JPH06160175A - Infrared ray detecting element - Google Patents
Infrared ray detecting elementInfo
- Publication number
- JPH06160175A JPH06160175A JP31463192A JP31463192A JPH06160175A JP H06160175 A JPH06160175 A JP H06160175A JP 31463192 A JP31463192 A JP 31463192A JP 31463192 A JP31463192 A JP 31463192A JP H06160175 A JPH06160175 A JP H06160175A
- Authority
- JP
- Japan
- Prior art keywords
- infrared
- infrared detecting
- section
- thin film
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、温度による抵抗の変化
を利用して赤外線を検出する赤外線検出素子に関するも
のである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an infrared detecting element for detecting infrared rays by utilizing a change in resistance with temperature.
【０００２】[0002]
【従来の技術】例えば、本件出願人らは、特開昭６４−
８４１７９号公報等で、複数の赤外線検出素子を用い、
各々の赤外線検出素子の出力を比較することにより、信
頼性高く人体を検出できる人体検出装置を既に提案して
いる。上記従来の人体検出装置の全体構成のブロック図
を図７に示す。図７において、検知領域からの赤外線を
光学系２１により集光し、集光された赤外線を複数の赤
外線検出部Ａ〜Ｄから成る赤外線検出素子２２を用いて
受光し、複数の赤外線検出部Ａ〜Ｄの各出力を増幅部２
３により独立に増幅している。2. Description of the Related Art For example, the applicant of the present invention has disclosed in Japanese Patent Laid-Open No.
84179, etc., using a plurality of infrared detection elements,
We have already proposed a human body detection device that can detect a human body with high reliability by comparing the output of each infrared detection element. FIG. 7 shows a block diagram of the overall configuration of the conventional human body detection device. In FIG. 7, infrared rays from the detection area are collected by the optical system 21, and the collected infrared rays are received by the infrared detection element 22 composed of a plurality of infrared detection sections A to D. Each output of ~ D is amplified 2
It is amplified independently by 3.
【０００３】そして、更に、増幅部２３からの出力を信
号処理部２４により人体検出に適した信号に変換し、判
断部２５によりピーク値と出力時刻とを検出し、これら
を相互に比較して人体の有無を判定し、この判定結果を
出力部２６から出力するというものである。上記人体検
出装置における赤外線検出素子２２としては、図８に示
すような焦電素子が考えられる。図示するように、４個
の赤外線検出部Ａ〜Ｄを有し、各赤外線検出部Ａ〜Ｄに
対し環境温度変化を相殺する目的で温度補償部２０が接
続されている。Further, the output from the amplifier 23 is converted into a signal suitable for human body detection by the signal processor 24, the peak value and the output time are detected by the judgment unit 25, and these are compared with each other. The presence / absence of a human body is determined, and the determination result is output from the output unit 26. As the infrared detection element 22 in the human body detection device, a pyroelectric element as shown in FIG. 8 can be considered. As shown in the figure, it has four infrared ray detecting sections A to D, and the temperature compensating section 20 is connected to each of the infrared ray detecting sections A to D for the purpose of offsetting the environmental temperature change.
【０００４】図９は焦電素子の内部回路を示すものであ
り、各赤外線検出部Ａ〜Ｄに対応してＦＥＴ・Ｑ1 〜Ｑ
4 が設けられ、ＦＥＴ・Ｑ1 〜Ｑ4 のゲート・ドレイン
間には上記赤外線検出部Ａ〜Ｄと温度補償部２０との直
列回路が接続されている。そして、各ＦＥＴ・Ｑ1 〜Ｑ
4 のソース端子から各出力Ａ〜Ｄが出力されるようにな
っている。[0004] FIG. 9 shows an internal circuit of the pyroelectric element, FET · Q 1 ~Q corresponding to each infrared detector A~D
4 is provided, and a series circuit of the infrared detecting units A to D and the temperature compensating unit 20 is connected between the gates and drains of the FETs Q 1 to Q 4 . Then, each FET · Q 1 ~Q
The outputs A to D are output from the four source terminals.
【０００５】[0005]
【発明が解決しようとする課題】かかる従来例におい
て、赤外線検出部Ａ〜Ｄの感度を得るためには、温度補
償部２０に赤外線が入射しないように遮光する必要があ
る。そのため、一般的には、温度補償部２０を赤外線が
入射しない位置、すなわち、赤外線検出素子２２の周辺
部に設けることになる。In such a conventional example, in order to obtain the sensitivity of the infrared ray detecting sections A to D, it is necessary to shield the temperature compensating section 20 so that infrared rays do not enter. Therefore, in general, the temperature compensating section 20 is provided at a position where infrared rays do not enter, that is, at the peripheral portion of the infrared detecting element 22.
【０００６】また、焦電素子の場合、クロストークの問
題もあり、温度補償部２０を赤外線検出部Ａ〜Ｄに接近
させることはできない。以上の理由により、素子サイズ
が大きくなるという問題があった。さらに、４出力を独
立に取り出すためには、４個のＦＥＴ・Ｑ1 〜Ｑ4 がパ
ッケージ内に必要となり、サイズが大きく、高価となる
という問題があった。Further, in the case of a pyroelectric element, the temperature compensating section 20 cannot be brought close to the infrared detecting sections A to D due to the problem of crosstalk. For the above reason, there is a problem that the element size becomes large. Furthermore, in order to take out the four outputs independently, four FETs Q 1 to Q 4 are required in the package, which causes a problem that the size is large and the cost is high.
【０００７】本発明は上述の点に鑑みて提供したもので
あって、小型で安価に構成することを目的とした赤外線
検出素子を提供するものである。The present invention has been made in view of the above points, and provides an infrared detecting element intended to be compact and inexpensive.
【０００８】[0008]
【課題を解決するための手段】本発明は、半導体基板の
一面上に絶縁膜を介して赤外線検出部及び温度補償部を
備え、赤外線検出部の下方の下部の基板がエッチングに
より取り除かれた構造であり、赤外線検出部より独立し
た信号出力端子より信号を出力するようにした赤外線検
出素子において、上記赤外線検出部を、薄膜抵抗体と、
この上下面に設けた電極と、上側の電極の上面に設けた
赤外線吸収膜とで構成し、上記温度補償部を、薄膜抵抗
体と、この上下面に設けた電極とで構成したものであ
る。According to the present invention, an infrared detecting section and a temperature compensating section are provided on one surface of a semiconductor substrate via an insulating film, and a lower substrate below the infrared detecting section is removed by etching. In the infrared detecting element that outputs a signal from a signal output terminal independent of the infrared detecting section, the infrared detecting section, a thin film resistor,
It is composed of electrodes provided on the upper and lower surfaces and an infrared absorbing film provided on the upper surface of the upper electrode, and the temperature compensation section is composed of a thin film resistor and electrodes provided on the upper and lower surfaces. .
【０００９】また、請求項２においては、複数の赤外線
検出部と、１つの温度補償部と、上記赤外線検出部と温
度補償部とを切り換え接続する手段とを設けたものであ
る。Further, according to the present invention, a plurality of infrared detecting sections, one temperature compensating section, and means for switching and connecting the infrared detecting section and the temperature compensating section are provided.
【００１０】[0010]
【作用】而して、温度補償部は、赤外線検出部と同性能
の薄膜抵抗体からなるが、表面には赤外線吸収膜が設け
られていないために、入射した赤外線の大部分は上側の
電極の表面で反射してしまい、更に、温度補償部の下方
には半導体基板があり、赤外線が吸収されても半導体基
板を通して熱が逃げてしまうため、薄膜抵抗体の温度が
上昇しない。従って、温度補償部は赤外線の入射する位
置に設けることができ、赤外線検出素子を小型にするこ
とができる。そのため、安価に構成できるものである。The temperature compensator is composed of a thin film resistor having the same performance as the infrared detector, but since the infrared absorbing film is not provided on the surface, most of the incident infrared rays are on the upper electrode. The temperature of the thin film resistor does not rise because the light is reflected on the surface of the thin film resistor and the semiconductor substrate is below the temperature compensating portion, and heat is radiated through the semiconductor substrate even if infrared rays are absorbed. Therefore, the temperature compensator can be provided at a position where infrared rays are incident, and the infrared detecting element can be downsized. Therefore, it can be constructed at low cost.
【００１１】また、請求項２においては、複数の赤外線
検出部と、１つの温度補償部と、上記赤外線検出部と温
度補償部とを切り換え接続する手段とを設けたものであ
るから、温度補償部が１つのため、小型化が図れ、ま
た、同一の温度補償部を用いるために、感度のバラツキ
を小さくすることができる。Further, according to the present invention, a plurality of infrared ray detecting sections, one temperature compensating section, and means for switching and connecting the infrared ray detecting section and the temperature compensating section are provided. Since there is only one unit, miniaturization can be achieved, and since the same temperature compensation unit is used, variations in sensitivity can be reduced.
【００１２】[0012]
【実施例】以下、本発明の実施例を図面を参照して説明
する。本発明における赤外線検出素子１０では、図１に
示すように半導体基板１の一面に４つの赤外線検出部Ａ
〜Ｄと、４つの温度補償部８を備え、赤外線検出部Ａ〜
Ｄの下部の基板がエッチングにより取り除かれた構造を
有するものである。Embodiments of the present invention will be described below with reference to the drawings. In the infrared detecting element 10 according to the present invention, as shown in FIG. 1, four infrared detecting parts A are provided on one surface of the semiconductor substrate 1.
To D and four temperature compensating units 8 and infrared detecting unit A to
The substrate below D has a structure removed by etching.
【００１３】図１（ａ）は赤外線検出素子１０の平面図
を示し、図１（ｂ）は、図１（ａ）のＸ−Ｘ断面図を示
している。赤外線検出部Ａ〜Ｄ及び温度補償部８は、膜
厚０．１〜５．０μｍの多結晶シリコン又は非晶質シリ
コンからなる薄膜抵抗体５と、この薄膜抵抗体５の表面
を覆う複数の電極６から成り、赤外線検出部Ａ〜Ｄの表
面には赤外線を吸収する赤外線吸収膜７を設けている。FIG. 1A shows a plan view of the infrared detecting element 10, and FIG. 1B shows a sectional view taken along line XX of FIG. 1A. The infrared detectors A to D and the temperature compensator 8 include a thin film resistor 5 made of polycrystalline silicon or amorphous silicon having a film thickness of 0.1 to 5.0 μm, and a plurality of thin film resistors 5 covering the surface of the thin film resistor 5. An infrared absorption film 7 that absorbs infrared rays is provided on the surfaces of the infrared detectors A to D, which are composed of the electrodes 6.
【００１４】尚、３は半導体基板１の上面に形成されて
いる熱絶縁薄膜で、４は薄膜抵抗体５の下側に設けた電
極である。電極４，６は薄膜抵抗体５の抵抗値を計測す
るものであり、一般に半導体プロセスで作製できるよう
にアルミやクロムなどを用いている。赤外線検出部Ａ〜
Ｄと半導体基板１とは熱分離空間２にて熱的に分離して
おり、これにより、赤外線検出部Ａ〜Ｄの感度を良好に
している。また、赤外線検出部Ａ〜Ｄと半導体基板１と
を熱分離するために、赤外線検出部Ａ〜Ｄの下部の基板
をエッチング等により取り除いている。Reference numeral 3 is a heat insulating thin film formed on the upper surface of the semiconductor substrate 1, and reference numeral 4 is an electrode provided below the thin film resistor 5. The electrodes 4 and 6 measure the resistance value of the thin film resistor 5, and are generally made of aluminum or chromium so that they can be manufactured by a semiconductor process. Infrared detector A ~
The D and the semiconductor substrate 1 are thermally separated in the heat separation space 2, and thus the sensitivity of the infrared detection units A to D is improved. Further, in order to thermally separate the infrared detecting parts A to D from the semiconductor substrate 1, the substrate under the infrared detecting parts A to D is removed by etching or the like.
【００１５】赤外線検出部Ａ〜Ｄは、シリコン酸化膜あ
るいは、シリコン窒化膜あるいはそれらの多層膜から成
る上記熱絶縁薄膜３上に形成されている。なお、半導体
基板１には、赤外線検出部Ａ〜Ｄと共に、検出された信
号を増幅したり、雑音を除去したり、適当な処理を行う
信号処理回路を設けておくようにしておいても良い。The infrared detectors A to D are formed on the heat insulating thin film 3 made of a silicon oxide film, a silicon nitride film or a multilayer film thereof. The semiconductor substrate 1 may be provided with a signal processing circuit that amplifies the detected signal, removes noise, and performs appropriate processing together with the infrared detection units A to D. .
【００１６】図２は赤外線検出素子１０の内部回路図を
示し、この図２及び図１に示すように、各赤外線検出部
Ａ〜Ｄは、赤外線検出素子１０の四隅に設けた温度補償
部８と配線１１により接続され、温度補償部８の一端は
アース側のＧＮＤ端子１２に接続されている。また、赤
外線検出部Ａ〜Ｄの一端は中央側で共通接続されて、電
源が印加されるＶｄｄ端子１３に接続されている。更
に、各赤外線検出部Ａ〜Ｄと温度補償部８との接続点よ
り、信号出力端子１４〜１７が延出形成されている。FIG. 2 shows an internal circuit diagram of the infrared detecting element 10. As shown in FIGS. 2 and 1, each infrared detecting section A to D has a temperature compensating section 8 provided at four corners of the infrared detecting element 10. Is connected by a wiring 11 and one end of the temperature compensator 8 is connected to the GND terminal 12 on the ground side. Further, one ends of the infrared ray detecting sections A to D are commonly connected on the center side and connected to the Vdd terminal 13 to which power is applied. Further, signal output terminals 14 to 17 are formed so as to extend from the connection points between the infrared detection units A to D and the temperature compensation unit 8.
【００１７】ここで、入射した赤外線は、ＳｉＯ2 等か
ら成る赤外線吸収膜７によって吸収され、薄膜抵抗体５
の温度を変化させる。この温度変化によって変わる薄膜
抵抗体５の抵抗値を電極４，６によって検出する。Ｓｉ
基板、つまり半導体基板１の表面にはＳｉＯ2 あるいは
Ｓｉ3 Ｎ4 等からなる熱絶縁薄膜３が形成されており、
この熱絶縁薄膜３上に赤外線吸収膜７と電極４，６と薄
膜抵抗体５からなる赤外線検出部Ａ〜Ｄ、及び電極４，
６と薄膜抵抗体５からなる温度補償部８が設けられてい
る。Here, the incident infrared rays are absorbed by the infrared absorption film 7 made of SiO 2 or the like, and the thin film resistor 5
Change the temperature of. The resistance value of the thin film resistor 5 which changes due to this temperature change is detected by the electrodes 4 and 6. Si
A heat insulating thin film 3 made of SiO 2 or Si 3 N 4 is formed on the surface of the substrate, that is, the semiconductor substrate 1,
On the heat insulating thin film 3, an infrared ray absorbing film 7, electrodes 4, 6 and infrared ray detecting portions A to D including a thin film resistor 5, and electrodes 4, 4.
A temperature compensator 8 including a thin film resistor 6 and a thin film resistor 5 is provided.
【００１８】赤外線吸収膜７は、例えば、ＳｉＯ2 のよ
うな半導体プロセスにて形成できる物質を用いているた
め、簡単に形成できる。また、半導体基板１と赤外線検
出部Ａ〜Ｄとの熱分離をするために、赤外線検出部Ａ〜
Ｄの下方の半導体基板１をエッチングにより除去した熱
分離空間２を設けている。The infrared absorbing film 7 can be easily formed because it uses a substance such as SiO 2 which can be formed by a semiconductor process. In addition, in order to thermally separate the semiconductor substrate 1 and the infrared ray detecting sections A to D, the infrared ray detecting sections A to
A thermal separation space 2 is provided by removing the semiconductor substrate 1 below D by etching.
【００１９】温度補償部８は、赤外線検出部Ａ〜Ｄと同
性能の薄膜抵抗体５からなるが、表面には赤外線吸収膜
７が設けられておらず、入射した赤外線の大部分は電極
６の表面で反射してしまう。更に、温度補償部８の下方
には半導体基板１があり、赤外線が吸収されても半導体
基板１を通して熱が逃げてしまうため、薄膜抵抗体５の
温度が上昇しない。The temperature compensator 8 comprises a thin-film resistor 5 having the same performance as the infrared detectors A to D, but the infrared absorbing film 7 is not provided on the surface thereof, and most of the incident infrared rays are received by the electrode 6. Will be reflected on the surface of. Further, since the semiconductor substrate 1 is located below the temperature compensator 8, heat will escape through the semiconductor substrate 1 even if infrared rays are absorbed, so that the temperature of the thin film resistor 5 does not rise.
【００２０】従って、温度補償部８は赤外線の入射する
位置に設けることができ、赤外線検出素子１０を小型に
することができる。そのため、安価に構成できる。 （実施例２）実施例２を図３に示す。本実施例では、温
度補償部８を赤外線検出素子１０の中央部分に配置した
ものであり、これにより更に小型化することが可能とな
るものである。Therefore, the temperature compensating section 8 can be provided at a position where infrared rays are incident, and the infrared detecting element 10 can be miniaturized. Therefore, it can be constructed at low cost. (Embodiment 2) Embodiment 2 is shown in FIG. In this embodiment, the temperature compensator 8 is arranged in the central portion of the infrared detecting element 10, which allows further miniaturization.
【００２１】（実施例３）図４は実施例３を示し、温度
補償部８を１つにし、各赤外線検出部Ａ〜Ｄと切り換え
ながら出力を取り出すようにしたものである。赤外線検
出素子１０には先の実施例と同様の構成の赤外線検出部
Ａ〜Ｄが４つ形成されており、赤外線検出素子１０の中
央には１つだけ温度補償部８が形成されている。この温
度補償部８の構成も先の実施例と同様に形成してある。(Third Embodiment) FIG. 4 shows a third embodiment in which one temperature compensating unit 8 is provided and an output is taken out while switching between the infrared detecting units A to D. The infrared detecting element 10 is provided with four infrared detecting sections A to D having the same structure as the previous embodiment, and only one temperature compensating section 8 is formed at the center of the infrared detecting element 10. The structure of the temperature compensator 8 is also formed in the same manner as in the previous embodiment.
【００２２】図５は、本実施例にかかる赤外線検出素子
１０の接続を示す回路図である。本実施例では、図５に
示すように、各赤外線検出部Ａ〜Ｄと１つの温度補償部
８とを直列に接続し、各接続点に信号出力端子１４〜１
７を設けている。赤外線検出部Ａの出力を取り出す場合
は、信号出力端子１４と１７を短絡し、信号出力端子Ａ
の出力を読めば良い。FIG. 5 is a circuit diagram showing the connection of the infrared detecting element 10 according to this embodiment. In this embodiment, as shown in FIG. 5, each infrared detecting section A to D and one temperature compensating section 8 are connected in series, and the signal output terminals 14 to 1 are connected to the respective connection points.
7 is provided. When taking out the output of the infrared detecting section A, the signal output terminals 14 and 17 are short-circuited and the signal output terminal A
Just read the output of.
【００２３】また、赤外線検出部Ｂの出力を取り出す場
合は、Ｖｄｄ端子１３と信号出力端子１４、信号出力端
子１５と１７を短絡し、信号出力端子１５の出力を読め
ば良い。更に、赤外線検出部Ｃの出力を取り出す場合
は、Ｖｄｄ端子１３と信号出力端子１５、信号出力端子
１６と１７を短絡し、信号出力端子１６の出力を読めば
良い。When the output of the infrared detecting section B is taken out, the Vdd terminal 13 and the signal output terminal 14 and the signal output terminals 15 and 17 are short-circuited and the output of the signal output terminal 15 may be read. Further, when the output of the infrared detecting section C is taken out, the Vdd terminal 13 and the signal output terminal 15 and the signal output terminals 16 and 17 may be short-circuited and the output of the signal output terminal 16 may be read.
【００２４】また、赤外線検出部Ｄの出力を取り出す場
合は、Ｖｄｄ端子１３と信号出力端子１６を短絡し、信
号出力端子１７の出力を読めば良い。以上のように構成
することで、４個の赤外線検出部Ａ〜Ｄの出力を独立に
得ることができる。 （実施例４）図６に実施例４を示す。本実施例では、４
個の赤外線検出部Ａ〜Ｄを並列に配し、各赤外線検出部
Ａ〜Ｄと温度補償部８は外部で直列に接続するようにし
ている。When the output of the infrared detector D is taken out, the Vdd terminal 13 and the signal output terminal 16 are short-circuited and the output of the signal output terminal 17 may be read. With the above configuration, it is possible to independently obtain the outputs of the four infrared detectors A to D. (Fourth Embodiment) FIG. 6 shows a fourth embodiment. In this embodiment, 4
Infrared detectors A to D are arranged in parallel, and the infrared detectors A to D and the temperature compensator 8 are externally connected in series.
【００２５】赤外線検出部Ａの出力を取り出す場合は、
信号出力端子１４と端子１８を接続し、信号出力端子１
４の出力を読めば良い。赤外線検出部Ｂの出力を取り出
す場合は、信号出力端子１５と端子１８を接続し、信号
出力端子１５の出力を読めば良い。赤外線検出部Ｃの出
力を取り出す場合は、信号出力端子１６と端子１８を接
続し、信号出力端子１６の出力を読めば良い。When the output of the infrared detector A is taken out,
Connect the signal output terminal 14 and the terminal 18, and connect the signal output terminal 1
You can read the output of 4. When the output of the infrared detecting section B is taken out, the signal output terminal 15 and the terminal 18 may be connected and the output of the signal output terminal 15 may be read. When the output of the infrared detecting section C is taken out, the signal output terminal 16 and the terminal 18 may be connected and the output of the signal output terminal 16 may be read.
【００２６】赤外線検出部Ｄの出力を取り出す場合は、
信号出力端子１７と端子１８を接続し、信号出力端子１
７の出力を読めば良い。尚、上記各実施例において、絶
縁膜（熱絶縁薄膜３）の材料、構成、電極４，６の構造
（櫛型かサンドイッチ型）には、影響されないものであ
る。また、赤外線検出部Ａ〜Ｄの数は、４つに限定され
るものではない。When the output of the infrared detector D is taken out,
Signal output terminal 17 and terminal 18 are connected, and signal output terminal 1
You can read the output of 7. In each of the above embodiments, the material and structure of the insulating film (heat insulating thin film 3) and the structure of the electrodes 4 and 6 (comb type or sandwich type) are not affected. Further, the number of infrared ray detectors A to D is not limited to four.
【００２７】[0027]
【発明の効果】本発明は上述のように、半導体基板の一
面上に絶縁膜を介して赤外線検出部及び温度補償部を備
え、赤外線検出部の下方の下部の基板がエッチングによ
り取り除かれた構造であり、赤外線検出部より独立した
信号出力端子より信号を出力するようにした赤外線検出
素子において、上記赤外線検出部を、薄膜抵抗体と、こ
の上下面に設けた電極と、上側の電極の上面に設けた赤
外線吸収膜とで構成し、上記温度補償部を、薄膜抵抗体
と、この上下面に設けた電極とで構成したものであるか
ら、温度補償部は、赤外線検出部と同性能の薄膜抵抗体
からなるが、表面には赤外線吸収膜が設けられていない
ために、入射した赤外線の大部分は上側の電極の表面で
反射してしまい、更に、温度補償部の下方には半導体基
板があり、赤外線が吸収されても半導体基板を通して熱
が逃げてしまうため、薄膜抵抗体の温度が上昇しない。
従って、温度補償部は赤外線の入射する位置に設けるこ
とができ、赤外線検出素子を小型にすることができる。
そのため、安価に構成できる効果を奏するものである。As described above, the present invention has a structure in which the infrared detecting section and the temperature compensating section are provided on one surface of the semiconductor substrate via the insulating film, and the lower substrate below the infrared detecting section is removed by etching. In the infrared detecting element which outputs a signal from a signal output terminal independent of the infrared detecting section, the infrared detecting section includes a thin film resistor, electrodes provided on the upper and lower surfaces thereof, and an upper surface of the upper electrode. The infrared compensating film provided in the above, and the temperature compensating unit is composed of a thin film resistor and electrodes provided on the upper and lower surfaces thereof, so that the temperature compensating unit has the same performance as the infrared detecting unit. Although it consists of a thin film resistor, since most of the incident infrared rays are reflected on the surface of the upper electrode because there is no infrared absorption film on the surface, the semiconductor substrate is below the temperature compensator. There is infrared The heat escapes through the absorbed even semiconductor substrate, the temperature of the thin film resistor is not increased.
Therefore, the temperature compensator can be provided at a position where infrared rays are incident, and the infrared detecting element can be downsized.
Therefore, there is an effect that it can be constructed at low cost.
【００２８】また、請求項２においては、複数の赤外線
検出部と、１つの温度補償部と、上記赤外線検出部と温
度補償部とを切り換え接続する手段とを設けたものであ
るから、温度補償部が１つのため、小型化が図れ、ま
た、同一の温度補償部を用いるために、感度のバラツキ
を小さくすることができる。Further, according to the present invention, a plurality of infrared ray detecting sections, one temperature compensating section, and means for switching and connecting the infrared ray detecting section and the temperature compensating section are provided. Since there is only one unit, miniaturization can be achieved, and since the same temperature compensation unit is used, variations in sensitivity can be reduced.
【図面の簡単な説明】[Brief description of drawings]
【図１】（ａ）は本発明の実施例の赤外線検出素子の平
面図である。（ｂ）は本発明の実施例の図１（ａ）のＸ
−Ｘ線断面図である。FIG. 1A is a plan view of an infrared detection element according to an embodiment of the present invention. (B) is X of FIG. 1 (a) of the embodiment of the present invention
It is a X-ray sectional view.
【図２】同上の赤外線検出素子の内部回路図である。FIG. 2 is an internal circuit diagram of the infrared detection element of the above.
【図３】同上の他の実施例の赤外線検出素子の平面図で
ある。FIG. 3 is a plan view of an infrared detection element of another embodiment of the above.
【図４】（ａ）は同上の実施例３の赤外線検出素子の平
面図である。（ｂ）は図４（ａ）のＸ−Ｘ線断面図であ
る。FIG. 4A is a plan view of an infrared detecting element of Example 3 of the above. FIG. 4B is a sectional view taken along line XX of FIG.
【図５】同上の実施例３の赤外線検出部と温度補償部と
の接続を示す回路図である。FIG. 5 is a circuit diagram showing a connection between an infrared detecting section and a temperature compensating section according to the third embodiment.
【図６】同上の実施例４の赤外線検出部と温度補償部と
の接続を示す回路図である。FIG. 6 is a circuit diagram showing a connection between an infrared detecting section and a temperature compensating section of Example 4 of the above.
【図７】従来例の人体検出装置のブロック図である。FIG. 7 is a block diagram of a human body detection device of a conventional example.
【図８】従来例の赤外線検出素子の平面図である。FIG. 8 is a plan view of an infrared detection element of a conventional example.
【図９】従来例の赤外線検出素子の内部回路図である。FIG. 9 is an internal circuit diagram of a conventional infrared detection element.
１ 半導体基板 ２ 熱分離空間 ３ 熱絶縁薄膜 ４ 電極 ５ 薄膜抵抗体 ６ 電極 ７ 赤外線吸収膜 ８ 温度補償部 １０ 赤外線検出素子 １４ 信号出力端子 １５ 信号出力端子 １６ 信号出力端子 １７ 信号出力端子 Ａ 赤外線検出部 Ｂ 赤外線検出部 Ｃ 赤外線検出部 Ｄ 赤外線検出部 1 Semiconductor Substrate 2 Thermal Separation Space 3 Thermal Insulation Thin Film 4 Electrode 5 Thin Film Resistor 6 Electrode 7 Infrared Absorption Film 8 Temperature Compensation Section 10 Infrared Detector 14 Signal Output Terminal 15 Signal Output Terminal 16 Signal Output Terminal 17 Signal Output Terminal A Infrared Detection Part B Infrared detector C Infrared detector D Infrared detector
Claims (2)
外線検出部及び温度補償部を備え、赤外線検出部の下方
の下部の基板がエッチングにより取り除かれた構造であ
り、赤外線検出部より独立した信号出力端子より信号を
出力するようにした赤外線検出素子において、上記赤外
線検出部を、薄膜抵抗体と、この上下面に設けた電極
と、上側の電極の上面に設けた赤外線吸収膜とで構成
し、上記温度補償部を、薄膜抵抗体と、この上下面に設
けた電極とで構成したことを特徴とする赤外線検出素
子。1. A structure in which an infrared detecting section and a temperature compensating section are provided on one surface of a semiconductor substrate via an insulating film, and a lower substrate below the infrared detecting section is removed by etching, which is independent of the infrared detecting section. In the infrared detecting element that outputs a signal from the signal output terminal, the infrared detecting section is composed of a thin film resistor, electrodes provided on the upper and lower surfaces thereof, and an infrared absorbing film provided on the upper surface of the upper electrode. An infrared detecting element, characterized in that the temperature compensating section is composed of a thin film resistor and electrodes provided on the upper and lower surfaces thereof.
部と、上記赤外線検出部と温度補償部とを切り換え接続
する手段とを設けたことを特徴とする請求項１記載の赤
外線検出素子。2. An infrared detecting element according to claim 1, further comprising a plurality of infrared detecting sections, one temperature compensating section, and means for switching and connecting the infrared detecting section and the temperature compensating section. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31463192A JPH06160175A (en) | 1992-11-25 | 1992-11-25 | Infrared ray detecting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31463192A JPH06160175A (en) | 1992-11-25 | 1992-11-25 | Infrared ray detecting element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06160175A true JPH06160175A (en) | 1994-06-07 |
Family
ID=18055645
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31463192A Pending JPH06160175A (en) | 1992-11-25 | 1992-11-25 | Infrared ray detecting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06160175A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2006043384A1 (en) * | 2004-10-18 | 2008-05-22 | 松下電器産業株式会社 | Infrared sensor and infrared sensor array |
| JP2009264877A (en) * | 2008-04-24 | 2009-11-12 | Asahi Kasei Electronics Co Ltd | Infrared sensor, and method for manufacturing the same |
| US9528879B2 (en) | 2013-01-21 | 2016-12-27 | Panasonic Intellectual Property Management Co., Ltd. | Infrared detection element, infrared detector, and infrared type gas sensor |
-
1992
- 1992-11-25 JP JP31463192A patent/JPH06160175A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2006043384A1 (en) * | 2004-10-18 | 2008-05-22 | 松下電器産業株式会社 | Infrared sensor and infrared sensor array |
| JP2009264877A (en) * | 2008-04-24 | 2009-11-12 | Asahi Kasei Electronics Co Ltd | Infrared sensor, and method for manufacturing the same |
| US9528879B2 (en) | 2013-01-21 | 2016-12-27 | Panasonic Intellectual Property Management Co., Ltd. | Infrared detection element, infrared detector, and infrared type gas sensor |
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