JPH06120190A - Processing method of semiconductor substrate - Google Patents
Processing method of semiconductor substrateInfo
- Publication number
- JPH06120190A JPH06120190A JP26447092A JP26447092A JPH06120190A JP H06120190 A JPH06120190 A JP H06120190A JP 26447092 A JP26447092 A JP 26447092A JP 26447092 A JP26447092 A JP 26447092A JP H06120190 A JPH06120190 A JP H06120190A
- Authority
- JP
- Japan
- Prior art keywords
- pure water
- added
- semiconductor substrate
- oxide film
- rinse
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 27
- 239000004065 semiconductor Substances 0.000 title claims abstract description 25
- 238000003672 processing method Methods 0.000 title description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 53
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 14
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000000126 substance Substances 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 11
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract description 22
- 229910000040 hydrogen fluoride Inorganic materials 0.000 abstract description 21
- 230000003647 oxidation Effects 0.000 abstract description 4
- 238000007254 oxidation reaction Methods 0.000 abstract description 4
- 239000007788 liquid Substances 0.000 abstract description 3
- 238000002385 metal-ion deposition Methods 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 2
- 230000002542 deteriorative effect Effects 0.000 abstract 1
- 238000001035 drying Methods 0.000 abstract 1
- 230000003449 preventive effect Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 15
- 238000011282 treatment Methods 0.000 description 15
- 239000010419 fine particle Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 229910021645 metal ion Inorganic materials 0.000 description 3
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 230000005587 bubbling Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000001954 sterilising effect Effects 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000000844 anti-bacterial effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/78654—Monocrystalline silicon transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Detergent Compositions (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は半導体基板の処理方法に
関し、特に薬液により処理した半導体基板の純水による
リンス方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for treating a semiconductor substrate, and more particularly to a method for rinsing a semiconductor substrate treated with a chemical solution with pure water.
【０００２】[0002]
【従来の技術】従来の純水による半導体基板のリンス方
法は、純水に１０〜５０ｐｐｍのフッ化水素（ＨＦ）を
添加（以下ＨＦ添加純水と記す）している。このように
極微量のＨＦを添加することにより、無添加の純水に比
べ、半導体基板上の自然酸化膜の成長抑制、殺菌、微粒
子付着防止、金属イオンの沈積防止の効果が得られてい
る。2. Description of the Related Art In a conventional method of rinsing a semiconductor substrate with pure water, 10 to 50 ppm of hydrogen fluoride (HF) is added to pure water (hereinafter referred to as HF-added pure water). By adding a very small amount of HF in this way, the effects of suppressing the growth of the natural oxide film on the semiconductor substrate, sterilizing, preventing the adhesion of fine particles, and preventing the deposition of metal ions are obtained as compared with pure water without addition. .
【０００３】また、より大きな微粒子付着防止効果を得
るために、純水中へのＣＯ2 の添加（以下ＣＯ2 添加純
水と記す）も実施されている。Further, in order to obtain a larger effect of preventing the adhesion of fine particles, CO 2 is added to pure water (hereinafter referred to as CO 2 -added pure water).
【０００４】[0004]
【発明が解決しようとする課題】この従来のＨＦ添加純
水による半導体基板の処理方法は、無添加の純水よりは
優れるものの金属イオン沈積防止効果は不十分である。Although this conventional method for treating a semiconductor substrate with pure water containing HF is superior to pure water without addition, the effect of preventing metal ion deposition is insufficient.
【０００５】また、従来のＣＯ2 添加純水は、金属イオ
ン沈積防止効果が全く無く、半導体基板の連続処理によ
り純水中に蓄積される金属不純物のイオンが半導体基板
表面に付着し易いという問題点があった。Further, the conventional CO 2 -added pure water has no effect of preventing metal ion deposition, and ions of metal impurities accumulated in pure water due to continuous treatment of the semiconductor substrate tend to adhere to the surface of the semiconductor substrate. There was a point.
【０００６】[0006]
【課題を解決するための手段】本発明の半導体基板の処
理方法は、半導体基板を薬液処理したのちこの半導体基
板を純水でリンスする半導体基板の処理方法において、
前記純水中に１０〜５０ｐｐｍのフッ化水素と１０〜５
０ｐｐｍの過酸化水素またはオゾンを添加するものであ
る。A method for treating a semiconductor substrate according to the present invention is a method for treating a semiconductor substrate, wherein the semiconductor substrate is chemically treated and then rinsed with pure water.
10 to 50 ppm of hydrogen fluoride and 10 to 5 in the pure water
0 ppm of hydrogen peroxide or ozone is added.
【０００７】[0007]
【実施例】次に本発明の実施例を説明する。EXAMPLES Examples of the present invention will be described below.
【０００８】半導体基板を１％の希ＨＦ溶液に浸漬し、
基板表面のシリコン酸化膜を除去した後、ＨＦと過酸化
水素（Ｈ2 Ｏ2 ）をそれぞれ１０〜５０ｐｐｍ添加した
純水（以下ＨＦ／Ｈ2 Ｏ2 添加純水と記す）で、５〜２
０分リンスを行い、乾燥する。一般に用いられる洗浄液
ＨＦ、ＨＣｌ／Ｈ2 Ｏ2 などは、比較的濃い酸やアルカ
リであるため、半導体基板表面に洗浄液に起因するイオ
ンが吸着し、デバイス特性を劣化させることが知られて
おり、その処理後には純水によるリンスが行われる。第
１の実施例におけるＨＦ／Ｈ2 Ｏ2 添加純水は、このリ
ンス用純水にあらたな付加価値を追加するものである。The semiconductor substrate is immersed in a 1% dilute HF solution,
After removing the silicon oxide film on the surface of the substrate, HF and hydrogen peroxide (H 2 O 2 ) are added to pure water (hereinafter referred to as HF / H 2 O 2 added pure water) in an amount of 10 to 50 ppm to 5-2.
Rinse for 0 minutes and dry. It is known that generally used cleaning liquids HF, HCl / H 2 O 2 and the like are relatively concentrated acids and alkalis, so that ions derived from the cleaning liquid are adsorbed on the surface of the semiconductor substrate, which deteriorates device characteristics. After the treatment, rinse with pure water is performed. The HF / H 2 O 2 added pure water in the first embodiment adds a new added value to this rinse pure water.
【０００９】図１は、本実施例のリンス工程後、半導体
基板を大気中に放置した時の、自然酸化膜成長の経時変
化をＸ線光電子分光法で測定したものである。リンス処
理に無添加の純水、ＣＯ2 添加純水、ＨＦ添加純水をそ
れぞれ用いた例Ａ，Ｂ，Ｃも同時に示す。ＨＦ／Ｈ2 Ｏ
2 添加純水を用いた実施例では、無添加およびＣＯ2添
加純水に比べ自然酸化膜の成長が抑制されており、ＨＦ
添加純水とほぼ同等であることが分かる。従って、ゲー
ト熱酸化の直前に本実施例のリンス処理を用いることに
より、実効膜厚の増加を抑制し、ゲート酸化膜の絶縁耐
圧を劣化させる自然酸化膜の成長を抑性することが可能
である。この効果は、処理方法Ｃ，ＤにおけるＨＦ及び
Ｈ2 Ｏ2 の添加濃度が１０ｐｐｍ以下では少くなる。FIG. 1 shows a change over time in natural oxide film growth measured by X-ray photoelectron spectroscopy when the semiconductor substrate was left in the atmosphere after the rinsing step of this example. Examples A, B and C in which pure water without addition, pure water with CO 2 and pure water with HF were respectively used for the rinse treatment are also shown. HF / H 2 O
In the example using the pure water with 2 added, the growth of the natural oxide film was suppressed as compared with the pure water without added and the pure water with CO 2 added.
It can be seen that it is almost equivalent to the added pure water. Therefore, by using the rinse treatment of this embodiment immediately before the gate thermal oxidation, it is possible to suppress the increase in the effective film thickness and suppress the growth of the natural oxide film that deteriorates the withstand voltage of the gate oxide film. is there. This effect is small when the addition concentration of HF and H 2 O 2 in the processing methods C and D is 10 ppm or less.
【００１０】図２は、本実施例のリンス工程後、ＭＯＳ
ダイオードを作成し酸化膜絶縁破壊特性を評価したもの
であり、リンスに無添加純水、ＣＯ2 添加純水、ＨＦ添
加純水を用いた例Ａ〜Ｃも同時に示す。ＨＦ／Ｈ2 Ｏ2
添加純水は、低電界での絶縁破壊が最も少ない良い特性
が得られた。半導体基板表面への添加薬品のイオン吸着
によるデバイス特性の劣化は無いことが分かる。ただ
し、Ｃ，Ｄ処理におけるＨＦ及びＨ2 Ｏ2 の添加濃度が
５０ｐｐｍをこえると、低電界での絶縁破壊が増加する
ため５０ｐｐｍ以下が望ましい。FIG. 2 shows the MOS after the rinsing process of this embodiment.
The diode was prepared and the dielectric breakdown characteristics of the oxide film were evaluated. Examples A to C in which pure water containing no additive, pure water containing CO 2 and pure water containing HF were used for the rinse are also shown. HF / H 2 O 2
With the added pure water, good characteristics with minimum dielectric breakdown in a low electric field were obtained. It can be seen that the device characteristics are not deteriorated by the ion adsorption of the additive chemical on the surface of the semiconductor substrate. However, if the addition concentration of HF and H 2 O 2 in the C and D treatments exceeds 50 ppm, the dielectric breakdown in a low electric field increases, so 50 ppm or less is desirable.
【００１１】また、本実施例では殺菌効果もＨＦ添加純
水の場合と同様である。In this embodiment, the bactericidal effect is the same as that of the HF-added pure water.
【００１２】図３は、本実施例のリンス工程でそれぞれ
の純水に１ｐｐｂの銅を添加し、リンス処理を行った後
の、半導体基板表面の銅濃度を示す。ＨＦ／Ｈ2 Ｏ2 添
加純水処理Ｄでは、最も銅濃度が低く、金属イオンの沈
積防止効果に優れることが分かる。FIG. 3 shows the copper concentration on the surface of the semiconductor substrate after adding 1 ppb of copper to each pure water in the rinsing step of this embodiment and performing the rinsing process. It is understood that the HF / H 2 O 2 added pure water treatment D has the lowest copper concentration and is excellent in the effect of preventing the deposition of metal ions.
【００１３】図４は、本実施例のリンス工程後の、半導
体基板表面の０．３μｍの以上の微粒子付着量を示す。
ＨＦ／Ｈ2 Ｏ2 添加純水処理Ｄでは、微粒子付着量が最
も少ないことが分かる。FIG. 4 shows the amount of deposited fine particles of 0.3 μm or more on the surface of the semiconductor substrate after the rinsing step of this embodiment.
It is understood that in the HF / H 2 O 2 added pure water treatment D, the amount of adhering fine particles is the smallest.
【００１４】以上述べたように、ＨＦ／Ｈ2 Ｏ2 添加純
水は、従来用いられていた純水のリンス効果に機能を付
加したものであり、従来の純水が利用されていたほとん
どの工程に利用可能である。As described above, HF / H 2 O 2 added pure water has a function added to the rinse effect of pure water that has been used in the past, and most of the conventional pure water has been used. It is available for the process.
【００１５】次に本発明の第２の実施例について説明す
る。本第２の実施例では、Ｈ2 Ｏ2の代わりに、１０〜
５０ｐｐｍのオゾンを純水に添加して用いるものであ
る。得られる効果は、第１の実施例と全く同様である。
オゾンは、オゾン水または、オゾンのバブリングにより
供給される。バブリングは洗浄層内で行うため、濃度を
モニターすることにより、より安定なオゾンの供給が可
能である。Next, a second embodiment of the present invention will be described. In the second embodiment, instead of H 2 O 2 , 10 to 10
It is used by adding 50 ppm of ozone to pure water. The obtained effect is exactly the same as that of the first embodiment.
Ozone is supplied by ozone water or by bubbling ozone. Since bubbling is performed in the cleaning layer, it is possible to supply ozone more stably by monitoring the concentration.
【００１６】尚、上記実施例においては室温の純水にＨ
Ｆ、Ｈ2 Ｏ2 またはオゾンを添加したが、純水の温度を
５０〜８０℃として処理してもよい。この場合、ＨＦ、
Ｈ2Ｏ2 またはオゾンの濃度は、５〜５０ｐｐｍであれ
ば、第１，第２の実施例と同様の効果が得られる。It should be noted that in the above embodiment, H 2 was added to pure water at room temperature.
Although F, H 2 O 2 or ozone was added, the treatment may be performed with the temperature of pure water at 50 to 80 ° C. In this case, HF,
If the concentration of H 2 O 2 or ozone is 5 to 50 ppm, the same effect as in the first and second embodiments can be obtained.
【００１７】[0017]
【発明の効果】以上説明したように本発明は、１０〜５
０ｐｐｍのフッ化水素と１０〜５０ｐｐｍの過酸化水素
（またはオゾン）を添加した純水を用いて薬液処理後の
半導体基板を処理することにより、純水によるリンス効
果に加え、デバイス特性を劣化させること無く、酸化膜
成長抑制，殺菌，微粒子付着防止及び金属イオンの沈積
防止に優れた効果が得られる。As described above, the present invention is 10 to 5
By treating the semiconductor substrate after the chemical treatment with pure water to which 0 ppm hydrogen fluoride and 10 to 50 ppm hydrogen peroxide (or ozone) are added, in addition to the rinse effect of pure water, the device characteristics are deteriorated. In this way, it is possible to obtain excellent effects in suppressing oxide film growth, sterilization, preventing adhesion of fine particles, and preventing deposition of metal ions.
【図１】実施例の効果を説明するための自然酸化膜圧と
放置時間との関係を示す図。FIG. 1 is a diagram showing a relationship between a natural oxide film pressure and a standing time for explaining an effect of an embodiment.
【図２】実施例の効果を説明するための不良率と電界と
の関係を示す図。FIG. 2 is a diagram showing a relationship between a defective rate and an electric field for explaining the effect of the embodiment.
【図３】実施例の効果を説明するための表面銅濃度と処
理方法との関係を示す図。FIG. 3 is a diagram showing a relationship between a surface copper concentration and a treatment method for explaining the effect of the embodiment.
【図４】実施例の効果を説明するための付着微量子数と
処理方法との関係を示す図。FIG. 4 is a diagram showing a relationship between the number of adhering trace particles and a treatment method for explaining the effect of the embodiment.
Ａ 無添加純水処理 Ｂ ＣＯ2 添加純水処理 Ｃ ＨＦ添加純水処理 Ｄ ＨＦ／Ｈ2 Ｏ2 添加純水処理A Additive-free pure water treatment B CO 2 -added pure water treatment C HF-added pure water treatment D HF / H 2 O 2 -added pure water treatment
Claims (1)
体基板を純水でリンスする半導体基板の処理方法におい
て、前記純水中に１０〜５０ｐｐｍのフッ化水素と１０
〜５０ｐｐｍの過酸化水素またはオゾンを添加すること
を特徴とする半導体基板の処理方法。1. A method of treating a semiconductor substrate, which comprises treating the semiconductor substrate with a chemical solution and then rinsing the semiconductor substrate with pure water.
A method for treating a semiconductor substrate, characterized in that hydrogen peroxide or ozone of ˜50 ppm is added.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26447092A JP2884948B2 (en) | 1992-10-02 | 1992-10-02 | Semiconductor substrate processing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26447092A JP2884948B2 (en) | 1992-10-02 | 1992-10-02 | Semiconductor substrate processing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06120190A true JPH06120190A (en) | 1994-04-28 |
| JP2884948B2 JP2884948B2 (en) | 1999-04-19 |
Family
ID=17403673
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26447092A Expired - Fee Related JP2884948B2 (en) | 1992-10-02 | 1992-10-02 | Semiconductor substrate processing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2884948B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09255998A (en) * | 1996-03-27 | 1997-09-30 | Furontetsuku:Kk | Cleaning method and apparatus |
| US5806544A (en) * | 1997-02-11 | 1998-09-15 | Eco-Snow Systems, Inc. | Carbon dioxide jet spray disk cleaning system |
| KR19990039400A (en) * | 1997-11-12 | 1999-06-05 | 윤종용 | Cleaning solution for semiconductor device manufacturing process and removing photoresist and polymer using same |
| US6092538A (en) * | 1996-09-25 | 2000-07-25 | Shuzurifuresher Kaihatsukyodokumiai | Method for using high density compressed liquefied gases in cleaning applications |
| JP2013016594A (en) * | 2011-07-01 | 2013-01-24 | Tokyo Electron Ltd | Substrate cleaning method, substrate cleaning device and memory medium |
-
1992
- 1992-10-02 JP JP26447092A patent/JP2884948B2/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09255998A (en) * | 1996-03-27 | 1997-09-30 | Furontetsuku:Kk | Cleaning method and apparatus |
| US6092538A (en) * | 1996-09-25 | 2000-07-25 | Shuzurifuresher Kaihatsukyodokumiai | Method for using high density compressed liquefied gases in cleaning applications |
| US5806544A (en) * | 1997-02-11 | 1998-09-15 | Eco-Snow Systems, Inc. | Carbon dioxide jet spray disk cleaning system |
| KR19990039400A (en) * | 1997-11-12 | 1999-06-05 | 윤종용 | Cleaning solution for semiconductor device manufacturing process and removing photoresist and polymer using same |
| JP2013016594A (en) * | 2011-07-01 | 2013-01-24 | Tokyo Electron Ltd | Substrate cleaning method, substrate cleaning device and memory medium |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2884948B2 (en) | 1999-04-19 |
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