JPH0613388A - Semiconductor substrate and its manufacture - Google Patents

Abstract

PURPOSE:To obtain a high-quality semiconductor substrate with a compound thin-film containing oxygen and nitrogen arranged on the substrate surface, by arranging a deposit containing polluted impurities resulting from crystal defects produced by the emission of active particles, on the compound thin-film. CONSTITUTION:A deposition layer 2 with a deposit containing polluted impurities resulting from crystal defects, produced by the emission, etc., of active particles such as charged particles, radial particles, etc., is formed in the vicinity of the rear a of an Si single crystal substrate 1. On the occasion, polluted impurities being in the vicinity of the surface 1b of the Si single crystal substrate 1 are captured by the deposition layer 2, accompanied with the formation of the deposition layer 2. Accordingly, polluted impurities do not exist in the vicinity of the surface 1b of the above-mentioned substrate. Besides, there are no crystal defects resulting from these polluted impurities either. As the result, it becomes possible to form a nondefective layer 3 being a high-quality Si single crystal layer.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor substrate and a method for manufacturing the same, and more specifically, to charged particles and radical particles in a non-operating region which is not a device forming region (operating region) on the semiconductor substrate. By forming a crystal defect generated by irradiating active particles such as as a precipitation region, and arranging a precipitate containing unnecessary impurities (contaminant impurities) in the substrate in the precipitation region, By reducing the concentration of contaminant impurities in the operating region, it is possible to prevent the deterioration of electrical characteristics and the like due to the presence of contaminant impurities in the compound thin film containing oxygen and nitrogen formed in the operating region. The present invention relates to the improved high-performance semiconductor substrate structure and the manufacturing method thereof.

[0002]

2. Description of the Related Art Generally, a semiconductor substrate such as Si (silicon) is used and a compound thin film containing O (oxygen) and N (nitrogen) is used as a gate insulating film.
In a device such as a micon-ductor structure element, it is mainly in a region where carriers such as electrons and holes move (so-called operating region). If this is a Si device, for example, Na (sodium) is used. ), K (potassium) and other alkali metals, such as Fe (iron), Cr
If impurities (contamination impurities) due to heavy metals such as (chrome), Cu (copper), and Ni (nickel) exist, or if there is a crystal defect that occurs due to the presence of these, the lifetime of the device, etc. Is shortened, and electrical characteristics such as leakage current are remarkably lowered and deteriorated, and at the same time, deformation of the substrate itself at the time of manufacturing the device, weakening thereof, and manufacturing yield It is known to cause undesirable problems such as deterioration.

On the other hand, in order to prevent the occurrence of such a problem, there is a so-called gettering method as a means for trapping the contaminant impurities in the substrate other than the operation region. The gettering method has been widely used in the past, and is roughly divided into an IG method (Intrinsic Gettering method) performed by utilizing the unique properties of the substrate itself and an external method from the outside of the substrate. EG method (Extrinsic Getter)
ing method).

That is, for example, when a Si substrate is taken as an example, the former IG method, which is most commonly performed, is performed by applying heat treatment to a Si substrate in which oxygen is intentionally dissolved in a high concentration. , The oxygen precipitation nuclei are formed inside the non-operation area portion other than the operation area of the substrate, and the oxygen precipitation nuclei trap contaminant impurities and the like in the operation area. Is a region free of contaminant impurities or crystal defects, that is, a so-called defect-free layer (De
nuded zone) to prevent this.

In the latter EG method, P (phosphorus) is applied to a region (usually the back surface of the substrate) which is not the operating region of the substrate.
Or Cl (chlorine) to form a compound or complex with contaminant impurities, or to generate misfit dislocations, or to deposit a polycrystalline Si film directly, mechanically or thermally. By leaving the strain and damage, the contaminant impurities and the crystal defects in the operating region are trapped and removed on these sides, and similarly, the contaminant impurities and the crystal defects on the substrate surface which is the operating region. It is a preventive means for forming a defect-free layer.

Regarding the compound thin film containing oxygen and nitrogen formed in the operating region of the semiconductor substrate, as described above, the MOSFET (MOS Filed Effect Transistor) is used.
or)) as the gate insulating film. On the other hand, when the compound thin film is removed and used, for example, the compound thin film is used as a contamination prevention film.

[0007]

However, the following problems still remain in the respective prevention means.

That is, in the case of the former IG method,
Since the required concentration of oxygen must be solid-dissolved in the substrate, it lacks versatility, and it is extremely difficult to obtain a substrate in which the required concentration of oxygen is uniformly dissolved, so gettering. The reproducibility and reliability of the effect are extremely poor, and in some cases, there is a risk of causing the above-mentioned defects in the operating area, and it takes a relatively long time during manufacturing. The heat treatment is required, and the semiconductor substrate thus obtained has the disadvantage that it is vulnerable to thermal stress, which will be incurred in the subsequent heat treatment process. Since a new donor may be generated by the heat treatment at the time of ringing, this is an extremely serious problem from a practical point of view.

In addition, the latter EG method has several means, each of which is not so severely restricted in substrate specifications as in the former IG method. It is preferable that new contaminant impurities are introduced into the substrate, or depending on each individual prevention means, the substrate may be warped so that the sustainability of the gettering effect is poor and the productivity is poor. There is no problem.

Each of the means for preventing the IG method and the EG method is
Although both have the respective problems as described above, particularly in the latter EG method, when compared with the former IG method, there are restrictions on the substrate specifications and the manufacturing history thereof. Since it is few, it is relatively versatile, and moreover,
Since it is possible for the user of the board to perform gettering corresponding to each individual situation,
It can be said that this is a very advantageous means. However, as mentioned earlier, each EG method has its own problems, and among them, the introduction of new impurities that are likely to occur in the processing process on the back surface of the substrate. For these E
There are major problems from the root to overturning the advantages of the G method itself, and this is an important issue.

Here, the preventive means (so-called straining method) utilizing residual strain and damage on the back surface of the substrate, which is one of the EG methods, is also one of the same EG method in principle. This is one useful preventive means that is considered to be able to deal with the residue on the back surface of the substrate and the warp of the substrate, which has been problematic in the preventive means utilizing the diffusion of P and the deposition of the Si film. In the conventional technology, during the sand blasting process or the ion bombardment process for imparting these strains or damages, or during the heating process by the laser beam, the particles in the substrate to be irradiated or the contaminants from the processing atmosphere inside the substrate are contaminated. ， Recontamination of the operating area is inevitable.

As described above, in these conventional techniques, new contaminant impurities may be introduced into the back surface of the semiconductor substrate during the process of giving residual strain or damage to the back surface of the semiconductor substrate. , The compound thin film containing oxygen and nitrogen formed on the surface of the substrate serving as the operating region, and the vicinity thereof are re-contaminated, and as a result,
It is very difficult to realize a semiconductor substrate in which both cleanliness and gettering effect are improved as expected, in other words, a high quality semiconductor substrate in which a compound thin film containing oxygen and nitrogen is arranged on the substrate surface. It was a thing.

The present invention has been made to solve the above-mentioned conventional problems, and an object of the present invention is to provide a compound thin film containing oxygen and nitrogen on the surface of a substrate which is an operating region of a device, In addition, this type of semiconductor substrate, which is capable of effectively preventing generation of contaminant impurities, crystal defects, and the like in the vicinity thereof and enhancing both cleanliness and gettering effect, and a manufacturing method thereof,
An object of the present invention is to provide a high quality semiconductor substrate structure in which a compound thin film containing oxygen and nitrogen is arranged on the surface of the substrate, and a manufacturing method thereof.

[0014]

In order to achieve the above-mentioned object, a semiconductor substrate according to the present invention and a method for manufacturing the same are provided in a process step of giving residual strain or damage to the back surface of the substrate.
The atmosphere near the substrate is given a required residual strain or damage to the substrate while being maintained in a processing atmosphere containing active particles such as charged particles and radical particles that have a cleaning effect on the substrate. By
This is to prevent new contamination from the processing atmosphere.

That is, the present invention is a semiconductor substrate containing contaminant impurities, which is formed by forming a compound thin film containing oxygen and nitrogen in a region separated from the surface of one substrate.
The semiconductor substrate is characterized in that the compound thin film is formed by arranging deposits containing the contaminant impurities based on crystal defects generated by irradiation of active particles such as charged particles and radical particles.

Further, the present invention is a method of manufacturing a semiconductor substrate in which a crystal defect which becomes a precipitation region of a contaminant impurity is formed in the semiconductor substrate, wherein when the crystal defect is formed, hydrogen is added to the semiconductor substrate. Alternatively, it is a method for manufacturing a semiconductor substrate, which comprises irradiating active particles such as charged particles or radical particles containing a halogen element or an inert gas element.

[0017]

According to the present invention, therefore, high cleanliness and gettering effect can be exerted in order to give a required residual strain and damage to the substrate while preventing new contamination from the processing atmosphere. This makes it possible to realize a high quality semiconductor substrate in which a compound thin film containing oxygen and nitrogen is arranged on the substrate surface.

[0018]

Embodiments of the semiconductor substrate and the method of manufacturing the same according to the present invention will be described below in detail with reference to FIGS.

In this embodiment, electron cyclotron resonance (ECR) excitation is used as a device for generating and irradiating active particles such as charged particles and radical particles for processing a Si single crystal substrate in a MOSFET structure or the like. Type ion source is used, a means for performing straining gettering treatment on the back surface of the substrate and a compound thin film containing oxygen and nitrogen used for the gate insulating film on the front surface side of the substrate, in this case Si nitriding oxide. An example of forming a film (oxynitride, etc.) will be described.

FIG. 1 is a sectional view schematically showing a schematic structure to which a first embodiment of a semiconductor substrate structure according to the present invention is applied.

In the structure of the semiconductor substrate according to the first embodiment of FIG. 1, reference numeral 1 is a Si single crystal substrate, and
Reference numeral 2 denotes a deposition layer on the back surface side of the substrate 1, 3 denotes a defect-free layer on the front surface side, and 4 denotes S on the defect-free layer 3.
i is a nitride oxide film.

That is, in the case of the semiconductor substrate structure according to the first embodiment, the back surface 1a of the Si single crystal substrate 1 is used.
In the vicinity of, a deposition layer 2 is formed in which deposits containing contaminant impurities based on crystal defects, which are generated due to irradiation of active particles such as charged particles and radical particles, are formed. In this case, contaminating impurities existing in the vicinity of the surface 1b of the Si single crystal substrate 1 are captured by the precipitation layer 2 along with the formation of the precipitation layer 2, so that the surface 1b of the substrate 1b Contaminant impurities do not exist in the vicinity and, at the same time, there are no crystal defects generated corresponding to the contaminant impurities, and as a result, the defect-free layer 3 which is a high-quality Si single crystal layer is formed. .

Therefore, the deposited layer 2 and the defect-free layer 3 are formed.
The region between and is, of course, a transition region in which some contamination impurities or crystal defects exist, but in this case, in the defect-free layer 3 in which there are no such contamination impurities or crystal defects. Since the Si oxynitride film 4 including the substrate surface 1b and its vicinity are used as the operating region of the device in the subsequent device manufacturing process, this is extremely good as expected. A device having excellent electrical characteristics can be easily configured.

Further, the deposited layer 2 here is a getter not only for removing the initial contaminant impurities in the Si single crystal substrate 1 but also for new contaminant impurities introduced in the subsequent device manufacturing process. The ring effect can be exhibited.

Next, FIG. 2 is a cross-sectional view schematically showing a schematic structure to which a second embodiment of the semiconductor substrate structure according to the present invention is applied.

Also in the structure of the semiconductor substrate according to the second embodiment shown in FIG. 2, the same symbols as those in the structure of the first embodiment shown in FIG. 1 represent the same or corresponding portions.

That is, in the case of the structure of the semiconductor substrate according to the second embodiment, unlike the case of the structure of the semiconductor substrate according to the first embodiment, the deposition layer 2 is subjected to S
irrespective of the vicinity of the back surface 1a of the i single crystal substrate 1, the S
The central portion of the i single crystal substrate 1, in other words, the central portion that is closer to the defect-free layer 3 is arranged to shorten the diffusion distance of the contaminant impurities during gettering. This is to make it possible to more effectively getter contaminant impurities in the defect-free layer 3 during and after the formation thereof.

Therefore, in the second embodiment configured as described above, substantially the same actions and effects as in the case of the first embodiment can be obtained. Even in the vicinity of 1a, it is possible to form the region 3a similar to the defect-free layer 3 with less contaminant impurities.

Subsequently, a method of manufacturing a semiconductor substrate according to the present invention will be described.

FIG. 3 is a sectional view schematically showing a schematic structure of a manufacturing apparatus according to an example for carrying out the method for manufacturing a semiconductor substrate structure according to the present invention.

In the structure of the manufacturing apparatus according to the example shown in FIG. 3, reference numeral 5 is a plasma generation chamber for generating plasma, and 6 is spatially separated and communicated with the plasma generation chamber 5 to be processed. This is a vacuum sample chamber in which the semiconductor substrate 17 is loaded and processed. Further, 7 is a gas inlet to the plasma generating chamber 5, 8 and 9 are microwave inlets to the plasma generating chamber 5, and a microwave inlet window, 10 are active particles introduced, and 11 is the plasma. A magnetic coil arranged around the generation chamber 5 and 12 are the active particles 10
Of the plasma sample chamber 5 and the vacuum sample chamber 6
It is an insulator that electrically insulates the space. Further, 14 is a gas exhaust port for evacuating the vacuum sample chamber 6, 15 is a substrate fixing base arranged in the vacuum sample chamber 6 and holding a Si substrate 17 to be processed, 16 is a Si substrate to be processed. A substrate temperature control device for heating 17 is a transport tube for the active particles 10, 19 is a power source for controlling ion energy, and 20 is a power source for transporting active particles.

The plasma generating chamber 5 contains, for example, a halogen element such as H ₂ , or F or Cl, or an inert gas element such as He, Ar, or Xe from its gas inlet 7. A high-purity gas is introduced, and a microwave, for example, a microwave of 2.45 GHz is introduced from the microwave introduction port 8 through a microwave introduction window 9 made of an insulating material such as fused quartz or ceramic. In this case, the magnetic coil 11 causes a magnetic field satisfying ECR conditions (in this case, for example, 875 Gauss) in a direction in which the direct current magnetic field is orthogonal to the microwave electric field, so that these interactions are caused. Then, the introduced gas is turned into plasma, and active particles 10 such as ions and radicals are generated.

Therefore, in the plasma generation chamber 5, since plasma generation by ECR excitation using microwaves is utilized, the ionization efficiency is high, and for example,
Even with a gas pressure as low as 10 ⁻⁵ Torr, it is possible to stably realize plasma discharge, and thus the generation of the active particles 10.

The vacuum sample chamber 6 has a gas exhaust port 1
4 so that residual impurity gas that would contaminate the surface of the semiconductor substrate 17 to be processed can be exhausted by a gas exhaust system (not shown), and the inside of the chamber is maintained under a required pressure. The pressure difference between the plasma generation chamber 5 and the vacuum sample chamber 6, the magnetic field generated by the magnetic coil 11, and the plasma from the active particle extraction port 12 arranged so as to face the microwave introduction window 9. The active particles 10 having a required kinetic energy are extracted by the potential and the potential difference between the Si substrates 17 to be processed.

However, in this case, the diameter of the active particle outlet 12 is, for example, 1 to 200.
In addition to allowing wide adjustment within a range of mmφ, for example, by adding a grid or a multi-hole electrode system, the control range of kinetic energy in the active particles 10 can be changed. In addition, the active particles 10 thus extracted are the substrate fixing table 15
The surface of the Si substrate 17 to be processed is irradiated and irradiated, and as shown in the drawing, the active particle transport pipe 18
And a potential of the active particle transport tube 18 is set to a power source 20.
By holding at a floating potential or a positive potential, unnecessary spread of the active particles 10 extracted here is suppressed to a small level.

With respect to the substrate fixing base 15, the temperature of the Si substrate 17 to be processed is kept within a required temperature range while the Si substrate 17 to be processed is held by using, for example, liquid nitrogen or an electric heater. It has a built-in substrate temperature control device 16 to control the Si substrate 17
The temperature is controlled within a range of, for example, −100 ° C. to 1200 ° C., and at least the substrate surface is not contaminated or damaged, and has a material structure and structure.

Furthermore, in order to control the energy of the ions contained in the active particles 10 reaching the Si substrate 17 to be processed, for example, the plasma generation chamber 5 and the substrate fixing table 1 are used.
During the period of time 5, the power source 19 for ion energy control is used to
By applying a voltage such that the i-substrate 17 becomes a negative potential, the energy of the ions in the active particles 10 to be irradiated can be easily adjusted within the range of, for example, 20 eV to 10 keV. .

In each of the above-mentioned configurations, the portion corresponding to the contact with the gas or the active particles 10 is, for example, S
By using a material such as i, SiC, and fused quartz, which does not easily react with the active particles 10 and which does not easily release contaminant impurities, or by coating, Consideration is made so that the extremely high-purity active particles 10 are irradiated onto the semiconductor substrate 17 to be processed.

That is, in the case of the manufacturing apparatus according to the example configured as described above, highly clean active particles corresponding to the source gas species are formed on the surface of the Si substrate 17 controlled to the required temperature. By transporting the active particles 10 and utilizing the physical impact of the active particles 10 such as the electrical shielding effect and the sputtering effect, and the activity of the chemical reaction, contamination by new impurities from the outside can be prevented. In addition, it is possible to keep the atmosphere of the Si substrate 17 and its vicinity clean. The cleaning effect of the active particles 10 in this case has already been disclosed in, for example, JP-A-63-297574 and JP-A-63-313644.

Therefore, in the above device configuration, the ion energy and the like are controlled under the required optimum conditions, so that the impact force corresponding to the kinetic energy of the active particles 10 causes the required area on the Si substrate 17 to be affected. , The Si
Residual strain, damage, etc., which becomes a precipitation region of the precipitate for gettering the contaminant impurities in the substrate 17, can be realized with extremely high controllability. In addition, the S obtained with the residual strain and damage near one surface, which is obtained in this way, is also continued.
With respect to the i substrate 17, in an atmosphere of gas that is difficult to react with a clean Si substrate such as N ₂ or Ar, for example,
By raising the temperature to about 800 ° C. or higher, the contaminant impurities are satisfactorily gettered with these as cores, and as described above, this has a defect-free layer of high quality and is clean. The Si substrate 17 having excellent properties can be easily manufactured. Further, with respect to the Si substrate 17, for example, oxygen composed of O ₂ , NH ₃ , N ₂ O, or the like, or
In a gas atmosphere containing nitrogen, for example, about 700 ° C.
By performing the heat treatment at a temperature of about the above or above, the defect-free layer surface in the Si substrate 17 (in some cases, the exposed portion of the Si layer patterned by the insulating film) is
A silicon oxynitride film is formed by a thermal diffusion reaction, and as a result, a high-quality Si substrate as expected, that is,
Here, a high quality semiconductor substrate having a compound thin film containing oxygen and nitrogen on the substrate surface can be obtained with high reliability, reproducibility and controllability.

As a procedure for forming the Si oxynitride film, it is needless to say that the Si oxynitride film may be formed to have a desired oxynitride film composition from the beginning, or nitridation after oxidization and oxidization after nitridation may be performed.

Next, FIG. 4 is a sectional view schematically showing a schematic structure of a manufacturing apparatus according to another example for carrying out the method for manufacturing a semiconductor substrate structure according to the present invention.

Also in the manufacturing apparatus of FIG.
The same reference numerals as those used in the manufacturing apparatus of FIG. 4 represent the same or corresponding parts. In FIG. 4, reference numeral 21 denotes a high-speed particle irradiation device provided in communication with the vacuum sample chamber 6, and 22 denotes high-speed particles to be irradiated. Further, 23 is irradiation light separately irradiated to the vacuum sample chamber 6 from the outside, and 24 is an irradiation light window thereof.

In the manufacturing apparatus of FIG.
High-speed particle irradiation device 21 for irradiating ions accelerated at high speed and other high-speed particles 22 in order to more effectively give residual strain and damage larger than those of
A means for giving the irradiation light 23 of high intensity is arranged.

That is, also in the manufacturing apparatus of FIG. 4, the active particles 10 are processed in the same manner as in the manufacturing apparatus of FIG.
Is transported to the Si substrate 17 to maintain the atmosphere on the substrate surface and the vicinity thereof in a clean state, for example, Ar, B, C, N, O, F, Si, P, B.
High-speed particles 22 in which ions such as F ₃ are accelerated to several tens of keV or more, or particles such as Si, diamond, and ceramics are accelerated in the sandblasting mechanism 22
Is caused to collide with the Si substrate 17 to cause residual strain or damage to a required area by the collision force,
Further, through an irradiation window 24 made of fused quartz, sapphire, etc., an excimer laser (Excimer Laser) using XeCl, KrF, ArF, F ₂ or the like, or a CO
_2. By similarly irradiating the Si substrate 17 with high-intensity irradiation light 23 from an Ar laser or the like to give thermal strain,
A more effective gettering effect is realized, and by each of these means, even a Si substrate having a desired high quality oxynitride film on the surface, even if this results in oxygen and nitrogen on the substrate surface. It is possible to obtain a high-quality semiconductor substrate with a compound thin film containing a compound, which has high reliability, reproducibility, and controllability.

In each of the above embodiments, the structure of the Si substrate and the formation of the compound thin film containing oxygen and nitrogen by the thermal diffusion reaction on the surface of the substrate have been described as examples. , Compound semiconductor substrates such as GaAs, SiC, epitaxial film structure substrates, or bonded structure substrates, various SOI (Si on Ins)
The same action and effect can be obtained by applying it to a compound structure thin film using a deposition method or the like, and in each embodiment, a case where ECR excited plasma is used as active particles However, it is needless to say that the same is applicable to the case where the plasma generating mechanism is used or the photoexcitation mechanism using a laser or a mercury lamp is used.

Further, the semiconductor substrate structure and the manufacturing method thereof according to each of the above embodiments are merely the most basic examples of the present invention. For example, after completion of patterning or during other device manufacturing processes. It is also possible to apply to other substrates, and for the heat treatment for forming the deposited layer, another heat treatment process in the device manufacturing process may be used, and such a process cannot be changed. It does not depart from the gist of the present invention.

[0048]

As described above in detail with reference to each embodiment, according to the present invention, contaminant impurities formed by forming a compound thin film containing oxygen and nitrogen in a region separated from the surface of one substrate are eliminated. In the semiconductor substrate containing the compound thin film, since the compound thin film is arranged by arranging a precipitate containing contaminant impurities based on crystal defects generated by irradiation of active particles such as charged particles and radical particles, It can prevent new contamination and give required residual strain and damage, and can exert extremely high cleanliness and gettering effect.As a result, a compound thin film containing oxygen and nitrogen is arranged on the substrate surface. Reliable semiconductor substrate with high quality
It has the excellent feature that it can be obtained with good reproducibility and controllability.

[Brief description of drawings]

FIG. 1 is a sectional view schematically showing a schematic configuration to which a first embodiment of a semiconductor substrate structure according to the present invention is applied.

FIG. 2 is a sectional view schematically showing a schematic configuration to which a second embodiment of the same semiconductor substrate structure is applied.

FIG. 3 is a cross-sectional view schematically showing a schematic configuration of a manufacturing apparatus according to an example for carrying out the method for manufacturing a semiconductor substrate structure according to the present invention.

FIG. 4 is a cross sectional view schematically showing a schematic configuration of a manufacturing apparatus according to another example for carrying out the method for manufacturing a semiconductor substrate structure.

[Explanation of symbols]

 1 Si single crystal substrate 1a Substrate back surface 1b Substrate surface 2 Deposition layer 3 Defect-free layer 3a Region containing few contaminant impurities 4 Si oxynitride film 5 Plasma generation chamber 6 Vacuum sample chamber 7 Gas inlet port 8 Microwave inlet port 9 Microwave inlet window 10 Active Particles 11 Magnetic Coil 12 Active Particle Extraction Port 13 Insulator 14 Gas Exhaust Port 15 Substrate Fixing Stand 16 Substrate Temperature Control Device 17 Semiconductor Substrate to be Processed 18 Active Particle Transport Pipe 19 Power Source for Ion Energy Control 20 Active Particle Transport Power supply 21 High-speed particle irradiation device 22 High-speed particles 23 Irradiation light 24 Irradiation light window

Claims (2)

[Claims] 1. A semiconductor substrate containing contaminant impurities, which is formed by forming a compound thin film containing oxygen and nitrogen in a region separated from the surface of one substrate, wherein the compound thin film is charged particles, radical particles, or the like. 2. A semiconductor substrate comprising: a deposit containing the contaminant impurities, which is based on a crystal defect generated by the irradiation of the active particles. 2. A method of manufacturing a semiconductor substrate, wherein a crystal defect that becomes a precipitation region of a contaminant impurity is formed in the semiconductor substrate, wherein the crystal defect is formed in the semiconductor substrate when the crystal defect is formed.
A method of manufacturing a semiconductor substrate, which comprises irradiating active particles such as charged particles and radical particles containing hydrogen, a halogen element, or an inert gas element.