JPH0619111A - Production of mask for phase shift - Google Patents

Production of mask for phase shift

Info

Publication number
JPH0619111A
JPH0619111A JP17680692A JP17680692A JPH0619111A JP H0619111 A JPH0619111 A JP H0619111A JP 17680692 A JP17680692 A JP 17680692A JP 17680692 A JP17680692 A JP 17680692A JP H0619111 A JPH0619111 A JP H0619111A
Authority
JP
Japan
Prior art keywords
resist
shielding film
shifter
light shielding
substrates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17680692A
Other languages
Japanese (ja)
Inventor
Shigeru Ikeda
重 池田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP17680692A priority Critical patent/JPH0619111A/en
Publication of JPH0619111A publication Critical patent/JPH0619111A/en
Pending legal-status Critical Current

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  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

PURPOSE:To enable the dimensional control of a light shielding film with high accuracy by forming shifter patterns and light shielding film patterns on respectively separate substrates and sticking the two substrates to each other in such a manner that the shifters and the light shielding films come into contact with each other, then using such substrates. CONSTITUTION:The shifter 3 is formed on the glass substrate 1 and a resist 4 is applied thereon. This resist 4 is patterned and the shifter 3 is eched with the resist 4 as a mask. The resist 4 is then removed and the substrate A consisting of the patterns of only the shifters 3 is formed. On the other hand, the light shielding film 2 is formed on the glass substrate 1 and the resist 4 is formed thereon. The resist 4 is patterned and the light shielding film 2 is etched with the resist 4 as a mask. The resist 4 is then removed and the substrate B consisting of the patterns of only the light shielding films 2 is produced. The substrates A and B are subjected to a defect inspection at the point of this time and thereafter the substrates A and B are so stuck to each other in such a manner that the respective front surfaces of the shifers 3 and the light shielding film 2 come into contact with each other.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は、位相シフト法を用い
たリソグラフィーに使用するホトマスクの製造方法に関
するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a photomask used for lithography using a phase shift method.

【0002】[0002]

【従来の技術】従来、位相シフト法に用いるホトマスク
(以下位相シフト用マスクと略す)は、シフター(例え
ばスピンオンガラス(SOG))と遮光膜(例えばクロ
ム膜)を同一基板上に互いに接して形成するというもの
であった。
2. Description of the Related Art Conventionally, a photomask used for a phase shift method (hereinafter referred to as a phase shift mask) is formed by a shifter (for example, spin-on glass (SOG)) and a light shielding film (for example, chromium film) being in contact with each other on the same substrate. Was to do.

【0003】図2に従来の位相シフト用マスクの製造方
法を示す。
FIG. 2 shows a conventional method for manufacturing a phase shift mask.

【0004】まず、ガラス基板1上に遮光膜2を形成し
たブランクス上にシフター3を形成し、その上にレジス
ト4を形成する(図2(a))。次いで、レジスト3を
パターニングし、このレジスト4をマスクとしてシフタ
ー3をエッチングしてパターニングする(図2
(b))。
First, a shifter 3 is formed on a blank having a light-shielding film 2 formed on a glass substrate 1, and a resist 4 is formed thereon (FIG. 2 (a)). Next, the resist 3 is patterned, and the shifter 3 is patterned by etching using the resist 4 as a mask (FIG. 2).
(B)).

【0005】次に、レジスト4及びシフター3をマスク
として遮光膜2をエッチングする。エッチングは、ウェ
ットエッチングを用いる(図2(c))。
Next, the light shielding film 2 is etched by using the resist 4 and the shifter 3 as a mask. Wet etching is used as the etching (FIG. 2C).

【0006】遮光膜2のエッチングは、上面、すなわち
シフター3側からガラス1方向に時間経過とともに進行
するが、エッチングの進行がガラス1面に到達してから
もなおエッチングを継続する(オーバーエッチングとい
う)ことで、遮光膜2を横方向にエッチングする(図2
(d))。その後、レジスト4を除去して図2(e)の
構造を得る。
The etching of the light-shielding film 2 progresses from the upper surface, that is, the shifter 3 side in the direction of the glass 1 with time, but the etching is continued even after the progress of the etching reaches the surface of the glass 1 (referred to as over-etching). By doing so, the light shielding film 2 is laterally etched (see FIG. 2).
(D)). After that, the resist 4 is removed to obtain the structure of FIG.

【0007】以上述べた製造方法により、シフター3と
遮光膜2は同一基板1上に形成されるというものであっ
た。
The shifter 3 and the light-shielding film 2 are formed on the same substrate 1 by the manufacturing method described above.

【0008】[0008]

【発明が解決しようとする課題】しかしながら、上記方
法で製作した位相シフト用マスクは、以下の問題点があ
る。
However, the phase shift mask manufactured by the above method has the following problems.

【0009】1.オーバーエッチングにおける遮光膜の
横方向へのエッチングの進行が、シフターと遮光膜との
密着性や、遮光膜の膜厚及び膜質により変化することか
ら、高精度での制御が困難である。
1. Since the progress of the lateral etching of the light-shielding film in the over-etching changes depending on the adhesion between the shifter and the light-shielding film and the film thickness and film quality of the light-shielding film, it is difficult to control with high accuracy.

【0010】2.前記1によって生ずる遮光膜の寸法の
バラツキにより、本位相シフト用マスクを用いた転写像
のパタン寸法にバラツキが生じる。
2. Due to the variation in the size of the light-shielding film caused by the above 1, variation occurs in the pattern dimension of the transferred image using the phase shift mask.

【0011】3.シフター及び遮光膜に欠陥が生じた場
合、検査、修正することが不可能である。
3. When defects occur in the shifter and the light shielding film, it is impossible to inspect and repair.

【0012】この発明は以上述べた問題点を除去するた
め、シフターと遮光膜をそれぞれ別な基板上に形成し、
上記基板を重ね合わせて使用する位相シフト用マスク製
造方法を提供することを目的とする。
In order to eliminate the above-mentioned problems, the present invention forms a shifter and a light-shielding film on different substrates,
It is an object of the present invention to provide a method for manufacturing a mask for phase shift, which uses the above substrates in an overlapping manner.

【0013】[0013]

【課題を解決するための手段】前記目的のため本発明
は、シフターのみのパターンから成る基板Aと遮光膜の
みのパターンから成る基板Bを製造し、その後、両基板
をシフターと遮光膜が互いに接するように重ね合わせて
使用するようにしたものである。
To achieve the above object, the present invention manufactures a substrate A having a pattern of shifters only and a substrate B having a pattern of light-shielding films only, and thereafter, the substrates are made up of shifters and light-shielding films. It is designed to be used by overlapping so as to be in contact with each other.

【0014】[0014]

【作用】前述のように本発明は、シフターパタンと遮光
膜パタンとをそれぞれ別な基板に形成し、それぞれの基
板をシフターと遮光膜が接するように貼り合わせて使用
するようにしたので遮光膜のオーバーエッチングが不要
であり、よって、遮光膜の高精度な寸法制御が可能であ
り、従って、これを使用するとき、転写像における寸法
のバラツキが小さくなる。また、別々な基板にシフター
のみまたは遮光膜のみの単層のパターンを形成するので
あるから、検査、修正が容易である。
As described above, according to the present invention, the shifter pattern and the light shielding film pattern are formed on different substrates, and the respective substrates are used so that the shifter and the light shielding film are in contact with each other. No over-etching is required, and therefore, highly accurate dimensional control of the light-shielding film is possible. Therefore, when this is used, the dimensional variation in the transferred image becomes small. Moreover, since a single-layer pattern of only the shifter or only the light-shielding film is formed on different substrates, inspection and correction are easy.

【0015】[0015]

【実施例】図1は、この発明の実施例の製造方法を示す
ものである。
FIG. 1 shows a manufacturing method of an embodiment of the present invention.

【0016】まず、基板Aとして、ガラス基板1上に3
を形成し、その上にレジスト4を塗布し(図1(A
a))、レジスト4をパターニングし(図1(A
b))、そのレジスト4をマスクとして、シフター3を
エッチングする(図1(Ac))。
First, as the substrate A, the glass substrate 1 is placed on the glass substrate 1.
Is formed, and the resist 4 is applied thereon (see FIG.
a)) and patterning the resist 4 (see FIG.
b)), the shifter 3 is etched using the resist 4 as a mask (FIG. 1 (Ac)).

【0017】次いで、レジスト4を除去することによっ
て、シフター3のみのパターンから成る基板Aを製作す
る(図1(Ad))。
Then, the resist 4 is removed to manufacture a substrate A having a pattern of only the shifter 3 (FIG. 1 (Ad)).

【0018】一方、基板Bとして、ガラス基板1上に遮
光膜2を形成し、その上にレジスト3を形成して(図1
(Ba))、レジスト4をパターニングし(図1(B
b))、次いで、レジスト4をマスクとして、遮光膜2
をエッチングする(図1(Bc))。この時、オーバー
エッチングは行なわない。
On the other hand, as the substrate B, the light shielding film 2 is formed on the glass substrate 1, and the resist 3 is formed thereon (see FIG. 1).
(Ba)) and patterning the resist 4 (see FIG.
b)), and then using the resist 4 as a mask, the light shielding film 2
Are etched (FIG. 1 (Bc)). At this time, over etching is not performed.

【0019】次に、レジスト4を除去し、遮光膜2のみ
のパターンから成る基板Bを製作する(図1(B
d))。
Next, the resist 4 is removed, and a substrate B having a pattern of only the light shielding film 2 is manufactured (see FIG.
d)).

【0020】この時点で、基板A及びBの欠陥検査を行
う。その後、基板A及びBをシフター3と遮光膜2の各
上面が接するように貼り合わせる。貼り合わせは通常用
いられる接着剤で行うことで充分である。
At this time, the defect inspection of the substrates A and B is performed. After that, the substrates A and B are bonded together so that the upper surfaces of the shifter 3 and the light shielding film 2 are in contact with each other. It is sufficient to carry out the bonding with an adhesive that is usually used.

【0021】以上述べた方法によって、製作した位相シ
フト用マスクは、従来の同一基板上にシフターと遮光膜
を形成した位相シフト用マスクと同様な効果を有するも
のである。
The phase shift mask manufactured by the method described above has the same effect as the conventional phase shift mask in which the shifter and the light shielding film are formed on the same substrate.

【0022】[0022]

【発明の効果】以上説明したように、本発明によれば、
シフターパタンと遮光膜パタンをそれぞれ別な基板に形
成し、それぞれの基板をシフターと遮光膜が接するよう
に貼り合わせて使用するようにしたので、以下の効果が
得られる。
As described above, according to the present invention,
The shifter pattern and the light-shielding film pattern are formed on different substrates, and the substrates are used so that the shifter and the light-shielding film are in contact with each other. Therefore, the following effects can be obtained.

【0023】1.遮光膜のオーバーエッチングが不要で
あり、よって、遮光膜の高精度な寸法制御が可能であ
る。
1. Over-etching of the light-shielding film is not necessary, so that the light-shielding film can be controlled with high accuracy.

【0024】2.前記1によって、この位相シフト用マ
スクを使用する場合、転写像における寸法のバラツキが
小さくなる。
2. Due to the above 1, when this phase shift mask is used, the dimensional variation in the transferred image is reduced.

【0025】3.別々な基板にシフターのみまたは遮光
膜のみの単層のパターンを形成するので、検査、修正が
容易である。
3. Since a single layer pattern of only the shifter or only the light shielding film is formed on separate substrates, inspection and correction are easy.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の実施例FIG. 1 Example of the present invention

【図2】従来例FIG. 2 Conventional example

【符号の説明】[Explanation of symbols]

1 ガラス基板 2 遮光膜 3 シフター 4 レジスト 1 glass substrate 2 light-shielding film 3 shifter 4 resist

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 ガラス基板上にシフターパターンのみを
形成した基板Aと、ガラス基板上に遮光膜パターンのみ
を形成した基板Bとを製造し、前記基板A及びBを前記
シフターパターン上面と遮光膜パターン上面とが接する
ように貼り合わせることを特徴とする位相シフト用マス
クの製造方法。
1. A substrate A having only a shifter pattern formed on a glass substrate and a substrate B having only a light-shielding film pattern formed on a glass substrate are manufactured, and the substrates A and B are formed on the shifter pattern upper surface and the light-shielding film. A method for manufacturing a phase shift mask, which is characterized in that the mask and the pattern are bonded so as to be in contact with the upper surface of the pattern.
JP17680692A 1992-07-03 1992-07-03 Production of mask for phase shift Pending JPH0619111A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17680692A JPH0619111A (en) 1992-07-03 1992-07-03 Production of mask for phase shift

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17680692A JPH0619111A (en) 1992-07-03 1992-07-03 Production of mask for phase shift

Publications (1)

Publication Number Publication Date
JPH0619111A true JPH0619111A (en) 1994-01-28

Family

ID=16020169

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17680692A Pending JPH0619111A (en) 1992-07-03 1992-07-03 Production of mask for phase shift

Country Status (1)

Country Link
JP (1) JPH0619111A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10052163C2 (en) * 1999-10-22 2003-11-06 Yazaki Corp Wiring structure for a vehicle
US6940786B2 (en) 2002-03-27 2005-09-06 Seiko Epson Corporation Electronic timepiece with stable IC mounting

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10052163C2 (en) * 1999-10-22 2003-11-06 Yazaki Corp Wiring structure for a vehicle
US6940786B2 (en) 2002-03-27 2005-09-06 Seiko Epson Corporation Electronic timepiece with stable IC mounting

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