JPH06112521A - Photoelectric conversion device - Google Patents

Photoelectric conversion device

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Publication number
JPH06112521A
JPH06112521A JP30580992A JP30580992A JPH06112521A JP H06112521 A JPH06112521 A JP H06112521A JP 30580992 A JP30580992 A JP 30580992A JP 30580992 A JP30580992 A JP 30580992A JP H06112521 A JPH06112521 A JP H06112521A
Authority
JP
Japan
Prior art keywords
photoelectric conversion
pdn
position detecting
optical position
detecting element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP30580992A
Other languages
Japanese (ja)
Inventor
Minoru Tanaka
実 田中
Ikuo Nishimoto
育夫 西本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Azbil Corp
Original Assignee
Azbil Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Azbil Corp filed Critical Azbil Corp
Priority to JP30580992A priority Critical patent/JPH06112521A/en
Publication of JPH06112521A publication Critical patent/JPH06112521A/en
Pending legal-status Critical Current

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  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)

Abstract

PURPOSE:To obtain a photoelectric conversion device which can be manufactured by an ordinary IC processing technique and in which a signal processing circuit, etc., can be integrated on the same chip by constituting an optical position detecting element by coupling a plurality of photoelectric conversion elements arranged in a prescribed direction to adjacent ones through resistors. CONSTITUTION:An optical position detecting element is constituted by arranging a plurality of photoelectric conversion elements PD1-PDn in a prescribed direction and coupling the elements PD1-PDn to each other through resistors (r) having nearly the same resistance value and photoelectric current output terminals T1 and T2 are provided to the position detecting element. For example, the elements PD1-PDn arranged on one chip at prescribed pitches are connected to each other by their adjacent anodes through the resistors (r). In addition, the first and second terminals T1 and T2 are respectively provided to the anodes of the first element PD1 and last element PDn. In addition, the cathode of each element PD1-PDn is connected to an input terminal Ta.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は光電変換装置に関し、
たとえば距離センサや測距式光電スイッチ等の光の位置
を検出する機器に適用される。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photoelectric conversion device,
For example, it is applied to a device for detecting the position of light such as a distance sensor or a distance measuring photoelectric switch.

【0002】[0002]

【従来の技術】光の位置を検出するものとして図1に示
すPSDすなわち光位置検出素子10が知られている。
この位置検出素子の等価回路を画くと図2のようにな
る。すなわち共通のカソードとなるN層には端子Taが
接続され、P層の両端には2つの出力端子T1、T2が
設けられる。この光位置検出素子10のある位置に光が
入射すると、光位置検出素子10の出力端子T1、T2
から2つの電流出力I1、I2がえられ、光位置検出素
子10の有効長をLとすると、光位置検出素子10の光
の入射位置Yは次の関係式より求められる。 I1/I2=Z2/Z1 =(L/2+Y)/(L/2−Y) (1) となり、したがって電流比I1/I2が分かれば、入射
位置Yは Y=(L/2)×(I1/I2−1)/(I1/I2+1) (2) このように光位置検出素子10は電気的に光の入射位置
Yを求めることが出来るので広く使用されており、図3
に示すように、光電スイッチに適用した例がある。
2. Description of the Related Art The PSD shown in FIG. 1, that is, an optical position detecting element 10 is known as a device for detecting the position of light.
An equivalent circuit of this position detecting element is shown in FIG. That is, the terminal Ta is connected to the N layer serving as a common cathode, and two output terminals T1 and T2 are provided at both ends of the P layer. When light is incident on a certain position of the optical position detecting element 10, the output terminals T1 and T2 of the optical position detecting element 10 are output.
Then, two current outputs I1 and I2 are obtained, and assuming that the effective length of the optical position detecting element 10 is L, the incident position Y of the light of the optical position detecting element 10 is obtained by the following relational expression. I1 / I2 = Z2 / Z1 = (L / 2 + Y) / (L / 2−Y) (1) Therefore, if the current ratio I1 / I2 is known, the incident position Y is Y = (L / 2) × (I1 / I2-1) / (I1 / I2 + 1) (2) As described above, the optical position detection element 10 is widely used because it can electrically determine the incident position Y of light.
As shown in, there is an example applied to a photoelectric switch.

【0003】すなわち図3において、光電スイッチ1は
レンズ系2、投光部3、受光部4および信号処理部5を
有している。そして投光部3から発した光は被検出物体
6、すなわち6A、6B上に輝点を作り、さらにこの被
検出物体6により反射された光はレンズ系2を介して受
光部4の受光面上に輝点像を形成する。被検出物体6
(図3の6A、6Bを代表して符号6で示す)までの距
離Xが変わると、すなわち被検出物体6が6A、6Bに
示す位置になると、受光面上の輝点像の位置Yが動く。
よって、受光面上の輝点像の位置Yを判定することによ
り、その輝点像が被検出物体6によるものか、あるいは
光電スイッチ1から見て、この被検出物体6よりも遠い
位置にある背景7によるものかが判定できる。したがっ
て輝点像の位置Yを判定するために図1に示す光位置検
出素子10は受光部4の受光面上に配設される。そして
輝点像の位置Yが所定値より大きいときに光電スイッチ
は検出信号を発する。この方式の光電スイッチは、受光
面上の光量を検出する方式の光電スイッチと比べ、被検
出物体6表面反射率が変わっても検出距離がほとんど変
動せず、また反射率が大きい背景7の手前にある反射率
の少ない被検出物体6の検出が安定して検出できる等極
めて優れた特徴を有するが、その光位置検出素子は構造
的にきわめて浅い、たとえば0.3[μm]のジャンク
ションをもち、通常のICプロセスでは製造できない。
このため増幅回路を同一チップに集積できない。
That is, in FIG. 3, the photoelectric switch 1 has a lens system 2, a light projecting section 3, a light receiving section 4 and a signal processing section 5. The light emitted from the light projecting unit 3 forms bright spots on the detected object 6, that is, 6A and 6B, and the light reflected by the detected object 6 passes through the lens system 2 and the light receiving surface of the light receiving unit 4. Form a bright spot image on top. Detected object 6
When the distance X up to (indicated by 6 as a representative of 6A and 6B in FIG. 3) changes, that is, when the detected object 6 reaches the positions shown in 6A and 6B, the position Y of the bright spot image on the light receiving surface changes. Move.
Therefore, by determining the position Y of the bright spot image on the light receiving surface, it is determined whether the bright spot image is due to the detected object 6 or at a position farther from the detected object 6 as seen from the photoelectric switch 1. It can be determined whether it is due to the background 7. Therefore, in order to determine the position Y of the bright spot image, the light position detecting element 10 shown in FIG. 1 is arranged on the light receiving surface of the light receiving unit 4. When the position Y of the bright spot image is larger than a predetermined value, the photoelectric switch emits a detection signal. Compared with the photoelectric switch of the type that detects the amount of light on the light receiving surface, this type of photoelectric switch does not change the detection distance even if the surface reflectance of the detected object 6 changes, and is in front of the background 7 where the reflectance is large. Has an extremely excellent feature such as stable detection of the detected object 6 having a low reflectance, but its optical position detecting element has an extremely shallow structure, for example, a junction of 0.3 [μm]. However, it cannot be manufactured by a normal IC process.
Therefore, the amplifier circuit cannot be integrated on the same chip.

【0004】[0004]

【発明が解決しようとする課題】この発明が解決しよう
とする課題は光位置検出素子が構造的にきわめて浅いジ
ャンクションをもつために、通常のICプロセスでは製
造しにくいことである。
The problem to be solved by the present invention is that the optical position detecting element has a structurally extremely shallow junction, which makes it difficult to manufacture by an ordinary IC process.

【0005】[0005]

【課題を解決するための手段】所定の方向に配設した複
数個の光電変換エレメントたがいに隣接する光電変換エ
レメントを抵抗で結合することにより光位置検出素子を
構成し、この光電変換素子の端部に光電流出力端を設け
る。
An optical position detecting element is constructed by connecting a plurality of photoelectric conversion elements adjacent to each other arranged in a predetermined direction with a resistor to form an optical position detecting element, and an end of this photoelectric conversion element. A photocurrent output end is provided in the section.

【0006】[0006]

【作用】光が入射する位置によって、光電流を発生する
光電変換エレメントが決まり、その光電流は結合抵抗の
分圧比により分流するので、光電流出力端から得られる
2つの電流の比から光が入射した位置が算出される。な
お光位置検出素子は通常のICプロセスで製造される。
The photoelectric conversion element that generates a photocurrent is determined by the position of the incident light, and the photocurrent is shunted by the division ratio of the coupling resistance. Therefore, the light is output from the ratio of the two currents obtained from the photocurrent output end. The incident position is calculated. The optical position detecting element is manufactured by a normal IC process.

【0007】[0007]

【実施例】以下図によってこの発明の一実施例について
説明する。すなわち図4において、複数個、すなわちn
個(ただしn>2)の光電変換エレメントPD1、PD
2、・・・PDi、・・・PDnは一つのチップ上にお
いて、所定の方向に、かつ所定のピッチをもって配列さ
れる。また光変換エレメントPD1、PD2、・・・P
Di、・・・PDnの各隣接するアノードは図5に示す
ように、ほぼ等しい抵抗値を有する抵抗r、rで接続さ
れる。これによって光位置検出素子10が構成される。
この光位置検出素子10一端すなわち最初の光電変換エ
レメントPD1のアノードには第1の光電流出力端T1
が、また光位置検出素子10の他端すなわち最後の光電
変換エレメントPDnのアノードには第2の光電流出力
端T2がそれぞれ設けられる。一方各光電変換エレメン
トのカソードは入力端子Taに接続される。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. That is, in FIG. 4, a plurality, that is, n
(Where n> 2) photoelectric conversion elements PD1 and PD
, ... PDi, ... PDn are arranged in a predetermined direction and with a predetermined pitch on one chip. Further, the light conversion elements PD1, PD2, ... P
The adjacent anodes of Di, ... PDn are connected by resistors r, r having substantially the same resistance value, as shown in FIG. This constitutes the optical position detecting element 10.
A first photocurrent output terminal T1 is provided at one end of the light position detecting element 10, that is, the anode of the first photoelectric conversion element PD1.
However, the second photocurrent output terminal T2 is provided at the other end of the optical position detecting element 10, that is, at the anode of the last photoelectric conversion element PDn. On the other hand, the cathode of each photoelectric conversion element is connected to the input terminal Ta.

【0008】上記構成において、図5を等価的に表わす
と図6のようになる。ここで、I1、I2、I3、・・
・Ii・・・Inは光変換エレメントPD1、PD2、
・・・PDi、・・・PDnからなる電流源である。こ
の回路において、i番目の光電変換エレメント、すなわ
ちPDiに光が当たったばあいを考えると、図7の等価
回路に単純化される。つまり、この図の回路は図3に示
す回路と実質的に同じため、I1、I2の電流比から
(2)式により、光の当った位置Yを検出することがで
きる。
In the above structure, FIG. 5 is equivalently expressed as shown in FIG. Where I1, I2, I3, ...
Ii ... In is the light conversion elements PD1, PD2,
... PDi, ... PDn is a current source. In this circuit, considering that the i-th photoelectric conversion element, that is, PDi is exposed to light, the circuit is simplified to the equivalent circuit of FIG. That is, since the circuit of this figure is substantially the same as the circuit shown in FIG. 3, it is possible to detect the position Y where the light hits by the equation (2) from the current ratio of I1 and I2.

【0009】図8は各光電変換エレメントの配列方向に
おいて、各光電変換エレメントの中央部間に抵抗値の大
きい部分を形成したもので、実質的に抵抗rで電気的に
結合したものである。
FIG. 8 shows that a portion having a large resistance value is formed between the central portions of the respective photoelectric conversion elements in the arrangement direction of the respective photoelectric conversion elements, which are substantially electrically connected by a resistance r.

【0010】また図9は各光電変換エレメントの配列方
向において、各光電変換エレメントの下側部分間に抵抗
値の大きい部分を形成したもので、図8と同様に実質的
に抵抗rで電気的に結合したものである。
Further, FIG. 9 shows that a portion having a large resistance value is formed between the lower portions of the respective photoelectric conversion elements in the arrangement direction of the respective photoelectric conversion elements. Combined with.

【0011】この発明は有限個すなわちn個の光電変換
エレメントで構成されるため、入射光がレンズ等の集光
により、各光電変換エレメントのピッチに比較して充分
に小さいばあい、入射位置Yと光電流出力I1、I2の
関係は図10に示すように階段状になる。
Since the present invention is composed of a finite number of photoelectric conversion elements, that is, n photoelectric conversion elements, if the incident light is sufficiently smaller than the pitch of each photoelectric conversion element due to the condensing of a lens or the like, the incident position Y The relationship between the photocurrent outputs I1 and I2 is stepwise as shown in FIG.

【0012】しかし、図11に示すように、入射光の集
光に比較して各光電変換エレメントのピッチが充分小さ
いばあいすなわち入射スポット11が各光電変換エレメ
ントのピッチより大きいばあいには、階段状の特性は示
さず、図12に示すように直線状になる。
However, as shown in FIG. 11, when the pitch of each photoelectric conversion element is sufficiently small as compared with the concentration of incident light, that is, when the incident spot 11 is larger than the pitch of each photoelectric conversion element, It does not show the step-like characteristic but becomes linear as shown in FIG.

【0013】[0013]

【発明の効果】この発明は上述のように、複数個の光電
変換エレメントを所定の方向に配列し、かつたがいに隣
接するエレメントをほぼ等しい値を有する抵抗で結合し
ているので、通常のICプロセス技術で製造することが
可能である。
As described above, according to the present invention, a plurality of photoelectric conversion elements are arranged in a predetermined direction, and adjacent elements are connected to each other by resistors having substantially the same value. It can be manufactured by process technology.

【0014】また、各光電変換エレメントと上記抵抗と
を同一チップ上に集積しているので、この集積化によっ
てS/N比が向上する利点がある。
Further, since each photoelectric conversion element and the resistor are integrated on the same chip, there is an advantage that the S / N ratio is improved by this integration.

【0015】なお同一チップ上に演算回路や信号処理回
路も一緒に集積することにより、装置が小形になる効果
がある。
By integrating the arithmetic circuit and the signal processing circuit together on the same chip, it is possible to reduce the size of the device.

【図面の簡単な説明】[Brief description of drawings]

【図1】光位置検出素子の原理を示す縦断面図である。FIG. 1 is a vertical sectional view showing the principle of an optical position detecting element.

【図2】図1における等価回路である。FIG. 2 is an equivalent circuit in FIG.

【図3】光位置検出素子を適用した反射形光電スイッチ
の縦断面図である。
FIG. 3 is a vertical sectional view of a reflective photoelectric switch to which an optical position detecting element is applied.

【図4】この発明における光電変換装置の光電変換エレ
メントの配列状態を示す構成図である。
FIG. 4 is a configuration diagram showing an arrangement state of photoelectric conversion elements of the photoelectric conversion device according to the present invention.

【図5】この発明における光電変換装置の光位置検出素
子の回路図である。
FIG. 5 is a circuit diagram of an optical position detecting element of the photoelectric conversion device according to the present invention.

【図6】図5における等価回路図である。FIG. 6 is an equivalent circuit diagram in FIG.

【図7】図6の一部の等価回路図である。FIG. 7 is an equivalent circuit diagram of part of FIG.

【図8】この発明における光電変換装置の光電変換エレ
メントの他の配列状態を示す構成図である。
FIG. 8 is a configuration diagram showing another arrangement state of photoelectric conversion elements of the photoelectric conversion device according to the present invention.

【図9】この発明における光電変換装置の光電変換エレ
メントのさらに他の配列状態を示す構成図である。
FIG. 9 is a configuration diagram showing still another arrangement state of photoelectric conversion elements of the photoelectric conversion device according to the present invention.

【図10】この発明における光電変換装置の光位置検出
素子上の入射スポットと出力の関係を示す出力特性図で
ある。
FIG. 10 is an output characteristic diagram showing the relationship between the incident spot on the optical position detection element of the photoelectric conversion device according to the present invention and the output.

【図11】この発明における光電変換装置の光位置検出
素子上と入射スポットとの関係を示す平面図である。
FIG. 11 is a plan view showing the relationship between the light spot on the optical position detection element and the incident spot of the photoelectric conversion device according to the present invention.

【図12】図11における光位置検出素子の出力特性図
である。
12 is an output characteristic diagram of the optical position detecting element in FIG.

【符号の説明】[Explanation of symbols]

1 光電スイッチ 2 レンズ系 3 投光部 4 受光部 5 信号処理部 6 被検出物体 7 背景 10 光位置検出素子 11 入射スポット PD1、PD2、PD3、・・・PDn 光電変換エレ
メント r 抵抗 Ta 端子 T1 端子 T2 端子 I1、I2、I3、・・・Ii・・・In 電流源
DESCRIPTION OF SYMBOLS 1 Photoelectric switch 2 Lens system 3 Light emitting part 4 Light receiving part 5 Signal processing part 6 Detected object 7 Background 10 Optical position detection element 11 Incident spot PD1, PD2, PD3, ... PDn Photoelectric conversion element r Resistance Ta terminal T1 terminal T2 terminals I1, I2, I3, ... Ii ... In Current source

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 複数個の光電変換エレメントを所定の方
向に配列し、たがいに隣接するエレメントをほぼ等しい
値を有する抵抗で結合して光位置検出素子を構成し、か
つこの光位置検出素子に光電流出力端を設けた光電変換
装置。
1. A plurality of photoelectric conversion elements are arranged in a predetermined direction, and adjacent elements are connected to each other by resistors having substantially equal values to form an optical position detecting element. A photoelectric conversion device provided with a photocurrent output terminal.
【請求項2】 複数個の光電変換エレメントを所定の方
向に配列し、たがいに隣接する光電変換エレメントをほ
ぼ等しい抵抗値を有する抵抗で結合して光位置検出素子
を構成し、かつこの光位置検出素子に光電流出力端を設
け、さらに上記各光電変換エレメントと上記抵抗とを同
一チップ上に集積した光電変換装置。
2. A plurality of photoelectric conversion elements are arranged in a predetermined direction, and adjacent photoelectric conversion elements are connected by resistors having substantially the same resistance value to form an optical position detection element, and the optical position is detected. A photoelectric conversion device in which a photocurrent output terminal is provided in the detection element, and the photoelectric conversion elements and the resistor are integrated on the same chip.
JP30580992A 1992-09-28 1992-09-28 Photoelectric conversion device Pending JPH06112521A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP30580992A JPH06112521A (en) 1992-09-28 1992-09-28 Photoelectric conversion device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30580992A JPH06112521A (en) 1992-09-28 1992-09-28 Photoelectric conversion device

Publications (1)

Publication Number Publication Date
JPH06112521A true JPH06112521A (en) 1994-04-22

Family

ID=17949630

Family Applications (1)

Application Number Title Priority Date Filing Date
JP30580992A Pending JPH06112521A (en) 1992-09-28 1992-09-28 Photoelectric conversion device

Country Status (1)

Country Link
JP (1) JPH06112521A (en)

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