JPH06224603A - Magnetostatic wave s/n enhancer - Google Patents

Abstract

PURPOSE:To reduce number of components by forming two magnetostatic filters on one and same dielectric base and adopting a microstrip line structure capable of phase inversion synthesis and to make the size of the enhancer small by integrating the two magnetostatic filters. CONSTITUTION:Magnetostatic filters 4A, 4B are formed on one and same dielectric base 1, a microstrip line pattern 2 is formed so that high frequency signals are propagated in the same direction through input/output transducers of the magnetostatic filter 4A and high frequency signals are propagated in opposite directions through input/output transducers of the magnetostatic filter 4B, an output signal of the magnetostatic filter 4B has an opposite phase to that of an output signal of the magnetostatic filter 4A, then the output signals of the magnetostatic filters 4A, 4B are synthesized.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an S / N enhancer capable of improving the ratio of a desired wave signal (Signal) and noise (Noise) by utilizing the non-linear operation of magnetostatic waves, and particularly The present invention relates to a miniaturized configuration of a magnetostatic wave S / N enhancer configured using two magnetostatic wave filters.

[0002]

2. Description of the Related Art Conventionally, as a magnetostatic wave S / N enhancer constructed by using two microwave magnetostatic wave filters, the configuration of Japanese Patent Laid-Open No. 4-123502 is known.

FIG. 2 shows a conventional example of a magnetostatic wave S / N enhancer constructed by using two microwave band magnetostatic wave filters. In this conventional example, the magnetostatic wave S / N enhancer is 2
Two microwave band magnetostatic wave filters 20A, 20B and 2
Two directional couplers 21A and 21B and a variable attenuator 22
And a variable delay line 23. Further, although not shown, an external magnetic field applying means is also required to operate the magnetostatic wave filters 20A and 20B, resulting in a large-sized device configuration.

Here, the configuration of the magnetostatic wave filters 20A and 20B, which are the core of the magnetostatic wave S / N enhancer, is generally that shown in FIGS. In this magnetostatic wave filter, an input-side microstrip line 30A and an output-side microstrip line 30B are provided on a dielectric substrate 31 such as alumina, and a YIG (yttrium.yg.
The ferrimagnetic film 33 of iron / garnet) is provided in the region on the substrate including both the microstrip lines 30A and 30B. The microstrip lines 30A and 30B in contact with the ferrimagnetic film 33 function as microstrip transducers that excite magnetostatic waves. In addition,
The back surface of the dielectric substrate 31 is a full-surface conductor 34, and the ground side of each of the lines 30A and 30B is connected. Further, the externally applied magnetic field Hex is in the same plane as the ferrimagnetic film 33 of YIG and in a direction perpendicular to the propagation direction of the magnetostatic wave.

The input / output characteristics of the magnetostatic wave filters shown in FIGS. 3 and 4 have a direct proportional relationship between the input level and the output level when the input level is below a certain value, but there is saturation in the conversion of electromagnetic waves into magnetostatic waves. Due to this, even if the input level exceeds a certain value, the output level cannot increase and exhibits a non-linear characteristic. It is to be noted that the magnetostatic wave filter exhibits such non-linear characteristics in a specific frequency band determined by the characteristics of the ferrimagnetic film, the strength of the externally applied magnetic field, etc. Have characteristics.

The operation principle of the magnetostatic wave S / N enhancer in the conventional example shown in FIG. 2 will be briefly described as follows. First, the microwaves input from the input terminal 24 are distributed at different power ratios by the first directional coupler 21A, and separate magnetostatic wave filters 20A and 20B are provided.
Is input to. The output signal of one magnetostatic wave filter 20A is adjusted in amplitude through the variable attenuator 22, the output signal of the other magnetostatic wave filter 20B is phase-inverted by the variable delay line 23, and again by the directional coupler 21B on the output side. It is combined and output to the output terminal 25.

Now, considering the case where a low level signal (ie, noise) is input to the magnetostatic wave S / N enhancer of the conventional example, the two magnetostatic wave filters 20A and 20B both perform linear operation, so that variable attenuation is performed. By controlling the amount of attenuation of the device 22 and the phase delay in the variable delay line 23, the two signals are canceled by the output side directional coupler 21B, and only a very small signal appears at the output terminal 25.

However, when a high level signal (desired signal) is input, the power is distributed at different power ratios in the input side directional coupler 21A, so that one magnetostatic wave filter reaches the saturation region. Therefore, the two signals are not canceled by the output side directional coupler 21B, and a relatively large level signal appears at the output terminal 25. Therefore,
It is possible to realize a function as an S / N enhancer capable of blocking a low level signal and passing a high level signal.

[0009]

By the way, the conventional example shown in FIG. 2 has a large number of constituent elements, so that there is a problem that the apparatus becomes large in size.

In view of the above points, the present invention is necessary in the conventional example by providing two magnetostatic wave filters on the same dielectric substrate and having a microstrip line structure capable of phase inversion synthesis. It is an object of the present invention to provide a magnetostatic wave S / N enhancer in which the delay line is eliminated, the number of components is reduced, and two magnetostatic wave filters are integrated into a single structure to achieve miniaturization.

[0011]

In order to achieve the above object, the magnetostatic wave S / N enhancer of the present invention uses two magnetostatic wave filters having frequency-selective nonlinear amplitude limiting characteristics. The individual magnetostatic wave filters are formed on the same dielectric substrate, the input / output transducers of the first magnetostatic wave filter are arranged so that high-frequency signals propagate in the same direction, and the input / output transducers of the second magnetostatic wave filter are A microstrip line pattern is formed on the dielectric substrate so that high frequency signals propagate in mutually opposite directions, and the output signal of the second magnetostatic wave filter is set as an opposite phase with respect to the output signal of the first magnetostatic wave filter. The output signals of the first and second magnetostatic wave filters are combined.

[0012]

In the magnetostatic wave S / N enhancer of the present invention,
A microstrip line pattern in which the input / output transducers of the first magnetostatic wave filter propagate high frequency signals in the same direction, and the input / output transducers of the second magnetostatic wave filter propagate high frequency signals in the opposite directions. With the above configuration, the output signal of the second magnetostatic wave filter can be made to have an opposite phase to the output signal of the first magnetostatic wave filter. Therefore, the output signals of the first and second magnetostatic wave filters are subjected to anti-phase synthesis without passing through a delay line, which has been conventionally required, to suppress unnecessary signals such as low-level noise and to suppress S / N. Can be improved. Further, since the number of constituent elements can be reduced, the device can be downsized, which is advantageous in manufacturing.

[0013]

Embodiments of the magnetostatic wave S / N enhancer according to the present invention will be described below with reference to the drawings.

In FIG. 1, a microstrip line pattern 2 is formed on the main surface of a dielectric substrate 1 made of alumina or the like having a full-face conductor on the back surface by thin film technology or the like, and a YIG ferri layer is formed on the microstrip line pattern 2. By disposing the GGG plates 3A and 3B on which the magnetic film is formed so that the ferrimagnetic film contacts the microstrip line pattern 2, two microwave band magnetostatic wave filters 4A and 4B having the same input / output characteristics are formed. There is. That is, in the magnetostatic wave filter 4A, a YIG ferrimagnetic film formed on the GGG plate 3A is provided in a region of the microstrip line pattern 2 on the substrate including the input side microstrip line 2A and the output side microstrip line 2B. The portions of the microstrip lines 2A and 2B that are in contact with the ferrimagnetic film and are parallel to each other function as microstrip transducers that excite magnetostatic waves. Similarly, the magnetostatic wave filter 4B is an input side microstrip line 2C of the microstrip line pattern 2.
In addition, the YIG ferrimagnetic film formed on the GGG plate 3B is provided in the region on the substrate including the output side microstrip line 2D, and the mutually parallel portions contacting the ferrimagnetic film of the microstrip lines 2C and 2D are It functions as a microstrip transducer that excites magnetostatic waves. Here, the externally applied magnetic field Hex is in a direction perpendicular to the propagation direction of the magnetostatic wave of each magnetostatic wave filter 4A, 4B in the same plane as the ferrimagnetic film of YIG. Further, the ground electrode portions 5A, 5B, 5C are connected to the entire conductors on the back surface of the dielectric substrate 1 by through holes, and one end of the microstrip lines 2A, 2C (on the side opposite to the input end) is connected to the ground electrode portion 5A. Are connected, one end of the output side microstrip line 2B (the side opposite to the output end) is connected to the ground electrode part 5B, and the output side microstrip line 2D is connected to the ground electrode part 5C. As a result, in the magnetostatic wave filter 4A, the input and output transducers propagate high-frequency signals in the same direction (arrows a and b), whereas in the magnetostatic wave filter 4B, the input and output transducers move in opposite directions (arrows). The high-frequency signal propagates in c and arrow d), and the phase of the output signal of the magnetostatic wave filter 4B is inverted with respect to the output signal of the magnetostatic wave filter 4A.

The microstrip line pattern 2
Is a microstrip line 7 whose one end is the input end 6.
And the microstrip line 9 with one end serving as the output end 8
, And the microstrip line 7 branches into the input-side microstrip lines 2A and 2C (which constitutes a distributor). In addition, the output side microstrip line 2
B and 2D are commonly connected to the microstrip line 9 (which constitutes a combiner). Further, a resistive film pattern 11A as an attenuator pattern is provided at an intermediate position of the input side microstrip line 2C of the magnetostatic wave filter 4B.
However, a resistance film pattern 11B as an attenuator pattern is provided on the output side microstrip line 2B of the magnetostatic wave filter 4A.
Are formed on the dielectric substrate 1.

Input side microstrip line 2
The lengths of A and 2C are set to be substantially equal so that the phase shift due to the line length does not occur. Similarly, the lengths of the output side microstrip lines 2B and 2D are also shifted from each other due to the line length. Are set to be substantially equal to each other so as not to occur.

In the configuration of the above embodiment, the microwave input from the input end 6 has the resistive film pattern 11A inserted in the middle of the input side microstrip line 2C, so that the input side microstrip lines 2A and 2C. Are distributed at different power ratios and are input to the magnetostatic wave filters 4A and 4B having the same input / output characteristics. At this time, in the magnetostatic wave filter 4A, while the input / output transducers propagate high-frequency signals in the same direction (arrow a and arrow b), the magnetostatic wave filter 4B has its input / output transducers in opposite directions (arrow c and arrow b). Since the high-frequency signal propagates in d), the output signals of the magnetostatic wave filters 4A and 4B have opposite phases (the phases are shifted by 180 degrees). Then, the output signal of the magnetostatic wave filter 4A and the output signal of the magnetostatic wave filter 4B whose amplitudes are adjusted through the resistance film pattern 11B and the output signal of the magnetostatic wave filter 4B are combined in mutually opposite phases and output to the output end 8.

Now, considering the case where a low level signal (ie, noise) is input to the magnetostatic wave S / N enhancer of the embodiment, the two magnetostatic wave filters 4A and 4B both operate linearly, so that the resistance film By setting the attenuation amounts of the patterns 11A and 11B in advance to appropriate values (in principle, if the two magnetostatic wave filters have the same input / output characteristics, the resistance film patterns 11A and 11B should have the same attenuation amount. The output signals from the two magnetostatic wave filters 4A and 4B cancel each other out when the outputs of the output-side microstrip lines 2B and 2D are combined, and only an extremely small signal appears at the output end 8.

However, when a high level signal (desired signal) is input, the input side microstrip line 2
Since the electric power is distributed to A and 2C at different electric power ratios, one of the magnetostatic wave filters 4A reaches the saturation region and the output signals of the magnetostatic wave filters 4A and 4B appearing on the output side microstrip lines 2B and 2D. Are not canceled out, and a relatively high level signal appears at the output terminal 8. Therefore, a function as an S / N enhancer that blocks low-level signals and allows high-level signals to pass can be realized in a compact structure with no delay line or directional coupler.

Although the embodiment of the present invention has been described above, it is obvious to those skilled in the art that the present invention is not limited to this and various modifications and changes can be made within the scope of the claims. Let's do it.

[0021]

As described above, the magnetostatic wave S of the present invention is used.
According to the / N enhancer, by constructing two magnetostatic wave filters on the same dielectric substrate and using a microstrip line structure capable of phase inversion synthesis, the delay line required in the conventional example is eliminated. It is possible to reduce the number of components and achieve a large size reduction.

[Brief description of drawings]

FIG. 1 is a plan view showing an embodiment of a magnetostatic wave S / N enhancer according to the present invention.

FIG. 2 is a configuration diagram showing a conventional magnetostatic wave S / N enhancer.

FIG. 3 is a plan view showing a magnetostatic wave filter used in a conventional magnetostatic wave S / N enhancer.

FIG. 4 is a front sectional view of the same.

[Explanation of symbols]

 1 Dielectric Substrate 2 Microstrip Line Pattern 2A, 2C Input Side Microstrip Line 2B, 2D Output Side Microstrip Line 3A, 3B GGG Plate 4A, 4B Magnetostatic Wave Filter 5A, 5B, 5C Ground Electrode 6 Input End 8 Output End 11A, 11B Resistive film pattern

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[Procedure amendment]

[Submission date] October 13, 1993

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[Claims]

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[0011]

In order to achieve the above object, the magnetostatic wave S / N enhancer of the present invention uses two magnetostatic wave filters having frequency-selective nonlinear amplitude limiting characteristics. The individual magnetostatic wave filters are formed on the same dielectric substrate, the input / output transducers of the first magnetostatic wave filter are arranged so that high-frequency signals propagate in the same direction, and the input / output transducers of the second magnetostatic wave filter are The transmission lines on the dielectric substrate are configured so that high-frequency signals propagate in mutually opposite directions, and the output signal of the second magnetostatic wave filter is opposite in phase to the output signal of the first magnetostatic wave filter. And the output signals of the second magnetostatic wave filter are combined. In addition, the two magnetostatic wave filters
Of the first side of the output line of one of the magnetostatic wave filters
Place the attenuator on the input transmission line of the other magnetostatic wave filter.
Two attenuators are formed on the dielectric substrate, respectively.
You may

[Procedure 3]

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In FIG. 1, a micro-cross line pattern 2 as a transmission line is formed on the main surface of a dielectric substrate 1 made of alumina or the like having a full surface conductor on the back surface by a thin film technique or the like. By disposing the GGG plates 3A and 3B having the YIG ferrimagnetic film formed on the stripline pattern 2 so that the ferrimagnetic film is in contact with the microstripline pattern 2, two microwave bands having the same input / output characteristics can be obtained. Magnetic wave filters 4A and 4B are configured. That is, the magnetostatic wave filter 4A corresponds to the input side microstrip line 2 of the microstrip line pattern 2.
A ferrimagnetic film of YIG formed on the GGG plate 3A is provided in a region on the substrate including the A and the output side microstrip lines 2B.
The mutually parallel portions in contact with the ferrimagnetic film function as a microstrip transducer that excites magnetostatic waves. Similarly, in the magnetostatic wave filter 4B, a YIG ferrimagnetic film formed on the GGG plate 3B is formed in a region of the microstrip line pattern 2 on the substrate including the input side microstrip line 2C and the output side microstrip line 2D. The parallel strips of the microstrip lines 2C and 2D, which are in contact with the ferrimagnetic film, function as microstrip transducers that excite magnetostatic waves. Here, the externally applied magnetic field Hex is Y
Each magnetostatic wave filter 4 in the same plane as the ferrimagnetic film of the IG
The direction is perpendicular to the propagation directions of the magnetostatic waves A and 4B. The ground electrode portions 5A, 5B and 5C are connected to the entire conductors on the back surface of the dielectric substrate 1 by through holes, and the microstrip line 2 is connected to the ground electrode portion 5A.
One end of A and 2C (opposite side of input end) is connected, one end of output side microstrip line 2B (opposite side of output end) is connected to ground electrode part 5B, and ground electrode part 5C
The output side microstrip line 2D is connected to. As a result, in the magnetostatic wave filter 4A, the input / output transducers propagate high-frequency signals in the same direction (arrow a and arrow b), but in the magnetostatic wave filter 4B, the input / output transducers move in opposite directions (arrows). The high-frequency signal propagates in c and arrow d), and the phase of the output signal of the magnetostatic wave filter 4B is inverted with respect to the output signal of the magnetostatic wave filter 4A.

Claims (2)

[Claims] 1. A magnetostatic wave S / N enhancer using two magnetostatic wave filters having frequency-selective nonlinear amplitude limiting characteristics, wherein the first and second magnetostatic wave filters are formed on the same dielectric substrate. The dielectric material so that the input / output transducers of the first magnetostatic wave filter propagate high frequency signals in the same direction, and the input / output transducers of the second magnetostatic wave filter propagate high frequency signals in the opposite directions. A microstrip line pattern is formed on the substrate, and the output signal of the second magnetostatic wave filter is made to have an opposite phase to the output signal of the first magnetostatic wave filter, and the output signals of the first and second magnetostatic wave filters are combined with each other. A magnetostatic wave S / N enhancer characterized by being synthesized. 2. A first attenuator pattern is provided on the output side microstrip line of the first magnetostatic wave filter, and a second attenuator pattern is provided on the input side microstrip line of the second magnetostatic wave filter. The magnetostatic wave S / N enhancer according to claim 1, which is formed on each body substrate.