JPH0611472A - Gas sensor - Google Patents

Gas sensor

Info

Publication number
JPH0611472A
JPH0611472A JP18997792A JP18997792A JPH0611472A JP H0611472 A JPH0611472 A JP H0611472A JP 18997792 A JP18997792 A JP 18997792A JP 18997792 A JP18997792 A JP 18997792A JP H0611472 A JPH0611472 A JP H0611472A
Authority
JP
Japan
Prior art keywords
sensor
measuring
measurement
gas
sensors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18997792A
Other languages
Japanese (ja)
Other versions
JP3219855B2 (en
Inventor
Kiyohiko Kobayashi
清彦 小林
Shinsuke Teramura
信介 寺村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to JP18997792A priority Critical patent/JP3219855B2/en
Publication of JPH0611472A publication Critical patent/JPH0611472A/en
Application granted granted Critical
Publication of JP3219855B2 publication Critical patent/JP3219855B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PURPOSE:To sense the remaining lifetime precisely by furnishing two sensors having uniform shape and characteristics, using one of them for usual measuring and using the other as reference sensor for judging the remaining lifetime. CONSTITUTION:Overhangs 12a, 12b extending in the form of cantilever are furnished in recesses 11a, 11b of a base board 10, and thereover resistance heat emitting elements 13a, 13b and gas sensor elements 14a, 14b of respective identical structure are provided. In this manner, two sensors A, B of uniform shape and characteristics are installed adjacently, and one of them, for example A, is used as sensor for measuring while the other, B, is used as reference sensor. Because the characteristics of the two elements are uniform, it is expected that the measurements by the two are equal at the initial stage. Accordingly the difference between the measurements after a certain runs of measuring is going to represent the degree of deterioration of the sensor for measuring, and when this value of difference exceeds a certain threshold, judgement is passed that the life of the sensor for measuring A has gone out.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、ガスセンサ、より詳細
には、半導体ガスセンサの寿命検知に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to gas sensors, and more particularly to detecting the life of semiconductor gas sensors.

【0002】[0002]

【従来技術】半導体ガスセンサは、加熱した金属酸化物
半導体、例えば、SnO2に還元ガスを反応させると抵
抗値が減少することを利用し、さまざまなガスを検出す
るようになっている。このセンサは加熱しないと作動し
ないため、ヒータを必要とし、このヒータの加熱のため
にかなりの電力を要し、従来のセンサではAC電源が不
可欠であった。
2. Description of the Related Art A semiconductor gas sensor is designed to detect various gases by utilizing the fact that a resistance value decreases when a heated metal oxide semiconductor such as SnO 2 is reacted with a reducing gas. Since this sensor does not operate unless it is heated, a heater is required, and a considerable amount of electric power is required to heat this heater, and an AC power source is indispensable in the conventional sensor.

【0003】この点を改良すべく、架橋構造や片持梁構
造等、空気中に張り出させた張り出し部を設け、この張
り出し部の上に金属酸化物半導体を形成するようにし、
もって、熱容量を可及的に小さくして応答特性を上げ、
且つ消費電力を低下させる試みが成されている。
In order to improve this point, an overhanging portion such as a bridge structure or a cantilever structure which is overhanged in the air is provided, and a metal oxide semiconductor is formed on this overhanging portion.
Therefore, the heat capacity is reduced as much as possible to improve the response characteristics,
Attempts have also been made to reduce power consumption.

【0004】図5は、片持梁構造に形成されたガス検出
器の一例を説明するための構成図で、(a)図は平面
図、(b)図は(a)図のB−B線断面図で、図中、1
0は基板、11は該基板10に形成された凹部、12は
前記基板10の上に形成されたシリコンチップの薄膜絶
縁体で、該薄膜絶縁体12は前記凹部11の上に片持梁
式に張り出す張り出し部又は前記凹部の上に両持梁式に
架橋される橋架部12を有し、該張り出し部又は橋架部
12の上に、抵抗発熱体13及び該抵抗発熱体13に近
接してガス検出素子14が設けられている。なお、この
ガス検出素子14は、具体的には、前述のようにSnO
2の金属酸化物半導体である。前記凹部11、張り出し
部12、抵抗発熱体部13、ガス検出部14は、好まし
くは、同一基板10上に形成されている。
FIG. 5 is a configuration diagram for explaining an example of a gas detector formed in a cantilever structure. FIG. 5A is a plan view and FIG. 5B is a BB line in FIG. 1 is a line cross-sectional view
Reference numeral 0 is a substrate, 11 is a recess formed in the substrate 10, 12 is a thin film insulator of a silicon chip formed on the substrate 10, and the thin film insulator 12 is a cantilever type on the recess 11. A bridge 12 that is bridged in a cantilever manner is provided on the overhanging portion or the above-mentioned concave portion, and the resistance heating element 13 and the resistance heating element 13 are provided on the overhanging portion or the bridge 12. The gas detection element 14 is provided. The gas detection element 14 is, as described above, specifically made of SnO.
2 is a metal oxide semiconductor. The concave portion 11, the projecting portion 12, the resistance heating element portion 13, and the gas detecting portion 14 are preferably formed on the same substrate 10.

【0005】上記従来技術によって、SnO2の金属酸
化物半導体を薄膜化可能とし、かつ、該金属酸化物半導
体支持部材の熱容量を小さくすることを可能にし、もっ
て、微小なヒータで加熱が可能となり、更には、応答速
度が0.5〜0.6msと非常に速いため、ヒータをパル
ス駆動で使用することができるようになった。この結
果、消費電力は従来のものに比べて1/30〜1/50
で済むようになった。
With the above-mentioned conventional technique, the metal oxide semiconductor of SnO 2 can be made thin and the heat capacity of the metal oxide semiconductor supporting member can be made small, so that it can be heated by a minute heater. Furthermore, since the response speed is very fast at 0.5 to 0.6 ms, the heater can be used in pulse drive. As a result, the power consumption is 1/30 to 1/50 of that of the conventional one.
I'm done now.

【0006】前述のごとく構成することによって、ヒー
タをパルス駆動することで消費電力を大幅に押えること
が可能となったが、その反面、センサ自体の性能劣化が
大きくなった。しかし、半導体ガスセンサは、測定動作
を繰り返すと、測定回数に比例する傾向でその感度が徐
々に低下し、センサの性能が劣化すると、空気中での抵
抗値と、ガス中での抵抗値の差が小さくなってくる。ま
た、半導体ガスセンサは製造ロットによる特性のバラツ
キがあるが、ガスの濃度がある一定値を越えた時に反応
するようなセンサにおいては、このような特性のバラツ
キ或いは前述のような特性の劣化は致命的である。
With the above-described structure, it is possible to greatly reduce the power consumption by pulse-driving the heater, but on the other hand, the performance of the sensor itself deteriorates. However, when the measurement operation is repeated, the sensitivity of the semiconductor gas sensor gradually decreases in proportion to the number of measurements, and when the sensor performance deteriorates, the difference between the resistance value in air and the resistance value in gas is decreased. Is getting smaller. Further, the semiconductor gas sensor has variations in characteristics due to manufacturing lots, but in a sensor that reacts when the gas concentration exceeds a certain value, such variations in characteristics or deterioration of the characteristics described above is fatal. Target.

【0007】[0007]

【発明が解決しようとする課題】上述のように、半導体
ガスセンサは、使用中に性能が劣化し、或いは、製造過
程でのバラツキがあり、性能がある値以下においては、
ガスを全く検知できなくなるため、従来より、予め、安
全を見込んだ使用可能回数を設定し、測定回数がその設
定値に達したらセンサを交換するようにしている。しか
し、その場合、特性の悪い(寿命回数が短い)センサに
使用可能回数を合わせざるをえないため、特性の良いセ
ンサを犠牲にしており、実質的なセンサの耐用年数を短
くしている。
As described above, the performance of semiconductor gas sensors is deteriorated during use, or there are variations in the manufacturing process.
Since no gas can be detected at all, conventionally, a usable number of times is set in advance for safety, and the sensor is replaced when the number of times of measurement reaches the set value. However, in that case, since the usable number of times has to be adjusted to a sensor having a poor characteristic (the life is short), the sensor having a good characteristic is sacrificed, and the useful life of the sensor is substantially shortened.

【0008】[0008]

【課題を解決するための手段】本発明は、上記課題を解
決するために、(1)形状、特性の揃った2個のセンサ
を有し、一方のセンサを通常の測定用として使用し、他
方を測定用センサの寿命を判定するための基準用のセン
サとしたことを特徴としたものであり、更には、(2)
前記測定用のセンサの出力と基準用のセンサの出力との
差が閾値以上になったとき、報知手段によって報知する
こと、或いは、(3)前記測定用のセンサが所定回数セ
ンシングすると前記基準用のセンサがセンシングをし
て、両センサの出力の差をとることを特徴としたもので
ある。
In order to solve the above problems, the present invention has (1) two sensors having the same shape and characteristics, one of which is used for normal measurement, The other is characterized by being used as a reference sensor for determining the life of the measurement sensor, and further, (2)
When the difference between the output of the measurement sensor and the output of the reference sensor is equal to or more than a threshold value, the notification means notifies, or (3) when the measurement sensor senses a predetermined number of times, the reference sensor is used. This sensor senses the difference between the outputs of both sensors.

【0009】[0009]

【作用】隣接して作られた或いは特性の略等しい2個の
センサをペアで使い、一つを基準用センサとし、この基
準用センサは通常使用せず(=特性を劣化させない)、
測定用のセンサをある使用回数使用する毎(例えば10
00回の測定毎)に、前記基準用のセンサを使って測定
を行い、両者の測定値の差の変化を監視し、差が閾値以
上になった時、警報を発する。
[Function] Two sensors which are made adjacent to each other or have substantially the same characteristics are used as a pair, and one sensor is used as a reference sensor, and the reference sensor is not normally used (= the characteristics are not deteriorated).
Each time the measurement sensor is used a certain number of times (for example, 10
Measurements are made every time (00 times), the change in the difference between the two measured values is monitored, and an alarm is issued when the difference exceeds a threshold value.

【0010】[0010]

【実施例】図1は、本発明が適用されるガスセンサの一
例を示す図で、(a)図は平面図、(b)図は(a)図
のb−b線断面図で、図中、10は基板、11a,11
bは該基板に形成された凹部、12は前記基板10の上
に形成された薄膜絶縁体で、該薄膜絶縁体12は前記凹
部11a,11bに上に片持梁式に張り出す張り出し部
又は前記凹部の上に両持梁式に架橋される橋架部12
a,12bを有し、該張り出し部又は橋架部12a,1
2bの上に、それぞれ同一構造の抵抗発熱体13a,1
3b、及びこれら抵抗発熱体13a,13bにそれぞれ
近接してガス検出素子14a,14bが設けられてい
る。
1 is a diagram showing an example of a gas sensor to which the present invention is applied. FIG. 1A is a plan view, FIG. 1B is a sectional view taken along line bb in FIG. 10 is a substrate, 11a, 11
b is a recess formed in the substrate, 12 is a thin-film insulator formed on the substrate 10, and the thin-film insulator 12 is a cantilever-shaped projecting portion protruding above the recesses 11a and 11b. A bridge portion 12 which is bridged in a double-supported beam type on the concave portion.
a and 12b, and the projecting portion or bridge portion 12a, 1
2b has the same resistance heating elements 13a, 1
3b and gas detection elements 14a and 14b are provided in proximity to the resistance heating elements 13a and 13b, respectively.

【0011】上述のように、本発明においては、形状、
特性の揃った2つのセンサが隣接して設けられ、一方、
例えばA側が測定用、B側が基準用のセンサとして使用
されるが、このように、同一チップ上にまたは近接して
同一形状の素子を作ると、2つの素子の特性は揃ってい
るので、最初は、2個のセンサの測定値はほぼ同じであ
ることが期待できる。従って、ある測定回数後の両者の
測定値の差は、測定用センサの劣化の程度を表している
と考えることが出来、上記差の値がある閾値を越えた
時、測定用センサの寿命がきたと判定することができ
る。
As described above, in the present invention, the shape,
Two sensors with uniform characteristics are provided adjacent to each other, while
For example, the A side is used as a sensor for measurement and the B side is used as a reference sensor. However, when elements of the same shape are formed on the same chip or close to each other, the characteristics of the two elements are the same. Can be expected to have approximately the same measurements for the two sensors. Therefore, the difference between the measured values after a certain number of times of measurement can be considered to represent the degree of deterioration of the measuring sensor, and when the value of the difference exceeds a certain threshold value, the life of the measuring sensor is It can be determined that it has come.

【0012】図2は、本発明の動作説明するためのブロ
ック図、図3及び図4は、フローチャートで、図2にお
いて、Ehはヒータ用パルス電流駆動源、Esは測定用
定電流パルス駆動源、SW1〜SW3はアナログスイッ
チ(マルチプレクサ)、A/DはAD変換器、Rは測定
ブロックA側のガス検出用抵抗(酸化スズ薄膜抵抗)、
Hは測定ブロックA側のヒータ、Rrefは基準ブロッ
クB側のガス検出用抵抗、Hrefは基準ブロックB側
のヒータ、20は計算部、21は記憶部を示し、記憶部
21に測定回数カウンタCNTR、基準ブロックの使用
を指示するための測定回数間隔の記憶レジスタREG
n、センサの寿命を判定するための予め求めた閾値を格
納するレジスタREGdif等が設けられている。ま
た、23は制御部、24は操作部、25は報告器で、操
作部24は検出スイッチ操作部24a、調整スイッチ操
作部24bを有している。
FIG. 2 is a block diagram for explaining the operation of the present invention, and FIGS. 3 and 4 are flowcharts. In FIG. 2, Eh is a heater pulse current drive source and Es is a measurement constant current pulse drive source. , SW1 to SW3 are analog switches (multiplexers), A / D is an AD converter, R is a gas detection resistor (tin oxide thin film resistor) on the measurement block A side,
H is a heater on the measurement block A side, Rref is a gas detection resistor on the reference block B side, Href is a heater on the reference block B side, 20 is a calculation unit, 21 is a storage unit, and the storage unit 21 has a measurement counter CNTR. , A storage register REG of the measurement frequency interval for instructing the use of the reference block
n, a register REGdif for storing a threshold value obtained in advance for determining the life of the sensor, and the like are provided. Further, 23 is a control unit, 24 is an operation unit, 25 is a reporter, and the operation unit 24 has a detection switch operation unit 24a and an adjustment switch operation unit 24b.

【0013】(1)センサ出荷時の調整 センサを検出対象となるガス中におく。 制御部23からの指示(図は省略)により調整SW
操作部24bをONしてSW1〜SW3の端子1と2を
接続する。 基準ブロックBのHref,Rrefにそれぞれ所
定の電流値と時間幅をもったパルス電流を印加し、Rr
efの両端に発生する検出電圧Vref0をA/Dで測
定する。 同様にしてスイッチSW1〜SW3を切り換え、こ
れらSW1〜SW3の端子1と3を接続し、測定ブロッ
クAのRの両端の電圧V0を測定する。 計算部20にて、 ΔV0=|V0−Vref0
を計算し、記憶部21に格納する。 (2)測定動作 CNTRに初期値0をセットし以下の動作を繰り返
す。 検出スイッチ操作部24bを操作してスイッチSW
1〜SW3を制御し、上記(1)の手順でガス検知の
ためのスイッチSW1〜SW3を3側にONして測定を
行い、その結果をA/D経由で計算部20にて読み取
る。同時にCNTRの内容を+1し、その値がREGn
の内容と等しいか否かを判定する。 での判定が等しくない時はの動作を繰り返す。
等しい時は、測定したRの両端電圧Vと、(1)のと
同様にして測定したRrefの両端電圧Vrefから ΔV0=|V−Vref| を計算し、(1)で求め記憶されているΔV0との間で
|ΔV−ΔV0|を計算し、REGdifとの大小を比
較する。 の比較結果が、 |ΔV−ΔV0|>REGdifの内容 であればガスセンサRの特性劣化が限界に達したと判断
してその旨を使用者に警告する信号を報告器25により
発する。比較結果が上記以外の時は〜の測定を繰り
返す。
(1) Adjustment before shipment of sensor The sensor is placed in the gas to be detected. Adjustment SW according to an instruction (not shown) from the control unit 23
The operation unit 24b is turned on to connect the terminals 1 and 2 of SW1 to SW3. A pulse current having a predetermined current value and a time width is applied to Href and Rref of the reference block B, and Rr
The detection voltage Vref 0 generated at both ends of ef is measured by A / D. Similarly, the switches SW1 to SW3 are switched, the terminals 1 and 3 of these SW1 to SW3 are connected, and the voltage V0 across the R of the measurement block A is measured. In the calculation unit 20, ΔV0 = | V0−Vref 0 |
Is calculated and stored in the storage unit 21. (2) Measurement operation The initial value 0 is set in CNTR and the following operations are repeated. Switch SW by operating the detection switch operation unit 24b
1 to SW3 are controlled, and switches SW1 to SW3 for gas detection are turned on to the 3 side in the procedure of (1) to perform measurement, and the result is read by the calculation unit 20 via A / D. At the same time, the contents of CNTR are incremented by 1, and the value is REGn.
It is determined whether it is equal to the content of. If the judgments at are not equal, the operation at is repeated.
When they are equal, ΔV0 = | V−Vref | is calculated from the measured voltage V across R and the voltage Vref measured across Rref in the same manner as in (1), and is calculated and stored in (1). | ΔV−ΔV0 | is calculated between and, and the magnitude of REGdif is compared. If the comparison result of the above is | ΔV−ΔV0 |> REGdif, it is judged that the characteristic deterioration of the gas sensor R has reached the limit, and the reporter 25 issues a signal to warn the user of that. When the comparison result is other than the above, the measurement of is repeated.

【0014】なお、前記(2)において、Rの特性劣
化が限界に達したと判定した後で、いまだ測定回数の少
ないRref(基準用のセンサ)を今度は測定用センサ
としてある許容回数内で使用するように制御することに
より基準用のセンサを更に有効に利用することができ
る。
In the above (2), after it is determined that the characteristic deterioration of R has reached the limit, Rref (reference sensor), which has a small number of measurement times, is used as a measurement sensor within a certain allowable number of times. By controlling to use, the reference sensor can be used more effectively.

【0015】[0015]

【発明の効果】以上の説明から明らかなように、本発明
によると、センサの耐用期間を延ばすことができるが、
耐用期間の増大は、センサの交換が難しい使用状況等で
特に有効である。また、特性の揃った素子の測定値を比
較して寿命を判定する方式であるので、使用される環境
条件の変動、たとえば、ガス流量の変化、ガス濃度の変
化、周囲温度の変化等による変動分の影響を軽減出来
る。従って、ガスセンサの寿命検知がより正確に行える
等の利点がある。
As is apparent from the above description, according to the present invention, the service life of the sensor can be extended,
Increasing the service life is particularly effective in usage situations where it is difficult to replace the sensor. In addition, because the method determines the life by comparing measured values of elements with uniform characteristics, it is possible to change due to changes in the environmental conditions used, such as changes in gas flow rate, changes in gas concentration, changes in ambient temperature, etc. You can reduce the effect of minutes. Therefore, there is an advantage that the life of the gas sensor can be detected more accurately.

【図面の簡単な説明】[Brief description of drawings]

【図1】 本発明が適用されたガスセンサの一例を示す
図である。
FIG. 1 is a diagram showing an example of a gas sensor to which the present invention is applied.

【図2】 本発明の動作説明をするためのブロック図で
ある。
FIG. 2 is a block diagram for explaining the operation of the present invention.

【図3】 本発明の動作説明をするためのフローチャー
トである。
FIG. 3 is a flowchart for explaining the operation of the present invention.

【図4】 本発明の動作説明をするためのフローチャー
トである。
FIG. 4 is a flowchart for explaining the operation of the present invention.

【図5】 従来のガスセンサの一例を説明するための図
である。
FIG. 5 is a diagram for explaining an example of a conventional gas sensor.

【符号の説明】[Explanation of symbols]

10…基板、11a,11b…凹部、12…薄膜絶縁
体、12a,12b…張り出し部、13a,13b…抵
抗発熱体、14a,14b…ガス検出部材、A…測定用
のセンサ部、B…基準用のセンサ部、20…計算部、2
1…記憶部、23…制御部、24…操作部、25…報告
器。
10 ... Substrate, 11a, 11b ... Recessed part, 12 ... Thin film insulator, 12a, 12b ... Overhang part, 13a, 13b ... Resistance heating element, 14a, 14b ... Gas detection member, A ... Sensor part for measurement, B ... Reference Sensor section, 20 ... Calculation section, 2
1 ... memory | storage part, 23 ... control part, 24 ... operation part, 25 ... reporting device.

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 形状、特性の揃った2個のセンサを有
し、一方のセンサを通常の測定用として使用し、他方を
測定用センサの寿命を判定するための基準用のセンサと
して使用することを特徴とするガスセンサ。
1. A sensor having two sensors of uniform shape and characteristics, one of which is used for normal measurement, and the other of which is used as a reference sensor for determining the life of the measurement sensor. A gas sensor characterized in that.
【請求項2】 前記測定用のセンサの出力と基準用のセ
ンサの出力との差が閾値以上になったとき、報知手段に
よって報知することを特徴とする請求項1に記載のガス
センサ。
2. The gas sensor according to claim 1, wherein when the difference between the output of the measurement sensor and the output of the reference sensor becomes equal to or more than a threshold value, the notification means notifies.
【請求項3】 前記測定用のセンサが所定回数センシン
グすると、前記基準用のセンサがセンシングをして、両
センサの出力の差をとることを特徴とする請求項1又は
2記載のガスセンサ。
3. The gas sensor according to claim 1, wherein when the measurement sensor senses a predetermined number of times, the reference sensor senses and the difference between the outputs of both sensors is taken.
JP18997792A 1992-06-24 1992-06-24 Gas measuring method and gas measuring device Expired - Fee Related JP3219855B2 (en)

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US7251981B2 (en) 2002-05-13 2007-08-07 Honda Motor Co., Ltd. Method and device for diagnosing gas sensor degradation
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