JPH06135723A - Electric conductive material made of lead-palladium oxide compound having rhombic structure represented by general formula pbpdo2 - Google Patents

Electric conductive material made of lead-palladium oxide compound having rhombic structure represented by general formula pbpdo2

Info

Publication number
JPH06135723A
JPH06135723A JP3307004A JP30700491A JPH06135723A JP H06135723 A JPH06135723 A JP H06135723A JP 3307004 A JP3307004 A JP 3307004A JP 30700491 A JP30700491 A JP 30700491A JP H06135723 A JPH06135723 A JP H06135723A
Authority
JP
Japan
Prior art keywords
lead
conductive material
palladium oxide
general formula
pbpdo2
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3307004A
Other languages
Japanese (ja)
Other versions
JPH0694375B2 (en
Inventor
Akiteru Watanabe
昭輝 渡辺
Koji Nozaki
浩司 野崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute for Research in Inorganic Material
Original Assignee
National Institute for Research in Inorganic Material
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Institute for Research in Inorganic Material filed Critical National Institute for Research in Inorganic Material
Priority to JP3307004A priority Critical patent/JPH0694375B2/en
Publication of JPH06135723A publication Critical patent/JPH06135723A/en
Publication of JPH0694375B2 publication Critical patent/JPH0694375B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/20Silicates
    • C01B33/36Silicates having base-exchange properties but not having molecular sieve properties
    • C01B33/38Layered base-exchange silicates, e.g. clays, micas or alkali metal silicates of kenyaite or magadiite type
    • C01B33/44Products obtained from layered base-exchange silicates by ion-exchange with organic compounds such as ammonium, phosphonium or sulfonium compounds or by intercalation of organic compounds, e.g. organoclay material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Conductive Materials (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To obtain a satisfactory electric conductive material of a lead palladium oxide compd. represented by a general formula PbPdO2 by specifying its structure and material characteristics. CONSTITUTION:A lead.palladium oxide compd. represented by a general formula PbPdO2 has a rhombic structure, exhibits electric conductivity like a metal and can be utilized as an electric conductive material. This oxide compd. is easily obtd. by bringing an equipmolar mixture of lead oxide (PbO) and palladium oxide (PdO) into a solid phase reaction at 750 deg.C and can be produced in the form of a single crystal, a thick film or thin film as well as a sintered compact.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、斜方晶系の構造を有す
る鉛・パラジウム酸化物化合物からなる電気伝導材料に
関し、単結晶、焼結体、厚膜、薄膜などとして利用し得
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrically conductive material composed of a lead-palladium oxide compound having an orthorhombic structure and can be used as a single crystal, a sintered body, a thick film, a thin film and the like.

【0002】[0002]

【従来の技術及び発明が解決しようとする課題】従来、
鉛・パラジウム酸化物化合物(PdPdO2)は格子定数が
a=10.902Å、c=4.654Åの六方晶系に属す
る構造を有すると報告されていた。実際に、これらの格
子定数で該化合物の粉末X線回折パターンは良く説明さ
れるが、個々の回折ピークに割り振られた面指数(hkl)
には、全体として六方晶系に特有な規則性が見い出され
ないことから、該化合物が六方晶系に属するという結果
については疑問視されていた。また、これまでに、該化
合物の電気的特性について全く知られていない。
2. Description of the Related Art Conventionally, the problems to be solved by the invention
It has been reported that the lead-palladium oxide compound (PdPdO 2 ) has a structure belonging to a hexagonal system with lattice constants of a = 10.902Å and c = 4.654Å. In fact, these lattice constants well explain the powder X-ray diffraction pattern of the compound, but the plane index (hkl) assigned to each diffraction peak
Since no regularity peculiar to the hexagonal system was found as a whole, the result that the compound belongs to the hexagonal system was questioned. Moreover, to date, nothing is known about the electrical characteristics of the compound.

【0003】本発明は、上記の酸化物化合物の構造を吟
味すると共に、その電気的特性を検討し、良好な電気伝
導材料を提供することを目的とするものである。
It is an object of the present invention to examine the structure of the above-mentioned oxide compound and to examine its electrical characteristics to provide a good electric conductive material.

【0004】[0004]

【課題を解決するための手段】前記課題を解決するた
め、本発明者は、従来の鉛・パラジウム酸化物化合物の
構造を再検討し、同時にその電気的性質を検討した結
果、良好な電気伝導体であることを発見したものであ
る。
In order to solve the above-mentioned problems, the present inventor reexamined the structure of a conventional lead-palladium oxide compound and, at the same time, examined its electrical properties, and found that good electrical conductivity It was discovered that it was a body.

【0005】すなわち、本発明は、一般式PbPdO2
示される斜方晶系の構造を有する鉛・パラジウム酸化物
化合物からなることを特徴とする電気伝導材料を要旨と
するものであり、室温における電気伝導度が約3Scm-1
である。
That is, the present invention is directed to an electrically conductive material characterized by comprising a lead-palladium oxide compound having an orthorhombic structure represented by the general formula PbPdO 2 , at room temperature. Electric conductivity is about 3 Scm -1
Is.

【0006】[0006]

【作用】[Action]

【0007】一般式PbPdO2で示される鉛、パラジウ
ム酸化物化合物については、粉末X線回折図を吟味した
ところ、真の対称性は斜方晶系であることが判明し、格
子定数はa=10.893Å、b=18.879Å、c=
4.6510Åである。
Regarding the lead and palladium oxide compounds represented by the general formula PbPdO 2 , the powder X-ray diffraction pattern was examined, and it was found that the true symmetry was the orthorhombic system, and the lattice constant was a = 10.893Å, b = 18.879Å, c =
It is 4.6510Å.

【0008】この酸化物化合物の電気伝導度は、その角
柱状の圧粉焼結体について直流四端子法で、室温から液
体窒素温度まで測定したところ、図1に比抵抗の温度変
化を示すように、この酸化物化合物は半導体というより
も、むしろ金属的な伝導特性を呈していることがわか
る。室温における電気伝導度が約3Scm-1であり、実用
に値する良好な電気伝導材料である。
The electrical conductivity of this oxide compound was measured from room temperature to liquid nitrogen temperature by the DC four-terminal method for the prismatic green compact sintered body. As shown in FIG. In addition, it can be seen that this oxide compound exhibits metal-like conduction characteristics rather than a semiconductor. It has an electric conductivity of about 3 Scm -1 at room temperature, and is a good electric conductive material that is practically usable.

【0009】また、この酸化物化合物は、酸化鉛(Pb
O)と酸化パラジウム(PdO)の等モル混合物を750℃
で固相反応させることにより、容易に得られる。焼結体
のほか、単結晶、厚膜、薄膜などとしても製造し得る。
This oxide compound is lead oxide (Pb
O) and palladium oxide (PdO) equimolar mixture at 750 ° C
It can be easily obtained by carrying out a solid phase reaction with. In addition to the sintered body, it can be manufactured as a single crystal, a thick film, a thin film, or the like.

【0010】次に本発明の実施例を示す。Next, examples of the present invention will be described.

【0011】[0011]

【実施例】いずれも純度が99.9%以上の酸化パラジ
ウム(PdO)と酸化鉛(PbO)の粉末を、それぞれの割合
が50モル%となるように秤量し、メノウ乳鉢中で十分
に混合した。この混合物をアルミナルツボに充填し、カ
ンタル線発熱体電気炉に移し、室温から加熱し始め、7
00℃で80時間保った後、ルツボを電気炉から取り出
した。生成物はメノウ乳鉢中で再度混合した後、直径6
mmの金型を使用して約10mmの圧粉体を作成し、該圧粉
体を電気炉中で750℃で100時間加熱焼結した。得
られた焼結体を4mm×4mmの断面積を有する角柱状に加
工して、直流4端子法の電気伝導度測定用試料とした。
0.5mAの定電流下で室温から液体窒素温度までその比
抵抗を測定した。その結果は、図1に示すように、良好
な金属的な電気伝導を示した。
[Examples] Palladium oxide (PdO) and lead oxide (PbO) powders each having a purity of 99.9% or more were weighed so that the respective ratios were 50 mol% and thoroughly mixed in an agate mortar. did. This mixture was filled in an alumina crucible, transferred to a Kanthal wire heating element electric furnace, and started to be heated from room temperature.
After maintaining at 00 ° C. for 80 hours, the crucible was taken out of the electric furnace. The product was mixed again in an agate mortar and then
A green compact having a diameter of about 10 mm was prepared using a metal mold of mm, and the green compact was heated and sintered at 750 ° C. for 100 hours in an electric furnace. The obtained sintered body was processed into a prismatic shape having a cross-sectional area of 4 mm × 4 mm to obtain a sample for measuring electric conductivity by a direct current 4-terminal method.
The specific resistance was measured from room temperature to liquid nitrogen temperature under a constant current of 0.5 mA. As a result, as shown in FIG. 1, good metallic electric conduction was shown.

【0012】[0012]

【発明の効果】以上説明したように、本発明によれば、
一般式PbPdO2で示される斜方晶系の構造を有する
鉛、パラジウム酸化物化合物は良好な金属的電気伝導を
示すことから、デバイス、センサー触媒等への利用が期
待される。
As described above, according to the present invention,
Lead and palladium oxide compounds having an orthorhombic structure represented by the general formula PbPdO 2 exhibit good metallic electrical conductivity, and are expected to be used in devices, sensor catalysts and the like.

【図面の簡単な説明】[Brief description of drawings]

斜方晶系に属する酸化物化合物(PbPdO2)の比抵抗の
室温から液体窒素温度までの変化を示す図である。
Is a graph showing changes in orthorhombic belonging oxide compounds from the resistivity at room temperature of (PbPdO 2) to liquid nitrogen temperature.

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 一般式PbPdO2で示される斜方晶系の
構造を有する鉛・パラジウム酸化物化合物からなること
を特徴とする電気伝導材料。
1. An electrically conductive material comprising a lead-palladium oxide compound having an orthorhombic structure represented by the general formula PbPdO 2 .
【請求項2】 単結晶、焼結体、厚膜又は薄膜のいずれ
かである請求項1に記載の電気伝導材料。
2. The electrically conductive material according to claim 1, which is a single crystal, a sintered body, a thick film or a thin film.
JP3307004A 1991-10-25 1991-10-25 Electrically conductive material comprising a lead-palladium oxide compound having an orthorhombic structure represented by the general formula PbPdO2 Expired - Lifetime JPH0694375B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3307004A JPH0694375B2 (en) 1991-10-25 1991-10-25 Electrically conductive material comprising a lead-palladium oxide compound having an orthorhombic structure represented by the general formula PbPdO2

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3307004A JPH0694375B2 (en) 1991-10-25 1991-10-25 Electrically conductive material comprising a lead-palladium oxide compound having an orthorhombic structure represented by the general formula PbPdO2

Publications (2)

Publication Number Publication Date
JPH06135723A true JPH06135723A (en) 1994-05-17
JPH0694375B2 JPH0694375B2 (en) 1994-11-24

Family

ID=17963863

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3307004A Expired - Lifetime JPH0694375B2 (en) 1991-10-25 1991-10-25 Electrically conductive material comprising a lead-palladium oxide compound having an orthorhombic structure represented by the general formula PbPdO2

Country Status (1)

Country Link
JP (1) JPH0694375B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101011330B1 (en) * 2009-07-28 2011-01-28 서강대학교산학협력단 Gapless semiconductor and forming method of the same
WO2011013961A2 (en) * 2009-07-28 2011-02-03 서강대학교 산학협력단 Method for forming a gapless semiconductor thin film
CN103130494A (en) * 2013-02-21 2013-06-05 合肥工业大学 PbxPdO2 block material with room-temperature ferromagnetism, and preparation method thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101011330B1 (en) * 2009-07-28 2011-01-28 서강대학교산학협력단 Gapless semiconductor and forming method of the same
WO2011013961A2 (en) * 2009-07-28 2011-02-03 서강대학교 산학협력단 Method for forming a gapless semiconductor thin film
WO2011013961A3 (en) * 2009-07-28 2011-04-21 서강대학교 산학협력단 Method for forming a gapless semiconductor thin film
CN103130494A (en) * 2013-02-21 2013-06-05 合肥工业大学 PbxPdO2 block material with room-temperature ferromagnetism, and preparation method thereof

Also Published As

Publication number Publication date
JPH0694375B2 (en) 1994-11-24

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