JPH06162449A - Wafer for thin-film magnetic head - Google Patents
Wafer for thin-film magnetic headInfo
- Publication number
- JPH06162449A JPH06162449A JP4336572A JP33657292A JPH06162449A JP H06162449 A JPH06162449 A JP H06162449A JP 4336572 A JP4336572 A JP 4336572A JP 33657292 A JP33657292 A JP 33657292A JP H06162449 A JPH06162449 A JP H06162449A
- Authority
- JP
- Japan
- Prior art keywords
- film magnetic
- thin film
- wafer
- thin
- magnetic conversion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Magnetic Heads (AREA)
- Hall/Mr Elements (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、薄膜磁気ヘッド用ウエ
ハに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film magnetic head wafer.
【０００２】[0002]
【従来の技術】薄膜磁気ヘッドは、よく知られているよ
うに、ＩＣ製造テクノロジーと同様のプロセスに従って
製造される。スライダとなるウエハの表面にフォトリソ
グラフィ高精度パターン形成技術やスパッタ薄膜形成技
術等を用いて、磁性膜及びコイル膜等よりなる薄膜磁気
回路を集積する。薄膜磁気変換素子は行及び列を作るよ
うにウエハ基板の一面側に格子状に配列される。集積工
程が終了した後、ウエハ基板は薄膜磁気変換素子の各列
毎に切断される。各分離片は複数の薄膜磁気変換素子を
含む集合体であり、ウエハ基板が薄膜磁気変換素子の各
列毎に切断されたとき、切断面の一つが空気ベアリング
面（以下ＡＢＳ面と称する）に対応する。この後、集合
体は治具に装着され、レール溝加工やＡＢＳ面の研磨加
工等が施される。かかる研磨技術は例えば特開平１ー１
５３２６５号、同１５３２６４号公報等で知られてい
る。ＡＢＳ面研磨加工の後、磁気特性を向上させるた
め、ＡＢＳ面に現れる薄膜磁気変換素子のポール部に加
工が施されることがある。2. Description of the Related Art Thin film magnetic heads are manufactured according to processes similar to IC manufacturing technology, as is well known. A thin film magnetic circuit including a magnetic film and a coil film is integrated on the surface of a wafer to be a slider by using a photolithography high precision pattern forming technique, a sputtered thin film forming technique and the like. The thin film magnetic conversion elements are arranged in a grid on one side of the wafer substrate so as to form rows and columns. After the integration process is completed, the wafer substrate is cut into rows of thin film magnetic conversion elements. Each separation piece is an assembly including a plurality of thin film magnetic conversion elements, and when the wafer substrate is cut into rows of thin film magnetic conversion elements, one of the cut surfaces becomes an air bearing surface (hereinafter referred to as ABS surface). Correspond. After this, the aggregate is mounted on a jig and subjected to rail groove processing, ABS surface polishing, and the like. Such a polishing technique is disclosed, for example, in JP-A-1-1-1
It is known from Japanese Patent Nos. 53265 and 153264. After polishing the ABS surface, the pole portion of the thin film magnetic conversion element appearing on the ABS surface may be processed in order to improve the magnetic characteristics.
【０００３】ＡＢＳ面の研磨やポール部の加工に当たっ
ては、集合体上の１つまたは２つの薄膜磁気ヘッド素子
が基準マーカとして用いられ、研磨量及び加工量等が検
出され制御される。In polishing the ABS surface and processing the pole portion, one or two thin film magnetic head elements on the assembly are used as reference markers, and the polishing amount and the processing amount are detected and controlled.
【０００４】[0004]
【発明が解決しようとする課題】上述したように、従来
は、ＡＢＳ面の研磨やポール部の加工に当たって、集合
体上の１つまたは２つの薄膜磁気ヘッド素子を基準マー
カとして用いていたから、基準マーカとして用いられる
１つまたは２つの薄膜磁気ヘッド素子は、製品化するこ
となく、捨てなければならなかった。このため、歩留低
下及びコストアップを招いていた。As described above, in the prior art, one or two thin film magnetic head elements on the assembly were used as the reference marker for polishing the ABS surface and processing the pole portion. Therefore, the reference marker is used. One or two thin film magnetic head elements used as the above had to be discarded without being commercialized. Therefore, the yield is reduced and the cost is increased.
【０００５】そこで、本発明は上述する従来の問題点を
解決し、薄膜磁気変換素子の利用効率が高く、歩留の向
上及びコストダウンに有効なウエハを提供することであ
る。Therefore, the present invention is to solve the above-mentioned conventional problems, and to provide a wafer which has a high utilization efficiency of the thin film magnetic conversion element and is effective in improving the yield and reducing the cost.
【０００６】[0006]
【課題を解決するための手段】上述した課題解決のた
め、本発明は、ウエハ基板と、薄膜磁気変換素子と、基
準マーカとを含む薄膜磁気ヘッド用ウエハであって、前
記薄膜磁気変換素子は、その複数個による行及び列を作
るように前記ウエハ基板の一面側に格子状に配列されて
おり、前記基準マーカは、前記ウエハ基板の前記一面側
において前記薄膜磁気変換素子の行と平行となる方向に
設けられ、前記ウエハ基板が前記薄膜磁気変換素子の各
列毎に切断されたとき切断面に現れる。In order to solve the above problems, the present invention provides a wafer for a thin film magnetic head including a wafer substrate, a thin film magnetic conversion element, and a reference marker, wherein the thin film magnetic conversion element is , A plurality of rows and columns are arranged in a grid on one surface side of the wafer substrate, and the reference markers are parallel to the rows of the thin film magnetic conversion elements on the one surface side of the wafer substrate. Which are provided in different directions, and appear on the cut surface when the wafer substrate is cut into each row of the thin film magnetic conversion elements.
【０００７】[0007]
【作用】薄膜磁気変換素子はその複数個による行及び列
を作るようにウエハ基板の一面側に格子状に配列されて
おり、基準マーカはウエハ基板の一面側において薄膜磁
気変換素子の行と平行となる方向に設けられ、ウエハ基
板が薄膜磁気変換素子の各列毎に切断されたとき切断面
に現れるから、基準マーカを基準にして、ＡＢＳ面の研
磨及びポール部の加工等を行うことができる。これらの
工程において、薄膜磁気変換素子を犠牲にする必要がな
い。従って、薄膜磁気ヘッド素子の利用効率が高く、歩
留の向上及びコストダウンに有効なウエハが得られる。The thin film magnetic conversion elements are arranged in a grid pattern on one side of the wafer substrate so that rows and columns are formed by a plurality of the thin film magnetic conversion elements, and the reference markers are parallel to the rows of the thin film magnetic conversion elements on the one side of the wafer substrate. Since the wafer substrate appears in the cut surface when it is cut into each row of the thin film magnetic conversion elements, it is possible to polish the ABS surface and process the pole portion with the reference marker as a reference. it can. In these steps, it is not necessary to sacrifice the thin film magnetic conversion element. Therefore, the utilization efficiency of the thin film magnetic head element is high, and a wafer effective in improving the yield and reducing the cost can be obtained.
【０００８】[0008]
【実施例】図１は本発明に係る薄膜磁気ヘッド用ウエハ
をモデル化して示す斜視図、図２は図１に示された薄膜
磁気ヘッド用ウエハの断面図である。１はウエハ基板、
２は薄膜磁気変換素子、３は基準マーカである。1 is a perspective view showing a model of a thin film magnetic head wafer according to the present invention, and FIG. 2 is a sectional view of the thin film magnetic head wafer shown in FIG. 1 is a wafer substrate,
Reference numeral 2 is a thin film magnetic conversion element, and 3 is a reference marker.
【０００９】ウエハ基板１は周知のセラミック構造体で
構成されている。薄膜磁気変換素子２はその複数個によ
る行及び列を作るようにウエハ基板１の一面側に格子状
に配列されている。図示では、１０行８列の格子状に配
列されており、１列当たり１０個の薄膜磁気変換素子２
を含んでいる。基準マーカ３は、図１に示されるごと
く、ウエハ基板１の一面側において薄膜磁気変換素子２
の行と平行となる方向に設けられており、図２に示され
るように、ウエハ基板１が切断線Ｘ１〜Ｘ８線上で薄膜
磁気変換素子２の各列毎に切断されたとき切断面に現れ
る。基準マーカ３は望ましくは薄膜磁気変換素子２の群
の両端側に配置する。The wafer substrate 1 is composed of a well-known ceramic structure. The thin film magnetic conversion elements 2 are arranged in a grid pattern on one surface side of the wafer substrate 1 so that a plurality of rows and columns are formed. In the drawing, they are arranged in a grid pattern of 10 rows and 8 columns, and 10 thin film magnetic conversion elements 2 per column are arranged.
Is included. As shown in FIG. 1, the reference marker 3 is formed on the one surface side of the wafer substrate 1 by the thin-film magnetic conversion element 2.
2, the wafer substrate 1 appears on the cut surface when the wafer substrate 1 is cut for each column of the thin film magnetic conversion elements 2 on the cutting lines X1 to X8, as shown in FIG. . The reference markers 3 are preferably arranged at both ends of the group of thin film magnetic conversion elements 2.
【００１０】上述のように、薄膜磁気変換素子２は、そ
の複数個による行及び列を作るようにウエハ基板１の一
面側に格子状に配列されており、基準マーカ３はウエハ
基板１の一面側において薄膜磁気変換素子２の行と平行
となる方向に設けられ、ウエハ基板１が切断線Ｘ１〜Ｘ
８において薄膜磁気変換素子２の各列毎に切断されたと
き、切断面に現れるから、基準マーカ３を基準にして、
ＡＢＳ面の研磨やポール部の加工等を行うことができ
る。これらの工程において、薄膜磁気変換素子２を犠牲
にする必要がない。従って、薄膜磁気変換素子２の利用
効率が高く、歩留の向上及びコストダウンに有効なウエ
ハが得られる。As described above, the thin film magnetic conversion elements 2 are arranged in a grid on one surface side of the wafer substrate 1 so as to form a plurality of rows and columns, and the reference markers 3 are arranged on one surface of the wafer substrate 1. On the side, the wafer substrate 1 is provided in a direction parallel to the rows of the thin film magnetic conversion elements 2, and the wafer substrate 1 has cutting lines X1 to X.
When each line of the thin film magnetic conversion element 2 is cut in 8, it appears on the cut surface. Therefore, with reference to the reference marker 3,
The ABS surface can be polished and the pole portion can be processed. In these steps, it is not necessary to sacrifice the thin film magnetic conversion element 2. Therefore, the utilization efficiency of the thin film magnetic conversion element 2 is high, and a wafer effective in improving the yield and reducing the cost can be obtained.
【００１１】図３は基準マーカ３の具体例を示す斜視図
である。基準マーカ３はウエハ基板１の一面に平行にな
る部分３１と、垂直になる部分３２と含んでいる。この
ような構造であると、直交するＸ軸及びＹ軸において位
置合わせを行うことができる。図３では基準マーカ３は
間隔を隔てて２個併設されている。基準マーカ３は例え
ばパーマロイ等によって形成できる。FIG. 3 is a perspective view showing a specific example of the reference marker 3. The reference marker 3 includes a portion 31 that is parallel to one surface of the wafer substrate 1 and a portion 32 that is vertical. With such a structure, alignment can be performed in the X axis and the Y axis which are orthogonal to each other. In FIG. 3, two reference markers 3 are provided side by side with an interval. The reference marker 3 can be formed of, for example, permalloy or the like.
【００１２】薄膜磁気変換素子２は、誘導型素子の他、
磁気抵抗効果を用いたＭＲ素子であってもよい。これら
を単独で備える場合に限らず、これらの素子の組み合わ
せを含むこともできる。図４は誘導型素子によって構成
された薄膜磁気変換素子の１例を示す拡大断面図であ
る。図４において、スライダとなるウエハ基板１は、Ａ
ｌ2Ｏ3−ＴｉＣ等で構成される基体部分１１０に、Ａｌ
2Ｏ3等でなる絶縁膜１２０をスパッタ等の手段によって
付着させた構造となっていて、薄膜磁気変換素子２は絶
縁膜１２０の上に設けられている。薄膜磁気変換素子２
はＩＣ製造テクノロジと同様のプロセスにしたがって形
成された薄膜素子である。２１はパーマロイ等でなる下
部磁性膜、２２はＡｌ2Ｏ3等で形成されたギャップ膜、
２３はパーマロイ等でなる上部磁性膜、２４はコイル
膜、２５１〜２５３はフォトレジスト等で形成された膜
間絶縁膜、２６はＡｌ2Ｏ3等の保護膜である。The thin-film magnetic conversion element 2 includes an induction type element,
An MR element using the magnetoresistive effect may be used. The present invention is not limited to the case where these are provided alone, but may include a combination of these elements. FIG. 4 is an enlarged cross-sectional view showing an example of a thin film magnetic conversion element composed of an induction type element. In FIG. 4, the wafer substrate 1 serving as the slider is A
Al on the base portion 110 made of l 2 O 3 —TiC or the like.
The structure is such that an insulating film 120 made of 2 O 3 or the like is attached by means such as sputtering, and the thin film magnetic conversion element 2 is provided on the insulating film 120. Thin film magnetic conversion element 2
Is a thin film element formed according to a process similar to IC manufacturing technology. Reference numeral 21 is a lower magnetic film made of permalloy or the like, 22 is a gap film made of Al 2 O 3 or the like,
Reference numeral 23 is an upper magnetic film made of permalloy or the like, 24 is a coil film, 251 to 253 are inter-film insulating films formed of photoresist or the like, and 26 is a protective film such as Al 2 O 3 .
【００１３】下部磁性膜２１及び上部磁性膜２３は、先
端部がギャップ膜２２を介して対向する下部ポール部Ｐ
１及び上部ポール部Ｐ２となっている。下部ポール部Ｐ
１及び上部ポール部Ｐ２の後方にはヨーク部２１１、２
３１が連続しており、ヨーク部２１１、２３１は後方の
結合部において磁気回路を完成するように互いに結合さ
れている。コイル膜２４は結合部のまわりを渦巻状にま
わるように形成されている。The lower magnetic film 21 and the upper magnetic film 23 have lower pole portions P whose front ends face each other with the gap film 22 interposed therebetween.
1 and the upper pole portion P2. Lower pole part P
1 and the rear side of the upper pole portion P2, the yoke portions 211, 2
31 are continuous, and the yoke portions 211 and 231 are coupled to each other at the rear coupling portion so as to complete a magnetic circuit. The coil film 24 is formed so as to spiral around the joint.
【００１４】上記構成の誘導型薄膜磁気変換素子におい
て、磁気特性を向上させる手段として、図５及び図６に
示すように、ポール部Ｐ１またはＰ２に凹部４または５
を設けることがある。このような凹部４または５の位置
及び深さ等を決める基準として基準マーカ３を用いるこ
とができる。凹部４または５の加工は、図１において、
切断線Ｘ１〜Ｘ８に沿ってウエハ基板１を切断して列毎
の集合体を取り出した後に行う。In the inductive type thin film magnetic conversion element having the above structure, as means for improving the magnetic characteristics, as shown in FIGS. 5 and 6, the recessed portion 4 or 5 is formed in the pole portion P1 or P2.
May be provided. The reference marker 3 can be used as a reference for determining the position and depth of the recess 4 or 5. The recess 4 or 5 is processed as shown in FIG.
This is performed after the wafer substrate 1 is cut along the cutting lines X1 to X8 to take out the aggregate for each column.
【００１５】[0015]
【発明の効果】以上述べたように、本発明に係る薄膜磁
気ヘッド用ウエハにおいて、薄膜磁気変換素子はその複
数個による行及び列を作るようにウエハ基板の一面側に
格子状に配列されており、基準マーカはウエハ基板の一
面側において薄膜磁気変換素子の行と平行となる方向に
設けられ、ウエハ基板が薄膜磁気変換素子の各列毎に切
断されたとき切断面に現れるから、基準マーカを基準に
して、ＡＢＳ面の研磨、ポール部の加工等を行うことが
でき、これらの工程のために、薄膜磁気変換素子を犠牲
にする必要がない。このため、薄膜磁気ヘッド素子の利
用効率が高く、歩留の向上及びコストダウンに有効な薄
膜磁気ヘッド用ウエハを提供できる。As described above, in the wafer for a thin film magnetic head according to the present invention, the thin film magnetic conversion elements are arranged in a lattice on one surface side of the wafer substrate so as to form rows and columns by a plurality of the thin film magnetic conversion elements. The reference marker is provided on one side of the wafer substrate in a direction parallel to the row of the thin film magnetic conversion elements, and appears on the cut surface when the wafer substrate is cut into each column of the thin film magnetic conversion elements. Based on the above, the ABS surface can be polished, the pole portion can be processed, etc., and it is not necessary to sacrifice the thin film magnetic conversion element for these steps. Therefore, it is possible to provide a thin film magnetic head wafer that has high utilization efficiency of the thin film magnetic head element and is effective in improving yield and reducing cost.
【図１】本発明に係る薄膜磁気ヘッド用ウエハをモデル
化して示す斜視図である。FIG. 1 is a perspective view showing a model of a thin film magnetic head wafer according to the present invention.
【図２】図１のＸ１〜Ｘ８線に沿って切断された端面図
を示す図である。2 is a diagram showing an end view taken along line X1 to X8 of FIG. 1. FIG.
【図３】本発明に係る薄膜磁気ヘッド用ウエハに備えら
れた基準マーカの１例を示す斜視図である。FIG. 3 is a perspective view showing an example of a reference marker provided on the thin film magnetic head wafer according to the present invention.
【図４】本発明に係る薄膜磁気ヘッド用ウエハに備えら
れた薄膜磁気変換素子の１例を示す断面図である。FIG. 4 is a cross-sectional view showing an example of a thin film magnetic conversion element provided on a thin film magnetic head wafer according to the present invention.
【図５】図４に示した薄膜磁気変換素子を備えるウエハ
から切断された集合体の端面拡大図である。5 is an enlarged end view of an assembly cut from a wafer including the thin film magnetic conversion element shown in FIG.
【図６】図５のＡ６ーＡ６線上における断面図である。6 is a cross-sectional view taken along the line A6-A6 of FIG.
１ ウエハ ２ 薄膜磁気変換素子 ３ 基準片 1 Wafer 2 Thin film magnetic conversion element 3 Reference piece
Claims (2)
準マーカとを含む薄膜磁気ヘッド用ウエハであって、 前記薄膜磁気変換素子は、その複数個による行及び列を
作るように前記ウエハ基板の一面側に格子状に配列され
ており、 前記基準マーカは、前記ウエハ基板の前記一面側におい
て前記薄膜磁気変換素子の行と平行となる方向に設けら
れ、前記ウエハ基板が前記薄膜磁気変換素子の各列毎に
切断されたとき切断面に現れる薄膜磁気ヘッド用ウエ
ハ。1. A wafer for a thin-film magnetic head including a wafer substrate, a thin-film magnetic conversion element, and a reference marker, wherein the thin-film magnetic conversion element has a plurality of rows and columns. Are arranged in a lattice on one surface side, and the reference markers are provided on the one surface side of the wafer substrate in a direction parallel to the rows of the thin film magnetic conversion elements, and the wafer substrate is the thin film magnetic conversion elements. Wafer for a thin-film magnetic head that appears on the cut surface when it is cut into rows.
記一面に平行になる部分と、垂直になる部分と含む請求
項１に記載の薄膜磁気ヘッド用ウエハ。2. The thin film magnetic head wafer according to claim 1, wherein the reference marker includes a portion that is parallel to the one surface of the wafer substrate and a portion that is perpendicular to the one surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33657292A JP3374927B2 (en) | 1992-11-24 | 1992-11-24 | Wafer for thin film magnetic head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33657292A JP3374927B2 (en) | 1992-11-24 | 1992-11-24 | Wafer for thin film magnetic head |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06162449A true JPH06162449A (en) | 1994-06-10 |
| JP3374927B2 JP3374927B2 (en) | 2003-02-10 |
Family
ID=18300532
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33657292A Expired - Fee Related JP3374927B2 (en) | 1992-11-24 | 1992-11-24 | Wafer for thin film magnetic head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3374927B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6212761B1 (en) | 1997-10-28 | 2001-04-10 | Tdk Corporation | Method for manufacturing thin-film magnetic head |
-
1992
- 1992-11-24 JP JP33657292A patent/JP3374927B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6212761B1 (en) | 1997-10-28 | 2001-04-10 | Tdk Corporation | Method for manufacturing thin-film magnetic head |
| US6678939B2 (en) | 1997-10-28 | 2004-01-20 | Tdk Corporation | System for manufacturing a thin film magnetic head |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3374927B2 (en) | 2003-02-10 |
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