JPH06141538A - Voltage inverter circuit fitted with high-efficiency driver - Google Patents

Voltage inverter circuit fitted with high-efficiency driver

Info

Publication number
JPH06141538A
JPH06141538A JP4305877A JP30587792A JPH06141538A JP H06141538 A JPH06141538 A JP H06141538A JP 4305877 A JP4305877 A JP 4305877A JP 30587792 A JP30587792 A JP 30587792A JP H06141538 A JPH06141538 A JP H06141538A
Authority
JP
Japan
Prior art keywords
voltage
circuit
group
gate
power supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4305877A
Other languages
Japanese (ja)
Other versions
JP3006320B2 (en
Inventor
Tetsuhisa Yamamura
哲久 山村
Kotaro Okada
耕太郎 岡田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Japan Ltd
Original Assignee
Nippon Motorola Ltd
Motorola Japan Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Motorola Ltd, Motorola Japan Ltd filed Critical Nippon Motorola Ltd
Priority to JP4305877A priority Critical patent/JP3006320B2/en
Priority to US08/139,489 priority patent/US5338988A/en
Publication of JPH06141538A publication Critical patent/JPH06141538A/en
Application granted granted Critical
Publication of JP3006320B2 publication Critical patent/JP3006320B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06Modifications for ensuring a fully conducting state
    • H03K17/063Modifications for ensuring a fully conducting state in field-effect transistor switches
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00Conversion of dc power input into dc power output
    • H02M3/02Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K2217/00Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0036Means reducing energy consumption

Abstract

PURPOSE:To suppress power consumption due to the loss of gate capacity storage charges and increase power inverter efficiency of a voltage inverter circuit by connecting the grounding side of a predriver in the voltage inverter circuit to the input power source, not to the ground potential, thus converting the circuit into a power recovery circuit. CONSTITUTION:Gate elements 10 and 11 (group No. 1) are connected in series to an input power source line 1 and grounding line 3 in No. 1 booster circuit 19, and gate elements 8 and 9 (group No. 2) are connected in series to the input power source line 1 and a power source output line 14. A voltage booster capacitor 12 is connected to the gate elements 10 and 11 (group No. 1), and between the gate elements 8 and 9 (group No. 2). An output capacitor 13 is connected to a power source output line 14 and grounding line 3. The gate elements 8, 9, 10, and 11 are controlled through a control circuit 16 according to a clock signal 18. Pre-drivers 4 and 5 control the gate elements 8 and 9, being connected so that they operate between the output line 2 and input power source line 1 of No. 2 booster circuit 17.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、電源回路として利用さ
れる電圧変換回路に関し、さらに詳しくは比較的少ない
消費電力でゲート素子を駆動できる高効率ドライバーを
有する電圧変換回路に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a voltage conversion circuit used as a power supply circuit, and more particularly to a voltage conversion circuit having a high efficiency driver capable of driving a gate element with relatively low power consumption.

【0002】[0002]

【従来の技術および解決しようとする課題】電子機器、
特に民生用機器に用いられている電源回路は、電池を電
力供給源としたものが多い。電池が供給する電圧と電子
機器内で要求される電圧とは必ずしも一致せず、したが
って供給電圧を変換、すなわち昇圧して電子機器に供給
する必要性が生じる。このような昇圧回路として、従来
からアップ・コンバータと呼ばれる昇圧回路が使用され
ている。アップコンバータ内部では、電源回路に要求さ
れる低損失性能を満たすため、NMOSトランジスタの
ゲート電圧を高くしオン抵抗値を下げる目的で出力電圧
よりも高い電圧を供給するプリドライバーが用意されて
いる。
2. Description of the Related Art Electronic devices,
In particular, many power circuits used in consumer appliances use batteries as a power supply source. The voltage supplied by the battery and the voltage required in the electronic device do not necessarily match, so there is a need to convert the supply voltage, that is, boost the voltage and supply it to the electronic device. As such a booster circuit, a booster circuit called an up converter has been conventionally used. In order to satisfy the low loss performance required for the power supply circuit, a pre-driver for supplying a voltage higher than the output voltage is prepared inside the up-converter in order to increase the gate voltage of the NMOS transistor and lower the ON resistance value.

【0003】しかしながら、NMOSトランジスタにお
いては、ターンオン時にゲートに蓄積されターンオフ時
に接地側へと放電され失われる電荷量がゲート電圧が高
くなるにしたがい増大する。したがって、プリドライバ
ー回路での消費電力が電圧の上昇に従い増大し、その結
果として全体の電力変換効率を悪化させてしまう。
However, in the NMOS transistor, the amount of charges accumulated in the gate at the time of turn-on and discharged to the ground side at the time of turn-off and lost increases as the gate voltage increases. Therefore, the power consumption in the pre-driver circuit increases as the voltage increases, and as a result, the overall power conversion efficiency deteriorates.

【0004】そこで、本発明の目的は、従来の問題点を
改良するものであり、回路での消費電力を増大すること
なく低損失性能を満たすことができる電圧変換回路を提
供することにある。
Therefore, an object of the present invention is to improve the conventional problems and to provide a voltage conversion circuit which can satisfy the low loss performance without increasing the power consumption in the circuit.

【0005】[0005]

【課題を解決するための手段】上記目的を達成するため
に、本発明に従った電圧変換回路は、プリドライバーの
接地側を入力電源に接続して電力回収経路とすることに
より、従来は動作電流が接地側へ流れていたことによる
電力消費をおさえ全体の電力変換効率を改善することを
特徴とするものである。
In order to achieve the above object, the voltage conversion circuit according to the present invention is conventionally operated by connecting the ground side of the pre-driver to an input power source to form a power recovery path. It is characterized by suppressing the power consumption due to the current flowing to the ground side and improving the overall power conversion efficiency.

【0006】[0006]

【実施例】以下に、本発明の実施例について図面を参照
して説明する。
Embodiments of the present invention will be described below with reference to the drawings.

【0007】図1に、本発明の一実施例に従った電圧変
換回路20を示す。従来のプリドライバーは、昇圧回路
17の出力電源ライン2と接地電位との間に接続されて
いたが、本発明のプリドライバー4、5は昇圧回路17
の出力電源ライン2と入力電源ライン1との間で動作す
るように接続されている。プリドライバー4、5はま
た、NMOSトランジスタ8、9の各ゲートを制御する
ように接続される。制御回路16からの制御信号が、N
MOSトランジスタ10、11の各ゲートおよび各プリ
ドライバー4、5に接続される。NMOSトランジスタ
8とNMOSトランジスタ9との結合点にコンデンサ1
2の正電極が接続され、NMOSトランジスタ10とN
MOSトランジスタ11との結合点にコンデンサ12の
負電極が接続される。NMOSトランジスタ9とNMO
Sトランジスタ10との結合点に入力電源ライン1が接
続される。NMOSトランジスタ11のソースが接地
3、NMOSトランジスタ8のドレインがコンデンサ1
3の正電極と出力電源ライン14に接続される。クロッ
ク18が制御回路16に接続され、NMOSトランジス
タ8〜11をオン/オフさせる。
FIG. 1 shows a voltage conversion circuit 20 according to an embodiment of the present invention. Although the conventional pre-driver is connected between the output power supply line 2 of the booster circuit 17 and the ground potential, the pre-drivers 4 and 5 of the present invention are connected to the booster circuit 17.
The output power supply line 2 and the input power supply line 1 are connected to operate. The pre-drivers 4, 5 are also connected to control the gates of the NMOS transistors 8, 9. The control signal from the control circuit 16 is N
The gates of the MOS transistors 10 and 11 and the pre-drivers 4 and 5 are connected. A capacitor 1 is provided at the connection point between the NMOS transistor 8 and the NMOS transistor 9.
The positive electrode of 2 is connected to the NMOS transistor 10 and N
The negative electrode of the capacitor 12 is connected to the connection point with the MOS transistor 11. NMOS transistor 9 and NMO
The input power supply line 1 is connected to the connection point with the S transistor 10. The source of the NMOS transistor 11 is ground 3, and the drain of the NMOS transistor 8 is the capacitor 1.
3 is connected to the positive electrode and the output power supply line 14. A clock 18 is connected to the control circuit 16 to turn on / off the NMOS transistors 8-11.

【0008】NMOSトランジスタ8、9がターンオフ
するときには、これらのゲート電圧は接地電位ではなく
入力電源電圧とされるので、ゲート容量に蓄積された電
荷は接地側に失われることなく入力電源ライン1を通し
て回収することができる。
When the NMOS transistors 8 and 9 are turned off, their gate voltage is not the ground potential but the input power supply voltage. Therefore, the charge accumulated in the gate capacitance is not lost to the ground side and passes through the input power supply line 1. Can be collected.

【0009】図2は、高効率ドライバーを得る他の実施
例である。プリドライバー4、5、6が昇圧回路17の
出力電源ライン2と各々NMOSトランジスタ8、9、
10のソースとの間で動作するように接続される。NM
OSトランジスタ8とNMOSトランジスタ9との結合
点にコンデンサ12の正電極が接続され、NMOSトラ
ンジスタ10とNMOSトランジスタ11との結合点に
コンデンサ12の負電極が接続される。このように接続
したため、トランジスタ8、10はオフ時にゲート・ソ
ース間がショートされるため、従来ターンオフ時に生じ
ていたソース側の寄生振動を防止できるという効果があ
る。
FIG. 2 shows another embodiment for obtaining a high efficiency driver. The pre-drivers 4, 5 and 6 are connected to the output power line 2 of the booster circuit 17 and the NMOS transistors 8 and 9, respectively.
Operatively connected to 10 sources. NM
The positive electrode of the capacitor 12 is connected to the connection point between the OS transistor 8 and the NMOS transistor 9, and the negative electrode of the capacitor 12 is connected to the connection point between the NMOS transistor 10 and the NMOS transistor 11. Since the transistors 8 and 10 are connected in this manner, the gate and the source are short-circuited when the transistors 8 and 10 are turned off, so that there is an effect that parasitic oscillation on the source side, which conventionally occurs at the time of turn-off, can be prevented.

【0010】NMOSトランジスタ9とNMOSトラン
ジスタ10との結合点に入力電源ライン1が接続され
る。NMOSトランジスタ11のソースが接地3、NM
OSトランジスタ8のドレインがコンデンサ13の正電
極と出力電源ライン14に接続される。
The input power supply line 1 is connected to a connection point between the NMOS transistor 9 and the NMOS transistor 10. The source of the NMOS transistor 11 is ground 3, NM
The drain of the OS transistor 8 is connected to the positive electrode of the capacitor 13 and the output power supply line 14.

【0011】制御回路16が、クロック信号18に応じ
て、NMOSトランジスタ8〜11をオン/オフさせ
る。NMOSトランジスタ8、9は、ゲートが各々ソー
スに接続されることでオフし同時にNMOSトランジス
タ8、9のゲート容量に蓄積された電荷が接地側に失わ
れることなく入力電源ライン1を通して回収される。
The control circuit 16 turns on / off the NMOS transistors 8 to 11 according to the clock signal 18. The NMOS transistors 8 and 9 are turned off when their gates are connected to their sources, and at the same time, the charges accumulated in the gate capacitances of the NMOS transistors 8 and 9 are recovered through the input power supply line 1 without being lost to the ground side.

【0012】以上のように、本発明にしたがった実施例
によれば、NMOSトランジスタ8、9のゲート容量に
蓄積された電荷を回収することができ、プリドライバー
回路での消費電力を増大させることなく電源回路の低損
失性能を満たす事ができる。
As described above, according to the embodiment of the present invention, the charges accumulated in the gate capacitances of the NMOS transistors 8 and 9 can be recovered, and the power consumption in the pre-driver circuit can be increased. Without it, the low loss performance of the power supply circuit can be satisfied.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例に従った電圧変換回路の概略
図である。
FIG. 1 is a schematic diagram of a voltage conversion circuit according to an embodiment of the present invention.

【図2】本発明の他の実施例に従った電圧変換回路の概
略図である。
FIG. 2 is a schematic diagram of a voltage conversion circuit according to another embodiment of the present invention.

【符号の説明】[Explanation of symbols]

1 入力電源ライン 2 第2の昇圧回路の出力ライン 3 接地ライン 4〜7 プリドライバー 8〜11 NMOSトランジスタ 12〜13 コンデンサ 14 電源出力ライン 16 制御回路 17 昇圧回路 18 クロック 1 Input Power Supply Line 2 Output Line of Second Booster Circuit 3 Ground Line 4-7 Pre-driver 8-11 NMOS Transistor 12-13 Capacitor 14 Power Supply Output Line 16 Control Circuit 17 Booster Circuit 18 Clock

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 クロック信号(18)に同期して電源電
圧を数倍電圧に昇圧して出力する第1昇圧回路(1
9)、および前記第1昇圧回路の出力電圧(14)より
高い電圧(2)を発生させ第1昇圧回路に供給する第2
昇圧回路(17)から成る電圧変換回路(20)であっ
て:第1の昇圧回路(19)が、 電源電圧(1)と接地電位(3)との間に直列接続され
た第1群の2つのゲート素子(10、11)と、 電源電圧(1)と出力電圧(4)との間に直列接続され
た第2群の2つのゲート素子(8、9)と、 第1群のゲート素子間と第2群のゲート素子間との間に
接続された電圧押上げ用のコンデンサー(12)と、 出力電圧(14)と接地電位(3)との間に接続された
出力用のコンデンサー(13)と、 クロック信号に応じて前記ゲート素子(8、9、10、
11)を制御する制御回路(16)と、 前記第2昇圧回路の出力電圧(2)と電源電圧(1)と
の間で動作するように接続され、制御回路(16)に応
じて前記第2群のゲート素子(8、9)を駆動するドラ
イバー(4、5)と、 から構成されることを特徴とする、高効率ドライバーを
有する電圧変換回路(20)。
1. A first booster circuit (1) for boosting a power supply voltage to several times and outputting the same in synchronization with a clock signal (18).
9), and a second voltage which is higher than the output voltage (14) of the first booster circuit and is supplied to the first booster circuit.
A voltage conversion circuit (20) comprising a booster circuit (17), wherein: a first booster circuit (19) of a first group connected in series between a power supply voltage (1) and a ground potential (3). Two gate elements (10, 11), two gate elements (8, 9) of the second group connected in series between the power supply voltage (1) and the output voltage (4), and the gate of the first group A voltage boosting capacitor (12) connected between the elements and between the gate elements of the second group, and an output capacitor connected between the output voltage (14) and the ground potential (3). (13) and the gate elements (8, 9, 10,
11) is connected so as to operate between a control circuit (16) for controlling the output voltage (2) of the second boosting circuit and a power supply voltage (1), and the control circuit (16) controls the first voltage depending on the control circuit (16). A voltage conversion circuit (20) having a high-efficiency driver, characterized in that it comprises a driver (4, 5) for driving two groups of gate elements (8, 9).
【請求項2】 クロック信号(18)に同期して電源電
圧を数倍電圧に昇圧して出力する第1昇圧回路(1
9)、および前記第1昇圧回路の出力電圧(14)より
高い電圧(2)を発生させ第1昇圧回路に供給する第2
昇圧回路(17)から成る電圧変換回路(20)であっ
て:第1の昇圧回路(19)が、 電源電圧(1)と接地電位(3)との間に直列接続され
た第1群の2つのゲート素子(10、11)と、 電源電圧(1)と出力電圧(4)との間に直列接続され
た第2群の2つのゲート素子(8、9)と、 第1群のゲート素子間と第2群のゲート素子間との間に
接続された電圧押上げ用のコンデンサー(12)と、 出力電圧(14)と接地電位(3)との間に接続された
出力用のコンデンサー(13)と、 クロック信号に応じて前記すべてのゲート素子(8、
9)を制御する制御回路(16)と、 前記第2昇圧回路の出力電圧(2)と電源電圧(1)と
の間で動作するように接続され、制御回路(16)に応
じて前記第2群の電源側のゲート素子(9)を駆動する
ドライバー(5)と、 前記第2昇圧回路の出力電圧(2)と第2群のゲート素
子間電圧との間で動作するように接続され、制御回路
(16)に応じて前記第2群の出力側のゲート素子
(8)を駆動するドライバー(4)と、 から構成されることを特徴とする、高効率ドライバーを
有する電圧変換回路(20)。
2. A first booster circuit (1) for boosting a power supply voltage to several times and outputting the same in synchronization with a clock signal (18).
9), and a second voltage which is higher than the output voltage (14) of the first booster circuit and is supplied to the first booster circuit.
A voltage conversion circuit (20) comprising a booster circuit (17), wherein: a first booster circuit (19) of a first group connected in series between a power supply voltage (1) and a ground potential (3). Two gate elements (10, 11), two gate elements (8, 9) of the second group connected in series between the power supply voltage (1) and the output voltage (4), and the gate of the first group A voltage boosting capacitor (12) connected between the elements and between the second group gate elements, and an output capacitor connected between the output voltage (14) and the ground potential (3). (13) and all the gate elements (8,
9) is connected to operate between a control circuit (16) for controlling the output voltage (2) of the second booster circuit and a power supply voltage (1). A driver (5) for driving a gate element (9) on the power supply side of the second group, and a driver (5) connected to operate between the output voltage (2) of the second booster circuit and the voltage between the gate elements of the second group. A driver (4) for driving the output side gate element (8) of the second group according to a control circuit (16), and a voltage conversion circuit having a high efficiency driver ( 20).
JP4305877A 1992-10-21 1992-10-21 Voltage conversion circuit having high efficiency driver Expired - Fee Related JP3006320B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP4305877A JP3006320B2 (en) 1992-10-21 1992-10-21 Voltage conversion circuit having high efficiency driver
US08/139,489 US5338988A (en) 1992-10-21 1993-10-20 Voltage converting circuit with low consumption driver

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4305877A JP3006320B2 (en) 1992-10-21 1992-10-21 Voltage conversion circuit having high efficiency driver

Publications (2)

Publication Number Publication Date
JPH06141538A true JPH06141538A (en) 1994-05-20
JP3006320B2 JP3006320B2 (en) 2000-02-07

Family

ID=17950413

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4305877A Expired - Fee Related JP3006320B2 (en) 1992-10-21 1992-10-21 Voltage conversion circuit having high efficiency driver

Country Status (2)

Country Link
US (1) US5338988A (en)
JP (1) JP3006320B2 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5539351A (en) * 1994-11-03 1996-07-23 Gilsdorf; Ben Circuit and method for reducing a gate volage of a transmission gate within a charge pump circuit
JP3566060B2 (en) * 1998-01-29 2004-09-15 富士通株式会社 Semiconductor device
JP2000040369A (en) * 1998-07-23 2000-02-08 Mitsubishi Electric Corp Semiconductor integrated circuit device
US6380769B1 (en) * 2000-05-30 2002-04-30 Semiconductor Components Industries Llc Low voltage output drive circuit
JP3608199B2 (en) * 2001-10-30 2005-01-05 ローム株式会社 IC interface system and IC
GB0202065D0 (en) * 2002-01-30 2002-03-13 Watson Brown Hsm Ltd Mixing
GB2404507B (en) * 2003-07-31 2006-06-21 Zetex Plc A high side switching circuit
US7973570B2 (en) * 2008-12-30 2011-07-05 Freescale Semiconductor, Inc. Sample-and-hold (S/H) circuit
US9246382B2 (en) * 2013-08-08 2016-01-26 Micron Technology, Inc. Charge pump including supply voltage-based control signal level

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3631408A (en) * 1968-09-13 1971-12-28 Hitachi Ltd Condenser memory circuit with regeneration means
US3601624A (en) * 1969-12-22 1971-08-24 North American Rockwell Large scale array driver for bipolar devices
GB1348285A (en) * 1971-07-26 1974-03-13 Integrated Photomatrix Ltd Voltage generator
IT1073440B (en) * 1975-09-22 1985-04-17 Seiko Instr & Electronics VOLTAGE LIFT CIRCUIT MADE IN MOS-FET
DE3130391A1 (en) * 1981-07-31 1983-02-24 Siemens AG, 1000 Berlin und 8000 München MONOLITHICALLY INTEGRATED COMPARATOR CIRCUIT
US4570085A (en) * 1983-01-17 1986-02-11 Commodore Business Machines Inc. Self booting logical AND circuit
US4680488A (en) * 1983-06-15 1987-07-14 Nec Corporation MOSFET-type driving circuit with capacitive bootstrapping for driving a large capacitive load at high speed
US5148056A (en) * 1991-03-27 1992-09-15 Mos Electronics Corp. Output buffer circuit
US5148054A (en) * 1991-08-07 1992-09-15 Unitrode Corporation High accuracy MOSFET-switched sampling circuit
JP2736483B2 (en) * 1992-03-03 1998-04-02 三菱電機株式会社 Voltage generator

Also Published As

Publication number Publication date
US5338988A (en) 1994-08-16
JP3006320B2 (en) 2000-02-07

Similar Documents

Publication Publication Date Title
JP5169170B2 (en) Step-down switching regulator
JP4756138B2 (en) High voltage power switch using low voltage transistors
US10622908B2 (en) Isolated DC-DC converter
US11515785B2 (en) Multi-capacitor bootstrap circuit
US6686729B1 (en) DC/DC switching regulator having reduced switching loss
CN116742920B (en) NMOS power switch tube driving circuit and control method thereof
CN108429445A (en) A kind of soft starting circuit applied to charge pump
JPH06141538A (en) Voltage inverter circuit fitted with high-efficiency driver
CN111969844B (en) Bootstrap charge pump high-voltage power supply generation circuit
US4468576A (en) Inverter circuit having transistors operable in a shallow saturation region for avoiding fluctuation of electrical characteristics
JPS6144414B2 (en)
CN108551252B (en) High-voltage grid driving circuit sharing input capacitance
CN206602454U (en) Make the circuit of rectifying tube soft start, module and its power supply in circuit of synchronous rectification
CN111010164B (en) Output buffer circuit based on GaAs technology
JP4319336B2 (en) MOS switching circuit
CN108336988B (en) Negative voltage driving circuit of MOS switch
JPH05207730A (en) Zero-voltage switching type driving circuit
JPH0430207B2 (en)
TWI543503B (en) Switching circuit
CN212752170U (en) PWM modulation assembly of H-bridge driving circuit
CN114499477B (en) GaN driver with double protection functions
CN107579728B (en) Driving circuit of power field effect transistor adopting charge pump
JP5092924B2 (en) Booster circuit
CN107947539B (en) Switching power supply driving power supply circuit and switching power supply
JP4137364B2 (en) Charge pump circuit

Legal Events

Date Code Title Description
R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees