JPH0621412A - Manufacture of shading cap glass of solid-state image sensing device - Google Patents

Manufacture of shading cap glass of solid-state image sensing device

Info

Publication number
JPH0621412A
JPH0621412A JP4194853A JP19485392A JPH0621412A JP H0621412 A JPH0621412 A JP H0621412A JP 4194853 A JP4194853 A JP 4194853A JP 19485392 A JP19485392 A JP 19485392A JP H0621412 A JPH0621412 A JP H0621412A
Authority
JP
Japan
Prior art keywords
light
layer
solid
semiconductor element
glass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4194853A
Other languages
Japanese (ja)
Other versions
JP2785595B2 (en
Inventor
Nobuhiro Murakami
信広 村上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toppan Inc
Original Assignee
Toppan Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toppan Printing Co Ltd filed Critical Toppan Printing Co Ltd
Priority to JP4194853A priority Critical patent/JP2785595B2/en
Publication of JPH0621412A publication Critical patent/JPH0621412A/en
Application granted granted Critical
Publication of JP2785595B2 publication Critical patent/JP2785595B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Landscapes

  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To prevent a malfunction based on unnecessary light and to prevent oxygen from entering the surface of a solid-state image sensing element by performing printing with ink on a transparent substrate and baking the ink, thereafter by providing a light filter layer and then by forming a sealer layer. CONSTITUTION:First, a light absorption layer 18 is printed on a glass substrate 12 with silk screen ink mainly composed of glass. Then, AR coat is applied to both faces of the glass substrate 12 so that a light filter layer 14 is formed. Further, silk screen printing is performed on the outermost periphery of the glass substrate 12 other than the light filter layer 14 so that a sealer layer is printed. After printing, the sealer layer 16 is formed by baking so that a shading cap glass 10 is manufactured. Thus, it is possible to obtain the shading cap glass, which can prevent a malfunction based on unnecessary light and can be tightly bonded to the surface of a solid-state image sensing element to surely prevent oxygen from entering and further can stably maintain properties of the light absorption layer at the time of heat bonding.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は入射光線を検知して電気
信号に変換する光電半導体素子とこの光電半導体素子の
周囲に配置された電気配線とを備える固体撮像装置の表
面外周部に熱接着されて酸素の侵入を防止すると共に紫
外線や赤外線等の不必要な波長の光線を遮断する遮光キ
ャップガラスの製造方法に関し、さらに詳細には、安価
かつ容易に製造でき、しかも端部から入射する光線等の
不必要な光線に基づく誤動作を防ぎ、固体撮像素子表面
に緊密に接着して酸素の侵入を確実に防止することので
きる遮光キャップガラスの製造方法に関するものであ
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device having a photoelectric semiconductor element for detecting an incident light beam and converting it into an electric signal and an electric wiring arranged around the photoelectric semiconductor element, and thermally bonding it to the outer peripheral portion of the surface of a solid-state imaging device. The present invention relates to a method for producing a light-shielding cap glass that prevents entry of oxygen and blocks rays of unnecessary wavelengths such as ultraviolet rays and infrared rays. More specifically, it can be produced inexpensively and easily, and a ray incident from an end portion. The present invention relates to a method of manufacturing a light-shielding cap glass capable of preventing malfunction due to unnecessary light rays such as the above and tightly adhering to the surface of a solid-state image sensor to reliably prevent oxygen from entering.

【0002】[0002]

【従来の技術】周知のように、固体撮像装置は、その略
中央部表面に入射光線を検知して電気信号に変換する光
電半導体素子とこうして生じた電気信号を転送する配線
とをその周囲に備えるもので、一般には、半導体パッケ
ージの中央部位に凹部を設けてこの凹部に上記光電半導
体と電気配線を収容し、更にこの上記光電半導体と電気
配線の表面にキャップガラスを重ね、両者をキャップガ
ラスの外周部で気密に熱接着して外部酸素の侵入を防止
することにより、上記光電気半導体素子が外部酸素によ
って劣化することを防いでいる。
2. Description of the Related Art As is well known, in a solid-state image pickup device, a photoelectric semiconductor element for detecting an incident light beam and converting it into an electric signal on a substantially central surface thereof and a wiring for transmitting the electric signal thus generated are provided around the photoelectric semiconductor element. Generally, a recess is provided in the central portion of the semiconductor package to accommodate the photoelectric semiconductor and the electric wiring in the recess, and a cap glass is further laid on the surfaces of the photoelectric semiconductor and the electric wiring. By heat-sealing airtightly at the outer peripheral portion to prevent the entry of external oxygen, the photoelectric semiconductor element is prevented from being deteriorated by external oxygen.

【0003】このように、固体撮像素子のキャップガラ
スは外部酸素の侵入を防止して光電半導体素子の寿命を
増大する目的で使用されているが、この目的に加えて、
紫外線や赤外線等の不必要な波長の光線を遮断すると共
に端部から入射する光線等の不必要な光線が上記光電半
導体素子に入射して誤動作を生じさせることを防止する
目的を合わせ持つことがある。
As described above, the cap glass of the solid-state image pickup device is used for the purpose of preventing the invasion of external oxygen and extending the life of the photoelectric semiconductor device. In addition to this purpose,
It may also have the purpose of blocking rays of unnecessary wavelengths such as ultraviolet rays and infrared rays and of preventing unnecessary rays such as rays incident from the ends from entering the photoelectric semiconductor element and causing malfunction. is there.

【0004】紫外線等の不必要な波長の光線を遮断する
ためには、遮光キャップの透明基板上にはこのような光
線を遮断する光フィルター層が設けられる。
In order to block rays of unnecessary wavelengths such as ultraviolet rays, an optical filter layer for blocking such rays is provided on the transparent substrate of the light shielding cap.

【0005】また、端部から入射する光線等の不必要な
光線は二つの原因で生じることが一般に知られている。
すなわち、その原因の一つは光電半導体素子に対して斜
め方向から光線が入射する場合であり、こうして斜め方
向から入射した光線により光電半導体素子から不必要な
電気信号が発生する。また、第2の原因は、入射光線が
上記光電半導体素子表面で反射し、この反射光線がキャ
ップガラス表面で再度反射し、こうして生じた多重反射
光線が光電半導体素子に再び入射する場合であり、同様
に光電半導体素子から不必要な電気信号が発生する。
Further, it is generally known that unnecessary light rays such as light rays incident from the ends are generated by two causes.
That is, one of the causes is that a light ray is incident on the photoelectric semiconductor element in an oblique direction, and an unnecessary electric signal is generated from the photoelectric semiconductor element by the light ray incident in an oblique direction. A second cause is that incident light rays are reflected on the surface of the photoelectric semiconductor element, the reflected light rays are reflected again on the surface of the cap glass, and the multiple reflected light rays thus generated are incident on the photoelectric semiconductor element again. Similarly, an unnecessary electric signal is generated from the photoelectric semiconductor element.

【0006】上記第1の原因を構成する斜め入射光線を
遮断するため、固体撮像装置の上記配線部位に遮光層を
設けた遮光キャップガラスは公知である。また、上記第
1の原因を構成する斜め入射光線を遮断し、第2の原因
を構成する多重反射光線を吸収するため、同様に上記配
線部位に光吸収層を設けた遮光キャップガラスも公知で
あり、例えば、金属又は金属酸化物の蒸着膜により遮光
層や光吸収層を構成したもの(特開昭63-62358号公
報)、あるいは黒色成形物を配置して光吸収層を構成し
たもの(特開昭 62-249103号公報)、もしくは熱接着の
ためのシーラー層を黒色顔料を含む熱硬化性樹脂を塗布
して構成し、このシーラー層に光吸収層の機能を併有さ
せたもの(特開平2-177568号公報)等がある。
A light-shielding cap glass provided with a light-shielding layer at the wiring portion of the solid-state image pickup device is known in order to block the obliquely incident light rays constituting the first cause. Further, a light-shielding cap glass provided with a light absorbing layer on the above wiring portion is also known in order to block the obliquely incident light rays constituting the first cause and absorb the multiple reflected light rays constituting the second cause. There is, for example, a light-shielding layer or a light-absorbing layer formed of a metal or metal oxide vapor-deposited film (JP-A-63-62358), or a light-absorbing layer formed by disposing a black molded article ( (Japanese Patent Laid-Open No. 62-249103), or a sealer layer for thermal adhesion is formed by coating a thermosetting resin containing a black pigment, and the sealer layer also has the function of a light absorbing layer ( Japanese Patent Laid-Open No. 2-177568).

【0007】これらの先行技術のうち、その製造が容易
であり、また安価である点で、黒色顔料を含む熱硬化性
樹脂を塗布してシーラー層を構成したものは優れたもの
であった。
Among these prior arts, those having a sealer layer formed by coating a thermosetting resin containing a black pigment were excellent in that they were easy to manufacture and were inexpensive.

【0008】[0008]

【発明が解決しようとする課題】しかしながら、上記先
行技術においては、シーラー層を構成する熱硬化性樹脂
が黒色顔料を含んでいるため、固体撮像装置に熱接着し
た際の接着力が弱く、耐久性に劣るという問題点があっ
た。
However, in the above-mentioned prior art, since the thermosetting resin forming the sealer layer contains a black pigment, the adhesive force when heat-bonded to the solid-state image pickup device is weak, and the durability is low. There was a problem that it was inferior in sex.

【0009】一方、このシーラー層と光吸収層のそれぞ
れの機能を分離し、透明基板上に黒色顔料を含む熱硬化
性樹脂を塗布して光吸収層を構成し、またこのような顔
料を含有しない熱硬化性樹脂を印刷してシーラー層を構
成することもできるが、かかる場合には、シーラー層を
加熱乾燥する際に光吸収層に気泡が生じてその性能が劣
化するという問題点があった。
On the other hand, the respective functions of the sealer layer and the light absorbing layer are separated, and a thermosetting resin containing a black pigment is applied on the transparent substrate to form the light absorbing layer. Although the sealer layer can be formed by printing a thermosetting resin that does not exist, in such a case, there is a problem that air bubbles are generated in the light absorbing layer when the sealer layer is heated and dried, and its performance is deteriorated. It was

【0010】また、かかる光吸収層をガラス粉末を含む
インキにより印刷・焼成すれば、極めて耐久性にすぐれ
た光吸収層が形成できるが、かかるインキの焼成はガラ
ス粉末が溶融する温度を必要とするため、上記光フィル
ター層が劣化するという問題点があった。
Further, when the light absorbing layer is printed and baked with an ink containing glass powder, a light absorbing layer having excellent durability can be formed. However, the baking of the ink requires a temperature at which the glass powder melts. Therefore, there is a problem that the optical filter layer is deteriorated.

【0011】本発明はかかる従来技術の欠点に鑑みてな
されたもので、安価かつ容易に製造でき、しかも不必要
な光線に基づく誤動作を防ぎ、固体撮像素子表面に緊密
に接着して酸素の侵入を確実に防止することのできる遮
光キャップガラスの製造方法を提供することを目的とす
る。
The present invention has been made in view of the above-mentioned drawbacks of the prior art, can be manufactured inexpensively and easily, prevents malfunctions caused by unnecessary light rays, and adheres tightly to the surface of a solid-state image pickup device to inject oxygen. It is an object of the present invention to provide a method for manufacturing a light-shielding cap glass capable of reliably preventing the above.

【0012】[0012]

【課題を解決するための手段】すなわち、本発明の固体
撮像装置の遮光キャップの製造方法は、入射光線を検知
して電気信号に変換する光電半導体素子とこの光電半導
体素子の周囲に配置された電気配線とを備える固体撮像
装置の表面外周部に気密に熱接着され、かつ上記入射光
線を透過させて光半導体素子に入射させる透明基板と、
この透明基板上に設けられ、不必要な波長の光線を遮断
する光フィルター層と、外部から上記電気配線部位に入
射する光線及び上記光電半導体素子表面で反射する光線
を吸収する光吸収層と、この光吸収層の外周に設けら
れ、上記固体撮像装置の表面外周部に熱接着されるシー
ラー層とを備える遮光キャップガラスの製造方法であっ
て、上記透明基板の電気配線に対応する部位上にガラス
粉末と黒色顔料を含む印刷インキを印刷し焼成した後、
上記光フィルター層を設け、次いで上記シーラー層を形
成することを特徴とする。
That is, according to the method of manufacturing a light-shielding cap for a solid-state image pickup device of the present invention, a photoelectric semiconductor element for detecting an incident light beam and converting it into an electric signal and a photoelectric semiconductor element arranged around the photoelectric semiconductor element. A transparent substrate which is hermetically heat-bonded to the outer peripheral portion of the surface of a solid-state imaging device including electric wiring, and which transmits the incident light beam and makes it enter the optical semiconductor element,
An optical filter layer provided on this transparent substrate, which blocks light rays of unnecessary wavelengths, and a light absorption layer which absorbs light rays incident on the electric wiring portion from the outside and light rays reflected on the photoelectric semiconductor element surface, A method of manufacturing a light-shielding cap glass, comprising: a sealer layer provided on the outer circumference of the light absorption layer and thermally bonded to the outer circumference of the surface of the solid-state imaging device, the method comprising: After printing and printing a printing ink containing glass powder and black pigment,
The above-mentioned optical filter layer is provided, and then the above-mentioned sealer layer is formed.

【0013】本発明においては光フィルター層は光電半
導体素子に紫外線、赤外線等の不要な波長の光が入射す
るのを防止するために用いられ、このような目的で用い
られる種々の材料のものが用いられる。
In the present invention, the optical filter layer is used to prevent light of unnecessary wavelengths such as ultraviolet rays and infrared rays from entering the photoelectric semiconductor element, and various materials used for such purpose are used. Used.

【0014】光吸収層は、入射した光が、光電半導体素
子の外周の電気的接続部分に入り、反射してフレアーな
どを起こさない様にするため、光吸収層の透過窓及び最
外周のシーラー層の形成部分を除き、光が入射しないよ
うにしたものである。
The light absorbing layer prevents the incident light from entering the electrical connection portion on the outer periphery of the photoelectric semiconductor element and reflecting it to cause flare and the like. Therefore, the light absorbing layer has a transmission window and a sealer on the outermost periphery. Except for the portion where the layer is formed, light is prevented from entering.

【0015】[0015]

【作用】本発明によれば、透明基板上にガラス粉末と黒
色顔料を含む印刷インキを印刷し、焼成した後に光フィ
ルター層を設けることにより、光フィルター層の特性を
損なうこともなく、また接着前に焼成することによる変
質やガス発生による光電半導体素子への悪影響もない。
According to the present invention, a printing ink containing glass powder and a black pigment is printed on a transparent substrate, and an optical filter layer is provided after firing, so that the characteristics of the optical filter layer are not impaired and adhesion is achieved. There is no adverse effect on the photoelectric semiconductor element due to alteration or gas generation due to the previous firing.

【0016】またシーラー層は光吸収層と別途形成する
ため、接着シール性の優れたものを選択でき、優れた接
着シール性が得られる。
Further, since the sealer layer is formed separately from the light absorbing layer, it is possible to select one having an excellent adhesive sealing property and obtain an excellent adhesive sealing property.

【0017】すなわち、本発明の如く透明基板上に最初
に光吸収層を形成するため、各層の機能を損なうことも
なく、優れた特性の光吸収層が得られる。
That is, since the light absorbing layer is first formed on the transparent substrate as in the present invention, the light absorbing layer having excellent characteristics can be obtained without impairing the function of each layer.

【0018】[0018]

【実施例】以下、図面を参照して本発明を更に具体的に
説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in more detail below with reference to the drawings.

【0019】図1は本発明の方法の一実施例を示す断面
説明図である。
FIG. 1 is a sectional view showing an embodiment of the method of the present invention.

【0020】図1によれば、まず(イ)におけるように
ガラス基板12に、ガラスを主成分とするシルクスクリ
ーンインキによりシルクスクリーン印刷機にて光吸収層
18を印刷する。シルクスクリーンインキとして、ガラ
スフリットを主成分とし、それに黒色顔料を混合したB
1−6H(H)(KKノリタケカンパニーリミテッド)
と溶剤とを混ぜ合わせて得たインキを用いる。印刷の
ち、 585℃,2時間焼成して光吸収層18を形成する。
According to FIG. 1, first, as in (a), the light absorbing layer 18 is printed on the glass substrate 12 by a silk screen printing machine with a silk screen ink containing glass as a main component. As a silk screen ink, glass frit as a main component, mixed with a black pigment B
1-6H (H) (KK Noritake Company Limited)
Use the ink obtained by mixing the solvent and the solvent. After printing, the light absorption layer 18 is formed by baking at 585 ° C. for 2 hours.

【0021】次に、(ロ)に示すようにガラス基板12
の両面にARコートを施して、光フィルター層14を形
成する。
Next, as shown in (b), the glass substrate 12
AR coating is applied to both surfaces of the above to form the optical filter layer 14.

【0022】更に(ハ)に示すようにシーラー剤とし
て、ST−1235A(奥野製薬工業KK製)に硬化剤、お
よび溶剤を混入してシルクスクリーンインキを得、光フ
ィルター層以外の最外周のガラス基板上にシルクスクリ
ーン印刷して、シーラー層を印刷し、印刷後80℃、2時
間ベーキングしてシーラー層16を形成して、遮光キャ
ップガラス10を作成する。前記のシーラー剤はシール
温度は 200℃のものである。
Further, as shown in (c), a curing agent and a solvent are mixed into ST-1235A (manufactured by Okuno Chemical Industry Co., Ltd.) as a sealer to obtain a silk screen ink, and the outermost glass other than the optical filter layer is obtained. Silk screen printing is performed on the substrate to print a sealer layer, and after printing, the sealer layer 16 is formed by baking at 80 ° C. for 2 hours to form the light shielding cap glass 10. The sealing agent has a sealing temperature of 200 ° C.

【0023】図2は本発明の方法により得られた遮光キ
ャップガラスを用いた固体撮像装置の概略断面図であ
る。
FIG. 2 is a schematic sectional view of a solid-state image pickup device using a light-shielding cap glass obtained by the method of the present invention.

【0024】上記の如く得られた遮光キャップガラス1
0を、光電半導体素子60がCCD溝の中に収納され、
ワイヤーボンディングされた固体撮像装置パッケージ5
0の遮光ガラス溝に配置し、 200℃、 1.5Kg/cm2 の条
件で加熱加圧し、接着シールして図2に示すような固体
撮像装置を完成した。
Light-shielding cap glass 1 obtained as described above
0, the photoelectric semiconductor element 60 is stored in the CCD groove,
Wire-bonded solid-state imaging device package 5
It was placed in a light-shielding glass groove of 0, heated and pressed under the conditions of 200 ° C. and 1.5 kg / cm 2 , and adhesively sealed to complete the solid-state imaging device as shown in FIG.

【0025】[0025]

【発明の効果】以上説明したように本発明の製造方法に
より、不必要な光線に基づく誤動作を防ぎ、かつ固体撮
像素子表面に緊密に接着して酸素の侵入を確実に防止
し、更に熱接着する際に光吸収層の性能を安定に維持す
ることのできる遮光キャップガラスを提供することがで
きる。
As described above, according to the manufacturing method of the present invention, malfunctions due to unnecessary light rays are prevented, and the solid image pickup device surface is tightly adhered to surely prevent the invasion of oxygen. It is possible to provide a light-shielding cap glass that can stably maintain the performance of the light absorption layer when the above is performed.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の方法の一実施例を示す断面説明図であ
る。
FIG. 1 is a cross-sectional explanatory view showing an embodiment of the method of the present invention.

【図2】本発明の方法により得られた遮光キャップガラ
スを用いた固体撮像装置の断面図である。
FIG. 2 is a cross-sectional view of a solid-state imaging device using a light-shielding cap glass obtained by the method of the present invention.

【図3】本発明の方法により得られた遮光キャップガラ
スを用いた固体撮像装置の遮光キャップガラスを外した
状態を示す斜視図である。
FIG. 3 is a perspective view showing a state in which a light shielding cap glass is removed from a solid-state imaging device using the light shielding cap glass obtained by the method of the present invention.

【符号の説明】[Explanation of symbols]

10 遮光キャップガラス 12 ガラス基板 14 光フィルター層 16 シーラー層 18 光吸収層 20 透過窓 50 固体撮像装置パッケージ 52 ピン 54 配線 60 光電半導体素子 62 カラーフィルター 10 Light-shielding cap glass 12 Glass substrate 14 Optical filter layer 16 Sealer layer 18 Light absorption layer 20 Transmission window 50 Solid-state image pickup device package 52 Pins 54 Wiring 60 Photoelectric semiconductor element 62 Color filter

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 入射光線を検知して電気信号に変換する
光電半導体素子とこの光電半導体素子の周囲に配置され
た電気配線とを備える固体撮像装置の表面外周部に気密
に熱接着され、かつ上記入射光線を透過させて光半導体
素子に入射させる透明基板と、この透明基板上に設けら
れ、不必要な波長の光線を遮断する光フィルター層と、
外部から上記電気配線部位に入射する光線及び上記光電
半導体素子表面で反射する光線を吸収する光吸収層と、
この光吸収層の外周に設けられ、上記固体撮像装置の表
面外周部に熱接着されるシーラー層とを備える遮光キャ
ップガラスの製造方法であって、上記透明基板の電気配
線に対応する部位上にガラス粉末と黒色顔料を含む印刷
インキを印刷し焼成した後、上記光フィルター層を設
け、次いで上記シーラー層を形成することを特徴とする
固体撮像装置の遮光キャップの製造方法。
1. A solid-state image pickup device comprising an optoelectronic semiconductor element for detecting an incident light beam and converting it into an electric signal, and an electric wiring arranged around the optoelectronic semiconductor element, which is airtightly heat-bonded to an outer peripheral portion of a surface, and A transparent substrate which transmits the incident light and makes it enter the optical semiconductor element, and an optical filter layer which is provided on the transparent substrate and blocks light having an unnecessary wavelength,
A light absorbing layer that absorbs a light ray incident on the electric wiring portion from the outside and a light ray reflected on the photoelectric semiconductor element surface,
A method of manufacturing a light-shielding cap glass, comprising: a sealer layer provided on the outer circumference of the light absorption layer and thermally bonded to the outer circumference of the surface of the solid-state imaging device, the method comprising: A method for manufacturing a light-shielding cap for a solid-state imaging device, comprising: printing a printing ink containing glass powder and a black pigment, firing the ink, providing the optical filter layer, and then forming the sealer layer.
JP4194853A 1992-06-29 1992-06-29 Method of manufacturing light-shielding cap glass for solid-state imaging device Expired - Lifetime JP2785595B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4194853A JP2785595B2 (en) 1992-06-29 1992-06-29 Method of manufacturing light-shielding cap glass for solid-state imaging device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4194853A JP2785595B2 (en) 1992-06-29 1992-06-29 Method of manufacturing light-shielding cap glass for solid-state imaging device

Publications (2)

Publication Number Publication Date
JPH0621412A true JPH0621412A (en) 1994-01-28
JP2785595B2 JP2785595B2 (en) 1998-08-13

Family

ID=16331372

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4194853A Expired - Lifetime JP2785595B2 (en) 1992-06-29 1992-06-29 Method of manufacturing light-shielding cap glass for solid-state imaging device

Country Status (1)

Country Link
JP (1) JP2785595B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100448014C (en) * 2005-07-08 2008-12-31 采钰科技股份有限公司 Image sensing-detecting chip group
JP2014142644A (en) * 2014-02-12 2014-08-07 Semiconductor Energy Lab Co Ltd Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100448014C (en) * 2005-07-08 2008-12-31 采钰科技股份有限公司 Image sensing-detecting chip group
JP2014142644A (en) * 2014-02-12 2014-08-07 Semiconductor Energy Lab Co Ltd Semiconductor device

Also Published As

Publication number Publication date
JP2785595B2 (en) 1998-08-13

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