JPH06181165A - Semiconductor fabricating system - Google Patents

Abstract

PURPOSE:To allow exposure with no chip rotation by determining shift of the moving direction of an XY stage in X or Y direction from X or Y direction of reticle. CONSTITUTION:Reticle set marks RAMR, RSMR and RAML, RSML are imaged, while overlapped, by means of an imaging unit CM through mark observing mirrors AMR, AML, respectively. An XYtheta stage XYS is moved such that the center of tubular face of off-axis scope OS comes at the centers of reticle marks RMR, RML printed onto a photochromic plate PHC. A control unit CU calculates vectors which indicate how much the reticle mark RML, RMR patterns transferred onto the photochromic plate PHC are shifted in XY directions from the center of the off-axis scope OS. Relative difference between the XYtheta stage XYS and the reticle RT is then determined based on the measurements.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus called a stepper for sequentially transferring a circuit pattern on a reticle onto a wafer by a step-and-repeat method.

[0002]

2. Description of the Related Art Conventionally, the orientation of the XY stage with respect to the direction of the apparatus of this type has usually been guaranteed by mechanical assembling precision.

Further, in the XYθ stage in which the axis azimuth itself rotates due to the drive in the θ direction, when the origin position in the θ direction is aligned with the orientation of the device, a comparative measurement such as a differential transformer or a photo switch is performed. It was measured by a detection system with low accuracy.

The relative difference between the orientation of the XY stage and the orientation of the reticle is not directly measured, but
The orientation of the XY stage with respect to the apparatus and the orientation of the reticle with respect to the apparatus were individually measured.

Conventionally, when the correction amount of the baseline variation is to be measured and corrected, for example, a baseline measurement correction sequence as shown in FIG. 2 is executed to obtain a measured value as the variation amount with respect to the state after the previous correction. The variation obtained at this time is X
Reflected when the YQ stage XYS was moved and measured again using the same reticle RT and sequence as before,
The measured value is 0. When a value other than 0 is obtained for this measurement value,
One of the causes may be that the baseline has fluctuated since the previous correction by this measurement value. However, this measurement value is different when the reticle used is changed. This amount of variation includes an error that occurs when the patterns on the reticle cannot be produced according to the design values when the reticle is produced, so it cannot be generally said that the baseline has changed by this measured value. Conventionally, since the measured value including the creation error of each reticle is used as the baseline variation amount, it is not possible to accurately grasp the actually varied baseline variation amount.

[0006]

However, in the case where the orientation of the XY stage with respect to the direction of the apparatus is assured by the mechanical assembling accuracy, the case where the orientation of the stage fluctuates due to long-term aging is dealt with. Was difficult.

Further, in the XYθ stage in which the axis azimuth itself is rotated by driving in the θ direction, measurement is performed by a detection system such as a differential transformer or a photoswitch in order to match the origin position in the θ direction with the orientation of the device. In that case, it is not possible to measure the θ-direction origin position with high accuracy, and it is difficult to deal with changes over time of the differential transformer and photoswitch.

Since the relative difference between the orientation of the XY stage and the orientation of the reticle is not directly measured, but the orientation of the XY stage with respect to the apparatus and the orientation of the reticle with respect to the apparatus are individually measured, high precision is achieved. It was impossible to find the relative difference between the orientation of the XY stage and the orientation of the reticle.

In view of the above problems of the prior art, an object of the present invention is to accurately obtain the deviation between the orientation of the XY stage and the orientation of the reticle in a semiconductor manufacturing apparatus so that exposure without chip rotation can be performed. To do.

Since each reticle has this reticle creation error, the reticle creation error that was conventionally included in the baseline fluctuation is taken out, and only the actually changed baseline fluctuation is accurately grasped. It is an object.

[0011]

In order to achieve this object, according to the present invention, the circuit pattern on the reticle is fixed to the XY stage in a semiconductor manufacturing apparatus for sequentially exposing and transferring the circuit pattern onto the wafer on the XY stage by the step-and-repeat method. The photoconductor and the transfer marks provided at two or more positions on the reticle are respectively provided in a predetermined area on the photoconductor by XY
A means for exposing and transferring while moving the stage in a predetermined direction, a means for measuring the position of each transfer image transferred by this while keeping the XY stage stationary at one position, and a predetermined measuring position and the XY stage. And a means for determining a deviation amount between the movement direction of the XY stage in the X or Y direction and the reticle in the X or Y direction based on each position of the XY stage when the reticle is moved in the direction.

Alternatively, in a semiconductor manufacturing apparatus in which a circuit pattern on a reticle is sequentially exposed and transferred onto a wafer on an XY stage by a step-and-repeat method, a photoconductor fixed to the XY stage and two or more positions on the reticle are provided. Means for exposing and transferring the transfer mark onto the photoconductor while the XY stage is kept stationary at one place, and the position of each transfer image transferred by this means are measured while moving the XY stage in a predetermined direction. Means and the measured position and each position of the XY stage when the XY stage is moved in a predetermined direction, the deviation amount between the movement direction of the XY stage in the X or Y direction and the X or Y direction of the reticle. And means for seeking.

Further, a means for performing chip rotation correction based on the obtained deviation amount, a difference between the deviation amount obtained by using a reference reticle and the deviation amount obtained by another reticle is used as the deviation amount due to the reticle difference. And a means for storing the erroneous measurement amount in association with the different reticle, a means for correcting the deviation amount obtained by the different reticle based on the erroneous measurement amount, and the like. Is preferred.

[0014]

In this structure, the transfer marks provided at two or more positions on the reticle are X-marked on the photoconductor, respectively.
Exposure transfer is performed while moving the Y stage in a predetermined direction, and the position of each transfer image is measured with the XY stage stationary at one position, or conversely, during exposure transfer, the XY stage is stopped and the position of each transfer image is measured. The measurement is performed while moving the XY stage in a predetermined direction at the time of measurement. However, due to the movement in the predetermined direction, for example, the X direction in the XY stage, the X direction of the XY stage and the direction of the reticle are located at the measurement position of each transfer image. The information on the angular deviation from and is included. Therefore, based on this measurement position and each position of the XY stage when the XY stage is moved in a predetermined direction, the amount of deviation between the movement direction of the XY stage in the X or Y direction and the X or Y direction of the reticle is accurate. Required to.

Further, one reticle serving as a reference is determined, the amount of deviation as the reticle creation error is accurately measured, and the baseline is corrected based on this to eliminate the amount of deviation of the baseline. After the line does not change stably, another reticle measures the deviation amount again to obtain the deviation amount as a creation error with respect to the reference reticle for each reticle. By storing this and reflecting it at the time of exposure, exposure without chip rotation is performed.

Further, the operation of the present invention will be described in detail through the following examples.

[0017]

Embodiment 1 FIG. 1 is a perspective view showing the structure of a step-and-repeat type exposure apparatus for manufacturing semiconductors, a so-called stepper, according to a first embodiment of the present invention. In FIG. 1, RT is a reticle on which a pattern PT for manufacturing a semiconductor element is formed, LN is a projection lens for reducing and projecting the pattern PT on the reticle RT onto a wafer stage on an XYθ stage, and C
U is a control unit for controlling the entire stepper, and CS is a console for inputting necessary information such as alignment data and exposure data to the control unit CU or storing it in a storage device such as a built-in hard disk. .

The control unit CU includes a plurality of computers,
It has a memory, an image processing device, an XYθ stage control device, and the like.

The reticle RT is adsorbed and held on the reticle stage RS which moves in the X, Y and θ directions in accordance with a command from the control unit CU. The reticle RT also includes reticle alignment marks RAMR and RAML used for aligning the reticle RT with respect to the projection lens LN in a predetermined positional relationship, and reticle marks RMR and RML for transferring to the photochromic plate PHC.
have. In this embodiment, the reticle mark RMR,
It is assumed that the RMLs are arranged at the same Y coordinate on the reticle.

Reticle set marks RSMR and RSML are formed on the member fixed to the lens barrel of the projection lens LN so as to have a predetermined positional relationship with the projection lens LN. The alignment of the reticle RT with respect to the projection lens LN is performed by setting the mark RAMR and RSMR pair and the mark RAML and mark RSML pair as the mark observation mirror A.
The image pickup device CM images the images via the MR and the AML in an overlapping manner, and the control unit CU moves the reticle stage RS so that the positional deviation amount between the two images detected at this time is within a predetermined allowable value. It is done by The mark observation mirrors AMR and AML can be moved in the XY directions by the control unit CU.

MX and MY are XYθ stage XYS XY
A motor that moves in the direction, Mθ (not shown) is a motor that rotates the XYθ stage XYS in the θ direction, and MRX and MRY are X.
Mirror fixed to Yθ stage XYS, IFX,
IFY and IFθ are laser interferometers. The position on the XYθ coordinate of the XYθ stage XYS is constantly monitored by the laser interferometers IFX, IFY, IFθ and the mirrors MRX, MRY, and the XYθ stage XYS moves to the position instructed by the control unit CU by the motors MX, MY, Mθ. The control unit CU keeps the laser interferometers IFX, IFY,
The XYθ stage XYS is held at the designated position based on the output of IFθ.

The wafer stage WS is an XYθ stage XY.
This is a wafer holding stage that moves in the Z direction with respect to S. The wafer can be adsorbed and held on the wafer stage WS.

The photochromic plate PHC is XYθ
A flat plate coated with a photosensitizer (for example, a spiropyran-based or spironaphthoxazine-based photochromic material) fixed on the stage XYS or the wafer stage WS, and attached near the height of the image plane of the projection lens LN. Has been. The transmittance of the photosensitizer temporarily changes with respect to the light of the wavelength from the exposure light source IL, and returns to the original transmittance with time. Therefore, the mark on the reticle RT can be transferred, and after a certain time, the transferred pattern disappears and the mark can be transferred again.

The exposure light source IL is a light source for projecting and exposing the pattern PT on the reticle RT onto the object on the wafer stage WS via the projection lens LN. Further, by opening the mark exposure shutters SHR and SHL, the reticle mark RMR, on the photochromic plate PHC via the mark observation mirrors AMR and AML and the projection lens LN.
It is also used as a light source when projecting and exposing RML.

The off-axis scope OS is a mark observing microscope having a focal plane at a Z position which is almost equal to that of the projection lens LN. With this microscope, an image of the mark transferred onto the wafer on the wafer stage WS or the photochromic plate PHC is picked up, and the mark picked up from the image output at this time is X from the center of the off-axis scope OS.
The control unit CU can calculate how much it is offset in the Y direction.

FIG. 2 is a flow chart showing a sequence of a measuring method using a photochromic material in this apparatus, and FIG. 3 is a diagram showing how the photochromic plate PHC moves in the sequence. In this method, the XYθ stage XYS is moved to a plurality of positions to transfer the reticle marks RML and RMR onto the photochromic plate PHC, and the position of the transferred mark is measured while the XYθ stage XYS is stationary at one position. Is. Next, referring to FIGS. 2 and 3, the reticle RT
A sequence for obtaining the relative difference Δθ between the orientation of the XYθ stage and the orientation of the XYθ stage XYS will be described.

When the sequence is started, first, step S
At 01, the reticle RT is loaded onto the reticle stage RS and suction-held.

Next, in step S02, the reticle RT is aligned with the projection lens LN using the reticle set marks RSMR and RSML and the reticle alignment marks RAMR and RAML. That is, the set of the mark RAMR and the mark RSMR and the set of the mark RAML and the mark RSML are superimposed and picked up by the image pickup device CM via the mark observation mirrors AMR and AML, respectively, and the positions of the two detected from the image output at this time are detected. The reticle stage R is adjusted so that the displacement amount is within a predetermined allowable value.
The control unit CU moves S to align the two. As shown in FIG. 3, the reticle RT on the apparatus at the time when this reticle alignment is completed.
Direction 31x, 31y and XYθ stage XYS direction 3
It is assumed that there is an angle difference Δθ between 2x and 32y. In FIG. 3, 21 is a projected image position of the reticle RT, and 22 and 23 are projected image positions of the reticle marks RMR and RML.

Next, in step S03, the reticle marks RMR and RML are printed side by side in the printing area on the photochromic plate PHC with a small distance from each other. Match. this is,
The XYθ stage XYS is moved to a predetermined position so that the point to be focused is on the optical axis of the projection lens LN.

Next, in step S04, in order to transfer the reticle mark RMR (on the left side when viewed from the front of the apparatus) to the photochromic plate PHC, on the right side of the printing area on the photochromic plate PHC (when viewed from the front of the apparatus), the projection lens The XYθ stage XYS is moved so that the reticle mark RMR projected via the LN comes, and the photochromic plate PHC is positioned at the position 33. At this time, set the XYθ stage XYS position to XYθ.
The coordinates on the stage XYS are (erx, ery).

Next, in step S05, the mark exposure shutter SHR is opened, and the exposure light source IL emits exposure light to project and expose the reticle mark RMR on the photochromic plate PHC. Immediately after the exposure, the mark exposure shutter SHR is closed.

Next, in step S06, in order to transfer the reticle mark RML (right side as seen from the front of the apparatus) to the photochromic plate PHC, the projection lens is placed on the left side (as seen from the front of the apparatus) of the printing area on the photochromic plate PHC. The XYθ stage XYS is moved so that the reticle mark RML projected via the LN comes, and the photochromic plate PHC is positioned at the position 34. The position of the XYθ stage XYS at this time is XY
The coordinates of the θ stage XYS are (elx, ely).

Next, in step S07, the mark exposure shutter SHL is opened, and the exposure light source IL emits exposure light to project and expose the reticle mark RML on the photochromic plate PHC. Immediately after the exposure, the mark exposure shutter SHL is closed.

Next, in step S08, the reticle mark R printed on the photochromic plate PHC is printed.
XYθ stage X so that the center 35 of the tube surface of the off-axis scope OS is located near the midpoint of the center of MR and RML.
The YS is moved to position the photochromic plate PHC at the position 38, and the focus is adjusted. At this time, on the photochromic plate PHC, the reticle mark RML,
The transfer patterns 36 and 37 of the RMR are visible.

Next, in step S09, the transfer patterns 36 and 37 are imaged by the off-axis scope OS, and the transfer pattern 3 imaged from the image output at this time.
6 and 37 are the center 3 of off-axis scope OS
Vectors pl = (plx, ply) and pr = (prx, pr) showing how much the displacement is from 5 in the XY directions.
y) is calculated by the control unit CU.

Next, in step S10, the XYθ stage XY is calculated from the measured values obtained by the above sequence.
The relative difference Δθ between the orientations of S and the reticle RT is calculated by the equation 1 and stored in the storage device in the console CS to end the sequence.

[0037]

[Equation 1]

Embodiment 2 FIG. 4 is a flow chart of a measurement sequence according to the second embodiment of the present invention, and FIG. 5 is a diagram showing how the photochromic plate PHC moves in that sequence. This method is a method in which the XYθ stage is stationary at one position, the reticle marks RML and RMR are transferred onto the photochromic plate PHC, and the positions of the transferred marks are measured while the XYθ stage XYS is moved to a plurality of positions. is there. A sequence for obtaining the relative difference Δθ between the orientation of the reticle RT and the orientation of the XYθ stage XYS will be described with reference to FIGS. 4 and 5.

When the sequence is started, first, in steps S11 and S12, steps S01 and S0 of FIG.
In the same manner as in 2, the reticle RT is loaded and aligned.

Next, in step S13, the reticle marks RMR, R are formed on the photochromic plate PHC.
In order to print the ML, the XYθ stage XYS is moved to move the photochromic plate PHC to the projection lens LN.
It is located at the center position 51 of and is focused.

Next, in step S14, the mark exposure shutters SHR and SHL are opened, and exposure light is emitted from the exposure light source IL to project and expose the reticle marks RMR and RML on the photochromic plate PHC. Immediately after the exposure, the mark exposure shutters SHR and RML are closed.

Next, in step S15, the transfer pattern 37 of the reticle mark RMR transferred onto the photochromic plate PHC is transferred to the off-axis scope OS.
The XYθ stage XYS is moved so as to come close to the center 35 to position the photochromic plate PHC at the position 52, and the focus is adjusted. At this time, the transfer pattern 37 of the reticle mark RMR is visible on the photochromic plate PHC. The position of the stage at this time is XYθ
The coordinates on the stage are (erx, ery).

Next, in step S16, the image 37 is picked up by the off-axis scope OS, and from the image output at this time, a vector indicating the amount of deviation of the picked-up transfer mark 37 from the center 35 of the off-axis scope OS in the XY directions. The control unit CU calculates pr = (prx, pry).

Next, in step S17, the XYθ stage XYS is moved so that the transfer pattern of the reticle mark RML transferred onto the photochromic plate PHC is near the center of the off-axis scope OS, and the photochromic plate PHC is positioned at the position 53. Let's focus. At this time, the photochromic plate P
The transfer pattern 36 of the reticle mark RML is visible on the HC. The position of the stage at this time is (elx, ely) in the coordinates on the XYθ stage.

Next, in step S18, the image 36 is picked up by the off-axis scope OS, and from the image output at this time, a vector p indicating the amount of deviation of the picked-up mark 36 from the center of the off-axis scope OS in the X and Y directions.
The control unit CU calculates l = (plx, ply).

Next, in step S19, the XYθ stage XY is read from the measured values obtained by the above sequence.
The relative difference Δθ between the orientations of S and the reticle RT is calculated by the formula 2 and stored in the storage device in the console CS, and the sequence ends.

[0047]

[Equation 2]

Next, a method of correcting the chip rotation during wafer exposure using the angular difference Δθ between the XYθ stage XYS and the orientation of the reticle RT obtained by the above method will be described.

As shown in FIG. 3, the wafer is held and adsorbed on the wafer stage WS with a difference of Δθ between the XYθ stage XYS and the reticle RT, and the pattern PT on the reticle is printed by the step-and-repeat method. As it goes, as shown in FIG. 6A, it is baked with a chip rotation of −Δθ.

Therefore, in order to perform exposure without chip rotation, the XYθ stage XYS is moved by −Δ in the θ direction.
When the pattern PT on the reticle is printed by step and repeat on the wafer by rotating it by θ, a wafer without chip rotation is formed as shown in FIG. 6B.

As the second method, the reticle RT is set to Δ
Even if the pattern PT on the reticle is printed by the step-and-repeat method on the wafer by rotating it by θ, a wafer without chip rotation can be formed as shown in FIG. 6C.

As a third method, the XYθ stage X
When YS is moved by the step-and-repeat method, i
The design shot exposure position of the second shot is (si
x, siy), we get (si
Also by moving to the position of x ', siy') and exposing, a wafer without chip rotation can be formed as shown in FIG. 6B.

[0053]

[Equation 3]

In the above embodiment, there are only two reticle marks on the reticle RT, RML and RMR, and their positions are arranged at the same Y coordinate on the reticle. More, Y
It is also possible to obtain a relative difference between the Y direction of the XYθ stage XYS and the Y direction of the reticle RT by using marks that are also separated in the direction.

By the way, such a baseline measurement correction sequence is executed to obtain a measurement value as a variation amount with respect to the state after the previous correction, and the variation amount obtained at this time is reflected when the XYQ stage XYS is moved, and again. When measurement is performed using the reticle RT and the sequence similar to the previous time, 0 is obtained as the measurement value. If a value other than 0 is obtained for this measurement value, one of the causes may be that the baseline has fluctuated since the previous correction by this measurement value. However, this measurement value is different when the reticle used is changed. This amount of variation includes an error that occurs when the patterns on the reticle cannot be produced according to the design values at the time of producing the reticle, so it cannot be generally said that the baseline has changed by this measured value. If the measured value including the creation error of each reticle is used as the baseline fluctuation amount, the actually fluctuated baseline fluctuation amount cannot be grasped accurately.

Therefore, the reticle creation error, which is included in the baseline variation due to each reticle having such a reticle creation error, is taken out, and only the actually changed baseline fluctuation is accurately grasped. Is preferred.

Embodiment 3 FIG. 7 is a flowchart of a baseline measurement correction sequence using a photochromic material according to the third embodiment of the present invention. However, here, it is assumed that the X direction and the Y direction of the reference reticle RT and the XYθ stage XYS match each other by the above-described sequence correction processing.

When the sequence is started, first, step S
At 71, the reticle RT from which the production error should be taken out
Are loaded onto the reticle stage RS and held by suction.

Next, in step S72, the reticle RT is aligned with the projection lens LN using the reticle set marks RSMR and RSML and the reticle alignment marks RAMR and RAML. That is, the set of the mark RAMR and the mark RSMR and the set of the mark RAML and the mark RSML are superimposed and picked up by the image pickup device CM via the mark observation mirrors AMR and AML, respectively, and the positions of the two detected from the image output at this time are detected. The reticle stage R is adjusted so that the displacement amount is within a predetermined allowable value.
The control unit CU moves S to align the two. Next, in step S73, the reticle R
In order to expose only the reticle marks RML and RMR on T, another optical path is used instead of the optical path that passes through the exposure shutter SHT at the time of normal exposure, so that the mark exposure shutters SHR and SHL and the mark observation are performed from the exposure light source IL. Mirror A
Exposure light is taken out and an optical path for exposure is secured so that the reticle marks RMR, RML can be exposed through the MR, AML and the projection lens LN. At this time, the mark observation mirrors AMR and AML allow the exposure light to reach the reticle mark R.
Move to a predetermined position so that only MR and RML are exposed.

Next, in step S74, in order to print the reticle marks RMR and RML side by side with a small distance from each other in the printing area on the photochromic plate PHC, two points at which the reticle marks RMR and RML are to be printed are to be printed. Focus in the center. At this time, the point where the focus is focused is the projection lens LN.
The XYθ stage XYS is moved to a predetermined position so as to come on the optical axis of

Next, in step S75, in order to transfer the reticle mark RMR (left side as viewed from the front of the apparatus) to the photochromic plate PHC, a projection lens is provided on the right side (as viewed from the front of the apparatus) of the printing area on the photochromic plate PHC. The XYθ stage XYS is moved to a predetermined position so that the reticle mark RMR projected via the LN comes. At this time, the XYθ stage XYS is moved and the photochromic plate PHC is positioned at the position 81 shown in FIG.

Next, in step S76, the mark exposure shutter SHR is opened and the exposure light source IL emits exposure light to project and expose the reticle mark RMR onto the photochromic plate PHC. Immediately after the exposure, the mark exposure shutter SHR is closed.

Next, in step S07, in order to transfer the reticle mark RML (right side as viewed from the front of the apparatus) to the photochromic plate PHC, a projection lens is provided on the left side (as viewed from the front of the apparatus) of the printing area on the photochromic plate PHC. The XYθ stage XYS is moved to a predetermined position so that the reticle mark RML projected via the LN comes. At this time, the XYθ stage XYS is moved to position the photochromic plate PHC at the position 82 while keeping the focal length adjusted previously unchanged.

Next, in step S78, the mark exposure shutter SHL is opened, and the exposure light source IL emits exposure light to project and expose the reticle mark RML on the photochromic plate PHC. Immediately after the exposure, the mark exposure shutter SHL is closed.

Next, in step S79, the XYQ stage is moved so that the center of the tube surface of the off-axis scope OS is located near the center of the centers of the transfer patterns 83, 84 of the reticle marks RMR, RML printed on the photochromic plate PHC. Move the XTS to position the photochromic plate PHC at the position 85, and transfer pattern 8
Focus at the midpoint of the center of 3,84.

Next, in step S80, images 83 and 84 of the reticle marks RMR and RML transferred onto the photochromic plate PHC are picked up by an off-axis scope OS which is a microscope for observing marks, and the image output at this time is output. From the imaged marks 83, 8
The control unit CU calculates a vector pl = (plx, ply) indicating the amount of deviation in the XY directions from the center 86 of the off-axis scope OS of No. 4.

Next, at step S81, the reticle creation error D used this time is obtained from the measured values obtained by the above sequence from the equation (4) and stored in the storage device in the console CS.

[0068]

[Equation 4]

[0069]

As described above, according to the present invention,
The deviation amount between the orientation of the XY stage and the orientation of the reticle can be obtained with high accuracy on the apparatus and by following changes with time. Therefore, based on the deviation amount, it becomes possible to perform the baking on the wafer without the chip rotation without the need for the vernier measurement by the preceding wafer. Further, the error in producing each reticle can be obtained on the apparatus, and the baseline variation amount can be obtained more accurately.

[Brief description of drawings]

FIG. 1 is a perspective view showing a configuration of a step-and-repeat type exposure apparatus for manufacturing a semiconductor, which is a so-called stepper, according to a first embodiment of the present invention.

2 is a flowchart showing a sequence of a measuring method using a photochromic material in the apparatus of FIG.

FIG. 3 is an explanatory diagram showing how the photochromic plate PHC moves in the sequence of FIG.

FIG. 4 is a flowchart of a measurement sequence according to a second embodiment of the present invention.

FIG. 5 is an explanatory diagram showing how the photochromic plate PHC moves in the sequence of FIG.

FIG. 6 is an explanatory diagram of a chip rotation correction based on a relative difference between the orientations of the XY stage and the reticle in the apparatus of FIG.

FIG. 7 is a flowchart of a baseline measurement correction sequence using a photochromic material according to a third embodiment of the present invention.

FIG. 8 is an explanatory diagram showing how the photochromic plate PHC moves in the sequence of FIG. 7.

[Explanation of symbols]

IL: exposure light source, SHT: exposure shutter, SHL, SH
R: mark exposure shutter, AML, AMR: mark observation mirror, RS: reticle stage, RT: reticle, P
T: pattern, RML, RMR: reticle mark, RA
ML, RAMR: Reticle alignment mark, LN:
Projection lens, RSML, RSMR: Reticle set mark, OS: Off-axis scope, XYS: XYθ stage, WS: Wafer stage, MRX, MRY: Interferometer mirror, IFX, IFY, IFθ: Interferometer, MX, M
Y: XYθ stage drive motor, PHC: photochromic plate, CU: control unit, CS: console, DAP: roof prism, CM: imaging device, 21: projected image position of reticle RT, 22, 23: projection of reticle marks RMR, RML Image position, 31x, 31y: orientation of reticle RT, 32x, 32y: XYθ stage XYS
Direction, 33, 34, 38, 51, 52, 53, 81,
82,85: photochromic plate position, 35,8
6: Center of off-axis scope tube surface, 36, 37, 8
3, 84: Transfer pattern.

Continuation of front page (51) Int.Cl. ⁵ Identification number Office reference number FI technical display location 7352-4M H01L 21/30 301 P 7352-4M 361 G

Claims (6)

[Claims] 1. A semiconductor manufacturing apparatus for sequentially exposing and transferring a circuit pattern on a reticle onto a wafer on an XY stage by a step-and-repeat method, wherein a photosensitive member fixed to the XY stage and two or more positions provided on the reticle. The transfer marks are respectively placed in a predetermined area on the photoconductor, and X
A means for exposing and transferring while moving the Y stage in a predetermined direction, a means for measuring the position of each transfer image transferred by the Y stage while keeping the XY stage stationary at one position, and the measuring position and the XY stage. Based on each position of the XY stage when moved in a predetermined direction, the X of the XY stage
Alternatively, the semiconductor manufacturing apparatus is provided with means for obtaining a shift amount between the moving direction in the Y direction and the X or Y direction of the reticle. 2. In a semiconductor manufacturing apparatus for sequentially exposing and transferring a circuit pattern on a reticle onto a wafer on an XY stage by a step-and-repeat method, a photosensitive member fixed to the XY stage and two or more positions provided on the reticle. Means for exposing and transferring the transfer mark onto the photoconductor while the XY stage is kept stationary at one place, and the position of each transfer image transferred by this means are measured while moving the XY stage in a predetermined direction. Means and the measured position and each position of the XY stage when the XY stage is moved in a predetermined direction, the deviation amount between the movement direction of the XY stage in the X or Y direction and the X or Y direction of the reticle. A semiconductor manufacturing apparatus, comprising: a means for obtaining. 3. The semiconductor manufacturing apparatus according to claim 1, further comprising means for performing chip rotation correction based on the calculated shift amount. 4. A means for determining a difference between the deviation amount obtained by using a reference reticle and the deviation amount obtained by another reticle as an erroneous measurement amount of the deviation amount due to a reticle difference. The semiconductor manufacturing apparatus according to claim 1. 5. The semiconductor manufacturing apparatus according to claim 4, further comprising means for storing and holding the erroneously measured amount in association with the other reticle. 6. A semiconductor manufacturing apparatus comprising: means for correcting a deviation amount obtained by the another reticle based on the erroneous measurement amount.