JPH0614529B2 - Semiconductor cooling system - Google Patents
Semiconductor cooling systemInfo
- Publication number
- JPH0614529B2 JPH0614529B2 JP60287689A JP28768985A JPH0614529B2 JP H0614529 B2 JPH0614529 B2 JP H0614529B2 JP 60287689 A JP60287689 A JP 60287689A JP 28768985 A JP28768985 A JP 28768985A JP H0614529 B2 JPH0614529 B2 JP H0614529B2
- Authority
- JP
- Japan
- Prior art keywords
- heat dissipation
- heat
- semiconductor
- cooling device
- cross
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、電力用半導体素子等の発熱体を空冷方式で冷
却する半導体の冷却装置に関する。The present invention relates to a semiconductor cooling device for cooling a heating element such as a power semiconductor element by an air cooling method.
第３図は従来のこの種冷却装置の一例を示す側面図、第
４図は第３図の正面図である。(1)はアルミの押出材で
成形された冷却装置の放熱フインである。(2)は放熱フ
イン(1)の上面部を構成し、半導体素子を取付けるため
の放熱フイン平面図、(3)は放熱フイン平面部(2)に直角
に設けられた複数個の平面よりなる断面くし形形状の放
熱板である。(50)は放熱板(3)の両側に設けられた放熱
フイン側面板である。(30)は放熱フイン平面部(2)の上
面中央部に設けられた電力用半導体素子であり、(4)は
電力用半導体素子(30)を放熱フイン平面部(2)に固定す
るための取付ねじ、(5)は接続電線、(6)は接続電線(5)
を電力用半導体素子(30)に固定するための取付ねじであ
る。(7)は放熱フイン(1)を支持する取付パネルで、
(8)，(9)はそれぞれの放熱フイン側面板(50)を四隅で取
付パネル(7)に固定する取付足及び取付ねじである。FIG. 3 is a side view showing an example of a conventional cooling device of this type, and FIG. 4 is a front view of FIG. (1) is the heat dissipation fin of the cooling device formed of aluminum extruded material. (2) is a top view of the heat dissipation fin (1) and is a plan view of the heat dissipation fin for mounting the semiconductor element. It is a heat sink with a comb-shaped cross section. Reference numeral (50) is a heat dissipation fin side plate provided on both sides of the heat dissipation plate (3). (30) is a power semiconductor element provided at the center of the upper surface of the heat dissipation fin flat surface (2), and (4) is for fixing the power semiconductor element (30) to the heat dissipation fin flat surface (2). Mounting screw, (5) connecting wire, (6) connecting wire (5)
Is a mounting screw for fixing the to the power semiconductor element (30). (7) is a mounting panel that supports the heat dissipation fin (1),
(8) and (9) are mounting feet and mounting screws for fixing the respective heat dissipation fin side plates (50) to the mounting panel (7) at the four corners.
〔発明が解決しようとする問題点〕 上記のように構成した従来の冷却装置によれば、放熱フ
インの放熱特性が充分ではなく、このため冷却装置を小
型化することも困難で、機械的強度の面でも堅固ではな
かつた。[Problems to be Solved by the Invention] According to the conventional cooling device configured as described above, the heat dissipation characteristics of the heat dissipation fins are not sufficient, and therefore it is difficult to reduce the size of the cooling device and the mechanical strength is reduced. It wasn't solid in terms of.
本発明は、上記のような問題点を解決するためになされ
たもので、良好な放熱特性を有するとともに小型化可能
な半導体の冷却装置を得ることを目的とする。The present invention has been made to solve the above problems, and an object of the present invention is to obtain a semiconductor cooling device which has good heat dissipation characteristics and can be miniaturized.
［問題点を解決するための手段］ 本発明に係る半導体の冷却装置は、一方の面のほぼ中央
部に半導体が配置され、他方の面に複数の放熱フィンが
立設された放熱フィン平面部を備え、半導体の冷却を放
熱フィンを介して冷媒により冷却する半導体の冷却装置
において、放熱フィンを断面格子形状に形成し、その放
熱フィンの板厚を、断面格子形状によって形成される冷
媒の流路の流通方向の中央部を厚く、両端部に向って薄
くなるようにしたものである。[Means for Solving the Problems] In a semiconductor cooling device according to the present invention, a semiconductor is arranged substantially in the center of one surface, and a plurality of heat dissipation fins are provided upright on the other surface. In a semiconductor cooling device that includes a semiconductor cooling device that cools a semiconductor with a coolant through a radiation fin, the radiation fin is formed in a cross-sectional grid shape, and the plate thickness of the radiation fin is defined by the flow of the refrigerant formed by the cross-section grid shape. The center of the passage in the flow direction is thick and the thickness is reduced toward both ends.
［作用］ 放熱フィンの断面格子形状内の流路を流れる冷媒は、断
面格子形状を構成する側壁により熱伝達されて温度が上
昇するので、冷媒を介して半導体の熱が気中に放熱され
る。冷媒の流路の側壁を構成する放熱フィンの肉厚は、
流路の流通方向の中央部が厚く両端部が薄いので、その
表面積が、均一な肉圧の側壁の場合の表面積より増加し
ているため、同一外形寸法の放熱フィンの場合に比べて
放熱フィンの放熱面積が大きくなり、放熱量が増加す
る。[Operation] Since the refrigerant flowing in the flow passage in the cross-sectional lattice shape of the heat radiation fins is heat-transferred by the side wall forming the cross-sectional lattice shape to raise the temperature, the heat of the semiconductor is radiated into the air through the refrigerant. . The thickness of the radiating fins that make up the side walls of the coolant channel is
Since the central part of the flow path in the flow direction is thick and both ends are thin, the surface area is larger than the surface area in the case of side walls with uniform wall thickness. The heat radiation area is increased, and the heat radiation amount is increased.
第１図は本発明の実施例を示す正面図、第２図は第１図
のＡ−Ａ断面図である。なお第３図、第４図と同じ機能
の部分には同じ符号を付し説明を省略する。(10)は本実
施例に係る放熱フインで、(100)は放熱フイン(10)内部
に設けられた断面格子形形状の放熱板である。放熱板(1
00)は第３図で示したくし形形状の複数個の放熱板(3)に
対して、さらに直角方向〔放熱フイン平面部(2)と平行
方向〕に複数個の平面を設け、各平面部同志を結合固定
したものである。FIG. 1 is a front view showing an embodiment of the present invention, and FIG. 2 is a sectional view taken along the line AA of FIG. The parts having the same functions as those in FIGS. 3 and 4 are designated by the same reference numerals, and the description thereof will be omitted. Reference numeral (10) is a heat radiating fin according to this embodiment, and reference numeral (100) is a heat radiating plate having a lattice-shaped cross section provided inside the heat radiating fin (10). Heat sink (1
00) is a plurality of comb-shaped heat sinks (3) shown in FIG. It is a fixed combination of comrades.
なお、この放熱フイン(10)の放熱板(100)の板厚は、中
央部(100a)を厚くし、端部(100b)を薄く形成している。
すなわち、中央部(100a)の板厚をt2とし、端部(100b)の
板厚をt1とすれば、t2＞t1の関係が成立する。このよう
に放熱板(100)の中央部(100a)と端部(100b)の板厚を変
えたのは、発熱体である半導体素子が、通常は放熱フイ
ン(10)の放熱フイン平面部(2)の中央上面部に取付けら
れ、半導体素子(30)から放熱フイン(10)各部への熱伝導
量を考えると、中央部(100a)の熱伝導量のほうが端部(1
00b)より大きいことになる。すなわち、半導体素子(30)
からの熱伝導率は、同一材料からなる放熱フインにおい
ては熱伝導経路の断面積を大きくすればするほど大きく
なり、このため熱伝導量に合せて断面積を変えれば、材
料の有効利用がはかれるからである。The thickness of the heat dissipation plate (100) of the heat dissipation fin (10) is such that the central part (100a) is thick and the end parts (100b) are thin.
That is, the central portion of the plate thickness of (100a) and t 2, if the end portion of the plate thickness of (100b) and t 1, t 2> relationship t 1 is satisfied. In this way, the thickness of the central part (100a) and the end part (100b) of the heat dissipation plate (100) is changed because the semiconductor element which is the heat generating element is usually the heat dissipation fin flat surface part of the heat dissipation fin (10) ( 2) It is attached to the upper surface of the center, and considering the amount of heat conduction from the semiconductor element (30) to each part of the heat dissipation fin (10), the amount of heat conduction in the center (100a) is the end (1).
00b) will be larger. That is, the semiconductor element (30)
The larger the cross-sectional area of the heat-conducting path is, the larger the heat conductivity from the heat-dissipating fins made of the same material becomes. Therefore, if the cross-sectional area is changed according to the amount of heat conduction, the material can be effectively used. Because.
以上のように放熱フイン(10)の放熱板(100)を断面格子
形形状にすることにより、放熱板(100)の放熱面積が増
加し、このため同一外形寸法に対しての放熱量が増加す
る。このことは放熱板(100)の中央部(100a)、端部(100
b)の厚さを変えたこととあわせて、放熱フイン(10)の放
熱特性を向上させ、また小型化、軽量化が達成できるこ
とを意味する。As described above, the heat dissipation plate (100) of the heat dissipation fin (10) has a lattice-shaped cross section, so that the heat dissipation area of the heat dissipation plate (100) is increased. To do. This is because the heat sink (100) has a central part (100a) and an end part (100a).
In addition to changing the thickness of b), it means that the heat dissipation characteristics of the heat dissipation fin (10) can be improved, and the size and weight can be reduced.
上記のように構成した本発明の作用を説明すれば次の通
りである。電力用半導体素子(30)で発生した熱は、放熱
フイン平面部(2)の中央部から格子形状をなす放熱板(10
0)の下方向及び両側方向に伝導され、放熱板(100)の表
面から外界に放出される。The operation of the present invention configured as described above will be described below. The heat generated in the power semiconductor element (30) is generated by the heat dissipation plate (10
0) Conducted in the downward direction and both side directions, and emitted from the surface of the heat sink (100) to the outside.
上記のように構成した本発明の半導体の冷却装置によれ
ば、断面格子形状の側壁を形成する放熱フィンの肉厚
を、冷媒の流路の流通方向の中央部を厚く、両端部を薄
くしたので、表面積が増加して同一外形寸法の放熱フィ
ンの場合に比べて放熱特性を向上させることができる。According to the semiconductor cooling device of the present invention configured as described above, the thickness of the radiating fins forming the side wall of the cross-sectional lattice shape is made thicker at the central portion in the flow direction of the refrigerant and thinner at both ends. Therefore, the surface area is increased and the heat dissipation characteristics can be improved as compared with the case of the heat dissipation fins having the same outer dimensions.
第１図は、本発明の実施例を示す正面図、第２図は第１
図のＡ−Ａ断面図、第３図、第４図はそれぞれ従来の冷
却装置の一例を示す側面図及び正面図である。 (10)……放熱フイン、(100)……放熱板、(100a)……中
央部、(100b)……端部 なお各図中、同一符号は同一又は相当部分を示す。FIG. 1 is a front view showing an embodiment of the present invention, and FIG. 2 is a first view.
FIG. 3 is a side view and a front view showing an example of a conventional cooling device, respectively. (10) ...... Heat dissipation fin, (100) ...... Heat dissipation plate, (100a) ...... Central part, (100b) ...... End part In each figure, the same reference numerals indicate the same or corresponding parts.
Claims (1)
れ、他方の面に複数の放熱フィンが立設された放熱フィ
ン平面部を備え、該半導体の冷却を上記放熱フィンを介
して冷媒により冷却する半導体の冷却装置において、 上記放熱フィンを断面格子形状に形成し、その放熱フィ
ンの板厚を、上記断面格子形状によって形成される冷媒
の流路の流通方向の中央部を厚く、両端部に向って薄く
なるようにしたことを特徴とする半導体の冷却装置。1. A radiating fin flat portion in which a semiconductor is arranged substantially in the center of one surface and a plurality of radiating fins are provided upright on the other surface, and cooling of the semiconductor is performed via the radiating fins. In a semiconductor cooling device that cools by means of the above, the radiation fins are formed in a cross-sectional lattice shape, and the plate thickness of the radiation fins is set so that the central portion in the flow direction of the refrigerant formed by the cross-sectional lattice shape is thick, A semiconductor cooling device characterized in that it is made thinner toward the inner part.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60287689A JPH0614529B2 (en) | 1985-12-23 | 1985-12-23 | Semiconductor cooling system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60287689A JPH0614529B2 (en) | 1985-12-23 | 1985-12-23 | Semiconductor cooling system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62147750A JPS62147750A (en) | 1987-07-01 |
| JPH0614529B2 true JPH0614529B2 (en) | 1994-02-23 |
Family
ID=17720454
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60287689A Expired - Lifetime JPH0614529B2 (en) | 1985-12-23 | 1985-12-23 | Semiconductor cooling system |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0614529B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4485835B2 (en) * | 2004-04-09 | 2010-06-23 | 古河スカイ株式会社 | Radiator |
| JP6572678B2 (en) * | 2015-08-21 | 2019-09-11 | 工機ホールディングス株式会社 | Engine and engine working machine |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS548469A (en) * | 1977-06-21 | 1979-01-22 | Nec Corp | Heat sink for stud type semiconductors |
| JPS59200195A (en) * | 1983-04-27 | 1984-11-13 | Mitsubishi Alum Co Ltd | Manufacture of radiator fin |
-
1985
- 1985-12-23 JP JP60287689A patent/JPH0614529B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62147750A (en) | 1987-07-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |