JPH06104472A - Generator using solar radiation - Google Patents
Generator using solar radiationInfo
- Publication number
- JPH06104472A JPH06104472A JP4252465A JP25246592A JPH06104472A JP H06104472 A JPH06104472 A JP H06104472A JP 4252465 A JP4252465 A JP 4252465A JP 25246592 A JP25246592 A JP 25246592A JP H06104472 A JPH06104472 A JP H06104472A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- sunlight
- grid electrode
- junction layer
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、太陽光による発電装置
に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solar power generator.
【０００２】[0002]
【従来の技術】従来、この種の装置は、「Ｓ．Ｈ．ＥＬ
−ＨＥＦＮＡＷＩ ｅｔ ａｌ．“Ｆｒｏｎｔ−ｌａｙ
ｅｒ ｄｅｓｉｇｎ ｏｐｔｉｍｉｚａｔｉｏｎ ｆｏ
ｒ ｐｈｏｔｏｖｏｌｔａｉｃ ｓｏｌａｒ ｃｅｌｌ
ｕｎｄｅｒ ｃｏｎｃｅｎｔｒａｔｅｄ ｎｏｎｕｎ
ｉｆｏｒｍ ｓｕｎｌｉｇｈｔ” Ｔｅｃｈｎｉｃａｌ
ｄｉｇｅｓｔ ｏｆ ｔｈｅ ｉｎｔｅｒｎａｔｉｏｎ
ａｌ ＰＶＳＥＣ−５，ｋｙｏｔｏ，Ｊａｐａｎ １９
９０ Ｐ．９１９」に開示されるようなものがあり、構
成材料としての半導体のバンドギャップエネルギー以上
の太陽光を吸収し、その光により生成された自由電子と
自由正孔のＰＮ接合間での移動により、起電力が生じ、
太陽光受光部側に接触したグリッド電極と、受光部とは
反対側の面に接触した電極の両電極により、生じた電力
を取り出すものであった。2. Description of the Related Art Conventionally, this type of device has been known as "SH EL.
-HEFNAWI et al. "Front-lay
er design optimization fo
r photovoltaic solar cell
under concentrated nonun
ifform light "Technical
digest of the international
al PVSEC-5, Kyoto, Japan 19
90 P. 919 ”, which absorbs sunlight having a bandgap energy of a semiconductor as a constituent material or more and moves free electrons and free holes generated by the light between PN junctions. Electromotive force is generated,
The generated electric power is taken out by both the grid electrode in contact with the solar light receiving portion side and the electrode in contact with the surface opposite to the light receiving portion.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、上記し
た従来構成の太陽光による発電装置では、受光部側の電
極がグリッド型の場合、電極部分に照射された太陽光
は、電極下の光起電力の発生部分には入射されず、影と
なってしまい、その部分では光起電力は生じない。した
がって、その電極部分に照射された太陽光のエネルギー
は損失してしまうという問題点があった。However, in the above-described conventional solar power generation apparatus having the above-described structure, when the light-receiving side electrode is of a grid type, the sunlight radiated to the electrode portion is the photovoltaic power below the electrode. Is not incident on the part where the light is generated and becomes a shadow, and no photovoltaic power is generated in that part. Therefore, there has been a problem that the energy of sunlight applied to the electrode portion is lost.
【０００４】本発明は、以上述べた太陽光による発電装
置の受光面に照射された太陽光のうち、電極部分に照射
された光が光起電力として利用されないという問題点を
除去するため、半導体ＰＮ接合層の上に形成され、表面
に太陽光を反射する傾斜面を有するグリッド電極を設
け、反射防止膜により、前記傾斜面から反射された太陽
光を再び反射させ、前記半導体ＰＮ接合層の受光部で受
光させて、グリッド電極部に入射した太陽光も発電に有
効に利用し、太陽電池の効率の向上を図ることができる
太陽光を利用した発電装置を提供することを目的とす
る。The present invention eliminates the above-mentioned problem that the light applied to the electrode portion of the sunlight applied to the light-receiving surface of the power generator by the solar light is not used as the photovoltaic power. A grid electrode formed on the PN junction layer and having an inclined surface that reflects sunlight on the surface is provided, and the sunlight reflected from the inclined surface is reflected again by the antireflection film, and the grid electrode of the semiconductor PN junction layer is formed. It is an object of the present invention to provide a power generation device using sunlight, which can effectively utilize the sunlight that has been received by the light receiving portion and has entered the grid electrode portion for power generation, and can improve the efficiency of the solar cell.
【０００５】[0005]
【課題を解決するための手段】本発明は、上記目的を達
成するために、太陽光を利用した発電装置において、半
導体ＰＮ接合層と、その上に形成され、表面に太陽光を
反射する傾斜面を有するグリッド電極と、前記傾斜面か
ら反射された太陽光を再び反射させ、前記半導体ＰＮ接
合層の受光部で受光させる反射防止膜とを設けるように
したものである。In order to achieve the above object, the present invention provides a semiconductor PN junction layer and a slope formed on the semiconductor PN junction layer, which reflects sunlight on the surface of the semiconductor PN junction layer. A grid electrode having a surface and an antireflection film that reflects the sunlight reflected from the inclined surface again and allows the light to be received by the light receiving portion of the semiconductor PN junction layer are provided.
【０００６】[0006]
【作用】本発明によれば、上記したように構成したの
で、半導体ＰＮ接合層の上に形成され、表面に太陽光を
反射する傾斜面を有するグリッド電極を設け、反射防止
膜により、前記傾斜面から反射された太陽光を再び反射
させ、前記半導体ＰＮ接合層の受光部で受光させること
ができる。According to the present invention, since it is configured as described above, a grid electrode formed on the semiconductor PN junction layer and having an inclined surface for reflecting sunlight is provided on the surface thereof, and the inclined surface is formed by the antireflection film. The sunlight reflected from the surface can be reflected again and received by the light receiving portion of the semiconductor PN junction layer.
【０００７】したがって、グリッド電極部に入射した太
陽光も発電に有効に利用され、太陽電池の効率の向上を
図ることができる。Therefore, the sunlight incident on the grid electrode portion is also effectively used for power generation, and the efficiency of the solar cell can be improved.
【０００８】[0008]
【実施例】以下、本発明の実施例について図を参照しな
がら詳細に説明する。図１は本発明の実施例を示す太陽
光を利用した発電装置の要部断面図、図２はその発電装
置の要部平面図である。これらの図に示すように、１は
光起電力を発生する半導体ＰＮ接合層であり、２はＮ型
半導体側電極、３はＰ型半導体側電極であり、この実施
例では、図３に示すように、ウエハ１０上に格子状のグ
リッド電極３として構成されている。Embodiments of the present invention will be described in detail below with reference to the drawings. 1 is a cross-sectional view of a main part of a power generator using sunlight showing an embodiment of the present invention, and FIG. 2 is a plan view of the main part of the power generator. As shown in these figures, 1 is a semiconductor PN junction layer that generates a photovoltaic force, 2 is an N-type semiconductor side electrode, and 3 is a P-type semiconductor side electrode. In this embodiment, as shown in FIG. Thus, the grid electrodes 3 are formed on the wafer 10 in a grid pattern.
【０００９】このＰ型半導体側電極３は、図１に示すよ
うに、山形形状をなし、その両側の表面は傾斜面３ａを
有している。また、その電極材料は、半導体ＰＮ接合層
がＧａＡｓである場合には、Ｔｉ／Ｐｔ／Ａｕをベース
とし、その表面にＡｌを蒸着する。また、半導体ＰＮ接
合層がＳｉである場合には、電極材料としてＡｌを用い
る。As shown in FIG. 1, the P-type semiconductor-side electrode 3 has a chevron shape, and the surfaces on both sides thereof have inclined surfaces 3a. When the semiconductor PN junction layer is GaAs, its electrode material is Ti / Pt / Au as a base, and Al is vapor-deposited on the surface thereof. When the semiconductor PN junction layer is Si, Al is used as the electrode material.
【００１０】４は反射防止膜であり、例えば、減圧ＣＶ
Ｄ法によって堆積される、厚さ１００μｍのＳｉＯ2 膜
からなり、その表面部ではＰ型半導体側電極３の傾斜面
３ａから反射される太陽光を再び反射して、半導体ＰＮ
接合層１の受光部１ａへと導く。また、反射防止膜は、
ＳｉＯ2 膜に代えて、Ｓｉ3 Ｎ4 膜を用いるようにして
もよい。Reference numeral 4 is an antireflection film, for example, a reduced pressure CV
The SiO 2 film having a thickness of 100 μm deposited by the D method is used to reflect the sunlight reflected from the inclined surface 3 a of the P-type semiconductor-side electrode 3 again on the surface portion thereof to form the semiconductor PN.
It is led to the light receiving portion 1 a of the bonding layer 1. Also, the antireflection film is
A Si 3 N 4 film may be used instead of the SiO 2 film.
【００１１】因みに、各部の寸法を示すと、Ｐ型半導体
側電極３の高さＬ1 は５０μｍ、反射防止膜４の厚さＬ
2 は１００μｍ、受光部の横幅Ｌ3 は５ｍｍ、受光部の
縦幅Ｌ4 は１０ｍｍ、Ｐ型半導体側電極３の横部分（配
線部分）の幅Ｌ6 は１ｍｍ、Ｐ型半導体側電極３の縦部
分の幅Ｌ5 は１００μｍとなる。図１に示すように、反
射防止膜（受光面）４に入射した太陽光のうち、グリッ
ド電極３の付いていない部分に入射した太陽光（ａ）
は、１つのＰＮ接合の半導体で自由電子と自由正孔を生
じ、光起電力を生じる。By the way, the dimensions of each part are as follows. The height L 1 of the P-type semiconductor side electrode 3 is 50 μm, and the thickness L of the antireflection film 4 is L.
2 is 100 μm, the lateral width L 3 of the light receiving portion is 5 mm, the vertical width L 4 of the light receiving portion is 10 mm, the width L 6 of the lateral portion (wiring portion) of the P-type semiconductor side electrode 3 is 1 mm, and the P-type semiconductor side electrode 3 is The width L 5 of the vertical portion is 100 μm. As shown in FIG. 1, of the sunlight that has entered the antireflection film (light-receiving surface) 4, the sunlight that has entered the portion without the grid electrode 3 (a)
Generates free electrons and free holes in the semiconductor of one PN junction and generates a photoelectromotive force.
【００１２】一方、グリッド電極３の部分に入射した太
陽光（ｂ）は、そのグリッド電極３の傾斜面で、図１に
示すように反射され、反射防止膜４の表面で再び反射さ
れ、その反射光は、グリッド電極３の付いていない半導
体ＰＮ接合層１の受光部１ａに入射し、その光により、
半導体ＰＮ接合で、自由電子と自由正孔を生じ、光起電
力を生じる。On the other hand, the sunlight (b) incident on the portion of the grid electrode 3 is reflected on the inclined surface of the grid electrode 3 as shown in FIG. 1, and is reflected again on the surface of the antireflection film 4, The reflected light is incident on the light receiving portion 1a of the semiconductor PN junction layer 1 without the grid electrode 3, and the light causes
At the semiconductor PN junction, free electrons and free holes are generated and a photoelectromotive force is generated.
【００１３】なお、グリッド電極３の傾斜角は、反射防
止膜４の厚さＬ2 、グリッド電極３の幅Ｌ5 ，Ｌ6 との
兼ね合いで適当に決めれば良い。その傾斜角と多段に変
化させるようにしてもよい。以上のように構成された太
陽光を利用した発電装置に、太陽光が入射すると、グリ
ッド電極３の付いていない面に入射した光により起電力
が生じ、更に、グリッド電極３の部分に入射した光も、
反射を経て半導体ＰＮ接合層１に入射し、起電力を生じ
る。The inclination angle of the grid electrode 3 may be appropriately determined in consideration of the thickness L 2 of the antireflection film 4 and the widths L 5 and L 6 of the grid electrode 3. The inclination angle may be changed in multiple steps. When sunlight is incident on the power generation device using sunlight configured as described above, electromotive force is generated by the light incident on the surface without the grid electrode 3 and further incident on the portion of the grid electrode 3. Light too
It is incident on the semiconductor PN junction layer 1 via reflection and generates an electromotive force.
【００１４】このように、グリッド電極３に入射した光
も発電に有効に利用されることになる。図４は本発明の
他の実施例を示す太陽光を利用した発電装置の要部断面
図である。この実施例では、Ｐ型半導体側電極１１には
単一の傾斜面１１ａを形成して、一方側にのみ太陽光を
反射させるようにしている。As described above, the light incident on the grid electrode 3 is also effectively used for power generation. FIG. 4 is a cross-sectional view of a main part of a power generation device using sunlight showing another embodiment of the present invention. In this embodiment, a single inclined surface 11a is formed on the P-type semiconductor side electrode 11 so that sunlight is reflected only on one side.
【００１５】他の構成は、前記した実施例と同様である
ので、前記した実施例と同一の番号を付して、その説明
は省略する。また、前記した電極の形状以外にも、種々
の変形が可能である。更に、上記実施例のグリッド電極
は、格子状のものを示したが、図５に示すように、直線
状のグリッド電極２１にしたり、図６に示すように、四
隅から拡がる四角形状のグリッド電極３１にしたり、図
７に示すように、中心から拡がる四角形状（蜘蛛の巣
状）のグリッド電極４１に構成するようにしてもよい。Since the other structure is the same as that of the above-mentioned embodiment, the same reference numerals as those of the above-mentioned embodiment are attached and the description thereof is omitted. Further, various modifications other than the shape of the electrode described above are possible. Further, although the grid electrode of the above-mentioned embodiment is shown as a grid type, it may be a straight grid electrode 21 as shown in FIG. 5 or a quadrangular grid electrode extending from four corners as shown in FIG. Alternatively, as shown in FIG. 7, the grid electrode 41 may have a quadrangular shape (cobweb shape) that extends from the center.
【００１６】これらの何れの電極においてもその表面に
は傾斜面を形成して、それらの電極上に入射した太陽光
を反射させ、反射防止膜により再反射させて、上記した
ように、半導体ＰＮ接合層の受光部へと導くように構成
することができる。なお、上記実施例においては、半導
体ＰＮ接合層は、受光側（上側）をＰ型半導体、下側を
Ｎ型半導体としたが、逆に受光側（上側）をＮ型半導
体、下側をＰ型半導体として構成することができること
は言うまでもない。その場合は、そのＮ型半導体、Ｐ型
半導体に対応して、電極材料を適宜選定することが望ま
しい。In any of these electrodes, an inclined surface is formed on the surface thereof, and the sunlight incident on these electrodes is reflected and re-reflected by the antireflection film. It can be configured to lead to the light receiving portion of the bonding layer. In the above embodiment, the semiconductor PN junction layer has the P-type semiconductor on the light-receiving side (upper side) and the N-type semiconductor on the lower side. Conversely, the light-receiving side (upper side) has the N-type semiconductor and the lower side has the P-type semiconductor. It goes without saying that it can be configured as a type semiconductor. In that case, it is desirable to appropriately select an electrode material corresponding to the N-type semiconductor and the P-type semiconductor.
【００１７】また、本発明は上記実施例に限定されるも
のではなく、本発明の趣旨に基づき種々の変形が可能で
あり、それらを本発明の範囲から排除するものではな
い。The present invention is not limited to the above embodiments, and various modifications can be made within the scope of the present invention, which are not excluded from the scope of the present invention.
【００１８】[0018]
【発明の効果】以上、詳細に説明したように、本発明に
よれば、受光部側にあるグリッド電極の面を斜めの形状
にし、その表面で太陽光を反射させ、更に、その反射さ
れた太陽光を反射させて、半導体ＰＮ接合層の受光部に
導く反射防止膜を付けるようにしたので、電極上に入射
した太陽光も反射過程を経て、起電力を生じる半導体Ｐ
Ｎ接合部に到達することができ、グリッド電極部に入射
した太陽光も発電に有効に利用され、太陽電池の効率の
向上を図ることができる。As described above in detail, according to the present invention, the surface of the grid electrode on the side of the light receiving portion is formed into an oblique shape, the surface of which reflects sunlight, and the reflected light is reflected. Since the antireflection film that reflects the sunlight and guides it to the light receiving portion of the semiconductor PN junction layer is provided, the sunlight incident on the electrode also undergoes a reflection process to generate an electromotive force.
It is possible to reach the N-junction portion, the sunlight incident on the grid electrode portion is also effectively used for power generation, and the efficiency of the solar cell can be improved.
【図１】本発明の実施例を示す太陽光を利用した発電装
置の要部断面図である。FIG. 1 is a cross-sectional view of a main part of a power generation device using sunlight showing an embodiment of the present invention.
【図２】本発明の実施例を示す太陽光を利用した発電装
置の要部平面図である。FIG. 2 is a plan view of a main part of a power generation device using sunlight showing an embodiment of the present invention.
【図３】本発明の実施例を示す太陽光を利用した発電装
置の概略全体平面図である。FIG. 3 is a schematic overall plan view of a power generation device using sunlight showing an embodiment of the present invention.
【図４】本発明の他の実施例を示す太陽光を利用した発
電装置の要部断面図である。FIG. 4 is a cross-sectional view of a main part of a power generation device using sunlight showing another embodiment of the present invention.
【図５】本発明の実施例を示す太陽光を利用した発電装
置の第２のグリッド電極例を示す平面図である。FIG. 5 is a plan view showing a second grid electrode example of a power generation device using sunlight showing an embodiment of the present invention.
【図６】本発明の実施例を示す太陽光を利用した発電装
置の第３のグリッド電極例を示す平面図である。FIG. 6 is a plan view showing a third grid electrode example of a power generation device using sunlight showing an embodiment of the present invention.
【図７】本発明の実施例を示す太陽光を利用した発電装
置の第４のグリッド電極例を示す平面図である。FIG. 7 is a plan view showing a fourth grid electrode example of a power generation device using sunlight showing an example of the present invention.
１ 半導体ＰＮ接合層 １ａ 受光部 ２ Ｎ型半導体側電極 ３，１１ Ｐ型半導体側電極（グリッド電極） ３ａ，１１ａ 傾斜面 ４ 反射防止膜 １０ ウエハ ２１ 直線状のグリッド電極 ３１ 四隅から拡がる四角形状のグリッド電極 ４１ 中心から拡がる四角形状（蜘蛛の巣状）のグリ
ッド電極DESCRIPTION OF SYMBOLS 1 Semiconductor PN junction layer 1a Light receiving part 2 N-type semiconductor side electrode 3,11 P-type semiconductor side electrode (grid electrode) 3a, 11a Inclined surface 4 Antireflection film 10 Wafer 21 Linear grid electrode 31 Rectangular shape spreading from four corners Grid electrode 41 A square (cobweb) grid electrode that extends from the center
───────────────────────────────────────────────────── フロントページの続き (72)発明者 四方 誠 東京都港区虎ノ門１丁目７番12号 沖電気 工業株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Makoto Shikata 1-7-12 Toranomon, Minato-ku, Tokyo Oki Electric Industry Co., Ltd.
Claims (3)
に形成され、表面に太陽光を反射する傾斜面を有するグ
リッド電極と、（ｃ）前記傾斜面から反射された太陽光
を再び反射させ、前記半導体ＰＮ接合層の受光部で受光
させる反射防止膜とを具備することを特徴とする太陽光
を利用した発電装置。1. A semiconductor PN junction layer, (b) a grid electrode formed on the semiconductor PN junction layer and having an inclined surface for reflecting sunlight, and (c) sunlight reflected from the inclined surface. An anti-reflection film that reflects light again and allows the light-receiving portion of the semiconductor PN junction layer to receive light.
り、前記グリッド電極はＴｉ／Ｐｔ／Ａｕをベースと
し、その表面にＡｌを蒸着してなる請求項１記載の太陽
光を利用した発電装置。2. The power generation device using sunlight according to claim 1, wherein the semiconductor PN junction layer is made of GaAs, and the grid electrode is made of Ti / Pt / Au as a base and Al is vapor-deposited on the surface thereof.
前記グリッド電極はＡｌからなる請求項１記載の太陽光
を利用した発電装置。3. The semiconductor PN junction layer is made of Si,
The power generator using sunlight according to claim 1, wherein the grid electrode is made of Al.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP04252465A JP3107923B2 (en) | 1992-09-22 | 1992-09-22 | Power generation device using sunlight |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP04252465A JP3107923B2 (en) | 1992-09-22 | 1992-09-22 | Power generation device using sunlight |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06104472A true JPH06104472A (en) | 1994-04-15 |
| JP3107923B2 JP3107923B2 (en) | 2000-11-13 |
Family
ID=17237766
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP04252465A Expired - Fee Related JP3107923B2 (en) | 1992-09-22 | 1992-09-22 | Power generation device using sunlight |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3107923B2 (en) |
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| KR101479861B1 (en) * | 2013-10-17 | 2015-01-13 | 중앙대학교 산학협력단 | Solar Cell including grid finger pattern and Solar Cell module including Solar Cell |
| JP2015185676A (en) * | 2014-03-24 | 2015-10-22 | 住友電気工業株式会社 | Solar cell, condensing type photovoltaic power generation unit, condensing type photovoltaic power generation module, and manufacturing method of the condensing type photovoltaic power generation module |
| JP2018181983A (en) * | 2017-04-07 | 2018-11-15 | 日産自動車株式会社 | Power generation panel |
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1992
- 1992-09-22 JP JP04252465A patent/JP3107923B2/en not_active Expired - Fee Related
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|---|---|---|---|---|
| JP2006060104A (en) * | 2004-08-23 | 2006-03-02 | Sony Corp | Photoelectric conversion element and its manufacturing method |
| CN103081120A (en) * | 2010-10-06 | 2013-05-01 | Lg伊诺特有限公司 | Solar cell |
| JP2013539241A (en) * | 2010-10-06 | 2013-10-17 | エルジー イノテック カンパニー リミテッド | Solar cell |
| US9941424B2 (en) | 2010-10-06 | 2018-04-10 | Lg Innotek Co., Ltd. | Solar cell |
| KR101479861B1 (en) * | 2013-10-17 | 2015-01-13 | 중앙대학교 산학협력단 | Solar Cell including grid finger pattern and Solar Cell module including Solar Cell |
| JP2015185676A (en) * | 2014-03-24 | 2015-10-22 | 住友電気工業株式会社 | Solar cell, condensing type photovoltaic power generation unit, condensing type photovoltaic power generation module, and manufacturing method of the condensing type photovoltaic power generation module |
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| JP2018181983A (en) * | 2017-04-07 | 2018-11-15 | 日産自動車株式会社 | Power generation panel |
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| Publication number | Publication date |
|---|---|
| JP3107923B2 (en) | 2000-11-13 |
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