JPH0594951A - Semiconductor manufacturing equipment and manufacture of semiconductor device using that - Google Patents

Abstract

PURPOSE:To provide a semiconductor manufacturing equipment for growing stably a vapor growth film on semiconductor wafers and the manufacturing method of a semiconductor device, which is performed using the semiconductor manufacturing equipment. CONSTITUTION:A semiconductor manufacturing equipment is provided with a vapor phase reaction chamber 10 for forming a vapor growth film on semiconductor substrates by a vapor phase reaction based on a chemical reaction, a spare chamber 5 for preheating the substrates before the film is formed as well as for cooling the substrates after the film is formed and coupled with the chamber 10 and a transferring chamber 4 for transferring the substrates to the chamber 5.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus capable of manufacturing a MOS (metal-silicon dioxide-semiconductor) type semiconductor device with stability, controllability, and mass production, and a semiconductor device using the same. Manufacturing method.

[0002]

2. Description of the Related Art A conventional semiconductor manufacturing apparatus will be described below.

FIG. 4 is a schematic cross-sectional configuration diagram of a conventional semiconductor manufacturing apparatus. In FIG. 4, 2 is a wafer cassette containing a silicon wafer, 6 is a quartz boat on which a silicon wafer is placed when forming a vapor phase growth film, and 9 is a quartz boat 6
With a flange for moving up and down, 10 is a gas phase reaction chamber, 11 is a heater for heating the inside of the gas phase reaction chamber 10, 13 is a vacuum pump for depressurizing the inside of the gas phase reaction chamber 10, and 14 is silicon This is a wafer transfer machine that transfers wafers from the wafer cassette 2 to the quartz boat 6.

An example of performing the reduced pressure vapor phase growth process using the semiconductor manufacturing apparatus configured as described above will be described with reference to the schematic sectional view of FIG. 4 and the flow charts shown in FIGS. 5 (a) to 5 (j). While explaining. Although the temperature in the gas phase reaction chamber 10 is shown on the right side of FIG. 5 for reference, in the conventional semiconductor manufacturing apparatus, a constant temperature (for example,
The temperature is kept at 600 ° C. in the formation of the polycrystalline silicon film.

First, in the step of FIG. 5 (a), the temperature inside the gas phase reaction chamber 10 is 600 ° C. and atmospheric pressure. Next, in the step of FIG. 5B, the silicon wafer is placed in the wafer cassette 2.
Is transferred to the quartz boat 6, but at this time, the flanged elevator 9 is lowered to the room below the gas phase reaction chamber 10. Next, in the step of FIG. 5C, the quartz boat 6 is moved to the gas phase reaction chamber 10 and the inside of the gas phase reaction chamber 10 is sealed. Next, in the step of FIG. 5D, the vacuum pump 1
The inside of the gas phase reaction chamber 10 is decompressed by 3. Next in FIG.
In step (e), a necessary reaction gas is introduced into the vapor phase reaction chamber 10 to form a vapor phase growth film on the surface of the silicon wafer.
Next, in the step of FIG. 5F, the residual reaction gas inside the gas phase reaction chamber 10 is exhausted by the vacuum pump 13 and the process shown in FIG.
In the step, an inert gas is introduced into the gas phase reaction chamber 10 to replace the atmosphere inside. Next, in the process of FIG. 5H, the inside of the gas phase reaction chamber 10 is returned to atmospheric pressure, the elevator 9 with the flange is lowered, and in the process of FIG.
The silicon wafer is returned from the quartz boat 6 to the wafer cassette 2 by using the, and in the process of FIG.
Is taken out, and one reduced pressure vapor phase growth process is completed. During this time, the inside of the gas phase reaction chamber 10 is heated by the heater 11,
It is kept at a constant temperature.

[0006]

However, in the above conventional structure, the atmospheric pressure of the vapor phase reaction chamber is returned to atmospheric pressure in order to take out the silicon wafer after forming the vapor phase growth film. When the reaction product deposited on the inner wall of the chamber adsorbs gas and a sufficient degree of vacuum cannot be obtained in the next evacuation, when the reduced pressure vapor phase growth process is repeated, the reaction product is deposited on the inner wall of the vapor phase reaction chamber. There is a problem that the target ultimate vacuum cannot be obtained due to the influence of the residual gas adsorbed on the reaction product. As a result, problems such as abnormal reaction and generation of dust particles occur, and since the film forming conditions are not constant, there arises a problem in stability in the reduced pressure vapor phase growth process, and the performance of the semiconductor device and the yield in the manufacturing process thereof are increased. Has a great influence on.

Further, as the pattern of the semiconductor device becomes finer, the step on the silicon wafer becomes larger, and it is particularly necessary to bury a conductor in the connection hole with the silicon wafer by some method. For example, when polycrystalline silicon is embedded in a connection hole by a low pressure vapor phase growth apparatus, when the silicon wafer is put into the vapor phase reaction chamber, the temperature in the vapor phase reaction chamber is usually set to prevent the growth of an oxide film. The temperature is controlled to be lower than the temperature required for the vapor phase reaction chamber. Was there. As described above, the conventional reduced pressure vapor phase growth apparatus has a problem that it takes time to raise and lower the temperature and the growth of the oxide film cannot be completely suppressed.

The present invention solves the above conventional problems, and provides a semiconductor manufacturing apparatus for stably growing a vapor phase growth film on a semiconductor substrate and a semiconductor device manufacturing method using the same. The purpose is to

[0009]

To achieve this object, a semiconductor manufacturing apparatus of the present invention comprises a vapor phase reaction chamber for forming a vapor phase growth film on a semiconductor substrate by a vapor phase reaction based on a chemical reaction, A preliminary chamber connected to the vapor phase reaction chamber for preheating the semiconductor substrate before forming the vapor phase growth film and cooling the semiconductor substrate after forming the vapor phase growth film, and for transferring the semiconductor substrate to the preliminary chamber And a transfer chamber.

[0010]

With this structure, it is possible to prevent the formation of an oxide film on the surface of the semiconductor substrate during the reduced pressure vapor phase growth process, and to return the target vapor phase growth film to the atmospheric pressure inside the vapor phase reaction chamber. It is possible to take out the deposited semiconductor substrate. Further, since the gas phase reaction chamber is not returned to the atmosphere, the reaction product in the gas phase reaction chamber and the gas in the atmosphere are not adsorbed to the side wall, and the ultimate vacuum can be stably secured.

Further, by using such a semiconductor manufacturing apparatus, it is possible to maintain a stable state of the apparatus even after continuously carrying out the reduced pressure vapor phase growth step, and thus the obtained vapor phase growth film is formed. A manufacturing method that has stable characteristics, has improved performance in a semiconductor device using such a vapor phase growth film, can solve problems such as a decrease in yield in the manufacturing process, and is excellent in mass productivity. realizable.

[0012]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings.

FIG. 1 is a schematic sectional view of a semiconductor manufacturing apparatus according to an embodiment of the present invention. In FIG. 1, 1 is a gate door partitioning a first transfer chamber 4 described below from the outside, 2 is a wafer cassette, and 3 is a first vacuum evacuation that vacuums the inside of the transfer chamber 4 described later. Pump, 4 is a transfer room,
5 is a spare chamber, 6 is a quartz boat, 7 is a gate door provided on the transfer chamber 4 side to partition the transfer chamber 4 from the spare chamber 5, and 8 is a silicon wafer in the spare chamber 5. Lamp heater, 9 is a flanged elevator, 10 is a gas phase reaction chamber, 11 is a heater for heating the inside of the gas phase reaction chamber 10, 12 is a second vacuum pump for evacuating the inside of the auxiliary chamber 5, Reference numeral 13 is a third vacuum pump for vacuuming the inside of the gas phase reaction chamber 10, and 14 is a wafer transfer machine for transferring a silicon wafer. In FIG. 1, the vapor phase reaction chamber 10 is always kept in a depressurized state, and if necessary, a reaction gas for forming a target vapor phase growth film is introduced,
A predetermined vapor deposition film is deposited on a silicon wafer. Also, the preliminary chamber 5 is always kept in a depressurized state, and the silicon wafer can be vacuum-heated by using, for example, the lamp heater 8. In the transfer chamber 4, the wafer transfer machine 14 is used to transfer the silicon wafer from the wafer cassette 2 to the quartz boat 6 or vice versa, and immediately after the wafer cassette 2 is inserted from the outside. A vacuum state is obtained using the vacuum pump 3 of No. 1.

An example of forming a polycrystalline silicon film as a low pressure vapor phase growth step using the semiconductor manufacturing apparatus configured as described above is shown in a schematic sectional view in FIG. 1 and FIG.
This will be described with reference to the flowcharts shown in (a) to (m). 2 shows the internal temperature of the vapor phase reaction chamber 10 and the internal temperature of the preliminary chamber 5, the internal temperature of the vapor phase reaction chamber 10 is kept constant at 600 ° C., and the internal temperature of the preliminary chamber 4 is when the wafer is heated. Only at 300 ° C., at room temperature at other times.

First, as shown in FIG. 2 (a), the temperature inside the gas phase reaction chamber 10 is 600 ° C., and the temperature in the preliminary chamber 5 is room temperature. Next, in the step of FIG. 2B, the inside of the transfer chamber 4 is returned to atmospheric pressure, the gate door 1 is opened, and the wafer cassette 2 loaded with silicon wafers is set at a predetermined position in the transfer chamber 4. Next, in the step of FIG. 2C, the gate door 1 is closed, and the inside of the transfer chamber 4 is evacuated using the first evacuation pump 3. Next, in the step of FIG. 2D, when the target degree of vacuum is obtained, the gate door 7 between the transfer chamber 4 and the spare chamber 5 is opened, and the quartz descending into the spare chamber 5 is opened. The silicon wafer is transferred to the boat 6 by using the wafer transfer device 14. When the transfer of the silicon wafer is completed, the gate door 7 is closed, and the silicon wafer in the auxiliary chamber 5 is preheated using the lamp heater 8 in the process of FIG. The temperature at this time is 200 ° C to 400 ° C.
Next, in the step of FIG. 2F, the quartz boat 6 loaded with the silicon wafers in the preliminary chamber 5 is moved to the gas phase reaction chamber 10 by the flanged elevator 9. The gas phase reaction chamber 1
The temperature within 0 is maintained at 600 ° C., for example. Next, in the step of FIG. 2G, a silane (SiH ₄ ) gas is introduced into the vapor phase reaction chamber 10 to grow a polycrystalline silicon film by a vapor phase growth method based on a chemical reaction. Next, when the predetermined film thickness is obtained, that is, in step (h), the silane gas as the reaction gas is shut off. Next, in the step of FIG. 2I, the residual gas in the gas phase reaction chamber 10 is exhausted using the third vacuum pump 13 at the same time as the reaction gas is shut off. Next, FIG. 2 (j)
In the process (1), the quartz boat 6 loaded with the silicon wafers in the gas phase reaction chamber 10 is lowered by the flanged elevator 9 and returned to the preliminary chamber 5 to be cooled. When cooled to some extent, the gate door 7 between the transfer chamber 4 and the spare chamber 5 is opened, and the silicon wafer loaded on the quartz boat 6 in the spare chamber 5 in the process of FIG. Transfer to cassette 2 of 4. 2 (l), the gate door 7 is closed and the transfer chamber 4 is returned to atmospheric pressure. Next, in the step of FIG. 2 (m), when the transfer chamber 4 returns to atmospheric pressure, the gate door 1 is opened, the silicon wafer is taken out from the wafer cassette 2, and a series of steps is completed.

The generation of foreign matter when the vapor phase growth film is formed using the semiconductor manufacturing apparatus of this embodiment according to the flow chart shown in FIG. 2 will be described below.

FIG. 3 is a diagram showing the relationship between the number of vapor phase growth film formations and the number of foreign particles per unit area on the semiconductor substrate.
As shown by the white circles in FIG. 3, in the manufacturing method using the conventional semiconductor manufacturing apparatus, 0.3% is obtained after the third vapor deposition film formation start.
In contrast to the range of 50 to 100 foreign particles having a size of μm or more, in the manufacturing method using the semiconductor manufacturing apparatus of this embodiment, the foreign particles are stable at around 20 after the third vapor phase growth film formation start. ing.

[0018]

INDUSTRIAL APPLICABILITY As described above, the present invention is used in the step of forming a vapor phase growth film on a semiconductor substrate by a vapor phase reaction, and before forming the vapor phase reaction chamber and the vapor phase growth film. And a transfer chamber for transferring the semiconductor substrate to the spare chamber, the spare chamber being connected to the vapor phase reaction chamber for cooling the semiconductor substrate after preheating the semiconductor substrate and forming the vapor phase growth film Realizes an excellent semiconductor manufacturing device that can suppress the abnormal growth in the vapor phase reaction chamber and the generation of foreign matter such as dust particles, and form a stable vapor phase growth film, and a semiconductor device manufacturing method using the same. Is what you can do.

[Brief description of drawings]

FIG. 1 is a schematic cross-sectional configuration diagram of a semiconductor manufacturing apparatus according to an embodiment of the present invention.

2A to 2M are flowcharts of manufacturing steps using the same semiconductor manufacturing apparatus.

FIG. 3 is a diagram showing the relationship between the number of vapor phase growth film formations and the number of foreign particles per unit area on a semiconductor substrate.

FIG. 4 is a schematic sectional configuration diagram of a conventional semiconductor manufacturing apparatus.

5A to 5J are flowcharts of manufacturing steps using the semiconductor manufacturing apparatus.

[Explanation of symbols]

 4 Transfer room 5 Preliminary room 10 Gas phase reaction room

Claims (5)

[Claims] 1. A vapor phase reaction chamber for forming a vapor phase growth film on a semiconductor substrate by a vapor phase reaction based on a chemical reaction, and preheating the semiconductor substrate before forming the vapor phase growth film. A semiconductor manufacturing apparatus comprising: a preliminary chamber connected to the vapor phase reaction chamber for cooling the semiconductor substrate after formation, and a transfer chamber for transferring the semiconductor substrate to the preliminary chamber. 2. The semiconductor manufacturing apparatus according to claim 1, wherein the vapor phase reaction chamber, the preliminary chamber and the transfer chamber can all be independently evacuated. 3. The semiconductor manufacturing apparatus according to claim 1, wherein the vapor phase reaction chamber, the preliminary chamber and the transfer chamber are all independently temperature controllable. 4. The semiconductor manufacturing apparatus according to claim 1, 2 or 3, wherein the vapor phase reaction chamber, the preliminary chamber and the transfer chamber can all independently introduce an inert gas. 5. The reduced pressure vapor phase growth step according to claim 1,
A method for manufacturing a semiconductor device, which comprises forming a vapor phase growth film on a semiconductor substrate by using the semiconductor manufacturing device described in 2, 3, or 4.