JPH06163928A - Tunnel injection semiconductor device - Google Patents

Abstract

PURPOSE:To provide a tunnel injection semiconductor device in which energy distribution is sharpened while realizing high speed operation and large current through the use of resonance tunnel injection. CONSTITUTION:Semiconductor layers 2-5 of modulated dope structure, each having a layer 4 doped with donar impurities, are formed on a substrate 1. Side face of the modulated dope structure is then cleaved or etched within a predetermined angular range to expose an end face 6. Semiconductor layers 5-10 of tunnel structure are then formed on the end face 6 and carriers are tunnel injected from the semiconductor layer of tunnel structure into the semiconductor layers 2-5 of modulated dope structure. This structure allows injection of high current with narrow energy distribution into a two-dimensional electron channel having modulated dope structure.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a tunnel injection semiconductor device applicable to the fields of high-speed calculation and microwave communication, and in particular, electrons are two-dimensional (quantum well or heterojunction structure), one-dimensional (quantum wire), Alternatively, the present invention relates to a tunnel injection semiconductor device having a quantum microstructure that is confined in 0 dimension (quantum box).

[0002]

[Prior Art] Leo Esaki and others [L. Esaki and R. Tsu, IB
M J. Res. Develop. 14,61 (1970); L. Esaki and R. Ts
u, IBM Research Note RC-2418 (1969); L. Esaki, Phy
s. Rev. 109,603 (1958; L. Esaki, Proc. IEEE62, 825
(1974), and IEEE Trans. Electron Devices ED-23, 6
44 (1976)] invented a resonant tunneling diode or the like, which is a device utilizing the tunneling effect of electrons, and these are used for generating microwaves, for example.

On the other hand, various quantum interference devices based on electron wave interference have already been proposed. [Fernando Sols, M. Macuc
ci, U. Ravaioli, K. Iless, 'Theory for a quantum m
odulated transistor '; N. Tsukada, ADWieck, K. Plo
og, Appl. Phys. Lett 56, 2527 (1990); H. Sakaki, J
pn. J. Appl. Physics 19, L735 (1980), and Inst.of
Physics Conf. Series 63, 251, (1981); S. Datta, M.
R. Melloch, S. Bandyopadhyay, and MS Lundstrom,
Appl. Phys. Lett. 48, 487 (1986); M .. Yamanishi, S
uperlattices and Microstructures B6,403 (1989); A.
Shimizu, Physical Review A43, 3819 (1991); A. Yac
oby, U. Sivan, CPUmbach, and JMHong, Phys. Rev.
Lett. 66, 1938 (1991)]. In each of these proposals, electrons are injected by a diffusion type electrode, and the energy distribution is almost close to thermal equilibrium, so that it is said that the electrons work only at a very low temperature.

[0004]

However, the application of the resonant tunneling diode requires that the peak-to-valley ratio of the current-voltage characteristic is large, but it is difficult to obtain this large ratio. This is a problem in manufacturing.

A major problem of the conventionally proposed quantum interference device is that it can be expected to operate only at a very low temperature (usually 1K or less) and a very small current. The main obstacle is the difficulty of injecting monoenergetic electrons. In the conventional device, a single-energy electron was obtained by operating at a low temperature of a few millikelvin or by using a point contact device in which the width of the channel was extremely narrowed. Since it is limited to a low value, the application of the device is also limited.

The present invention solves the above problems and provides a tunnel injection semiconductor device which utilizes resonance tunnel injection to sharpen the energy distribution, realize high-speed operation, high current density, and high noise resistance. The purpose is to do. Another object of the invention is to enable tunnel injection of high-energy ballistic carriers with a sharp energy distribution in the injection of carriers into semiconductor devices (diodes, field effect transistors, interferometers).

[0007]

To that end, the present invention provides a semiconductor layer on a substrate having one or more two-dimensional or one-dimensional or bonded zero-dimensional electron or hole channels, which are then formed. A side surface of the structure is cleaved or etched in a predetermined angle range to expose an end surface, one or more semiconductor layers having a tunnel structure are formed on the end surface, and carriers are tunnel-injected from the semiconductor layer having the tunnel structure into a channel. It is characterized by being configured. In addition, a semiconductor layer having one or more two-dimensional or one-dimensional or bond-zero electron or hole channels is formed on a substrate, and then two opposite side surfaces of the channels are formed in a predetermined angle range. Cleavage or etching exposes the end faces, one or a plurality of semiconductor layers having a tunnel structure is formed on each of the end faces, and carriers are tunnel-injected from one semiconductor layer of one tunnel structure into a channel, and another semiconductor layer of the other tunnel structure is formed. It is characterized in that the carrier is taken out from the semiconductor layer.

[0008]

In the tunnel injection semiconductor device of the present invention, the quantum thin line () formed between adjacent two-dimensional or one-dimensional or coupled zero-dimensional channels in the resonant tunneling injection device placed at an angle to the substrate ( Since electrons or holes carriers are tunnel-injected into the channel via the (quantum box) state, a large current having a narrow energy distribution can be injected.

The manufacturing method is as follows:
One or a plurality of two-dimensional electron or hole channels or quantum wires or coupled quantum boxes are formed. After this step, end faces are exposed by etching or the like, and a resonant tunneling structure is formed on the exposed end faces as a second step. .

The formation of these layer structures is performed by molecular beam epitaxy (MBE), but other methods (MOC
VD etc.). Heterojunctions (silicon-germanium alloy combinations, or III-V or other semiconductor combinations) or quantum wells can be used to confine the electrons or holes in the two-dimensional channel, and modulation-doped structures are preferred. .

Also, the surface of the exposed end face is usually 90 ° or 6 ° with respect to the channel plane formed in the first step.
An angle of 0 ° is used, but other angles are possible. On top of that, as a resonant tunneling structure, a tunnel barrier layer using a material with a large band gap, a tunnel quantum well using a material with a small band gap, a tunnel barrier layer, and a thickly doped thick contact. The layers are sequentially formed, and finally a diffusion type ohmic electrode is formed.

The device operates such that the voltage across the tunnel structure is the same as the voltage that causes the resonant tunneling effect. Then, the point adjacent to the channel formed in the first stage in the tunnel quantum well has the lowest potential. Therefore, since the quantum wire (quantum box) state is realized in the tunnel structure, the tunnel effect is left through the quantum wire.
Quantum wires are known to exhibit very sharp electron tunneling resonance due to the special property of their density of states. Therefore, at resonance, carriers with a very narrow energy distribution are injected into the channel of the device.

[0013]

EXAMPLES Examples of the present invention will be described below. [Embodiment 1]: Tunnel injection diode FIG. 1 is a diagram showing the configuration of an embodiment of a tunnel injection semiconductor device of the present invention using a tunnel injection diode, and FIG. 2 is another embodiment of the tunnel injection semiconductor device of the present invention using a tunnel injection diode. The figure which shows an example structure, FIG. 3 is a figure which shows the tunnel injection principle of the electron through a quantum wire state, FIG. 4 is a figure for demonstrating the tunnel current in a double barrier tunnel structure,
FIG. 5 is a diagram showing a current-voltage characteristic (a curve) of a tunnel injection diode and a current-voltage characteristic (b curve) of a conventional resonant tunneling diode.

The tunnel injection diode shown in FIG. 1A has a molecular beam epitaxy (MB) on a GaAs substrate 1.
E: Molecular Beam Epitaxy and MOCVD: Metalorganic Chemical Vapor Depositi
on) and the like, and is formed through a two-step laminating process.

First, as the first step, Ga in the direction of A in the figure is used.
An undoped GaAs buffer layer (500 nm) 2 is formed on the substrate 1 of As, and further undoped Al
GaAs spacer layer (10 nm) 3, n-type doped Al
GaAs layer (80 nm) 4, GaAs layer on top (1
0 nm) 5 is formed. By this first-stage layer formation, a semiconductor layer having a modulation-doped structure having a two-dimensional electron channel in which the donor impurity is doped only in the AlGaAs layer is formed.

After that, the side surface of the modulation-doped structure is cleaved or etched at 90 ° or another predetermined angle range, for example, as shown in the drawing so that the (110) plane or the (111) plane is exposed in a vacuum. Exposing the end face 6
In the second step, a double barrier tunnel structure layer is formed.

In the second step, the semiconductor layer having the modulation-doped structure is turned around so that the undoped AlGaAs tunnel barrier layer (4n) is formed on the end face 6 in the direction of B in the figure.
m) 7, undoped GaAs tunnel quantum well layer (6
nm) 8, a second tunnel barrier layer (4 nm) 9, and an n-type doped GaAs contact layer (2 μm) 10 are sequentially formed.

After that, the substrate is taken out from the MBE chamber. It is necessary to form diffusion type ohmic electrodes 11 and 12 in the n-type layer 10 having the tunnel structure and the two-dimensional electron gas layer 2'on the opposite side as at least an additional treatment.

In this semiconductor device (tunnel injection diode), carriers pass through a double barrier tunnel structure 7, 8, 9 formed on an end face 6 of the device substrate 1,
Proceed to the heterojunction interface or channel consisting of the two-dimensional electron gas layer 2'in the quantum well. Then, the carriers of the two-dimensional electron gas layer 2'are collected in the drain 12 provided with the ohmic electrode.

The tunnel injection diode shown in FIG. 1B has the double barrier tunnel structure 7, 8 shown in FIG.
9 is provided on both sides of the channel, and on the opposite side of the double barrier tunnel structures 7, 8 and 9, an undoped AlGaAs tunnel barrier layer (4 nm) 14 in the direction of C in the figure,
Undoped GaAs tunnel well layer (6 nm) 15,
This shows a structure in which a double barrier tunnel structure is provided by sequentially forming a second tunnel barrier layer (4 nm) 16 and an n-type doped GaAs contact layer (2 μm) 17.

In this tunnel injection semiconductor device, carriers pass through the double barrier tunnel structures 7, 8 and 9 formed on the end face 6 of the device substrate 1 to the heterojunction interface or quantum well. Proceed to the channel consisting of the two-dimensional electron gas layer 2 '. The carriers are then collected in the drain with the ohmic electrode through the double barrier tunnel structures 14-17 formed on the opposite side.

The tunnel injection diode shown in FIG. 2 has a structure having a two-dimensional electron channel composed of a plurality of quantum wells instead of the heterojunction channel shown in FIG. 1 (A). The manufacturing method is as follows: n-type doped AlGaA on the GaAs buffer layer 2 in the first step.
An s layer (30 nm) and an undoped GaAs quantum well layer (5 nm) are alternately laminated a desired number of times, and GaA is formed on the top.
1A is the same as that of FIG. 1A except that the s layer (50 nm) is formed.

In the tunnel injection diode of the present invention, as shown in FIG. 3, a negative voltage is applied to the source 11 with respect to the drain 12 having the ground potential. When used as a logic device or a microwave generator, the negative resistance characteristic of this device is used. When the applied voltage satisfies the resonance condition, the electrons efficiently tunnel from the source to the drain, the maximum current is obtained, and the negative resistance appears at a voltage higher than that. In the present invention, since the tunnel effect occurs through the quantum wires as described above, the resonance appears very sharply and the scattering can be suppressed. Therefore, the tunnel injection diode of the present invention can increase the peak-to-valley ratio and therefore the negative resistance, and thus can be used in a microwave generator or a logic circuit to obtain good characteristics. .

The operation will be further described in detail. In the tunnel injection diode of the present invention, when the applied voltage is gradually increased, the applied voltage is low as shown in the region V1 of FIG. 4A and FIG. 5 (the potential on the left side of the tunnel structure is The diode current (before reaching resonance with the bound level in the well) increases to some extent. However, when the voltage is further increased, the electron energy on the left side of the tunnel injection structure and the bound energy level in the quantum well resonate with each other as shown in the region V2 of FIG. There is a significant increase. After that, the resonance disappears and the tunnel current sharply decreases. As a result, a current peak appears as shown by V2 in FIG. At this time, if it is an ideal tunnel diode, the current should drop to zero due to the conservation law of parallel momentum in the tunnel process,
In reality, such ideal operating characteristics are disturbed by scattering (impurity scattering and phonon scattering), and the peak-valley ratio is limited. When the voltage becomes higher as in the region of V3 in FIG. 4C and FIG. 5, direct excitation over the tunnel barrier occurs, and the current sharply increases.

As described above, in the tunnel injection diode of the present invention, the quantum wire state 8'is generated between the two tunnel barriers composed of the undoped AlGaAs tunnel barrier layers 7 and 9, so that the N-shaped tunnel characteristic is sharper. Resonance is obtained. That is, the conventional resonant tunneling diode injects electrons through the two-dimensional electron state, whereas the tunnel injection diode of the present invention injects electrons through the one-dimensional quantum wire state.
As shown in the current-voltage characteristic of (a), sharper resonance and a larger peak-to-valley ratio are obtained as compared with the characteristic of the conventional resonant tunneling diode of FIG. 5 (b). Since the range where resonance and negative differential resistance characteristics appear is used for normal device applications, the ratio of peaks and valleys of the characteristics determines the value of resonant tunneling diodes in most applications, including logic device applications. It is a thing.

Although AlGaAs was used in the above embodiment, GaInAs can be used instead of AlGaAs, and the combination of GaAs and AlGaAs can be changed to another suitable alloy such as silicon germanium. Is.

Second Embodiment: Tunnel Injection Field-Effect Transistor FIG. 6 is a diagram showing a configuration of an embodiment of a tunnel injection semiconductor device of the present invention using a tunnel injection field effect transistor. The structure of this tunnel injection field effect transistor is
It is made by MBE (MOCVD or other epitaxy method may be used) as in the first embodiment.

First, in the first step, an undoped GaAs buffer layer (500 nm) 2 is formed on a GaAs (100) substrate 1 as a semiconductor layer having a modulation-doped structure, and then an AlGaAs undoped layer (10 n) is sequentially formed.
m) 3, n-type doped AlGaAs modulation-doped layer (80
4), and an n-type GaAs layer (10n
m) 5 is formed.

After the semiconductor layer having the modulation-doped structure is formed in the first step, the end face is exposed by cleaving or etching the sample including the semiconductor layer, and the end face (110) 6
As a second step, a semiconductor layer having a resonant tunnel structure is formed by the MBE method along the [110] direction.

In the second stage, undoped AlGaAs
Tunnel barrier layer (4 nm) 7, undoped GaAs tunnel well layer (6 nm) 8, undoped AlGaAs
A semiconductor layer having a double barrier tunnel structure is formed in the order of a tunnel barrier layer (4 nm) 9 and an n-type doped GaAs contact layer (2 μm) 10.

After these semiconductor layers are formed, the sample is taken out from the MBE chamber and subjected to a process for producing one or a plurality of devices by lithography. For example, in FIG.
As shown in, the electrodes of the source 11, the drain 12, and the gate 13 are formed. The source 11 and the drain 12 are ohmic alloy electrodes, and the gate 13 is a thin film of a metal such as aluminum or titanium, which is insulated from the underlying layer, forming a Schottky junction such as tungsten silicide.

In the tunnel injection field effect transistor shown in FIG. 6, the carriers pass through the double barrier tunnel structure 7, 8, 9 located on the end face 6 on the device substrate 1 to the heterojunction interface or quantum well. Proceed as a ballistic carrier to the inner channel 2 '. Then, the carriers are collected in the drain 12 provided with the ohmic electrode, and the source / drain current is adjusted by the gate 13. In this structure, the carrier moves ballistically with energy higher than the Fermi level, so that high speed operation can be realized in this device.

In the conventional field effect transistor, since electrons are injected through the alloy electrode, there is a heat distribution and the speed is limited. In the present invention, by using the double barrier tunnel structure as described above, it is possible to inject electrons having a high energy and a sharp energy distribution above the Fermi level. Therefore, the electron transfer time under the gate is very short. Therefore, a high-speed switching operation is possible and it is suitable as a microwave transistor. Further, it is expected that the stability with respect to temperature change is improved. The voltage applied to the gate has two effects on the semiconductor device. First, the gate potential depletes the carriers in the electron channel, as in a normal field effect transistor. On the other hand, the electric field generated by the potential of the gate affects the resonance tunnel effect of the double barrier structure for electron injection. By combining these two effects, the transconductance can be increased as compared with a normal field effect transistor.

FIG. 7 is a diagram showing the structure of a planar quantum interference device having a carrier tunnel injection structure. In the quantum interference device, it is necessary to inject electrons having a narrow energy distribution, which can be obtained by dividing the gate electrode at a narrow interval with the same configuration as the field effect transistor of FIG. 6 as shown in the figure. . The resistance of the channel between the split gates is very high (25 kΩ), but if a tunnel injection structure is used, a relatively large current can be injected due to the narrow energy distribution.

[Embodiment 3]: Quantum wire type interference device having tunnel injection structure FIG. 8 shows an embodiment of a tunnel injection semiconductor device of the present invention having a quantum interference device structure in which carriers are tunnel-injected into a pair of quantum wires. FIG. 9 and FIG. 9 are diagrams showing an embodiment of an interferometer for tunnel injection into a plurality of quantum wires.

As shown in FIGS. 8 and 9, fabrication of a quantum wire type interference device having a tunnel injection structure is carried out in three stages of MB.
E growth is required. That is, in the first stage, GaA
GaAs substrate with GaAs buffer layer (500 nm), A
An IGaAs barrier layer (40 nm), a GaAs quantum well layer (10 nm), and a next AlGaAs barrier layer (40 nm) are sequentially stacked. Moreover, such stacking is repeated for the desired number of quantum well periods except for the buffer layer. A practical interferometer requires a plurality of quantum wires to obtain a large current. Then, GaAs is placed on the top layer (10
0 nm).

The side surface of the layer structure laminated in the first step is cleaved or etched in an ultrahigh vacuum within a predetermined angle range to expose the end surface, and the second step layer is formed on the end surface.

The layer structure laminated in the second step is a modulation-doped structure and plays a role of forming a quantum wire in the quantum well near the growth interface of the second step. This layer is an AlGaAs spacer layer (10 nm), n-type AlGaA for modulation doping.
s layer (500 nm), top n-type GaAs layer (50 n
m). After the formation of the layered structure in the second step, these samples are further cleaved or etched at a predetermined angle with respect to the previous end face in vacuum. The orientation of this second sample is shown in FIGS. A structure for tunnel injection is formed on this end face.

This tunnel injection structure is similar to that of the previous embodiment in that the undoped AlGaAs tunnel barrier layer (4 nm), the undoped GaAs tunnel quantum well layer (6 nm) and the second undoped AlGaAs tunnel barrier layer. (4 nm), followed by an n-type doped GaAs contact layer (2 μm). Further, after forming up to this point, it is possible to further stack a double barrier tunnel structure for the drain as shown in FIG.

In the interferometer shown in FIG. 8, the left side is connected with an ohmic electrode via a tunnel injection structure, and the right side is connected with ohmic electrodes (or two electrodes) via a plurality of one-dimensional electron gases.
The second tunnel structure) is connected. Further, as in the previous embodiment, the gate electrode of the Schottky junction is arranged on the side surface or the upper side of the interference device.

The interferometer operates by applying a bias voltage to the gate electrode and gives a phase difference to the electrons in each quantum wire by the bias voltage, thereby causing an interference effect. Therefore, by changing the gate bias, the maximum and minimum states of electron transmittance of the interferometer can be obtained. Since the electron energy distribution injected into such an interference device is determined by the characteristics of the tunnel injection structure,
The interference device can operate with a large current even at room temperature.

Several quantum wire type interference devices have already been proposed, but none of them has come to practical use.
One of the problems is that the proposals so far have used a one-dimensional channel with a separated gate because of the necessity of injecting electrons having a small energy distribution, and therefore they are not suitable for applications requiring a large current. The interference device according to the present invention having the tunnel injection structure solves this problem by utilizing the resonance tunnel effect. This allows electrons with a small energy distribution and a large current to be injected into the interferometer.

Other Embodiments: Integrated Circuit Utilizing Tunnel Injection FIG. 10 shows a plurality of electric field effects on one substrate by arranging the tunnel injection structure on the etched surface of the channel layer formed in the first step. 11 is a cross-sectional view showing that the transistors can be put together, and FIG. 11 is a perspective view thereof.

The drawings showing the above-mentioned respective embodiments show that the tunnel injection structure is arranged on the cleaved surface of the substrate, and this method is suitable for making individual devices. It is also suitable for forming multiple devices on the same substrate. That is, FIGS. 10 and 11 show an example of forming an integrated circuit using the tunnel injection structure.

The following method is used to make several tunnel implanters on one substrate. In the first step, a modulation-doped heterostructure or a modulation-doped quantum well structure is formed on the substrate as described in each of the above embodiments. Next, the first channel layer is removed at a plurality of angles of 45 ° or 60 ° by etching or the like. In the second stage, a multiple resonance tunnel injection structure is created on the cut end face. Further, in the third step, a plurality of gates and ohmic electrodes are also formed on these composite laminated structures. As a result, multiple resonance tunnel injection diodes and tunnel injection transistors are formed on the semiconductor wafer.

The present invention is not limited to the above embodiment, but various modifications can be made. For example, in the above embodiment, the cleavage and etching angles of the semiconductor layer are 90 °, 60 ° and 45 °, but 10 ° to 170 °.
It can be freely selected within a predetermined angle range of °. Also, the semiconductor layer of the modulation-doped structure is composed of a combination of one or more doped heterojunctions or quantum wells and contains one or more two-dimensional or one-dimensional or coupled zero-dimensional electron gas or hole gas. It is a waste. The semiconductor layer constituting the present invention is formed, for example, based on a Group IV element, and the quantum well and the heterojunction material are made of silicon, germanium, or an alloy of silicon and germanium, and some of them are channels. Doped to form layers and quantum wires. The quantum well and the heterojunction material are GaAs and Ga _x Al _1-x A
s, Ga _x In _1-x As and Al _x In _1-x As, and other III-V group compound semiconductors, some of which are doped to form a channel layer or a quantum wire. Good.

[0047]

As is apparent from the above description, according to the present invention, unlike the two-dimensional state of the conventional resonant tunneling diode, the tunnel effect occurs through the quantum wire (quantum box) state, and the high quality is achieved. Since the quantum wire (quantum box) has a sharp peak of the density of states, and most of the scattering is reduced in the quantum wire (quantum box), the peak of the N-shaped characteristic is higher than that of the conventional resonant tunneling diode. And the ratio of valleys can be increased. Therefore, the tunnel injection semiconductor device of the present invention can improve the device function by using the resonance tunnel injection for the injection of carriers of the tunnel diode, the field effect transistor, and the quantum interference device. The tunnel injection diode of the present invention is suitable for applications such as microwave generators and high-speed digital logic devices, and the tunnel injection field effect transistor is suitable for amplification of microwaves. Further, the tunnel injection device of the present invention enables a large electron current in the quantum interference device.

[Brief description of drawings]

FIG. 1 is a diagram showing a configuration of an embodiment of a tunnel injection semiconductor device of the present invention using a tunnel injection diode.

FIG. 2 is a diagram showing the configuration of another embodiment of a tunnel injection semiconductor device of the present invention using a tunnel injection diode.

FIG. 3 is a diagram showing a principle of tunnel injection of electrons through a quantum wire state.

FIG. 4 is a diagram for explaining a tunnel current in a double barrier tunnel structure.

FIG. 5 is a diagram showing a current-voltage characteristic (a curve) of a tunnel injection diode according to the present invention and a current-voltage characteristic (b curve) of a conventional resonant tunneling diode.

FIG. 6 is a diagram showing the configuration of an embodiment of a tunnel injection semiconductor device of the present invention using a tunnel injection field effect transistor.

FIG. 7 is one of the tunnel injection semiconductor device of the present invention by a plane quantum interference device having a tunnel injection structure of carriers.
It is a figure which shows the Example structure.

FIG. 8 is a diagram showing an embodiment of a tunnel injection semiconductor device of the present invention having a quantum interference device structure in which carriers are tunnel-injected into a pair of quantum wires.

FIG. 9 is a diagram showing an embodiment of a tunnel injection semiconductor device of the present invention by a quantum interference device that tunnel-injects into a plurality of quantum wires.

FIG. 10 is a cross-sectional view showing that a plurality of devices can be assembled on one substrate by disposing a tunnel injection structure on the etched surface of the channel layer formed in the first step.

11 is a perspective view of FIG.

[Explanation of symbols]

1 ... Substrate, 2 ... Buffer layer, 3 ... Spacer layer, 4 ... N-type doped AlGaAs layer, 5 ... GaAs layer, 6 ... Cleaved surface, 7, 9 ... Tunnel barrier layer, 8 ... Tunnel quantum well layer, 10 ... GaAs contact layer, 11 ... diffusion type ohmic electrode

Claims (3)

[Claims] 1. A semiconductor layer having one or more two-dimensional or one-dimensional or bonded zero-dimensional electron or hole channels is formed on a substrate, and then the side surfaces of the channels are cleaved within a predetermined angle range. A tunnel injection semiconductor characterized in that the end face is exposed by etching, one or more semiconductor layers having a tunnel structure are formed on the end face, and carriers are tunnel-injected from the semiconductor layer having the tunnel structure into a channel. apparatus. 2. A semiconductor layer having one or more two-dimensional or one-dimensional or bonded zero-dimensional electron or hole channels is formed on a substrate, and then two opposite side surfaces of the channels are formed at predetermined positions. Cleavage or etching is performed in an angular range to expose the end faces, one or more semiconductor layers having a tunnel structure are formed on each of the end faces, and carriers are tunnel-injected into the channel from the semiconductor layers having one tunnel structure, A tunnel injection semiconductor device characterized in that carriers are taken out from a semiconductor layer having a tunnel structure. 3. The tunnel injection semiconductor device according to claim 1 or 2, wherein 1 is provided on an upper portion or a side surface of the channel.
A tunnel injection semiconductor device having one or a plurality of gates arranged therein.