JPH0574133A - Memory card - Google Patents

Memory card

Info

Publication number
JPH0574133A
JPH0574133A JP3233389A JP23338991A JPH0574133A JP H0574133 A JPH0574133 A JP H0574133A JP 3233389 A JP3233389 A JP 3233389A JP 23338991 A JP23338991 A JP 23338991A JP H0574133 A JPH0574133 A JP H0574133A
Authority
JP
Japan
Prior art keywords
power source
memory card
control signal
power supply
signal line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3233389A
Other languages
Japanese (ja)
Inventor
Masaaki Harada
正明 原田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP3233389A priority Critical patent/JPH0574133A/en
Publication of JPH0574133A publication Critical patent/JPH0574133A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To prevent occurrence of a false operation of RAM inside a memory card by selecting a high-potential power source to be connected to a control signal line of the memory card through a pull-up resistor, from a plurality of power source systems inside the memory card of which power source lines can be connected and interrupted, and also to reduce consumption of current by connection and interruption of the power source lines. CONSTITUTION:A power source switching element 102 switches an external source voltage 100 and a battery voltage 101. An internal power source 103 is impressed on an element 106 controlling RAM and on the RAM 107. A card control signal line 104 of a memory card is connected, through a pull-up resistor 105, to a high potential power source switching element 108 which switches the external power source 100 and the internal power source 103. Besides, a three-state buffer 109 is connected to a route of input to the high potential power source switching element 108 from the internal power source 103, and a control signal is sent to a control signal line so as to connect and interrupt the power source line of the internal power source 103.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、メモリーカードにおけ
る制御信号線をプルアップ抵抗を介して高電位電源と接
続する方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for connecting a control signal line in a memory card to a high potential power source via a pull-up resistor.

【0002】[0002]

【従来の技術】従来の少なくとも、RAMと電池と、電
源切り換え素子と、RAMを制御する素子と、メモリー
カードの制御信号線を高電位電源と接続するプルアップ
抵抗により構成されるメモリーカードのブロック図は図
2である。
2. Description of the Related Art A block of a memory card which is composed of at least a RAM, a battery, a power source switching element, an element for controlling the RAM, and a pull-up resistor for connecting a control signal line of the memory card to a high potential power source. The figure is FIG.

【0003】従来のメモリーカードにおいては、図2に
示すようにメモリーカードの制御信号線204(以下、
カード制御信号線204と略す。)が、メモリーカード
外部から供給される電源200(以下、外部電源200
と略す。)にプルアップ抵抗205を介して接続されて
いた。
In a conventional memory card, as shown in FIG. 2, a control signal line 204 of the memory card (hereinafter,
It is abbreviated as the card control signal line 204. ) Is a power supply 200 supplied from outside the memory card (hereinafter, the external power supply 200
Abbreviated. ) Is connected via a pull-up resistor 205.

【0004】これにより、従来のメモリーカードのカー
ド制御信号線204の電圧は、メモリーカード外部から
制御信号が直接入力されていない時、外部電源200の
電圧と同じ電圧になる。
As a result, the voltage of the card control signal line 204 of the conventional memory card becomes the same voltage as the voltage of the external power supply 200 when the control signal is not directly input from the outside of the memory card.

【0005】[0005]

【発明が解決しようとする課題】しかし、前述の従来技
術ではカード制御信号線204にメモリーカード外部か
ら信号が入力されていない場合、カード制御信号線20
4には外部電源200と同電圧が与えられるので、外部
電源200の変動に対してカード制御信号線204の電
圧が追従してしまう。
However, in the above-mentioned conventional technique, when no signal is input to the card control signal line 204 from the outside of the memory card, the card control signal line 20 is used.
Since the same voltage as that of the external power supply 200 is applied to 4, the voltage of the card control signal line 204 follows the fluctuation of the external power supply 200.

【0006】このため、メモリーカード内部のRAMが
誤動作を起こしデータが書き変わってしまうという問題
があった。
Therefore, there is a problem that the RAM in the memory card malfunctions and the data is rewritten.

【0007】そこで本発明は、このような問題点を解決
するためになされるもので、メモリーカードの制御信号
線をプルアップ抵抗を介して高電位電源に接続する場
合、接続する高電位電源の影響を受けて、メモリーカー
ド内部のRAMが誤動作を起こすのを防止するための制
御信号線と高電位電源の接続方法を提供することを目的
とする。
Therefore, the present invention is made to solve such a problem, and when the control signal line of the memory card is connected to the high potential power source through the pull-up resistor, the high potential power source to be connected is It is an object of the present invention to provide a method for connecting a control signal line and a high-potential power supply for preventing a RAM inside a memory card from malfunctioning under the influence of the influence.

【0008】[0008]

【課題を解決するための手段】本発明のメモリーカード
はカードの制御信号線にプルアップ抵抗を介して接続す
る高電位電源を、電源線の接続・遮断が可能な複数の電
源系から選択できることを特徴とする。
In the memory card of the present invention, the high-potential power supply connected to the control signal line of the card through the pull-up resistor can be selected from a plurality of power supply systems capable of connecting / disconnecting the power supply line. Is characterized by.

【0009】[0009]

【実施例】以下、本発明について、実施例に基づき詳細
に説明する。
EXAMPLES The present invention will be described in detail below based on examples.

【0010】図1は、本発明の実施例を示すメモリーカ
ードのブロック図である。
FIG. 1 is a block diagram of a memory card showing an embodiment of the present invention.

【0011】図1において、メモリーカード外部から供
給される電源100(以下、外部電源100と略す。)
と電池101は、外部電源100と電池電圧を切り換え
る素子102(以下、電源切り換え素子102と略
す。)に入力される。
In FIG. 1, a power source 100 supplied from outside the memory card (hereinafter, abbreviated as an external power source 100).
The battery 101 is input to an external power supply 100 and an element 102 for switching the battery voltage (hereinafter, abbreviated as the power supply switching element 102).

【0012】電源切り換え素子102の出力(以下、内
部電源103と称す。)は、RAMを制御する素子10
6とRAM107の電源である。
The output of the power supply switching element 102 (hereinafter referred to as the internal power supply 103) is the element 10 for controlling the RAM.
6 and RAM 107.

【0013】電源切り換え素子102は、外部電源10
0が印可されているときには外部電源電圧を内部電源1
03として、外部電源100が印可されていないときに
は電池電圧を内部電源103とする。
The power source switching element 102 is an external power source 10.
When 0 is applied, the external power supply voltage is set to the internal power supply 1
When the external power supply 100 is not applied, the battery voltage is set to the internal power supply 103.

【0014】メモリーカードの制御信号線104(以
下、カード制御信号線104と略す。)は、プルアップ
抵抗105を介して外部電源100と内部電源103を
切り換える素子108(以下、高電位電源切り換え素子
108と称す。)に接続されている。
A control signal line 104 of the memory card (hereinafter abbreviated as a card control signal line 104) is an element 108 (hereinafter, a high-potential power source switching element) that switches between the external power source 100 and the internal power source 103 via a pull-up resistor 105. 108).

【0015】高電位電源切り換え素子108は外部電源
100が印可されているときには、外部電源電圧をプル
アップ抵抗を介してカード制御信号線104に与え、外
部電源100が印可されていないときには、内部電源1
03の電圧をプルアップ抵抗を介してカード制御信号線
104に与える。
The high-potential power supply switching element 108 supplies the external power supply voltage to the card control signal line 104 through the pull-up resistor when the external power supply 100 is applied, and when the external power supply 100 is not applied, the internal power supply is provided. 1
The voltage 03 is applied to the card control signal line 104 via a pull-up resistor.

【0016】従って、外部電源100が印可されている
場合の制御信号104の電圧は、外部電源電圧となり、
外部電源100が印可されていない場合の制御信号10
4の電圧は、内部電源電圧となる。
Therefore, when the external power supply 100 is applied, the voltage of the control signal 104 becomes the external power supply voltage,
Control signal 10 when the external power supply 100 is not applied
The voltage of 4 becomes the internal power supply voltage.

【0017】また、内部電源103から高電位電源切り
換え素子108へ入力する経路において、3ステートバ
ッファ109を接続し、3ステートバッファ109の制
御信号線110に制御信号を送ることにより、内部電源
103の電源線を接続・遮断することができる。
Further, by connecting the 3-state buffer 109 in the path for inputting from the internal power source 103 to the high potential power source switching element 108 and sending a control signal to the control signal line 110 of the 3-state buffer 109, the internal power source 103 Power line can be connected or disconnected.

【0018】以上により、メモリーカードのカード制御
信号104に、メモリーカード外部から信号が直接入力
されていない場合、カード制御信号104の電圧は外部
電源、あるいは内部電源の複数の電源系から選択できる
ため、外部電源の変動に対してカード制御信号104の
電圧が追従するのを減少させ、メモリーカード内部のR
AMが誤動作を起こすのを防止することができる。
As described above, when the signal is not directly input to the card control signal 104 of the memory card from the outside of the memory card, the voltage of the card control signal 104 can be selected from the external power supply or a plurality of internal power supply systems. , The voltage of the card control signal 104 following the fluctuation of the external power supply is reduced, and the R
It is possible to prevent the AM from malfunctioning.

【0019】更に、上記のように複数の電源系を用いて
も、内部電源103の電源線を接続・遮断することがで
きるため、必要がない場合には電源線を遮断して消費電
流の減少を図ることができる。
Further, even if a plurality of power supply systems are used as described above, the power supply line of the internal power supply 103 can be connected and disconnected, so that the power supply line is cut off when it is not necessary to reduce current consumption. Can be planned.

【0020】尚、ここに挙げた実施例はあくまでも一実
施例にすぎない。
The embodiment described here is merely one embodiment.

【0021】[0021]

【発明の効果】以上述べたように、本発明のメモリーカ
ードは、メモリーカードの制御信号線にプルアップ抵抗
を介して接続する高電位電源を、電源線の接続・遮断が
可能なメモリーカード内部の複数の電源系から選択する
ことができるので、外部電源の変動に対する制御信号の
追従を減少することにより、メモリーカード内部のRA
Mが誤動作を起こすのを防止する効果がある。
As described above, in the memory card of the present invention, the high potential power source connected to the control signal line of the memory card through the pull-up resistor can be connected to or disconnected from the power source line. Since it is possible to select from multiple power supply systems, it is possible to reduce the RA of the memory card by reducing the tracking of the control signal to the fluctuation of the external power supply.
It is effective in preventing M from malfunctioning.

【0022】また、電源線の接続・遮断が可能なので、
消費電流の減少を図る効果がある。
Further, since the power line can be connected / cut off,
This has the effect of reducing the current consumption.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明のメモリーカードの内部回路構成の実施
例を示すブロック図。
FIG. 1 is a block diagram showing an embodiment of an internal circuit configuration of a memory card of the present invention.

【図2】従来のメモリーカードの内部回路構成を示すブ
ロック図。
FIG. 2 is a block diagram showing an internal circuit configuration of a conventional memory card.

【符号の説明】 100 メモリーカード外部から供給される電源 101 電池 102 外部電源と電池電圧を切り換える素子 103 内部電源 104 メモリーカードの制御信号線 105 プルアップ抵抗 106 RAMを制御する素子 107 RAM 108 外部電源と内部電源を切り換える素子 109 3ステートバッファ 110 3ステートバッファの制御信号線 200 メモリーカード外部から供給される電源 201 電池 202 外部電源と電池電圧を切り換える素子 203 内部電源 204 メモリーカードの制御信号線 205 プルアップ抵抗 206 RAMを制御する素子 207 RAM[Explanation of reference numerals] 100 power source supplied from outside the memory card 101 battery 102 element for switching between external power source and battery voltage 103 internal power source 104 control signal line of memory card 105 pull-up resistor 106 element for controlling RAM 107 RAM 108 external power source And an element for switching the internal power source 109 3-state buffer 110 Control signal line for 3-state buffer 200 Power source externally supplied from the memory card 201 Battery 202 Element for switching between external power source and battery voltage 203 Internal power source 204 Control signal line for memory card 205 Pull Up resistor 206 Element for controlling RAM 207 RAM

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 少なくとも、RAMと電池と、メモリー
カード外部から供給される電源と電池電圧を切り換える
素子(以下、電源切り換え素子と略す。)と、RAMを
制御する素子と、メモリーカードの制御信号線を高電位
電源と接続するプルアップ抵抗により構成されるメモリ
ーカードにおいて、前記プルアップ抵抗を接続する高電
位電源を、電源線の接続・遮断が可能なメモリーカード
内部の複数の電源系から選択できることを特徴とするメ
モリーカード。
1. A RAM, a battery, an element for switching between a battery voltage and a power source supplied from outside the memory card (hereinafter referred to as a power source switching element), an element for controlling the RAM, and a control signal for the memory card. In a memory card composed of a pull-up resistor that connects a wire to a high-potential power supply, select the high-potential power supply that connects the pull-up resistor from multiple power supply systems inside the memory card that can connect and disconnect the power supply line. A memory card that can be used.
JP3233389A 1991-09-12 1991-09-12 Memory card Pending JPH0574133A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3233389A JPH0574133A (en) 1991-09-12 1991-09-12 Memory card

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3233389A JPH0574133A (en) 1991-09-12 1991-09-12 Memory card

Publications (1)

Publication Number Publication Date
JPH0574133A true JPH0574133A (en) 1993-03-26

Family

ID=16954329

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3233389A Pending JPH0574133A (en) 1991-09-12 1991-09-12 Memory card

Country Status (1)

Country Link
JP (1) JPH0574133A (en)

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