JPH0590222A - Coaxial plasma processor - Google Patents
Coaxial plasma processorInfo
- Publication number
- JPH0590222A JPH0590222A JP26884591A JP26884591A JPH0590222A JP H0590222 A JPH0590222 A JP H0590222A JP 26884591 A JP26884591 A JP 26884591A JP 26884591 A JP26884591 A JP 26884591A JP H0590222 A JPH0590222 A JP H0590222A
- Authority
- JP
- Japan
- Prior art keywords
- heater
- temperature
- cylindrical chamber
- ashing
- plasma processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は半導体ウェハ表面のレジ
スト膜のアッシング等に用いる同軸型プラズマ処理装置
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a coaxial type plasma processing apparatus used for ashing a resist film on the surface of a semiconductor wafer.
【０００２】[0002]
【従来の技術】外部電極と内部電極とを筒状チャンバー
を挟んで同軸状に配置したプラズマ処理装置として特公
昭５３−３３４７１号公報に開示される装置がある。2. Description of the Related Art There is an apparatus disclosed in Japanese Examined Patent Publication No. 53-33471 as a plasma processing apparatus in which an external electrode and an internal electrode are coaxially arranged with a cylindrical chamber interposed therebetween.
【０００３】同軸型プラズマ処理装置の一般的な構造
は、図４に示すように合成石英等からなる縦長の筒状チ
ャンバー１００の上下の開孔をチャンバープレート１０
１，１０２で閉塞し、筒状チャンバー１００の内外に筒
状の内部電極１０３及び筒状の外部電極１０４を夫々配
置し、この外部電極１０４の外方にプレヒータ１０５を
配置してなる。As shown in FIG. 4, the general structure of the coaxial type plasma processing apparatus has a chamber plate 10 in which upper and lower openings of a vertically long cylindrical chamber 100 made of synthetic quartz or the like are formed.
1 and 102 are closed, and a cylindrical inner electrode 103 and a cylindrical outer electrode 104 are arranged inside and outside the cylindrical chamber 100, respectively, and a preheater 105 is arranged outside the outer electrode 104.
【０００４】一方、合成石英等のロッドを起立してなる
ウェハー保持体１０６に、予め５０〜１００枚のウェハ
ー１０７を段積み収納したものを、図中矢印の如くに
プラズマ処理装置に下から挿入する。筒状チャンバー１
００内を真空引きし、減圧下でＯ2（酸素）を投入し、
プレヒータ１０５に通電して装置全体をある程度暖め
て、プラズマの発生条件を整えるとともに、高周波発振
器１０８により、外部電極１０４と内部電極１０３との
間に酸素プラズマを発生せしめる。On the other hand, a wafer holder 106 in which rods of synthetic quartz or the like are erected is preliminarily stacked and accommodated with 50 to 100 wafers 107, and is inserted from below into a plasma processing apparatus as indicated by an arrow in the figure. To do. Cylindrical chamber 1
The inside of 00 is evacuated and O 2 (oxygen) is added under reduced pressure.
The preheater 105 is energized to warm the entire apparatus to some extent to adjust the plasma generation condition, and the high frequency oscillator 108 causes oxygen plasma to be generated between the external electrode 104 and the internal electrode 103.
【０００５】この酸素プラズマによって、ウェハー１０
７…表面のホトレジストを灰化処理（アッシング）す
る。By this oxygen plasma, the wafer 10
7 ... Ashing the photoresist on the surface.
【０００６】図５はアッシングレートの温度依存性を示
す図であり、ｘ軸はウェハーの端部−中心−端部を示
し、ｙ軸はアッシングレートを示す。パラメータｔ０，
ｔ１，ｔ２は処理温度であって、ｔ０＜ｔ１＜ｔ２の関
係にある。同図によれば、ウェハーの中心より端部の方
がアッシングレートは高く、また、処理温度が高いほど
アッシングレートは高くなる。FIG. 5 is a graph showing the temperature dependence of the ashing rate, where the x-axis shows the edge-center-edge of the wafer and the y-axis shows the ashing rate. Parameter t0,
The processing temperatures t1 and t2 are in the relationship of t0 <t1 <t2. According to the figure, the ashing rate is higher at the edge portion than at the center of the wafer, and the ashing rate becomes higher as the processing temperature becomes higher.
【０００７】[0007]
【発明が解決しようとする課題】前記プレヒータ１０５
は装置温度を一定値に保ってアッシングレートをある程
度高めることを目的として付設されている。しかし、同
軸型プラズマ処理装置でプラズマが発生すると、そのプ
ラズマの熱により筒状チャンバー１００内の温度が徐々
に上がる傾向にある。そして、同軸型プラズマ処理装置
の筒状チャンバー１００は、ウェハー １０７を５０〜
１００枚段積み収納する関係から、縦長である。その為
にドラフト作用によって筒状チャンバー１００の上部が
下部に対して高温になることが分かった。その結果、図
５に示した通り上方のウェハー１０７は、ウェハーの中
心と端部のアッシングレートの差が著しくなり好ましく
ない。[Problems to be Solved by the Invention] The preheater 105
Is attached for the purpose of increasing the ashing rate to some extent by keeping the apparatus temperature at a constant value. However, when plasma is generated in the coaxial plasma processing apparatus, the temperature of the cylindrical chamber 100 tends to gradually rise due to the heat of the plasma. Then, the cylindrical chamber 100 of the coaxial type plasma processing apparatus has a wafer 107 of 50-
It is vertically long because 100 sheets are stacked and stored. Therefore, it was found that the upper portion of the cylindrical chamber 100 has a higher temperature than the lower portion due to the draft action. As a result, as shown in FIG. 5, the upper wafer 107 is not preferable because the difference in the ashing rate between the center and the edge of the wafer becomes significant.
【０００８】そこで本発明の目的は同軸型プラズマ処理
装置におけるアッシングレートの均一性を改善すること
にあり、具体的にはプレヒータの分割による改善策と、
雰囲気ガスによる改善策とを提示するものである。Therefore, an object of the present invention is to improve the uniformity of the ashing rate in the coaxial type plasma processing apparatus. Specifically, an improvement measure by dividing the preheater,
The improvement measures by the atmospheric gas are presented.
【０００９】[0009]
【課題を解決するための手段】上記目的を達成すべく本
発明は、縦長の筒状チャンバーの内外に筒状の内部電極
及び外部電極を配置し、この外部電極の外方に少なくと
も高さ方向に２分割されたヒータを配置し、これらヒー
タに夫々温度制御用のコントローラを付設して同軸型プ
ラズマ処理装置を構成する。In order to achieve the above object, the present invention has a cylindrical inner electrode and an outer electrode arranged inside and outside a vertically long cylindrical chamber, and at least outside the outer electrode in the height direction. A heater divided into two is arranged, and a controller for temperature control is attached to each of these heaters to form a coaxial type plasma processing apparatus.
【００１０】又、縦長の筒状チャンバーの内外に筒状の
内部電極及び外部電極を配置し、前記筒状チャンバーに
酸素とヘリウムの混合ガスを注入するガス導入管を介設
することで同軸型プラズマ処理装置を構成する。Further, a cylindrical internal electrode and an external electrode are arranged inside and outside a vertically long cylindrical chamber, and a gas introduction pipe for injecting a mixed gas of oxygen and helium is provided in the cylindrical chamber so as to be coaxial type. It constitutes a plasma processing apparatus.
【００１１】なお、前記混合ガスはトータルガス流量に
対するヘリウム流量で示される混合比が２５〜３０％の
範囲とすることが好ましい。The mixed gas preferably has a mixing ratio in the range of 25 to 30% indicated by the flow rate of helium with respect to the total flow rate of gas.
【００１２】[0012]
【作用】準備段階で上部ヒータ及び下部ヒータに通電
し、基本的には上部ヒータを先にＯＦＦして、下部ヒー
タのみで加熱する。雰囲気ガスを、酸素のみでなく酸素
とヘリウムの混合ガスとすることにより、アッシングレ
ートの均一性が飛躍的に向上する。In the preparatory stage, the upper heater and the lower heater are energized, basically the upper heater is turned off first, and only the lower heater heats. By using not only oxygen but also a mixed gas of oxygen and helium as the atmospheric gas, the uniformity of the ashing rate is dramatically improved.
【００１３】[0013]
【実施例】本発明の実施例を添付図面に基づいて以下に
説明する。図１は本発明に係る同軸型プラズマ処理装置
の断面図であり、同軸型プラズマ処理装置１は合成石英
等からなる縦長の筒状チャンバー２の上下開口をチャン
バープレート３，４で閉塞し、筒状チャンバー２の内外
に同心円状に内部電極５と外部電極６を夫々配置し、こ
の外部電極６の外方に上部ヒータ７と下部ヒータ８を段
積み配置してなる。Embodiments of the present invention will be described below with reference to the accompanying drawings. FIG. 1 is a cross-sectional view of a coaxial type plasma processing apparatus according to the present invention. In the coaxial type plasma processing apparatus 1, the vertical openings of a vertically long cylindrical chamber 2 made of synthetic quartz or the like are closed by chamber plates 3 and 4. The inner electrode 5 and the outer electrode 6 are concentrically arranged inside and outside the cylindrical chamber 2, and the upper heater 7 and the lower heater 8 are stacked and arranged outside the outer electrode 6.
【００１４】上部ヒータ７は上部コントローラ９を介し
て給電され、上部コントローラ９は上部熱電対１０の測
温値に基づいて上部ヒータ７をＯＮ／ＯＦＦ制御する。The upper heater 7 is supplied with power via the upper controller 9, and the upper controller 9 controls ON / OFF of the upper heater 7 based on the temperature measurement value of the upper thermocouple 10.
【００１５】又、下部ヒータ８は下部コントローラ１１
を介して給電され、下部コントローラ１１は下部熱電対
１２の測温値に基づいて下部ヒータ８をＰＩＤ制御す
る。ＰＩＤ制御は比例−積分−微分制御をいい、測温値
が設定値から十分に離れていればヒータ出力を高め、測
温値が設定値に近づくほどヒータ出力を絞り、オーバー
シュートやハンチングを防止する制御方式である。The lower heater 8 is a lower controller 11
The lower controller 11 performs PID control of the lower heater 8 on the basis of the temperature measurement value of the lower thermocouple 12. PID control is proportional-integral-derivative control. The heater output is increased if the measured temperature value is far from the set value, and the heater output is reduced as the measured value approaches the set value to prevent overshoot or hunting. It is a control method to perform.
【００１６】なお、本実施例では上部ヒータ７、下部ヒ
ータ８ともに赤外線ヒータである。図中、１４はガス導
入管であり、配管を介して酸素（Ｏ2）とヘリウムガス
（Ｈｅ）が所定の混合比で導入される。１５は排気管で
あり図示せぬ真空ポンプで排気され、筒状チャンバー２
内を所定の圧力に減圧するものである。１６は酸素ボン
ベ、１７は流量計、１８は定流量弁、１９はヘリウムボ
ンベ、２０は流量計、２１は定流量弁、２２は流量コン
トローラである。In this embodiment, both the upper heater 7 and the lower heater 8 are infrared heaters. In the figure, 14 is a gas introduction pipe, through which oxygen (O 2 ) and helium gas (He) are introduced at a predetermined mixing ratio. Reference numeral 15 denotes an exhaust pipe, which is evacuated by a vacuum pump (not shown) to form a cylindrical chamber 2
The inside is depressurized to a predetermined pressure. Reference numeral 16 is an oxygen cylinder, 17 is a flow meter, 18 is a constant flow valve, 19 is a helium cylinder, 20 is a flow meter, 21 is a constant flow valve, and 22 is a flow controller.
【００１７】以上の構成からなる同軸型プラズマ処理装
置の作用を次に述べる。排気管１５において筒状チャン
バー２内を１０-5Ｔｏｒｒ（トール）程度まで真空排気
した後に酸素ヘリウム混合ガスをガス導入管１４から補
給して、筒状チャンバー２内を０．５〜１．０ Ｔｏｒ
ｒに保つ。The operation of the coaxial type plasma processing apparatus having the above structure will be described below. The inside of the cylindrical chamber 2 is evacuated to about 10 −5 Torr in the exhaust pipe 15, and then the oxygen-helium mixed gas is replenished from the gas introduction pipe 14 so that the inside of the cylindrical chamber 2 is 0.5 to 1.0. Tor
keep r.
【００１８】一方、上部ヒータ７及び下部ヒータ８にて
装置温度を８０℃に保ち、外部電極６と内部電極５との
間にプラズマを発生せしめてウェハーＷのアッシングを
開始する。アッシング処理時間は約１５分であるが、こ
の間にチャンバー２の温度が徐々に上昇するので、上部
ヒータ７は上部コントローラ９によりＯＦＦされ、下部
ヒータ８も下部コントローラ１１により徐々に絞られ、
チャンバー２の温度上昇を抑制する。On the other hand, the apparatus temperature is kept at 80 ° C. by the upper heater 7 and the lower heater 8, plasma is generated between the external electrode 6 and the internal electrode 5, and the ashing of the wafer W is started. Although the ashing time is about 15 minutes, the temperature of the chamber 2 gradually rises during this time, so the upper heater 7 is turned off by the upper controller 9, and the lower heater 8 is also gradually reduced by the lower controller 11.
The temperature rise of the chamber 2 is suppressed.
【００１９】即ち、ドラフト作用により上方程高温とな
るので、プラズマ発生後は下部ヒータ８のみで保温を図
ることに特徴があり、これによってアッシングレートの
悪化は効果的に阻止される。That is, since the temperature becomes higher toward the upper side due to the draft action, it is characterized in that the temperature is kept only by the lower heater 8 after the plasma is generated, whereby the deterioration of the ashing rate is effectively prevented.
【００２０】そして、本発明はヒータ分割の他に、酸素
にヘリウムガスを混入させたことを特徴とする。図２は
混合ガス比とアッシングレートの関係を示す図、図３は
混合ガス比と均一性の関係を示す図である。なお、ｘ軸
は混合比（ヘリウム流量／トータルガス流量）である。The present invention is characterized by mixing helium gas with oxygen in addition to the heater division. FIG. 2 is a diagram showing the relationship between the mixed gas ratio and the ashing rate, and FIG. 3 is a diagram showing the relationship between the mixed gas ratio and the uniformity. The x-axis is the mixing ratio (helium flow rate / total gas flow rate).
【００２１】図２によればヘリウムガスの比率が高まる
ほど、アッシングレートが減少する。そして、図３に示
す通りウェハー１枚における、端部と中央部のアッシン
グレートの比であるところの、面内均一性は酸素のみの
場合に約３０％であったものが、混合比５０％で約１０
％に大幅改善されている。According to FIG. 2, the ashing rate decreases as the proportion of helium gas increases. As shown in FIG. 3, the in-plane uniformity, which is the ratio of the ashing rate at the edge portion to the central portion of one wafer, was about 30% in the case of oxygen alone, but the mixing ratio was 50%. About 10
It has been significantly improved to%.
【００２２】又、同一チャージにおける複数のウェハー
間のアッシングレートの比であるところのウェハー間均
一性は酸素のみの場合に約１５％であったものが、混合
比２５〜３５％（中央値３０％）では約３．５％に大幅
に改善されている。従って、混合比が２５〜３０％にお
いて、ウェハー間均一性が最良となり、このときに面内
均一性は１１〜１４％で、酸素のみの場合の均一性に対
し２倍以上改善されている。The wafer-to-wafer uniformity, which is the ratio of ashing rates between a plurality of wafers under the same charge, was about 15% in the case of oxygen alone, but the mixing ratio was 25 to 35% (median value 30). %) Has been significantly improved to about 3.5%. Therefore, when the mixing ratio is 25 to 30%, the wafer-to-wafer uniformity becomes the best, and the in-plane uniformity is 11 to 14%, which is more than double the uniformity in the case of oxygen alone.
【００２３】尚、図１に示した実施例においてプレヒー
タは上部ヒータ７及び下部ヒータ８での２分割構成とし
たが、これに限るものではなく上中下等３分割以上とし
てもよい。In the embodiment shown in FIG. 1, the pre-heater is divided into two parts, that is, the upper heater 7 and the lower heater 8, but the pre-heater is not limited to this and may be divided into three or more parts such as upper, middle and lower parts.
【００２４】[0024]
【発明の効果】以上に述べた通りプレヒータを上下に分
割することで上方のヒータを先行してＯＦＦすることが
出来、筒状チャンバーの高さ方向の温度差の拡大を抑制
することが出来るのでウェハーのアッシングレート均一
性は改善される。As described above, by dividing the pre-heater into upper and lower parts, the upper heater can be turned off in advance, and the expansion of the temperature difference in the height direction of the cylindrical chamber can be suppressed. Wafer ashing rate uniformity is improved.
【００２５】又、雰囲気ガスを酸素にヘリウムを加えた
混合ガス（好ましくは混合比が２５〜３５％）とするこ
とにより、酸素のみの場合に比較してアッシングレート
の均一性が格段に改善される。By using a mixed gas of oxygen and helium (preferably a mixing ratio of 25 to 35%) as the atmosphere gas, the uniformity of the ashing rate is markedly improved as compared with the case of only oxygen. It
【００２６】よって、プレヒータの分割とヘリウム混合
ガスの使用の一方若しくは双方を採用することにより、
同軸型プラズマ処理装置におけるウェハーのアッシング
レートの均一性を十分に改善することが出来る。Therefore, by adopting one or both of the division of the preheater and the use of the helium mixed gas,
It is possible to sufficiently improve the uniformity of the ashing rate of the wafer in the coaxial type plasma processing apparatus.
【図１】本発明に係る同軸型プラズマ処理装置の断面図FIG. 1 is a sectional view of a coaxial plasma processing apparatus according to the present invention.
【図２】本発明の混合ガス比とアッシングレートの関係
を示す図FIG. 2 is a diagram showing a relationship between a mixed gas ratio and an ashing rate according to the present invention.
【図３】本発明の混合ガス比と均一性の関係を示す図FIG. 3 is a diagram showing a relationship between a mixed gas ratio and uniformity according to the present invention.
【図４】従来の同軸型プラズマ処理装置の断面図FIG. 4 is a sectional view of a conventional coaxial type plasma processing apparatus.
【図５】アッシングレートの温度依存性と面内均一性を
示す図FIG. 5 is a diagram showing temperature dependence of ashing rate and in-plane uniformity.
１…同軸型プラズマ処理装置、２…筒状チャンバー、５
…内部電極、６…外部電極、７…上部ヒータ、８…下部
ヒータ、９…上部コントローラ、１１…下部コントロー
ラ、１４…ガス導入管、Ｗ…ウェハー。1 ... Coaxial plasma processing apparatus, 2 ... Cylindrical chamber, 5
... internal electrode, 6 ... external electrode, 7 ... upper heater, 8 ... lower heater, 9 ... upper controller, 11 ... lower controller, 14 ... gas introducing pipe, W ... wafer.
─────────────────────────────────────────────────────
─────────────────────────────────────────────────── ───
【手続補正書】[Procedure amendment]
【提出日】平成４年１１月１８日[Submission date] November 18, 1992
【手続補正１】[Procedure Amendment 1]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】請求項３[Name of item to be corrected] Claim 3
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【手続補正２】[Procedure Amendment 2]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】００１１[Correction target item name] 0011
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【００１１】なお、前記混合ガスはトータルガス流量に
対するヘリウム流量で示される混合比が２０〜３５％の
範囲とすることが好ましい。The mixed gas preferably has a mixing ratio represented by a helium flow rate with respect to the total gas flow rate in a range of 20 to 35% .
【手続補正３】[Procedure 3]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】００１７[Correction target item name] 0017
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【００１７】以上の構成からなる同軸型プラズマ処理装
置の作用を次に述べる。排気管１５において筒状チャン
バー２内を１０-3 Ｔｏｒｒ（トール）程度まで真空排気
した後に酸素ヘリウム混合ガスをガス導入管１４から補
給して、筒状チャンバー２内を０．５〜１．０ Ｔｏｒ
ｒに保つ。The operation of the coaxial type plasma processing apparatus having the above structure will be described below. The inside of the cylindrical chamber 2 is evacuated to about 10 −3 Torr in the exhaust pipe 15, and then the oxygen-helium mixed gas is replenished from the gas introduction pipe 14 so that the inside of the cylindrical chamber 2 is 0.5 to 1.0. Tor
keep r.
【手続補正４】[Procedure amendment 4]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】００１８[Correction target item name] 0018
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【００１８】一方、上部ヒータ７及び下部ヒータ８にて
装置温度を８０℃に保ち、外部電極６と内部電極５との
間にプラズマを発生せしめてウェハーＷのアッシングを
開始する。アッシング処理時間は約１５分であるが、こ
の間にチャンバー２内の温度が徐々に上昇するので、上
部ヒータ７は上部コントローラ９によりＯＦＦされ、下
部ヒータ８も下部コントローラ１１により徐々に絞ら
れ、チャンバー２内の温度上昇を抑制する。On the other hand, the apparatus temperature is kept at 80 ° C. by the upper heater 7 and the lower heater 8, plasma is generated between the external electrode 6 and the internal electrode 5, and the ashing of the wafer W is started. Although the ashing time is about 15 minutes, the temperature inside the chamber 2 gradually rises during this time, so the upper heater 7 is turned off by the upper controller 9, and the lower heater 8 is also gradually narrowed by the lower controller 11, suppressing the temperature rise in 2.
【手続補正５】[Procedure Amendment 5]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】００２２[Name of item to be corrected] 0022
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【００２２】又、同一チャージにおける複数のウェハー
間のアッシングレートの比であるところのウェハー間均
一性は酸素のみの場合に約１５％であったものが、混合
比２０〜３５％（中央値３０％）では約３．５％に大幅
に改善されている。従って、混合比が２０〜３５％にお
いて、ウェハー間均一性が最良となり、このときに面内
均一性は１１〜１４％で、酸素のみの場合の均一性に対
しそれぞれ２倍以上改善されている。Further, the uniformity between wafers, which is the ratio of the ashing rate between a plurality of wafers under the same charge, was about 15% when only oxygen was used, but the mixing ratio was 20 to 35% (median value 30). %) Has been significantly improved to about 3.5%. Therefore, the mixing ratio of the 20 to 35%, between wafer uniformity is the best, with 11 to 14% in-plane uniformity at this time are respectively improved twice or more with respect to the uniformity of the case of oxygen only ..
【手続補正６】[Procedure Amendment 6]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】００２５[Name of item to be corrected] 0025
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【００２５】又、雰囲気ガスを酸素にヘリウムを加えた
混合ガス（好ましくは混合比が２０〜３５％）とするこ
とにより、酸素のみの場合に比較してアッシングレート
の均一性が格段に改善される。Further, by setting the atmosphere gas to be a mixed gas of oxygen and helium (preferably a mixing ratio of 20 to 35%), the uniformity of the ashing rate is markedly improved as compared with the case of only oxygen. It
【手続補正７】[Procedure Amendment 7]
【補正対象書類名】図面[Document name to be corrected] Drawing
【補正対象項目名】図１[Name of item to be corrected] Figure 1
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【図１】 [Figure 1]
Claims (3)
部電極及び外部電極を配置し、この外部電極の外方に少
なくとも高さ方向に２分割されたヒータを配置し、これ
らヒータに夫々温度制御用のコントローラを付設してな
る同軸型プラズマ処理装置。1. A cylindrical internal electrode and an external electrode are arranged inside and outside a vertically long cylindrical chamber, and a heater divided into at least two parts in a height direction is arranged outside the external electrode. A coaxial type plasma processing apparatus equipped with a controller for temperature control.
部電極及び外部電極を配置し、前記筒状チャンバーに酸
素とヘリウムの混合ガスを注入するガス導入管を介設し
てなる同軸型プラズマ処理装置。2. A coaxial type in which a cylindrical inner electrode and an outer electrode are arranged inside and outside a vertically long cylindrical chamber, and a gas introducing pipe for injecting a mixed gas of oxygen and helium is provided in the cylindrical chamber. Plasma processing equipment.
するヘリウム流量で示される混合比が２５〜３０％の範
囲とされたことを特徴とする請求項２記載の同軸型プラ
ズマ処理装置。3. The coaxial plasma processing apparatus according to claim 2, wherein the mixed gas has a mixing ratio represented by a helium flow rate with respect to a total gas flow rate in a range of 25 to 30%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26884591A JP3222899B2 (en) | 1991-09-20 | 1991-09-20 | Coaxial plasma processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26884591A JP3222899B2 (en) | 1991-09-20 | 1991-09-20 | Coaxial plasma processing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0590222A true JPH0590222A (en) | 1993-04-09 |
| JP3222899B2 JP3222899B2 (en) | 2001-10-29 |
Family
ID=17464072
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26884591A Expired - Fee Related JP3222899B2 (en) | 1991-09-20 | 1991-09-20 | Coaxial plasma processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3222899B2 (en) |
-
1991
- 1991-09-20 JP JP26884591A patent/JP3222899B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP3222899B2 (en) | 2001-10-29 |
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