequency of the dielectric resonator changes due to the change. An electric field is generated around the dielectric resonator at this resonance frequency. This changes the propagation characteristics of the non-radiative dielectric waveguide. The frequency of the oscillator output propagating through the non-radiative dielectric line is affected by the resonance frequency change of the dielectric resonator, and the signal returned to the oscillator side due to the reflection of the dielectric resonator changes with the capacitance of the variable capacitance diode. As a result, the oscillation frequency of the output of the oscillator changes and is modulated. With this device, an effective frequency modulator in the millimeter wave band can be realized with a simple configuration.

【0011】[0011]

【実施例】本発明実施例の構成を図1ないし図3を参照
して説明する。図1は本発明実施例装置の構成図であ
る。図2は本発明実施例装置の斜視図である。図3はバ
ラクタダイオードマウントの構成図である。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The structure of an embodiment of the present invention will be described with reference to FIGS. FIG. 1 is a block diagram of an apparatus according to an embodiment of the present invention. FIG. 2 is a perspective view of the device of the present invention. FIG. 3 is a configuration diagram of a varactor diode mount.

【0012】本発明は周波数変調器であり、本発明の特
徴とするところは、搬送波が導入される非放射性誘電体
線路として四フッ化エチレン樹脂片7と、この四フッ化
エチレン樹脂片7にその伝搬方向に沿って非接触に設け
られた可変容量ダイオードとしてバラクタダイオード1
と、このバラクタダイオード1とこの四フッ化エチレン
樹脂片7との間に設けられこのバラクタダイオード1に
近接する誘電体共振器9と、このバラクタダイオード1
の電極に変調信号を印加する変調回路20とを備えたと
ころにある。この周波数変調回路は、搬送波周波数が5
0〜70GHzである。
The present invention is a frequency modulator. The feature of the present invention resides in that, as a non-radiative dielectric line into which a carrier wave is introduced, a tetrafluoroethylene resin piece 7 and the tetrafluoroethylene resin piece 7 are provided. Varactor diode 1 as a variable capacitance diode provided in a non-contact manner along the propagation direction
And a dielectric resonator 9 provided between the varactor diode 1 and the tetrafluoroethylene resin piece 7 and adjacent to the varactor diode 1, and the varactor diode 1
And a modulation circuit 20 for applying a modulation signal to the electrodes of the. This frequency modulation circuit has a carrier frequency of 5
It is 0 to 70 GHz.

【0013】搬送波は、ガンダイオード発振回路として
ガンダイオードマウント4と、このガンダイオード3の
電極に接続され発振周波数に共振する共振器として金属
ストリップ共振器5とを含む発振器22から送出され
る。
The carrier wave is transmitted from an oscillator 22 including a Gunn diode mount 4 as a Gunn diode oscillation circuit and a metal strip resonator 5 as a resonator which is connected to an electrode of the Gunn diode 3 and resonates at an oscillation frequency.

【0014】金属ストリップ共振器5と四フッ化エチレ
ン樹脂片7との接続回路に、四フッ化エチレン樹脂片7
を伝搬するモード以外のモードを抑圧するモードサプレ
ッサ6が介挿されている。
In the connection circuit between the metal strip resonator 5 and the tetrafluoroethylene resin piece 7, the tetrafluoroethylene resin piece 7 is provided.
A mode suppressor 6 that suppresses a mode other than the mode that propagates is transmitted.

【0015】次に、図3を参照して本発明実施例装置の
動作を説明する。図3はバラクタダイオードマウント2
を示す図である。図3に示すようにバラクタダイオード
1を四フッ化エチレン樹脂板14の上に銅箔13により
マウントする。このバラクタダイオードマウント2の電
極に変調回路20により変調信号を印加することによ
り、図1および図2に示すようにこのバラクタダイオー
ドマウント2に高誘電率板8を介して近接している誘電
体共振器9の共振周波数が変化する。四フッ化エチレン
樹脂片7を伝搬する発振周波数は、誘電体共振器9の共
振の影響を受け、誘電体共振器9の反射により発振器2
2側に戻る信号が可変容量ダイオードの容量と共に変化
する。これにより、発振器22の出力の発振周波数が変
化して変調される。
Next, the operation of the apparatus of the present invention will be described with reference to FIG. Figure 3 shows the varactor diode mount 2
FIG. As shown in FIG. 3, the varactor diode 1 is mounted on the tetrafluoroethylene resin plate 14 with the copper foil 13. By applying a modulation signal to the electrodes of the varactor diode mount 2 by the modulation circuit 20, the dielectric resonance close to the varactor diode mount 2 via the high dielectric constant plate 8 as shown in FIGS. 1 and 2. The resonance frequency of the container 9 changes. The oscillation frequency propagating through the tetrafluoroethylene resin piece 7 is affected by the resonance of the dielectric resonator 9, and the oscillator 2 is reflected by the dielectric resonator 9.
The signal returning to the 2 side changes with the capacitance of the variable capacitance diode. As a result, the oscillation frequency of the output of the oscillator 22 is changed and modulated.

【0016】高誘電率板8はバラクタダイオードマウン
ト2とのインピーダンス整合を改善するために介挿され
る。
The high dielectric constant plate 8 is inserted to improve impedance matching with the varactor diode mount 2.

【0017】次に、図4を参照して本発明実施例の動作
特性を測定する構成を説明する。図4は動作特性を測定
する構成を示す図である。本発明実施例装置の四フッ化
エチレン樹脂片7を変換ホーン11に挿入することによ
り、変換ホーン11はアンテナとして動作する。アッテ
ネータ30を介して方向性結合器32に入力された被測
定信号は、分岐されてスプクトラムアナライザに出力さ
れる。他の被測定信号は、さらにEHチューナ34およ
びパワーメータ36に入力される。
Next, the configuration for measuring the operating characteristics of the embodiment of the present invention will be described with reference to FIG. FIG. 4 is a diagram showing a configuration for measuring operating characteristics. By inserting the tetrafluoroethylene resin piece 7 of the device of the embodiment of the present invention into the conversion horn 11, the conversion horn 11 operates as an antenna. The signal under measurement input to the directional coupler 32 via the attenuator 30 is branched and output to the spectrum analyzer. Other measured signals are further input to the EH tuner 34 and the power meter 36.

【0018】次に、図4に示した動作特性を測定する構
成を用いて本発明実施例装置の周波数特性を説明する。
図5は本発明実施例装置の周波数特性を示す図である。
横軸にバラクタダイオードバイアス電圧をとり、縦軸に
周波数変調幅をとる。本発明実施例装置を用いればおよ
そ0〜80MHzにわたりほぼ線形に、また出力100
mWの周波数変調信号が得られた。
Next, the frequency characteristics of the apparatus of the present invention will be described using the configuration for measuring the operation characteristics shown in FIG.
FIG. 5 is a diagram showing frequency characteristics of the device of the present invention.
The horizontal axis represents the varactor diode bias voltage, and the vertical axis represents the frequency modulation width. Using the apparatus of the present invention, it is almost linear over about 0 to 80 MHz, and the output is 100
A frequency modulated signal of mW was obtained.

【0019】次に、図6〜図11を参照して本発明実施
例装置のその他の特性を説明する。図6はモードサプレ
ッサ6と誘電体共振器9との距離LとVSWR(Voltage
Standing Wave Ratio) および共振周波数との関係を示
す図である。図7はモードサプレッサ6と誘電体共振器
9との距離Lおよび測定に用いたプローブ位置を示す図
である。横軸に距離Lをとり、縦軸にVSWRおよび共
振周波数をとる。実線は四フッ化エチレン樹脂片7の先
端部を変換ホーン11に挿入して測定した値であり、一
点鎖線は図7に示した位置に設けたプローブで測定した
値である。変換ホーン11で測定した場合には距離Lは
0.4mmくらいがよく、プローブ位置で測定した場合
には距離Lは0.8mmくらいがよいことがわかる。
Next, other characteristics of the apparatus according to the present invention will be described with reference to FIGS. FIG. 6 shows the distance L between the mode suppressor 6 and the dielectric resonator 9 and VSWR (Voltage
It is a figure which shows the relationship between a Standing Wave Ratio) and a resonance frequency. FIG. 7 is a diagram showing the distance L between the mode suppressor 6 and the dielectric resonator 9 and the probe position used for measurement. The horizontal axis represents the distance L, and the vertical axis represents VSWR and the resonance frequency. The solid line is the value measured by inserting the tip of the tetrafluoroethylene resin piece 7 into the conversion horn 11, and the alternate long and short dash line is the value measured by the probe provided at the position shown in FIG. It can be seen that the distance L is preferably about 0.4 mm when measured with the conversion horn 11, and the distance L is preferably about 0.8 mm when measured at the probe position.

【0020】図8は誘電体共振器9とモードサプレッサ
6との距離g1と周波数変調幅との関係を示す図であ
る。横軸に距離g1をとり、縦軸に周波数変調幅をと
る。距離g1は0.5mmくらいがよいことがわかる。
FIG. 8 is a diagram showing the relationship between the distance g1 between the dielectric resonator 9 and the mode suppressor 6 and the frequency modulation width. The horizontal axis shows the distance g1 and the vertical axis shows the frequency modulation width. It can be seen that the distance g1 is preferably about 0.5 mm.

【0021】図9は図8の説明で述べた誘電体共振器9
とモードサプレッサ6との距離g1および図10で説明
する高誘電率板8と誘電体共振器9との距離g2を示す
図である。
FIG. 9 shows the dielectric resonator 9 described in the explanation of FIG.
FIG. 11 is a diagram showing a distance g1 between the mode suppressor 6 and and a distance g2 between the high dielectric constant plate 8 and the dielectric resonator 9 described in FIG.

【0022】図10は高誘電率板8と誘電体共振器9と
の距離g2と周波数変調幅との関係を示す図である。横
軸に距離g2をとり、縦軸に周波数変調幅をとる。距離
g2は短ければ短いほど周波数変調幅は大きくなる。
FIG. 10 is a diagram showing the relationship between the distance g2 between the high dielectric constant plate 8 and the dielectric resonator 9 and the frequency modulation width. The horizontal axis represents the distance g2, and the vertical axis represents the frequency modulation width. The shorter the distance g2, the larger the frequency modulation width.

【0023】図11は高誘電率板8の厚さtと周波数変
調幅との関係を示す図である。横軸に厚さtをとり、縦
軸に周波数変調幅をとる。高誘電率板8は、厚さ0.0
5mm程度がよいことがわかる。
FIG. 11 is a diagram showing the relationship between the thickness t of the high dielectric constant plate 8 and the frequency modulation width. The horizontal axis represents the thickness t, and the vertical axis represents the frequency modulation width. The high dielectric constant plate 8 has a thickness of 0.0
It turns out that about 5 mm is preferable.

【0024】[0024]

【発明の効果】以上説明したように、本発明によれば簡
単な構成によりミリ波帯の有効な周波数変調器が実現で
きる。自動車に搭載して利用できるミリ波帯の周波数変
調器が実現できる。
As described above, according to the present invention, an effective frequency modulator in the millimeter wave band can be realized with a simple structure. It is possible to realize a millimeter-wave frequency modulator that can be mounted on a vehicle and used.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明実施例装置の構成図。FIG. 1 is a configuration diagram of an apparatus according to an embodiment of the present invention.

【図2】本発明実施例装置の斜視図。FIG. 2 is a perspective view of an apparatus according to an embodiment of the present invention.

【図3】バラクタダイオードマウントを示す図。FIG. 3 is a diagram showing a varactor diode mount.

【図4】動作特性を測定する構成を示す図。FIG. 4 is a diagram showing a configuration for measuring operating characteristics.

【図5】本発明実施例装置の周波数特性を示す図。FIG. 5 is a diagram showing frequency characteristics of the device according to the embodiment of the present invention.

【図6】モードサプレッサと誘電体共振器との距離とV
SWRおよび共振周波数との関係を示す図。
FIG. 6 is the distance between the mode suppressor and the dielectric resonator and V
The figure which shows the relationship with SWR and a resonance frequency.

【図7】モードサプレッサと誘電体共振器との距離およ
び測定に用いたプローブ位置を示す図。
FIG. 7 is a diagram showing a distance between a mode suppressor and a dielectric resonator and a probe position used for measurement.

【図8】モードサプレッサと誘電体共振器との距離と周
波数変調幅との関係を示す図。
FIG. 8 is a diagram showing a relationship between a distance between a mode suppressor and a dielectric resonator and a frequency modulation width.

【図9】モードサプレッサと誘電体共振器との距離およ
び高誘電率板とモードサプレッサとの距離を示す図。
FIG. 9 is a diagram showing a distance between a mode suppressor and a dielectric resonator and a distance between a high dielectric constant plate and a mode suppressor.

【図10】高誘電率板とモードサプレッサとの距離と周
波数変調幅との関係を示す図。
FIG. 10 is a diagram showing the relationship between the distance between the high dielectric constant plate and the mode suppressor and the frequency modulation width.

【図11】高誘電率板の厚さと周波数変調幅との関係を
示す図。
FIG. 11 is a diagram showing the relationship between the thickness of the high dielectric constant plate and the frequency modulation width.

【符号の説明】[Explanation of symbols]

1 バラクタダイオード 2 ダラクタダイオードマウント 3 ガンダイオード 4 ガンダイオードマウント 5 金属ストリップ共振器 6 モードサプレッサ 7 四フッ化エチレン樹脂片 8 高誘電率板 9 誘電体共振器 10 アルミ板 11 変換ホーン 13 銅箔 14 四フッ化エチレン樹脂板 20 変調回路 22 発振器 30 アッテネータ 32 方向性結合器 34 EHチューナ 36 パワーメータ 1 Varactor diode 2 Dullactor diode mount 3 Gunn diode 4 Gunn diode mount 5 Metal strip resonator 6 Mode suppressor 7 Tetrafluoroethylene resin piece 8 High dielectric constant plate 9 Dielectric resonator 10 Aluminum plate 11 Conversion horn 13 Copper foil 14 Polytetrafluoroethylene resin plate 20 Modulation circuit 22 Oscillator 30 Attenuator 32 Directional coupler 34 EH tuner 36 Power meter

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 FI 技術表示箇所 // G01S 7/282 Z 8940−5J ─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. 5 Identification code Office reference number FI technical display location // G01S 7/282 Z 8940-5J

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 搬送波が導入される非放射性誘電体線路
と、この非放射性誘電体線路にその伝搬方向に沿って非
接触に設けられた可変容量ダイオードと、この可変容量
ダイオードとこの非放射性誘電体線路との間に設けられ
この可変容量ダイオードに近接する誘電体共振器と、こ
の可変容量ダイオードの電極に変調信号を印加する変調
回路とを備えたことを特徴とする周波数変調器。
1. A non-radiative dielectric line into which a carrier wave is introduced, a variable capacitance diode provided in the non-radiative dielectric line in a non-contact manner along the propagation direction thereof, the variable capacitance diode and the non-radiative dielectric line. A frequency modulator comprising: a dielectric resonator provided between the variable capacitance diode and adjacent to the body line; and a modulation circuit for applying a modulation signal to an electrode of the variable capacitance diode.
JP05052626A 1993-03-12 1993-03-12 Frequency modulator Expired - Fee Related JP3086883B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP05052626A JP3086883B2 (en) 1993-03-12 1993-03-12 Frequency modulator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP05052626A JP3086883B2 (en) 1993-03-12 1993-03-12 Frequency modulator

Publications (2)

Publication Number Publication Date
JPH06268445A true JPH06268445A (en) 1994-09-22
JP3086883B2 JP3086883B2 (en) 2000-09-11

Family

ID=12920029

Family Applications (1)

Application Number Title Priority Date Filing Date
JP05052626A Expired - Fee Related JP3086883B2 (en) 1993-03-12 1993-03-12 Frequency modulator

Country Status (1)

Country Link
JP (1) JP3086883B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0785591A2 (en) * 1996-01-25 1997-07-23 Murata Manufacturing Co., Ltd. Variable-frequency resonator, variable-frequency oscillator, and variable-frequency filter
US6034574A (en) * 1997-03-21 2000-03-07 Canon Kabushiki Kaisha Modulation apparatus
KR100587901B1 (en) * 2002-08-10 2006-06-08 엔알디테크 주식회사 NRD Guide Gunn Oscillator and Frequency Locking Method using Ceramic Resonator
US7265711B2 (en) 2004-06-29 2007-09-04 Kyocera Corporation High-frequency oscillator, high-frequency transmission-reception apparatus using the same, radar apparatus, and radar-apparatus-equipped vehicle and small boat equipped with the same

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0785591A2 (en) * 1996-01-25 1997-07-23 Murata Manufacturing Co., Ltd. Variable-frequency resonator, variable-frequency oscillator, and variable-frequency filter
EP0785591A3 (en) * 1996-01-25 1998-05-27 Murata Manufacturing Co., Ltd. Variable-frequency resonator, variable-frequency oscillator, and variable-frequency filter
EP1276167A1 (en) * 1996-01-25 2003-01-15 Murata Manufacturing Co., Ltd. Variable-frequency resonator, variable-frequency oscillator, and variable-frequency filter
US6034574A (en) * 1997-03-21 2000-03-07 Canon Kabushiki Kaisha Modulation apparatus
KR100587901B1 (en) * 2002-08-10 2006-06-08 엔알디테크 주식회사 NRD Guide Gunn Oscillator and Frequency Locking Method using Ceramic Resonator
US7265711B2 (en) 2004-06-29 2007-09-04 Kyocera Corporation High-frequency oscillator, high-frequency transmission-reception apparatus using the same, radar apparatus, and radar-apparatus-equipped vehicle and small boat equipped with the same

Also Published As

Publication number Publication date
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