JPH06163882A - Semiconductor device - Google Patents

Abstract

PURPOSE:To obtain a semiconductor device in which an O-ring can be surely positioned and the intrusion of unhardened Si rubber from the outside can be prevented and which has stable electric characteristics. CONSTITUTION:A step section 30 used for positioning an O-ring 26 which is used for sealing the clearance between a hole 29 and gate lead wire 25 is formed in the hole 29.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device in which a control electrode lead wire is drawn out from a hole formed in an electrode block.

[0002]

2. Description of the Related Art FIG. 2 is a perspective view showing a semiconductor device disclosed in Japanese Patent Publication No. 63-34625, for example.
Is a partial cross-sectional view, and (b) is a diagram showing a configuration of an assembly part thereof. In the figure, 1 is a GTO which is a semiconductor element.
Thyristor element, 2 is a diode element, 3
a, 3b and 3c are electrode blocks for making surface contact with the above-mentioned elements 1 and 2 and extracting electric current to the outside, and 4 is a terminal post for facilitating attachment of the hexagon bolt 5.
It is used by inserting it into the electrode blocks 3a, 3b, 3c. 6
Is a disc spring and 7 is an end plate. These are GTOs.
It is a pressure contact mechanism component for pressurizing and holding the thyristor element 1 and the diode element 2, and is made of aluminum, and the end plate 7 is provided in the housing groove portion 10 provided in the bottom housing 8 and the top housing 9.
The GTO thyristor element 1 and the diode element 2 can be pressure-held by fitting the flange portion 11 of the. 12 is an insulating sheet made of Si rubber for electrically insulating the housings 8 and 9 from the elements 1 or 2 or the electrode blocks 3a, 3b and 3c, and 13 and 14 are made of disc springs 6 and iron. It is an insulating plate for electrically insulating the end plate 11 described above.

3A and 3B are views showing the structure of the electrode block 3a shown in FIG. 2. FIG. 3A is a plan view and FIG. 3B is a sectional view. In the figure, 15 is a flat washer made of stainless steel, 16 is a disc spring, and the flat washer 15 and the disc spring 16 are made of molybdenum as an annular gate electrode 17 and a gate electrode of the GTO thyristor element 1 (not shown). Is held under pressure. Reference numeral 18 is a mica plate, and 19 is a Teflon sheet, which is an insulation mechanism component for electrically insulating the annular gate electrode 17 and the electrode block 3a.
Reference numeral 20 is a cathode molybdenum plate, 21 is a cathode copper plate, and 22 is a cathode molybdenum plate, which makes pressure contact with the cathode electrode (not shown) of the GTO thyristor element 1 and also makes surface contact with the electrode block 3a to form a conductive path. It is an insertion plate for.

Reference numeral 23 is a gate terminal, which is an annular gate electrode 17.
Is attached to the electrode block 3a by an insulating tube 24 made of Teflon and silicone rubber.
It is pulled out to the outside while being insulated from the take-out hole 29 provided in the. The gate terminal 23 and the gate lead wire 25, which is a control electrode lead wire made of silver, are joined by a caulking component (not shown). An O-ring 26 is formed of, for example, a silicon-based material, and is used to fill a gap between the gate terminal 23 and the hole 29 of the electrode block 3a.

Next, the operation of the semiconductor device having the above structure will be described. Electrode block 3a, GTO thyristor element 1, electrode block 3b, diode element 2,
In the state where the electrode blocks 3c are sequentially contacted in series, the insulating plate 13, the insulating plate 14, the disc spring 16 and the end plate 7 are set on both side surfaces, and an external pressurizing mechanism (not shown) is normally used to weigh 2000 kg. Pressurize with load. Then, in a pressurized state, the insulating sheet 12 is attached to the electrode blocks 3a, 3
Wrap around b and 3c, then the housing groove 10
Then, the bottom housing 8 and the top housing 9 are set so that the flange portions 11 of the end plate 7 are fitted to each other. The bottom housing 8 and the top housing 9 are fixed by bolts 27 at a total of eight locations at equal intervals. Then, Si rubber is applied between the insulating plate 28 and the top housing 9 to fix the insulating plate 28. Further, in order to isolate the inside of the housings 8 and 9 from the outside air, silicone rubber is filled in the A, B and C portions which are the peripheral portions of the hexagon bolt 5 and the D portion which is the surface portion of the end plate 7. Silicon rubber is also filled in the surface D on the opposite side (not shown). As the silicone rubber, a room temperature curing type two-component silicone rubber is usually used.

Next, the method of assembling the electrode block 3a will be described in detail. First, the terminal post 4 is inserted into the electrode block 3a, and then the flat washer 15 and the disc spring 16 are inserted into the groove into which the annular gate electrode 17 of the electrode block 3a is inserted.
Then, the mica plate 18 is inserted as shown in FIG. 3B, and then the gate terminal 23 to which the insulating tube 24 and the gate lead wire 25 are previously attached is passed through the hole 29 used in the electrode block 3a and pulled out to the outside. . Then, from the tip of the gate lead wire 25, insert an O-ring 26 into the hole 2
Insert it so that it fits in the predetermined position of 9. This completes the assembly of the electrode block 3a.

[0007]

The conventional semiconductor device is constructed as described above, and when the O-ring 26 is inserted so that it fits into a predetermined position of the hole 29 formed in the electrode block 3a, the hole 29 is Since it is formed in a cylindrical shape, if the O-ring 26 is strongly pushed from the outside, for example, it will go deep into the hole 29 of the electrode block 3a and the gate terminal 2
3 is formed between the hole 3 and the hole 29, and the Si rubber before curing enters through the gap, and the Si rubber penetrates the annular gate electrode 1
7 and the Teflon sheet 19 may reach the surface of the GTO thyristor element 1 and flow into the contact interface between the cathode molybdenum plate 22 and the GTO thyristor element 1. The contact resistance between the GTO thyristor element 1 and the cathode molybdenum plate 22 increases due to the influence of the Si rubber that has flown in this way, which increases the power loss when the GTO thyristor element 1 is energized, and thus the GTO thyristor element 1 There were problems such as the destruction of the.

The present invention has been made in order to solve the above problems, and the O-ring can be reliably positioned, thereby preventing Si rubber before curing from entering from the outside. An object is to obtain a semiconductor device having stable electric characteristics.

[0009]

In the semiconductor device according to the present invention, a step portion for positioning an O-ring for sealing between the hole and the control electrode lead wire is formed inside the hole formed in the electrode block. It is a thing.

[0010]

In the semiconductor device of the present invention, since the O-ring is positioned at the step portion, no gap is formed between the O-ring and the inner wall surface of the hole.

[0011]

【Example】

Example 1. Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a diagram showing a first embodiment of the present invention, in which (a)
Is a plan view of the electrode block, (b) is a sectional view thereof,
In the figure, parts that are the same as or correspond to those in FIGS. 2 and 3 are given the same reference numerals, and descriptions thereof will be omitted. 30 is an electrode block 3a
It is a step portion for positioning the O-ring 26 formed inside the hole 29.

Next, the operation will be described. First, the terminal post 4 is inserted into the electrode block 3a, and then the flat washer 15, the disc spring 16 and the mica plate 18 are inserted into the groove into which the annular gate electrode 17 of the electrode block 3a is inserted as shown in FIG. 1 (b). To do. Insulation tube 2 in advance
The gate terminal 23 to which the gate lead wire 25 covered with 4 is attached is pulled out to the outside through the hole 29 formed in the electrode block 3a. Then, the O-ring 26 is inserted from the tip of the gate lead wire 25 until it abuts on the step portion 30 inside the hole 29.

Example 2. In the above embodiment, the case where the invention is applied to the GTO thyristor element 1 as a semiconductor element has been described, but it goes without saying that the invention can be applied to other thyristor elements.

[0014]

As described above, according to the semiconductor device of the present invention, since the O-ring is positioned at the predetermined position inside the hole by the step portion, the O-ring and the inside of the hole are There is no gap between the wall surface and the outside, for example, uncured Si rubber is prevented from entering the inside, and the electrical characteristics are stabilized, and the reliability is improved.

[Brief description of drawings]

FIG. 1A is a plan view of an electrode block of a semiconductor device according to an embodiment of the present invention, and FIG. 1B is a side sectional view of FIG.

FIG. 2A is a perspective view showing a semiconductor device in which an electrode block is assembled, and FIG. 2B is a perspective view showing a configuration of an assembly part thereof.

3A is a plan view showing an example of an electrode block of a conventional semiconductor device, and FIG. 3B is a side sectional view of FIG. 3A.

[Explanation of symbols]

1 GTO thyristor element (semiconductor element) 3a electrode block 17 annular gate electrode 23 gate terminal 24 insulating tube 25 gate lead wire (control electrode lead wire) 26 ring 29 hole 30 stepped portion

Claims (1)

[Claims] 1. An electrode block, a semiconductor element in which pressure is held between the electrode blocks to make electrical contact and heat conduction with the electrode blocks, and a tip portion is connected to a terminal of the electrode block and is covered with an insulating tube. A control electrode lead wire, the control electrode lead wire being drawn out from a hole formed in the electrode block to the outside, wherein the hole and the control electrode are provided inside the hole. A semiconductor device having a stepped portion for positioning an O-ring for sealing the lead wire.