JPH06267408A - Manufacture of detection probe for very small displacement, detection probe for very small displacement, and scanning probe microscope and information processor using these - Google Patents
Manufacture of detection probe for very small displacement, detection probe for very small displacement, and scanning probe microscope and information processor using theseInfo
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- JPH06267408A JPH06267408A JP5072841A JP7284193A JPH06267408A JP H06267408 A JPH06267408 A JP H06267408A JP 5072841 A JP5072841 A JP 5072841A JP 7284193 A JP7284193 A JP 7284193A JP H06267408 A JPH06267408 A JP H06267408A
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- Prior art keywords
- probe
- cantilever
- micro
- detection probe
- displacement
- Prior art date
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は原子間力やトンネル電流
の検知等に用いられる微小変位検出プローブ及びこれを
用いた走査型プローブ顕微鏡並びに情報処理装置に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a fine displacement detection probe used for detecting atomic force and tunnel current, a scanning probe microscope using the probe, and an information processing apparatus.
【０００２】[0002]
【従来の技術】単結晶、非晶質を問わず実空間の高い分
解能を有する表面観察方法として、走査型プローブ顕微
鏡（以下、ＳＰＭと略す）と総称され、試料とプローブ
の近接相互作用による種々の力を測定する装置が開発さ
れてきている。近年、注目を集めている走査型トンネル
顕微鏡（ＳＴＭ）（Ｇ．Ｂｉｎｎｉｎｇ ｅｔ ａｌ．
Ｐｈｙｓ．Ｒｅｖ．Ｌｅｔｔ．４９、５７（１９８
２））は、プローブと試料が接近したときに得られるト
ンネル電流及び電界放射電流を利用して表面状態を調べ
る装置であり、走査型原子間力顕微鏡（ＡＦＭ）は試料
とプローブが接近したときに生じる原子間力を検出して
試料の表面状態を調べる装置である。2. Description of the Related Art A scanning probe microscope (hereinafter abbreviated as SPM) is a general term for a surface observing method having high resolution in a real space regardless of whether it is a single crystal or an amorphous material, and various methods based on proximity interaction between a sample and a probe are used. Devices have been developed to measure the force of the. A scanning tunneling microscope (STM) (G. Binning et al.
Phys. Rev. Lett. 49, 57 (198
2)) is a device for investigating the surface state using the tunnel current and field emission current obtained when the probe and the sample come close to each other. The scanning atomic force microscope (AFM) is a device when the sample and the probe come close to each other. This is a device for examining the surface condition of the sample by detecting the interatomic force generated in the.
【０００３】かかるプローブとしては、カンチレバー上
に探針尖端を備えたものが知られている。従来、カンチ
レバーの変位を光干渉計、特にファブリペロー共振器で
測定するＳＰＭには、（ａ）Ｇ．Ｂｉｎｎｉｎｇらから
出願されたもの（ＥＰ０２９０６４８，ＪＰ６３−３０
９８０２）があり、この構成を図１１に示す。これはカ
ンチレバー５上に備えた反射鏡７３と、支持体７１の反
対面に備えたハーフミラー７４と、支持体７１に設けら
れたヴァイアホール７２でファブリペロー共振器が構成
される。As such a probe, a probe having a probe tip on a cantilever is known. Conventionally, the SPM for measuring the displacement of the cantilever using an optical interferometer, particularly a Fabry-Perot resonator, includes (a) G. Filed from Binning et al. (EP0290648, JP63-30)
9802), and this configuration is shown in FIG. A Fabry-Perot resonator is composed of a reflecting mirror 73 provided on the cantilever 5, a half mirror 74 provided on the opposite surface of the support 71, and a via hole 72 provided in the support 71.
【０００４】また、別の従来例として（ｂ）Ｒｅｖ．Ｓ
ｃｉ．Ｉｎｓｔｒｕｍ．，Ｖｏｌ．６２，Ｎｏ．５，
ｐ．ｐ．１２８０−１２８４（１９９１）にＰ．Ｍｕｌ
ｈｅｒｎらが報告したものがあり、この構成を図１２に
示す。これは光ファイバー端８４を一方の反射面となる
ように高精度の治具８２を用いてファブリペロー共振器
を構成したものである。As another conventional example, (b) Rev. S
ci. Instrum. , Vol. 62, No. 5,
p. p. 1280-1284 (1991). Mul
Some of them have been reported by hern et al., and this configuration is shown in FIG. This is a structure in which a Fabry-Perot resonator is constructed by using a highly accurate jig 82 so that the optical fiber end 84 becomes one reflection surface.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら上記従来
例（ａ）では、ファブリペロー共振器を構成する２つの
反射面７３，７４の間隔がプローブ支持体７１の厚さ以
上に離れてしまう。プローブ支持体の厚さを測定光の波
長あるいはそれ以下の厚さとすることは、取扱いや作製
技術の面から不可能である。このために以下の欠点があ
った。（１）測定光を波長あるいはその１０倍程度のビ
ームに絞ろうとすると、光の平行度が悪くなり、従って
共振器を往復する間のビームの広がりから、得られる干
渉縞が暗くなる、あるいはコントラストが下がってしま
う。（２）また、逆に平行度の高い太いビームを用いる
とカンチレバーの変位が自由端側と固定端側で異なるこ
とから、得られる干渉縞の動きが複雑になる、あるいは
コントラストが下がってしまう。However, in the above-mentioned conventional example (a), the distance between the two reflecting surfaces 73 and 74 constituting the Fabry-Perot resonator is larger than the thickness of the probe support 71. It is impossible to set the thickness of the probe support to the wavelength of the measurement light or less than that from the viewpoint of handling and manufacturing technology. Therefore, there are the following drawbacks. (1) If the measurement light is narrowed down to a beam having a wavelength or about 10 times that, the parallelism of the light is deteriorated, so that the interference fringes obtained become dark or the contrast becomes dark due to the spread of the beam while reciprocating the resonator. Will drop. (2) On the contrary, when a thick beam having a high degree of parallelism is used, the displacement of the cantilever differs between the free end side and the fixed end side, so that the movement of the interference fringes obtained becomes complicated or the contrast decreases.
【０００６】また、従来例（ｂ）では、共振器の２つの
反射面である光ファイバー端面８４とカンチレバー８１
上の反射面を近接させ、かつほぼ平行となるように調整
するには作業者の高い熟練度、あるいは高い精度の治具
が要求される、また生産性も悪い。Further, in the conventional example (b), the optical fiber end surface 84 and the cantilever 81, which are two reflecting surfaces of the resonator, are provided.
In order to bring the upper reflecting surfaces close to each other and to adjust them so that they are substantially parallel to each other, a highly skilled operator or a jig with high accuracy is required, and productivity is also poor.
【０００７】従って、本発明の目的は、明るくコントラ
ストの高い干渉縞が得られるファブリペロー共振器を備
えたプローブを提供することにある。Therefore, an object of the present invention is to provide a probe having a Fabry-Perot resonator capable of obtaining bright and high-contrast interference fringes.
【０００８】本発明の他の目的は、上記プローブを備え
た走査型プローブ顕微鏡、情報処理装置を提供すること
にある。Another object of the present invention is to provide a scanning probe microscope and an information processing apparatus equipped with the above probe.
【０００９】[0009]
【課題を解決するための手段及び作用】上記目的を達成
するために成された本発明は、第一に、カンチレバーの
自由端に探針尖端を備え、該探針尖端と試料表面との相
互作用により生ずるカンチレバーの微小変位が、測定光
を用いた光学的な手段により検出される微小変位検出プ
ローブの製造方法において、（１）測定光に対して透明
な層上に後工程で除去するバッファ層を形成する工程、
（２）上記透明層上にカンチレバー支持部を形成する工
程、（３）上記バッファ層上にカンチレバー本体を形成
する工程、（４）カンチレバー形成後に上記バッファ層
を除去する工程とを含むことを特徴とする微小変位検出
プローブの作製方法であり、第二に、上記第一の作製方
法により作製される微小変位検出プローブであって、片
面に測定光を部分反射する反射面を有する透明層上に、
該透明層に対して空隙を保持してカンチレバーが形成さ
れていることを特徴とする微小変位検出プローブであ
り、第三に、プローブと試料間の近接相互作用を利用し
た走査型プローブ顕微鏡において、該プローブに上記第
二の微小変位検出プローブを用いたことを特徴とする走
査型プローブ顕微鏡であり、第四に、記録媒体にプロー
ブを介して情報の記録再生を行う情報処理装置におい
て、該プローブに上記第二の微小変位検出プローブを用
いたことを特徴とする情報処理装置である。Means for Solving the Problems and Actions to be Solved by the Invention The first aspect of the present invention is to provide a free end of a cantilever with a probe tip, the probe tip and the sample surface being mutually In the method of manufacturing a microdisplacement detection probe, the microdisplacement of the cantilever caused by the action is detected by an optical means using the measurement light, (1) A buffer to be removed in a later step on a layer transparent to the measurement light. Forming layers,
(2) a step of forming a cantilever support portion on the transparent layer, (3) a step of forming a cantilever body on the buffer layer, and (4) a step of removing the buffer layer after forming the cantilever. A method for manufacturing a micro displacement detection probe, and second, a micro displacement detection probe manufactured by the above-mentioned first manufacturing method, on a transparent layer having a reflective surface for partially reflecting measurement light on one surface ,
A microdisplacement detection probe characterized in that a cantilever is formed by holding a gap with respect to the transparent layer, and thirdly, in a scanning probe microscope utilizing proximity interaction between the probe and the sample, A scanning probe microscope characterized by using the second minute displacement detection probe for the probe, and fourth, in an information processing device for recording and reproducing information on a recording medium via the probe, In the information processing device, the second minute displacement detection probe is used.
【００１０】本発明の微小変位検出プローブは、一般の
半導体プロセス技術を用いて容易に作製することがで
き、その具体例を図１の工程図に従って説明する。The micro-displacement detecting probe of the present invention can be easily manufactured by using a general semiconductor process technique, and a specific example thereof will be described with reference to the process chart of FIG.
【００１１】先ず、基板１上に１００Å〜数百Åの厚さ
で測定光の反射率が５０〜９０％となる第１の反射層２
を形成する（図１（ａ）参照）。基板１はカンチレバー
およびファブリペロー共振器を保持するものであり、測
定光（波長λ）が可視光の場合はガラス基板、赤外光の
場合はガラスあるいはＳｉ基板など測定光に対して透明
な材料を用いることができる。第１の反射層２としては
ＡｕあるいはＣｒなどの蒸着膜や誘電体多層膜を用いる
ことができる。First, the first reflection layer 2 having a thickness of 100 Å to several hundred Å on the substrate 1 and the reflectance of the measurement light is 50 to 90%.
Are formed (see FIG. 1A). The substrate 1 holds a cantilever and a Fabry-Perot resonator, and is a material transparent to the measurement light such as a glass substrate when the measurement light (wavelength λ) is visible light and a glass or Si substrate when the measurement light is infrared light. Can be used. As the first reflective layer 2, a vapor deposition film of Au or Cr or a dielectric multilayer film can be used.
【００１２】次に、厚さがλの数分の１程度のＡｌある
いはＴｉのバッファ層３を形成し、フォトリソ技術によ
りカンチレバー支持部となる部分３ａをエッチングによ
り除去する（図１（ｂ）参照）。Next, a buffer layer 3 of Al or Ti having a thickness of a fraction of λ is formed, and a portion 3a to be a cantilever supporting portion is removed by etching by photolithography (see FIG. 1B). ).
【００１３】次に、第１の反射層２と同様にして第２の
反射層４を形成する（図１（ｃ）参照）。尚、この第２
の反射層４は、後述するカンチレバー本体が測定光を反
射する材料から成る場合には必ずしも設ける必要はな
い。Next, the second reflective layer 4 is formed in the same manner as the first reflective layer 2 (see FIG. 1C). In addition, this second
The reflective layer 4 is not necessarily provided when the cantilever body described later is made of a material that reflects the measurement light.
【００１４】次に、カンチレバー本体５となるＳｉＯ2
あるいはＳｉ3Ｎ4層を厚さ０．５〜１μｍでスパッタあ
るいはＣＶＤにより形成する。さらにフォトリソ技術に
よりカンチレバー形状に加工し、その上に探針尖端６を
Ｐｔ等でＥＢ蒸着により作製する（図１（ｄ）参照）。Next, SiO 2 which becomes the cantilever body 5
Alternatively, a Si 3 N 4 layer is formed with a thickness of 0.5 to 1 μm by sputtering or CVD. Further, it is processed into a cantilever shape by a photolithography technique, and a probe tip 6 is formed thereon by EB vapor deposition with Pt or the like (see FIG. 1D).
【００１５】最後に、ＡｌあるいはＴｉのバッファ層３
を選択的に、例えば弗酸と硝酸の混酸でエッチングによ
り除去する（図１（ｅ）参照）。尚、７ａは測定光、７
ｂは第１の反射層２からの反射光、７ｃは第２の反射層
４からの反射光を表わしている。Finally, a buffer layer 3 of Al or Ti
Are selectively removed by etching, for example, with a mixed acid of hydrofluoric acid and nitric acid (see FIG. 1E). In addition, 7a is a measuring light,
Reference numeral b represents reflected light from the first reflective layer 2, and reference numeral 7c represents reflected light from the second reflective layer 4.
【００１６】この様にして作製される本発明の微小変位
検出プローブは、透過層となる基板１に設けられた反射
層２と、カンチレバー５に設けられた反射層４との間隔
を測定光の波長あるいはそれ以下とすることができ、ま
た、これらの反射面をほぼ平行な状態で形成することが
できる。これにより、明るくコントラストの高い干渉縞
が得られるファブリペロー共振器を備えた微小変位検出
プローブとなるものである。The micro-displacement detecting probe of the present invention produced in this manner measures the distance between the reflective layer 2 provided on the substrate 1 serving as the transmissive layer and the reflective layer 4 provided on the cantilever 5 for measuring light. The wavelength can be set to the wavelength or less, and these reflecting surfaces can be formed in a substantially parallel state. As a result, the fine displacement detection probe is provided with the Fabry-Perot resonator that can obtain bright and high-contrast interference fringes.
【００１７】本発明の微小変位検出プローブは図１
（ｅ）に示したような構成に限定されるものではなく、
例えば図２や図３に示すような構成とすることもでき
る。The small displacement detection probe of the present invention is shown in FIG.
The configuration is not limited to that shown in (e),
For example, the configuration shown in FIGS. 2 and 3 may be adopted.
【００１８】図２の構成では、測定光に対して不透明な
基板８上に透過層９を形成した後、図１と同様に反射層
２，４、バッファ層３、カンチレバー５、尖端６を形成
後、バッファ層３を除去し、さらに測定光７ａが透過す
る部分の基板８を除去して形成したものである。In the structure shown in FIG. 2, after the transmission layer 9 is formed on the substrate 8 which is opaque to the measurement light, the reflection layers 2 and 4, the buffer layer 3, the cantilever 5 and the tip 6 are formed as in FIG. After that, the buffer layer 3 is removed, and the substrate 8 in a portion where the measurement light 7a is transmitted is removed.
【００１９】図３の構成では、測定光に対して不透明な
基板８上に、先に反射層２を形成し、その上に透過層９
を形成し、その後は図２のものと同じ工程で作製したも
のであり、２つの反射層２，４間に透明層９と空隙３ｂ
が存在している。In the configuration of FIG. 3, the reflective layer 2 is first formed on the substrate 8 which is opaque to the measurement light, and the transmissive layer 9 is formed thereon.
2 is formed in the same process as that of FIG. 2, and the transparent layer 9 and the void 3b are provided between the two reflective layers 2 and 4.
Exists.
【００２０】尚、本発明の微小変位プローブにおいて、
カンチレバー本体が絶縁性材料で形成されている場合、
図４に示されるようにカンチレバー５上に尖端６を形成
する前に、後でバッファ層除去行程で犯されない材料例
えばＡｕなどで電極１０を形成し、その上の尖端６を導
電性材料、例えばＰｔで形成する。これにより試料と尖
端６間にトンネル電流を流すための電極１０とファブリ
ペロー共振器を備えたプローブが得られる。In the micro displacement probe of the present invention,
If the cantilever body is made of an insulating material,
Prior to forming the tip 6 on the cantilever 5 as shown in FIG. 4, the electrode 10 is formed of a material that is not violated later in the buffer layer removal process, such as Au, and the tip 6 thereon is made of a conductive material, such as Au. It is made of Pt. As a result, a probe provided with the electrode 10 for passing a tunnel current between the sample and the tip 6 and the Fabry-Perot resonator is obtained.
【００２１】尚、上記構成例ではカンチレバー支持部５
ａとカンチレバー本体５をおなじ材料で形成したが、支
持部５ａを別の材料、例えばＡｕ電極で挟み込んだ圧電
体ＺｎＯで蒸着やスパッタにより形成し、外部から圧電
体に電圧を印加することにより圧電体を変形させて、２
つの反射面の間隔を調整可能なものとすることもでき
る。In the above configuration example, the cantilever support portion 5
Although the a and the cantilever body 5 are made of the same material, the supporting portion 5a is made of another material, for example, a piezoelectric body ZnO sandwiched between Au electrodes by vapor deposition or sputtering, and a voltage is applied to the piezoelectric body from outside to generate a piezoelectric material. Transform your body, 2
The distance between the two reflecting surfaces may be adjustable.
【００２２】[0022]
【実施例】以下、本発明の実施例を説明する。EXAMPLES Examples of the present invention will be described below.
【００２３】実施例１ 本実施例では図１に示したような微小変位プローブを形
成した。 Example 1 In this example, a minute displacement probe as shown in FIG. 1 was formed.
【００２４】先ず、ガラス基板１上に３００Åの厚さで
測定光（波長６３２８Å）の反射率が５０％となるＡｕ
の層２を蒸着した。（図１（ａ））。さらにその上に厚
さが２０００Å程度のＡｌのバッファ層３を蒸着し、フ
ォトリソ技術によりカンチレバー支持部となる部分３ａ
をエッチングにより除去した（図１（ｂ））。さらに先
の反射層２と同様の反射層４を蒸着した（図１
（ｃ））。その上にカンチレバー本体５となるＳｉＯ2
層を厚さ０．５μｍでスパッタあるいはＣＶＤにより形
成した。さらにフォトリソ技術によりカンチレバー形状
に加工し、その上にＰｔで尖端６をＥＢ蒸着により作製
した（図１（ｄ））。その後、Ａｌのバッファ層３を選
択的に、弗酸と硝酸の混酸でエッチングにより除去した
（図１（ｅ））。First, Au having a thickness of 300 Å on the glass substrate 1 has a reflectance of 50% for the measuring light (wavelength 6328 Å).
Layer 2 of was deposited. (FIG. 1 (a)). Further, a buffer layer 3 of Al having a thickness of about 2000 Å is vapor-deposited thereon, and a portion 3a to be a cantilever support portion is formed by photolithography technology.
Were removed by etching (FIG. 1 (b)). Further, a reflective layer 4 similar to the reflective layer 2 was vapor-deposited (see FIG. 1).
(C)). On top of that, the cantilever body 5 becomes SiO 2
The layer was formed with a thickness of 0.5 μm by sputtering or CVD. Further, it was processed into a cantilever shape by a photolithography technique, and the tip 6 was made of Pt thereon by EB vapor deposition (FIG. 1 (d)). Then, the Al buffer layer 3 was selectively removed by etching with a mixed acid of hydrofluoric acid and nitric acid (FIG. 1E).
【００２５】本実施例で作製した微小変位プローブは、
２つの反射面がほぼ平行で、その間隔は２０００Åであ
り、上記測定光の波長以下に形成しているため、該測定
光を用いて得られる干渉縞は非常に明るくコントラスト
の高いものであった。The micro displacement probe manufactured in this embodiment is
Since the two reflecting surfaces are substantially parallel and the distance between them is 2000 Å and they are formed at the wavelength of the measuring light or less, the interference fringes obtained by using the measuring light are very bright and have high contrast. .
【００２６】実施例２ 本実施例では図２に示したような微小変位プローブを形
成した。 Example 2 In this example, a minute displacement probe as shown in FIG. 2 was formed.
【００２７】先ず、可視の測定光に対して不透明な方位
（１００）のＳｉ基板８の表面に熱酸化層９を形成し
た。さらにその上に実施例１と同様に、反射層２，４、
バッファ層３、カンチレバー５、尖端６を形成後、バッ
ファ層３を除去し、さらに測定光７ａが透過する部分の
Ｓｉ基板をＫＯＨをエッチャントとして用いた異方性エ
ッチングにより除去した。First, a thermal oxide layer 9 was formed on the surface of a Si substrate 8 having an azimuth (100) opaque to visible measuring light. Further thereon, as in Example 1, the reflective layers 2, 4,
After forming the buffer layer 3, the cantilever 5, and the tip 6, the buffer layer 3 was removed, and the Si substrate of the portion through which the measurement light 7a was transmitted was removed by anisotropic etching using KOH as an etchant.
【００２８】本実施例の微小変位プローブにおいても、
可視光を用いて得られる干渉縞は非常に明るくコントラ
ストの高いものであった。Also in the small displacement probe of this embodiment,
The interference fringes obtained using visible light were very bright and had high contrast.
【００２９】実施例３ 本実施例では図３に示したような微小変位プローブを形
成した。 Example 3 In this example, a minute displacement probe as shown in FIG. 3 was formed.
【００３０】先ず、可視の測定光に対して不透明な方位
（１００）のＳｉ基板８上にＡｕの反射層２を蒸着し、
その上に、ＳｉＯ2の透明層９をＣＶＤで形成した。さ
らにその上に実施例１と同様に、反射層２，４、バッフ
ァ層３、カンチレバー５、尖端６を形成後、バッファ層
３を除去し、さらに測定光７ａが透過する部分のＳｉ基
板をＫＯＨをエッチャントとして用いた異方性エッチン
グにより除去した。First, a reflective layer 2 of Au is vapor-deposited on a Si substrate 8 having an azimuth (100) which is opaque to visible measurement light.
A transparent layer 9 of SiO 2 was formed thereon by CVD. Further, similarly to the first embodiment, after forming the reflection layers 2 and 4, the buffer layer 3, the cantilever 5 and the tip 6 thereon, the buffer layer 3 is removed, and the portion of the Si substrate through which the measurement light 7a is transmitted is KOH. Was removed by anisotropic etching using as an etchant.
【００３１】本実施例の微小変位プローブにおいても、
可視光を用いて得られる干渉縞は非常に明るくコントラ
ストの高いものであった。Also in the small displacement probe of this embodiment,
The interference fringes obtained using visible light were very bright and had high contrast.
【００３２】実施例４ 本実施例では実施例１〜３にて作製した本発明の微小変
位プローブを図５に示されるような構成の走査型プロー
ブ顕微鏡に搭載し、試料表面の観察を行ったものであ
る。 Example 4 In this example, the micro-displacement probe of the present invention produced in Examples 1 to 3 was mounted on a scanning probe microscope having a structure as shown in FIG. 5, and the sample surface was observed. It is a thing.
【００３３】先ず、図５の装置において探針尖端６が観
察試料５５の表面に１ｎｍ以下の距離まで近接するよう
に、Ｘ・Ｙ・Ｚステージ５６で該試料５５の位置を調整
する。光源５１から出射された測定光７ａは、偏光ビー
ムスプリッタ５２によりプローブ方向に反射され、１／
４波長板５３により偏光方向が４５度回転される。第１
の反射層２で測定光の一部が反射光７ｂとなり、透過光
の一部あるいは全てが第２の反射層４で反射光７ｃとな
る。反射光７ｂ，７ｃは１／４波長板５３を透過すると
偏光方向がさらに４５度回転され、偏光ビームスプリッ
タ５２を透過して受光素子５４で受光される。受光され
る光強度は、複数の反射光が干渉した結果の強度とな
る。この光強度は２つの反射層２，４間距離によって、
すなわちカンチレバー５のたわみ量によって変化する。First, in the apparatus of FIG. 5, the position of the sample 55 is adjusted by the XYZ stage 56 so that the probe tip 6 approaches the surface of the observation sample 55 by a distance of 1 nm or less. The measurement light 7a emitted from the light source 51 is reflected toward the probe by the polarization beam splitter 52,
The polarization direction is rotated by 45 degrees by the four-wave plate 53. First
Part of the measurement light becomes reflected light 7b at the reflective layer 2 and part or all of the transmitted light becomes reflected light 7c at the second reflective layer 4. When the reflected lights 7b and 7c are transmitted through the quarter-wave plate 53, the polarization direction is further rotated by 45 degrees, transmitted through the polarization beam splitter 52, and received by the light receiving element 54. The received light intensity is the result of the interference of a plurality of reflected lights. This light intensity depends on the distance between the two reflective layers 2 and 4,
That is, it changes depending on the amount of deflection of the cantilever 5.
【００３４】この光強度変化をＺ方向変位信号として用
い、探針尖端６と試料５５との相互作用によって生じる
カンチレバー５のたわみ量が一定となるようにＺ方向フ
ィードバック処理回路５７でＺ方向ステージを調整しな
がら、Ｘ，Ｙステージ駆動回路５７によりＸ方向，Ｙ方
向の走査を行う。このとき試料５５の表面状態により変
化するＺ方向のフィードバック信号とＸ，Ｙの位置信号
を用いて表示装置５８で試料表面状態を観察することが
できる。Using this change in light intensity as a Z direction displacement signal, the Z direction feedback processing circuit 57 moves the Z direction stage so that the deflection amount of the cantilever 5 caused by the interaction between the probe tip 6 and the sample 55 becomes constant. While adjusting, the X and Y stage drive circuit 57 performs scanning in the X and Y directions. At this time, the surface condition of the sample can be observed on the display device 58 by using the feedback signal in the Z direction and the position signals of X and Y which change depending on the surface condition of the sample 55.
【００３５】上記プローブを用いて、高精度な走査型プ
ローブ顕微鏡を容易に実現できた。A highly accurate scanning probe microscope can be easily realized by using the above probe.
【００３６】尚、観察試料５５を情報が記録された媒
体、即ち表面変調したＨＯＰＧ（Ｈｉｇｈｌｙ−Ｏｒｉ
ｅｎｔｅｄ−Ｐｙｒｏｌｉｔｈｉｃ−Ｇｒａｐｈｉｔ
ｅ）劈開面、Ｓｉウェハー、Ｒｈ２５Ｚｒ７５、Ｃｏ５
５Ｔｂ６５、ガラス金属とし、表示装置２６を情報抽出
装置とすることにより、本構成で情報再生装置も容易に
実現できた。The observation sample 55 is a medium on which information is recorded, that is, a surface-modulated HOPG (Highly-Ori).
ented-Pyrolithic-Graphit
e) Cleaved surface, Si wafer, Rh25Zr75, Co5
By using 5Tb65 and glass metal and using the display device 26 as an information extracting device, an information reproducing device could be easily realized with this configuration.
【００３７】実施例５ 本実施例では実施例１〜３の微小変位プローブの作製方
法において、フォトリソグラフのパターンを拡張するこ
とにより同一シリコン基板上に複数個作製したマルチ微
小変位プローブを、図６に示される構成の情報処理装置
に搭載し、情報の記録再生を行ったものである。 Embodiment 5 In this embodiment, in the method for manufacturing the micro displacement probe of Embodiments 1 to 3, a plurality of multi micro displacement probes manufactured on the same silicon substrate by expanding the pattern of the photolithography are shown in FIG. It is mounted on the information processing apparatus having the configuration shown in (1) to record and reproduce information.
【００３８】記録時には、記録用電圧印加装置６２によ
り適当なプローブの電極にパルス電圧を印加し、そのプ
ローブの尖端６と媒体５５（例えば、スクアリリュウム
−ビス−６−オクチルアズレン等）間に流れるトンネル
電流により媒体の表面状態を変化させて情報を記録す
る。At the time of recording, a pulse voltage is applied to the electrode of an appropriate probe by the recording voltage applying device 62, and the pulse is applied between the tip 6 of the probe and the medium 55 (for example, squarylium-bis-6-octylazulene). Information is recorded by changing the surface state of the medium by the flowing tunnel current.
【００３９】６１は一つの光源と複数の部分反射ミラー
からなる光出射ユニットで、ここから出射された光７ａ
は実施例４と同様に２つの反射層で反射光７ｂ，７ｃと
なる。この反射光によりできた干渉縞の光強度を受光素
子アレイ６３で検知する。得られた光強度情報から記録
された情報を再生することができた。これにより、情報
記録再生装置が得られる。Reference numeral 61 is a light emitting unit consisting of one light source and a plurality of partial reflection mirrors, and the light 7a emitted from this unit.
In the same manner as in Example 4, the two reflection layers serve as reflected lights 7b and 7c. The light intensity of the interference fringe formed by this reflected light is detected by the light receiving element array 63. The recorded information could be reproduced from the obtained light intensity information. As a result, an information recording / reproducing device is obtained.
【００４０】本プローブによれば、明るくコントラスト
の高い干渉縞が得られるので、各プローブ毎に光源を備
えたり、複数の光スイッチで光路を切り替えたりするこ
となく、単純な光源構成で情報処理装置を実現できた。According to the present probe, since bright and high-contrast interference fringes can be obtained, an information processing apparatus with a simple light source configuration is provided without providing a light source for each probe or switching the optical path with a plurality of optical switches. Was realized.
【００４１】[0041]
【発明の効果】以上説明したように本発明によれば以下
の効果を奏する。As described above, the present invention has the following effects.
【００４２】（１）一般の半導体プロセス技術を用い
て、２つの反射面がほぼ平行で間隔が測定光の波長以下
のファブリペロー共振器を備えた微小変位検出プローブ
を容易に作製できる。(1) Using a general semiconductor process technique, it is possible to easily fabricate a minute displacement detection probe provided with a Fabry-Perot resonator in which two reflecting surfaces are substantially parallel to each other and the distance is equal to or less than the wavelength of the measuring light.
【００４３】（２）本発明のプローブにより測定光を用
いて得られる干渉縞は非常に明るくコントラストが高い
ものとなり、より正確で精度良く微小変位を検出でき
る。(2) The interference fringes obtained by using the measuring light with the probe of the present invention are very bright and have a high contrast, and more precise and accurate microdisplacements can be detected.
【００４４】（３）本発明のプローブを用いて構成され
る走査型プローブ顕微鏡及び情報処理装置は、より高精
度な装置となる。(3) The scanning probe microscope and the information processing device configured by using the probe of the present invention are highly accurate devices.
【図１】本発明の一実施例に係るプローブ作製工程を示
す断面図である。FIG. 1 is a cross-sectional view showing a probe manufacturing process according to an embodiment of the present invention.
【図２】本発明の他の実施例によるプローブ断面図であ
る。FIG. 2 is a cross-sectional view of a probe according to another embodiment of the present invention.
【図３】本発明の他の実施例によるプローブ断面図であ
る。FIG. 3 is a cross-sectional view of a probe according to another embodiment of the present invention.
【図４】本発明の他の実施例によるプローブ断面図であ
る。FIG. 4 is a cross-sectional view of a probe according to another embodiment of the present invention.
【図５】本発明のプローブを用いた走査型プローブ顕微
鏡の概略図である。FIG. 5 is a schematic view of a scanning probe microscope using the probe of the present invention.
【図６】本発明のプローブを用いた情報処理装置の概略
図である。FIG. 6 is a schematic diagram of an information processing apparatus using the probe of the present invention.
【図７】従来例のファブリペロー共振器を備えたプロー
ブを示す図である。FIG. 7 is a diagram showing a probe including a Fabry-Perot resonator of a conventional example.
【図８】従来例のファブリペロー共振器を備えたプロー
ブを示す図である。FIG. 8 is a diagram showing a probe including a Fabry-Perot resonator of a conventional example.
１ 測定光に対して透明な基板 ２ 第１の反射層 ３ バッファ層 ３ａ カンチレバー支持部のために除去するバッファ層 ３ｂ バッファ層を除去してできた空隙 ４ 第２の反射層 ５ カンチレバー ６ 探針尖端 ７ 測定光 ７ａ 入射光 ７ｂ 第１の反射層からの反射光 ７ｃ 第２の反射層からの反射光 ８ 不透明基板 ９ 透明層 １０ 電極 ５１ レーザ光源 ５２ 偏光ビームスプリッタ ５３ １／４波長板 ５４ 受光素子 ５５ 観察試料あるいは情報記録媒体 ５６ ＸＹＺ方向移動ステージ ５７ Ｚ方向フィードバック及びＸＹステージ駆動回路 ５８ 表示装置 ６１ 光源と光分波器からなる発光ユニット ６２ 記録用電圧印加装置 ６３ 受光素子アレイ 1 substrate transparent to measurement light 2 first reflective layer 3 buffer layer 3a buffer layer removed for cantilever support 3b void formed by removing buffer layer 4 second reflective layer 5 cantilever 6 probe Tip 7 Measurement light 7a Incident light 7b Reflected light from the first reflective layer 7c Reflected light from the second reflective layer 8 Opaque substrate 9 Transparent layer 10 Electrode 51 Laser light source 52 Polarized beam splitter 53 1/4 Wave plate 54 Light reception Element 55 Observation sample or information recording medium 56 XYZ direction moving stage 57 Z direction feedback and XY stage drive circuit 58 Display device 61 Light emitting unit consisting of light source and optical demultiplexer 62 Recording voltage applying device 63 Light receiving element array
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 41/09 (72)発明者 黒田 亮 東京都大田区下丸子３丁目30番２号 キヤ ノン株式会社内─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification number Internal reference number FI Technical indication location H01L 41/09 (72) Inventor Ryo Kuroda 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc. In the company
Claims (8)
え、該探針尖端と試料表面との相互作用により生ずるカ
ンチレバーの微小変位が、測定光を用いた光学的な手段
により検出される微小変位検出プローブの製造方法にお
いて、 （１）測定光に対して透明な層上に後工程で除去するバ
ッファ層を形成する工程、 （２）上記透明層上にカンチレバー支持部を形成する工
程、 （３）上記バッファ層上にカンチレバー本体を形成する
工程、 （４）カンチレバー形成後に上記バッファ層を除去する
工程 とを含むことを特徴とする微小変位検出プローブの作製
方法。1. A free tip of a cantilever is provided with a probe tip, and a minute displacement of the cantilever caused by an interaction between the probe tip and a sample surface is detected by an optical means using measurement light. In the method for producing a detection probe, (1) a step of forming a buffer layer to be removed in a subsequent step on a layer transparent to measurement light, (2) a step of forming a cantilever support portion on the transparent layer, (3) ) A step of forming a cantilever body on the buffer layer, and (4) a step of removing the buffer layer after forming the cantilever.
れる微小変位検出プローブであって、片面に測定光を部
分反射する反射面を有する透明層上に、該透明層に対し
て空隙を保持してカンチレバーが形成されていることを
特徴とする微小変位検出プローブ。2. A micro-displacement detecting probe manufactured by the manufacturing method according to claim 1, wherein a void is provided on the transparent layer on one surface thereof, the transparent layer having a reflecting surface for partially reflecting the measurement light. A micro-displacement detection probe, characterized in that it holds and forms a cantilever.
る面に、反射面が形成されていることを特徴とする請求
項２に記載の微小変位検出プローブ。3. The micro-displacement detecting probe according to claim 2, wherein a reflective surface is formed on a surface of the cantilever facing the transparent layer.
が、測定光の波長以下であることを特徴とする請求項２
又は３に記載の微小変位検出プローブ。4. The gap between the transparent layer and the cantilever is less than or equal to the wavelength of measurement light.
Or the small displacement detection probe described in 3.
探針尖端が導電性材料から成り、該探針尖端と試料間に
トンネル電流を流すための電極を備えたことを特徴とす
る請求項２〜４いずれかに記載の微小変位検出プロー
ブ。5. The probe tip provided at the free end of the cantilever is made of a conductive material, and is provided with an electrode for passing a tunnel current between the probe tip and the sample. The small displacement detection probe according to any one of 4 to 4.
検出プローブを同一基板上に複数個有することを特徴と
するマルチ微小変位検出プローブ。6. A multi-micro displacement detection probe comprising a plurality of micro displacement detection probes according to claim 2 on the same substrate.
した走査型プローブ顕微鏡において、該プローブに請求
項２〜６いずれかに記載の微小変位検出プローブを用い
たことを特徴とする走査型プローブ顕微鏡。7. A scanning probe microscope utilizing close proximity interaction between a probe and a sample, wherein the micro-displacement detecting probe according to any one of claims 2 to 6 is used as the probe. microscope.
再生を行う情報処理装置において、該プローブに請求項
２〜６いずれかに記載の微小変位検出プローブを用いた
ことを特徴とする情報処理装置。8. An information processing apparatus for recording / reproducing information on / from a recording medium via a probe, wherein the micro displacement detection probe according to claim 2 is used for the probe. apparatus.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5072841A JPH06267408A (en) | 1993-03-09 | 1993-03-09 | Manufacture of detection probe for very small displacement, detection probe for very small displacement, and scanning probe microscope and information processor using these |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5072841A JPH06267408A (en) | 1993-03-09 | 1993-03-09 | Manufacture of detection probe for very small displacement, detection probe for very small displacement, and scanning probe microscope and information processor using these |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06267408A true JPH06267408A (en) | 1994-09-22 |
Family
ID=13501030
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5072841A Withdrawn JPH06267408A (en) | 1993-03-09 | 1993-03-09 | Manufacture of detection probe for very small displacement, detection probe for very small displacement, and scanning probe microscope and information processor using these |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06267408A (en) |
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| US6888362B2 (en) | 2000-11-09 | 2005-05-03 | Formfactor, Inc. | Test head assembly for electronic components with plurality of contoured microelectronic spring contacts |
| US7245137B2 (en) | 2000-11-09 | 2007-07-17 | Formfactor, Inc. | Test head assembly having paired contact structures |
| WO2005015570A1 (en) * | 2003-08-11 | 2005-02-17 | Japan Science And Technology Agency | Probe for probe microscope using transparent substrate, method of producing the same, and probe microscope device |
| KR100793122B1 (en) * | 2003-08-11 | 2008-01-10 | 도쿠리쓰교세이호징 가가쿠 기주쓰 신코 기코 | Probe for probe microscope using transparent substrate, method of producing the same, and probe microscope device |
| WO2006062048A1 (en) * | 2004-12-06 | 2006-06-15 | Japan Science And Technology Agency | Mechanical vibrator and production method therefor |
| JP2007212182A (en) * | 2006-02-07 | 2007-08-23 | Kagawa Univ | Probe device, manufacturing method of the probe device, and stylus-type surface measuring device |
| WO2019118327A1 (en) * | 2017-12-11 | 2019-06-20 | Quality Vision International Inc. | Interferometric touch probe |
| JP2021505867A (en) * | 2017-12-11 | 2021-02-18 | クオリティー ヴィジョン インターナショナル インコーポレイテッドＱｕａｌｉｔｙ Ｖｉｓｉｏｎ Ｉｎｔｅｒｎａｔｉｏｎａｌ， Ｉｎｃ． | Interfering touch probe |
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