JPH057687B2 - - Google Patents
Info
- Publication number
- JPH057687B2 JPH057687B2 JP57046084A JP4608482A JPH057687B2 JP H057687 B2 JPH057687 B2 JP H057687B2 JP 57046084 A JP57046084 A JP 57046084A JP 4608482 A JP4608482 A JP 4608482A JP H057687 B2 JPH057687 B2 JP H057687B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- subject
- receiving surface
- type semiconductor
- transmission window
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000003287 optical effect Effects 0.000 claims description 29
- 230000005540 biological transmission Effects 0.000 claims description 9
- 238000003384 imaging method Methods 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 description 25
- 238000001514 detection method Methods 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 239000011521 glass Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 4
- 238000005253 cladding Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B3/00—Focusing arrangements of general interest for cameras, projectors or printers
- G03B3/10—Power-operated focusing
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Testing Of Optical Devices Or Fibers (AREA)
- Automatic Focus Adjustment (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Description
【発明の詳細な説明】
本発明は、受光面に合焦検出用の透過窓を有
し、透過窓部の側部を蔽光部材又は該遮光部材と
同等の機能を有する部材を配設することにより、
暗電流成分を少くして合焦検出を精度よく行い得
る光センサに関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention has a transmission window for focus detection on the light receiving surface, and a light shielding member or a member having the same function as the light shielding member is disposed on the side of the transmission window. By this,
The present invention relates to an optical sensor that can accurately detect focus by reducing dark current components.
一般に、内視鏡，カメラ，テレビカメラ等の光
学観察装置及び光学撮影装置においては、被写体
を鮮明に撮影（観察も含めて用いている。）でき
るように、任意の被写体距離に対し、装置の撮影
用あるいは結像用光学系の結像位置がフイルム面
等の結像面に鮮明に結像している合焦状態にある
か否かを検出できる合焦検出手段が広く設けられ
ている。 Generally, in optical observation devices and optical photographing devices such as endoscopes, cameras, and television cameras, the device is 2. Description of the Related Art Focus detection means are widely used to detect whether or not the imaging position of an optical system for photographing or imaging is in a focused state in which an image is clearly formed on an imaging surface such as a film surface.
従来の合焦検出装置は、被写体が暗い場合ある
いは暗い撮影光学系を使用する場合においては、
一般に受光素子による検出出力が小さくなり、焦
点検出が殆んど不可能になる場合がある。 Conventional focus detection devices have problems when the subject is dark or when using a dark photographic optical system.
Generally, the detection output of the light receiving element becomes small, and focus detection may become almost impossible.
このため、特公昭49−19810号公報に開示され
ているように、一定形状のビームを被写体に向け
て照射する手段を設けたものがあるが、照射手段
を撮影レンズ系とは独立した光学系を使用してい
るため、一つの光路で撮影を行なわなければなら
ない内視鏡等には応用し難い。 For this reason, as disclosed in Japanese Patent Publication No. 49-19810, some devices are equipped with a means for irradiating a beam of a certain shape toward the subject, but the irradiation means is an optical system independent of the photographic lens system. Because it uses a single optical path, it is difficult to apply it to endoscopes and the like that require imaging using a single optical path.
又特開昭56−128923号公報に開示されているよ
うにスプリツトプリズムを使用する手段において
は、一定レベル以上の精度を必要とする場合に
は、前記受光素子を多数配設すると共に、それら
の出力信号を比較して合焦か否かを検出する回路
系が複雑となり、特に生産数の少ない製品におい
ては、高価となるという問題がある。 In addition, in the means using a split prism as disclosed in Japanese Patent Application Laid-Open No. 56-128923, when accuracy above a certain level is required, a large number of the light receiving elements are arranged and The problem is that the circuit system that compares the output signals of the two and detects whether or not the camera is in focus is complicated and expensive, especially in products that are manufactured in small numbers.
さらに特開昭56−125713号公報に開示されてい
るように、光源を点滅して被写体に投光し、消灯
区間における出力信号を点灯区間における出力信
号から差し引くことにより、上記光源以外の外光
の影響を軽減し、被写体が暗い場合、及び暗い撮
影光学系の場合においても、合焦か否かを検出で
きる合焦検出装置があるが、構成が複雑となるた
め、この装置を設けた装置が高価になるという問
題がある。 Furthermore, as disclosed in Japanese Patent Application Laid-Open No. 56-125713, by flashing a light source and projecting light onto the subject, and subtracting the output signal in the off section from the output signal in the on section, external light other than the above light source can be detected. There is a focus detection device that can reduce the influence of the camera and detect whether or not it is in focus even when the subject is dark or the photographic optical system is dark, but since the configuration is complicated, it is difficult to use a device equipped with this device. The problem is that it is expensive.
本発明は上述した点に鑑みてなされたもので、
任意の距離にある被写体からの光を撮影光学系を
経てフイルム面等の結像面と共役となる位置近傍
に配設される合焦検出用の光センサにおいて、被
写体側に投光される合焦検出用の開口部の側壁に
遮光部材を配設したり、開口部に嵌入される透明
部材の側部表面に遮光膜を形成したりすることに
より、投光用の光源の光が直接受光面に入射しな
いようにしたり、合焦状態における光が開口部側
部から受光面に漏れないようにして暗電流成分を
少くし、合焦検出を精度良く行い得る光センサを
提供することを目的とする。 The present invention has been made in view of the above points, and
Light from a subject at an arbitrary distance passes through the photographing optical system, and then an optical sensor for focus detection is placed near a position that is conjugate with the image forming plane such as the film surface. By providing a light shielding member on the side wall of the focus detection opening or forming a light shielding film on the side surface of the transparent member fitted into the opening, the light from the light source for projection can be directly received. It is an object of the present invention to provide an optical sensor that can accurately detect focus by reducing dark current components by preventing light from entering a surface and preventing light from leaking from the side of an opening to a light-receiving surface in a focused state. shall be.
以下図面を参照して本発明を具体的に説明す
る。 The present invention will be specifically described below with reference to the drawings.
第１図及び第２図は本発明の第１実施例に係
り、第１図は第１実施例を示し、第２図はレンズ
の位置に対して第１実施例の出力特性を示す特性
図である。 1 and 2 relate to a first embodiment of the present invention, FIG. 1 shows the first embodiment, and FIG. 2 is a characteristic diagram showing the output characteristics of the first embodiment with respect to the position of the lens. It is.
第１図において撮影用又は結像用のレンズ１は
被写体２を（図示しない）フイルム面等所定の結
像面に結像するよう構成されており、上記所定の
結像面と共役となる光軸３上の位置４には第１実
施例の光センサ５が配設されている。 In FIG. 1, a photographing or imaging lens 1 is configured to image a subject 2 on a predetermined image plane such as a film surface (not shown), and is configured to focus light that is conjugate to the predetermined image plane. At a position 4 on the shaft 3, an optical sensor 5 of the first embodiment is arranged.
上記光センサ５は前面がＰ形半導体６とされ、
円盤状のＰ形半導体６の裏面側及び側周を覆うよ
うにＮ形半導体７を接合してPN接合面に光が照
射されると、その照射された光量に応じて光電流
が流れる受光面が形成され（図示してないが、通
常PN接合面にはＰ形半導体６側が負となるよう
に抵抗を介して逆バイアスされ、該抵抗両端が出
力端とされたり、抵抗を流れる電流値を検出ある
いは増幅して出力電流とされたりする。）、さらに
Ｎ形半導体７の裏面は遮光を兼ねる金属等を用い
た基板８に接着剤等で取り付けられている。 The optical sensor 5 has a P-type semiconductor 6 on the front surface,
When an N-type semiconductor 7 is bonded to cover the back side and side circumference of a disk-shaped P-type semiconductor 6 and light is irradiated to the PN junction surface, a light-receiving surface where a photocurrent flows according to the amount of the irradiated light. (Although not shown, the PN junction surface is usually reverse biased through a resistor so that the P-type semiconductor 6 side is negative, and both ends of the resistor are used as output terminals, or the current value flowing through the resistor is Furthermore, the back surface of the N-type semiconductor 7 is attached with an adhesive or the like to a substrate 8 made of metal or the like which also serves as a light shield.
上記PN接合面の中央を通り、その裏面側の基
板８を貫ぬく透孔９には、例えば0.1mm以下の薄
肉で遮光性のパイプ１０が嵌装され、該パイプ１
０には透明なガラス棒１１が嵌入されている。上
記パイプ１０によつて透孔９の側部側から光が受
光面に漏れるのが防止されている。 A light-shielding pipe 10 with a thin wall of, for example, 0.1 mm or less is fitted into a through hole 9 passing through the center of the PN joint surface and penetrating the substrate 8 on the back side thereof.
A transparent glass rod 11 is fitted into the hole. The pipe 10 prevents light from leaking from the side of the through hole 9 to the light receiving surface.
上記パイプ１０は、透孔９側部にＰ形半導体６
及びＮ形半導体７が露呈する場合にはPN接合面
と短絡しない絶縁性部材で形成されたり、絶縁性
部材を外周面に塗布あるいはコーテイングした導
電性部材で形成される。一方、透孔９側部にＮ形
半導体７層（又はＰ形半導体６層）のみの場合に
は導電性部材を用いることができる（これは他の
実施例についても同様である。）
このように構成された光センサ５は、合焦検出
に使用される場合上記ガラス棒１１の中心軸が光
軸３上に位置し、上記PN接合面の（光軸３上に
おける）位置が結像面と共役となる位置４となる
よう配設され、上記ガラス棒１１後方の光軸３上
に合焦検出用に被写体２側に投光される光源１２
が配設される。 The pipe 10 has a P-type semiconductor 6 on the side of the through hole 9.
When the N-type semiconductor 7 is exposed, it is formed of an insulating material that does not short-circuit with the PN junction surface, or it is formed of a conductive material whose outer peripheral surface is coated or coated with an insulating material. On the other hand, if there are only seven N-type semiconductor layers (or six P-type semiconductor layers) on the side of the through hole 9, a conductive member can be used (this also applies to other embodiments). When the optical sensor 5 configured as shown in FIG. A light source 12 is disposed at a position 4 that is conjugate with , and projects light onto the optical axis 3 behind the glass rod 11 toward the subject 2 for focus detection.
will be placed.
上記第１実施例の動作は次のようになる。 The operation of the first embodiment is as follows.
光源１２の光は第１実施例の光センサ５の透孔
９に嵌装されたパイプ１０にさらに嵌装されたガ
ラス棒１１を通り、ガラス棒１１前面から撮影用
レンズ１を経て前方の被写体２側に投光される。
被写体２に投光された光は、その一部が該被写体
２で反射された再びレンズ１を経て光センサ５側
に戻る。この場合被写体２に対してレンズ１が合
焦状態又は合焦位置にあれば、上記の反射光の結
像位置は細い実線で示すように所定の結像面と共
役な位置４となるので、PN接合で形成された受
光面には光が届かず、光センサ５のＰ形半導体６
及びＮ型半導体７間には殆んど電流が流れず殆ん
ど零である。 The light from the light source 12 passes through the glass rod 11 further fitted into the pipe 10 fitted into the through hole 9 of the optical sensor 5 of the first embodiment, and passes from the front of the glass rod 11 through the photographing lens 1 to the subject in front. Light is projected onto the second side.
A portion of the light projected onto the subject 2 is reflected by the subject 2, passes through the lens 1 again, and returns to the optical sensor 5 side. In this case, if the lens 1 is in a focused state or in a focused position with respect to the subject 2, the image formation position of the reflected light will be a position 4 conjugate with the predetermined image formation plane, as shown by the thin solid line. No light reaches the light-receiving surface formed by the PN junction, and the P-type semiconductor 6 of the optical sensor 5
Almost no current flows between the N-type semiconductor 7 and the N-type semiconductor 7, and the current is almost zero.
一方、上記被写体２に対し、例えばレンズ１が
符号１′で示すように合焦位置から前方にずれて
いる場合には、被写体２で反射された光は受光面
より前方の位置ですでに収束点となり、その後拡
開するので受光面に光が達することになる。従つ
て、光センサ５のＰ形半導体６層及びＮ形半導体
７間には上記受光面に入射された光量に応じた光
電流が流れることになる。 On the other hand, when the lens 1 is shifted forward from the in-focus position with respect to the subject 2, as shown by reference numeral 1', the light reflected by the subject 2 is already converged at a position in front of the light receiving surface. It becomes a point and then expands, allowing the light to reach the light receiving surface. Therefore, a photocurrent flows between the P-type semiconductor 6 layer and the N-type semiconductor 7 of the optical sensor 5 in accordance with the amount of light incident on the light receiving surface.
上記とは逆にレンズ１が合焦位置から後方にず
れた場合には、集光する位置は受光面より後方位
置となるので、この場合にも受光面に光が届き、
その光量に応じた光電流が流れることになる。 Contrary to the above, if the lens 1 shifts backward from the in-focus position, the condensing position will be behind the light-receiving surface, so in this case as well, the light will reach the light-receiving surface.
A photocurrent corresponding to the amount of light will flow.
従つて、第２図に示すように合焦位置X0の時、
光センサ５の出力端間は暗電流と呼ばれる最小
（極小）の光電流I0となり、この合焦状態からず
れると、例えば第１図のレンズ１′の位置X′にお
いてはその時の光電流I′で示すように受光面を照
らす光量に応じた（暗電流I0より大きい）光電流
が流れることになる。 Therefore, as shown in Fig. 2, when the focus position is X 0 ,
Between the output ends of the optical sensor 5, there is a minimum (minimum) photocurrent I 0 called a dark current, and when it deviates from this in-focus state, for example, at the position X' of the lens 1' in Fig. 1, the photocurrent I at that time As shown by ′, a photocurrent (larger than the dark current I 0 ) flows according to the amount of light illuminating the light-receiving surface.
上記第１実施例においては、投光される場合透
孔９の側部周面を覆うように遮光性のパイプ１０
が嵌装されているので、光源１２による光が被写
体２側に投光される以前に直接PN接合面に入射
されることは殆ど完全に防止されるので、上記パ
イプ１０が設けられてない場合に比べ大幅に改善
されて第２図に示すように暗電流I0の値は殆んど
零となる。従つて出力電流のレベルから合焦か否
かの検出が容易になる。 In the first embodiment, the light-shielding pipe 10 covers the side peripheral surface of the through hole 9 when light is projected.
Since the pipe 10 is fitted, the light from the light source 12 is almost completely prevented from being directly incident on the PN junction surface before it is projected onto the subject 2. Therefore, in the case where the pipe 10 is not provided, As shown in FIG. 2, the value of the dark current I 0 becomes almost zero. Therefore, it becomes easy to detect whether or not the object is in focus based on the level of the output current.
尚、上記第１実施例において、ガラス棒１１又
は透明な棒部材を設けない場合においても略同様
に機能することになる。又、Ｐ形半導体６とＮ形
半導体７とを入れかえて形成しても良い（この場
合には前記とは逆極性にバイアスする）。 Incidentally, in the first embodiment, the function will be substantially the same even when the glass rod 11 or the transparent rod member is not provided. Further, the P-type semiconductor 6 and the N-type semiconductor 7 may be formed by replacing each other (in this case, the polarity is biased opposite to that described above).
第３図は第２実施例を示す。 FIG. 3 shows a second embodiment.
同図においては、光センサ２１は上記第１実施
例と同様に、Ｐ形半導体６と、該Ｐ形半導体６の
裏面及びその側周を覆うようにＮ形半導体７が接
合されて受光面が形成され、中央部には透孔９が
形成されている。 In the same figure, the optical sensor 21 has a light-receiving surface formed by joining a P-type semiconductor 6 and an N-type semiconductor 7 so as to cover the back surface and the side circumference of the P-type semiconductor 6, as in the first embodiment. A through hole 9 is formed in the center.
この実施例においては上記Ｎ形半導体７の裏面
及び透孔９の側壁にはそれぞれ遮光性の金属を蒸
着した金属膜２２，２３がコーテイングして取り
付けてあり、光源１２の光が直接Ｎ形半導体７を
経て受光面に届くのを遮ぎつたり、透孔９側壁を
経て受光面に漏れるのを遮ぎるようにしてある。
上記金属膜２２，２３と同様に遮光する物質、例
えば塗料を塗布しても良い。この実施例において
は第１図に示す場合と異り、透孔９側周面にはＮ
形半導体７層のみが露呈している。 In this embodiment, the back surface of the N-type semiconductor 7 and the side wall of the through hole 9 are coated with metal films 22 and 23, each of which has a vapor-deposited light-shielding metal, so that the light from the light source 12 is directly transmitted to the N-type semiconductor. It is designed to block the light from reaching the light-receiving surface through the hole 7 and to prevent it from leaking to the light-receiving surface through the side wall of the through-hole 9.
Similar to the metal films 22 and 23 described above, a light-shielding substance such as paint may be applied. In this embodiment, unlike the case shown in FIG.
Only seven semiconductor layers are exposed.
この第２実施例の動作は、上記第１実施例と略
同様である。 The operation of this second embodiment is substantially the same as that of the first embodiment.
第４図は第３実施例を示す。 FIG. 4 shows a third embodiment.
同図において、第３実施例側の光センサ３１
は、第１図に示す第１実施例における透孔９に薄
肉のパイプ１０を嵌装しないで、ガラス棒１１の
側部の表面に金属蒸着膜３２をコーテイングした
ガラス棒（符号３３で示す。）を嵌装して形成し
てある（但し図示においては透孔９側周面にはＮ
形半導体７層が露呈するようにしてある）。 In the figure, the optical sensor 31 on the third embodiment side
In this example, the thin pipe 10 is not fitted into the through hole 9 in the first embodiment shown in FIG. 1, but the glass rod 11 is coated with a metal vapor deposited film 32 on the side surface (indicated by reference numeral 33). ) (However, in the illustration, N is fitted on the side circumferential surface of the through hole 9.
7 layers of shaped semiconductors are exposed).
この場合においても上記金属蒸着膜３２によつ
て直接光源１２の光が受光面に漏れないようにさ
れている。 Even in this case, the metal vapor deposited film 32 prevents the light from the direct light source 12 from leaking to the light receiving surface.
尚、上記第３実施例において、金属蒸着膜３２
を設けないで、ガラス棒１１を屈折率の大きい物
質を用いて形成し、その側部表面側を屈折率の小
さいクラツド層を形成することにより、光源１２
からガラス棒１１を経て被写体２側に投光される
際、ガラス棒１１側壁を経て受光面側に漏れない
ようにすることもできる。 In addition, in the third embodiment, the metal vapor deposition film 32
By forming the glass rod 11 using a material with a high refractive index and forming a cladding layer with a low refractive index on the side surface side, the light source 12 is not provided.
When the light is projected onto the subject 2 side through the glass rod 11, it can also be prevented from leaking through the side wall of the glass rod 11 onto the light receiving surface side.
上記第３実施例の機能は第１実施例と同様であ
る。 The functions of the third embodiment are similar to those of the first embodiment.
尚、上述における各実施例において、受光面に
形成した透孔９を通り、被写体２側に投光される
際、パイプ１０、金属膜２３、金属蒸着膜３２、
クラツド層によつて、光源１２の光が直接受光面
側に漏れるのが防止されることになると共に、合
焦状態又はこれに充分近い状態で合焦とみなす必
要がある場合において、所定の結像面と共役な位
置４に収束された光がその位置４より後方に拡開
する場合、透孔９の側壁側から受光面に漏れるの
を防止する機能をも有するよう構成されている。 In each of the embodiments described above, when light is projected onto the subject 2 side through the through hole 9 formed on the light receiving surface, the pipe 10, the metal film 23, the metal vapor deposited film 32,
The cladding layer prevents the light from the light source 12 from directly leaking to the light-receiving surface side, and also maintains a predetermined focus when the in-focus state or a sufficiently close state is required to be considered in-focus. It is also configured to have a function of preventing light from leaking from the side wall side of the through hole 9 to the light receiving surface when the light converged at a position 4 that is conjugate with the image plane spreads backward from that position 4.
尚、上述における各実施例において、透孔９の
形状は円又は円状に限定されるものでなく、角形
その他の小孔とかスリツト状の開口部でも良い
し、該開口部を投光される光を通す透明部材で覆
つた透過窓でも良い。 In each of the above-mentioned embodiments, the shape of the through hole 9 is not limited to a circle or a circular shape, but may be a rectangular or other small hole or a slit-like opening, and the light is projected through the opening. It may also be a transparent window covered with a transparent member that allows light to pass through.
上記合焦検出に使用される光源１２はランプ、
LED等可視領域の光を用いても良いし、赤外領
域の光等を用いても良い。 The light source 12 used for the focus detection is a lamp,
Light in the visible region, such as an LED, may be used, or light in the infrared region, etc. may be used.
一方、被写体２が明るい場合において、光源１
２ら投光せず、周囲の外光によつて被写体２側か
ら入射される光によつて合焦か否かを検出する場
合においても、透孔９等の透過窓部の側部を遮光
部材で覆うようにしてあるので、合焦の時その光
が透過窓部の側部から受光面に漏れるのを防止し
て、暗電流を少くしてあるので本発明は投光する
場合はもとより、投光しない場合においても合焦
検出を精度よく行う際有効に機能することにな
る。 On the other hand, when the subject 2 is bright, the light source 1
Even when detecting whether or not focus is achieved using light incident from the subject 2 side using surrounding external light without projecting light from the 2nd side, the sides of the transparent window portion such as the transparent hole 9 can be shielded from light. Since it is covered with a material, when focusing, the light is prevented from leaking from the side of the transmitting window to the light receiving surface, and dark current is reduced, so the present invention is useful not only when projecting light. , even when no light is projected, it functions effectively in accurately performing focus detection.
尚、上述の各実施例における受光面は、PN接
合面によつて形成してあるが、PN接合面にさら
に半導体部を形成して増幅作用を有するフオトト
ランジスタ構造とすることもできるし、CdS，
CdSe等光によつて抵抗値が異なるものでも良い。 Although the light-receiving surface in each of the above-mentioned embodiments is formed of a PN junction surface, it is also possible to further form a semiconductor part on the PN junction surface to form a phototransistor structure having an amplification effect. ，
It may also be a material such as CdSe that has a resistance value that differs depending on the light.
以上述べたように本発明においては合焦検出の
ため透過窓を経て被写体側に投光される光が、透
過窓を通過する際、透過窓側壁から受光面側に漏
れないようにパイプ、金属膜、金属蒸着膜等の遮
光部材とか該遮光部材と同等の機能を有するクラ
ツド層等が形成してあるので、暗電流を少くする
ことができ、合焦検出を精度よく行い得ることが
できる。 As described above, in the present invention, when the light that is projected to the subject side through the transmission window for focus detection passes through the transmission window, it is necessary to use pipes, metal Since a light shielding member such as a film or a metal vapor deposited film or a cladding layer having the same function as the light shielding member is formed, dark current can be reduced and focus detection can be performed with high accuracy.
第１図及び第２図は本発明の第１実施例に係
り、第１図は第１実施例を示す説明図、第２図は
第１実施例におけるレンズ１の位置に対する出力
特性を示す特性図、第３図は第２実施例を示す説
明図、第４図は第３実施例を示す説明図である。
１……レンズ、２……被写体、３……光軸、
５，２１，３１……光センサ、６，７……半導
体、８……遮光板、９……透孔、１０……パイ
プ、１１，３３……ガラス棒、１２……光源、２
２，２３……金属膜、３２……金属蒸着膜。
1 and 2 relate to a first embodiment of the present invention, FIG. 1 is an explanatory diagram showing the first embodiment, and FIG. 2 is a characteristic showing output characteristics with respect to the position of the lens 1 in the first embodiment. 3 and 3 are explanatory diagrams showing the second embodiment, and FIG. 4 is an explanatory diagram showing the third embodiment. 1... Lens, 2... Subject, 3... Optical axis,
5, 21, 31... Optical sensor, 6, 7... Semiconductor, 8... Light shielding plate, 9... Through hole, 10... Pipe, 11, 33... Glass rod, 12... Light source, 2
2, 23...metal film, 32...metal vapor deposited film.
Claims (1)
光学像が所定の結像面に鮮明に結像されるか否か
を、受光面に設けた透過窓部の後方に配置した光
源からの光を前記透過窓部を通して被写体側に投
光し、前記被写体側から前記透過窓部を設けた受
光面に達する光量によつて検出する場合に用いら
れる光センサにおいて、暗電流を軽減するべく前
記透過窓部の側部に蔽光部材、又は透過窓部内に
嵌装される透明部材の側部表面側に蔽光手段を設
けたことを特徴とする光センサ。1. To check whether the optical image of the subject is clearly formed on a predetermined imaging plane by the photographic or imaging lens, it is determined whether the optical image of the subject is clearly formed on the predetermined imaging plane by measuring the light from the light source placed behind the transmission window provided on the light-receiving surface. In an optical sensor used for projecting light to a subject through the transmission window and detecting the amount of light reaching a light receiving surface from the subject side to a light-receiving surface provided with the transmission window, the An optical sensor characterized in that a light shielding member is provided on the side of the transmission window, or a light shielding means is provided on the side surface of the transparent member fitted in the transmission window.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4608482A JPS58162832A (en) | 1982-03-23 | 1982-03-23 | Photosensor |
| US06/475,292 US4556787A (en) | 1982-03-23 | 1983-03-14 | Photosensor for optical observing or photographing devices |
| EP83301507A EP0089822B1 (en) | 1982-03-23 | 1983-03-18 | Focus state detecting device |
| DE8383301507T DE3361379D1 (en) | 1982-03-23 | 1983-03-18 | Focus state detecting device |
| AT83301507T ATE16858T1 (en) | 1982-03-23 | 1983-03-18 | FOCUS DEVICE. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4608482A JPS58162832A (en) | 1982-03-23 | 1982-03-23 | Photosensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58162832A JPS58162832A (en) | 1983-09-27 |
| JPH057687B2 true JPH057687B2 (en) | 1993-01-29 |
Family
ID=12737116
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4608482A Granted JPS58162832A (en) | 1982-03-23 | 1982-03-23 | Photosensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58162832A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0782839A (en) * | 1993-07-17 | 1995-03-28 | Takubo Kogyosho:Kk | Pipe pillar |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50147342A (en) * | 1974-05-15 | 1975-11-26 | ||
| JPS5286345A (en) * | 1976-01-13 | 1977-07-18 | Yamakawa Denshi Kk | Projector and light receiver |
| JPS5298545A (en) * | 1976-02-10 | 1977-08-18 | Monsanto Co | Organic vapor detector and method of detecting same vapor |
| JPS542104A (en) * | 1977-06-07 | 1979-01-09 | Matsushita Electric Ind Co Ltd | Face run-out detector of rotating bodies |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS472144U (en) * | 1971-01-23 | 1972-08-24 |
-
1982
- 1982-03-23 JP JP4608482A patent/JPS58162832A/en active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50147342A (en) * | 1974-05-15 | 1975-11-26 | ||
| JPS5286345A (en) * | 1976-01-13 | 1977-07-18 | Yamakawa Denshi Kk | Projector and light receiver |
| JPS5298545A (en) * | 1976-02-10 | 1977-08-18 | Monsanto Co | Organic vapor detector and method of detecting same vapor |
| JPS542104A (en) * | 1977-06-07 | 1979-01-09 | Matsushita Electric Ind Co Ltd | Face run-out detector of rotating bodies |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58162832A (en) | 1983-09-27 |
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