JPH06163991A - Led for side surface light emission - Google Patents

Led for side surface light emission

Info

Publication number
JPH06163991A
JPH06163991A JP43A JP31152992A JPH06163991A JP H06163991 A JPH06163991 A JP H06163991A JP 43 A JP43 A JP 43A JP 31152992 A JP31152992 A JP 31152992A JP H06163991 A JPH06163991 A JP H06163991A
Authority
JP
Japan
Prior art keywords
light
led chip
led
emitted
frame
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP43A
Other languages
Japanese (ja)
Inventor
Takehiro Fujii
健博 藤井
Yasuhisa Mano
泰久 真野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP43A priority Critical patent/JPH06163991A/en
Publication of JPH06163991A publication Critical patent/JPH06163991A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • H01L33/60Reflective elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12041LED

Abstract

PURPOSE:To effectively emit a light from an LED chip to a single side, in an LED for single surface light emission wherein an LED chip is arranged on a plate surface of the single side of a planar frame. CONSTITUTION:A leading-out part 6 which reflects the light emitted from an LED chip 3 to unnecessary parts, and leads it out to a necessary part is formed, in the manner in which the end portion above a mount part 1A of a lead frame 1 in which the LED chip 3 is arranged is bent toward the side where the light of the LED chip 3 is emitted.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、LED(Light
Emitting Diode)チップからの光を片側
に放出させるようにした側面発光用LEDに関するもの
である。
BACKGROUND OF THE INVENTION The present invention relates to an LED (Light).
The present invention relates to a side surface light emitting LED that emits light from an emitting diode chip to one side.

【0002】[0002]

【従来の技術】従来、側面発光用LEDは図5に示すよ
うな構造になっており、1、2は表面に銀メッキが施さ
れた鉄製の平板状フレームで、一方のフレーム1の片側
の板面(マウント部1A)にLEDチップ3が配され、
即ちLEDチップ3のアノード側が銀ペースト付けによ
りダイボンディングされ、そのカソード側が他方のフレ
ーム2のワイヤーボンディング部2AにAu線4を用い
てワイヤーボンディングされている。
2. Description of the Related Art Conventionally, an LED for side surface light emission has a structure as shown in FIG. 5, and reference numerals 1 and 2 are iron plate-like frames whose surfaces are plated with silver. The LED chip 3 is arranged on the plate surface (mounting section 1A),
That is, the anode side of the LED chip 3 is die-bonded by silver paste attachment, and the cathode side thereof is wire-bonded to the wire bonding portion 2A of the other frame 2 using the Au wire 4.

【0003】そして、5はLEDチップ3をフレーム
1、2の一部と共に、即ちフレーム1、2のリード部1
B、2Bを外部に露呈した状態で図示点線のようにモー
ルドするモールド樹脂(例えば、エポキシ樹脂)で、そ
の一部を砲弾形状5Aにして、フレーム1の片側に放出
されるLEDチップ3からの光をある程度集光させるよ
うにしている。
Reference numeral 5 denotes the LED chip 3 together with a part of the frames 1 and 2, that is, the lead portions 1 of the frames 1 and 2.
B and 2B are exposed to the outside with a molding resin (for example, epoxy resin) that is molded as shown by the dotted line, and a part of the molding resin has a shell shape 5A. The light is focused to some extent.

【0004】[0004]

【発明が解決しようとする課題】ところが、このような
従来構成の側面発光用LEDでは、モールド樹脂5の砲
弾形状5AにてLEDチップ3からの光をある程度集光
させるようにしているものの、光が放出方向である片側
全体に広がって、そのLEDチップ3からの光が図6に
示すように必要部分A、B、C以外にフレーム板面に沿
った方向の不必要部分D、Eにも放出されることになる
ため、その分発光効率が低下していた。
However, in the side surface light emitting LED having such a conventional structure, although the light from the LED chip 3 is focused to some extent by the shell shape 5A of the mold resin 5, Is spread over one side, which is the emission direction, and the light from the LED chip 3 is not only required portions A, B, and C but also unnecessary portions D and E in the direction along the frame plate surface as shown in FIG. Since it is released, the luminous efficiency is reduced accordingly.

【0005】本発明はこのような点に鑑み成されたもの
であって、LEDチップからの光を片側に効率良く放出
させることができる側面発光用LEDを提供することを
目的とするものである。
The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a side surface emitting LED capable of efficiently emitting light from an LED chip to one side. .

【0006】[0006]

【課題を解決するための手段】上記した目的を達成する
ため本発明では、平板状フレームの片側の板面にLED
チップを配し、このLEDチップからの光を片側に放出
させるようにした側面発光用LEDにおいて、LEDチ
ップからの不必要部分への光を反射して必要部分に導出
させるための導出部をフレームに形成したものである。
In order to achieve the above object, in the present invention, the LED is provided on one plate surface of the flat frame.
In a side surface emitting LED in which a chip is arranged and light from the LED chip is emitted to one side, a lead-out portion for reflecting light to an unnecessary portion from the LED chip and leading it to a necessary portion is a frame. It was formed in.

【0007】[0007]

【作用】このような構成によれば、不必要部分に放出さ
れるLEDチップからの光が少なくなり、その分必要部
分に放出されることになる。そのため、必要部分での光
量が増し、可視光の場合には必要部分での明るさが増す
ことになる。
According to this structure, the light emitted from the LED chip to the unnecessary portion is reduced, and the light is emitted to the necessary portion accordingly. Therefore, the amount of light in the required portion increases, and in the case of visible light, the brightness in the required portion increases.

【0008】[0008]

【実施例】以下、本発明の一実施例について図面と共に
説明する。尚、従来と同一部品については同一符号を付
すと共にその説明を省略する。本実施例では、LEDチ
ップからの不必要部分への光を反射して必要部分に導出
させるための導出部をフレームに一体に形成するように
したものである。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. It should be noted that the same parts as those of the related art are designated by the same reference numerals and the description thereof will be omitted. In this embodiment, a lead-out portion for reflecting the light from the LED chip to the unnecessary portion and leading it to the necessary portion is formed integrally with the frame.

【0009】具体的には、図1に示すようにLEDチッ
プ3が配される一方のフレーム1のマウント部1A上方
の端部を、LEDチップ3の光を放出する側に湾曲させ
て、導出部6としたものである。
More specifically, as shown in FIG. 1, one end of the frame 1 on which the LED chip 3 is arranged, which is located above the mount portion 1A, is curved toward the light emitting side of the LED chip 3 and is led out. This is part 6.

【0010】このようにすると、LEDチップ3から上
方の不必要部(図6に示すE)に放出されていた光が導
出部6にて遮られ、且つその銀メッキ表面による鏡面作
用により反射されて必要部分側に導出されることにな
る。そのため、必要部分への光量が増し、LEDチップ
3からの光を効率良く放出させることができる。
In this way, the light emitted from the LED chip 3 to the upper unnecessary portion (E in FIG. 6) is blocked by the lead-out portion 6 and is reflected by the mirror effect of the silver-plated surface. Will be derived to the necessary part side. Therefore, the amount of light to the necessary portion is increased, and the light from the LED chip 3 can be efficiently emitted.

【0011】次に、図2では一方のフレーム1のマウン
ト部1A上方及び左右の端部と、そのマウント部1A下
方に位置する他方のフレーム2のワイヤーボンディング
部2A端部を、夫々LEDチップ3の光を放出する側に
湾曲させて、導出部7、8としたものである。
Next, in FIG. 2, the LED chip 3 is connected to the upper and left and right end portions of the mount portion 1A of one frame 1 and the end portions of the wire bonding portion 2A of the other frame 2 located below the mount portion 1A. The lead-out portions 7 and 8 are formed by curving the light-emitting side.

【0012】このようにすると、LEDチップ3から上
下、左右の不必要部分に放出されていた光のほとんどが
導出部7、8にて遮られ、且つその銀メッキ表面による
鏡面作用により反射されて必要部分側に導出されること
になる。そのため、必要部分への光量が大幅に増し、L
EDチップ3からの光をより効率的に放出させることが
できる。
In this way, most of the light emitted from the LED chip 3 to the upper, lower, left and right unnecessary portions is blocked by the lead-out portions 7 and 8 and reflected by the mirror effect of the silver-plated surface. It will be derived to the necessary part side. As a result, the amount of light to the necessary parts is greatly increased, and L
The light from the ED chip 3 can be emitted more efficiently.

【0013】そして、このような構造の側面発光用LE
Dは図3に示すようにプリント基板9上に横置きし、そ
の状態でフレームのリード部1B、2Bを基板9上面側
に形成された銅製のパターンPに、或いはホーミングし
て基板9下面側の銅製のパターンP’に半田付けして使
用されることになる。ここで、10は半田付け部であ
る。
Then, the LE for side emission having such a structure
As shown in FIG. 3, D is placed horizontally on the printed circuit board 9, and in that state, the lead portions 1B and 2B of the frame are formed on the copper pattern P formed on the upper surface side of the substrate 9 or on the lower surface side of the substrate 9 by homing. It is used by being soldered to the copper pattern P ′. Here, 10 is a soldering part.

【0014】尚、上記したような導出部6、7、8はフ
レーム1、2のプレス加工時に形成することができるた
め、側面発光用LEDの製造工程やコストを増加させる
ことはない。
Since the lead-out portions 6, 7, and 8 as described above can be formed when the frames 1 and 2 are pressed, the manufacturing process and cost of the side surface light emitting LED are not increased.

【0015】以上、図1、図2ではLEDチップ3の光
を放出する側にフレーム1、2の端部を湾曲させるよう
にしたが、図4に示すようにフレーム1のマウント部1
Aを光を放出させる側とは反対方向に大きく窪ませてパ
ラボラ形状の導出部11にし、その凹面状の板面側にL
EDチップ3を配するようにしても略同等の効果が得ら
れることになる。
As described above, in FIGS. 1 and 2, the ends of the frames 1 and 2 are curved to the side of the LED chip 3 which emits light, but as shown in FIG.
A is largely recessed in a direction opposite to the side from which light is emitted to form a parabola-shaped lead-out portion 11, and L is provided on the concave plate surface side.
Even if the ED chip 3 is arranged, substantially the same effect can be obtained.

【0016】但し、このようにするとプリント基板9上
に横置きして使用する際に、マウント部が光放出方向と
は反対側にふくらんでいる構造上、その厚みが少し増す
(T2>T1)と共に、フレーム1、2のリード部1
B、2Bが基板9に対して浮いた格好になるので、その
半田付けが不便でリード部1B、2Bに余計な応力が加
わる虞れがある。また、LEDチップ3のマウント時
に、そのフレーム1、2を載置固定して加熱、超音波処
理するための台座を、そのパラボラ形状の導出部11を
吸収できる構造にする、例えば凹みを有する構造にする
必要がある。
However, in this way, when the device is placed horizontally on the printed circuit board 9 and used, the thickness thereof is slightly increased due to the structure in which the mount portion is bulged on the side opposite to the light emitting direction (T2> T1). Together with the lead portions 1 of the frames 1 and 2
Since B and 2B are floated with respect to the substrate 9, soldering may be inconvenient and extra stress may be applied to the lead portions 1B and 2B. Further, when mounting the LED chip 3, the pedestal for mounting and fixing the frames 1 and 2 for heating and ultrasonic treatment has a structure capable of absorbing the parabolic lead portion 11, for example, a structure having a recess. Need to

【0017】[0017]

【発明の効果】上述した如く本発明に依れば、LEDチ
ップからの光をフレームの形状を一部変更するだけで効
率良く放出させることができるので、製造工程やコスト
を増加させることなく、簡単に発光効率の高い側面発光
用LEDを実現することができる。
As described above, according to the present invention, the light from the LED chip can be efficiently emitted by only partially changing the shape of the frame, so that the manufacturing process and the cost are not increased. It is possible to easily realize an LED for side light emission with high luminous efficiency.

【図面の簡単な説明】[Brief description of drawings]

【図1】 本発明を実現するためのフレーム形状の一例
を示す図。
FIG. 1 is a diagram showing an example of a frame shape for realizing the present invention.

【図2】 その他の形状例を示す図。FIG. 2 is a view showing another shape example.

【図3】 プリント基板への実装例を示す図。FIG. 3 is a diagram showing an example of mounting on a printed circuit board.

【図4】 その他の実施例を示す図。FIG. 4 is a diagram showing another embodiment.

【図5】 従来例を示す図。FIG. 5 is a diagram showing a conventional example.

【図6】 その光の放出方向を示す図。FIG. 6 is a diagram showing the light emission direction.

【符号の説明】[Explanation of symbols]

1、2 フレーム 3 LEDチップ 6、7、8、11 導出部 1, 2 frame 3 LED chip 6, 7, 8, 11 Derivation part

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 平板状フレームの片側の板面にLEDチ
ップを配し、このLEDチップからの光を片側に放出さ
せるようにした側面発光用LEDにおいて、LEDチッ
プからの不必要部分への光を反射して必要部分に導出さ
せるための導出部をフレームに形成したことを特徴とす
る側面発光用LED。
1. In a side surface light emitting LED in which an LED chip is arranged on a plate surface on one side of a flat frame and the light from the LED chip is emitted to one side, the light from the LED chip to an unnecessary portion is emitted. An LED for side surface light emission, characterized in that a lead-out portion for reflecting and leading out to a necessary portion is formed on a frame.
JP43A 1992-11-20 1992-11-20 Led for side surface light emission Pending JPH06163991A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP43A JPH06163991A (en) 1992-11-20 1992-11-20 Led for side surface light emission

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP43A JPH06163991A (en) 1992-11-20 1992-11-20 Led for side surface light emission

Publications (1)

Publication Number Publication Date
JPH06163991A true JPH06163991A (en) 1994-06-10

Family

ID=18018336

Family Applications (1)

Application Number Title Priority Date Filing Date
JP43A Pending JPH06163991A (en) 1992-11-20 1992-11-20 Led for side surface light emission

Country Status (1)

Country Link
JP (1) JPH06163991A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001024281A1 (en) * 1999-09-30 2001-04-05 Osram Opto Semiconductors Gmbh & Co. Ohg Optoelectronic component that comprises a reflector and method for producing said component
EP2329538B1 (en) * 2008-09-22 2019-02-20 OSRAM Opto Semiconductors GmbH Housing for an optoelectronic component

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001024281A1 (en) * 1999-09-30 2001-04-05 Osram Opto Semiconductors Gmbh & Co. Ohg Optoelectronic component that comprises a reflector and method for producing said component
EP2329538B1 (en) * 2008-09-22 2019-02-20 OSRAM Opto Semiconductors GmbH Housing for an optoelectronic component

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