JPH06169465A - Linear color charge-coupled device image sensor and its execution method - Google Patents

Abstract

PURPOSE: To shorten the processing time to improve a system function and to reduce the volume and the cost by arranging three induced picture elements close and reducing the distances between them to eliminate the differences in transmission times of induced signals for optical scanning. CONSTITUTION: Three induced picture elements SA0, SB0, and SC0 are arranged close, and a signal which the picture element sensed is transmitted to a CCD transmission gate CH1 by a transfer gate TA and is outputted from an output port O1 . A signal which the picture element SC0 sensed is transmitted from a transfer gate TC to a gate CH3 through vertical transmission gates CVA, CH2, and CVB and is outputted from an output port O3 . A signal which the picture element SB0 sensed is transmitted to the gate CH2 through transfer gates TB, SC0, TC, and CVA after signal transmission of SC0 and is outputted from an output port O2 . Thus, the processing time is shortened to improve the function, and the volume and the cost are reduced.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a charge coupled device image sensor (charge coupled device image sensor, hereinafter abbreviated as CCDIS) and a method for implementing the same, and more particularly to a linear color charge coupled device image sensor and a method for implementing the same.

[0002]

2. Description of the Related Art As shown in FIG. 3, in a conventional CCDIS structure, three induction pixels SA, SB, SC (usually red,
3 pixels of indigo and green), each of the induction pixels is charged when exposed to a sudden light, and each transfer gate T
1, via the T2, T3, is being outputted and transmitted further their CCD transfer gates C _11, to _{C 12, C 21, C 22} , C 31, C 32. However, the inductive pixels of this type of CCDIS are relatively far apart from each other, and there is a time lag in the data transmission of each inductive pixel during optical scanning, and one complete data is equivalent to three inductive pixels. Since it is the sum of data, in use, it is necessary to occupy a part of the hard memory to store the data of each induction pixel, and after that, select the corresponding data and recreate it as one complete data.
Not only is the memory capacity wasted, but the processing time of the software is considerably lengthened and the volume of the apparatus used is considerably increased.

In order to solve the above problems, another type of C
CDIS will be proposed, but as shown in FIG. 4, the CCDIS has three guiding pixels SA1, SB1, SC1.
Among the two induction pixels SA1 and SB1, the two induction pixels SA1 and SB1 are arranged close to each other, but the other induction pixel SC1 still separates the two induction pixels SA1 and SB1 from one transmission gate C2. Not so effective. Furthermore, another kind of CCDIS, such as that shown in FIG. 5, appears, but this kind of CCDIS has a planar structure, and S ₁₁ , S ₁₂ , S ₂₁ , and S _{22 in} the figure are induction pixels. When each pixel receives a burst of light, it is charged, and after a certain period of integration, the charges are transferred from the transfer gates T ₁₁ and T ₁₂ to the vertical CCD transmission gates CV ₁ and CV ₂ , and then vertically to the horizontal CCD.
After transmitting to the transmission gate, the signal is output to the output port to output a voltage signal.Although the distance between pixels in this type of structure is reduced to the size of one pixel, the unit induction Transfer gate T ₁₁ and vertical CC in pixel
Due to the inclusion of the D transmission gate CV ₁ , the effective area of induction remains only half, so the induction rate of the CCD is greatly reduced.

[0004]

SUMMARY OF THE INVENTION In view of the above-mentioned problems in the conventional charge-coupled device image sensor and the method of executing the same, the present invention improves the function of the system by reducing the software processing time, which has a high light induction rate. In addition, it is an object of the present invention to provide a linear color charge coupled device image sensor and a method of implementing the same, which can reduce the installation cost of hardware and the volume of a system used.

[0005]

In order to achieve the above object, the present invention provides a first guide pixel SA0 and a first guide pixel SA0 which are arranged in close proximity to one side of the first guide pixel SA0 with an appropriate insulation distance. Second guiding pixel SB0; and the second guiding pixel S
B0 Third induction pixel SC0 arranged in the vicinity of the other side
A first transfer gate TA provided near the other side of the first guide pixel SA0, and a second guide pixel SB0
And a third transfer gate TB interposed between the third transfer pixel SC0 and the third transfer pixel SC0; a third transfer gate TC provided close to the other side of the third transfer pixel SC0; and the first transfer gate TC. A first CCD transmission gate CH1 provided outside the transfer gate TA; a second CCD transmission gate CH2 provided outside the third transfer gate TC; a third CCD provided outside the second CCD transmission gate CH2 CCD transfer gate CH3; the third transfer gate TC and the second C
The first vertical C provided between the CD transmission gate CH2
A CD transfer gate CVA; a second vertical CCD transfer gate CVB provided between the second CCD transfer gate CH2 and the third CCD transfer gate CH3; and the first lead. A signal induced by the pixel SA0 in response to the sudden emission of light is transmitted from the first transfer gate TA to the first CCD transmission gate CH1 and further horizontally in sequence to the first output port O _1. And output the signal induced by the third inductive pixel SC0.
Transfer gate TC to first vertical CCD transmission gate CV
A, second CCD transmission gate CH2, second vertical CCD
The third CCD transmission gate CH3 via the transmission gate CVB
To the third output port O ₃ and then to the third output port O ₃ in order to output the signal induced by the second induction pixel SB0, and the signal induced by the third induction pixel SC0. After that, the data is transmitted from the second transfer gate TB to the second CCD transfer gate CH2 via the third inductive pixel SC0, the third transfer gate TC, the first vertical CCD transfer gate CVA, and further. The data are sequentially transmitted in the horizontal direction to the second output port O ₂ and output.

When the second induction pixel SB0 has holes, the electron potential of the second induction pixel SB0 is higher than the electron potential of the third induction pixel SC0, and the second and third induction pixels SB0 and SC0. It is more preferable that the P type is formed and the impurity concentration of the P type layer on the upper surface of the second inductor SB0 is higher than the impurity concentration of the P type layer on the upper surface of the third induction pixel SC0 in the manufacturing process. Become.

[0007]

According to the present invention having the above-described structure, the CCD transmission gates CH1, CH2 and CH3 are no longer inserted and arranged in the space of the three induction pixels SA0, SB0 and SC0, respectively. Pixels SA0, SB0,
SC0s are arranged closely to each other to ensure a perfect induction area. Among them, the signal induced by the first induction pixel SA0 is charged by the first transfer gate TA to the first CCD transmission gate CH1. To the first output port O ₁ and further in the horizontal direction to output from the first output port O ₁ .
The signal induced by the third induction pixel SC0 is transmitted from the third transfer gate TC to the third vertical CCD transmission gate CVA, the second vertical CCD transmission gate CH2, and the second vertical CCD transmission gate CVB. is transmitted to the CCD transfer gates CH3, turn horizontally is output from the third output port O ₃ by transmission: Moreover, the signal, the third induction pixels SC0 is induced its induction pixel SB0 the second-induced After being completely transmitted, the signal is transmitted to the second CCD transmission gate CH2 via the second transfer gate TB, the third inductive pixel SC0, the third transfer gate TC, the first vertical transmission gate CVA, and further. The signal is transmitted in the horizontal direction and output from the second output port O ₂ .

Then, when the second induction pixel SB0 has a hole, the electron potential of the second induction pixel SB0 is made higher than the electron potential of the third induction pixel SC0, and the second and third pixels are provided.
Of the induction pixels SB0 and SC0 of PNP type, and in the manufacturing process, the impurity concentration of the P-type layer on the upper surface of the second induction pixel SB0 is changed to the impurity concentration of the P-type layer on the upper surface of the third induction pixel SC0. Since it is higher, the third induction pixel S
When the transmission of the signal induced by C0 is completed, the signal induced by the second induction pixel SB0 can be transferred and transmitted by the third induction pixel SC0.

The above and other objects, features and advantages of the present invention will become more apparent from the following detailed description of embodiments with reference to the drawings.

[0010]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS As shown in FIG. 1, a charge coupled device image sensor of the present invention comprises a first induction pixel SA0, a second induction pixel SB0, a third induction pixel SC0 and a first transfer gate T.
A, second transfer gate TB, third transfer gate TC, first CCD transmission gate CH1, second CCD transmission gate CH2, third CCD transmission gate CH3, first vertical C
CD transmission gate CVA, second vertical CCD transmission gate C
VB; of which the first guiding pixel S
A0 is arranged in the vicinity of the second induction pixel SB0 and
The guiding pixel SB0 of the first guiding pixel SA0 is only provided with a very thin second transfer gate TB between itself and the third guiding pixel SC0. TA and a first transfer gate TA in close proximity to the first transfer gate TA
CCD transmission gates CH1 are provided respectively, and the first CCD transmission gates CH1 are equipped with a _first output port O ₁ . On the other hand, the third induction pixel SC0 is adjacent to the other side, and the third transfer gate TC is adjacent to the third transfer gate TC, and the first vertical CCD transmission gate C is adjacent to the third transfer gate TC.
VA and a second CCD transmission gate CH2 in the vicinity of the first vertical CCD transmission gate CVA, and further in the order of the second CCD transmission gate CH2.
To the second vertical CCD transmission gate CVB, and the third vertical CCD transmission gate CVB to the second vertical CCD transmission gate CVB.
The CCD transmission gate CH3 of the
Providing an output port O ₂ of the CCD transfer gates CH2, an output port O ₃ of the CCD transfer gates CH3 of the third, respectively.

As can be seen from the above structure, each C
The CD transmission gates CH1, CH2, and CH3 are no longer arranged in the space of the three guide pixels SA0, SB0, and SC0, but the three guide pixels SA0, SB0, and
SC0s are arranged closely to each other and ensure a perfect induction area. Among them, the signal sensed by the first induction pixel SA0 causes the first transfer gate TA to charge the first CCD transmission gate CH1. To the first output port O ₁ and then to the first output port O ₁ ; on the other hand, the signal sensed by the third inductive pixel SC0 is transmitted from the third transfer gate TC to the first vertical CCD. Transmission gate CV
A, second CCD transmission gate CH2, second vertical CCD
The third CCD transmission gate CH3 via the transmission gate CVB
It is transmitted to turn horizontally to the output from the third output port O ₃ by transmission: The signal induced pixels SB0 the second is sensitive, the third induction pixels SC0 is sends the sensing signal After waiting for the second transfer gate T
B, the third inductive pixel SC0, the third transfer gate TC, the first vertical transmission gate CVA, the second CCD transmission gate CH2, and the second horizontal transmission to the second output port O _2. Output more.

Thus, the most important factor in implementing the structure of the present invention is how to transfer the induced charge of the second induction pixel SB0 to the third induction pixel SC0. The output processing of other signals is simply software installed in the system used and does not belong to the feature of the present invention, so the description thereof will be omitted. Next, the execution method which is the feature of the present invention will be described.

FIG. 2 is a cross-sectional view of each of the inductive pixels according to the present invention. As shown in FIG. 2A, the three inductive pixels SA0, SB0 and SC0 are all of the PNP type. PA and P in the surface P-type of each sensitive pixel constructed
B, PC and PA ', PB', PC 'in the bottom P-type are both at ground potential, and N _A in the N-type in the intermediate layer,
N _B and N _C are joined in a floating state to store the induced charge,
Then, when the charge is transmitted, the N-type layer becomes a hole and has a positive potential.

A feature of the present invention is that the P-type layer PB on the upper surface of the second induction pixel SB0 located at the center has a relatively high P.
Type impurity concentration (usually secondary implantation is possible),
Then, the P-type impurity concentration of the P-type layer PC on the upper surface of the third induction pixel SC0 is lowered (normally, only the primary implantation is allowed), and at the time of holes, the electron potential in the second induction pixel SB0. Is made relatively high with respect to the third induction pixel SC0, and the second induction pixel SB0 and the third induction pixel SC0 are both exposed to light to generate an induction charge ((b in the figure). ) And transmitting the charge, the third transfer gate TC first opens and the third inductive pixel S
The induced charge of C0 is vertically transmitted as in the above operation method (as shown in (C) in the figure), and as shown in (d) in the figure, the charge of the third induced pixel SC0 is changed. In the process of transmitting, the third transfer gate TC is closed again, and finally, when the charge of the third inductive pixel SC0 is completely transferred, the second transfer gate TB and the third transfer gate TC are transferred. TC is opened at the same time, and as shown in (e) in the figure, the charge of the second induction pixel SB0 is the third induction pixel SC0 whose electron potential is first low.
Then, the data can be transmitted by following the same steps as in the above transmission method.

[0015]

According to the present invention configured as described above, the CCD transmission gates CH1, CH2 and C do not have 3 arranged in the space of the three induction pixels SA0, SB0 and SC0, respectively. One guiding pixel SA0, SB0,
Since the SC0s are arranged closely to each other and secure a perfect guide area, the distance between the guide pixels is short and there is no time lag in the guide signal transmission of each guide pixel during optical scanning. It is possible to reduce the processing time of software and improve the function of the system, and also to reduce the hardware installation cost and the volume of the system used because there is no need to add hardware.

[Brief description of drawings]

FIG. 1 is a structural diagram of the present invention.

FIG. 2 is a cross-sectional view showing an induced charge transfer mode according to the present invention.

FIG. 3 is a conventional CCDIS structure diagram.

FIG. 4 is another conventional CCDIS structure diagram.

FIG. 5 is a structure diagram of a conventional surface-type CCDIS.

[Explanation of symbols]

SA0 First guide pixel SB0 Second guide pixel SC0 Third guide pixel TA First transfer gate TB Second transfer gate TC Third transfer gate CH1 First CCD transmission gate CH2 Second CCD transmission gate CH3 Third CCD transmission gate CVA First vertical CCD transmission gate CVB Second vertical CCD transmission gate O ₁ First output port O ₂ Second output port O ₃ Third output port

Claims (4)

[Claims] 1. A first guide pixel (SA0); and the first guide pixel (SA0).
Of the second guide pixel (SA0) and the second guide pixel (SB0) arranged in close proximity to one side of the second guide pixel (SA0) with an appropriate insulation interval; Three
Of the first induction pixel (SA);
0) The first transfer gate (T
A) ;; a second transfer gate (TB) interposed between the second induction pixel (SB0) and the third induction pixel (SC0); and the third induction pixel (SC0) and others. A third transfer gate (TC) provided close to the side;
A first CCD transmission gate (CH1) provided outside the transfer gate (TA) of the third transfer gate (TC);
Second CCD transmission gate (CH2) provided outside
And a third CCD transmission gate (CH3) provided outside the second CCD transmission gate (CH2);
A first vertical CCD transmission gate (CVA) provided between the transfer gate (TC) of the second CCD transmission gate (CH) and the second CCD transmission gate (CH2);
A second vertical CCD transmission gate (CVB) provided between 2) and the third CCD transmission gate (CH3);
A linear color charge-coupled device image sensor formed by. 2. The signal transferred from the first guiding pixel (SA0) when the light is rapidly emitted and is guided to the first transfer gate (T).
A) to the first CCD transmission gate (CH1), and then horizontally in order to the first output port (O ₁ ) for output; the third induction pixel (SC0) induces The transferred signal is transferred from the third transfer gate (TC) to the first vertical CCD transmission gate (CVA), the second CCD transmission gate (CH2), and the second vertical CCD transmission gate (CVB).
Said second signal derived pixel (SB0) was induced; transmitted to the third CCD transfer gates (CH3) via the further third are transmitted and outputs the output to the port (O ₃₎ in the horizontal direction in this order , The second transfer gate (TB) after the third guiding pixel (SC0) has finished transmitting its guided signal.
From the third inductive pixel (SC0), the third transfer gate (TC), the first vertical CCD transmission gate (CVA) to the second CCD transmission gate (CH2), and further in the horizontal direction. A method of implementing a linear color charge-coupled device image sensor, comprising: transmitting to a _second output port (O ₂ ) for output; 3. When the second induction pixel (SB0) has an electron blank, the electron potential of the second induction pixel (SB0) is the third induction pixel (SC).
2. The linear color charge coupled device image sensor according to claim 1, wherein the electron potential is higher than the electron potential of 0). 4. The second and third induction pixels (SB0,
SC0) is formed into PNP type, and in the manufacturing process,
The linear color according to claim 1 or 3, wherein the implantation density of the P-type layer on the upper surface of the second induction pixel (SB0) is higher than the implantation density of the P-type layer on the upper surface of the third induction pixel (SC0). Charge coupled device image sensor.