JPH06260589A - Resin sealed semiconductor device and its manufacture and its packaging method - Google Patents

Resin sealed semiconductor device and its manufacture and its packaging method

Info

Publication number
JPH06260589A
JPH06260589A JP5047736A JP4773693A JPH06260589A JP H06260589 A JPH06260589 A JP H06260589A JP 5047736 A JP5047736 A JP 5047736A JP 4773693 A JP4773693 A JP 4773693A JP H06260589 A JPH06260589 A JP H06260589A
Authority
JP
Japan
Prior art keywords
tape material
inner leads
semiconductor device
leads
lead
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5047736A
Other languages
Japanese (ja)
Inventor
Masakazu Sakano
正和 坂野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Renesas Semiconductor Package and Test Solutions Co Ltd
Original Assignee
Hitachi Hokkai Semiconductor Ltd
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Hokkai Semiconductor Ltd, Hitachi Ltd filed Critical Hitachi Hokkai Semiconductor Ltd
Priority to JP5047736A priority Critical patent/JPH06260589A/en
Publication of JPH06260589A publication Critical patent/JPH06260589A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Abstract

PURPOSE:To prevent the reduction of interval between inner leads and the position deviation of leads in the lateral direction, and improve reliability, by forming a part for relieving the stress caused by thermal contraction, on a tape member for fixing inner lead. CONSTITUTION:On the single surfaces of a plurality of inner leads 4 of a plastic molded type semiconductor device, an insulative tape member 8 in which a plurality of slits are formed is stuck in the directions nearly perpendicular to the stretching directions of the inner leads 4. Since the slits are formed in the tape member, the stress caused by thermal contraction is relaxed and the stress applied to the inner leads on which the tape member is stuck is decreased. Hence the reduction of interval between the inner leads and the position deviation of leads in the lateral direction can be prevented. Since the tape member engages with sealing resin in the slit parts, the adhesion is improved, and exfoliation and package crack can be prevented.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明は、半導体装置製造技術に
関するものであり、特に半導体装置の組立技術に利用し
て有効なものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device manufacturing technique, and is particularly effective when applied to a semiconductor device assembling technique.

【０００２】[0002]

【従来の技術】近年、半導体装置、特にゲートアレイや
マイクロコンピュータ等のＣ−ＭＯＳ（Ｃｏｍｐｌｅｍ
ｅｎｔａｌｙ Ｍｅｔａｌ Ｏｘｉｄｅ Ｓｅｍｉｃｏ
ｎｄｕｃｔｏｒ）．Ｌｏｇｉｃ．ＬＳＩのような大容量
かつ高速の半導体装置には、パッケージ本体の４方向か
らガルウイングタイプのリードが引き出されたＱＦＰ
（Ｑｕａｄ Ｆｌａｔ Ｐａｃｋａｇｅ）タイプの多ピ
ンパッケージが多く使用されている。In recent years, semiconductor devices, in particular a gate array, a microcomputer, etc. C-MOS of (C omplem
entaly M etal O xide S emico
nductor). Logic. For large-capacity and high-speed semiconductor devices such as LSI, QFP with gull-wing type leads drawn from four directions of the package body
(Q uad F lat P ackage) type of multi-pin package is often used.

【０００３】図８に、ＱＦＰタイプのリードフレーム１
の概観を示す。中央部に半導体ペレットを装着するため
のタブ２を有し、このタブ２はタブ吊りリード３によっ
て支持されている。タブ２の周囲を外部導出用リードの
樹脂封止される部分であるインナーリード４が放射状に
延在しており、これらのインナーリード４は、樹脂封止
時に封止用樹脂が封止用金型から金型の外への流出する
のを防止するダムリード５によって連結されている。ダ
ムリード５から外側へは、外部導出用リードのアウター
リード６が延在し、その先端部はタイバー７によって連
結されている。FIG. 8 shows a QFP type lead frame 1.
Shows an overview of. A tab 2 for mounting a semiconductor pellet is provided at the center, and the tab 2 is supported by a tab suspension lead 3. Inner leads 4 that are resin-sealed portions of the lead-out leads extend radially around the tab 2. These inner leads 4 are sealed with a sealing resin when the resin is sealed. They are connected by dam leads 5 which prevent the mold from flowing out of the mold. An outer lead 6 as an external lead-out extends from the dam lead 5 to the outside, and its tip end is connected by a tie bar 7.

【０００４】最近では、益々の大容量化、高速化に伴
い、ＱＦＰパッケージのピン数も増加する一方であり、
現在、２００ピンを越えるものも多くなってきている。
それに伴って、リードフレームの外部導出リード部も微
細化されいる。In recent years, the number of pins in the QFP package has been increasing with the increase in capacity and speed.
At present, more than 200 pins are increasing.
Along with this, the external lead portions of the lead frame are also miniaturized.

【０００５】通常、パッケージの大きさは予め規定され
ているため、更に多ピン化する場合、予め決められた大
きさのパッケージでピン数だけ増やす方法をとる。従っ
て、それぞれのリード幅及びリードピッチが縮小され、
リードピッチ及びリード幅が狭くなる。従って、隣接し
あうリード同志が接触しやすくなり、電気的短絡を起こ
しやすくなる。また、リード自体の強度も低下し、リー
ド曲がりやリードがばたつく等の障害が発生しやすくな
る。特に、インナーリード部はアウターリード部よりも
幅が狭くなるので、上記の問題が著しく、例えばリード
のばたつきはワイヤボンディング工程に悪影響を与え、
ボンディング不良の原因となる。Since the size of the package is usually defined in advance, when the number of pins is further increased, a method of increasing the number of pins in a package of a predetermined size is adopted. Therefore, each lead width and lead pitch are reduced,
The lead pitch and lead width are narrowed. Therefore, adjacent leads are likely to come into contact with each other, and an electrical short circuit is likely to occur. In addition, the strength of the lead itself is also lowered, and troubles such as bending of the lead and flapping of the lead are likely to occur. In particular, since the inner lead portion is narrower in width than the outer lead portion, the above-mentioned problem is significant, for example, flapping of the lead adversely affects the wire bonding process,
This will cause defective bonding.

【０００６】このような多ピンパッケージのインナーリ
ードを固定するために、インナーリードの片面に絶縁性
のテープ材を貼って固定する技術が実用化されている。In order to fix the inner lead of such a multi-pin package, a technique of putting an insulating tape material on one surface of the inner lead and fixing it has been put into practical use.

【０００７】尚、インナーリードを絶縁性のテープ材に
よって固定する技術に関しては、例えば、特開昭６０−
２４１２４２号公報に開示されている。A technique for fixing the inner leads with an insulating tape material is disclosed in, for example, Japanese Patent Laid-Open No. 60-
It is disclosed in Japanese Patent No. 241242.

【０００８】[0008]

【発明が解決しようとする課題】インナーリードとテー
プ材との接着は、熱圧着によって行なわれる。その際、
テープ材は熱膨張した状態で圧着されるが、テープ材と
リードフレームとではテープ材の方が熱膨張率が大きい
ため、熱圧着された後、常温まで冷却される段階で収縮
が生じ、図９に示すように、テープ材２１に接着された
複数のインナーリード４はテープ材２１の収縮方向へ引
っ張られる。そのため、インナーリード間の間隔が縮ま
ったり、リードの横方向への位置ずれが起こることがあ
る。また、テープ材２１が熱収縮に伴って波状に変形し
てしまい、インナーリード４が上下にずれてしまうた
め、ワイヤボンディング工程の際にボンディング不良が
生じるという問題がある。ところで、テープ材の熱膨
張、収縮に伴う応力は、テープ材の幅が広い程大きい。
従って、テープ材の幅を狭くすることで、収縮に伴う応
力を緩和させることができる。しかしながらその場合、
テープ材のインナーリードへの接着加工が困難になると
いう欠点がある。The inner lead and the tape material are bonded by thermocompression bonding. that time,
The tape material is crimped in a thermally expanded state, but since the tape material and the lead frame have a higher coefficient of thermal expansion, shrinkage occurs when the tape material is thermocompressed and then cooled to room temperature. As shown in FIG. 9, the plurality of inner leads 4 adhered to the tape material 21 are pulled in the shrinking direction of the tape material 21. Therefore, the distance between the inner leads may be reduced, or the leads may be displaced in the lateral direction. Further, the tape material 21 is deformed in a wave shape due to the heat shrinkage, and the inner leads 4 are vertically displaced, so that there is a problem that defective bonding occurs during the wire bonding process. By the way, the stress associated with the thermal expansion and contraction of the tape material increases as the width of the tape material increases.
Therefore, by reducing the width of the tape material, it is possible to relieve the stress associated with the shrinkage. However, in that case,
There is a drawback that it becomes difficult to bond the tape material to the inner leads.

【０００９】従って本発明は、インナーリード固定用の
テープ材に、熱収縮に伴う応力を緩和する部分を設ける
ことにより上記問題点を解決し、信頼性の高い半導体装
置の製造技術を提供することを目的とする。Therefore, the present invention solves the above problems by providing a tape material for fixing inner leads with a portion for relieving stress caused by heat shrinkage, and provides a highly reliable semiconductor device manufacturing technique. With the goal.

【００１０】本発明の前記並びにその他の目的と新規な
特徴は、本明細書の記述及び添付図面から明らかになる
であろう。The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

【００１１】[0011]

【課題を解決するための手段】本願において開示される
発明のうち代表的なものの概要を簡単に説明すれば、次
のとおりである。すなわち、樹脂封止型の半導体装置の
複数のインナーリードの片面に、該インナーリードの延
在方向と略直交する方向に、複数のスリットが設けられ
た絶縁性のテープ材を接着するものである。The outline of the representative one of the inventions disclosed in the present application will be briefly described as follows. That is, an insulative tape material having a plurality of slits is bonded to one surface of a plurality of inner leads of a resin-sealed semiconductor device in a direction substantially orthogonal to the extending direction of the inner leads. .

【００１２】[0012]

【作用】上記した手段によれば、絶縁性のテープ材のス
リットが設けられた部分は、スリットによってテープ材
の幅が狭くなり、熱収縮に伴う応力が緩和されるため、
テープ材が接着されたインナーリードにかかる略直交方
向の応力が減少し、インナーリード間の間隔の狭まりを
減少させる。According to the above-mentioned means, the width of the tape material is narrowed by the slit at the portion where the slit of the insulating tape material is provided, and the stress due to the heat shrinkage is relieved.
The stress in the substantially orthogonal direction applied to the inner leads to which the tape material is adhered is reduced, and the narrowing of the gap between the inner leads is reduced.

【００１３】[0013]

【実施例】図１は本発明の一実施例である半導体装置に
用いるＱＦＰタイプのリードフレーム１の概観を示す。
タブ２の周囲を外部導出用リードの樹脂封止される部分
であるインナーリード４が放射状に延在しており、これ
らのインナーリード４は、絶縁性のテープ材８によって
固定されている。このテープ材８にはスリット９がテー
プ材８の延在方向に複数本設けられている。このテープ
材８の材料は、例えばポリイミド系樹脂から成る。一般
に、インナーリード４とテープ材８とは、熱圧着によっ
て接着されるが、その際、テープ材８がインナーリード
４に熱圧着された後の常温まで冷却される段階におい
て、テープ材８は熱収縮し、それに伴って応力を生じさ
せている。しかしながら、スリット９はテープ材８に幅
の狭い部分を形成しているため、テープ材８が接着され
たインナーリード４にかかる熱収縮に伴う応力が緩和さ
れ、インナーリード間の間隔が縮まったり、リードの横
方向への位置ずれを防止している。また、テープ材が熱
収縮に伴って波状に変形することによるインナーリード
の上下へのずれを減少させ、ワイヤボンディング工程の
際のボンディング不良を防止することができる。テープ
材８はスリットを設けることによって細い部分を形成し
ているが、テープ材８の全体的な幅は従来の幅を保持し
ている。従って、インナーリード４への貼り付け加工に
ついては、従来と同様に行なうことができる。1 is a schematic view of a QFP type lead frame 1 used in a semiconductor device according to an embodiment of the present invention.
Inner leads 4 that are resin-sealed portions of the lead-out leads extend radially around the tab 2, and these inner leads 4 are fixed by an insulating tape material 8. The tape material 8 is provided with a plurality of slits 9 in the extending direction of the tape material 8. The material of the tape material 8 is, for example, a polyimide resin. Generally, the inner lead 4 and the tape material 8 are bonded by thermocompression bonding, but at that time, the tape material 8 is heated to room temperature after the tape material 8 is thermocompression bonded to the inner lead 4. It contracts and causes stress with it. However, since the slit 9 forms a narrow portion in the tape material 8, stress due to thermal contraction applied to the inner leads 4 to which the tape material 8 is adhered is relaxed, and the space between the inner leads is shortened. This prevents the leads from shifting laterally. Further, it is possible to reduce the vertical displacement of the inner leads due to the wave-like deformation of the tape material due to the heat shrinkage, and prevent defective bonding during the wire bonding process. The tape material 8 forms a thin portion by providing a slit, but the overall width of the tape material 8 maintains the conventional width. Therefore, the attachment process to the inner lead 4 can be performed in the same manner as the conventional one.

【００１４】図３は、本発明の半導体装置１３を示す。
タブ２には半導体ペレット１０が接着されており、半導
体ペレット１０の複数の外部接続用電極とインナーリー
ド４とは金属細線１１、例えば金線によって電気的に接
続されている。熱圧着によってインナーリード４に接着
されたテープ材８に有するスリット９には、樹脂封止時
に熱によって液状化した封止用樹脂１２が入り込んで固
化し、テープ材８と噛み合っていることにより、封止用
樹脂１２とテープ材８との密着性を向上させている。こ
のことは、後に半導体装置を高温加熱する際にも効果を
奏するものである。たとえば、半導体装置を実装基板に
はんだ付け実装する場合、はんだを溶融させるために高
温雰囲気中で半導体装置及び実装基板が加熱される。そ
の際、テープ材と封止用樹脂との接触部分において、テ
ープ材と封止用樹脂との剥離が生じやすくなり、更に
は、その剥離した部分に入り込んだ水分が水蒸気となっ
て膨張し封止用樹脂にクラックを生じさせてしまう。し
かしながら本発明では、テープ材のスリット部分で封止
用樹脂とテープ材とが噛み合うことにより密着性が向上
しており、剥離が生じにくくなっている。従って、剥離
が生じることに起因するパッケージクラックを防止する
ことができる。FIG. 3 shows a semiconductor device 13 of the present invention.
A semiconductor pellet 10 is bonded to the tab 2, and the plurality of external connection electrodes of the semiconductor pellet 10 and the inner lead 4 are electrically connected by a thin metal wire 11, for example, a gold wire. The slit resin 9 adhered to the inner lead 4 by thermocompression bonding has the slit resin 9 that is liquefied by heat at the time of resin sealing and solidifies and is meshed with the tape material 8. The adhesion between the sealing resin 12 and the tape material 8 is improved. This is effective even when the semiconductor device is heated at a high temperature later. For example, when the semiconductor device is mounted on a mounting board by soldering, the semiconductor device and the mounting board are heated in a high temperature atmosphere to melt the solder. At that time, the tape material and the sealing resin are easily separated from each other at the contact portion between the tape material and the sealing resin, and further, the moisture that has entered the separated portion becomes steam to expand and seal. It causes cracks in the stop resin. However, in the present invention, since the sealing resin and the tape material are meshed with each other at the slit portion of the tape material, the adhesiveness is improved and peeling is less likely to occur. Therefore, package cracks caused by peeling can be prevented.

【００１５】以上、本発明者によってなされた発明を実
施例に基づき具体的に説明したが、本発明は上記実施例
に限定されるものではなく、その要旨を逸脱しない範囲
で種々変更可能であることは言うまでもない。例えば、
上記実施例では、テープ材のスリットは、テープ材の長
手方向に千鳥状に形成された長方形のスリットであった
が、図３に示すように三角形のスリット１５を互い違い
に設けたものでも良い。また、図４に示すように、微小
な貫通孔１７を多数個設けることにより、テープ材１６
全体に均等に応力緩和が働く。更に、スリットではな
く、図５に示すように、幅の小さいテープ材１８に応力
緩和部分１９が設けられたものを用い、その応力緩和部
分１９をインナーリード４間に位置させる、あるいは、
図６のように小さい波形のテープ材２０を用いることに
よっても、熱収縮に伴う応力を充分に緩和するものであ
る。Although the invention made by the present inventor has been specifically described based on the embodiments, the present invention is not limited to the above embodiments, and various modifications can be made without departing from the scope of the invention. Needless to say. For example,
In the above-mentioned embodiment, the slits of the tape material are rectangular slits formed in a zigzag shape in the longitudinal direction of the tape material, but triangular slits 15 may be provided alternately as shown in FIG. Further, as shown in FIG. 4, by providing a large number of minute through holes 17, the tape material 16
Stress relaxation works evenly throughout. Further, instead of the slit, as shown in FIG. 5, a tape material 18 having a small width and provided with a stress relaxation portion 19 is used, and the stress relaxation portion 19 is positioned between the inner leads 4, or
The use of the tape material 20 having a small corrugation as shown in FIG. 6 also sufficiently relaxes the stress associated with heat shrinkage.

【００１６】[0016]

【発明の効果】本願において開示される発明のうち代表
的なものによって得られる効果を簡単に説明すれば、下
記のとおりである。The effects obtained by the typical ones of the inventions disclosed in the present application will be briefly described as follows.

【００１７】すなわち、樹脂封止型の半導体装置の複数
のインナーリードの片面に、該インナーリードの延在方
向と略直交する方向に複数のスリットが設けられた絶縁
性のテープ材を貼り付けることにより、熱収縮に伴う応
力が緩和され、テープ材が貼付られたインナーリードに
かかる応力が減少するため、インナーリード間の間隔が
縮まったり、リードの横方向への位置ずれを防止でき
る。また、スリット部分で封止用樹脂とテープ材とが噛
み合うため密着性が向上し、剥離及びパッケージクラッ
クを防止できるものである。That is, an insulative tape material provided with a plurality of slits in a direction substantially orthogonal to the extending direction of the inner leads is attached to one surface of the plurality of inner leads of the resin-sealed semiconductor device. As a result, the stress caused by the heat shrinkage is relaxed, and the stress applied to the inner leads to which the tape material is attached is reduced, so that it is possible to prevent the gap between the inner leads from being narrowed and prevent the leads from being laterally displaced. Further, since the sealing resin and the tape material are engaged with each other at the slit portion, the adhesiveness is improved and peeling and package cracking can be prevented.

【００１８】[0018]

【図面の簡単な説明】[Brief description of drawings]

【図１】本発明の一実施例である半導体装置に用いるリ
ードフレームを示す図である。FIG. 1 is a diagram showing a lead frame used in a semiconductor device according to an embodiment of the present invention.

【図２】本発明の一実施例である半導体装置に用いるリ
ードフレームのインナーリード部を示す図である。FIG. 2 is a diagram showing an inner lead portion of a lead frame used in a semiconductor device according to an embodiment of the present invention.

【図３】本発明の一実施例である半導体装置の断面図で
ある。FIG. 3 is a cross-sectional view of a semiconductor device that is an embodiment of the present invention.

【図４】本発明の他の実施例である半導体装置に用いる
テープ材を示す図である。FIG. 4 is a diagram showing a tape material used in a semiconductor device according to another embodiment of the present invention.

【図５】本発明の他の実施例である半導体装置に用いる
テープ材を示す図である。FIG. 5 is a diagram showing a tape material used in a semiconductor device according to another embodiment of the present invention.

【図６】本発明の他の実施例である半導体装置に用いる
テープ材を示す図である。FIG. 6 is a diagram showing a tape material used in a semiconductor device according to another embodiment of the present invention.

【図７】本発明の他の実施例である半導体装置に用いる
テープ材を示す図である。FIG. 7 is a diagram showing a tape material used in a semiconductor device according to another embodiment of the present invention.

【図８】従来のテープ材を用いたリードフレームを示す
図である。FIG. 8 is a diagram showing a lead frame using a conventional tape material.

【図９】従来のテープ材を用いたリードフレームのイン
ナーリード部を示す図である。FIG. 9 is a diagram showing an inner lead portion of a lead frame using a conventional tape material.

【符号の説明】[Explanation of symbols]

１・・リードフレーム，２・・タブ，３・・タブ吊りリ
ード，４・・インナーリード，５・・ダムリード，６・
・アウターリード，７・・タイバー，８・・テープ材，
９・・スリット，１０・・半導体ペレット，１１・・金
属細線，１２・・封止用樹脂，１３・・半導体装置，１
４・・テープ材，１５・・スリット，１６・・テープ
材，１７・・貫通孔，１８・・テープ材，１９・・応力
緩和部分，２０・・テープ材1 ... Lead frame, 2 ... Tab, 3 ... Tab suspension lead, 4 ... Inner lead, 5 ... Dam lead, 6 ...
・ Outer lead, 7 ・ ・ tie bar, 8 ・ ・ tape material,
9 ... Slit, 10 ... Semiconductor pellet, 11 ... Metal fine wire, 12 ... Encapsulating resin, 13 ... Semiconductor device, 1
4 ... Tape material, 15 ... Slit, 16 ... Tape material, 17 ... Through hole, 18 ... Tape material, 19 ... Stress relaxation portion, 20 ... Tape material

Claims (3)

【特許請求の範囲】[Claims] 【請求項１】複数のインナーリードの片面に、該インナ
ーリードの延在方向と略直交する方向に絶縁性のテープ
材を接着して成る樹脂封止型半導体装置であって、前記
テープ材には複数のスリットが設けられていることを特
徴とする樹脂封止型半導体装置。1. A resin-encapsulated semiconductor device, comprising an insulative tape material adhered to one surface of a plurality of inner leads in a direction substantially orthogonal to the extending direction of the inner leads, the tape material comprising: Is a resin-encapsulated semiconductor device having a plurality of slits. 【請求項２】複数のインナーリードの片面に、該インナ
ーリードの延在方向と略直交する方向に絶縁性のテープ
材を接着した後、前記インナーリード部を樹脂封止する
樹脂封止型半導体装置の製造方法であって、前記テープ
材には複数のスリットが設けられていることを特徴とす
る樹脂封止型半導体装置の製造方法。2. A resin-sealed semiconductor in which an insulative tape material is adhered to one surface of a plurality of inner leads in a direction substantially orthogonal to the extending direction of the inner leads, and then the inner lead portion is resin-sealed. A method of manufacturing a device, wherein the tape material is provided with a plurality of slits. 【請求項３】複数のインナーリードの片面に、該インナ
ーリードの延在方向と略直交する方向に絶縁性のテープ
材を接着して成る樹脂封止型半導体装置を実装基板に載
置し、前記樹脂封止型半導体装置を加熱することにより
基板実装を行なう樹脂封止型半導体装置の実装方法であ
って、前記テープ材には、複数のスリットが設けられて
いることを特徴とする樹脂封止型半導体装置の実装方
法。3. A resin-encapsulated semiconductor device in which an insulative tape material is bonded to one surface of a plurality of inner leads in a direction substantially orthogonal to the extending direction of the inner leads is mounted on a mounting substrate, A method for mounting a resin-sealed semiconductor device, comprising mounting the substrate by heating the resin-sealed semiconductor device, wherein the tape material is provided with a plurality of slits. Mounting method of static semiconductor device.
JP5047736A 1993-03-09 1993-03-09 Resin sealed semiconductor device and its manufacture and its packaging method Pending JPH06260589A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5047736A JPH06260589A (en) 1993-03-09 1993-03-09 Resin sealed semiconductor device and its manufacture and its packaging method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5047736A JPH06260589A (en) 1993-03-09 1993-03-09 Resin sealed semiconductor device and its manufacture and its packaging method

Publications (1)

Publication Number Publication Date
JPH06260589A true JPH06260589A (en) 1994-09-16

Family

ID=12783633

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5047736A Pending JPH06260589A (en) 1993-03-09 1993-03-09 Resin sealed semiconductor device and its manufacture and its packaging method

Country Status (1)

Country Link
JP (1) JPH06260589A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09148520A (en) * 1995-11-24 1997-06-06 Nec Kyushu Ltd Taping lead frame
WO2018147278A1 (en) * 2017-02-08 2018-08-16 株式会社ジェイエスピー Seat core material

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09148520A (en) * 1995-11-24 1997-06-06 Nec Kyushu Ltd Taping lead frame
WO2018147278A1 (en) * 2017-02-08 2018-08-16 株式会社ジェイエスピー Seat core material
US10807507B2 (en) 2017-02-08 2020-10-20 Jsp Corporation Seat core material

Similar Documents

Publication Publication Date Title
US4984059A (en) Semiconductor device and a method for fabricating the same
US4862246A (en) Semiconductor device lead frame with etched through holes
KR970006532B1 (en) Molded hybrid ic package and lead frame
US20020058359A1 (en) Method of attaching a semiconductor chip to a leadframe with a footprint of about the same size as the chip and packages formed thereby
US20040029318A1 (en) Semiconductor device having contact prevention spacer
US20070000599A1 (en) Assembly method for semiconductor die and lead frame
JPS62259450A (en) Assembled unit in which integrated circuit die and lead frame are mutually connected and method of mutual connection
US6340837B1 (en) Semiconductor device and method of fabricating the same
JP2924840B2 (en) Tape-BGA type semiconductor device
JP3638750B2 (en) Semiconductor device
JP2570611B2 (en) Resin-sealed semiconductor device
JPH0797594B2 (en) Semiconductor integrated circuit device
JPH06260589A (en) Resin sealed semiconductor device and its manufacture and its packaging method
KR950005456B1 (en) Plastic encapsulate semiconductor device
JP3337526B2 (en) Structure of package type semiconductor parts
JP3383475B2 (en) Semiconductor device and lead frame used for manufacturing the same
JPH01315149A (en) Manufacture of semiconductor device
JP3574718B2 (en) Semiconductor device and manufacturing method thereof
KR0119651B1 (en) Structure of lead frame loading board of semiconductor
JPH10163250A (en) Semiconductor device and manufacture of semiconductor device
KR0119653B1 (en) Structure of lead frame loading board of semiconductor
JPH0555430A (en) Lead frame and resin-sealed semiconductor device using same
JPH06163800A (en) Resin sealed semiconductor device and method of fabricating the same
JPS62147752A (en) Semiconductor device
JPH02192758A (en) Manufacture of lead frame and semiconductor device