JPH06235615A - Measuring apparatus for thickness of film - Google Patents

Measuring apparatus for thickness of film

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Publication number
JPH06235615A
JPH06235615A JP2220093A JP2220093A JPH06235615A JP H06235615 A JPH06235615 A JP H06235615A JP 2220093 A JP2220093 A JP 2220093A JP 2220093 A JP2220093 A JP 2220093A JP H06235615 A JPH06235615 A JP H06235615A
Authority
JP
Japan
Prior art keywords
film
section
film thickness
measured
refractive index
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2220093A
Other languages
Japanese (ja)
Inventor
Mikio Sugioka
幹生 杉岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shimadzu Corp
Original Assignee
Shimadzu Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shimadzu Corp filed Critical Shimadzu Corp
Priority to JP2220093A priority Critical patent/JPH06235615A/en
Publication of JPH06235615A publication Critical patent/JPH06235615A/en
Pending legal-status Critical Current

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  • Length Measuring Devices By Optical Means (AREA)

Abstract

PURPOSE:To provide a film thickness measuring apparatus using a spectropho tometer which can accurately measure even a sample changing the index of refraction depending on wavelengths. CONSTITUTION:An interference spectrum of a to-be-measured film is measured by a spectrophotometer (ST1). A calculating range is designated (ST2). The calculating range is divided to some sections (ST3). The average index of refraction for each section is input (ST4), and the film thickness for every section is calculated with the use of the average index of refraction (ST5). The total sum of the obtained film thicknesses of the sections is divided by the dividing number of sections, thereby to obtain the average value which is the thickness of the to-be-measured film (ST6).

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は、分光光度計を用い、
0.2μm〜100μm程度の膜の膜厚測定装置に関す
る。
This invention uses a spectrophotometer,
The present invention relates to a film thickness measuring device for a film having a thickness of about 0.2 μm to 100 μm.

【0002】[0002]

【従来の技術】一般に、シリコンウェハ上に、窒化膜、
フォトレジスト膜などの膜を成膜する半導体製造分野、
LD、CDなどの膜の分野、その他0.2μm〜100
μm程度の膜厚を測定する一方法に分光光度計を使用す
るものがある。この分光光度計を用いた膜厚測定は、図
6に示すように、屈折率nの被測定膜1に、分光光度計
より、角度θで波長の連続的に変化する光を照射し、被
測定膜1の上面と下面で反射する干渉波によって生じる
干渉スペクトルを測定し、その干渉スペクトルに次式を
適用して被測定膜1の膜厚dを求めるものである。
2. Description of the Related Art Generally, a nitride film,
Semiconductor manufacturing field where films such as photoresist films are formed,
In the field of membranes such as LD and CD, other 0.2 μm-100
One method for measuring a film thickness of about μm is to use a spectrophotometer. In the film thickness measurement using this spectrophotometer, as shown in FIG. 6, the film to be measured 1 having a refractive index n is irradiated with light whose wavelength continuously changes at an angle θ from the spectrophotometer to measure the film thickness. The interference spectrum generated by the interference wave reflected on the upper surface and the lower surface of the measurement film 1 is measured, and the following formula is applied to the interference spectrum to obtain the film thickness d of the film to be measured 1.

【0003】[0003]

【数1】 [Equation 1]

【0004】ただし、上記したようにnは屈折率、θは
被測定膜への入射角、Δmは図7に例示する干渉スペク
トルの計算範囲(λ’S とλ’E 間)の山の数、λ1
に対応する波長、λ2 は(3)に対応する波長であ
る。
However, as described above, n is the refractive index, θ is the angle of incidence on the film to be measured, and Δm is the number of peaks in the calculation range (between λ ′ S and λ ′ E ) of the interference spectrum illustrated in FIG. , Λ 1 is the wavelength corresponding to, and λ 2 is the wavelength corresponding to (3).

【0005】[0005]

【発明が解決しようとする課題】上記した従来の分光光
度計を用いた膜厚測定ではλ’E からλ’S までの計算
波長範囲内では、被測定膜の屈折率nが一定値であると
して、膜厚を算出している。しかしながら、実際には、
計算波長内で屈折率が一定でない膜が多い。屈折率が一
定でない膜の場合には、従来の計算方法では、精密な膜
厚が測定できない、という問題がある。
In calculating the wavelength range of 'from E lambda' THE INVENTION It is an object to provide a process in the film thickness measurement using a conventional spectrophotometer the lambda to S is the refractive index n of the measured film is a constant value The film thickness is calculated as However, in practice,
Many films do not have a constant refractive index within the calculated wavelength. In the case of a film whose refractive index is not constant, there is a problem that the conventional calculation method cannot measure a precise film thickness.

【0006】この発明は、上記問題点に着目してなされ
たものであって、波長によって屈折率が変化する試料で
あっても、従来より精度よく測定できる膜厚測定装置を
提供することを目的としている。
The present invention has been made in view of the above problems, and an object of the present invention is to provide a film thickness measuring apparatus capable of measuring a sample with a higher refractive index than a conventional one even if the refractive index changes depending on the wavelength. I am trying.

【0007】[0007]

【課題を解決するための手段及び作用】この発明の膜厚
測定装置は、被測定膜に所定角度で波長の連続的に変化
する光を照射し、得られる反射波より、被測定膜の干渉
スペクトルを測定する分光光度計と、前記干渉スペクト
ルに、計算するための波長範囲を指定する波長範囲指定
手段と、前記指定された波長範囲を所望個数の区間に分
割指定する区間指定手段と、前記各区間におけるそれぞ
れの被測定膜の平均屈折率を入力する屈折率入力手段
と、屈折率を含む所定式に、前記各区間毎の平均屈折率
を適用して各区間毎に、膜厚を算出する区間膜厚算出手
段と、算出された区間膜厚の平均値を算出して被測定膜
厚を算出する手段とから構成されている。
The film thickness measuring apparatus of the present invention irradiates a film to be measured with light whose wavelength continuously changes at a predetermined angle, and from the reflected wave obtained, interference of the film to be measured is obtained. A spectrophotometer for measuring a spectrum, the interference spectrum, a wavelength range designating means for designating a wavelength range for calculation, a section designating means for designating a division of the designated wavelength range into a desired number of sections, and The refractive index input means for inputting the average refractive index of each film to be measured in each section, and the average refractive index for each section is applied to a predetermined expression including the refractive index to calculate the film thickness for each section. And a means for calculating an average value of the calculated section thicknesses to calculate a measured film thickness.

【0008】この膜厚測定装置では、分光光度計によっ
て被測定膜の干渉スペクトルが測定され、さらにその干
渉スペクトルに対し、計算範囲と、所望の区間が設定さ
れ、区分毎に屈折率の平均値が入力され、その各平均値
を膜厚算出出力に適用し、得られた各区間毎の膜厚の平
均値を被測定膜厚とするものであるから、全体の計算範
囲に亘り、屈折率一定とするのではなく、各区間毎に屈
折率を考慮するものであり、従来より、精度よく膜厚を
測定することができる。
In this film thickness measuring device, an interference spectrum of the film to be measured is measured by a spectrophotometer, and a calculation range and a desired section are set for the interference spectrum, and an average value of the refractive index is set for each section. Is input, and each average value is applied to the film thickness calculation output, and the average value of the film thickness of each obtained section is used as the film thickness to be measured, so that the refractive index is calculated over the entire calculation range. The thickness is not fixed, but the refractive index is taken into consideration for each section, so that the film thickness can be measured more accurately than before.

【0009】[0009]

【実施例】以下、実施例により、この発明をさらに詳細
に説明する。図1は、この発明が実施される膜厚測定装
置のハード構成を示すブロック図である。この実施例装
置は、被測定膜の干渉スペクトルを測定する分光光度計
11と、測定された干渉スペクトルや、膜厚測定のため
の演算値を記憶するRAM12と、膜厚測定のための種
々の制御、演算を行うCPU13と、CPU13のプロ
グラムや、演算式、定数等を記憶するROM14と、干
渉スペクトルを二次元表示するディスプレイ15と、操
作入力部16を少なくとも備えている。操作入力部16
は、計算範囲を指定する機能16a、計算範囲を分割す
る区間を指定する機能16b、及び各区間毎に平均屈折
率を入力する機能16cを備えている。これらの機能に
ついては後述する。なお、操作入力部16の具体的入力
手段としては、よく知られたキー、カーソル、アイコン
等が使用される。
The present invention will be described in more detail with reference to the following examples. FIG. 1 is a block diagram showing a hardware configuration of a film thickness measuring apparatus according to the present invention. The apparatus of this embodiment includes a spectrophotometer 11 for measuring an interference spectrum of a film to be measured, a RAM 12 for storing the measured interference spectrum and a calculation value for film thickness measurement, and various kinds of film thickness measurement. The CPU 13 includes at least a CPU 13 that performs control and calculation, a ROM 14 that stores a program of the CPU 13, arithmetic expressions, constants, and the like, a display 15 that two-dimensionally displays an interference spectrum, and an operation input unit 16. Operation input unit 16
Has a function 16a for designating a calculation range, a function 16b for designating a section for dividing the calculation range, and a function 16c for inputting an average refractive index for each section. These functions will be described later. Well-known keys, cursors, icons, and the like are used as specific input means of the operation input unit 16.

【0010】次に、上記実施例装置により、被測定膜の
膜厚を測定する場合の動作を、図2に示すフローチャー
トにより説明する。先ず、分光光度計11により、従来
よりよく知られた方法で被測定膜の干渉スペクトルを測
定する(ステップST1)。この干渉スペクトルは、例
示すると、図3の(a)のように、横軸に波長、縦軸に
反射率をとって表される。干渉波のため、通常振幅状の
波形であるが、膜厚が小さい程、山の数が少なく、測定
できる膜厚の下限は0.2μm程度である。測定した干
渉スペクトルは、RAM12に記憶されるとともに、デ
ィスプレイ15に表示される。
Next, the operation of measuring the film thickness of the film to be measured by the apparatus of the above embodiment will be described with reference to the flow chart shown in FIG. First, the spectrophotometer 11 measures the interference spectrum of the film to be measured by a method well known in the related art (step ST1). For example, this interference spectrum is represented by taking the wavelength on the horizontal axis and the reflectance on the vertical axis as shown in FIG. Because of the interference wave, the waveform is usually amplitude-like, but the smaller the film thickness, the smaller the number of peaks, and the lower limit of the measurable film thickness is about 0.2 μm. The measured interference spectrum is stored in the RAM 12 and displayed on the display 15.

【0011】次に、干渉スペクトルより膜厚を計算する
ための波長範囲Wが指定される。この指定は、操作入力
部16により、例えば、図3の(b)に示す波長λS
λEが入力される(ステップST2)。続いて、計算範
囲Wをいくつの区間(Nとする)に分けるかの指定を操
作入力部16より行う(ステップST3)。図3の
(C)は、図3の(b)の計算範囲Wを、W1 、W2
3 の3つの区間(N=3)に分割した例である。
Next, the wavelength range W for calculating the film thickness from the interference spectrum is designated. This designation is made by the operation input unit 16 by, for example, the wavelength λ S shown in (b) of FIG.
λ E is input (step ST2). Then, the operation input unit 16 is used to specify how many sections (N) to divide the calculation range W into (step ST3). 3C shows the calculation range W of FIG. 3B as W 1 , W 2 ,
This is an example of division into three W 3 sections (N = 3).

【0012】このように、計算範囲をいくつかの区間に
分割するのは、膜厚を算出するパラメータである屈折率
が波長によって相違するものがあるためである。例え
ば、ある試料が波長に対し、図4に示す屈折率の変化が
あるものとすれば、計算範囲Wを、例えばW1 、W2
3 の3区間に分割し、各区間W1 、W2 、W3 の平均
屈折率n1 、n2 、n3 を、各区間における膜厚算出に
使用する。いくつの区間に分割するかは、屈折率の変化
状態により、操作者が適宜選択すればよい。
The reason why the calculation range is divided into several sections is that the refractive index, which is a parameter for calculating the film thickness, differs depending on the wavelength. For example, if a sample has a change in the refractive index shown in FIG. 4 with respect to the wavelength, the calculation range W is, for example, W 1 , W 2 ,
Divided into three sections of W 3, each section W 1, W 2, the average refractive index n 1 of the W 3, n 2, n 3 , using the film thickness calculated in each section. The number of sections to be divided may be appropriately selected by the operator depending on the change state of the refractive index.

【0013】さて、分割区間が指定されると、次にその
各区間毎の屈折率が操作入力部16より入力される(ス
テップST4)。試料の屈折率が図5の(a)に示すも
のであり、計算範囲300nm〜1300nmが600
nm、800nmで、3区間に分割されたとすると、各
区間の屈折率n1 、n2 、n3 が入力される。そして、
これら入力された屈折率ni(i=1、2、3)によ
り、各区間毎の膜厚diを次式より算出する(ステップ
ST5)。
When the divided section is designated, the refractive index for each section is then input from the operation input unit 16 (step ST4). The refractive index of the sample is shown in FIG. 5A, and the calculation range 300 nm to 1300 nm is 600.
If it is divided into three sections of nm and 800 nm, the refractive indices n 1 , n 2 and n 3 of each section are input. And
Based on these input refractive indices ni (i = 1, 2, 3), the film thickness di for each section is calculated by the following equation (step ST5).

【0014】[0014]

【数2】 [Equation 2]

【0015】これに、各区間毎に算出した膜厚d1 、d
2 、d3 が得られる。最後に、各区間毎の膜厚d1 、d
2 、d3 を加算するとともに、その加算値を分割数3
で、除算し、つまり次式の計算により各区間の膜厚の平
均値を求め、被測定膜の膜厚dを算出する(ステップS
T6)。 d=(d1 +d2 +d3 )/3 …(3)
In addition, the film thicknesses d 1 and d calculated for each section
2 and d 3 are obtained. Finally, the film thickness d 1 , d for each section
2 and d 3 are added, and the added value is divided into 3
Then, the average value of the film thickness of each section is calculated by the calculation of the following formula, and the film thickness d of the film to be measured is calculated (step S
T6). d = (d 1 + d 2 + d 3 ) / 3 (3)

【0016】[0016]

【発明の効果】この発明によれば、分光光度計で測定し
た干渉スペクトルの計算範囲をいくつかの区間に分割
し、各区間毎に、平均屈折率を用い、区間毎に膜厚を求
め、これら区間毎の膜厚の平均値をとって、被測定膜の
膜厚とするものであるから、屈折率が波長によって相違
する試料の場合、従来のように、常に一定の屈折率であ
るとして算出する場合に比し、屈折率の変化を測定に反
映でき、より精度の高い測定を行うことができる。
According to the present invention, the calculation range of the interference spectrum measured by the spectrophotometer is divided into several sections, the average refractive index is used for each section, and the film thickness is calculated for each section. Since the average value of the film thickness in each of these sections is taken as the film thickness of the film to be measured, in the case of a sample whose refractive index differs depending on the wavelength, it is assumed that the refractive index is always constant as in the conventional case. Compared with the case of calculation, the change in refractive index can be reflected in the measurement, and more accurate measurement can be performed.

【図面の簡単な説明】[Brief description of drawings]

【図1】この発明が実施される膜厚測定装置のハード構
成を示すブロック図である。
FIG. 1 is a block diagram showing a hardware configuration of a film thickness measuring apparatus in which the present invention is implemented.

【図2】同実施例膜厚測定装置における測定動作を説明
するためのフロー図である。
FIG. 2 is a flow chart for explaining a measuring operation in the film thickness measuring apparatus of the embodiment.

【図3】同実施例膜厚測定装置における計算範囲の区間
分割を説明するための波形図である。
FIG. 3 is a waveform diagram for explaining division of a calculation range into sections in the film thickness measuring apparatus according to the embodiment.

【図4】膜厚を測定する試料の波長に対する屈折率の変
化を例示した図である。
FIG. 4 is a diagram exemplifying a change in refractive index with respect to a wavelength of a sample whose film thickness is measured.

【図5】区間の指定と、各区間の平均屈折率及び各区間
の膜厚算出の関係を説明するための図である。
FIG. 5 is a diagram for explaining a relationship between designation of a section and calculation of an average refractive index of each section and a film thickness of each section.

【図6】分光光度計による干渉スペクトル測定を説明す
る図である。
FIG. 6 is a diagram illustrating interference spectrum measurement by a spectrophotometer.

【図7】同干渉スペクトルにより、膜厚を測定する原理
式を説明するための図である。
FIG. 7 is a diagram for explaining a principle formula for measuring a film thickness using the same interference spectrum.

【符号の説明】[Explanation of symbols]

1 被測定膜 11 分光光度計 12 RAM 13 CPU 16 操作入力部 1 film to be measured 11 spectrophotometer 12 RAM 13 CPU 16 operation input section

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】被測定膜に所定角度で波長の連続的に変化
する光を照射し、得られる反射波より、被測定膜の干渉
スペクトルを測定する分光光度計と、 前記干渉スペクトルに、計算するための波長範囲を指定
する波長範囲指定手段と、 前記指定された波長範囲を所望個数の区間に分割指定す
る区間指定手段と、 前記各区間におけるそれぞれの被測定膜の平均屈折率を
入力する屈折率入力手段と、 屈折率を含む所定式に、前記各区間毎の平均屈折率を適
用して各区間毎に、膜厚を算出する区間膜厚算出手段
と、 算出された区間膜厚の平均値を算出して被測定膜厚を算
出する手段と、からなることを特徴とする膜厚測定装
置。
1. A spectrophotometer for irradiating a film to be measured with light whose wavelength continuously changes at a predetermined angle, and measuring an interference spectrum of the film to be measured from a reflected wave obtained, a calculation for the interference spectrum. A wavelength range designating means for designating a wavelength range for specifying, a section designating means for designating a division of the designated wavelength range into a desired number of sections, and an average refractive index of each film to be measured in each section are input. Refractive index input means, section thickness calculation means for calculating the film thickness for each section by applying the average refractive index for each section to a predetermined expression including the refractive index, and A film thickness measuring device comprising: a means for calculating an average value to calculate a film thickness to be measured.
JP2220093A 1993-02-10 1993-02-10 Measuring apparatus for thickness of film Pending JPH06235615A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2220093A JPH06235615A (en) 1993-02-10 1993-02-10 Measuring apparatus for thickness of film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2220093A JPH06235615A (en) 1993-02-10 1993-02-10 Measuring apparatus for thickness of film

Publications (1)

Publication Number Publication Date
JPH06235615A true JPH06235615A (en) 1994-08-23

Family

ID=12076162

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2220093A Pending JPH06235615A (en) 1993-02-10 1993-02-10 Measuring apparatus for thickness of film

Country Status (1)

Country Link
JP (1) JPH06235615A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002267416A (en) * 2001-03-08 2002-09-18 Olympus Optical Co Ltd Surface defect inspecting device
JP2009283868A (en) * 2008-05-26 2009-12-03 Tokyo Seimitsu Co Ltd Method for detecting polishing end point

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002267416A (en) * 2001-03-08 2002-09-18 Olympus Optical Co Ltd Surface defect inspecting device
JP4632564B2 (en) * 2001-03-08 2011-02-16 オリンパス株式会社 Surface defect inspection equipment
JP2009283868A (en) * 2008-05-26 2009-12-03 Tokyo Seimitsu Co Ltd Method for detecting polishing end point

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