JPH0582034A - Electron beam tube with imput cavity - Google Patents
Electron beam tube with imput cavityInfo
- Publication number
- JPH0582034A JPH0582034A JP4158091A JP4158091A JPH0582034A JP H0582034 A JPH0582034 A JP H0582034A JP 4158091 A JP4158091 A JP 4158091A JP 4158091 A JP4158091 A JP 4158091A JP H0582034 A JPH0582034 A JP H0582034A
- Authority
- JP
- Japan
- Prior art keywords
- cavity
- array
- body part
- outer body
- primary
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J23/00—Details of transit-time tubes of the types covered by group H01J25/00
- H01J23/36—Coupling devices having distributed capacitance and inductance, structurally associated with the tube, for introducing or removing wave energy
Landscapes
- Microwave Tubes (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は電子ビーム管配列に関
し、より特定的にはこの配列に高周波エネルギを印加す
るための入力共振空洞に関する。FIELD OF THE INVENTION This invention relates to electron beam tube arrays, and more particularly to an input resonant cavity for applying high frequency energy to the array.
【0002】[0002]
【従来の技術】本発明はクライストロード(バリアン・
アソシエーツ社の登録商標)のような誘導性出力四極管
装置(IOT)に特に適用可能である。誘導性出力四極
管(以下にIOTと略す)は周知であるが従来提唱され
ている設計は、テレビジョンの全周波数範囲(例えば4
70−860MHz) に亘って必要な瞬時帯域幅(例えば
8MHz)を得るためには、複数の管を使用する必要があ
り、各管は複数の異なる空洞を用いて使用しなければな
らないという問題があった。現在ではクライストロンの
場合には、電子ビーム通路に沿って配列された種々の空
洞の同調をずらせ(スタガさせ)、異なる周波数の出力
を加え合わせて所要帯域幅を得ることによってこの要求
を満足させている。しかし、これは普通のIOT設計で
は不可能である。2. Description of the Related Art The present invention relates to Christ Road (Varian
It is particularly applicable to inductive power tetrode devices (IOTs) such as Associates®. Inductive output tetrodes (hereinafter abbreviated as IOT) are well known, but previously proposed designs have been designed for the entire frequency range of television (eg
In order to obtain the required instantaneous bandwidth (for example 8 MHz) over 70-860 MHz, it is necessary to use several tubes, each tube having to be used with several different cavities. there were. Nowadays, in the case of klystrons, this requirement is met by staggering the various cavities arranged along the electron beam path and adding the output of different frequencies to obtain the required bandwidth. There is. However, this is not possible with normal IOT designs.
【0003】特に入力空洞がIOTの外側部分となる可
能性があるので、陰極及び格子に印加しなければならな
い30kV程度の高電圧がもたらす別の問題も通常の使用
に際して留意すべきであろう。Another problem caused by high voltages of the order of 30 kV, which must be applied to the cathode and the grid, should also be noted in normal use, especially since the input cavity can be the outer part of the IOT.
【0004】[0004]
【発明の概要】本発明は、IOTをテレビジョン応用に
適するように保ちつつ、陰極及び格子電圧を高く維持す
ることに伴う問題の若干もしくは全てを排除乃至は軽減
する装置を提供する。本発明による電子ビーム管配列
は、内部ボディ部分と外部ボディ部分とによって少なく
とも部分的に限定される共振空洞を具備し、内部ボディ
部分が外部ボディ部分に対して高電圧に維持され、両ボ
ディ部分がそれらの間に導電接続を有していないことを
特徴とする。SUMMARY OF THE INVENTION The present invention provides an apparatus that eliminates or alleviates some or all of the problems associated with maintaining high cathode and grid voltages while keeping the IOT suitable for television applications. The electron beam tube arrangement according to the present invention comprises a resonant cavity at least partially defined by an inner body portion and an outer body portion, the inner body portion being maintained at a high voltage with respect to the outer body portion, Have no conductive connection between them.
【0005】“高電圧”とは数十kV程度の電圧を意味す
る。本発明をIOT装置に関して説明するが、クライス
トロンのような入力共振空洞を有する他の形の電子ビー
ム管配列にも適用できることは明白である。典型的には
外部ボディ部分は極めて低い電圧にあり、通常は接地さ
れる。両ボディ部分は、モールドすることが有利な誘電
性絶縁体部分によって互に物理的に結合することが好ま
しい。両ボディ部分には、両ボディ部分の結合を援助す
るための相互に係合し合う手段も設けることができる。
これらの手段は、直流に対しては極めてたかいインピー
ダンスの通路に限定して外部ボディ部分と内部ボディ部
分との間に所要電圧差を維持可能ならしめる一方で、高
周波に対しては結合個処で極めて低いインピーダンスを
呈して高周波が空洞から漏洩するのを阻止するような寸
法とすることが有利である。"High voltage" means a voltage of about several tens of kV. Although the present invention is described with respect to an IOT device, it will be apparent that it is applicable to other forms of electron beam tube arrangements having an input resonant cavity such as a klystron. The outer body portion is typically at a very low voltage and is usually grounded. Both body parts are preferably physically connected to each other by a dielectric insulator part, which is advantageous to mold. Both body parts may also be provided with interengaging means to assist in joining the body parts.
These means make it possible to maintain the required voltage difference between the outer body part and the inner body part by limiting the path of extremely high impedance to direct current, while at the coupling part to high frequencies. It is advantageous to dimension so that it exhibits a very low impedance and prevents high frequencies from leaking out of the cavity.
【0006】電気接続を、空洞の外側と内部ボディ部分
との間の絶縁体材料を通して設けることが好ましいであ
ろう。入力共振空洞が一次空洞であり、この一次空洞に
結合されている二次共振空洞を含むことが有利である。
これらの空洞はそれぞれ異なる周波数に同調させ、1つ
の空洞だけを使用する場合よりも大きい帯域幅で使用可
能ならしめることが好ましい。It would be preferable to provide electrical connections through an insulator material between the outside of the cavity and the inner body portion. Advantageously, the input resonant cavity is a primary cavity and comprises a secondary resonant cavity coupled to this primary cavity.
It is preferred that each of these cavities be tuned to a different frequency to allow for greater bandwidth usage than if only one cavity were used.
【0007】一次空洞及び二次空洞の共振周波数は同調
可能である。同調は独立的に行ってもよいし、また例え
ば一方の空洞の共振周波数を変化させた時他方の空洞の
共振周波数が相応に変化するようにリンクさせてもよ
い。一次空洞の容積を外部ボディ部分に含まれている手
段によって変化させ、共振周波数を調整することができ
る。The resonant frequencies of the primary and secondary cavities are tunable. The tuning may be done independently, or may be linked, for example, such that changing the resonant frequency of one cavity causes the resonant frequency of the other cavity to change accordingly. The volume of the primary cavity can be varied by means included in the outer body portion to tune the resonant frequency.
【0008】以下に添附図面に基づいて本発明の実施例
を説明する。An embodiment of the present invention will be described below with reference to the accompanying drawings.
【0009】[0009]
【実施例】第1図に示すIOTは陰極12及び格子14
と組合わせた電子銃10、及びドリフト管18、20と
組合わせた出力区分16を具備する。電子銃10、陰極
12、及び格子14を含む入力組立体は一次入力空洞2
2によって取り囲まれている。一次入力空洞22は出力
結合器26を有する二次入力空洞24に結合されてい
る。出力区分16は一次出力空洞28によって取り囲ま
れ、一次出力空洞28は出力結合器32を有する二次出
力空洞30に結合されている。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT The IOT shown in FIG.
And an output section 16 in combination with drift tubes 18, 20. The input assembly including the electron gun 10, the cathode 12 and the grid 14 is the primary input cavity 2
Surrounded by two. The primary input cavity 22 is coupled to a secondary input cavity 24 having an output coupler 26. The output section 16 is surrounded by a primary output cavity 28, which is coupled to a secondary output cavity 30 having an output coupler 32.
【0010】使用中は陰極12と格子14との間には数
百Vの高周波電圧が発生し、また両者は約30kVに保た
れる。また格子14には陰極12に対して負の数百V程
度の直流バイアス電圧を維持する必要もある。詳述すれ
ば本発明は図示した装置の一次入力空洞22に関する。
内部ボディ部分40は上側環状金属板70及び下側環状
金属板71を含お、これらの金属板は誘電材料73によ
って離間されて環状チャネルを限定している。上側板7
0は陰極12に電気的に接続され、下側板71は格子1
4に電気的に接続されている。このチャネルの開放部分
は外側に向いており、金属外部ボディ部分42を含む別
の環状チャネルの開放部分を取り囲んでいる(入力空洞
22は部分40と42とによって限定されている)。During use, a high frequency voltage of several hundred volts is generated between the cathode 12 and the grid 14, and both are maintained at about 30 kV. Further, it is necessary to maintain a negative DC bias voltage of about several hundreds V with respect to the cathode 12 in the grid 14. More particularly, the invention relates to the primary input cavity 22 of the illustrated device.
The inner body portion 40 includes an upper annular metal plate 70 and a lower annular metal plate 71, which are separated by a dielectric material 73 to define an annular channel. Upper plate 7
0 is electrically connected to the cathode 12 and the lower plate 71 is the grid 1
4 is electrically connected. The open portion of this channel faces outward and surrounds the open portion of another annular channel that includes the metallic outer body portion 42 (the input cavity 22 is defined by portions 40 and 42).
【0011】角付きフランジ44、46が外部ボディ部
分42の両側に設けられていて別の環状チャネル48、
50を限定している。これらのチャネルの中に内部ボデ
ィ部分40の自由縁が突出ている。しかし内部ボディ部
分40の何れかの部分と、外部ボディ部分42の何れか
の部分と、フランジ44、46との間には直接的な電気
接触は存在せず、これらの間には絶縁用誘電材料52が
モールドされている。これは外部ボディ部分42を内部
ボディ部分40から、従って使用中に印加される極めて
高い電圧から絶縁するのに役立つ。誘電体52の使用に
よってボディ部分40、42を電気的に絶縁する一方
で、誘電体52を通して高周波漏洩用の潜在的通路が形
成される。従って、部分40、42の重なり合う通路の
寸法は高周波に対して極めて低いインピーダンスを呈す
るように選択し、できる限り多くの高周波漏洩を阻止す
るようにする。Angled flanges 44,46 are provided on opposite sides of the outer body portion 42 to provide additional annular channels 48,
Limited to 50. The free edges of the inner body portion 40 project into these channels. However, there is no direct electrical contact between any portion of the inner body portion 40, any portion of the outer body portion 42, and the flanges 44, 46, and there is an insulating dielectric between them. The material 52 is molded. This serves to insulate the outer body portion 42 from the inner body portion 40 and thus from the very high voltages applied during use. The use of the dielectric 52 electrically insulates the body portions 40, 42 while forming a potential path for high frequency leakage through the dielectric 52. Therefore, the dimensions of the overlapping passages of the portions 40, 42 should be chosen to present a very low impedance to high frequencies to prevent as much high frequency leakage as possible.
【0012】空洞22の容量、従って共振周波数は、例
えば94に示すような同調用ドアの使用による普通の技
法で変化させることができる。一次入力空洞22の変形
を図2に示す。この例では外部ボディ部分42は軸方向
に伸びて細長い環状領域90を形成している(この領域
はボディ部分の伸ばされた円筒形壁91.92によって限
定される)。領域90の実効容量は、適当な手段によっ
て軸方向に移動させることができる滑り板93によって
変化させることができる。The capacitance of the cavity 22, and thus the resonant frequency, can be varied by conventional techniques, such as by using a tuning door as shown at 94. A modification of the primary input cavity 22 is shown in FIG. In this example, the outer body portion 42 extends axially to form an elongated annular region 90 (which region is defined by the elongated cylindrical wall 91.92 of the body portion). The effective capacity of the region 90 can be varied by means of a sliding plate 93 which can be moved axially by any suitable means.
【0013】図面では誘電体は滑らかであるとして示し
てあるが、例えば縁にぎざを付けたりみぞを設ける等、
表面を形作ることによって耐電圧能力を更に改善するこ
とができる。電力リード54は、格子14を適切なバイ
アス電圧に維持しながら外部ボディ部分42の電気絶縁
を維持するために誘電体52を通して導びかれる。接続
はリード54と板71との間で行われる。Although the dielectric is shown as smooth in the drawings, it may have, for example, a knurled edge or a groove.
The withstand voltage capability can be further improved by shaping the surface. Power leads 54 are conducted through the dielectric 52 to maintain the electrical insulation of the outer body portion 42 while maintaining the grid 14 at the proper bias voltage. The connection is made between the lead 54 and the plate 71.
【0014】一次入力空洞22の内部は結合用ループ6
0、62によって二次入力空洞24にリンクされる。二
次入力空洞24の内部容積、従ってその共振周波数は穴
部材66から突出る可動プランジャ64によって調整可
能である。本発明のこの実施例では一次空洞22と二次
空洞24の容積が独立的に可変であるが、両者を一諸に
動かすようにリンクしてもよい。一次空洞22及び二次
空洞24は、それぞれ異なる共振周波数を有するように
なっている。Inside the primary input cavity 22 is a coupling loop 6
0, 62 linked to the secondary input cavity 24. The internal volume of the secondary input cavity 24, and thus its resonance frequency, can be adjusted by a movable plunger 64 projecting from the hole member 66. In this embodiment of the invention, the volumes of the primary cavity 22 and the secondary cavity 24 are independently variable, but they may be linked to move together. The primary cavity 22 and the secondary cavity 24 have different resonance frequencies.
【0015】IOTの出力端においては一次出力空洞2
8が出力区分16を取り囲み、該空洞は普通の技法で同
調可能である。空洞28は結合用ループ80によって二
次出力空洞30に結合されている。二次空洞30への接
続は、その内壁に設けられたドーム構造82を含む。二
次空洞30の同調は普通の技法で行うことができる。図
3は本発明の別の実施例であって、この配列内には1つ
の入力空洞だけが含まれている。この特定配列の入力空
洞は図2に示すものと類似している。At the output of the IOT, the primary output cavity 2
8 surrounds the output section 16 and the cavity is tunable in the usual way. Cavity 28 is coupled to secondary output cavity 30 by coupling loop 80. The connection to the secondary cavity 30 includes a dome structure 82 provided on its inner wall. Tuning the secondary cavity 30 can be done by conventional techniques. FIG. 3 is another embodiment of the invention in which only one input cavity is included in the array. The input cavity of this particular array is similar to that shown in FIG.
【図1】本発明によるIOTの側断面図であって、明瞭
化のために一部を省略してあり、1 is a side cross-sectional view of an IOT according to the present invention, some of which have been omitted for clarity,
【図2】一次入力空洞の変形例を示し、FIG. 2 shows a modification of the primary input cavity,
【図3】本発明による別の実施例を示す。FIG. 3 shows another embodiment according to the present invention.
10 電子銃 12 陰極 14 格子 16 出力区分 18、20 ドリフト管 22 一次入力空洞 24 二次入力空洞 26 出力結合器 28 一次出力空洞 30 二次出力空洞 32 出力結合器 40 内部ボディ部分 42 外部ボディ部分 44、46 角付きフランジ 48、50 環状チャネル 52 絶縁用誘電材料 54 電力リード 60、62 結合用ループ 64 プランジヤ 66 穴部材 70 上側環状金属板 71 下側環状金属板 73 誘電材料 80 結合用ループ 82 ドーム構造 90 環状領域 91、92 ボディ部分42の壁 93 滑り板 94 同調用ドア 10 Electron Gun 12 Cathode 14 Lattice 16 Output Sections 18, 20 Drift Tube 22 Primary Input Cavity 24 Secondary Input Cavity 26 Output Coupler 28 Primary Output Cavity 30 Secondary Output Cavity 32 Output Coupler 40 Inner Body Part 42 Outer Body Part 44 , 46 Square flanges 48, 50 Annular channel 52 Insulation dielectric material 54 Power leads 60, 62 Coupling loop 64 Plunger 66 Hole member 70 Upper annular metal plate 71 Lower annular metal plate 73 Dielectric material 80 Coupling loop 82 Dome structure 90 Annular region 91, 92 Wall of body part 42 93 Sliding plate 94 Tuning door
───────────────────────────────────────────────────── フロントページの続き (72)発明者 マーク ブリツジーズ イギリス エセツクス シーエム2 8ワ イエイチチエルムスフオード ガリーウツ ド シヤーピングトン クローズ 19 (72)発明者 エドワード スタニスラウ ソビエラズキ ー イギリス チエルムスフオード グレート バドードーシツト アベニユー 38 (72)発明者 ステイーヴン バーデル イギリス エセツクス シーエム6 1エ ヌエフ バーンストン ハイ イースター ロード ビシヨツプス グリーン 3 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Mark Britzsey's United Kingdom Essex's C2 28 WHICH ELMS FOOD Garry Wouts de Sheerpington Close 19 (72) Inventor Edward Stanislaus Sovier AZKI British CHERMSFOOD Great Badordo Sit Avenyu 38 ( 72) Inventor Stephen Badell United Kingdom Essets CM 61 Nef Burnston High Easter Road Bissyops Green 3
Claims (22)
って少なくとも部分的に限定される共振空洞を具備し、
内部ボディ部分を外部ボディ部分に対して高電圧に維持
し、両ボディ部分の間に導電接続を設けていないことを
特徴とする電子ビーム管配列。1. A resonant cavity at least partially defined by an inner body portion and an outer body portion,
An electron beam tube arrangement characterized in that the inner body part is maintained at a high voltage with respect to the outer body part and no conductive connection is provided between both body parts.
求項1に記載の配列。2. The array of claim 1, wherein the outer body portion has a relatively low voltage.
載の配列。3. The array of claim 2, wherein the outer body portion is grounded.
て互に物理的に結合してある先行請求項の何れかに記載
の配列。4. The arrangement according to claim 1, wherein both body parts are physically connected to each other by a dielectric insulator part.
縁体部分を通して電気接続を設けてある請求項4に記載
の配列。5. The array of claim 4, wherein an electrical connection is provided through an insulator portion between the outside of the cavity and the inner body portion.
子銃を取り囲ませてある先行請求項の何れかに記載の配
列。6. The arrangement according to claim 1, wherein the resonant cavity has a substantially annular cross section and surrounds the electron gun.
も半径方向に大きい広がりを持たせた請求項6に記載の
配列。7. The array of claim 6 wherein one portion of the resonant cavity has a greater radial extent than another portion of the resonant cavity.
方の部分よりも大きく伸ばしてある請求項7に記載の配
列。8. The array of claim 7, wherein the other portion extends more than one portion in a direction perpendicular to the annular radius.
ボディ部分の結合が高周波に対して極めて低いインピー
ダンスを呈して空洞からの高周波漏洩を禁止するような
寸法とした先行請求項の何れかに記載の配列。9. A method according to any one of the preceding claims, wherein both body parts are interleaved with each other and the coupling of both body parts presents a very low impedance to high frequencies to prevent high frequency leakage from the cavity. Sequence described in.
円板と、外部ボディ部分から広がり且つ第1の環状円板
に重なり合う第2及び第3の環状円板とによって両ボデ
ィ部分を相互に交互配置し、第2の円板と第1の円板と
の間の領域及び第1の円板と第3の円板との間の領域に
高電圧に耐え得る誘電材料を充填してある請求項9に記
載の配列。10. Both body parts alternate with each other by a first annular disc extending from the inner body part and second and third annular discs extending from the outer body part and overlapping the first annular disc. And a region between the second disc and the first disc and a region between the first disc and the third disc are filled with a dielectric material capable of withstanding a high voltage. The sequence according to Item 9.
定する請求項7または8に従属した時の請求項10に記
載の配列。11. The arrangement according to claim 10, when dependent on claim 7 or 8, wherein the further part is defined by an outer body part.
せる手段を含ませた先行請求項の何れかに記載の配列。12. Arrangement according to any of the preceding claims, wherein the outer body part comprises means for varying the volume of the cavity.
次共振空洞に結合されている二次共振空洞を含む先行請
求項の何れかに記載の配列。13. An array according to any of the preceding claims, wherein the input resonant cavity is the primary cavity and includes a secondary resonant cavity coupled to the primary resonant cavity.
る周波数に同調させる請求項13に記載の配列。14. The array of claim 13, wherein the primary cavity and the secondary cavity are tuned to different frequencies.
けられているループによって結合し、これらのループを
互に電気的に接続してある請求項13または14に記載
の配列。15. The arrangement according to claim 13, wherein the primary cavity and the secondary cavity are connected by a loop provided in each cavity and the loops are electrically connected to each other.
ループの運動によって結合度を制御可能とした請求項1
5に記載の配列。16. The loop is movable, and the coupling degree can be controlled by the movement of one or both loops.
The sequence described in 5.
た請求項13乃至16の何れかに記載の配列。17. The array according to claim 13, wherein the resonance frequency of the primary cavity is tunable.
た請求項13乃至17の何れかに記載の配列。18. The array according to claim 13, wherein the resonance frequency of the secondary cavity is tunable.
洞内に突出て二次空洞の容積を変化させるようになって
いるプランジャによって調整する請求項18に記載の配
列。19. The array of claim 18, wherein the resonant frequency of the secondary cavity is adjusted by a plunger adapted to project from the hole into the secondary cavity to change the volume of the secondary cavity.
て調整する請求項19に記載の配列。20. The arrangement according to claim 19, wherein the position of the plunger is adjusted by an adjusting screw.
能とした請求項17乃至20の何れかに記載の配列。21. The array according to claim 17, wherein the primary cavity and the secondary cavity are independently tunable.
る先行請求項の何れかに記載の配列。22. An arrangement according to any of the preceding claims, wherein the electron beam tube is an inductive power tetrode.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB909005382A GB9005382D0 (en) | 1990-03-09 | 1990-03-09 | Electron beam tube with coupled input cavities |
GB90053828 | 1990-03-09 | ||
GB909005380A GB9005380D0 (en) | 1990-03-09 | 1990-03-09 | Electron beam tube with input cavity |
GB90053802 | 1990-03-09 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0582034A true JPH0582034A (en) | 1993-04-02 |
JP3075753B2 JP3075753B2 (en) | 2000-08-14 |
Family
ID=26296767
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP03041580A Expired - Lifetime JP3075753B2 (en) | 1990-03-09 | 1991-03-07 | Electron beam tube with input cavity |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP3075753B2 (en) |
DE (1) | DE4107552C2 (en) |
FR (1) | FR2660796B1 (en) |
GB (1) | GB2243943B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5841335A (en) * | 1994-04-26 | 1998-11-24 | Matsushita Electric Industrial Co., Ltd. | Choke coil |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2277194B (en) * | 1993-04-13 | 1996-05-22 | Eev Ltd | Electron beam tubes |
GB2277193B (en) * | 1993-04-13 | 1996-05-22 | Eev Ltd | Electron beam tubes |
GB2259708B (en) * | 1991-09-18 | 1995-05-10 | Eev Ltd | RF radiation absorbing material |
GB2278012B (en) * | 1993-05-11 | 1997-01-08 | Eev Ltd | Electron beam tubes |
IT1273140B (en) * | 1993-04-13 | 1997-07-04 | Eev Ltd | LINEAR ELECTRONIC BEAM TUBE |
US5572092A (en) * | 1993-06-01 | 1996-11-05 | Communications And Power Industries, Inc. | High frequency vacuum tube with closely spaced cathode and non-emissive grid |
GB2308730B (en) * | 1993-06-28 | 1997-12-03 | Eev Ltd | Electron beam tubes |
GB9313265D0 (en) * | 1993-06-28 | 1993-08-11 | Eev Ltd | Electron beam tubes |
US6380803B2 (en) | 1993-09-03 | 2002-04-30 | Litton Systems, Inc. | Linear amplifier having discrete resonant circuit elements and providing near-constant efficiency across a wide range of output power |
GB9322934D0 (en) * | 1993-11-08 | 1994-01-26 | Eev Ltd | Linear electron beam tube arrangements |
DE4340550A1 (en) * | 1993-11-29 | 1995-06-01 | Philips Patentverwaltung | Electron tube with an input resonator cavity |
GB9420606D0 (en) * | 1994-10-12 | 1994-11-30 | Eev Ltd | Electron beam tubes |
DE69506073T2 (en) * | 1994-10-12 | 1999-04-15 | Eev Ltd | Electron tube |
US6191651B1 (en) | 1998-04-03 | 2001-02-20 | Litton Systems, Inc. | Inductive output amplifier output cavity structure |
US6617791B2 (en) | 2001-05-31 | 2003-09-09 | L-3 Communications Corporation | Inductive output tube with multi-staged depressed collector having improved efficiency |
US7145297B2 (en) | 2004-11-04 | 2006-12-05 | Communications & Power Industries, Inc. | L-band inductive output tube |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2610307A (en) * | 1940-07-02 | 1952-09-09 | Univ Leland Stanford Junior | Tunable cavity resonator electron discharge device |
US2642533A (en) * | 1950-07-31 | 1953-06-16 | Eitel Mccullough Inc | Radio-frequency generator |
DE1251832B (en) * | 1965-04-21 | |||
DE1945826C3 (en) * | 1969-09-10 | 1973-10-04 | Siemens Ag, 1000 Berlin U. 8000 Muenchen | Concentric two-chamber klystron |
DE2963493D1 (en) * | 1978-09-06 | 1982-09-30 | Emi Varian Ltd | An output section for a microwave amplifier, a microwave amplifier and a circuit for use in a microwave amplifier |
DE3317788A1 (en) * | 1983-05-16 | 1984-11-22 | Siemens AG, 1000 Berlin und 8000 München | CLYSTRODE WITH HIGH REINFORCEMENT |
US4527091A (en) * | 1983-06-09 | 1985-07-02 | Varian Associates, Inc. | Density modulated electron beam tube with enhanced gain |
-
1991
- 1991-03-07 GB GB9104850A patent/GB2243943B/en not_active Expired - Fee Related
- 1991-03-07 JP JP03041580A patent/JP3075753B2/en not_active Expired - Lifetime
- 1991-03-08 FR FR9102864A patent/FR2660796B1/en not_active Expired - Lifetime
- 1991-03-08 DE DE19914107552 patent/DE4107552C2/en not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5841335A (en) * | 1994-04-26 | 1998-11-24 | Matsushita Electric Industrial Co., Ltd. | Choke coil |
US6014071A (en) * | 1994-04-26 | 2000-01-11 | Matsushita Electric Industrial Co., Ltd. | Choke coil |
Also Published As
Publication number | Publication date |
---|---|
GB2243943B (en) | 1994-02-09 |
DE4107552A1 (en) | 1991-09-12 |
GB9104850D0 (en) | 1991-04-17 |
DE4107552C2 (en) | 1996-07-18 |
FR2660796B1 (en) | 1997-08-22 |
GB2243943A (en) | 1991-11-13 |
JP3075753B2 (en) | 2000-08-14 |
FR2660796A1 (en) | 1991-10-11 |
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