JPH06220621A - Device for forming film by sputtering - Google Patents

Abstract

PURPOSE:To stably form a high grade thin film. CONSTITUTION:A partition wall 23W formed with nozzle 24 is interposed between an electric discharge chamber 10 and a film formation chamber 2. Since it becomes difficult for gaseous Ar to flow from the electric discharge chamber 10 into the film formation chamber 2, when the internal pressure of the electric discharge chamber 10 is increased to the pressure required to cause electric discharge, the flow rate of gaseous Ar can be reduced as compared with that in a conventional device and film formation is carried out in the film formation chamber 2 under reduced internal pressure. Molecules of gas can be inhibited from being incorporated into a thin film and a dense crystalline thin film can be formed.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sputtering type film forming apparatus for forming a thin film on a substrate by causing a carrier gas to flow sputtered particles produced by sputtering a target toward a substrate.

[0002]

2. Description of the Related Art As a conventional sputtering type film forming apparatus of this kind, for example, Technical Report ED88-2 of the Institute of Electrical Communication.
4 (1988), page 15. This conventional film forming apparatus will be described with reference to FIG.

FIG. 12 is a sectional view showing a schematic structure of a conventional sputtering type film forming apparatus. In the figure, reference numeral 1 denotes a chamber for film formation, and a film formation chamber 2 in the chamber 1 is equipped with a film formation substrate 3. Reference numeral 4 denotes an exhaust device for reducing the pressure inside the film forming chamber 2 and a discharge chamber described later to maintain a predetermined pressure. The exhaust device 4 is composed of a rotary pump and an oil diffusion pump.

Reference numeral 5 is a discharge device for generating sputtered particles. The discharge device 5 includes a cylindrical target 6, a discharge gas introduction member 7 that closes an opening at one end of the target 6, and a water-cooled cooling member 8 mounted on the outer periphery of the target 6. The target 6 and the discharge gas introducing member 7 are connected to a power source (not shown). Reference numeral 9 is an insulating plate for electrically isolating the target 6 from the chamber 1 and the discharge gas introducing member 7.

The target 6 is made of copper, iron or titanium and is positioned so that its hollow portion faces the introduction opening 1a of the chamber 1. The substrate 3 is arranged at a position facing the hollow portion of the target 6.

The discharge gas introducing member 7 is formed in a substantially disc shape, and a discharge gas introducing port 7a is opened in a portion corresponding to the hollow portion of the target 6. This discharge gas inlet 7a
Is connected to an argon gas supply source (not shown) via a tube portion 7b formed integrally with the discharge gas introducing member 7 and a mass flow controller (not shown).

That is, in the discharge device 5 thus formed, the discharge chamber 10 communicated with the film formation chamber 2 through the introduction opening 1a of the chamber 1 in the hollow portion of the target 6.
Will be formed.

Next, a procedure for forming a thin film on the substrate 3 by the conventional sputtering type film forming apparatus configured as described above will be described. First, the substrate 3 is mounted in the film forming chamber 2, and the film forming chamber 2 and the discharge chamber 10 are pre-evacuated by the exhaust device 4 so that the pressure becomes 2 × 10 ⁻⁵ Torr or less. Then, argon gas as a carrier gas is supplied from the discharge gas inlet 7a to the discharge chamber 10 through the mass flow controller.
To introduce. By doing so, the argon gas flows from the discharge chamber 10 into the chamber 1 (film forming chamber 2) through the introduction opening 1a.

After that, by discharging the argon gas by the exhaust device 4, the flow rate of the argon gas flowing from the discharge chamber 10 into the film forming chamber 2 is made constant, and in this state, the discharge gas introducing member 7 and the chamber which are at the ground potential. A negative voltage with respect to 1 is applied to the target 6. When the argon gas flow is generated in this way, the pressure in the film forming chamber 2 and the discharge chamber 10 is increased to about 1 Torr.

When the voltage is applied to the target 6 in this way, glow discharge occurs in the discharge chamber 10. If the argon gas flow rate is 200cc / min and the pressure is 1 Torr,
Approximately 3 if a copper target 6 is used
Discharge is stable at a voltage of 50 V, about 330 V for iron, and about 250 V for titanium.

When a discharge is generated in the discharge chamber 10 as described above, the inner peripheral surface of the target 6 is sputtered,
Sputtered particles 11 are knocked out from the target 6.
Then, the sputtered particles 11 are made to flow into the film forming chamber 2 together with the argon gas flowing from the discharge chamber 10 into the film forming chamber 2,
Deposit on the substrate 3. Thus, the sputtered particles 11 are deposited on the substrate 3 to form a thin film.

[0012]

However, the conventional film forming apparatus having the above-mentioned structure has a problem that the quality of the formed thin film tends to be low. This is because it is necessary to increase the pressure in the discharge chamber 10 to a pressure at which discharge easily occurs, and the film formation chamber 2 communicating with the discharge chamber 10 has the same pressure (1
Torr).

That is, as described above, when film formation is performed in a state where the pressure is relatively high (there are many argon molecules in the film forming chamber 2), gas molecules (1 million atomic layers) per second on the substrate surface ( Argon molecules) collide with each other, and a part of them is adsorbed and stays on the surface of the thin film. Since the thin film is formed while taking in these gas molecules, it is difficult for the crystal to become dense and the film quality becomes poor.

Further, since the chamber 1 and the discharge gas introducing member 7 are used as one electrode in the conventional film forming apparatus,
Sputtering also occurs in the chamber 1 and the discharge gas introducing member 7, and the metal material forming the chamber 1 and the discharge gas introducing member 7 is mixed as an impurity in the thin film.

Further, in the discharge device 5 used in the conventional film forming apparatus, the discharge pressure,
Since discharge changes to arc discharge due to fluctuations in applied voltage, there is a restriction on the range of discharge pressure and discharge power for stably generating uniform discharge. That is, the discharge tends to concentrate on the discharge gas introducing member 7 side. For this reason,
The amount of sputtered particles 11 knocked out from the target 6 becomes difficult to be constant.

The present invention has been made to solve such a problem, and an object thereof is to obtain a sputtering type film forming apparatus capable of stably forming a high quality thin film.

[0017]

A sputtering type film forming apparatus according to a first aspect of the present invention is provided with a partition having a nozzle formed between a discharge chamber and a film forming chamber.

In the sputtering type film forming apparatus according to the second aspect of the invention, a partition wall is provided between the discharge chamber and the film forming chamber, the nozzle having a small diameter opening is formed, and the partition wall is a part of the wall of the discharge chamber. The wall forming the discharge chamber is formed by a target and a dielectric material having a low sputtering rate.

In the sputtering type film forming apparatus according to the third aspect of the present invention, a partition wall provided with nozzles is provided between the discharge chamber and the film forming chamber, and at least the outer peripheral wall of the discharge chamber in the discharge device has a sputtering rate. It is formed of a low dielectric material, and the sputtering electrode is arranged on the outer peripheral portion of this outer peripheral wall.

A sputtering type film forming apparatus according to a fourth aspect of the present invention is the sputtering type film forming apparatus according to any one of the sputtering type film forming apparatuses according to the first to third aspects of the present invention, wherein the target is provided with irregularities. It is a thing.

A sputtering type film forming apparatus according to a fifth aspect of the present invention is the sputtering apparatus according to the first aspect of the present invention.
A filament for emitting thermoelectrons and an electron acceleration grid are provided on the substrate side of the nozzle, and an ionization device for ionizing sputtered particles is provided.

[0022]

According to the first aspect of the present invention, it is difficult for the carrier gas to flow from the discharge chamber into the film forming chamber. Therefore, when the pressure in the discharge chamber is increased to the pressure required for generating discharge, the flow rate of the carrier gas is conventionally reduced. Can be less than the device.

According to the second aspect of the invention, as in the first aspect of the invention, the flow rate of the carrier gas can be made smaller than that in the conventional device in order to increase the pressure of the discharge chamber to the pressure required for generating the discharge, and only the target is used. Sputtered particles are generated from.

According to the third aspect of the invention, as in the first aspect of the invention, the flow rate of the carrier gas can be reduced when increasing the pressure of the discharge chamber to the pressure necessary for the discharge to occur, and the dielectric can be used. A discharge is generated between the electrodes via the electrodes or between the electrodes via the dielectric and the target, and is generated over almost the entire area of the discharge chamber.

According to the fourth aspect of the invention, since the target has a large number of edge portions, high-density plasma is generated around the edge portion, and gas ions that sputter the target increase. In addition, the surface area of the target is increased, so that the amount of sputtered particles is increased.

According to the fifth aspect of the invention, as in the first aspect of the invention, in increasing the pressure of the discharge chamber to the pressure necessary for generating discharge, the flow rate of the carrier gas can be made smaller than that of the conventional device, and the discharge chamber can be reduced. The sputtered particles flowing from the film to the film forming chamber are activated.

[0027]

【Example】

Example 1. Hereinafter, the first embodiment will be described in detail with reference to FIG. FIG. 1 is a sectional view showing a schematic configuration of a sputtering type film forming apparatus according to the first invention. In the figure, the same or equivalent members as those described in FIG. 12 are designated by the same reference numerals, and detailed description thereof will be omitted.

In FIG. 1, reference numeral 21 is a discharge device for generating sputtered particles, which is shown in FIG. 12 except that the discharge gas introduction member 7 is provided with a cylindrical electrode 22. It has the same structure as. The cylindrical electrode 22 is a cylindrical target 6
Of the target 6 and the center axis of the target 6 are the same.

In the chamber 1 in which the discharge device 21 is mounted, a partition wall 23 is formed at a portion between the discharge chamber 10 and the film forming chamber 2. The partition wall 23 has a nozzle 24 having a small-diameter opening formed in a portion corresponding to the center of the discharge chamber 10 (center of the target 6).

Next, the procedure for forming a thin film on the substrate 3 by the film forming apparatus thus configured will be described. First, the substrate 3 is mounted in the chamber 1, and the inside of the chamber 1 (the film forming chamber 2) and the inside of the discharge chamber 10 are decompressed by the exhaust device 4 so as to have a high vacuum. After that, argon gas as a carrier gas is supplied to the gas introduction port 7 of the discharge device 21.
It is introduced into the discharge chamber 10 from a.

At this time, the discharge chamber 10 and the film forming chamber 2 are only communicated with each other through the nozzle 24, and it is difficult for the argon gas to flow into the film forming chamber 2 from the discharge chamber 10. Is kept higher than the pressure in the film forming chamber 2. Then, a relatively high-speed argon gas flow is generated from the nozzle 24 in the range shown by the broken line in FIG. For example, the inner diameter of the nozzle 24 is 2 mm and the passage length is 2 m.
When the flow rate of the argon gas is 25 cc / min and the exhaust flow rate of the exhaust device 4 is 3000 l / s, the pressure of the discharge chamber 10 is 1 Torr, whereas the pressure of the film forming chamber 2 is 10 ^-4.
Become Torr. By doing so, the number of gas molecules colliding with the surface of the substrate 3 per second can be reduced to 100 atomic layers.

After introducing the argon gas into the discharge chamber 10 as described above, the discharge is caused while continuing the exhaust by the exhaust device 4. This discharge is connected to earth potential either of the target 6 and the cylindrical electrode 22, generated by applying an AC voltage having a frequency 2 MH _Z to the other. The distance between the inner surface of the target 6 and the outer peripheral surface of the cylindrical electrode 22 was 2 cm.

The sputtered particles 11 knocked out from the target 6 by this discharge are the kinetic energy when sputtered and the kinetic energy given by the argon gas flow and the pressure difference between the discharge chamber 10 and the film forming chamber 2. And are discharged into the film forming chamber 2 through the nozzle 24. At this time, the sputtered particles 11 are emitted toward the substrate 3 with directivity.

When the sputtered particles 11 pass through the nozzle 24 and flow into the film forming chamber 2, the sputtered particles 11
Part of it is condensed by the adiabatic expansion of argon gas,
Massive clusters called clusters are formed. This cluster is indicated by reference numeral 25 in FIG.

As described above, the sputtered particles 11 and the clusters 25 discharged into the film forming chamber 2 through the nozzle 24 are deposited on the substrate 3 to form a thin film.

Therefore, according to the film forming apparatus of the first aspect of the invention configured as described above, since the partition wall 23 and the nozzle 24 are provided between the discharge chamber 10 and the film forming chamber 2, the argon gas is generated in the discharge chamber. Since it becomes difficult to flow from 10 into the film forming chamber 2,
When increasing the pressure of the discharge chamber 10 to the pressure necessary for generating the discharge, the flow rate of the argon gas can be reduced as compared with the conventional device. Therefore, the number of gas molecules that collide with the surface of the substrate 3 can be reduced as much as possible.

Example 2. In addition, in the above-described embodiment, an example in which electric discharge is generated between the cylindrical target 6 and the cylindrical electrode 22 has been described. However, the electrode is formed in a cylindrical shape and the target is formed in a cylindrical shape to form the cylindrical shape. Even if it is arranged in the hollow part of the electrode and discharge is generated between the cylindrical target and the cylindrical electrode, the same effect can be obtained.

Example 3. In addition, the electrodes used in the film forming apparatus of Examples 1 and 2 may be formed of a target material, and discharge may be generated between the cylindrical target and the cylindrical target. Even in this case, the same effect as that of each of the above-described embodiments can be obtained. In addition, by not using an electrode composed of a material different from that of the target, it is possible to prevent impurities from being generated due to sputtering of the electrode.

Example 4. Next, the sputtering type film forming apparatus according to the second invention will be described in detail with reference to FIG. FIG. 2 is a sectional view showing a schematic configuration of a sputtering type film forming apparatus according to the second invention. In the figure, the same or equivalent members as those described in FIG. 1 are designated by the same reference numerals, and detailed description thereof will be omitted.

In FIG. 2, reference numeral 26 denotes a discharge device. The discharge device 26 has a cylindrical target 6 and a discharge chamber 10 formed in a hollow portion of the target 6 by being fixed to openings at both ends of the target 6. Cover members 27 and 28, and electrodes 29 and the like facing the discharge chamber 10. The entire discharge device 26 is inserted into the chamber 1 and is supported and fixed to the chamber 1 via a bracket (not shown). This bracket is for the target 6
And the chamber 1 are not electrically connected to each other.

The lid members 27 and 28 are made of quartz, which is a dielectric substance having a low sputtering rate, and the lid member 27 located on the substrate 3 side has a nozzle having a small diameter opening at a position corresponding to the axis of the target 6. 24 are formed. On the other hand, on the lid member 28 located on the side opposite to the substrate 3, the electrode 29 is fixed by penetrating, and the gas introducing pipe 30 for introducing the argon gas into the discharge chamber 10 is fixed by penetrating. The electrode 29 is made of a target material used to form the target 6. The discharge device 26 is positioned and fixed in the chamber 1 with the nozzle 24 of the lid member 27 facing the substrate 3.

According to the film forming apparatus configured as described above,
Since the partition wall (cover member 27) having the nozzle 24 is provided between the discharge chamber 10 and the film formation chamber 2, the flow rate of the argon gas is increased in order to increase the pressure in the discharge chamber 10 to the pressure necessary for generating the discharge. It can be made less than conventional devices. In addition to this, the wall forming the discharge chamber 10 is made up of the target 6 and the lid member 2 made of quartz which is a dielectric material having a low sputtering rate.
Since it is formed of 7 and 28, only the target 6 and the quartz lid members 27 and 28 are directly exposed to the discharge space in the discharge chamber 10. Since quartz is a low-sputtering material, sputtered particles are less likely to be generated from the lid members 27 and 28.

Therefore, the target 6 is placed in the discharge chamber 10.
Since sputtered particles are generated only from the above, it is possible to prevent impurities from mixing into the thin film of the substrate 3. Further, by disposing the discharge device 26 in the chamber 1 as shown in this embodiment, it is possible to reliably prevent the discharge of the discharge to the chamber 1 at the ground potential and the sputtering of the chamber 1. From this point of view, it is possible to prevent impurities from being mixed into the thin film.

Example 5. The sputtering type film forming apparatus according to the third invention will be described in detail with reference to FIGS. FIG. 3 is a sectional view of a discharge device used in a sputtering type film forming apparatus according to the third invention. In the discharge device shown in FIG. 3, all the walls of the discharge chamber are made of a dielectric material. FIG. 4 is a cross-sectional view of a discharge device used in the sputtering type film forming apparatus according to the third invention, and the discharge device shown in the figure is one in which partition walls are formed by targets. Figure 5
Is a cross-sectional view of a discharge device used in a sputtering type film forming apparatus according to the third invention. In the discharge device shown in the figure, all the walls of the discharge chamber are made of a dielectric and electrodes are arranged outside the discharge chamber. Is. In these figures, the same or equivalent members as those described in FIGS. 1 and 2 are designated by the same reference numerals, and detailed description thereof will be omitted.

In FIG. 3, reference numeral 32 is a discharge device, which is a substantially bottomed cylindrical main body 33 made of quartz, which is a dielectric substance having a low sputtering rate.
The main body 33 is composed of a columnar target 34 arranged at the axial center of the main body 33 and fixed through the main body 33, and an electrode 35 and the like installed on the outer peripheral portion of the main body 33. As the chamber in which the discharge device 32 is mounted, the same chamber as the chamber 1 shown in FIG. 2 is used.

The main body 33 is formed by providing a partition wall 33a that closes the bottomed cylindrical opening portion, and the partition wall 33a is formed with a nozzle 24 having a small diameter opening. The formation position of the nozzle 24 is a position facing the axial end surface of the cylindrical target 34. That is, according to this discharge device, the partition wall 33a is formed.
Partition the discharge chamber 10 in the main body 33 from the film forming chamber in the chamber (not shown). With such a structure, as in the embodiment shown in FIGS. 1 and 2,
In order to increase the pressure in the discharge chamber 10 to the pressure required to generate the discharge, the flow rate of the argon gas can be made smaller than that in the conventional device.

The discharge device 32 has a structure in which one of the columnar target 34 and the electrode 35 is set to the ground potential, and an AC voltage is applied to the other.

In the discharge device 32 thus formed,
Electric discharge is generated between the electrode 35 and the target 34 via the main body 33. At this time, silent discharge is generated in the discharge chamber 10, and when the charge generated by the discharge reaches the inner wall surface of the quartz main body 33 interposed between the columnar target 34 and the electrode 35, the surface of the main body 33 is charged. Are accumulated and an opposite electric field is formed to stop the discharge.

Therefore, a fine pulsed discharge is continuously generated in substantially the entire area of the discharge chamber 10, and local concentration of the discharge is prevented. That is, the target 34
The discharge for sputtering is uniformly and stably generated in a wide range over substantially the entire surface of the.

Example 6. In forming the discharge chamber of the discharge device, in addition to forming the entire wall of the discharge chamber with a quartz material as shown in FIG. 3, a partition wall portion is formed with a target as shown in FIG. You can also

In a discharge device indicated by reference numeral 36 in FIG. 4, a quartz main body 33 is formed in a bottomed cylindrical shape.
The target 37 is fixed to the opening of No. 3. The target 37 has a structure that closes the opening of the main body 33, and the nozzle 24 having a small diameter opening is formed in a portion corresponding to the axial center of the main body 33. That is, the target 37
Form a partition that separates the discharge chamber 10 from the film forming chamber in the chamber (not shown).

Even in the discharge device 36 thus formed, discharge is generated between the electrode 35 and the target 37 via the main body 33, so that the same effect as that of the embodiment shown in FIG. 3 can be obtained.

Example 7. The discharge device shown in FIGS. 3 and 4 has a structure in which the target is energized to generate a discharge, but it is also possible not to energize the target as shown in FIG.

In the discharge device indicated by reference numeral 38 in FIG. 5, a target 39 is fixed in a substantially bottomed cylindrical main body 33, and electrodes 40 and 41 are provided on the outer peripheral portion of the main body 33 at intervals in the axial direction of the main body 33. It is installed in advance. The target 39 is formed in a cylindrical shape to be fitted into the inner peripheral portion of the main body 33,
It is fixed to the end of the main body 33 on the side of the partition wall 33a.

Then, the discharge device 38 includes the electrode 4
One of 0 and 41 is grounded and a high frequency voltage is applied to the other. Even with such a configuration, silent discharge is generated in the discharge chamber 10
Since the target 39 placed inside can be sputtered, the same effect as the embodiment shown in FIG. 3 can be obtained.

Example 8. The sputtering type film forming apparatus according to the fourth invention will be described in detail with reference to FIG. FIG. 6 is the fourth
3 is a cross-sectional view of a discharge device used in the sputtering type film forming apparatus according to the invention of FIG. In the discharge device shown in the figure, members other than the target are formed in the same manner as the discharge device shown in FIG. In the figure, the same or similar members as those described in FIG. 3 are designated by the same reference numerals, and detailed description thereof will be omitted.

The target 34 shown in FIG. 6 is formed in a generally cylindrical shape having a bottom, and the cylindrical portion in which the recess 34a is formed faces the interior of the discharge chamber 10 and is fixed to the main body 33 by penetration. . The recess 34a is formed so that its inner diameter is constant. In the cylindrical target 34 thus formed, there are many edge portions 34b where the discharge is concentrated. Therefore, high-density plasma is generated around the edge portion 34b, and the gas ions that sputter the target 34 increase. As a result, the sputtered particles 11 sputtered from the target 34 increase.

Moreover, since the inner surface of the recess 34a is sputtered in addition to the outer peripheral surface and the tip surface of the target 34, the sputtered area is increased. Therefore, the amount of the sputtered particles 11 to be discharged is also increased from this point. You can

The discharge device 32 shown in FIG.
A quartz tube with an inner diameter of 27 mm is used as 3, and the target 34
Is formed by using molybdenum having an outer diameter of 22 mm and an inner diameter of 18 mm, and argon is used as a discharge gas, and a discharge power of about 300 W is injected through a stainless steel electrode of 50 mm in height wound on a quartz tube to perform a test. About 100
When the film formation rate was measured with a crystal oscillator monitor at a distance of mm, a film formation rate of about 300 Å / min could be obtained.

Example 9. The target shown in FIG. 6 has an example in which the inner diameter of the cylinder has the same diameter, but as shown in FIG. 7, the target may be formed to have a smaller diameter toward the bottom side of the inner diameter of the cylinder. .

FIG. 7 is a cross-sectional view showing another example of a target in which the recess is formed so that its diameter becomes smaller toward the bottom side. FIG. 7A shows an example in which the recess is formed in a tapered shape. FIG. 2B shows an example in which the recess is formed in a substantially stepped shape.
The target 34 shown in FIG.
The taper angle of a is set in the range of several degrees to 60 degrees. Although there are two stepped portions in the stepped concave portion 34a shown in FIG. 7B, the number of stepped portions can be appropriately increased.

As described above, by forming the concave portion 34a in a taper shape or a substantially step shape and optimizing the taper angle or the step inclination angle, it is possible to direct the emission direction of the sputtered particles to the nozzle. That is, the nozzle transmittance of sputtered particles can be improved, and the film formation speed can be further increased.

Example 10. In order to increase the surface area of the target while providing the target with many edge portions, the target may be formed as shown in FIG. FIG. 8 is a perspective view showing another example of a target provided with irregularities, FIG. 8A shows an example in which a projection is formed on the flat surface portion of a cylindrical target, and FIG. 8B shows the tip of the cylindrical target. FIG. 4C shows an example in which a notch extending in the radial direction is formed, FIG. 7C shows an example in which a concave groove extending in the circumferential direction is formed at the tip of a cylindrical target, and FIG. The example formed with the part is shown. Note that these figures are drawn with the target being divided into two in the radial direction.

In the target 34 shown in FIG. 8A, a large number of conical or cylindrical projections 34e are provided on the axial end surface 34c (tip surface) and the bottom surface 34d of the recess 34a. These protrusions 34e are formed integrally with the bottomed cylindrical portion of the target 34. In the target 34 shown in FIG. 3B, a plurality of notches 34f extending in the radial direction are formed at the ends in the axial direction at intervals in the circumferential direction. The width of the notch 34f (opening dimension in the circumferential direction of the target 34) is set to be approximately the same as the wall thickness of the cylindrical portion.

The target 34 shown in FIG. 6 (c) has an annular groove 34g which is open at the axial end face 34c at the axial end.
Are formed. Target 34 shown in FIG.
Is a disc portion 34h fixed to the discharge device main body (not shown).
And a plurality of cylinders 34i protruding from the disk portion 34h
It is formed from and. This cylinder 34i is the target 3
4 convex portions. The disc portion 34h is preferably formed of a target material.

As shown in FIGS. 8A to 8D, by forming a large number of edge portions on the inner surface and the upper portion of the target 34, the portion where high density plasma is generated is further increased to generate sputtered particles. Since the amount is increased, the film formation rate can be increased. Besides, target 3
Since the surface area of No. 4 is also large, the amount of sputtered particles can be increased from this point as well.

6 to 8, the example in which the fourth invention is applied to the target 34 used in the discharge device 32 shown in FIG. 3 has been described, but the target according to the fourth invention is It can also be adopted in the discharge device shown in FIGS.

Example 11. When the target is formed in a cylindrical shape with a bottom as shown in FIGS. 6 to 8, the discharge gas may be introduced into the inner peripheral portion of the target as shown in FIG. FIG. 9 is a cross-sectional view showing another example in which the discharge gas is introduced into the inner peripheral portion of the cylindrical target in the target according to the fourth invention. The discharge device shown in the figure is different from the discharge device shown in FIG. 6 in the mounting position of the gas introduction pipe. In the figure, the same or equivalent members as those described in FIGS. 3 and 6 are designated by the same reference numerals, and detailed description thereof will be omitted.

The bottomed cylindrical target 34 shown in FIG.
A through hole 34j parallel to the axial direction is formed in the bottom portion. Therefore, the inside of the recess 34a communicates with the outside of the discharge device through the through hole 34j. In this example,
The through hole 34j is formed in the axial center portion of the target 34. Then, in the portion of the target 34 that penetrates the main body 33 and projects to the outside of the main body 33, the through hole 34j is formed.
The gas introduction pipe 30 is fixed so as to be continuous with the.

With this structure, the gas pressure locally increases in the vicinity of the through hole 34j connected to the gas introducing pipe 30, so that the plasma density increases and many gas ions are generated. That is, the amount of the sputtered particles 11 is increased, and as a result, the film formation rate can be increased. Further, since the gas can be directly supplied to the vicinity of the portion where the discharge is generated, it is not necessary to supply the necessary gas, so that the film forming chamber can be maintained in a high vacuum. In particular, as shown in the drawing, if a gas inlet is opened at the bottom of the cylindrical target 34 having a bottom, a gas flow in the nozzle direction can be generated from the portion where high-density discharge plasma is generated. Therefore, the sputtered particles 11 can be efficiently flown by this gas flow.

Example 12 The sputtering type film forming apparatus according to the fifth invention will be described in detail with reference to FIG. Figure 10
FIG. 6 is a cross-sectional view showing a main part of a sputtering type film forming apparatus according to a fifth invention. In the figure, the same or equivalent members as those described in FIGS. 1 to 5 are designated by the same reference numerals, and detailed description thereof will be omitted.

In FIG. 10, reference numeral 51 is an ionization device according to the fourth invention. The ionization device 51 includes an ionization filament 53 that emits electrons 52 by being energized and heated, a grid 54 that accelerates the electrons 52 and collides with the sputtered particles 11 and a part of the cluster 25. Has been done. The ionizer 51 is arranged closer to the substrate (not shown) than the nozzle 24 of the discharge device 32.

In the film forming apparatus equipped with the ionization device 51, the sputtered particles 11 and the cluster 2 flowing into the film forming chamber
Electron 52 collides with 5 and sputtered particles 11 and cluster 2
5 is ionized. The ionized cluster 25 (cluster ion) is indicated by reference numeral 25a in FIG. The amount of cluster ions 25a is controlled by the amount of electrons 52 and kinetic energy.

The amount of the electrons 52 colliding with the cluster 25 is controlled by the amount of current flowing through the ionizing filament 53 and the voltage applied to the grid 54, and the kinetic energy of the electrons 52 is controlled by the voltage applied to the grid 54. .

Therefore, in this way, the sputtered particles 11
By ionizing the or cluster 25, the chemical potential energy of these particles can be increased, and the sputtered particles 11 and the cluster 25 flowing from the discharge chamber 10 to the film forming chamber are activated.

Although the discharge device shown in FIG. 3 is used in the example shown in FIG. 10, the present invention is not limited to such a limitation, and a partition wall is provided between the discharge chamber and the film forming chamber. Any discharge device can be used as long as it is provided with a nozzle and a nozzle is formed on the partition wall.

Example 13 Further, the ionization device 51 shown in FIG. 10 may be provided with an ion acceleration electrode as shown in FIG.

FIG. 11 is a diagram showing an example in which an ionization electrode is provided in the ionization device in the sputtering device according to the fifth invention. 1 to 10 in FIG.
The same or equivalent members as those described in 1 are assigned the same reference numerals and detailed description thereof will be omitted.

In FIG. 11, reference numeral 55 is an ion acceleration electrode for accelerating the ionized sputtered particles 11 and clusters 25 toward the substrate. The ion acceleration electrode 55 is located closer to the substrate than the grid 54 is.

With this structure, the cluster ions 25a are accelerated toward the substrate by energizing the ion acceleration electrode 55. The speed of the cluster ions 25a is controlled by the voltage applied to the ion acceleration electrode 55.

That is, in addition to the effect obtained by the embodiment shown in FIG. 10, the kinetic energy of the cluster ions 25a can be increased and the speed thereof can be controlled.

Example 14 In each of the above-mentioned embodiments, the discharge when the target is sputtered by the discharge device is the silent discharge, but the same effect can be obtained by using the electrodeless discharge such as the microwave discharge.

Example 15 Although quartz is used as the dielectric material having a low sputtering rate in the embodiments shown in FIGS. 2 to 11, an oxide dielectric material or a nitride dielectric material such as alumina or silicon nitride having a low sputtering rate is used. However, the same effect can be obtained.

Example 16 Furthermore, in each of the above-described embodiments, argon gas was used as the discharge gas (carrier gas), but the type of gas is not limited to this. If a reactive gas such as oxygen or nitrogen is adopted as the discharge gas,
The oxide thin film or the nitride thin film can be formed while promoting the oxidation reaction or the nitriding reaction of the sputtering material in the discharge chamber.

[0085]

As described above, in the sputtering type film forming apparatus according to the first aspect of the invention, between the discharge chamber and the film forming chamber,
Since the partition wall in which the nozzle is formed is provided, it is difficult for the carrier gas to flow from the discharge chamber into the film formation chamber.Therefore, when the pressure in the discharge chamber is increased to the pressure necessary for the discharge, the flow rate of the carrier gas becomes It can be less than the device. Therefore, since the film formation can be performed by lowering the pressure in the film formation chamber, it is possible to prevent gas molecules from being taken into the thin film as much as possible and to form a thin film having dense crystals.

In the sputtering type film forming apparatus according to the second invention, a partition wall is provided between the discharge chamber and the film forming chamber, the nozzle having a small diameter opening is formed, and the partition wall is a part of the wall of the discharge chamber. Since the wall forming the discharge chamber is formed by the target and the dielectric material having a low sputtering rate, the first
In the same manner as in the above invention, in increasing the pressure in the discharge chamber to the pressure required for generating discharge, the flow rate of the carrier gas can be made smaller than that in the conventional device, and sputtered particles are generated only from the target. Therefore, it is possible to form a thin film having dense crystals and prevent metal particles (impurities) generated by sputtering the wall of the film forming chamber from mixing into the thin film.

In the sputtering type film forming apparatus according to the third aspect of the present invention, a partition wall provided with a nozzle is provided between the discharge chamber and the film forming chamber, and at least the outer peripheral wall of the discharge chamber in the discharge device is provided with a sputtering rate. Since it is formed of a low dielectric, and the sputtering electrode is arranged on the outer peripheral portion of this outer peripheral wall, the flow rate of the carrier gas is increased in order to increase the pressure of the discharge chamber to the pressure necessary for generating the discharge as in the first invention. In addition to reducing the number of devices in the conventional device, a discharge is generated between the electrodes through the dielectric or between the electrode and the target through the dielectric, and the discharge is generated over substantially the entire area of the discharge chamber. Therefore, in addition to being able to form a dense thin film of crystals, it is possible to prevent the discharge from locally concentrating and stably generate a uniform discharge in a wide carrier gas pressure range and applied voltage range. The amount of sputtered particles generated is stable and a thin film can be formed uniformly.

A sputtering type film forming apparatus according to a fourth aspect of the present invention is the sputtering type film forming apparatus according to any one of the first to third aspects of the invention, in which a target is provided with irregularities. Therefore, since the target has a large number of edge portions, high-density plasma is generated around the edge portion, and gas ions that sputter the target increase. In addition, the surface area of the target is increased, so that the amount of sputtered particles is increased.

Therefore, since the amount of sputtered particles can be increased, the film forming speed can be increased.

A sputtering type film forming apparatus according to a fifth aspect of the present invention is the sputtering type film forming apparatus according to the first aspect of the present invention, which is provided with a filament for emitting thermoelectrons and an electron accelerating grid on the substrate side from the nozzle. Since the ionization device for ionizing the particles is provided, the flow rate of the carrier gas can be reduced as compared with the conventional device in increasing the pressure of the discharge chamber to the pressure necessary for generating the discharge as in the first invention, Sputtered particles flowing out into the film forming chamber are activated. Therefore, in addition to being able to form a thin film with dense crystals, it is possible to control the crystallinity of the thin film to be formed and to promote a chemical reaction in forming a compound thin film.

[Brief description of drawings]

FIG. 1 is a sectional view showing a schematic configuration of a sputtering type film forming apparatus according to a first invention.

FIG. 2 is a sectional view showing a schematic configuration of a sputtering type film forming apparatus according to a second invention.

FIG. 3 is a cross-sectional view of a discharge device used in a sputtering type film forming apparatus according to a third aspect of the present invention, in which the discharge device shown in FIG. 3 has all the walls of the discharge chamber formed of a dielectric.

FIG. 4 is a cross-sectional view of a discharge device used in a sputtering type film forming apparatus according to a third invention, and the discharge device shown in the figure is one in which partition walls are formed by targets.

FIG. 5 is a cross-sectional view of a discharge device used in a sputtering type film forming apparatus according to a third aspect of the present invention, in which the discharge device shown in the same figure forms the entire wall of the discharge chamber with a dielectric and the electrode is provided outside the discharge chamber. It is arranged.

FIG. 6 is a cross-sectional view of a discharge device used in a sputtering type film forming apparatus according to a fourth invention.

FIG. 7 is a cross-sectional view showing another example of a target in which a recess is formed so that its diameter becomes smaller toward the bottom side, and FIG. 7A shows an example in which the recess is formed in a tapered shape. b) shows an example in which the recess is formed in a substantially stepped shape.

FIG. 8 is a perspective view showing another example of a target provided with concavities and convexities, FIG. 8A shows an example in which protrusions are formed on the flat surface portion of a cylindrical target, and FIG. An example in which a notch extending in the radial direction is formed at the tip is shown, FIG. 7C shows an example in which a concave groove extending in the circumferential direction is formed at the tip of a cylindrical target, and FIG. An example formed by a cylindrical portion is shown.

FIG. 9 is a cross-sectional view showing another example in which the discharge gas is introduced into the inner peripheral portion of the cylindrical target in the target according to the fourth invention.

FIG. 10 is a sectional view showing a main part of a sputtering type film forming apparatus according to a fourth invention.

FIG. 11 is a diagram showing an example in which an ionization electrode is provided in an ionization device in a sputtering device according to a fourth invention.

FIG. 12 is a cross-sectional view showing a schematic configuration of a conventional sputtering type film forming apparatus.

[Explanation of symbols]

 1 Chamber 2 Deposition Chamber 3 Substrate 6 Target 10 Discharge Chamber 11 Sputtered Particles 21 Discharge Device 22 Electrode 23 Partition Wall 24 Nozzle 26 Discharge Device 27 Cover Member 29 Target 32 Discharge Device 33 Main Body 33a Partition Wall 34 Target 34a Recess 34e Protrusion 34f Cut 34g Ring Groove 34i Column 35 Electrode 36 Discharger 37 Target 38 Discharger 39 Target 40 Electrode 41 Electrode 51 Ionizer 52 Electron 53 Ionization filament 54 Grid

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[Procedure amendment]

[Submission date] September 28, 1993

[Procedure Amendment 1]

[Document name to be amended] Statement

[Correction target item name] Full text

[Correction method] Change

[Correction content]

[Document name] Statement

[Title of Invention] Sputtering type film forming apparatus

[Claims]

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sputtering type film forming apparatus for forming a thin film on a substrate by causing sputtered particles generated by sputtering a target to flow toward the substrate by an introduced gas .

[0002]

2. Description of the Related Art As a conventional sputtering type film forming apparatus of this kind, for example, Technical Report ED88-2 of the Institute of Electrical Communication.
4 (1988), page 15. This conventional film forming apparatus will be described with reference to FIG.

FIG. 12 is a sectional view showing a schematic structure of a conventional sputtering type film forming apparatus. In the figure, reference numeral 1 denotes a chamber for film formation, and a film formation chamber 2 in the chamber 1 is equipped with a film formation substrate 3. Reference numeral 4 denotes an exhaust device for reducing the pressure inside the film forming chamber 2 and a discharge chamber described later to maintain a predetermined pressure. The exhaust device 4 is composed of a rotary pump and an oil diffusion pump.

Reference numeral 5 is a discharge device for generating sputtered particles. The discharge device 5 closes a cylindrical target 6 and an opening at one end of the target 6.
The gas introducing member 7 and the water cooling type cooling member 8 mounted on the outer peripheral portion of the target 6 are formed, and the target 6 and the gas introducing member 7 are connected to a power source (not shown). 9 is a target 6 in the chamber 1 and gas introduction
It is an insulating plate that is electrically isolated from the member 7 .

The target 6 is made of copper, iron or titanium and is positioned so that its hollow portion faces the introduction opening 1a of the chamber 1. The substrate 3 is arranged at a position facing the hollow portion of the target 6.

The gas introducing member 7 is formed in a substantially disc shape, and has a gas introducing port at a portion corresponding to the hollow portion of the target 6.
7a is open. This gas inlet 7a is for introducing gas
It is connected to an argon gas supply source (not shown) via a tube portion 7b formed integrally with the member 7 and a mass flow controller (not shown).

That is, in the discharge device 5 thus formed, the discharge chamber 10 communicated with the film formation chamber 2 through the introduction opening 1a of the chamber 1 in the hollow portion of the target 6.
Will be formed.

Next, a procedure for forming a thin film on the substrate 3 by the conventional sputtering type film forming apparatus configured as described above will be described. First, the substrate 3 is mounted in the film forming chamber 2, and the film forming chamber 2 and the discharge chamber 10 are pre-evacuated by the exhaust device 4 so that the pressure becomes 2 × 10 ⁻⁵ Torr or less. Then, an argon gas as an introduction gas is introduced into the discharge chamber 10 from the gas introduction port 7a through the mass flow controller. By doing so, the argon gas flows from the discharge chamber 10 into the chamber 1 (film forming chamber 2) through the introduction opening 1a.

Then, the exhaust device 4 discharges the argon gas to make the flow rate of the argon gas flowing from the discharge chamber 10 into the film forming chamber 2 constant, and in this state, the gas introducing member 7 and the chamber 1 which are at the ground potential. A negative voltage is applied to the target 6. When the argon gas flow is generated in this way, the pressure in the film forming chamber 2 and the discharge chamber 10 is increased to about 1 Torr.

When the voltage is applied to the target 6 in this way, glow discharge occurs in the discharge chamber 10. If the argon gas flow rate is 200cc / min and the pressure is 1 Torr,
Approximately 3 if a copper target 6 is used
Discharge is stable at a voltage of 50 V, about 330 V for iron, and about 250 V for titanium.

When a discharge is generated in the discharge chamber 10 as described above, the inner peripheral surface of the target 6 is sputtered,
Sputtered particles 11 are knocked out from the target 6.
Then, the sputtered particles 11 are made to flow into the film forming chamber 2 together with the argon gas flowing from the discharge chamber 10 into the film forming chamber 2,
Deposit on the substrate 3. Thus, the sputtered particles 11 are deposited on the substrate 3 to form a thin film.

[0012]

However, the conventional film forming apparatus having the above-mentioned structure has a problem that the quality of the formed thin film tends to be low. This is because it is necessary to increase the pressure in the discharge chamber 10 to a pressure at which discharge easily occurs, and the film formation chamber 2 communicating with the discharge chamber 10 has the same pressure (1
Torr).

That is, as described above, when film formation is performed in a state where the pressure is relatively high (there are many argon molecules in the film forming chamber 2), gas molecules (1 million atomic layers) per second on the substrate surface ( Argon molecules) collide with each other, and a part of them is adsorbed and stays on the surface of the thin film. Since the thin film is formed while taking in these gas molecules, it is difficult for the crystal to become dense and the film quality becomes poor.

Further, since the conventional film-forming apparatus is set to one electrode chamber 1 and the gas introducing member 7, caused sputtering even chamber 1 and the gas introducing member 7, the metal constituting the chamber 1 and the gas introducing member 7 material However, there is a problem that is mixed in the thin film as an impurity.

Further, in the discharge device 5 used in the conventional film forming apparatus, the discharge pressure,
Since discharge changes to arc discharge due to fluctuations in applied voltage, there is a restriction on the range of discharge pressure and discharge power for stably generating uniform discharge. That is, the discharge is gas
It becomes easy to concentrate on the insertion member 7 side. Therefore, the amount of the sputtered particles 11 knocked out from the target 6 becomes difficult to be constant.

The present invention has been made to solve such a problem, and an object thereof is to obtain a sputtering type film forming apparatus capable of stably forming a high quality thin film.

[0017]

A sputtering type film forming apparatus according to a first aspect of the present invention is provided with a partition having a nozzle formed between a discharge chamber and a film forming chamber.

In the sputtering type film forming apparatus according to the second aspect of the invention, a partition wall is provided between the discharge chamber and the film forming chamber, the nozzle having a small diameter opening is formed, and the partition wall is a part of the wall of the discharge chamber. The wall forming the discharge chamber is formed by a target and a dielectric material having a low sputtering rate.

In the sputtering type film forming apparatus according to the third aspect of the present invention, a partition wall provided with nozzles is provided between the discharge chamber and the film forming chamber, and at least the outer peripheral wall of the discharge chamber in the discharge device has a sputtering rate. It is formed of a low dielectric material, and the sputtering electrode is arranged on the outer peripheral portion of this outer peripheral wall.

A sputtering type film forming apparatus according to a fourth aspect of the present invention is the sputtering type film forming apparatus according to any one of the sputtering type film forming apparatuses according to the first to third aspects of the present invention, wherein the target is provided with irregularities. It is a thing.

A sputtering type film forming apparatus according to a fifth aspect of the present invention is a sputtering type film forming apparatus according to any one of the first to fourth aspects of the invention.
Sputtering type film deposition from any one of the film deposition systems
In the apparatus, a filament that emits thermoelectrons and an electron acceleration grid are provided on the substrate side of the nozzle, and an ionization device that ionizes sputtered particles is provided.

[0022]

According to the first aspect of the present invention, the introduced gas is less likely to flow into the film forming chamber from the discharge chamber. Therefore, when the pressure in the discharge chamber is increased to the pressure required for generating the discharge, the flow rate of the introduced gas is conventionally reduced. Can be less than the device.

According to the second aspect of the invention, as in the first aspect of the invention, in order to increase the pressure of the discharge chamber to the pressure required for generating the discharge, the flow rate of the introduced gas can be made smaller than that of the conventional device, and only the target can be used. Sputtered particles are generated from.

According to the third aspect of the invention, as in the first aspect of the invention, in increasing the pressure of the discharge chamber to the pressure required to generate the discharge, the flow rate of the introduced gas can be reduced as compared with the conventional device, and the dielectric material can be used. A discharge is generated between the electrodes via the electrodes or between the electrodes via the dielectric and the target, and is generated over almost the entire area of the discharge chamber.

According to the fourth aspect of the invention, since the target has a large number of edge portions, high-density plasma is generated around the edge portion, and gas ions that sputter the target increase. In addition, the surface area of the target is increased, so that the amount of sputtered particles is increased.

According to the fifth invention, the first to fourth transmissions
In the bright sputtering type film forming apparatus, the sputtered particles flowing out from the discharge chamber to the film forming chamber are activated.

[0027]

EXAMPLES Example 1. Hereinafter, the first embodiment will be described in detail with reference to FIG. FIG. 1 is a sectional view showing a schematic configuration of a sputtering type film forming apparatus according to the first invention. In the figure, the same or equivalent members as those described in FIG. 12 are designated by the same reference numerals, and detailed description thereof will be omitted.

[0028] In FIG. 1, the discharge device for the code 21 to generate the sputtering particles, the discharge device 21, moth
The structure is the same as that shown in FIG. 12 except that the cylindrical electrode 22 is provided on the introducing member 7 . The columnar electrode 22 is arranged in the hollow portion of the target 6 formed in a cylindrical shape, and is positioned so that the center axis is the same as the center axis of the target 6.

In the chamber 1 in which the discharge device 21 is mounted, a partition wall 23 is formed at a portion between the discharge chamber 10 and the film forming chamber 2. The partition wall 23 has a nozzle 24 having a small-diameter opening formed in a portion corresponding to the center of the discharge chamber 10 (center of the target 6).

Next, the procedure for forming a thin film on the substrate 3 by the film forming apparatus thus configured will be described. First, the substrate 3 is mounted in the chamber 1, and the inside of the chamber 1 (the film forming chamber 2) and the inside of the discharge chamber 10 are decompressed by the exhaust device 4 so as to have a high vacuum. After that, the discharge device 2
Argon gas, which is an introduction gas for generating a discharge at 1, is introduced into the discharge chamber 10 through the gas introduction port 7a of the discharge device 21.

At this time, the discharge chamber 10 and the film forming chamber 2 are only communicated with each other through the nozzle 24, and it is difficult for the argon gas to flow into the film forming chamber 2 from the discharge chamber 10. Is kept higher than the pressure in the film forming chamber 2.
It For example, the inner diameter of the nozzle 24 is 2 mm and the passage length is 2 m.
When the flow rate of the argon gas is 25 cc / min and the exhaust flow rate of the exhaust device 4 is 3000 l / s, the pressure of the discharge chamber 10 is 1 Torr, whereas the pressure of the film forming chamber 2 is 10 ^-4.
Become Torr. By doing so, the number of gas molecules colliding with the surface of the substrate 3 per second can be reduced to 100 atomic layers.

After introducing the argon gas into the discharge chamber 10 as described above, the discharge is caused while continuing the exhaust by the exhaust device 4. This discharge is connected to earth potential either of the target 6 and the cylindrical electrode 22, generated by applying an AC voltage having a frequency 2 MH _Z to the other. The distance between the inner surface of the target 6 and the outer peripheral surface of the cylindrical electrode 22 was 2 cm.

The sputtered particles 11 struck from the target 6 by this discharge are kinetic energy at the time of being sputtered and the pressure between the discharge chamber 10 and the film forming chamber 2.
Nozzle 2 with kinetic energy given by force difference
It is discharged to the inside of the film forming chamber 2 through 4. At this time, the sputtered particles 11 are emitted toward the substrate 3 with directivity. The sputtered particles 11 were sputtered.
Is released to the film forming chamber 2 by the kinetic energy of
And the kinetic energy given by the pressure difference is
But it is a by-product.

When the sputtered particles 11 pass through the nozzle 24 and flow into the film forming chamber 2, the sputtered particles 11
Part of it is condensed by the adiabatic expansion of argon gas,
Massive clusters called clusters are formed. This cluster is indicated by reference numeral 25 in FIG.

As described above, the sputtered particles 11 and the clusters 25 discharged into the film forming chamber 2 through the nozzle 24 are deposited on the substrate 3 to form a thin film.

Therefore, according to the film forming apparatus of the first aspect of the invention configured as described above, since the partition wall 23 and the nozzle 24 are provided between the discharge chamber 10 and the film forming chamber 2, the argon gas is generated in the discharge chamber. Since it becomes difficult to flow from 10 into the film forming chamber 2,
When increasing the pressure of the discharge chamber 10 to the pressure necessary for generating the discharge, the flow rate of the argon gas can be reduced as compared with the conventional device. Therefore, the number of gas molecules that collide with the surface of the substrate 3 can be reduced as much as possible.

Example 2. In addition, in the above-described embodiment, an example in which electric discharge is generated between the cylindrical target 6 and the cylindrical electrode 22 has been described. However, the electrode is formed in a cylindrical shape and the target is formed in a cylindrical shape to form the cylindrical shape. Even if it is arranged in the hollow part of the electrode and discharge is generated between the cylindrical target and the cylindrical electrode, the same effect can be obtained.

Example 3. In addition, the electrodes used in the film forming apparatus of Examples 1 and 2 may be formed of a target material, and discharge may be generated between the cylindrical target and the cylindrical target. Even in this case, the same effect as that of each of the above-described embodiments can be obtained. In addition, by not using an electrode composed of a material different from that of the target, it is possible to prevent impurities from being generated due to sputtering of the electrode.

Example 4. Next, the sputtering type film forming apparatus according to the second invention will be described in detail with reference to FIG. FIG. 2 is a sectional view showing a schematic configuration of a sputtering type film forming apparatus according to the second invention. In the figure, the same or equivalent members as those described in FIG. 1 are designated by the same reference numerals, and detailed description thereof will be omitted.

In FIG. 2, reference numeral 26 denotes a discharge device. The discharge device 26 has a cylindrical target 6 and a discharge chamber 10 formed in a hollow portion of the target 6 by being fixed to openings at both ends of the target 6. Cover members 27 and 28, and electrodes 29 and the like facing the discharge chamber 10. The entire discharge device 26 is inserted into the chamber 1 and is supported and fixed to the chamber 1 via a bracket (not shown). This bracket is for the target 6
And the chamber 1 are not electrically connected to each other.

The lid members 27 and 28 are made of quartz, which is a dielectric substance having a low sputtering rate, and the lid member 27 located on the substrate 3 side has a nozzle having a small diameter opening at a position corresponding to the axis of the target 6. 24 are formed. On the other hand, on the lid member 28 located on the side opposite to the substrate 3, the electrode 29 is fixed by penetrating, and the gas introducing pipe 30 for introducing the argon gas into the discharge chamber 10 is fixed by penetrating. The electrode 29 is made of a target material used to form the target 6. The discharge device 26 is positioned and fixed in the chamber 1 with the nozzle 24 of the lid member 27 facing the substrate 3.

According to the film forming apparatus configured as described above,
Since the partition wall (cover member 27) having the nozzle 24 is provided between the discharge chamber 10 and the film formation chamber 2, the flow rate of the argon gas is increased in order to increase the pressure in the discharge chamber 10 to the pressure necessary for generating the discharge. It can be made less than conventional devices. In addition to this, the wall forming the discharge chamber 10 is made up of the target 6 and the lid member 2 made of quartz which is a dielectric material having a low sputtering rate.
Since it is formed of 7 and 28, only the target 6 and the quartz lid members 27 and 28 are directly exposed to the discharge space in the discharge chamber 10. Since quartz is a low-sputtering material, sputtered particles are less likely to be generated from the lid members 27 and 28.

Therefore, the target 6 is placed in the discharge chamber 10.
Since sputtered particles are generated only from the above, it is possible to prevent impurities from mixing into the thin film of the substrate 3. Further, by disposing the discharge device 26 in the chamber 1 as shown in this embodiment, it is possible to reliably prevent the discharge of the discharge to the chamber 1 at the ground potential and the sputtering of the chamber 1. From this point of view, it is possible to prevent impurities from being mixed into the thin film.

Example 5. The sputtering type film forming apparatus according to the third invention will be described in detail with reference to FIGS. FIG. 3 is a sectional view of a discharge device used in a sputtering type film forming apparatus according to the third invention. In the discharge device shown in FIG. 3, all the walls of the discharge chamber are made of a dielectric material. FIG. 4 is a cross-sectional view of a discharge device used in the sputtering type film forming apparatus according to the third invention, and the discharge device shown in the figure is one in which partition walls are formed by targets. Figure 5
Is a cross-sectional view of a discharge device used in a sputtering type film forming apparatus according to the third invention. In the discharge device shown in the figure, all the walls of the discharge chamber are made of a dielectric and electrodes are arranged outside the discharge chamber. Is. In these figures, the same or equivalent members as those described in FIGS. 1 and 2 are designated by the same reference numerals, and detailed description thereof will be omitted.

In FIG. 3, reference numeral 32 is a discharge device, which is a substantially bottomed cylindrical main body 33 made of quartz, which is a dielectric substance having a low sputtering rate.
The main body 33 is composed of a columnar target 34 arranged at the axial center of the main body 33 and fixed through the main body 33, and an electrode 35 and the like installed on the outer peripheral portion of the main body 33. As the chamber in which the discharge device 32 is mounted, the same chamber as the chamber 1 shown in FIG. 2 is used.

The main body 33 is formed by providing a partition wall 33a that closes the bottomed cylindrical opening portion, and the partition wall 33a is formed with a nozzle 24 having a small diameter opening. The formation position of the nozzle 24 is a position facing the axial end surface of the cylindrical target 34. That is, according to this discharge device, the partition wall 33a is formed.
Partition the discharge chamber 10 in the main body 33 from the film forming chamber in the chamber (not shown). With such a structure, as in the embodiment shown in FIGS. 1 and 2,
In order to increase the pressure in the discharge chamber 10 to the pressure required to generate the discharge, the flow rate of the argon gas can be made smaller than that in the conventional device.

The discharge device 32 has a structure in which one of the columnar target 34 and the electrode 35 is set to the ground potential, and an AC voltage is applied to the other.

In the discharge device 32 thus formed,
Electric discharge is generated between the electrode 35 and the target 34 via the main body 33. At this time, silent discharge is generated in the discharge chamber 10, and when the charge generated by the discharge reaches the inner wall surface of the quartz main body 33 interposed between the columnar target 34 and the electrode 35, the surface of the main body 33 is charged. Are accumulated and an opposite electric field is formed to stop the discharge.

Therefore, a fine pulsed discharge is continuously generated in substantially the entire area of the discharge chamber 10, and local concentration of the discharge is prevented. That is, the target 34
The discharge for sputtering is uniformly and stably generated in a wide range over substantially the entire surface of the.

Example 6. In forming the discharge chamber of the discharge device, in addition to forming the entire wall of the discharge chamber with a quartz material as shown in FIG. 3, a partition wall portion is formed with a target as shown in FIG. You can also

In a discharge device indicated by reference numeral 36 in FIG. 4, a quartz main body 33 is formed in a bottomed cylindrical shape.
The target 37 is fixed to the opening of No. 3. The target 37 has a structure that closes the opening of the main body 33, and the nozzle 24 having a small diameter opening is formed in a portion corresponding to the axial center of the main body 33. That is, the target 37
Form a partition that separates the discharge chamber 10 from the film forming chamber in the chamber (not shown).

Even in the discharge device 36 thus formed, discharge is generated between the electrode 35 and the target 37 via the main body 33, so that the same effect as that of the embodiment shown in FIG. 3 can be obtained.

Example 7. The discharge device shown in FIGS. 3 and 4 has a structure in which the target is energized to generate a discharge, but it is also possible not to energize the target as shown in FIG.

In the discharge device indicated by reference numeral 38 in FIG. 5, a target 39 is fixed in a substantially bottomed cylindrical main body 33, and electrodes 40 and 41 are provided on the outer peripheral portion of the main body 33 at intervals in the axial direction of the main body 33. It is installed in advance. The target 39 is formed in a cylindrical shape to be fitted into the inner peripheral portion of the main body 33,
It is fixed to the end of the main body 33 on the side of the partition wall 33a.

Then, the discharge device 38 includes the electrode 4
One of 0 and 41 is grounded and a high frequency voltage is applied to the other. Even with such a configuration, silent discharge is generated in the discharge chamber 10
Since the target 39 placed inside can be sputtered, the same effect as the embodiment shown in FIG. 3 can be obtained.

Example 8. The sputtering type film forming apparatus according to the fourth invention will be described in detail with reference to FIG. FIG. 6 is the fourth
3 is a cross-sectional view of a discharge device used in the sputtering type film forming apparatus according to the invention of FIG. In the discharge device shown in the figure, members other than the target are formed in the same manner as the discharge device shown in FIG. In the figure, the same or similar members as those described in FIG. 3 are designated by the same reference numerals, and detailed description thereof will be omitted.

The target 34 shown in FIG. 6 is formed in a generally cylindrical shape having a bottom, and the cylindrical portion in which the recess 34a is formed faces the interior of the discharge chamber 10 and is fixed to the main body 33 by penetration. . The recess 34a is formed so that its inner diameter is constant. In the cylindrical target 34 thus formed, there are many edge portions 34b where the discharge is concentrated. Therefore, high-density plasma is generated around the edge portion 34b, and the gas ions that sputter the target 34 increase. As a result, the sputtered particles 11 sputtered from the target 34 increase.

Moreover, since the inner surface of the recess 34a is sputtered in addition to the outer peripheral surface and the tip surface of the target 34, the sputtered area is increased. Therefore, the amount of the sputtered particles 11 to be discharged is also increased from this point. You can

The discharge device 32 shown in FIG.
A quartz tube with an inner diameter of 27 mm is used as 3, and the target 34
Is formed by using molybdenum having an outer diameter of 22 mm and an inner diameter of 18 mm, and using argon as an introduction gas , a discharge power of about 300 W is applied through a stainless steel electrode having a height of 50 mm wound on a quartz tube, and a test is performed. About 100
When the film formation rate was measured with a crystal oscillator monitor at a distance of mm, a film formation rate of about 300 Å / min could be obtained.

Example 9. The target shown in FIG. 6 has an example in which the inner diameter of the cylinder has the same diameter, but as shown in FIG. 7, the target may be formed to have a smaller diameter toward the bottom side of the inner diameter of the cylinder. .

FIG. 7 is a cross-sectional view showing another example of a target in which the recess is formed so that its diameter becomes smaller toward the bottom side. FIG. 7A shows an example in which the recess is formed in a tapered shape. FIG. 2B shows an example in which the recess is formed in a substantially stepped shape.
The target 34 shown in FIG.
The taper angle of a is set in the range of several degrees to 60 degrees. Although there are two stepped portions in the stepped concave portion 34a shown in FIG. 7B, the number of stepped portions can be appropriately increased.

As described above, by forming the concave portion 34a in a taper shape or a substantially step shape and optimizing the taper angle or the step inclination angle, it is possible to direct the emission direction of the sputtered particles to the nozzle. That is, the nozzle transmittance of sputtered particles can be improved, and the film formation speed can be further increased.

Example 10. In order to increase the surface area of the target while providing the target with many edge portions, the target may be formed as shown in FIG. FIG. 8 is a perspective view showing another example of a target provided with irregularities, FIG. 8A shows an example in which a projection is formed on the flat surface portion of a cylindrical target, and FIG. 8B shows the tip of the cylindrical target. FIG. 4C shows an example in which a notch extending in the radial direction is formed, FIG. 7C shows an example in which a concave groove extending in the circumferential direction is formed at the tip of a cylindrical target, and FIG. The example formed with the part is shown. Note that these figures are drawn with the target being divided into two in the radial direction.

In the target 34 shown in FIG. 8A, a large number of conical or cylindrical projections 34e are provided on the axial end surface 34c (tip surface) and the bottom surface 34d of the recess 34a. These protrusions 34e are formed integrally with the bottomed cylindrical portion of the target 34. In the target 34 shown in FIG. 3B, a plurality of notches 34f extending in the radial direction are formed at the ends in the axial direction at intervals in the circumferential direction. The width of the notch 34f (opening dimension in the circumferential direction of the target 34) is set to be approximately the same as the wall thickness of the cylindrical portion.

The target 34 shown in FIG. 6 (c) has an annular groove 34g which is open at the axial end face 34c at the axial end.
Are formed. Target 34 shown in FIG.
Is a disc portion 34h fixed to the discharge device main body (not shown).
And a plurality of cylinders 34i protruding from the disk portion 34h
It is formed from and. This cylinder 34i is the target 3
4 convex portions. The disc portion 34h is preferably formed of a target material.

As shown in FIGS. 8A to 8D, by forming a large number of edge portions on the inner surface and the upper portion of the target 34, the portion where high density plasma is generated is further increased to generate sputtered particles. Since the amount is increased, the film formation rate can be increased. Besides, target 3
Since the surface area of No. 4 is also large, the amount of sputtered particles can be increased from this point as well.

6 to 8, the example in which the fourth invention is applied to the target 34 used in the discharge device 32 shown in FIG. 3 has been described, but the target according to the fourth invention is It can also be adopted in the discharge device shown in FIGS.

Example 11. When the target is formed in a cylindrical shape with a bottom as shown in FIGS. 6 to 8, the introduced gas can be introduced into the inner peripheral portion of the target as shown in FIG. FIG. 9 is a cross-sectional view showing another example of introducing the introduced gas into the inner peripheral portion of the cylindrical target in the target according to the fourth invention. The discharge device shown in the figure is different from the discharge device shown in FIG. 6 in the mounting position of the gas introduction pipe. In the figure, the same or equivalent members as those described in FIGS. 3 and 6 are designated by the same reference numerals, and detailed description thereof will be omitted.

The bottomed cylindrical target 34 shown in FIG.
A through hole 34j parallel to the axial direction is formed in the bottom portion. Therefore, the inside of the recess 34a communicates with the outside of the discharge device through the through hole 34j. In this example,
The through hole 34j is formed in the axial center portion of the target 34. Then, in the portion of the target 34 that penetrates the main body 33 and projects to the outside of the main body 33, the through hole 34j is formed.
The gas introduction pipe 30 is fixed so as to be continuous with the.

With this structure, the gas pressure locally increases in the vicinity of the through hole 34j connected to the gas introducing pipe 30, so that the plasma density increases and many gas ions are generated. That is, the amount of the sputtered particles 11 is increased, and as a result, the film formation rate can be increased. Further, since the gas can be directly supplied to the vicinity of the portion where the discharge is generated, it is not necessary to supply the necessary gas, so that the film forming chamber can be maintained in a high vacuum. In particular, as shown in the drawing, if a gas inlet is opened at the bottom of the cylindrical target 34 having a bottom, a gas flow in the nozzle direction can be generated from the portion where high-density discharge plasma is generated. Therefore, the sputtered particles 11 can be efficiently flown by this gas flow.

Example 12 The sputtering type film forming apparatus according to the fifth invention will be described in detail with reference to FIG. Figure 10
FIG. 6 is a cross-sectional view showing a main part of a sputtering type film forming apparatus according to a fifth invention. In the figure, the same or equivalent members as those described in FIGS. 1 to 5 are designated by the same reference numerals, and detailed description thereof will be omitted.

In FIG. 10, reference numeral 51 is an ionization device according to the fifth invention . The ionization device 51 includes an ionization filament 53 that emits electrons 52 by being energized and heated, a grid 54 that accelerates the electrons 52 and collides with the sputtered particles 11 and a part of the cluster 25. Has been done. The ionizer 51 is arranged closer to the substrate (not shown) than the nozzle 24 of the discharge device 32.

In the film forming apparatus equipped with the ionization device 51, the sputtered particles 11 and the cluster 2 flowing into the film forming chamber
Electron 52 collides with 5 and sputtered particles 11 and cluster 2
5 is ionized. The ionized cluster 25 (cluster ion) is indicated by reference numeral 25a in FIG. The amount of cluster ions 25a is controlled by the amount of electrons 52 and kinetic energy.

The amount of the electrons 52 colliding with the cluster 25 is controlled by the amount of current flowing through the ionizing filament 53 and the voltage applied to the grid 54, and the kinetic energy of the electrons 52 is controlled by the voltage applied to the grid 54. .

Therefore, in this way, the sputtered particles 11
By ionizing the or cluster 25, the chemical potential energy of these particles can be increased, and the sputtered particles 11 and the cluster 25 flowing from the discharge chamber 10 to the film forming chamber are activated.

Although the discharge device shown in FIG. 3 is used in the example shown in FIG. 10, the present invention is not limited to such a limitation, and a partition wall is provided between the discharge chamber and the film forming chamber. Any discharge device can be used as long as it is provided with a nozzle and a nozzle is formed on the partition wall.

Example 13 Further, the ionization device 51 shown in FIG. 10 may be provided with an ion acceleration electrode as shown in FIG.

FIG. 11 is a diagram showing an example in which an ionization electrode is provided in the ionization device in the sputtering device according to the fifth invention. 1 to 10 in FIG.
The same or equivalent members as those described in 1 are assigned the same reference numerals and detailed description thereof will be omitted.

In FIG. 11, reference numeral 55 is an ion acceleration electrode for accelerating the ionized sputtered particles 11 and clusters 25 toward the substrate. The ion acceleration electrode 55 is located closer to the substrate than the grid 54 is.

With this structure, the cluster ions 25a are accelerated toward the substrate by energizing the ion acceleration electrode 55. The speed of the cluster ions 25a is controlled by the voltage applied to the ion acceleration electrode 55.

That is, in addition to the effect obtained by the embodiment shown in FIG. 10, the kinetic energy of the cluster ions 25a can be increased and the speed thereof can be controlled. In addition, an ion acceleration electrode 55 should be provided.
And give kinetic energy to the sputtered particles 11.
Control the crystallinity of the formed thin film.
be able to.

Example 14 In each of the above-mentioned embodiments, the discharge when the target is sputtered by the discharge device is the silent discharge, but the same effect can be obtained by using the electrodeless discharge such as the microwave discharge.

Example 15 Although quartz is used as the dielectric material having a low sputtering rate in the embodiments shown in FIGS. 2 to 11, an oxide dielectric material or a nitride dielectric material such as alumina or silicon nitride having a low sputtering rate is used. However, the same effect can be obtained.

Example 16 Furthermore, although argon gas was used as the introduction gas in each of the above-described embodiments, the type of gas is not limited to this. When a reactive gas such as oxygen or nitrogen is used as the introduction gas , the oxide thin film or the nitride thin film can be formed while promoting the oxidation reaction or the nitriding reaction of the sputtering material in the discharge chamber.

[0085]

As described above, in the sputtering type film forming apparatus according to the first aspect of the invention, between the discharge chamber and the film forming chamber,
Since provided with a partition wall in which the nozzles are formed, when because introducing gas hardly flows into the deposition chamber from the discharge chamber to increase the pressure of the discharge chamber to the pressure required to discharge occurs, guide
The flow rate of incoming gas can be reduced as compared with the conventional device. Therefore, since the film formation can be performed by lowering the pressure in the film formation chamber, it is possible to prevent gas molecules from being taken into the thin film as much as possible and to form a thin film having dense crystals.

In the sputtering type film forming apparatus according to the second invention, a partition wall is provided between the discharge chamber and the film forming chamber, the nozzle having a small diameter opening is formed, and the partition wall is a part of the wall of the discharge chamber. Since the wall forming the discharge chamber is formed by the target and the dielectric material having a low sputtering rate, the first
In the same manner as in the invention of (1), the flow rate of the introduced gas can be reduced when increasing the pressure in the discharge chamber to the pressure required for generating discharge, and sputtered particles are generated only from the target. Therefore, it is possible to form a thin film having dense crystals and prevent metal particles (impurities) generated by sputtering the wall of the film forming chamber from mixing into the thin film.

In the sputtering type film forming apparatus according to the third aspect of the present invention, a partition wall provided with a nozzle is provided between the discharge chamber and the film forming chamber, and at least the outer peripheral wall of the discharge chamber in the discharge device is provided with a sputtering rate. Since it is made of a low dielectric material and the sputtering electrode is arranged on the outer peripheral portion of this outer peripheral wall, the flow rate of the introduced gas for increasing the pressure of the discharge chamber to the pressure necessary for generating the discharge is the same as in the first invention. In addition to reducing the number of devices in the conventional device, a discharge is generated between the electrodes through the dielectric or between the electrode and the target through the dielectric, and the discharge is generated over substantially the entire area of the discharge chamber. Therefore, in addition to being able to form a dense thin film of crystals, it is possible to prevent the discharge from locally concentrating and to stably generate a uniform discharge in a wide introduced gas pressure range and applied voltage range. The amount of sputtered particles generated is stable and a thin film can be formed uniformly.

A sputtering type film forming apparatus according to a fourth aspect of the present invention is the sputtering type film forming apparatus according to any one of the first to third aspects of the invention, in which a target is provided with irregularities. Therefore, since the target has a large number of edge portions, high-density plasma is generated around the edge portion, and gas ions that sputter the target increase. In addition, the surface area of the target is increased, so that the amount of sputtered particles is increased.

Therefore, since the amount of sputtered particles can be increased, the film forming speed can be increased.

A sputtering type film forming apparatus according to a fifth aspect of the present invention is the sputtering type film forming apparatus according to the first aspect of the present invention, which is provided with a filament for emitting thermoelectrons and an electron accelerating grid on the substrate side from the nozzle. Since the ionization device for ionizing the particles is provided, the flow rate of the introduced gas can be reduced as compared with the conventional device when increasing the pressure of the discharge chamber to the pressure necessary for generating the discharge as in the first invention, Sputtered particles flowing out into the film forming chamber are activated. Therefore, in addition to being able to form a thin film with dense crystals, it is possible to control the crystallinity of the thin film to be formed and to promote a chemical reaction in forming a compound thin film.

[Brief description of drawings]

FIG. 1 is a sectional view showing a schematic configuration of a sputtering type film forming apparatus according to a first invention.

FIG. 2 is a sectional view showing a schematic configuration of a sputtering type film forming apparatus according to a second invention.

FIG. 3 is a cross-sectional view of a discharge device used in a sputtering type film forming apparatus according to a third aspect of the present invention, in which the discharge device shown in FIG. 3 has all the walls of the discharge chamber formed of a dielectric.

FIG. 4 is a cross-sectional view of a discharge device used in a sputtering type film forming apparatus according to a third invention, and the discharge device shown in the figure is one in which partition walls are formed by targets.

FIG. 5 is a cross-sectional view of a discharge device used in a sputtering type film forming apparatus according to a third aspect of the present invention, in which the discharge device shown in the same figure forms the entire wall of the discharge chamber with a dielectric and the electrode is provided outside the discharge chamber. It is arranged.

FIG. 6 is a cross-sectional view of a discharge device used in a sputtering type film forming apparatus according to a fourth invention.

FIG. 7 is a cross-sectional view showing another example of a target in which a recess is formed so that its diameter becomes smaller toward the bottom side, and FIG. 7A shows an example in which the recess is formed in a tapered shape. b) shows an example in which the recess is formed in a substantially stepped shape.

FIG. 8 is a perspective view showing another example of a target provided with concavities and convexities, FIG. 8A shows an example in which protrusions are formed on the flat surface portion of a cylindrical target, and FIG. An example in which a notch extending in the radial direction is formed at the tip is shown, FIG. 7C shows an example in which a concave groove extending in the circumferential direction is formed at the tip of a cylindrical target, and FIG. An example formed by a cylindrical portion is shown.

FIG. 9 is a cross-sectional view showing another example of introducing the introduced gas into the inner peripheral portion of the cylindrical target in the target according to the fourth invention.

FIG. 10 is a sectional view showing a main part of a sputtering type film forming apparatus according to a fourth invention.

FIG. 11 is a diagram showing an example in which an ionization electrode is provided in an ionization device in a sputtering device according to a fourth invention.

FIG. 12 is a cross-sectional view showing a schematic configuration of a conventional sputtering type film forming apparatus.

[Explanation of reference numerals] 1 chamber 2 film forming chamber 3 substrate 6 target 10 discharge chamber 11 sputtered particles 21 discharge device 22 electrode 23 partition wall 24 nozzle 26 discharge device 27 lid member 29 target 32 discharge device 33 main body 33a partition wall 34 target 34a recess 34e Protrusion 34f Notch 34g Annular groove 34i Column 35 Electrode 36 Discharger 37 Target 38 Discharger 39 Target 40 Electrode 41 Electrode 51 Ionizer 52 Electron 53 Ionization filament 54 Grid

[Procedure Amendment 2]

[Document name to be corrected] Drawing

[Name of item to be corrected] Figure 1

[Correction method] Change

[Correction content]

[Figure 1]

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Kenichiro Yamanishi 8-1-1 Tsukaguchi Honcho, Amagasaki City, Hyogo Prefecture Sanryo Electric Co., Ltd. Production Technology Laboratory (72) Masaaki Tanaka 8-chome Tsukaguchi Honcho, Amagasaki City, Hyogo Prefecture No. 1 in Sanryoki Electric Co., Ltd. Production Technology Laboratory

Claims (5)

[Claims] 1. A target is sputtered by discharge in a discharge device, and sputtered particles emitted from the target are caused to flow by a carrier gas into a film forming chamber provided in series in the discharge device to be deposited on a substrate in the film forming chamber. In the sputtering type film forming apparatus, a partition having a nozzle having a small diameter opening is provided between the discharge chamber and the film forming chamber of the discharge apparatus. 2. A target is sputtered by discharge in a discharge device, and sputtered particles emitted from the target are flown by a carrier gas into a film forming chamber provided in series in the discharge device to be deposited on a substrate in the film forming chamber. In the sputtering type film forming apparatus, a nozzle having a small diameter opening is formed between the discharge chamber and the film forming chamber of the discharge device, and a partition wall which is a part of the wall of the discharge chamber is provided to form this discharge chamber. The sputtering film forming apparatus is characterized in that the wall to be formed is formed of a target and a dielectric having a low sputtering rate. 3. A target is sputtered by a discharge in a discharge device, and sputtered particles emitted from the target are caused to flow by a carrier gas into a film forming chamber provided in series in the discharge device to be deposited on a substrate in the film forming chamber. In the sputtering type film forming apparatus, a partition wall in which a nozzle having a small diameter opening is formed is provided between the discharge chamber and the film forming chamber of the discharge device, and at least the outer peripheral wall of the discharge chamber in the discharge device has a sputtering rate. And a sputtering electrode is disposed on the outer peripheral portion of this outer peripheral wall made of a dielectric material. 4. The sputtering film forming apparatus according to claim 1, wherein the target is provided with irregularities in the sputtering film forming apparatus. 5. The sputtering type film forming apparatus according to claim 1, wherein a filament for emitting thermoelectrons and an electron acceleration grid are provided on the substrate side of the nozzle, and the thermoelectrons are added to the sputtered particles flowing from the nozzle into the film forming chamber. A sputtering type film forming apparatus, characterized in that an ionization device for colliding and ionizing the film is provided.