JPH06202311A - Mis-registration measuring method - Google Patents
Mis-registration measuring methodInfo
- Publication number
- JPH06202311A JPH06202311A JP97793A JP97793A JPH06202311A JP H06202311 A JPH06202311 A JP H06202311A JP 97793 A JP97793 A JP 97793A JP 97793 A JP97793 A JP 97793A JP H06202311 A JPH06202311 A JP H06202311A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- inspection
- patterns
- misalignment
- measuring method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、例えば、半導体装置や
液晶装置の製造の際にマスクやレチクルの合せずれを自
動的に測定する合せずれ測定方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a misalignment measuring method for automatically measuring misalignment of a mask or a reticle when manufacturing a semiconductor device or a liquid crystal device.
【０００２】[0002]
【従来の技術】例えば、半導体装置や液晶装置等の製造
においては、複数のマスクやレチクルを用いて順次回路
パタ−ンが形成される。回路パタ−ン形成の各工程にお
いてマスク（或いはレチクル）が所定の精度で位置合せ
されていなければ、形成された回路が十分に機能せず、
不良品が生じる。そこで、一般には、十字マ−クやバ−
ニアパタ−ンを用いて、目視による合せずれ測定・検査
が行われている。2. Description of the Related Art For example, in the manufacture of semiconductor devices, liquid crystal devices, etc., circuit patterns are sequentially formed using a plurality of masks and reticles. If the mask (or reticle) is not aligned with a predetermined accuracy in each step of forming the circuit pattern, the formed circuit will not function sufficiently,
Defective product occurs. Therefore, in general, cross marks and bars
The misalignment is visually measured and inspected using a near pattern.
【０００３】[0003]
【発明が解決しようとする課題】ところで、上述のよう
に十字マ−クを重ね合せる合せずれ測定方法は合せずれ
の限界を調べるための方法であり、ずれ量の定量値を求
めることはできない。The misalignment measuring method in which the cross marks are superposed as described above is a method for examining the limit of misalignment, and a quantitative value of the misalignment cannot be obtained.
【０００４】また、十字マ−クを利用した測定方法は、
人が目視によりＯＫ／ＮＧの判定を下すのであれば有効
であるが、例えば互いに比較される複数のマ−ク（パタ
−ン）の像を撮像素子に入力して自動的に合せずれ測定
を行う自動測定には向いていない。つまり、マ−クの境
界位置が不明確になり易く、ずれ量が限界値付近である
場合にはＯＫ／ＮＧの判断が難しい。The measuring method using a cross mark is
This is effective if a person visually makes an OK / NG determination, but for example, the images of a plurality of marks (patterns) to be compared with each other are input to the image sensor to automatically measure the misalignment. Not suitable for automatic measurements. That is, the boundary position of the mark tends to be unclear, and it is difficult to judge OK / NG when the deviation amount is near the limit value.
【０００５】さらに、バ−ニアパタ−ンを基にして合せ
ずれを自動測定する場合には、ずれ量の定量値は求まる
が、パタ−ンの形状が複雑すぎるため、十分な信頼性を
得ることが難しい。Further, when the misalignment is automatically measured based on the vernier pattern, a quantitative value of the misalignment amount can be obtained, but since the pattern shape is too complicated, sufficient reliability can be obtained. Is difficult.
【０００６】また、本出願人により図４に示すような自
動検査用パタ−ン１…が開示されている（例えば、特願
平３−２８６２５６号明細書）。しかし、この自動検査
用パタ−ン１…を用いた合せずれ測定方法においては、
各製造工程（ＰＥＰ）毎にどのパタ−ンが検査に用いら
れているのか明らかではなく、また、検査すべきパタ−
ンを捜し出すことも困難である。本発明の目的とすると
ころは、所望のパタ−ンを自動的に且つ正確に求めるこ
とが可能な合せずれ測定方法を提供することにある。Further, the applicant has disclosed an automatic inspection pattern 1 ... As shown in FIG. 4 (for example, Japanese Patent Application No. 3-286256). However, in this misalignment measuring method using the automatic inspection pattern 1 ...
It is not clear which pattern is used for inspection in each manufacturing process (PEP), and the pattern to be inspected.
It is also difficult to find the right one. It is an object of the present invention to provide a misalignment measuring method capable of automatically and accurately obtaining a desired pattern.
【０００７】[0007]
【課題を解決するための手段および作用】上記目的を達
成するために本発明は、各製造工程毎に検査パタ−ンを
形成し、この検査パタ−ンを基にして各製造工程毎に合
せずれを測定する合せずれ測定方法において、検査パタ
−ンよりも長い直線部分を有する位置判断用パタ−ンを
利用し、この位置判断用パタ−ンを基にして検査パタ−
ンの位置を判断することを特徴とすることにある。こう
することによって本発明は、所望の検査パタ−ンを自動
的に且つ正確に求められるようにしたことにある。In order to achieve the above-mentioned object, the present invention forms an inspection pattern for each manufacturing process, and adjusts each manufacturing process based on this inspection pattern. In the misalignment measuring method for measuring the displacement, a position determining pattern having a straight line portion longer than the inspection pattern is used, and the inspection pattern is based on this position determining pattern.
The feature is to judge the position of the computer. By doing so, the present invention is to automatically and accurately obtain a desired inspection pattern.
【０００８】[0008]
【実施例】以下、本発明の一実施例を図面に基づいて説
明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings.
【０００９】図１〜図３は本発明の一実施例を示してお
り、図１の符号１１〜１８は検査パタ−ンである。各検
査パタ−ン１１〜１８は２つずつのＬ字状パタ−ン１９
ａ、１９ｂ及び直線状パタ−ン２０…、２１…を要素と
して構成されている。各検査パタ−ン１１〜１８は４つ
を一纏めとして所定位置に配置されており、合計８つの
検査パタ−ン１１〜１８により２つのパタ−ン群２２、
２３が形成されている。1 to 3 show an embodiment of the present invention, and reference numerals 11 to 18 in FIG. 1 denote inspection patterns. Each inspection pattern 11-18 has two L-shaped patterns 19 each.
a, 19b and linear patterns 20 ..., 21 ... Each of the inspection patterns 11 to 18 is arranged at a predetermined position as a group of four, and a total of eight inspection patterns 11 to 18 provide two pattern groups 22,
23 is formed.
【００１０】そして、一方（図中の左側）のパタ−ン群
２２には第１〜第３ＰＥＰ(Photo Engraving Process)
に順に対応した検査パタ−ン１１〜１３が形成されてお
り、他方（図中の右側）のパタ−ン群２３には第４〜第
６ＰＥＰに順に対応した検査パタ−ン１５〜１７が形成
されている。The first to third PEPs (Photo Engraving Process) are provided in one pattern group 22 (on the left side in the figure).
The inspection patterns 11 to 13 corresponding to the above are sequentially formed, and the inspection patterns 15 to 17 corresponding to the fourth to sixth PEPs are formed in the other (right side in the drawing) pattern group 23. Has been done.
【００１１】また、各検査パタ−ン１１〜１８を構成す
るＬ字状パタ−ン１９…及び直線状パタ−ン２２…、２
３…の線幅、及び、間隔は、光学系の分解能を考慮し
て、例えば少なくとも２μｍ以上に設定されている。Further, L-shaped patterns 19 and linear patterns 22 ... 2 constituting the respective inspection patterns 11 to 18 are formed.
The line width of 3 ... And the interval are set to, for example, at least 2 μm or more in consideration of the resolution of the optical system.
【００１２】ここで、本実施例においては、８つの検査
パタ−ン１１〜１６のうち６つの検査パタ−ン（第１〜
第３の検査パタ−ン１１〜１３、及び、第５〜第６の検
査パタ−ン１５〜１７）のみが合せずれ測定に利用され
る。そして、利用される検査パタ−ンの数や組合せ等
は、製造対象物の種類（半導体装置や液晶装置など）に
よって異なる。In this embodiment, six inspection patterns (first to first) out of the eight inspection patterns 11 to 16 are used.
Only the third inspection patterns 11 to 13 and the fifth to sixth inspection patterns 15 to 17) are used for the misalignment measurement. The number and combination of inspection patterns used differ depending on the type of manufacturing target (semiconductor device, liquid crystal device, etc.).
【００１３】さらに、図１中に符号２４で示すのは位置
判断用パタ−ンである。この位置判断用パタ−ン２４は
直線部分としての３つの直線状パタ−ン２５、２６、２
７により構成されている。そして、これらのうち１つの
直線状パタ−ン２５は２つのパタ−ン群２２、２３の中
心を通過しており、他の２つの直線状パタ−ン２６、２
７は共に前記直線状パタ−ン２５に垂直に交わりながら
各パタ−ン群２２、２３の中心をそれぞれ通過してい
る。そして、各パタ−ン群２２、２３において、位置判
断用パタ−ン２４が各検査パタ−ン１１〜１４、１５〜
１８の間を略均等に区画している。Further, reference numeral 24 in FIG. 1 is a position determining pattern. The position determining pattern 24 includes three linear patterns 25, 26, 2 as straight line portions.
It is composed of 7. One of these linear patterns 25 passes through the center of the two pattern groups 22 and 23, and the other two linear patterns 26 and 2
7 and 7 pass through the centers of the respective pattern groups 22 and 23 while intersecting with the linear pattern 25 at right angles. Then, in each of the pattern groups 22 and 23, the position determining pattern 24 has the inspection patterns 11 to 14 and 15 to 15 respectively.
The space between 18 is divided substantially evenly.
【００１４】また、位置判断用パタ−ン２４を構成する
直線状パタ−ン２５、２６、２７の幅、及び、各直線状
パタ−ン２５、２６、２７と各検査パタ−ン１１〜１８
との間隔は、例えば少なくとも２μｍ以上に設定されて
いる。Further, the width of the linear patterns 25, 26, 27 constituting the position determining pattern 24, and the respective linear patterns 25, 26, 27 and the inspection patterns 11-18.
The distance between and is set to, for example, at least 2 μm or more.
【００１５】前述の各パタ−ンのうち、第１ＰＥＰにお
いては、図１中に斜線が記された部分、即ち位置判断用
パタ−ン２４、第１ＰＥＰ用の検査パタ−ン１１と、他
の各検査パタ−ン１２〜１８の１つのＬ字状パタ−ン１
９ａ…とが形成される。そして、第２ＰＥＰ以降におい
ては、各ＰＥＰに対応する検査パタ−ンのうち、１つの
Ｌ字状パタ−ン１９ａ…を除いた他のＬ字状パタ−ン１
９ｂ…、及び、直線状パタ−ン２０…が形成されて、各
検査パタ−ン１２、１３、１５〜１７が順に完成する。
つぎに、合せずれ測定の手順を説明する。Of the above-mentioned patterns, in the first PEP, the hatched portion in FIG. 1, that is, the position determination pattern 24, the inspection pattern 11 for the first PEP, and other parts. One L-shaped pattern 1 of each inspection pattern 12-18
9a ... Are formed. Then, in the second and subsequent PEPs, among the inspection patterns corresponding to the respective PEPs, the other L-shaped patterns 1 except one L-shaped pattern 19a.
.. and linear patterns 20 .. are formed to complete the inspection patterns 12, 13, 15 to 17 in sequence.
Next, a procedure for measuring misalignment will be described.
【００１６】まず、例えば光学式の測定顕微鏡が用いら
れ、測定顕微鏡の視野内に検査パタ−ン１１〜１８及び
位置判断用パタ−ン２４がおさめられる。このとき、測
定顕微鏡の視野内にパタ−ン群２２、２３の両方をおさ
めてもよく、また、いずれか一方をおさめてもよい。First, for example, an optical measuring microscope is used, and the inspection patterns 11 to 18 and the position judging pattern 24 are set in the visual field of the measuring microscope. At this time, both the pattern groups 22 and 23 may be stored in the visual field of the measuring microscope, or either one of them may be stored.
【００１７】ここで、現在が何ＰＥＰ目であるかという
ことは予め判っている。そして、どちらのパタ−ン群２
２、２３が測定顕微鏡の視野内におさめられるかという
ことはＰＥＰ数に応じて決められ、その時の工程に合っ
たパタ−ン群が測定顕微鏡の視野内におさめられる。Here, it is known in advance how many PEPs the present is. And which pattern group 2
Whether or not 2, 23 are contained within the field of view of the measuring microscope is determined according to the number of PEPs, and a pattern group suitable for the process at that time is contained within the field of view of the measuring microscope.
【００１８】ここでは、図２（ａ）に示すように、第１
〜第３ＰＥＰに対応した検査パタ−ン１１〜１３を有す
るパタ−ン群２２のみが測定顕微鏡の視野内におさめら
れる。Here, as shown in FIG. 2A, the first
~ Only the pattern group 22 having the inspection patterns 11 to 13 corresponding to the third PEP is kept in the visual field of the measuring microscope.
【００１９】測定用顕微鏡にはＣＣＤカメラが取付けら
れており、ＣＣＤカメラは情報処理装置に接続されてい
る。そして、図２（ａ）中に示すように測定用顕微鏡の
視野内に収められた画像がＣＣＤカメラにより取込まれ
て情報処理装置へ送られる。情報処理装置においては、
目的の検査パタ−ンの位置が位置判断用パタ−ン２５を
利用して求められる。A CCD camera is attached to the measuring microscope, and the CCD camera is connected to the information processing device. Then, as shown in FIG. 2A, the image contained in the visual field of the measuring microscope is captured by the CCD camera and sent to the information processing apparatus. In the information processing device,
The position of the target inspection pattern is obtained by using the position determination pattern 25.
【００２０】すなわち、測定用顕微鏡の視野内に収めら
れた像の縦方向或いは横方向についてそれぞれ周辺分布
演算が行われ、一列毎にその列を構成する画素が加算さ
れる。本実施例においては、先ず図２（ａ）の像の縦方
向に列が設定されており、各列の加算値が上記像の横方
向に対応するよう並べられて、図２（ｂ）に示すような
加算値のグラフが得られる。That is, the peripheral distribution calculation is performed in each of the vertical direction and the horizontal direction of the image contained in the visual field of the measuring microscope, and the pixels forming the column are added for each column. In the present embodiment, first, columns are set in the vertical direction of the image of FIG. 2A, and the added values of each column are arranged so as to correspond to the horizontal direction of the image, and then, in FIG. A graph of the added value as shown is obtained.
【００２１】図２（ｂ）に示すように、加算値は測定顕
微鏡の視野内におさめられた像に応じて変化しており、
検査パタ−ン１１〜１４及び位置判断用パタ−ン２４の
輪郭線２８ａ、２８ｂと対応する列の加算値は、他の列
の加算値よりも大きくなる。さらに、検査パタ−ン１１
〜１４及び位置判断用パタ−ン２４において、直線部分
が長ければ長い程その部分に対応する列の加算値は大と
なる。As shown in FIG. 2B, the added value changes according to the image contained in the visual field of the measuring microscope.
The added values of the columns corresponding to the contour lines 28a and 28b of the inspection patterns 11 to 14 and the position determination pattern 24 are larger than the added values of the other columns. Furthermore, the inspection pattern 11
14 and the position determining pattern 24, the longer the straight line portion, the larger the added value of the column corresponding to that portion.
【００２２】測定顕微鏡の視野内におさめられた像には
位置判断用パタ−ン２４の直線状パタ−ン２６が含まれ
ており、この直線状パタ−ン２６は上記視野内を列方向
に一直線に通過している。このため、直線状パタ−ン２
６は、検査パタ−ン１１〜１４が有するいずれの直線部
分よりも長い。The image contained in the visual field of the measuring microscope includes a linear pattern 26 of the position determining pattern 24. The linear pattern 26 extends in the visual field in the column direction. It is passing in a straight line. Therefore, the linear pattern 2
6 is longer than any straight line portion of the inspection patterns 11-14.
【００２３】したがって、図２（ｂ）の周辺分布演算の
結果を示すグラフにおいて、直線状パタ−ン２６の輪郭
線２８ａ、２８ｂに対応する画素列の加算値が最も大き
くなり、グラフ中に、直線状パタ−ン２６の輪郭２８
ａ、２８ｂが明確に表される。そして、この周辺分布演
算の結果を示すグラフから、位置判断用パタ−ン２５の
直線状パタ−ン２６の位置を知ることができる。Therefore, in the graph showing the result of the marginal distribution calculation of FIG. 2B, the added value of the pixel rows corresponding to the contour lines 28a and 28b of the linear pattern 26 becomes the largest, and Contour 28 of linear pattern 26
a and 28b are clearly represented. The position of the linear pattern 26 of the position determining pattern 25 can be known from the graph showing the result of this peripheral distribution calculation.
【００２４】つぎに、測定顕微鏡の視野内におさめられ
た像の横方向（行方向）について同様に周辺分布演算が
行われ、位置判断用パタ−ン２４の他方の直線状パタ−
ン２５の位置が求められる。そして、図３中に示すよう
にＸ0 軸、Ｙ0 軸が設定され、中心位置（Ｘ0 ，Ｙ0 ）
が求められる。Next, the peripheral distribution calculation is similarly performed in the lateral direction (row direction) of the image contained in the field of view of the measuring microscope, and the other linear pattern of the position determining pattern 24 is calculated.
The position of port 25 is determined. Then, X0 axis as shown in FIG. 3, Y0-axis is set, the center position (X 0, Y 0)
Is required.
【００２５】こののち、実際に測定すべきパタ−ン（こ
こでは第１ＰＥＰのための検査パタ−ン１１）の位置
が、中心位置（Ｘ0 ，Ｙ0 ）、工程番号、及び、工程番
号に対応して予め決められている検査パタ−ン位置を基
にして求められ、図３中に示すように測定領域２９が所
望の検査パタ−ン１１を囲うように設定される。そし
て、複数の検査パタ−ン１１〜１４から選ばれた所望の
検査パタ−ン１１に対して所定の検査処理が実行され、
合せずれが測定される。After this, the position of the pattern to be actually measured (here, the inspection pattern 11 for the first PEP) is the center position (X 0 , Y 0 ), the process number, and the process number. Correspondingly determined on the basis of a predetermined inspection pattern position, the measurement region 29 is set so as to surround the desired inspection pattern 11 as shown in FIG. Then, a predetermined inspection process is executed on a desired inspection pattern 11 selected from a plurality of inspection patterns 11 to 14,
The misalignment is measured.
【００２６】上述のように本実施例においては、各検査
パタ−ン１１〜１８よりも長い直線状パタ−ン２５、２
６を有する位置判断用パタ−ン２４が用いられており、
位置判断用パタ−ン２４の大きさや形状が、混在する他
のパタ−ンと比べて大きく異なっているので、位置判断
用パタ−ン２４が他のパタ−ンに対して明確に差別化さ
れる。そして、この位置判断用パタ−ン２４を基準にし
て各検査パタ−ン１１〜１８の位置が求められる。As described above, in this embodiment, the linear patterns 25 and 2 longer than the inspection patterns 11 to 18 are used.
The position determination pattern 24 having 6 is used,
Since the size and shape of the position determining pattern 24 are greatly different from those of other mixed patterns, the position determining pattern 24 is clearly differentiated from other patterns. It Then, the positions of the respective inspection patterns 11 to 18 are obtained on the basis of the position determination pattern 24.
【００２７】したがって、所望の検査パタ−ンを間違い
なく、且つ、容易に探し出すことができる。そして、合
せずれ測定の自動化が可能になり、自動検査を実現でき
る。なお、本発明は、要旨を逸脱しない範囲で種々に変
形することが可能である。Therefore, a desired inspection pattern can be easily found without any doubt. Then, the misalignment measurement can be automated, and the automatic inspection can be realized. The present invention can be variously modified without departing from the spirit of the invention.
【００２８】[0028]
【発明の効果】以上説明したように本発明は、各製造工
程毎に検査パタ−ンを形成し、この検査パタ−ンを基に
して各製造工程毎に合せずれを測定する合せず測定方法
において、検査パタ−ンよりも長い直線部分を有する位
置判断用パタ−ンを利用し、この位置判断用パタ−ンを
基にして検査パタ−ンの位置を判断する。したがって本
発明は、所望の検査パタ−ンを自動的に且つ正確に求め
られるという効果がある。As described above, according to the present invention, the inspection pattern is formed for each manufacturing process, and the misalignment measuring method for measuring the misalignment for each manufacturing process based on this inspection pattern. In step 1, a position determining pattern having a straight line portion longer than the inspection pattern is used, and the position of the inspection pattern is determined based on this position determining pattern. Therefore, the present invention has an effect that a desired inspection pattern can be automatically and accurately obtained.
【図１】本発明の一実施例の各検査パタ−ンを示す説明
図。FIG. 1 is an explanatory view showing each inspection pattern of one embodiment of the present invention.
【図２】（ａ）は測定用顕微鏡の視野内に納められた像
を示す説明図、（ｂ）は（ａ）中の像の縦方向について
行われた周辺分布演算の結果を示すグラフ。FIG. 2A is an explanatory view showing an image contained in the visual field of the measuring microscope, and FIG. 2B is a graph showing the result of peripheral distribution calculation performed in the vertical direction of the image in FIG. 2A.
【図３】座標軸及び測定領域の設定を示す説明図。FIG. 3 is an explanatory diagram showing setting of coordinate axes and a measurement area.
【図４】従来の検査パタ−ンを示す説明図。FIG. 4 is an explanatory view showing a conventional inspection pattern.
１１〜１８…検査パタ−ン、２４…位置判断用パタ−
ン、２５、２６、２７…直線状パタ−ン。11-18 ... inspection pattern, 24 ... position determination pattern
25, 26, 27 ... Linear pattern.
Claims (1)
この検査パタ−ンを基にして各製造工程毎に合せずれを
測定する合せず測定方法において、上記検査パタ−ンよ
りも長い直線部分を有する位置判断用パタ−ンを利用
し、この位置判断用パタ−ンを基にして上記検査パタ−
ンの位置を判断することを特徴とする合せずれ測定方
法。1. An inspection pattern is formed for each manufacturing process,
In the non-alignment measuring method in which the misalignment is measured in each manufacturing process based on this inspection pattern, the position determination pattern having a straight line portion longer than the above inspection pattern is used. Based on the inspection pattern, the above inspection pattern
A misalignment measuring method characterized by determining the position of a lens.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP97793A JP2829211B2 (en) | 1993-01-07 | 1993-01-07 | Misalignment measurement method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP97793A JP2829211B2 (en) | 1993-01-07 | 1993-01-07 | Misalignment measurement method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06202311A true JPH06202311A (en) | 1994-07-22 |
| JP2829211B2 JP2829211B2 (en) | 1998-11-25 |
Family
ID=11488679
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP97793A Expired - Fee Related JP2829211B2 (en) | 1993-01-07 | 1993-01-07 | Misalignment measurement method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2829211B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100424228B1 (en) * | 2000-06-08 | 2004-03-24 | 가부시끼가이샤 도시바 | Alignment method, test method for matching, and photomask |
| JP2005175270A (en) * | 2003-12-12 | 2005-06-30 | Nikon Corp | Mark for detecting displacement |
| US9488815B2 (en) | 2012-02-08 | 2016-11-08 | Hitachi High-Technologies Corporation | Pattern evaluation method and pattern evaluation device |
| JP2018128699A (en) * | 2012-05-22 | 2018-08-16 | ケーエルエー−テンカー コーポレイション | Overlay target, system for executing overlay measurement, and method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0226225U (en) * | 1988-08-04 | 1990-02-21 |
-
1993
- 1993-01-07 JP JP97793A patent/JP2829211B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0226225U (en) * | 1988-08-04 | 1990-02-21 |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100424228B1 (en) * | 2000-06-08 | 2004-03-24 | 가부시끼가이샤 도시바 | Alignment method, test method for matching, and photomask |
| JP2005175270A (en) * | 2003-12-12 | 2005-06-30 | Nikon Corp | Mark for detecting displacement |
| JP4525067B2 (en) * | 2003-12-12 | 2010-08-18 | 株式会社ニコン | Misalignment detection mark |
| US9488815B2 (en) | 2012-02-08 | 2016-11-08 | Hitachi High-Technologies Corporation | Pattern evaluation method and pattern evaluation device |
| JP2018128699A (en) * | 2012-05-22 | 2018-08-16 | ケーエルエー−テンカー コーポレイション | Overlay target, system for executing overlay measurement, and method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2829211B2 (en) | 1998-11-25 |
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